TWI276270B - A high repetition rate laser produced plasma EUV light source - Google Patents

A high repetition rate laser produced plasma EUV light source Download PDF

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Publication number
TWI276270B
TWI276270B TW094105596A TW94105596A TWI276270B TW I276270 B TWI276270 B TW I276270B TW 094105596 A TW094105596 A TW 094105596A TW 94105596 A TW94105596 A TW 94105596A TW I276270 B TWI276270 B TW I276270B
Authority
TW
Taiwan
Prior art keywords
target
light source
euv light
plasma
laser
Prior art date
Application number
TW094105596A
Other languages
English (en)
Chinese (zh)
Other versions
TW200536217A (en
Inventor
Robert P Akins
Richard L Sandstrom
William N Partlo
Igor V Fomenkov
Thomas D Steiger
Original Assignee
Cymer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cymer Inc filed Critical Cymer Inc
Publication of TW200536217A publication Critical patent/TW200536217A/zh
Application granted granted Critical
Publication of TWI276270B publication Critical patent/TWI276270B/zh

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/20—Selection of substances for gas fillings; Means for obtaining or maintaining the desired pressure within the tube, e.g. by gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
    • H01J65/04—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H05G2/0027—Arrangements for controlling the supply; Arrangements for measurements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0084—Control of the laser beam

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lasers (AREA)
TW094105596A 2004-03-17 2005-02-24 A high repetition rate laser produced plasma EUV light source TWI276270B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/803,526 US7087914B2 (en) 2004-03-17 2004-03-17 High repetition rate laser produced plasma EUV light source

Publications (2)

Publication Number Publication Date
TW200536217A TW200536217A (en) 2005-11-01
TWI276270B true TWI276270B (en) 2007-03-11

Family

ID=34985273

Family Applications (2)

Application Number Title Priority Date Filing Date
TW094105596A TWI276270B (en) 2004-03-17 2005-02-24 A high repetition rate laser produced plasma EUV light source
TW094105808A TWI305477B (en) 2004-03-17 2005-02-25 Lpp euv light source

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW094105808A TWI305477B (en) 2004-03-17 2005-02-25 Lpp euv light source

Country Status (6)

Country Link
US (4) US7087914B2 (enExample)
EP (1) EP1726028B1 (enExample)
JP (1) JP5139055B2 (enExample)
KR (1) KR101118995B1 (enExample)
TW (2) TWI276270B (enExample)
WO (1) WO2005089130A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8319201B2 (en) 2007-07-13 2012-11-27 Cymer, Inc. Laser produced plasma EUV light source having a droplet stream produced using a modulated disturbance wave
TWI481315B (zh) * 2009-04-09 2015-04-11 Asml Netherlands Bv 用於具有熱壁及冷收集器鏡之雷射生成電漿極紫外線腔室的系統、方法與裝置

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* Cited by examiner, † Cited by third party
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