|
KR100611404B1
(ko)
*
|
2004-07-27 |
2006-08-11 |
주식회사 하이닉스반도체 |
메인 증폭기 및 반도체 장치
|
|
US7209405B2
(en)
*
|
2005-02-23 |
2007-04-24 |
Micron Technology, Inc. |
Memory device and method having multiple internal data buses and memory bank interleaving
|
|
KR100670707B1
(ko)
|
2005-03-31 |
2007-01-17 |
주식회사 하이닉스반도체 |
멀티-포트 메모리 소자
|
|
US8429319B2
(en)
|
2005-09-28 |
2013-04-23 |
Hynix Semiconductor Inc. |
Multi-port memory device with serial input/output interface
|
|
KR100815176B1
(ko)
*
|
2005-09-28 |
2008-03-19 |
주식회사 하이닉스반도체 |
멀티포트 메모리 장치
|
|
DE102006045248A1
(de)
*
|
2005-09-29 |
2007-04-19 |
Hynix Semiconductor Inc., Ichon |
Multiport-Speichervorrichtung mit serieller Eingabe-/Ausgabeschnittstelle
|
|
KR100721581B1
(ko)
|
2005-09-29 |
2007-05-23 |
주식회사 하이닉스반도체 |
직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자
|
|
EP1932158A4
(en)
|
2005-09-30 |
2008-10-15 |
Mosaid Technologies Inc |
MEMORY WITH OUTPUT CONTROL
|
|
US7652922B2
(en)
*
|
2005-09-30 |
2010-01-26 |
Mosaid Technologies Incorporated |
Multiple independent serial link memory
|
|
US11948629B2
(en)
|
2005-09-30 |
2024-04-02 |
Mosaid Technologies Incorporated |
Non-volatile memory device with concurrent bank operations
|
|
KR100735612B1
(ko)
*
|
2005-12-22 |
2007-07-04 |
삼성전자주식회사 |
멀티패쓰 억세스블 반도체 메모리 장치
|
|
US20070150667A1
(en)
*
|
2005-12-23 |
2007-06-28 |
Intel Corporation |
Multiported memory with ports mapped to bank sets
|
|
JP2007200512A
(ja)
*
|
2006-01-30 |
2007-08-09 |
Renesas Technology Corp |
半導体記憶装置
|
|
KR100695436B1
(ko)
*
|
2006-04-13 |
2007-03-16 |
주식회사 하이닉스반도체 |
직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자 및그의 동작 모드 제어방법
|
|
KR100781129B1
(ko)
*
|
2006-06-05 |
2007-11-30 |
엠텍비젼 주식회사 |
다중 포트 메모리 장치 및 그 데이터의 출력 방법
|
|
KR100790446B1
(ko)
|
2006-06-30 |
2008-01-02 |
주식회사 하이닉스반도체 |
스택뱅크 구조를 갖는 반도체 메모리 장치
|
|
KR100846386B1
(ko)
*
|
2006-09-21 |
2008-07-15 |
주식회사 하이닉스반도체 |
멀티포트 메모리 장치
|
|
KR100837811B1
(ko)
|
2006-11-15 |
2008-06-13 |
주식회사 하이닉스반도체 |
데이터 변환 회로 및 이를 이용한 반도체 메모리 장치
|
|
KR100871083B1
(ko)
*
|
2007-02-27 |
2008-11-28 |
삼성전자주식회사 |
입출력 센스앰프를 구비하는 반도체 메모리 장치의레이아웃 구조
|
|
US7817491B2
(en)
|
2007-09-28 |
2010-10-19 |
Hynix Semiconductor Inc. |
Bank control device and semiconductor device including the same
|
|
US9123395B2
(en)
*
|
2007-11-09 |
2015-09-01 |
SK Hynix Inc. |
Stack bank type semiconductor memory apparatus capable of improving alignment margin
|
|
US8181003B2
(en)
*
|
2008-05-29 |
2012-05-15 |
Axis Semiconductor, Inc. |
Instruction set design, control and communication in programmable microprocessor cores and the like
|
|
JP2011146094A
(ja)
*
|
2010-01-14 |
2011-07-28 |
Renesas Electronics Corp |
半導体集積回路
|
|
WO2011161798A1
(ja)
*
|
2010-06-24 |
2011-12-29 |
富士通株式会社 |
半導体記憶装置及び半導体記憶装置の制御方法
|
|
US8611175B2
(en)
*
|
2011-12-07 |
2013-12-17 |
Xilinx, Inc. |
Contention-free memory arrangement
|
|
CN102880569B
(zh)
*
|
2012-09-19 |
2015-12-16 |
重庆望江工业有限公司 |
多智能单元控制系统及其控制方法
|
|
US12537057B2
(en)
|
2015-09-30 |
2026-01-27 |
Sunrise Memory Corporation |
Three-dimensional vertical nor flash thin film transistor strings
|
|
US9842651B2
(en)
|
2015-11-25 |
2017-12-12 |
Sunrise Memory Corporation |
Three-dimensional vertical NOR flash thin film transistor strings
|
|
US11120884B2
(en)
|
2015-09-30 |
2021-09-14 |
Sunrise Memory Corporation |
Implementing logic function and generating analog signals using NOR memory strings
|
|
US9892800B2
(en)
|
2015-09-30 |
2018-02-13 |
Sunrise Memory Corporation |
Multi-gate NOR flash thin-film transistor strings arranged in stacked horizontal active strips with vertical control gates
|
|
US10121553B2
(en)
|
2015-09-30 |
2018-11-06 |
Sunrise Memory Corporation |
Capacitive-coupled non-volatile thin-film transistor NOR strings in three-dimensional arrays
|
|
US10608008B2
(en)
|
2017-06-20 |
2020-03-31 |
Sunrise Memory Corporation |
3-dimensional nor strings with segmented shared source regions
|
|
US10692874B2
(en)
|
2017-06-20 |
2020-06-23 |
Sunrise Memory Corporation |
3-dimensional NOR string arrays in segmented stacks
|
|
US10608011B2
(en)
|
2017-06-20 |
2020-03-31 |
Sunrise Memory Corporation |
3-dimensional NOR memory array architecture and methods for fabrication thereof
|
|
US11180861B2
(en)
|
2017-06-20 |
2021-11-23 |
Sunrise Memory Corporation |
3-dimensional NOR string arrays in segmented stacks
|
|
US10896916B2
(en)
|
2017-11-17 |
2021-01-19 |
Sunrise Memory Corporation |
Reverse memory cell
|
|
WO2019133534A1
(en)
|
2017-12-28 |
2019-07-04 |
Sunrise Memory Corporation |
3-dimensional nor memory array with very fine pitch: device and method
|
|
US10475812B2
(en)
|
2018-02-02 |
2019-11-12 |
Sunrise Memory Corporation |
Three-dimensional vertical NOR flash thin-film transistor strings
|
|
US11069696B2
(en)
|
2018-07-12 |
2021-07-20 |
Sunrise Memory Corporation |
Device structure for a 3-dimensional NOR memory array and methods for improved erase operations applied thereto
|
|
US11751391B2
(en)
|
2018-07-12 |
2023-09-05 |
Sunrise Memory Corporation |
Methods for fabricating a 3-dimensional memory structure of nor memory strings
|
|
WO2020014655A1
(en)
|
2018-07-12 |
2020-01-16 |
Sunrise Memory Corporation |
Fabrication method for a 3-dimensional nor memory array
|
|
TWI713195B
(zh)
|
2018-09-24 |
2020-12-11 |
美商森恩萊斯記憶體公司 |
三維nor記憶電路製程中之晶圓接合及其形成之積體電路
|
|
US11282855B2
(en)
|
2018-12-07 |
2022-03-22 |
Sunrise Memory Corporation |
Methods for forming multi-layer vertical NOR-type memory string arrays
|
|
JP7425069B2
(ja)
|
2019-01-30 |
2024-01-30 |
サンライズ メモリー コーポレイション |
基板接合を用いた高帯域幅・大容量メモリ組み込み型電子デバイス
|
|
JP7655853B2
(ja)
|
2019-02-11 |
2025-04-02 |
サンライズ メモリー コーポレイション |
垂直型薄膜トランジスタ、及び、垂直型薄膜トランジスタの、3次元メモリアレイのためのビット線コネクタとしての応用メモリ回路方法
|
|
JP2020166346A
(ja)
*
|
2019-03-28 |
2020-10-08 |
ラピスセミコンダクタ株式会社 |
半導体記憶装置
|
|
CN114026676B
(zh)
|
2019-07-09 |
2023-05-26 |
日升存储公司 |
水平反或型存储器串的三维阵列制程
|
|
US11917821B2
(en)
|
2019-07-09 |
2024-02-27 |
Sunrise Memory Corporation |
Process for a 3-dimensional array of horizontal nor-type memory strings
|
|
KR102728539B1
(ko)
|
2019-10-10 |
2024-11-12 |
에스케이하이닉스 주식회사 |
메모리
|
|
US11515309B2
(en)
|
2019-12-19 |
2022-11-29 |
Sunrise Memory Corporation |
Process for preparing a channel region of a thin-film transistor in a 3-dimensional thin-film transistor array
|
|
TWI767512B
(zh)
|
2020-01-22 |
2022-06-11 |
美商森恩萊斯記憶體公司 |
薄膜儲存電晶體中冷電子抹除
|
|
US12550382B2
(en)
|
2020-01-22 |
2026-02-10 |
Sunrise Memory Corporation |
Thin-film storage transistor with ferroelectric storage layer
|
|
WO2021159028A1
(en)
|
2020-02-07 |
2021-08-12 |
Sunrise Memory Corporation |
High capacity memory circuit with low effective latency
|
|
TWI783369B
(zh)
|
2020-02-07 |
2022-11-11 |
美商森恩萊斯記憶體公司 |
準揮發性系統級記憶體
|
|
US11507301B2
(en)
|
2020-02-24 |
2022-11-22 |
Sunrise Memory Corporation |
Memory module implementing memory centric architecture
|
|
WO2021173209A1
(en)
|
2020-02-24 |
2021-09-02 |
Sunrise Memory Corporation |
High capacity memory module including wafer-section memory circuit
|
|
US11561911B2
(en)
|
2020-02-24 |
2023-01-24 |
Sunrise Memory Corporation |
Channel controller for shared memory access
|
|
US11705496B2
(en)
|
2020-04-08 |
2023-07-18 |
Sunrise Memory Corporation |
Charge-trapping layer with optimized number of charge-trapping sites for fast program and erase of a memory cell in a 3-dimensional NOR memory string array
|
|
TW202220191A
(zh)
|
2020-07-21 |
2022-05-16 |
美商日升存儲公司 |
用於製造nor記憶體串之3維記憶體結構之方法
|
|
US11937424B2
(en)
|
2020-08-31 |
2024-03-19 |
Sunrise Memory Corporation |
Thin-film storage transistors in a 3-dimensional array of nor memory strings and process for fabricating the same
|
|
US11842777B2
(en)
|
2020-11-17 |
2023-12-12 |
Sunrise Memory Corporation |
Methods for reducing disturb errors by refreshing data alongside programming or erase operations
|
|
US11848056B2
(en)
|
2020-12-08 |
2023-12-19 |
Sunrise Memory Corporation |
Quasi-volatile memory with enhanced sense amplifier operation
|
|
WO2022140084A1
(en)
|
2020-12-21 |
2022-06-30 |
Sunrise Memory Corporation |
Bit line and source line connections for a 3-dimensional array of memory circuits
|
|
CN116547796A
(zh)
|
2021-01-20 |
2023-08-04 |
日升存储公司 |
垂直nor闪存薄膜晶体管串及其制造
|
|
WO2023287908A1
(en)
|
2021-07-16 |
2023-01-19 |
Sunrise Memory Corporation |
3-dimensional memory string array of thin-film ferroelectric transistors
|
|
US12402319B2
(en)
|
2021-09-14 |
2025-08-26 |
Sunrise Memory Corporation |
Three-dimensional memory string array of thin-film ferroelectric transistors formed with an oxide semiconductor channel
|
|
CN117373508A
(zh)
*
|
2022-06-30 |
2024-01-09 |
深圳市中兴微电子技术有限公司 |
多端口存储器、多端口存储器的读写方法及装置
|