CN1291483C - 沟槽肖特基势垒二极管 - Google Patents

沟槽肖特基势垒二极管 Download PDF

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Publication number
CN1291483C
CN1291483C CNB038181754A CN03818175A CN1291483C CN 1291483 C CN1291483 C CN 1291483C CN B038181754 A CNB038181754 A CN B038181754A CN 03818175 A CN03818175 A CN 03818175A CN 1291483 C CN1291483 C CN 1291483C
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CN
China
Prior art keywords
layer
groove
nitride layer
final
silicon
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Expired - Fee Related
Application number
CNB038181754A
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English (en)
Chinese (zh)
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CN1672257A (zh
Inventor
安藤浩二
达维德·基奥拉
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Infineon Technologies Americas Corp
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International Rectifier Corp USA
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Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of CN1672257A publication Critical patent/CN1672257A/zh
Application granted granted Critical
Publication of CN1291483C publication Critical patent/CN1291483C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/963—Removing process residues from vertical substrate surfaces

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  • Electrodes Of Semiconductors (AREA)
CNB038181754A 2002-07-11 2003-07-02 沟槽肖特基势垒二极管 Expired - Fee Related CN1291483C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/193,783 US6855593B2 (en) 2002-07-11 2002-07-11 Trench Schottky barrier diode
US10/193,783 2002-07-11

Publications (2)

Publication Number Publication Date
CN1672257A CN1672257A (zh) 2005-09-21
CN1291483C true CN1291483C (zh) 2006-12-20

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ID=30114607

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038181754A Expired - Fee Related CN1291483C (zh) 2002-07-11 2003-07-02 沟槽肖特基势垒二极管

Country Status (7)

Country Link
US (1) US6855593B2 (enExample)
EP (1) EP1543554A4 (enExample)
JP (1) JP2005532698A (enExample)
CN (1) CN1291483C (enExample)
AU (1) AU2003248823A1 (enExample)
TW (1) TWI232590B (enExample)
WO (1) WO2004008529A1 (enExample)

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Also Published As

Publication number Publication date
TW200402891A (en) 2004-02-16
TWI232590B (en) 2005-05-11
CN1672257A (zh) 2005-09-21
US20040007723A1 (en) 2004-01-15
EP1543554A1 (en) 2005-06-22
AU2003248823A1 (en) 2004-02-02
EP1543554A4 (en) 2008-05-07
JP2005532698A (ja) 2005-10-27
US6855593B2 (en) 2005-02-15
WO2004008529A1 (en) 2004-01-22

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Termination date: 20110702