TWI245805B - Thin film aluminum alloy and sputtering target to form the same - Google Patents

Thin film aluminum alloy and sputtering target to form the same Download PDF

Info

Publication number
TWI245805B
TWI245805B TW091119708A TW91119708A TWI245805B TW I245805 B TWI245805 B TW I245805B TW 091119708 A TW091119708 A TW 091119708A TW 91119708 A TW91119708 A TW 91119708A TW I245805 B TWI245805 B TW I245805B
Authority
TW
Taiwan
Prior art keywords
aluminum alloy
film
thin film
alloy
hardness
Prior art date
Application number
TW091119708A
Other languages
English (en)
Chinese (zh)
Inventor
Junichiro Hagiwara
Ichiro Tokuda
Original Assignee
Ulvac Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Materials Inc filed Critical Ulvac Materials Inc
Application granted granted Critical
Publication of TWI245805B publication Critical patent/TWI245805B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53219—Aluminium alloys
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
TW091119708A 2001-08-31 2002-08-29 Thin film aluminum alloy and sputtering target to form the same TWI245805B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001263085A JP4783525B2 (ja) 2001-08-31 2001-08-31 薄膜アルミニウム合金及び薄膜アルミニウム合金形成用スパッタリングターゲット

Publications (1)

Publication Number Publication Date
TWI245805B true TWI245805B (en) 2005-12-21

Family

ID=19089896

Family Applications (2)

Application Number Title Priority Date Filing Date
TW091119708A TWI245805B (en) 2001-08-31 2002-08-29 Thin film aluminum alloy and sputtering target to form the same
TW093132008A TWI245806B (en) 2001-08-31 2002-08-29 Thin film aluminum alloy and sputtering target to form the same

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW093132008A TWI245806B (en) 2001-08-31 2002-08-29 Thin film aluminum alloy and sputtering target to form the same

Country Status (3)

Country Link
US (1) US6791188B2 (enExample)
JP (1) JP4783525B2 (enExample)
TW (2) TWI245805B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7385293B2 (en) 2004-09-27 2008-06-10 Kobe Steel, Ltd. Copper alloy, fabrication method thereof, and sputtering target
CN107768348A (zh) * 2017-09-25 2018-03-06 江苏时瑞电子科技有限公司 一种用于铜互联的导电阻挡层材料及其制备方法

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3940385B2 (ja) * 2002-12-19 2007-07-04 株式会社神戸製鋼所 表示デバイスおよびその製法
JP2006339666A (ja) * 2002-12-19 2006-12-14 Kobe Steel Ltd アルミニウム合金膜形成用スパッタリングターゲット
JP2005086118A (ja) * 2003-09-11 2005-03-31 Renesas Technology Corp 半導体装置
EP1683172B1 (en) * 2003-10-31 2007-12-26 Nxp B.V. Radio-frequency microelectromechanical systems and a method of manufacturing such systems
JP4390260B2 (ja) * 2004-02-16 2009-12-24 三井金属鉱業株式会社 高耐熱性アルミニウム合金配線材料及びターゲット材
US20060081465A1 (en) * 2004-10-19 2006-04-20 Kobelco Research Institute, Inc. Assembly for sputtering aluminum-neodymium alloys
JP4330517B2 (ja) * 2004-11-02 2009-09-16 株式会社神戸製鋼所 Ｃｕ合金薄膜およびＣｕ合金スパッタリングターゲット並びにフラットパネルディスプレイ
JP2006240289A (ja) * 2005-02-07 2006-09-14 Kobe Steel Ltd 光情報記録媒体用記録膜および光情報記録媒体ならびにスパッタリングターゲット
CN100511687C (zh) * 2005-02-17 2009-07-08 株式会社神户制钢所 显示器和用于制备该显示器的溅射靶
JP4117001B2 (ja) * 2005-02-17 2008-07-09 株式会社神戸製鋼所 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット
JP2007072427A (ja) * 2005-03-10 2007-03-22 Mitsubishi Materials Corp 耐腐食性に優れた反射板用反射膜およびこの耐腐食性に優れた反射板用反射膜を形成するためのスパッタリングターゲット
JP4621989B2 (ja) * 2005-03-10 2011-02-02 三菱マテリアル株式会社 耐腐食性に優れた反射板用反射膜およびこの耐腐食性に優れた反射板用反射膜を形成するためのスパッタリングターゲット
JP4542008B2 (ja) * 2005-06-07 2010-09-08 株式会社神戸製鋼所 表示デバイス
US7683370B2 (en) 2005-08-17 2010-03-23 Kobe Steel, Ltd. Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices
US7411298B2 (en) * 2005-08-17 2008-08-12 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices
JP4117002B2 (ja) 2005-12-02 2008-07-09 株式会社神戸製鋼所 薄膜トランジスタ基板および表示デバイス
JP4559490B2 (ja) * 2005-12-22 2010-10-06 パイオニア株式会社 光記録媒体
CN101395296B (zh) 2006-03-06 2012-03-28 陶斯摩有限公司 溅射靶
US20090022982A1 (en) * 2006-03-06 2009-01-22 Tosoh Smd, Inc. Electronic Device, Method of Manufacture of Same and Sputtering Target
US20070251819A1 (en) * 2006-05-01 2007-11-01 Kardokus Janine K Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets
US7781767B2 (en) 2006-05-31 2010-08-24 Kobe Steel, Ltd. Thin film transistor substrate and display device
JP2008098611A (ja) * 2006-09-15 2008-04-24 Kobe Steel Ltd 表示装置
JP4280277B2 (ja) * 2006-09-28 2009-06-17 株式会社神戸製鋼所 表示デバイスの製法
KR101043508B1 (ko) 2006-10-13 2011-06-23 가부시키가이샤 고베 세이코쇼 박막 트랜지스터 기판 및 표시 디바이스
JP4377906B2 (ja) * 2006-11-20 2009-12-02 株式会社コベルコ科研 Ａｌ−Ｎｉ−Ｌａ系Ａｌ基合金スパッタリングターゲット、およびその製造方法
JP2008127623A (ja) * 2006-11-20 2008-06-05 Kobelco Kaken:Kk Ａｌ基合金スパッタリングターゲットおよびその製造方法
JP4170367B2 (ja) 2006-11-30 2008-10-22 株式会社神戸製鋼所 表示デバイス用Ａｌ合金膜、表示デバイス、及びスパッタリングターゲット
JP4355743B2 (ja) * 2006-12-04 2009-11-04 株式会社神戸製鋼所 Ｃｕ合金配線膜とそのＣｕ合金配線膜を用いたフラットパネルディスプレイ用ＴＦＴ素子、及びそのＣｕ合金配線膜を作製するためのＣｕ合金スパッタリングターゲット
JP4705062B2 (ja) * 2007-03-01 2011-06-22 株式会社神戸製鋼所 配線構造およびその作製方法
JP2009004518A (ja) * 2007-06-20 2009-01-08 Kobe Steel Ltd 薄膜トランジスタ基板、および表示デバイス
US20090001373A1 (en) * 2007-06-26 2009-01-01 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) Electrode of aluminum-alloy film with low contact resistance, method for production thereof, and display unit
JP2009008770A (ja) 2007-06-26 2009-01-15 Kobe Steel Ltd 積層構造およびその製造方法
JP2009010052A (ja) * 2007-06-26 2009-01-15 Kobe Steel Ltd 表示装置の製造方法
JP5143649B2 (ja) * 2007-07-24 2013-02-13 株式会社コベルコ科研 Ａｌ−Ｎｉ−Ｌａ−Ｓｉ系Ａｌ合金スパッタリングターゲットおよびその製造方法
US8702919B2 (en) * 2007-08-13 2014-04-22 Honeywell International Inc. Target designs and related methods for coupled target assemblies, methods of production and uses thereof
JP4611417B2 (ja) * 2007-12-26 2011-01-12 株式会社神戸製鋼所 反射電極、表示デバイス、および表示デバイスの製造方法
JP4469913B2 (ja) 2008-01-16 2010-06-02 株式会社神戸製鋼所 薄膜トランジスタ基板および表示デバイス
JP5231282B2 (ja) * 2008-02-22 2013-07-10 株式会社神戸製鋼所 タッチパネルセンサー
CN101918888B (zh) * 2008-03-31 2013-07-31 株式会社神户制钢所 显示装置、其制造方法及溅射靶
JP5432550B2 (ja) * 2008-03-31 2014-03-05 株式会社コベルコ科研 Ａｌ基合金スパッタリングターゲットおよびその製造方法
JP5139134B2 (ja) * 2008-03-31 2013-02-06 株式会社コベルコ科研 Ａｌ−Ｎｉ−Ｌａ−Ｃｕ系Ａｌ基合金スパッタリングターゲットおよびその製造方法
JP5475260B2 (ja) * 2008-04-18 2014-04-16 株式会社神戸製鋼所 配線構造、薄膜トランジスタ基板およびその製造方法、並びに表示装置
JP5368867B2 (ja) * 2008-04-23 2013-12-18 株式会社神戸製鋼所 表示装置用Ａｌ合金膜、表示装置およびスパッタリングターゲット
JP5584436B2 (ja) * 2008-07-03 2014-09-03 株式会社神戸製鋼所 薄膜トランジスタ基板の製造方法
JP2010065317A (ja) * 2008-08-14 2010-03-25 Kobe Steel Ltd 表示装置およびこれに用いるＣｕ合金膜
JP4567091B1 (ja) 2009-01-16 2010-10-20 株式会社神戸製鋼所 表示装置用Ｃｕ合金膜および表示装置
US20110318607A1 (en) * 2009-03-02 2011-12-29 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Aluminum alloy reflective film, automobile light, illuminator, ornamentation, and aluminum alloy sputtering target
TW201040050A (en) * 2009-05-11 2010-11-16 Univ Nat Central Aluminum scandium alloy film for use in vehicle lamp and production method thereof
CN103972246B (zh) 2009-07-27 2017-05-31 株式会社神户制钢所 布线结构以及具备布线结构的显示装置
JP5179604B2 (ja) * 2010-02-16 2013-04-10 株式会社神戸製鋼所 表示装置用Ａｌ合金膜
JP2012180540A (ja) 2011-02-28 2012-09-20 Kobe Steel Ltd 表示装置および半導体装置用Ａｌ合金膜
JP2012243878A (ja) * 2011-05-17 2012-12-10 Kobe Steel Ltd 半導体電極構造
JP2012243877A (ja) * 2011-05-17 2012-12-10 Kobe Steel Ltd 半導体電極構造
US20140131688A1 (en) * 2011-05-24 2014-05-15 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Interconnection structure including reflective anode electrode for organic el displays
JP2013084907A (ja) * 2011-09-28 2013-05-09 Kobe Steel Ltd 表示装置用配線構造
JP5890256B2 (ja) * 2012-06-06 2016-03-22 ジオマテック株式会社 アルミニウム合金膜
JP5979034B2 (ja) * 2013-02-14 2016-08-24 三菱マテリアル株式会社 保護膜形成用スパッタリングターゲット
KR20160105490A (ko) * 2014-02-07 2016-09-06 가부시키가이샤 고베 세이코쇼 플랫 패널 디스플레이용 배선막
CN107760939A (zh) * 2017-08-31 2018-03-06 天长市良文运动器材有限公司 一种抗冲击防开裂的垒球棒及其制备方法
JP6842562B2 (ja) * 2018-06-28 2021-03-17 株式会社アルバック アルミニウム合金膜、その製造方法、及び薄膜トランジスタ
KR102571458B1 (ko) * 2018-06-28 2023-08-25 가부시키가이샤 아루박 알루미늄 합금 타깃 및 그 제조방법
CN109666829B (zh) * 2019-01-30 2021-04-30 中南大学 一种低锂含量的高强铸造铝锂铜锌合金及其制备方法
WO2021050660A1 (en) 2019-09-10 2021-03-18 Countertrace Llc Hexasubstituted benzenes, surfaces modified therewith, and associated methods
CN110714142A (zh) * 2019-11-06 2020-01-21 长沙迅洋新材料科技有限公司 一种Al-Sc-X多元合金靶材及其制备方法
CN112981353A (zh) * 2019-12-13 2021-06-18 中国科学院大连化学物理研究所 一种薄膜应力的消除方法
ES2929001T3 (es) * 2019-12-23 2022-11-24 Novelis Koblenz Gmbh Procedimiento de fabricación de un producto laminado de aleación de aluminio
CN113388765A (zh) * 2021-06-21 2021-09-14 南通众福新材料科技有限公司 一种高导电新能源车用铝合金材料及方法
JP7746835B2 (ja) * 2021-12-06 2025-10-01 株式会社デンソー 半導体装置の製造方法
KR102842601B1 (ko) * 2022-12-29 2025-08-04 고등기술연구원연구조합 알루미늄 합금 타겟 및 이의 제조방법
CN117467914B (zh) * 2023-12-25 2024-05-03 中铝材料应用研究院有限公司 一种耐应力腐蚀高强Al-Zn-Mg-Cu合金厚板及其制备方法和应用

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02274008A (ja) * 1989-04-17 1990-11-08 Hitachi Ltd 固体電子装置、その製造方法、及びそれを利用した装置
EP0521163B1 (en) * 1991-01-17 1997-05-28 Ryoka Matthey Corporation Aluminum alloy wiring layer, manufacturing thereof, and aluminum alloy sputtering target
JP2733006B2 (ja) 1993-07-27 1998-03-30 株式会社神戸製鋼所 半導体用電極及びその製造方法並びに半導体用電極膜形成用スパッタリングターゲット
JP3236480B2 (ja) * 1995-08-11 2001-12-10 トヨタ自動車株式会社 ポートホール押出が容易な高強度アルミニウム合金
JPH11258625A (ja) * 1998-03-12 1999-09-24 Toshiba Corp 表示装置用アレイ基板及びその製造方法
JP2000235961A (ja) 1999-02-16 2000-08-29 Matsushita Electric Ind Co Ltd 導電性薄膜材料及びこれを用いた薄膜トランジスタ用配線

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7385293B2 (en) 2004-09-27 2008-06-10 Kobe Steel, Ltd. Copper alloy, fabrication method thereof, and sputtering target
CN107768348A (zh) * 2017-09-25 2018-03-06 江苏时瑞电子科技有限公司 一种用于铜互联的导电阻挡层材料及其制备方法
CN107768348B (zh) * 2017-09-25 2019-07-12 江苏时恒电子科技有限公司 一种用于铜互联的导电阻挡层材料及其制备方法

Also Published As

Publication number Publication date
JP4783525B2 (ja) 2011-09-28
JP2003073810A (ja) 2003-03-12
TWI245806B (en) 2005-12-21
US20030047812A1 (en) 2003-03-13
US6791188B2 (en) 2004-09-14
TW200504231A (en) 2005-02-01

Similar Documents

Publication Publication Date Title
TWI245805B (en) Thin film aluminum alloy and sputtering target to form the same
CN112725678B (zh) 一种含NiCoCr的非等原子比中/高熵合金及其制备方法
US7740718B2 (en) Target of high-purity nickel or nickel alloy and its producing method
JP2003073810A5 (enExample)
Zhang et al. Nanocrystalline tetragonal tantalum thin films
JP4305809B2 (ja) Ａｇ合金系スパッタリングターゲット材
JP3743740B2 (ja) Ｍｏ系焼結ターゲット材
JP2005029862A (ja) 薄膜形成用スパッタリングターゲット
US9068258B2 (en) Titanium target for sputtering
CN111286703B (zh) 一种镍铂合金溅射靶材及其制备方法
TWI579243B (zh) 釕燒結體濺鍍靶及釕合金燒結體濺鍍靶
TW201915187A (zh) 濺鍍用鈦靶及其製造方法、以及含鈦薄膜的製造方法
JP5793069B2 (ja) スパッタリング用銅ターゲット材の製造方法
JP5778636B2 (ja) スパッタリング用銅ターゲット材及びスパッタリング用銅ターゲット材の製造方法
JP5330725B2 (ja) 超電導線材用基板およびその製造方法
TW475946B (en) Co-Ti alloy sputtering target and manufacturing method thereof
JP2021075749A (ja) スパッタリングターゲット
JP2019163544A (ja) スパッタリングターゲット、窒化チタン膜、配線層、および半導体素子
LU508100B1 (en) Method for preparing an iron-based resistance alloy sheet based on a rolling annealing process, the prepared iron-based resistance alloy sheet, and its applications
JP2020070469A (ja) 軟磁性合金薄帯および磁性部品
WO2006041989A2 (en) Sputtering target and method of its fabrication
CN118600282A (zh) 一种高纯度高熵铝合金溅射镀膜材料
CN118600263A (zh) 一种高纯度高熵铝合金溅射镀膜材料的生产方法
Liang et al. The Effect of Heat Treatment on the Microstructure of Co50Ni25Al8Ti8Nb3Ta3W3 High Entropy Alloy and Its High-temperature Oxidation Resistance
CN116334447A (zh) 一种含C高Nb-TiAl合金的制备方法

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent