JP2005532698A5 - - Google Patents
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- Publication number
- JP2005532698A5 JP2005532698A5 JP2004521525A JP2004521525A JP2005532698A5 JP 2005532698 A5 JP2005532698 A5 JP 2005532698A5 JP 2004521525 A JP2004521525 A JP 2004521525A JP 2004521525 A JP2004521525 A JP 2004521525A JP 2005532698 A5 JP2005532698 A5 JP 2005532698A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor device
- trenches
- spaced apart
- schottky barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 31
- 239000000758 substrate Substances 0.000 claims 26
- 230000004888 barrier function Effects 0.000 claims 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 16
- 229920005591 polysilicon Polymers 0.000 claims 16
- 239000010408 film Substances 0.000 claims 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 14
- 238000004519 manufacturing process Methods 0.000 claims 14
- 229910052710 silicon Inorganic materials 0.000 claims 14
- 239000010703 silicon Substances 0.000 claims 14
- 229910052751 metal Inorganic materials 0.000 claims 12
- 239000002184 metal Substances 0.000 claims 12
- 150000004767 nitrides Chemical class 0.000 claims 11
- 238000005530 etching Methods 0.000 claims 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 239000004020 conductor Substances 0.000 claims 6
- 238000000034 method Methods 0.000 claims 5
- 239000012535 impurity Substances 0.000 claims 3
- 235000012239 silicon dioxide Nutrition 0.000 claims 3
- 239000000377 silicon dioxide Substances 0.000 claims 3
- 239000010409 thin film Substances 0.000 claims 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- -1 boron ions Chemical class 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 238000005192 partition Methods 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 1
- 210000003323 beak Anatomy 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/193,783 US6855593B2 (en) | 2002-07-11 | 2002-07-11 | Trench Schottky barrier diode |
| PCT/US2003/021009 WO2004008529A1 (en) | 2002-07-11 | 2003-07-02 | Trench schottky barrier diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005532698A JP2005532698A (ja) | 2005-10-27 |
| JP2005532698A5 true JP2005532698A5 (enExample) | 2012-05-17 |
Family
ID=30114607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004521525A Pending JP2005532698A (ja) | 2002-07-11 | 2003-07-02 | トレンチ型ショットキ・バリア・ダイオード |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6855593B2 (enExample) |
| EP (1) | EP1543554A4 (enExample) |
| JP (1) | JP2005532698A (enExample) |
| CN (1) | CN1291483C (enExample) |
| AU (1) | AU2003248823A1 (enExample) |
| TW (1) | TWI232590B (enExample) |
| WO (1) | WO2004008529A1 (enExample) |
Families Citing this family (64)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7323402B2 (en) * | 2002-07-11 | 2008-01-29 | International Rectifier Corporation | Trench Schottky barrier diode with differential oxide thickness |
| US8629019B2 (en) * | 2002-09-24 | 2014-01-14 | Vishay-Siliconix | Method of forming self aligned contacts for a power MOSFET |
| TW583748B (en) * | 2003-03-28 | 2004-04-11 | Mosel Vitelic Inc | The termination structure of DMOS device |
| US6998694B2 (en) * | 2003-08-05 | 2006-02-14 | Shye-Lin Wu | High switching speed two mask Schottky diode with high field breakdown |
| US7973381B2 (en) * | 2003-09-08 | 2011-07-05 | International Rectifier Corporation | Thick field oxide termination for trench schottky device |
| KR100566303B1 (ko) * | 2003-12-15 | 2006-03-30 | 주식회사 하이닉스반도체 | 리세스된 게이트 전극 형성 방법 |
| FR2864345B1 (fr) * | 2003-12-18 | 2006-03-31 | St Microelectronics Sa | Realisation de la peripherie d'une diode schottky a tranchees mos |
| US7196397B2 (en) * | 2004-03-04 | 2007-03-27 | International Rectifier Corporation | Termination design with multiple spiral trench rings |
| US7153784B2 (en) * | 2004-04-20 | 2006-12-26 | Intel Corporation | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode |
| FR2879024A1 (fr) * | 2004-12-08 | 2006-06-09 | St Microelectronics Sa | Peripherie de composant unipolaire vertical |
| DE102004059640A1 (de) * | 2004-12-10 | 2006-06-22 | Robert Bosch Gmbh | Halbleitereinrichtung und Verfahren zu deren Herstellung |
| KR100567073B1 (ko) * | 2004-12-29 | 2006-04-04 | 주식회사 하이닉스반도체 | 피모스펫 제조방법 |
| US7737522B2 (en) * | 2005-02-11 | 2010-06-15 | Alpha & Omega Semiconductor, Ltd. | Trench junction barrier controlled Schottky device with top and bottom doped regions for enhancing forward current in a vertical direction |
| US7671439B2 (en) * | 2005-02-11 | 2010-03-02 | Alpha & Omega Semiconductor, Ltd. | Junction barrier Schottky (JBS) with floating islands |
| US9111754B2 (en) * | 2005-07-26 | 2015-08-18 | Vishay-Siliconix | Floating gate structure with high electrostatic discharge performance |
| US7583485B1 (en) | 2005-07-26 | 2009-09-01 | Vishay-Siliconix | Electrostatic discharge protection circuit for integrated circuits |
| US7544545B2 (en) | 2005-12-28 | 2009-06-09 | Vishay-Siliconix | Trench polysilicon diode |
| US7335927B2 (en) | 2006-01-30 | 2008-02-26 | Internatioanl Business Machines Corporation | Lateral silicided diodes |
| US7488673B2 (en) * | 2006-02-24 | 2009-02-10 | International Rectifier Corporation | Trench MOS Schottky barrier rectifier with high k gate dielectric and reduced mask process for the manufacture thereof |
| US7955961B2 (en) * | 2006-03-07 | 2011-06-07 | International Rectifier Corporation | Process for manufacture of trench Schottky |
| US20070293028A1 (en) * | 2006-06-16 | 2007-12-20 | Chip Integration Tech.Co.,Ltd. | Method of forming low forward voltage Shottky barrier diode with LOCOS structure therein |
| JP2010513886A (ja) | 2006-12-21 | 2010-04-30 | コンプリタイム エスアー | 時計用メカニカル振動子 |
| US7741693B1 (en) | 2007-11-16 | 2010-06-22 | National Semiconductor Corporation | Method for integrating trench MOS Schottky barrier devices into integrated circuits and related semiconductor devices |
| US10600902B2 (en) | 2008-02-13 | 2020-03-24 | Vishay SIliconix, LLC | Self-repairing field effect transisitor |
| US20090309181A1 (en) * | 2008-06-12 | 2009-12-17 | Force Mos Technology Co. Ltd. | Trench schottky with multiple epi structure |
| WO2010073871A1 (ja) * | 2008-12-26 | 2010-07-01 | 日本電気株式会社 | 半導体装置、ショットキバリアダイオード、電子装置、および半導体装置の製造方法 |
| NZ595714A (en) | 2009-04-17 | 2014-08-29 | Seerstone Llc | Method for producing solid carbon by reducing carbon oxides |
| US7915645B2 (en) | 2009-05-28 | 2011-03-29 | International Rectifier Corporation | Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating same |
| CN101609801B (zh) * | 2009-07-03 | 2011-05-25 | 英属维京群岛商节能元件股份有限公司 | 沟槽式肖特基二极管及其制作方法 |
| US9230810B2 (en) | 2009-09-03 | 2016-01-05 | Vishay-Siliconix | System and method for substrate wafer back side and edge cross section seals |
| CN101882617B (zh) * | 2010-06-12 | 2011-11-30 | 中国科学院上海微系统与信息技术研究所 | 肖特基二极管、半导体存储器及其制造工艺 |
| JP5674366B2 (ja) * | 2010-07-26 | 2015-02-25 | 新電元工業株式会社 | ショットキーバリアダイオード及びその製造方法 |
| CN102376568B (zh) * | 2010-08-19 | 2015-08-05 | 北大方正集团有限公司 | 在深沟槽肖特基二极管晶圆的深沟槽内淀积多晶硅的方法 |
| TWI497602B (zh) * | 2011-02-15 | 2015-08-21 | Tzu Hsiung Chen | 溝渠式蕭基二極體及其製作方法 |
| TWI492310B (zh) * | 2012-01-17 | 2015-07-11 | Richtek Technology Corp | 溝槽蕭特基位障二極體及其製造方法 |
| US9475699B2 (en) | 2012-04-16 | 2016-10-25 | Seerstone Llc. | Methods for treating an offgas containing carbon oxides |
| NO2749379T3 (enExample) | 2012-04-16 | 2018-07-28 | ||
| WO2013158160A1 (en) | 2012-04-16 | 2013-10-24 | Seerstone Llc | Method for producing solid carbon by reducing carbon dioxide |
| EP2838838A4 (en) | 2012-04-16 | 2015-10-21 | Seerstone Llc | METHOD AND SYSTEMS FOR DETECTING AND SEQUESTRATING CARBON AND REDUCING THE MASS OF CARBOX OXIDES IN A GAS FLOW |
| US9796591B2 (en) | 2012-04-16 | 2017-10-24 | Seerstone Llc | Methods for reducing carbon oxides with non ferrous catalysts and forming solid carbon products |
| US9896341B2 (en) | 2012-04-23 | 2018-02-20 | Seerstone Llc | Methods of forming carbon nanotubes having a bimodal size distribution |
| US10815124B2 (en) | 2012-07-12 | 2020-10-27 | Seerstone Llc | Solid carbon products comprising carbon nanotubes and methods of forming same |
| CN107651667A (zh) | 2012-07-12 | 2018-02-02 | 赛尔斯通股份有限公司 | 包含碳纳米管的固体碳产物以及其形成方法 |
| MX2015000580A (es) | 2012-07-13 | 2015-08-20 | Seerstone Llc | Metodos y sistemas para formar productos de carbono solido y amoniaco. |
| US9779845B2 (en) | 2012-07-18 | 2017-10-03 | Seerstone Llc | Primary voltaic sources including nanofiber Schottky barrier arrays and methods of forming same |
| TWI521693B (zh) | 2012-11-27 | 2016-02-11 | 財團法人工業技術研究院 | 蕭基能障二極體及其製造方法 |
| JP6389824B2 (ja) | 2012-11-29 | 2018-09-12 | シーアストーン リミテッド ライアビリティ カンパニー | 固体炭素材料を製造するための反応器および方法 |
| CN103022137A (zh) * | 2012-12-27 | 2013-04-03 | 淄博美林电子有限公司 | 一种高效率肖特基芯片 |
| WO2014151144A1 (en) | 2013-03-15 | 2014-09-25 | Seerstone Llc | Carbon oxide reduction with intermetallic and carbide catalysts |
| EP3129133B1 (en) | 2013-03-15 | 2024-10-09 | Seerstone LLC | Systems for producing solid carbon by reducing carbon oxides |
| CN104183483B (zh) * | 2013-05-20 | 2017-06-06 | 上海华虹宏力半导体制造有限公司 | 沟槽型肖特基二极管的制备方法 |
| CN104835734A (zh) * | 2014-02-10 | 2015-08-12 | 北大方正集团有限公司 | 肖特基二极管的制造方法 |
| EP2991104A3 (en) | 2014-08-29 | 2016-03-09 | International Rectifier Corporation | Monolithic integrated composite group iii-v and group iv semiconductor device and ic |
| CN105720109A (zh) * | 2014-12-05 | 2016-06-29 | 无锡华润上华半导体有限公司 | 一种沟槽型肖特基势垒二极管及其制备方法 |
| US10431699B2 (en) | 2015-03-06 | 2019-10-01 | Semiconductor Components Industries, Llc | Trench semiconductor device having multiple active trench depths and method |
| US9716187B2 (en) | 2015-03-06 | 2017-07-25 | Semiconductor Components Industries, Llc | Trench semiconductor device having multiple trench depths and method |
| CN105161417B (zh) * | 2015-08-31 | 2019-01-04 | 上海华虹宏力半导体制造有限公司 | 肖特基二极管工艺方法 |
| DE102016100794B4 (de) * | 2016-01-19 | 2019-03-28 | Harting Electric Gmbh & Co. Kg | Halterahmen mit Führungselement für Steckverbindermodule und System bestehend aus zwei dieser Halterahmen |
| WO2018022999A1 (en) | 2016-07-28 | 2018-02-01 | Seerstone Llc. | Solid carbon products comprising compressed carbon nanotubes in a container and methods of forming same |
| CN106328718B (zh) * | 2016-11-04 | 2024-06-25 | 南京涟沫动漫文化传播有限公司 | 一种台面二极管 |
| US10388801B1 (en) * | 2018-01-30 | 2019-08-20 | Semiconductor Components Industries, Llc | Trench semiconductor device having shaped gate dielectric and gate electrode structures and method |
| US10439075B1 (en) | 2018-06-27 | 2019-10-08 | Semiconductor Components Industries, Llc | Termination structure for insulated gate semiconductor device and method |
| US10566466B2 (en) | 2018-06-27 | 2020-02-18 | Semiconductor Components Industries, Llc | Termination structure for insulated gate semiconductor device and method |
| CN110634730B (zh) * | 2019-09-27 | 2021-08-13 | 扬州扬杰电子科技股份有限公司 | 一种沟槽肖特基多晶硅沉积后栅氧中断返工方法 |
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|---|---|---|---|---|
| US3363153A (en) | 1965-06-01 | 1968-01-09 | Gen Telephone & Elect | Solid state triode having gate electrode therein subtending a portion of the source electrode |
| US4219835A (en) | 1978-02-17 | 1980-08-26 | Siliconix, Inc. | VMOS Mesa structure and manufacturing process |
| US4647957A (en) * | 1983-10-11 | 1987-03-03 | At&T Bell Laboratories | Latchup-preventing CMOS device |
| GB2151844A (en) | 1983-12-20 | 1985-07-24 | Philips Electronic Associated | Semiconductor devices |
| JPS6281040A (ja) * | 1985-10-04 | 1987-04-14 | Oki Electric Ind Co Ltd | 素子分離領域の形成方法 |
| US5082795A (en) * | 1986-12-05 | 1992-01-21 | General Electric Company | Method of fabricating a field effect semiconductor device having a self-aligned structure |
| JPS63299365A (ja) * | 1987-05-29 | 1988-12-06 | Seiko Instr & Electronics Ltd | 半導体装置の製造方法 |
| US4994883A (en) | 1989-10-02 | 1991-02-19 | General Electric Company | Field controlled diode (FCD) having MOS trench gates |
| JPH05283518A (ja) * | 1992-04-06 | 1993-10-29 | Toshiba Corp | 半導体装置の製造方法 |
| US5365102A (en) | 1993-07-06 | 1994-11-15 | North Carolina State University | Schottky barrier rectifier with MOS trench |
| US6078090A (en) * | 1997-04-02 | 2000-06-20 | Siliconix Incorporated | Trench-gated Schottky diode with integral clamping diode |
| US6049108A (en) * | 1995-06-02 | 2000-04-11 | Siliconix Incorporated | Trench-gated MOSFET with bidirectional voltage clamping |
| US5612567A (en) | 1996-05-13 | 1997-03-18 | North Carolina State University | Schottky barrier rectifiers and methods of forming same |
| US6130602A (en) * | 1996-05-13 | 2000-10-10 | Micron Technology, Inc. | Radio frequency data communications device |
| GB9929613D0 (en) * | 1999-12-15 | 2000-02-09 | Koninkl Philips Electronics Nv | Manufacture of semiconductor material and devices using that material |
| GB0002235D0 (en) | 2000-02-02 | 2000-03-22 | Koninkl Philips Electronics Nv | Trenched schottky rectifiers |
| DE10007847A1 (de) * | 2000-02-21 | 2001-08-23 | Zahnradfabrik Friedrichshafen | Elektromagnetische Schalteinrichtung |
| JP3691736B2 (ja) * | 2000-07-31 | 2005-09-07 | 新電元工業株式会社 | 半導体装置 |
| US6309929B1 (en) * | 2000-09-22 | 2001-10-30 | Industrial Technology Research Institute And Genetal Semiconductor Of Taiwan, Ltd. | Method of forming trench MOS device and termination structure |
| US6396090B1 (en) * | 2000-09-22 | 2002-05-28 | Industrial Technology Research Institute | Trench MOS device and termination structure |
| US6541312B2 (en) * | 2000-12-22 | 2003-04-01 | Matrix Semiconductor, Inc. | Formation of antifuse structure in a three dimensional memory |
-
2002
- 2002-07-11 US US10/193,783 patent/US6855593B2/en not_active Expired - Lifetime
-
2003
- 2003-07-02 JP JP2004521525A patent/JP2005532698A/ja active Pending
- 2003-07-02 AU AU2003248823A patent/AU2003248823A1/en not_active Abandoned
- 2003-07-02 WO PCT/US2003/021009 patent/WO2004008529A1/en not_active Ceased
- 2003-07-02 EP EP03764347A patent/EP1543554A4/en not_active Withdrawn
- 2003-07-02 CN CNB038181754A patent/CN1291483C/zh not_active Expired - Fee Related
- 2003-07-09 TW TW092118734A patent/TWI232590B/zh not_active IP Right Cessation
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