TWI282141B - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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Publication number
TWI282141B
TWI282141B TW094112882A TW94112882A TWI282141B TW I282141 B TWI282141 B TW I282141B TW 094112882 A TW094112882 A TW 094112882A TW 94112882 A TW94112882 A TW 94112882A TW I282141 B TWI282141 B TW I282141B
Authority
TW
Taiwan
Prior art keywords
insulating film
film
element isolation
oxide film
isolation insulating
Prior art date
Application number
TW094112882A
Other languages
English (en)
Chinese (zh)
Other versions
TW200605264A (en
Inventor
Norio Ishitsuka
Jun Tanaka
Tomio Iwasaki
Hiroyuki Ota
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200605264A publication Critical patent/TW200605264A/zh
Application granted granted Critical
Publication of TWI282141B publication Critical patent/TWI282141B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02134—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02137—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising alkyl silsesquioxane, e.g. MSQ
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW094112882A 2004-05-25 2005-04-22 Semiconductor device and manufacturing method thereof TWI282141B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004154226A JP2005340327A (ja) 2004-05-25 2004-05-25 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200605264A TW200605264A (en) 2006-02-01
TWI282141B true TWI282141B (en) 2007-06-01

Family

ID=35446761

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094112882A TWI282141B (en) 2004-05-25 2005-04-22 Semiconductor device and manufacturing method thereof

Country Status (5)

Country Link
US (1) US7279769B2 (enExample)
JP (1) JP2005340327A (enExample)
KR (1) KR100732647B1 (enExample)
CN (1) CN100461414C (enExample)
TW (1) TWI282141B (enExample)

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JP5195747B2 (ja) * 2007-03-27 2013-05-15 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5525695B2 (ja) * 2007-06-20 2014-06-18 株式会社東芝 半導体装置およびその製造方法
US20110316117A1 (en) * 2007-08-14 2011-12-29 Agency For Science, Technology And Research Die package and a method for manufacturing the die package
US7871895B2 (en) * 2008-02-19 2011-01-18 International Business Machines Corporation Method and structure for relieving transistor performance degradation due to shallow trench isolation induced stress
JPWO2010073947A1 (ja) * 2008-12-25 2012-06-14 国立大学法人東北大学 半導体装置及びその製造方法
JPWO2011138906A1 (ja) * 2010-05-07 2013-07-22 国立大学法人東北大学 半導体装置の製造方法
JP2012009791A (ja) * 2010-06-28 2012-01-12 Panasonic Corp 固体撮像装置及びその製造方法
JP5405437B2 (ja) * 2010-11-05 2014-02-05 ＡｚエレクトロニックマテリアルズＩｐ株式会社 アイソレーション構造の形成方法
JP2012134302A (ja) * 2010-12-21 2012-07-12 Jsr Corp トレンチ埋め込み方法、及びトレンチ埋め込み用組成物
JP2013074169A (ja) * 2011-09-28 2013-04-22 Kyocera Corp 薄膜配線基板
KR102102815B1 (ko) 2013-09-26 2020-04-22 인텔 코포레이션 Ｎｍｏｓ 구조체들에서 전위가 높아진 변형을 형성하는 방법
US10204982B2 (en) * 2013-10-08 2019-02-12 Stmicroelectronics, Inc. Semiconductor device with relaxation reduction liner and associated methods
FR3024587B1 (fr) * 2014-08-01 2018-01-26 Soitec Procede de fabrication d'une structure hautement resistive
US10822692B2 (en) 2016-08-12 2020-11-03 University Of North Texas Binary Ag—Cu amorphous thin-films for electronic applications
KR102549340B1 (ko) * 2016-09-27 2023-06-28 삼성전자주식회사 반도체 장치 및 이의 제조 방법
CN110880473B (zh) * 2018-09-06 2025-02-25 长鑫存储技术有限公司 半导体器件、半导体器件制造方法

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Also Published As

Publication number Publication date
JP2005340327A (ja) 2005-12-08
US20050269662A1 (en) 2005-12-08
CN100461414C (zh) 2009-02-11
KR20060048071A (ko) 2006-05-18
TW200605264A (en) 2006-02-01
KR100732647B1 (ko) 2007-06-27
US7279769B2 (en) 2007-10-09
CN1716607A (zh) 2006-01-04

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