TWI245806B - Thin film aluminum alloy and sputtering target to form the same - Google Patents

Thin film aluminum alloy and sputtering target to form the same Download PDF

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Publication number
TWI245806B
TWI245806B TW093132008A TW93132008A TWI245806B TW I245806 B TWI245806 B TW I245806B TW 093132008 A TW093132008 A TW 093132008A TW 93132008 A TW93132008 A TW 93132008A TW I245806 B TWI245806 B TW I245806B
Authority
TW
Taiwan
Prior art keywords
film
aluminum alloy
thin
hardness
alloy
Prior art date
Application number
TW093132008A
Other languages
English (en)
Chinese (zh)
Other versions
TW200504231A (en
Inventor
Junichiro Hagiwara
Ichiro Tokuda
Original Assignee
Ulvac Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Materials Inc filed Critical Ulvac Materials Inc
Publication of TW200504231A publication Critical patent/TW200504231A/zh
Application granted granted Critical
Publication of TWI245806B publication Critical patent/TWI245806B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53219—Aluminium alloys
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
TW093132008A 2001-08-31 2002-08-29 Thin film aluminum alloy and sputtering target to form the same TWI245806B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001263085A JP4783525B2 (ja) 2001-08-31 2001-08-31 薄膜アルミニウム合金及び薄膜アルミニウム合金形成用スパッタリングターゲット

Publications (2)

Publication Number Publication Date
TW200504231A TW200504231A (en) 2005-02-01
TWI245806B true TWI245806B (en) 2005-12-21

Family

ID=19089896

Family Applications (2)

Application Number Title Priority Date Filing Date
TW091119708A TWI245805B (en) 2001-08-31 2002-08-29 Thin film aluminum alloy and sputtering target to form the same
TW093132008A TWI245806B (en) 2001-08-31 2002-08-29 Thin film aluminum alloy and sputtering target to form the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW091119708A TWI245805B (en) 2001-08-31 2002-08-29 Thin film aluminum alloy and sputtering target to form the same

Country Status (3)

Country Link
US (1) US6791188B2 (enExample)
JP (1) JP4783525B2 (enExample)
TW (2) TWI245805B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103548420A (zh) * 2011-05-24 2014-01-29 株式会社神户制钢所 含有有机el显示器用的反射阳极电极的配线结构

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3940385B2 (ja) * 2002-12-19 2007-07-04 株式会社神戸製鋼所 表示デバイスおよびその製法
JP2006339666A (ja) * 2002-12-19 2006-12-14 Kobe Steel Ltd アルミニウム合金膜形成用スパッタリングターゲット
JP2005086118A (ja) * 2003-09-11 2005-03-31 Renesas Technology Corp 半導体装置
EP1683172B1 (en) * 2003-10-31 2007-12-26 Nxp B.V. Radio-frequency microelectromechanical systems and a method of manufacturing such systems
JP4390260B2 (ja) * 2004-02-16 2009-12-24 三井金属鉱業株式会社 高耐熱性アルミニウム合金配線材料及びターゲット材
JP4377788B2 (ja) 2004-09-27 2009-12-02 株式会社神戸製鋼所 半導体配線用Ｃｕ合金、Ｃｕ合金配線の製法、該製法で得られたＣｕ合金配線を有する半導体装置、並びに半導体のＣｕ合金配線形成用スパッタリングターゲット
US20060081465A1 (en) * 2004-10-19 2006-04-20 Kobelco Research Institute, Inc. Assembly for sputtering aluminum-neodymium alloys
JP4330517B2 (ja) * 2004-11-02 2009-09-16 株式会社神戸製鋼所 Ｃｕ合金薄膜およびＣｕ合金スパッタリングターゲット並びにフラットパネルディスプレイ
JP2006240289A (ja) * 2005-02-07 2006-09-14 Kobe Steel Ltd 光情報記録媒体用記録膜および光情報記録媒体ならびにスパッタリングターゲット
CN100511687C (zh) * 2005-02-17 2009-07-08 株式会社神户制钢所 显示器和用于制备该显示器的溅射靶
JP4117001B2 (ja) * 2005-02-17 2008-07-09 株式会社神戸製鋼所 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット
JP2007072427A (ja) * 2005-03-10 2007-03-22 Mitsubishi Materials Corp 耐腐食性に優れた反射板用反射膜およびこの耐腐食性に優れた反射板用反射膜を形成するためのスパッタリングターゲット
JP4621989B2 (ja) * 2005-03-10 2011-02-02 三菱マテリアル株式会社 耐腐食性に優れた反射板用反射膜およびこの耐腐食性に優れた反射板用反射膜を形成するためのスパッタリングターゲット
JP4542008B2 (ja) * 2005-06-07 2010-09-08 株式会社神戸製鋼所 表示デバイス
US7683370B2 (en) 2005-08-17 2010-03-23 Kobe Steel, Ltd. Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices
US7411298B2 (en) * 2005-08-17 2008-08-12 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices
JP4117002B2 (ja) 2005-12-02 2008-07-09 株式会社神戸製鋼所 薄膜トランジスタ基板および表示デバイス
JP4559490B2 (ja) * 2005-12-22 2010-10-06 パイオニア株式会社 光記録媒体
CN101395296B (zh) 2006-03-06 2012-03-28 陶斯摩有限公司 溅射靶
US20090022982A1 (en) * 2006-03-06 2009-01-22 Tosoh Smd, Inc. Electronic Device, Method of Manufacture of Same and Sputtering Target
US20070251819A1 (en) * 2006-05-01 2007-11-01 Kardokus Janine K Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets
US7781767B2 (en) 2006-05-31 2010-08-24 Kobe Steel, Ltd. Thin film transistor substrate and display device
JP2008098611A (ja) * 2006-09-15 2008-04-24 Kobe Steel Ltd 表示装置
JP4280277B2 (ja) * 2006-09-28 2009-06-17 株式会社神戸製鋼所 表示デバイスの製法
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JP2008127623A (ja) * 2006-11-20 2008-06-05 Kobelco Kaken:Kk Ａｌ基合金スパッタリングターゲットおよびその製造方法
JP4170367B2 (ja) 2006-11-30 2008-10-22 株式会社神戸製鋼所 表示デバイス用Ａｌ合金膜、表示デバイス、及びスパッタリングターゲット
JP4355743B2 (ja) * 2006-12-04 2009-11-04 株式会社神戸製鋼所 Ｃｕ合金配線膜とそのＣｕ合金配線膜を用いたフラットパネルディスプレイ用ＴＦＴ素子、及びそのＣｕ合金配線膜を作製するためのＣｕ合金スパッタリングターゲット
JP4705062B2 (ja) * 2007-03-01 2011-06-22 株式会社神戸製鋼所 配線構造およびその作製方法
JP2009004518A (ja) * 2007-06-20 2009-01-08 Kobe Steel Ltd 薄膜トランジスタ基板、および表示デバイス
US20090001373A1 (en) * 2007-06-26 2009-01-01 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) Electrode of aluminum-alloy film with low contact resistance, method for production thereof, and display unit
JP2009008770A (ja) 2007-06-26 2009-01-15 Kobe Steel Ltd 積層構造およびその製造方法
JP2009010052A (ja) * 2007-06-26 2009-01-15 Kobe Steel Ltd 表示装置の製造方法
JP5143649B2 (ja) * 2007-07-24 2013-02-13 株式会社コベルコ科研 Ａｌ−Ｎｉ−Ｌａ−Ｓｉ系Ａｌ合金スパッタリングターゲットおよびその製造方法
US8702919B2 (en) * 2007-08-13 2014-04-22 Honeywell International Inc. Target designs and related methods for coupled target assemblies, methods of production and uses thereof
JP4611417B2 (ja) * 2007-12-26 2011-01-12 株式会社神戸製鋼所 反射電極、表示デバイス、および表示デバイスの製造方法
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JP5475260B2 (ja) * 2008-04-18 2014-04-16 株式会社神戸製鋼所 配線構造、薄膜トランジスタ基板およびその製造方法、並びに表示装置
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JP5584436B2 (ja) * 2008-07-03 2014-09-03 株式会社神戸製鋼所 薄膜トランジスタ基板の製造方法
JP2010065317A (ja) * 2008-08-14 2010-03-25 Kobe Steel Ltd 表示装置およびこれに用いるＣｕ合金膜
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US20110318607A1 (en) * 2009-03-02 2011-12-29 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Aluminum alloy reflective film, automobile light, illuminator, ornamentation, and aluminum alloy sputtering target
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CN103972246B (zh) 2009-07-27 2017-05-31 株式会社神户制钢所 布线结构以及具备布线结构的显示装置
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JP2012180540A (ja) 2011-02-28 2012-09-20 Kobe Steel Ltd 表示装置および半導体装置用Ａｌ合金膜
JP2012243878A (ja) * 2011-05-17 2012-12-10 Kobe Steel Ltd 半導体電極構造
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JP2013084907A (ja) * 2011-09-28 2013-05-09 Kobe Steel Ltd 表示装置用配線構造
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CN117467914B (zh) * 2023-12-25 2024-05-03 中铝材料应用研究院有限公司 一种耐应力腐蚀高强Al-Zn-Mg-Cu合金厚板及其制备方法和应用

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02274008A (ja) * 1989-04-17 1990-11-08 Hitachi Ltd 固体電子装置、その製造方法、及びそれを利用した装置
EP0521163B1 (en) * 1991-01-17 1997-05-28 Ryoka Matthey Corporation Aluminum alloy wiring layer, manufacturing thereof, and aluminum alloy sputtering target
JP2733006B2 (ja) 1993-07-27 1998-03-30 株式会社神戸製鋼所 半導体用電極及びその製造方法並びに半導体用電極膜形成用スパッタリングターゲット
JP3236480B2 (ja) * 1995-08-11 2001-12-10 トヨタ自動車株式会社 ポートホール押出が容易な高強度アルミニウム合金
JPH11258625A (ja) * 1998-03-12 1999-09-24 Toshiba Corp 表示装置用アレイ基板及びその製造方法
JP2000235961A (ja) 1999-02-16 2000-08-29 Matsushita Electric Ind Co Ltd 導電性薄膜材料及びこれを用いた薄膜トランジスタ用配線

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103548420A (zh) * 2011-05-24 2014-01-29 株式会社神户制钢所 含有有机el显示器用的反射阳极电极的配线结构
CN103548420B (zh) * 2011-05-24 2016-08-17 株式会社神户制钢所 含有有机el显示器用的反射阳极电极的配线结构

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US6791188B2 (en) 2004-09-14
TW200504231A (en) 2005-02-01

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