ATE373307T1 - Simultaner mehrbank für flash-speicher - Google Patents

Simultaner mehrbank für flash-speicher

Info

Publication number
ATE373307T1
ATE373307T1 AT01916607T AT01916607T ATE373307T1 AT E373307 T1 ATE373307 T1 AT E373307T1 AT 01916607 T AT01916607 T AT 01916607T AT 01916607 T AT01916607 T AT 01916607T AT E373307 T1 ATE373307 T1 AT E373307T1
Authority
AT
Austria
Prior art keywords
write
bank
read
banks
address
Prior art date
Application number
AT01916607T
Other languages
English (en)
Inventor
Takao Akaogi
Kendra Nguyen
Lee Cleveland
Original Assignee
Spansion Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spansion Llc filed Critical Spansion Llc
Application granted granted Critical
Publication of ATE373307T1 publication Critical patent/ATE373307T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously

Landscapes

  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Medicinal Preparation (AREA)
AT01916607T 2000-03-15 2001-03-12 Simultaner mehrbank für flash-speicher ATE373307T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/526,239 US6240040B1 (en) 2000-03-15 2000-03-15 Multiple bank simultaneous operation for a flash memory

Publications (1)

Publication Number Publication Date
ATE373307T1 true ATE373307T1 (de) 2007-09-15

Family

ID=24096499

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01916607T ATE373307T1 (de) 2000-03-15 2001-03-12 Simultaner mehrbank für flash-speicher

Country Status (10)

Country Link
US (1) US6240040B1 (de)
EP (1) EP1266377B1 (de)
JP (1) JP4744765B2 (de)
KR (1) KR100675959B1 (de)
CN (1) CN1277272C (de)
AT (1) ATE373307T1 (de)
BR (1) BR0108811A (de)
DE (1) DE60130437T2 (de)
TW (1) TWI222073B (de)
WO (1) WO2001069603A2 (de)

Families Citing this family (122)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL125604A (en) * 1997-07-30 2004-03-28 Saifun Semiconductors Ltd Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge
JP3807582B2 (ja) * 1999-02-18 2006-08-09 株式会社ルネサステクノロジ 情報処理装置及び半導体装置
US6377502B1 (en) * 1999-05-10 2002-04-23 Kabushiki Kaisha Toshiba Semiconductor device that enables simultaneous read and write/erase operation
US6851026B1 (en) 2000-07-28 2005-02-01 Micron Technology, Inc. Synchronous flash memory with concurrent write and read operation
US6396741B1 (en) 2000-05-04 2002-05-28 Saifun Semiconductors Ltd. Programming of nonvolatile memory cells
US6928001B2 (en) * 2000-12-07 2005-08-09 Saifun Semiconductors Ltd. Programming and erasing methods for a non-volatile memory cell
US6883044B1 (en) * 2000-07-28 2005-04-19 Micron Technology, Inc. Synchronous flash memory with simultaneous access to one or more banks
US6570789B2 (en) 2000-12-29 2003-05-27 Intel Corporation Load for non-volatile memory drain bias
US6535423B2 (en) 2000-12-29 2003-03-18 Intel Corporation Drain bias for non-volatile memory
US6744671B2 (en) * 2000-12-29 2004-06-01 Intel Corporation Kicker for non-volatile memory drain bias
US6477086B2 (en) * 2000-12-29 2002-11-05 Intel Corporation Local sensing of non-volatile memory
US6858865B2 (en) * 2001-02-23 2005-02-22 Micron Technology, Inc. Doped aluminum oxide dielectrics
US6584034B1 (en) * 2001-04-23 2003-06-24 Aplus Flash Technology Inc. Flash memory array structure suitable for multiple simultaneous operations
JP2003123488A (ja) * 2001-10-11 2003-04-25 Toshiba Corp 半導体記憶装置
KR100454144B1 (ko) * 2001-11-23 2004-10-26 주식회사 하이닉스반도체 멀티 뱅크 구조의 플래쉬 메모리 장치
JP2003223792A (ja) * 2002-01-25 2003-08-08 Hitachi Ltd 不揮発性メモリ及びメモリカード
US6700818B2 (en) * 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
US7190620B2 (en) * 2002-01-31 2007-03-13 Saifun Semiconductors Ltd. Method for operating a memory device
US6975536B2 (en) * 2002-01-31 2005-12-13 Saifun Semiconductors Ltd. Mass storage array and methods for operation thereof
JP4050548B2 (ja) * 2002-04-18 2008-02-20 株式会社ルネサステクノロジ 半導体記憶装置
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US6826107B2 (en) 2002-08-01 2004-11-30 Saifun Semiconductors Ltd. High voltage insertion in flash memory cards
KR100490084B1 (ko) * 2002-09-12 2005-05-17 삼성전자주식회사 효율적인 리던던시 구제율을 갖는 반도체 메모리 장치
US6963505B2 (en) 2002-10-29 2005-11-08 Aifun Semiconductors Ltd. Method circuit and system for determining a reference voltage
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US6992932B2 (en) 2002-10-29 2006-01-31 Saifun Semiconductors Ltd Method circuit and system for read error detection in a non-volatile memory array
US6965527B2 (en) * 2002-11-27 2005-11-15 Matrix Semiconductor, Inc Multibank memory on a die
US6967896B2 (en) * 2003-01-30 2005-11-22 Saifun Semiconductors Ltd Address scramble
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US8108588B2 (en) * 2003-04-16 2012-01-31 Sandisk Il Ltd. Monolithic read-while-write flash memory device
US7142464B2 (en) * 2003-04-29 2006-11-28 Saifun Semiconductors Ltd. Apparatus and methods for multi-level sensing in a memory array
JP2004348788A (ja) * 2003-05-20 2004-12-09 Sharp Corp 半導体記憶装置及び携帯電子機器
KR100553691B1 (ko) * 2003-06-17 2006-02-24 윈텍 주식회사 영상처리장치 및 그 방법
US7123532B2 (en) 2003-09-16 2006-10-17 Saifun Semiconductors Ltd. Operating array cells with matched reference cells
US6954393B2 (en) * 2003-09-16 2005-10-11 Saifun Semiconductors Ltd. Reading array cell with matched reference cell
US7210002B2 (en) * 2003-11-19 2007-04-24 Qualcomm Incorporated System and method for operating dual bank read-while-write flash
KR100606046B1 (ko) * 2004-01-20 2006-07-28 삼성전자주식회사 휴대용 단말기의 낸드 플래쉬 메모리를 이용한 부팅 장치및 방법
US7652930B2 (en) 2004-04-01 2010-01-26 Saifun Semiconductors Ltd. Method, circuit and system for erasing one or more non-volatile memory cells
US7755938B2 (en) 2004-04-19 2010-07-13 Saifun Semiconductors Ltd. Method for reading a memory array with neighbor effect cancellation
US7366025B2 (en) * 2004-06-10 2008-04-29 Saifun Semiconductors Ltd. Reduced power programming of non-volatile cells
US7095655B2 (en) * 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
US20060069896A1 (en) * 2004-09-27 2006-03-30 Sigmatel, Inc. System and method for storing data
US7280428B2 (en) 2004-09-30 2007-10-09 Rambus Inc. Multi-column addressing mode memory system including an integrated circuit memory device
JP4582551B2 (ja) * 2004-09-30 2010-11-17 スパンション エルエルシー 半導体装置およびデータ書き込み方法
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US8595459B2 (en) * 2004-11-29 2013-11-26 Rambus Inc. Micro-threaded memory
US7257025B2 (en) * 2004-12-09 2007-08-14 Saifun Semiconductors Ltd Method for reading non-volatile memory cells
JP4944763B2 (ja) * 2005-01-27 2012-06-06 スパンション エルエルシー 半導体装置、アドレス割り付け方法及びベリファイ方法
KR100590388B1 (ko) * 2005-03-10 2006-06-19 주식회사 하이닉스반도체 멀티-플레인 타입 플래쉬 메모리 장치와, 그 프로그램 동작및 리드 동작 제어 방법
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US8400841B2 (en) 2005-06-15 2013-03-19 Spansion Israel Ltd. Device to program adjacent storage cells of different NROM cells
US7184313B2 (en) * 2005-06-17 2007-02-27 Saifun Semiconductors Ltd. Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells
JP2007027760A (ja) 2005-07-18 2007-02-01 Saifun Semiconductors Ltd 高密度不揮発性メモリアレイ及び製造方法
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
JP4842593B2 (ja) * 2005-09-05 2011-12-21 株式会社日立製作所 ストレージ仮想化装置のデバイス制御引継ぎ方法
CN101273413B (zh) * 2005-09-29 2011-11-16 特科2000国际有限公司 使用单层单元和多层单元闪速存储器的便携式数据存储
US7260019B1 (en) * 2005-10-31 2007-08-21 Spansion Llc Memory array
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7441102B2 (en) * 2006-02-28 2008-10-21 Freescale Semiconductor, Inc. Integrated circuit with functional state configurable memory and method of configuring functional states of the integrated circuit memory
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US20070260841A1 (en) 2006-05-02 2007-11-08 Hampel Craig E Memory module with reduced access granularity
US7701764B2 (en) 2006-05-17 2010-04-20 Micron Technology, Inc. Apparatus and method for reduced peak power consumption during common operation of multi-NAND flash memory devices
TWI301270B (en) * 2006-06-30 2008-09-21 Winbond Electronics Corp Semiconductor memory and circuit and method of decoding address for the same
US7769942B2 (en) * 2006-07-27 2010-08-03 Rambus, Inc. Cross-threaded memory system
US8706968B2 (en) * 2007-12-06 2014-04-22 Fusion-Io, Inc. Apparatus, system, and method for redundant write caching
US9495241B2 (en) 2006-12-06 2016-11-15 Longitude Enterprise Flash S.A.R.L. Systems and methods for adaptive data storage
US8074011B2 (en) * 2006-12-06 2011-12-06 Fusion-Io, Inc. Apparatus, system, and method for storage space recovery after reaching a read count limit
CN101622596A (zh) * 2006-12-06 2010-01-06 弗森多系统公司（dba弗森-艾奥） 使用空数据令牌指令管理存储设备中的数据的装置、系统和方法
US9116823B2 (en) 2006-12-06 2015-08-25 Intelligent Intellectual Property Holdings 2 Llc Systems and methods for adaptive error-correction coding
CN101681282A (zh) 2006-12-06 2010-03-24 弗森多系统公司（dba弗森-艾奥） 用于共享的、前端、分布式raid的装置、系统和方法
US8443134B2 (en) * 2006-12-06 2013-05-14 Fusion-Io, Inc. Apparatus, system, and method for graceful cache device degradation
US9104599B2 (en) 2007-12-06 2015-08-11 Intelligent Intellectual Property Holdings 2 Llc Apparatus, system, and method for destaging cached data
US8489817B2 (en) 2007-12-06 2013-07-16 Fusion-Io, Inc. Apparatus, system, and method for caching data
US7836226B2 (en) 2007-12-06 2010-11-16 Fusion-Io, Inc. Apparatus, system, and method for coordinating storage requests in a multi-processor/multi-thread environment
US8195912B2 (en) * 2007-12-06 2012-06-05 Fusion-io, Inc Apparatus, system, and method for efficient mapping of virtual and physical addresses
US9519540B2 (en) 2007-12-06 2016-12-13 Sandisk Technologies Llc Apparatus, system, and method for destaging cached data
US8316277B2 (en) * 2007-12-06 2012-11-20 Fusion-Io, Inc. Apparatus, system, and method for ensuring data validity in a data storage process
US8068365B2 (en) * 2008-02-04 2011-11-29 Mosaid Technologies Incorporated Non-volatile memory device having configurable page size
WO2009097681A1 (en) * 2008-02-04 2009-08-13 Mosaid Technologies Incorporated Flexible memory operations in nand flash devices
WO2009105362A1 (en) * 2008-02-19 2009-08-27 Rambus Inc. Multi-bank flash memory architecture with assignable resources
JP2012511789A (ja) * 2008-12-09 2012-05-24 ラムバス・インコーポレーテッド 並行且つパイプライン化されたメモリ動作用の不揮発性メモリデバイス
US7859936B1 (en) * 2009-01-26 2010-12-28 Xilinx, Inc. Method and apparatus for saving and restoring the state of a power-gated memory device
US8621159B2 (en) 2009-02-11 2013-12-31 Rambus Inc. Shared access memory scheme
WO2011031796A2 (en) 2009-09-08 2011-03-17 Fusion-Io, Inc. Apparatus, system, and method for caching data on a solid-state storage device
WO2011031900A2 (en) 2009-09-09 2011-03-17 Fusion-Io, Inc. Apparatus, system, and method for power reduction management in a storage device
US9223514B2 (en) 2009-09-09 2015-12-29 SanDisk Technologies, Inc. Erase suspend/resume for memory
KR101678868B1 (ko) * 2010-02-11 2016-11-23 삼성전자주식회사 플래시 주소 변환 장치 및 그 방법
US8984216B2 (en) 2010-09-09 2015-03-17 Fusion-Io, Llc Apparatus, system, and method for managing lifetime of a storage device
US10817421B2 (en) 2010-12-13 2020-10-27 Sandisk Technologies Llc Persistent data structures
US9047178B2 (en) 2010-12-13 2015-06-02 SanDisk Technologies, Inc. Auto-commit memory synchronization
US10817502B2 (en) 2010-12-13 2020-10-27 Sandisk Technologies Llc Persistent memory management
US9208071B2 (en) 2010-12-13 2015-12-08 SanDisk Technologies, Inc. Apparatus, system, and method for accessing memory
US8527693B2 (en) 2010-12-13 2013-09-03 Fusion IO, Inc. Apparatus, system, and method for auto-commit memory
US9218278B2 (en) 2010-12-13 2015-12-22 SanDisk Technologies, Inc. Auto-commit memory
WO2012106362A2 (en) 2011-01-31 2012-08-09 Fusion-Io, Inc. Apparatus, system, and method for managing eviction of data
US8874823B2 (en) 2011-02-15 2014-10-28 Intellectual Property Holdings 2 Llc Systems and methods for managing data input/output operations
US9201677B2 (en) 2011-05-23 2015-12-01 Intelligent Intellectual Property Holdings 2 Llc Managing data input/output operations
US9003104B2 (en) 2011-02-15 2015-04-07 Intelligent Intellectual Property Holdings 2 Llc Systems and methods for a file-level cache
US9141527B2 (en) 2011-02-25 2015-09-22 Intelligent Intellectual Property Holdings 2 Llc Managing cache pools
US9268719B2 (en) 2011-08-05 2016-02-23 Rambus Inc. Memory signal buffers and modules supporting variable access granularity
US9251052B2 (en) 2012-01-12 2016-02-02 Intelligent Intellectual Property Holdings 2 Llc Systems and methods for profiling a non-volatile cache having a logical-to-physical translation layer
US10102117B2 (en) 2012-01-12 2018-10-16 Sandisk Technologies Llc Systems and methods for cache and storage device coordination
US9767032B2 (en) 2012-01-12 2017-09-19 Sandisk Technologies Llc Systems and methods for cache endurance
US9251086B2 (en) 2012-01-24 2016-02-02 SanDisk Technologies, Inc. Apparatus, system, and method for managing a cache
US9116812B2 (en) 2012-01-27 2015-08-25 Intelligent Intellectual Property Holdings 2 Llc Systems and methods for a de-duplication cache
US10359972B2 (en) 2012-08-31 2019-07-23 Sandisk Technologies Llc Systems, methods, and interfaces for adaptive persistence
US10019353B2 (en) 2012-03-02 2018-07-10 Longitude Enterprise Flash S.A.R.L. Systems and methods for referencing data on a storage medium
US10339056B2 (en) 2012-07-03 2019-07-02 Sandisk Technologies Llc Systems, methods and apparatus for cache transfers
US9612966B2 (en) 2012-07-03 2017-04-04 Sandisk Technologies Llc Systems, methods and apparatus for a virtual machine cache
US9715909B2 (en) 2013-03-14 2017-07-25 Micron Technology, Inc. Apparatuses and methods for controlling data timing in a multi-memory system
US9842053B2 (en) 2013-03-15 2017-12-12 Sandisk Technologies Llc Systems and methods for persistent cache logging
US9384830B2 (en) 2014-05-06 2016-07-05 Micron Technology, Inc. Apparatuses and methods for performing multiple memory operations
CN104461460B (zh) * 2014-11-11 2017-07-28 盛科网络（苏州）有限公司 同时配置多个内核寄存器的方法及装置
US10009438B2 (en) 2015-05-20 2018-06-26 Sandisk Technologies Llc Transaction log acceleration
KR101936951B1 (ko) 2018-04-11 2019-01-11 주식회사 맴레이 메모리 제어 장치 및 이를 포함하는 메모리 시스템
US11101001B2 (en) 2018-05-08 2021-08-24 Sandisk Technologies Llc Non-volatile memory with multi-plane mixed sub-block programming
KR101952827B1 (ko) 2018-06-29 2019-02-27 주식회사 맴레이 메모리 제어 장치 및 이를 포함하는 메모리 시스템
CN113409870A (zh) * 2021-06-30 2021-09-17 芯天下技术股份有限公司 一种闪存擦除方法、扇区选择电路、装置和电子设备
CN115050400A (zh) * 2022-06-27 2022-09-13 清华大学 一种存储器的写入方法和写入装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3464271B2 (ja) * 1994-04-12 2003-11-05 三菱電機株式会社 不揮発性半導体記憶装置
EP0745995B1 (de) * 1995-05-05 2001-04-11 STMicroelectronics S.r.l. Anordnung von nichtflüchtigen EEPROM,insbesondere Flash-EEPROM
JPH10144086A (ja) * 1996-11-14 1998-05-29 Sharp Corp 不揮発性半導体記憶装置
US5847998A (en) 1996-12-20 1998-12-08 Advanced Micro Devices, Inc. Non-volatile memory array that enables simultaneous read and write operations
US5867430A (en) * 1996-12-20 1999-02-02 Advanced Micro Devices Inc Bank architecture for a non-volatile memory enabling simultaneous reading and writing
JPH1116348A (ja) * 1997-06-25 1999-01-22 Hitachi Ltd 半導体記憶装置
JP3590246B2 (ja) * 1997-10-13 2004-11-17 株式会社日立製作所 半導体記憶装置
JPH11224492A (ja) * 1997-11-06 1999-08-17 Toshiba Corp 半導体記憶装置、不揮発性半導体記憶装置及びフラッシュメモリ
US6088264A (en) * 1998-01-05 2000-07-11 Intel Corporation Flash memory partitioning for read-while-write operation
US6016270A (en) * 1998-03-06 2000-01-18 Alliance Semiconductor Corporation Flash memory architecture that utilizes a time-shared address bus scheme and separate memory cell access paths for simultaneous read/write operations
TW430815B (en) * 1998-06-03 2001-04-21 Fujitsu Ltd Semiconductor integrated circuit memory and, bus control method
JP4047515B2 (ja) * 1999-05-10 2008-02-13 株式会社東芝 半導体装置
US6111787A (en) * 1999-10-19 2000-08-29 Advanced Micro Devices, Inc. Address transistion detect timing architecture for a simultaneous operation flash memory device

Also Published As

Publication number Publication date
EP1266377B1 (de) 2007-09-12
TWI222073B (en) 2004-10-11
WO2001069603A3 (en) 2002-02-21
EP1266377A2 (de) 2002-12-18
CN1419697A (zh) 2003-05-21
BR0108811A (pt) 2002-11-05
US6240040B1 (en) 2001-05-29
JP2003527724A (ja) 2003-09-16
KR100675959B1 (ko) 2007-02-01
KR20030014368A (ko) 2003-02-17
DE60130437T2 (de) 2008-04-30
WO2001069603A2 (en) 2001-09-20
CN1277272C (zh) 2006-09-27
DE60130437D1 (de) 2007-10-25
JP4744765B2 (ja) 2011-08-10

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