JP2004362760A5 - - Google Patents

Download PDF

Info

Publication number
JP2004362760A5
JP2004362760A5 JP2004166015A JP2004166015A JP2004362760A5 JP 2004362760 A5 JP2004362760 A5 JP 2004362760A5 JP 2004166015 A JP2004166015 A JP 2004166015A JP 2004166015 A JP2004166015 A JP 2004166015A JP 2004362760 A5 JP2004362760 A5 JP 2004362760A5
Authority
JP
Japan
Prior art keywords
data
port
memory device
buffers
write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004166015A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004362760A (ja
Filing date
Publication date
Priority claimed from KR1020030035606A external-priority patent/KR100546331B1/ko
Application filed filed Critical
Publication of JP2004362760A publication Critical patent/JP2004362760A/ja
Publication of JP2004362760A5 publication Critical patent/JP2004362760A5/ja
Pending legal-status Critical Current

Links

JP2004166015A 2003-06-03 2004-06-03 マルチポートメモリ装置 Pending JP2004362760A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030035606A KR100546331B1 (ko) 2003-06-03 2003-06-03 스택 뱅크들 마다 독립적으로 동작하는 멀티 포트 메모리장치

Publications (2)

Publication Number Publication Date
JP2004362760A JP2004362760A (ja) 2004-12-24
JP2004362760A5 true JP2004362760A5 (https=) 2007-07-12

Family

ID=33487851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004166015A Pending JP2004362760A (ja) 2003-06-03 2004-06-03 マルチポートメモリ装置

Country Status (5)

Country Link
US (1) US7120081B2 (https=)
JP (1) JP2004362760A (https=)
KR (1) KR100546331B1 (https=)
DE (1) DE102004027882A1 (https=)
TW (1) TWI256647B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9230654B2 (en) 2005-09-30 2016-01-05 Conversant Intellectual Property Management Inc. Method and system for accessing a flash memory device

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100611404B1 (ko) * 2004-07-27 2006-08-11 주식회사 하이닉스반도체 메인 증폭기 및 반도체 장치
US7209405B2 (en) * 2005-02-23 2007-04-24 Micron Technology, Inc. Memory device and method having multiple internal data buses and memory bank interleaving
KR100670707B1 (ko) 2005-03-31 2007-01-17 주식회사 하이닉스반도체 멀티-포트 메모리 소자
US8429319B2 (en) 2005-09-28 2013-04-23 Hynix Semiconductor Inc. Multi-port memory device with serial input/output interface
KR100815176B1 (ko) * 2005-09-28 2008-03-19 주식회사 하이닉스반도체 멀티포트 메모리 장치
DE102006045248A1 (de) * 2005-09-29 2007-04-19 Hynix Semiconductor Inc., Ichon Multiport-Speichervorrichtung mit serieller Eingabe-/Ausgabeschnittstelle
KR100721581B1 (ko) 2005-09-29 2007-05-23 주식회사 하이닉스반도체 직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자
EP1932158A4 (en) 2005-09-30 2008-10-15 Mosaid Technologies Inc MEMORY WITH OUTPUT CONTROL
US11948629B2 (en) 2005-09-30 2024-04-02 Mosaid Technologies Incorporated Non-volatile memory device with concurrent bank operations
KR100735612B1 (ko) * 2005-12-22 2007-07-04 삼성전자주식회사 멀티패쓰 억세스블 반도체 메모리 장치
US20070150667A1 (en) * 2005-12-23 2007-06-28 Intel Corporation Multiported memory with ports mapped to bank sets
JP2007200512A (ja) * 2006-01-30 2007-08-09 Renesas Technology Corp 半導体記憶装置
KR100695436B1 (ko) * 2006-04-13 2007-03-16 주식회사 하이닉스반도체 직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자 및그의 동작 모드 제어방법
KR100781129B1 (ko) * 2006-06-05 2007-11-30 엠텍비젼 주식회사 다중 포트 메모리 장치 및 그 데이터의 출력 방법
KR100790446B1 (ko) 2006-06-30 2008-01-02 주식회사 하이닉스반도체 스택뱅크 구조를 갖는 반도체 메모리 장치
KR100846386B1 (ko) * 2006-09-21 2008-07-15 주식회사 하이닉스반도체 멀티포트 메모리 장치
KR100837811B1 (ko) 2006-11-15 2008-06-13 주식회사 하이닉스반도체 데이터 변환 회로 및 이를 이용한 반도체 메모리 장치
KR100871083B1 (ko) * 2007-02-27 2008-11-28 삼성전자주식회사 입출력 센스앰프를 구비하는 반도체 메모리 장치의레이아웃 구조
US7817491B2 (en) 2007-09-28 2010-10-19 Hynix Semiconductor Inc. Bank control device and semiconductor device including the same
KR100990140B1 (ko) * 2007-09-28 2010-10-29 주식회사 하이닉스반도체 반도체 메모리 소자
US9123395B2 (en) * 2007-11-09 2015-09-01 SK Hynix Inc. Stack bank type semiconductor memory apparatus capable of improving alignment margin
US8181003B2 (en) * 2008-05-29 2012-05-15 Axis Semiconductor, Inc. Instruction set design, control and communication in programmable microprocessor cores and the like
JP2011146094A (ja) * 2010-01-14 2011-07-28 Renesas Electronics Corp 半導体集積回路
WO2011161798A1 (ja) * 2010-06-24 2011-12-29 富士通株式会社 半導体記憶装置及び半導体記憶装置の制御方法
US8611175B2 (en) * 2011-12-07 2013-12-17 Xilinx, Inc. Contention-free memory arrangement
CN102880569B (zh) * 2012-09-19 2015-12-16 重庆望江工业有限公司 多智能单元控制系统及其控制方法
US12537057B2 (en) 2015-09-30 2026-01-27 Sunrise Memory Corporation Three-dimensional vertical nor flash thin film transistor strings
US9842651B2 (en) 2015-11-25 2017-12-12 Sunrise Memory Corporation Three-dimensional vertical NOR flash thin film transistor strings
US11120884B2 (en) 2015-09-30 2021-09-14 Sunrise Memory Corporation Implementing logic function and generating analog signals using NOR memory strings
US9892800B2 (en) 2015-09-30 2018-02-13 Sunrise Memory Corporation Multi-gate NOR flash thin-film transistor strings arranged in stacked horizontal active strips with vertical control gates
US10121553B2 (en) 2015-09-30 2018-11-06 Sunrise Memory Corporation Capacitive-coupled non-volatile thin-film transistor NOR strings in three-dimensional arrays
US10608008B2 (en) 2017-06-20 2020-03-31 Sunrise Memory Corporation 3-dimensional nor strings with segmented shared source regions
US10692874B2 (en) 2017-06-20 2020-06-23 Sunrise Memory Corporation 3-dimensional NOR string arrays in segmented stacks
US10608011B2 (en) 2017-06-20 2020-03-31 Sunrise Memory Corporation 3-dimensional NOR memory array architecture and methods for fabrication thereof
US11180861B2 (en) 2017-06-20 2021-11-23 Sunrise Memory Corporation 3-dimensional NOR string arrays in segmented stacks
US10896916B2 (en) 2017-11-17 2021-01-19 Sunrise Memory Corporation Reverse memory cell
WO2019133534A1 (en) 2017-12-28 2019-07-04 Sunrise Memory Corporation 3-dimensional nor memory array with very fine pitch: device and method
US10475812B2 (en) 2018-02-02 2019-11-12 Sunrise Memory Corporation Three-dimensional vertical NOR flash thin-film transistor strings
US11069696B2 (en) 2018-07-12 2021-07-20 Sunrise Memory Corporation Device structure for a 3-dimensional NOR memory array and methods for improved erase operations applied thereto
US11751391B2 (en) 2018-07-12 2023-09-05 Sunrise Memory Corporation Methods for fabricating a 3-dimensional memory structure of nor memory strings
WO2020014655A1 (en) 2018-07-12 2020-01-16 Sunrise Memory Corporation Fabrication method for a 3-dimensional nor memory array
TWI713195B (zh) 2018-09-24 2020-12-11 美商森恩萊斯記憶體公司 三維nor記憶電路製程中之晶圓接合及其形成之積體電路
US11282855B2 (en) 2018-12-07 2022-03-22 Sunrise Memory Corporation Methods for forming multi-layer vertical NOR-type memory string arrays
JP7425069B2 (ja) 2019-01-30 2024-01-30 サンライズ メモリー コーポレイション 基板接合を用いた高帯域幅・大容量メモリ組み込み型電子デバイス
JP7655853B2 (ja) 2019-02-11 2025-04-02 サンライズ メモリー コーポレイション 垂直型薄膜トランジスタ、及び、垂直型薄膜トランジスタの、3次元メモリアレイのためのビット線コネクタとしての応用メモリ回路方法
JP2020166346A (ja) * 2019-03-28 2020-10-08 ラピスセミコンダクタ株式会社 半導体記憶装置
CN114026676B (zh) 2019-07-09 2023-05-26 日升存储公司 水平反或型存储器串的三维阵列制程
US11917821B2 (en) 2019-07-09 2024-02-27 Sunrise Memory Corporation Process for a 3-dimensional array of horizontal nor-type memory strings
KR102728539B1 (ko) 2019-10-10 2024-11-12 에스케이하이닉스 주식회사 메모리
US11515309B2 (en) 2019-12-19 2022-11-29 Sunrise Memory Corporation Process for preparing a channel region of a thin-film transistor in a 3-dimensional thin-film transistor array
TWI767512B (zh) 2020-01-22 2022-06-11 美商森恩萊斯記憶體公司 薄膜儲存電晶體中冷電子抹除
US12550382B2 (en) 2020-01-22 2026-02-10 Sunrise Memory Corporation Thin-film storage transistor with ferroelectric storage layer
WO2021159028A1 (en) 2020-02-07 2021-08-12 Sunrise Memory Corporation High capacity memory circuit with low effective latency
TWI783369B (zh) 2020-02-07 2022-11-11 美商森恩萊斯記憶體公司 準揮發性系統級記憶體
US11507301B2 (en) 2020-02-24 2022-11-22 Sunrise Memory Corporation Memory module implementing memory centric architecture
WO2021173209A1 (en) 2020-02-24 2021-09-02 Sunrise Memory Corporation High capacity memory module including wafer-section memory circuit
US11561911B2 (en) 2020-02-24 2023-01-24 Sunrise Memory Corporation Channel controller for shared memory access
US11705496B2 (en) 2020-04-08 2023-07-18 Sunrise Memory Corporation Charge-trapping layer with optimized number of charge-trapping sites for fast program and erase of a memory cell in a 3-dimensional NOR memory string array
TW202220191A (zh) 2020-07-21 2022-05-16 美商日升存儲公司 用於製造nor記憶體串之3維記憶體結構之方法
US11937424B2 (en) 2020-08-31 2024-03-19 Sunrise Memory Corporation Thin-film storage transistors in a 3-dimensional array of nor memory strings and process for fabricating the same
US11842777B2 (en) 2020-11-17 2023-12-12 Sunrise Memory Corporation Methods for reducing disturb errors by refreshing data alongside programming or erase operations
US11848056B2 (en) 2020-12-08 2023-12-19 Sunrise Memory Corporation Quasi-volatile memory with enhanced sense amplifier operation
WO2022140084A1 (en) 2020-12-21 2022-06-30 Sunrise Memory Corporation Bit line and source line connections for a 3-dimensional array of memory circuits
CN116547796A (zh) 2021-01-20 2023-08-04 日升存储公司 垂直nor闪存薄膜晶体管串及其制造
WO2023287908A1 (en) 2021-07-16 2023-01-19 Sunrise Memory Corporation 3-dimensional memory string array of thin-film ferroelectric transistors
US12402319B2 (en) 2021-09-14 2025-08-26 Sunrise Memory Corporation Three-dimensional memory string array of thin-film ferroelectric transistors formed with an oxide semiconductor channel
CN117373508A (zh) * 2022-06-30 2024-01-09 深圳市中兴微电子技术有限公司 多端口存储器、多端口存储器的读写方法及装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63269393A (ja) * 1987-04-28 1988-11-07 Matsushita Electric Ind Co Ltd 多ポ−ト半導体記憶素子
JP2500740B2 (ja) * 1993-04-06 1996-05-29 日本電気株式会社 デュアルポ―トメモリ
JP3523004B2 (ja) * 1997-03-19 2004-04-26 株式会社東芝 同期式ランダムアクセスメモリ
JP4000233B2 (ja) * 1998-06-03 2007-10-31 富士通株式会社 半導体記憶装置及びデータバス制御方法
JP2000182370A (ja) * 1998-12-16 2000-06-30 Toshiba Corp 半導体記憶装置
JP2000215659A (ja) * 1999-01-27 2000-08-04 Fujitsu Ltd 半導体メモリ及び情報処理装置
KR100326086B1 (ko) * 2000-02-03 2002-03-07 윤종용 반도체 메모리 장치 및 이 장치의 프리차지 방법
JP3940539B2 (ja) * 2000-02-03 2007-07-04 株式会社日立製作所 半導体集積回路
JP2002109884A (ja) * 2000-09-27 2002-04-12 Toshiba Corp メモリ装置
DE10054520C1 (de) * 2000-11-03 2002-03-21 Infineon Technologies Ag Datenspeicher mit mehreren Bänken
US6603683B2 (en) * 2001-06-25 2003-08-05 International Business Machines Corporation Decoding scheme for a stacked bank architecture
US6940753B2 (en) * 2002-09-24 2005-09-06 Sandisk Corporation Highly compact non-volatile memory and method therefor with space-efficient data registers
US7571287B2 (en) * 2003-03-13 2009-08-04 Marvell World Trade Ltd. Multiport memory architecture, devices and systems including the same, and methods of using the same
KR100532433B1 (ko) * 2003-05-07 2005-11-30 삼성전자주식회사 하나의 패드를 통하여 데이터를 동시에 입출력하기 위한장치 및 방법
US7006402B2 (en) * 2003-08-29 2006-02-28 Hynix Semiconductor Inc Multi-port memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9230654B2 (en) 2005-09-30 2016-01-05 Conversant Intellectual Property Management Inc. Method and system for accessing a flash memory device

Similar Documents

Publication Publication Date Title
JP2004362760A5 (https=)
KR100546331B1 (ko) 스택 뱅크들 마다 독립적으로 동작하는 멀티 포트 메모리장치
US20250038162A1 (en) Non-volatile dynamic random access memory
TW559830B (en) Data memory with a plurality of banks
TW200537513A (en) Multi-port memory device having serial I/O interface
US20090103374A1 (en) Memory modules and memory systems having the same
US6138204A (en) Multi bus access memory
KR20050022855A (ko) 멀티-포트 메모리 소자
CN1716446B (zh) 输入/输出线电路和使用该电路的半导体存储器装置
TW202121408A (zh) 用來在記憶體模組中增加資料預取數量的裝置
KR20160004759A (ko) 반도체 장치
JP2010113793A5 (https=)
KR20040023856A (ko) 효율적인 리던던시 구제율을 갖는 반도체 메모리 장치
US20070086228A1 (en) Memory modules and memory systems having the same
CN100428144C (zh) 多埠暂存器档案的平衡位元胞设计
CN104217748B (zh) 存储器和存储系统
CN103177751B (zh) 一种存储器阵列结构
TW200636721A (en) Memory device with pre-fetch circuit and pre-fetch method
US7139211B2 (en) Semiconductor memory device for reducing cell area
US20120005434A1 (en) Semiconductor memory apparatus
JP2012203938A (ja) 半導体記憶装置
CN1941179B (zh) 半导体存储装置
US7106612B2 (en) Semiconductor memory device using tapered arrangement of local input and output sense amplifiers
CN112837717B (zh) 用来在存储器模块中增加数据预取数量的装置
US20250166669A1 (en) Memory device and operation method for data movement within memory sections and through external interfaces of memory device