JP5139055B2 - 高繰返し数レーザを生成するプラズマeuv光源 - Google Patents
高繰返し数レーザを生成するプラズマeuv光源 Download PDFInfo
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Description
関連出願
本出願は、開示内容が引用により本明細書に組み込まれている、代理人整理番号第2003−0083−01号である2004年3月10日出願の「EUV光源のための集光器」という名称の現在特許出願中の出願に関連する2004年3月17日出願の「高繰返し数レーザ生成プラズマEUV光源」という名称の米国特許出願出願番号第10/803,526号に対する優先権を主張するものである。
このようなEUV光源の全体的効率に決定的に重要な1つの分野は、集光器である。例えば、時間と共にデブリ堆積を制御することができないためにデブリが集光器の頻繁な交換を必要とする場合、中間焦点に所要光エネルギを送出する機能を妨げかつ光源の経済効率も下げる可能性がある、デブリ管理を含む集光器効率に関する多くの問題に対処すべきである。集光器システムに関する提案に対しては、代理人整理番号第2003−0083−01号である2004年3月10日出願の「EUV光源のための集光器」という名称の現在特許出願中の出願に説明されており、その開示内容は、引用により本明細書に組み込まれている。
例えば、開示内容が引用により本明細書に組み込まれている、H.Pant著「磁場における膨張レーザ生成プラズマの挙動」、Physica Scripta、T75巻(1998年)、104から111頁、Tillmack著「LPPの磁気封じ込み」、UCSD報告書、及びAbramova著「トルネードトラップ」に説明されているように、膨張レーザ生成プラズマの挙動及び/又はプラズマに与える磁場の影響は、モデル化されて研究されている。
ターゲット送出制御システム90は、システムコントローラ60からの信号に応答して、ターゲット送出機構92によって放出されたターゲット液滴94の放出点を例えば修正して望ましい点火サイト28に到着するターゲット液滴内の誤差を矯正することができる。
また、中間焦点40に又はその近くにあるEUV光源検出器100は、例えば、有効かつ効率的なLPPのEUV光生成に対する適正な場所及び時間にターゲット液滴を適正に割り込ませるために、レーザパルスのタイミング及び焦点などの事柄の誤差を示すことができるシステムコントローラ60にフィードバックを提供することができる。
空間誤差信号は、レーザビーム位置及び方向制御システム66に供給することができ、レーザビーム位置及び方向制御システム66は、例えば、発射点信号及び照準線信号をレーザビーム位置決め器に供給することができ、レーザビーム位置決め器は、例えば、発射時のレーザシステム増幅器48の出力部の位置とレーザ出力ビームの照準方向のいずれか又は両方を変更することによってレーザを位置決めすることができる。
図2Aに示すように、楕円集光ミラー150は、ミラーを見ると断面が円形であり、これは、ターゲット液滴94が焦点28にあるように設計された開始点に到達するのを妨げないように、殆ど楕円ミラー150の焦点28寄りになっているように図1Aに示されているミラーの最も大きい拡張部での横断面とすることができる。しかし、ターゲット液滴の焦点までの通過を可能にするために適切な穴をミラー(図示せず)に付加すると、ミラーは、中間焦点のために更に延びることができることを理解すべきである。また、楕円ミラーは、例えば、集束光学器械156を通じて、ミラー150を通って楕円ミラーの焦点にあることが望ましい点火サイト28に集束されるLPPレーザビームの進入を可能にするために、例えば、図2Aでは円形であると示めされる開口512を有することができる。また、開口152は、例えば、使用される制御システム種類によっては、開始点上でレーザビーム154の焦点の補正を行うようにビーム光路を修正するという要件(もしあれば)内でビームプロフィールに合わせて例えばほぼ矩形に作ることができる。
例えばその下端での空洞206は、ノズル220内に開くことができ、ノズル220は、例えば固体ターゲット小球原料の代替的な実施形態ではノズル220の終端でのノズル開口部226の前で本質的に1つのターゲット小球のサイズまで狭窄化し、液体ターゲット材料を用いる実施形態の場合では、例えばターゲット液滴94に分離する役目をすることができる直径が約例えば20μmの流れ220を本質的に構成するサイズまで狭窄化する役目をすることができる狭窄化部分222を有することができる。
また、検出器262が例えば垂直方向に(図示のように)配向されたフォトダイオードの別の線形アレイを含む場合、アレイからの強度信号の何らかの分布を利用すると、例えば図4Aにおいて位置94a及び94aに例示するように、例えば点火サイトからの強度信号の横方向の変位を判断することができることも理解されるであろう。
撮像装置及び検出器256、256a、及び256b、及び262、262a、及び262bの1つに例えば細長い円筒形レンズを設置すると、例えば図4aに示すように、例えば平面検出器面を点火サイトの面の上方に形成して、この平面を通る液滴94の通過を検出することができる。このような場合、図5に概略的に示すシステムを使用すると、図4A及び図4Bに関して説明したターゲット追跡システムの一部又は全ての態様を補うか又はその代用とすることができる。
このような機器を用いて、例えばアレイ270からのほぼ円形のピクセルグループによってかつ適切な画像処理ソフトウエアを用いて形成された例えば液滴94の画像を形成し、アレイにわたって液滴の「斑点」画像を追跡することができる。画像処理及び対象追跡の技術分野に携わる当業者は、3つの交差視野、例えば270a、272b、及び274aの全体にわたるこのような追跡では、点火サイト28に到達する前に液滴94の追跡を行うと共に、ターゲット液滴の実際の位置とターゲット点火サイト28の間の位置誤差を示す例えばフィードバックコントローラ62が誤差信号を生成することができる元になる情報を得ることができ、その情報は、特定の液滴に対してはその特定のターゲット液滴94のレーザビーム154の照準点に基づくものとすることができ、その特定のターゲット液滴94は、本出願で説明するように、例えばフィードバック制御、例えばレーザ集準システム68のために何らかの予め選択された望ましい点火サイト、例えば集光器焦点にある場合もない場合もあることを理解するであろう。
全2πステラジアンの多層集光器を用いて、幾何学的集光面積を5ステラジアンから2πステラジアンに大きくするために、レーザを生成してプラズマを作り出すためのレーザへの所要の入力電力を25%低減することができる。例えば、2.0%のレーザ/EUV光変換率(例えば、短い波長による二重効果を基本とする)、4%の電気/レーザ変換率、2πステラジアンの集光、及びTRW/CEOシステムと同じEUV透過率を仮定したKrFエキシマベースのLLP光源の場合、得られる電力は、227,272Wであり、これは、放電生成プラズマ(DPP)を用いた代替手法と遜色のないものである。例えば、(2.0%/1.0%)・(4.0%/3.0%)・(2πstr/5πstr)=3.3でこのような改善になり、例えば、現在公開されているTRW/CEOのLPPの結果で示されている値に優るものである。
以上からCE及び帯域内CEがそれほど重要である理由が明らかである。
ターゲット送出はまた、代理人整理番号第2002−0030−01号である2003年4月8日出願の「極紫外線光源」という名称の現在特許出願中の米国特許出願出願番号第10/409,254号に開示されているもののような技術を利用して達成することができ、その開示内容は、引用により本明細書に組み込まれている。
当業者は、本発明の実施形態の上述の態様に多くの修正及び変更を行うことができ、特許請求の範囲は、開示した実施形態だけに限定されるものではなく、このような実施形態及びその均等物を含むように解釈すべきであることを認めるであろう。
22 パルスレーザシステム
24 ターゲット送出システム
26 チャンバ
28 照射サイト
Claims (10)
- 容器と、
レーザビームで照射サイトを照射したソース材料からプラズマを生成するEUV生成プラズマ発生器と、
生成EUV光を前記容器の一端で中間焦点に集束させる集光器であって、前記集光器と前記中間焦点との間にEUV光の円錐部を画定する前記集光器と、
前記容器内で、前記EUV光の円錐部の外側に配置された、複数の湾曲板であって、該複数の湾曲板の各々は、前記照射サイトと前記中間焦点との間の軸に対して平行でない角度で配置されている、前記複数の湾曲板と、
前記湾曲板を冷却して、前記容器内のソース材料原子を前記湾曲板の上に堆積させるようにする熱交換器システムと、
を含むことを特徴とするEUV光源。 - 更に、前記容器を第1の圧力を有する第1の区域と第2の圧力を有する第2の区域とに分離する圧力トラップを含む、
ことを特徴とする請求項1に記載のEUV光源。 - 更に、前記EUV生成プラズマ発生器は、前記レーザビームによる照射のための前記照射サイトに個別のターゲットを送出するターゲット送出機構を含む、
ことを特徴とする請求項2に記載のEUV光源。 - 更に、前記照射サイトは、前記第1の区域内にあり、前記第1の圧力は前記第2の圧力よりも大きい、
ことを特徴とする請求項3に記載のEUV光源。 - 更に、前記複数の湾曲板は、前記第1の区域内にある、
ことを特徴とする請求項4に記載のEUV光源。 - 更に、前記第2の圧力を維持するための真空ポンプを含む、
ことを特徴とする請求項4に記載のEUV光源。 - 更に、前記EUV生成プラズマ発生器は、前記レーザビームによる照射のための前記照射サイトに液滴を送出するターゲット送出機構を含む、
ことを特徴とする請求項1に記載のEUV光源。 - 更に、前記集光器は楕円ミラーである、
ことを特徴とする請求項1に記載のEUV光源。 - 更に、前記集光器は、レーザビームによる照射のための照射サイトに焦点を有する、
ことを特徴とする請求項1に記載のEUV光源。 - 更に、前記湾曲板の各々は、該湾曲板を冷却するためのマイクロチャネルとともに形成されている、
ことを特徴とする請求項1に記載のEUV光源。
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US10/803,526 US7087914B2 (en) | 2004-03-17 | 2004-03-17 | High repetition rate laser produced plasma EUV light source |
US10/803,526 | 2004-03-17 | ||
PCT/US2005/007056 WO2005089130A2 (en) | 2004-03-17 | 2005-03-03 | A high repetition rate laser produced plasma euv light source |
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JP2007529869A5 JP2007529869A5 (ja) | 2008-04-17 |
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US (4) | US7087914B2 (ja) |
EP (1) | EP1726028B1 (ja) |
JP (1) | JP5139055B2 (ja) |
KR (1) | KR101118995B1 (ja) |
TW (2) | TWI276270B (ja) |
WO (1) | WO2005089130A2 (ja) |
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JP2007529869A (ja) | 2007-10-25 |
WO2005089130A3 (en) | 2006-02-09 |
TWI276270B (en) | 2007-03-11 |
US20070029511A1 (en) | 2007-02-08 |
TW200536217A (en) | 2005-11-01 |
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