TWI232590B - Trench Schottky barrier diode - Google Patents

Trench Schottky barrier diode Download PDF

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Publication number
TWI232590B
TWI232590B TW092118734A TW92118734A TWI232590B TW I232590 B TWI232590 B TW I232590B TW 092118734 A TW092118734 A TW 092118734A TW 92118734 A TW92118734 A TW 92118734A TW I232590 B TWI232590 B TW I232590B
Authority
TW
Taiwan
Prior art keywords
layer
trench
trenches
schottky
oxide layer
Prior art date
Application number
TW092118734A
Other languages
English (en)
Chinese (zh)
Other versions
TW200402891A (en
Inventor
Kohji Andoh
Davide Chiola
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of TW200402891A publication Critical patent/TW200402891A/zh
Application granted granted Critical
Publication of TWI232590B publication Critical patent/TWI232590B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/963—Removing process residues from vertical substrate surfaces

Landscapes

  • Electrodes Of Semiconductors (AREA)
TW092118734A 2002-07-11 2003-07-09 Trench Schottky barrier diode TWI232590B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/193,783 US6855593B2 (en) 2002-07-11 2002-07-11 Trench Schottky barrier diode

Publications (2)

Publication Number Publication Date
TW200402891A TW200402891A (en) 2004-02-16
TWI232590B true TWI232590B (en) 2005-05-11

Family

ID=30114607

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092118734A TWI232590B (en) 2002-07-11 2003-07-09 Trench Schottky barrier diode

Country Status (7)

Country Link
US (1) US6855593B2 (enExample)
EP (1) EP1543554A4 (enExample)
JP (1) JP2005532698A (enExample)
CN (1) CN1291483C (enExample)
AU (1) AU2003248823A1 (enExample)
TW (1) TWI232590B (enExample)
WO (1) WO2004008529A1 (enExample)

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Also Published As

Publication number Publication date
CN1672257A (zh) 2005-09-21
EP1543554A4 (en) 2008-05-07
EP1543554A1 (en) 2005-06-22
US6855593B2 (en) 2005-02-15
US20040007723A1 (en) 2004-01-15
TW200402891A (en) 2004-02-16
CN1291483C (zh) 2006-12-20
WO2004008529A1 (en) 2004-01-22
JP2005532698A (ja) 2005-10-27
AU2003248823A1 (en) 2004-02-02

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