JP2005532698A - トレンチ型ショットキ・バリア・ダイオード - Google Patents

トレンチ型ショットキ・バリア・ダイオード Download PDF

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Publication number
JP2005532698A
JP2005532698A JP2004521525A JP2004521525A JP2005532698A JP 2005532698 A JP2005532698 A JP 2005532698A JP 2004521525 A JP2004521525 A JP 2004521525A JP 2004521525 A JP2004521525 A JP 2004521525A JP 2005532698 A JP2005532698 A JP 2005532698A
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JP
Japan
Prior art keywords
trench
semiconductor device
forming
schottky barrier
manufacturing
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Pending
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JP2004521525A
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English (en)
Japanese (ja)
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JP2005532698A5 (enExample
Inventor
アンドウ コージ
チオラ ダヴィデ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
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International Rectifier Corp USA
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Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of JP2005532698A publication Critical patent/JP2005532698A/ja
Publication of JP2005532698A5 publication Critical patent/JP2005532698A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/963—Removing process residues from vertical substrate surfaces

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  • Electrodes Of Semiconductors (AREA)
JP2004521525A 2002-07-11 2003-07-02 トレンチ型ショットキ・バリア・ダイオード Pending JP2005532698A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/193,783 US6855593B2 (en) 2002-07-11 2002-07-11 Trench Schottky barrier diode
PCT/US2003/021009 WO2004008529A1 (en) 2002-07-11 2003-07-02 Trench schottky barrier diode

Publications (2)

Publication Number Publication Date
JP2005532698A true JP2005532698A (ja) 2005-10-27
JP2005532698A5 JP2005532698A5 (enExample) 2012-05-17

Family

ID=30114607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004521525A Pending JP2005532698A (ja) 2002-07-11 2003-07-02 トレンチ型ショットキ・バリア・ダイオード

Country Status (7)

Country Link
US (1) US6855593B2 (enExample)
EP (1) EP1543554A4 (enExample)
JP (1) JP2005532698A (enExample)
CN (1) CN1291483C (enExample)
AU (1) AU2003248823A1 (enExample)
TW (1) TWI232590B (enExample)
WO (1) WO2004008529A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010073871A1 (ja) * 2008-12-26 2010-07-01 日本電気株式会社 半導体装置、ショットキバリアダイオード、電子装置、および半導体装置の製造方法
JP2012028625A (ja) * 2010-07-26 2012-02-09 Shindengen Electric Mfg Co Ltd ショットキーバリアダイオード及びその製造方法

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US7323402B2 (en) * 2002-07-11 2008-01-29 International Rectifier Corporation Trench Schottky barrier diode with differential oxide thickness
US8629019B2 (en) * 2002-09-24 2014-01-14 Vishay-Siliconix Method of forming self aligned contacts for a power MOSFET
TW583748B (en) * 2003-03-28 2004-04-11 Mosel Vitelic Inc The termination structure of DMOS device
US6998694B2 (en) * 2003-08-05 2006-02-14 Shye-Lin Wu High switching speed two mask Schottky diode with high field breakdown
US7973381B2 (en) * 2003-09-08 2011-07-05 International Rectifier Corporation Thick field oxide termination for trench schottky device
KR100566303B1 (ko) * 2003-12-15 2006-03-30 주식회사 하이닉스반도체 리세스된 게이트 전극 형성 방법
FR2864345B1 (fr) * 2003-12-18 2006-03-31 St Microelectronics Sa Realisation de la peripherie d'une diode schottky a tranchees mos
US7196397B2 (en) * 2004-03-04 2007-03-27 International Rectifier Corporation Termination design with multiple spiral trench rings
US7153784B2 (en) * 2004-04-20 2006-12-26 Intel Corporation Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
FR2879024A1 (fr) * 2004-12-08 2006-06-09 St Microelectronics Sa Peripherie de composant unipolaire vertical
DE102004059640A1 (de) * 2004-12-10 2006-06-22 Robert Bosch Gmbh Halbleitereinrichtung und Verfahren zu deren Herstellung
KR100567073B1 (ko) * 2004-12-29 2006-04-04 주식회사 하이닉스반도체 피모스펫 제조방법
US7671439B2 (en) * 2005-02-11 2010-03-02 Alpha & Omega Semiconductor, Ltd. Junction barrier Schottky (JBS) with floating islands
US7737522B2 (en) * 2005-02-11 2010-06-15 Alpha & Omega Semiconductor, Ltd. Trench junction barrier controlled Schottky device with top and bottom doped regions for enhancing forward current in a vertical direction
US7583485B1 (en) 2005-07-26 2009-09-01 Vishay-Siliconix Electrostatic discharge protection circuit for integrated circuits
US9111754B2 (en) * 2005-07-26 2015-08-18 Vishay-Siliconix Floating gate structure with high electrostatic discharge performance
US7544545B2 (en) 2005-12-28 2009-06-09 Vishay-Siliconix Trench polysilicon diode
US7335927B2 (en) 2006-01-30 2008-02-26 Internatioanl Business Machines Corporation Lateral silicided diodes
US7488673B2 (en) * 2006-02-24 2009-02-10 International Rectifier Corporation Trench MOS Schottky barrier rectifier with high k gate dielectric and reduced mask process for the manufacture thereof
US7955961B2 (en) * 2006-03-07 2011-06-07 International Rectifier Corporation Process for manufacture of trench Schottky
US20070293028A1 (en) * 2006-06-16 2007-12-20 Chip Integration Tech.Co.,Ltd. Method of forming low forward voltage Shottky barrier diode with LOCOS structure therein
WO2008080570A2 (fr) 2006-12-21 2008-07-10 Complitime S.A. Oscillateur mecanique pour une piece d'horlogerie
US7741693B1 (en) 2007-11-16 2010-06-22 National Semiconductor Corporation Method for integrating trench MOS Schottky barrier devices into integrated circuits and related semiconductor devices
US10600902B2 (en) 2008-02-13 2020-03-24 Vishay SIliconix, LLC Self-repairing field effect transisitor
US20090309181A1 (en) * 2008-06-12 2009-12-17 Force Mos Technology Co. Ltd. Trench schottky with multiple epi structure
KR101753918B1 (ko) 2009-04-17 2017-07-04 시어스톤 엘엘씨 탄소 산화물을 환원시켜 고형 탄소를 제조하는 방법
US7915645B2 (en) 2009-05-28 2011-03-29 International Rectifier Corporation Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating same
CN101609801B (zh) * 2009-07-03 2011-05-25 英属维京群岛商节能元件股份有限公司 沟槽式肖特基二极管及其制作方法
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CN101882617B (zh) * 2010-06-12 2011-11-30 中国科学院上海微系统与信息技术研究所 肖特基二极管、半导体存储器及其制造工艺
CN102376568B (zh) * 2010-08-19 2015-08-05 北大方正集团有限公司 在深沟槽肖特基二极管晶圆的深沟槽内淀积多晶硅的方法
TWI497602B (zh) * 2011-02-15 2015-08-21 Tzu Hsiung Chen 溝渠式蕭基二極體及其製作方法
TWI492310B (zh) * 2012-01-17 2015-07-11 Richtek Technology Corp 溝槽蕭特基位障二極體及其製造方法
CN104284861A (zh) 2012-04-16 2015-01-14 赛尔斯通股份有限公司 处理含有碳氧化物的废气的方法
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JP6328611B2 (ja) 2012-04-16 2018-05-23 シーアストーン リミテッド ライアビリティ カンパニー 非鉄触媒で炭素酸化物を還元するための方法および構造
US9896341B2 (en) 2012-04-23 2018-02-20 Seerstone Llc Methods of forming carbon nanotubes having a bimodal size distribution
US10815124B2 (en) 2012-07-12 2020-10-27 Seerstone Llc Solid carbon products comprising carbon nanotubes and methods of forming same
CN107651667A (zh) 2012-07-12 2018-02-02 赛尔斯通股份有限公司 包含碳纳米管的固体碳产物以及其形成方法
WO2014011206A1 (en) 2012-07-13 2014-01-16 Seerstone Llc Methods and systems for forming ammonia and solid carbon products
US9779845B2 (en) 2012-07-18 2017-10-03 Seerstone Llc Primary voltaic sources including nanofiber Schottky barrier arrays and methods of forming same
TWI521693B (zh) 2012-11-27 2016-02-11 財團法人工業技術研究院 蕭基能障二極體及其製造方法
CN104936893A (zh) 2012-11-29 2015-09-23 赛尔斯通股份有限公司 用于产生固体碳材料的反应器和方法
CN103022137A (zh) * 2012-12-27 2013-04-03 淄博美林电子有限公司 一种高效率肖特基芯片
US9586823B2 (en) 2013-03-15 2017-03-07 Seerstone Llc Systems for producing solid carbon by reducing carbon oxides
WO2014151144A1 (en) 2013-03-15 2014-09-25 Seerstone Llc Carbon oxide reduction with intermetallic and carbide catalysts
CN104183483B (zh) * 2013-05-20 2017-06-06 上海华虹宏力半导体制造有限公司 沟槽型肖特基二极管的制备方法
CN104835734A (zh) * 2014-02-10 2015-08-12 北大方正集团有限公司 肖特基二极管的制造方法
EP2991104A3 (en) 2014-08-29 2016-03-09 International Rectifier Corporation Monolithic integrated composite group iii-v and group iv semiconductor device and ic
CN105720109A (zh) * 2014-12-05 2016-06-29 无锡华润上华半导体有限公司 一种沟槽型肖特基势垒二极管及其制备方法
US10431699B2 (en) 2015-03-06 2019-10-01 Semiconductor Components Industries, Llc Trench semiconductor device having multiple active trench depths and method
US9716187B2 (en) 2015-03-06 2017-07-25 Semiconductor Components Industries, Llc Trench semiconductor device having multiple trench depths and method
CN105161417B (zh) * 2015-08-31 2019-01-04 上海华虹宏力半导体制造有限公司 肖特基二极管工艺方法
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010073871A1 (ja) * 2008-12-26 2010-07-01 日本電気株式会社 半導体装置、ショットキバリアダイオード、電子装置、および半導体装置の製造方法
JP5374520B2 (ja) * 2008-12-26 2013-12-25 ルネサスエレクトロニクス株式会社 半導体装置、ショットキバリアダイオード、電子装置、および半導体装置の製造方法
US8772785B2 (en) 2008-12-26 2014-07-08 Renesas Electronics Corporation Semiconductor device, schottky barrier diode, electronic apparatus, and method of producing semiconductor device
JP2012028625A (ja) * 2010-07-26 2012-02-09 Shindengen Electric Mfg Co Ltd ショットキーバリアダイオード及びその製造方法

Also Published As

Publication number Publication date
CN1672257A (zh) 2005-09-21
EP1543554A4 (en) 2008-05-07
EP1543554A1 (en) 2005-06-22
US6855593B2 (en) 2005-02-15
US20040007723A1 (en) 2004-01-15
TW200402891A (en) 2004-02-16
CN1291483C (zh) 2006-12-20
WO2004008529A1 (en) 2004-01-22
TWI232590B (en) 2005-05-11
AU2003248823A1 (en) 2004-02-02

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