TW493240B - Semiconductor device manufacturing method - Google Patents

Semiconductor device manufacturing method Download PDF

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Publication number
TW493240B
TW493240B TW089106690A TW89106690A TW493240B TW 493240 B TW493240 B TW 493240B TW 089106690 A TW089106690 A TW 089106690A TW 89106690 A TW89106690 A TW 89106690A TW 493240 B TW493240 B TW 493240B
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TW
Taiwan
Prior art keywords
insulating film
forming
opening
porous
nitrogen
Prior art date
Application number
TW089106690A
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English (en)
Inventor
Tomomi Suzuki
Hiroshi Ikakura
Kazuo Maeda
Yoshimi Shiotani
Koichi Ohira
Original Assignee
Canon Sales Co Inc
Semiconductor Process Lab Co
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Publication date
Application filed by Canon Sales Co Inc, Semiconductor Process Lab Co filed Critical Canon Sales Co Inc
Application granted granted Critical
Publication of TW493240B publication Critical patent/TW493240B/zh

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    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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月 _ __n 曰 五、發明說明Q) 發明領域 本發明係有關於一 在低介雷縈奴種牛等體裝置的製造方法，、 習4社 數之層間絕緣膜内形成介声节七4立 、用於 習知技術描述 〜力乂 ；丨層洞或接觸窗。 近幾年來，依照漸高人 J置的度，資料傳輸“增：體， ;;::r轉換成低阻抗的鋼 ^ ^ ,考慮•配線周圍的層間絕緣膜，右你人你束 :被要求來取代傳統的二氧化矽膜(介電有數的 如，現在可以形成介電當 承數4· 0)。例 膜。 成,電吊數小於2·0的多孔性二氧化矽 =访以習知技術形成的多孔性二氧化 程序會吸收水氣、结果，有介J常=膜形成後的清洗 特別疋指，假如形成接觸窗或介層洞後，有時走* 透過開口部側壁被吸收，例如接觸窗等。 有夺尺乳會 声的氣穿透到層間絕緣骐而造成層間配線 僧的钕餘的另一個問題。 冰 發明概述 ^發明的目的在提供-種半導體裝置的製造方法，即 在形成低介電常數之層間絕緣膜及在層間絕緣膜内形 =:層洞或接觸窗日夺，亦可藉著抑制層間絕緣膜之水氣吸 收來防止層間絕緣膜介電常數的增加。 在依本發明的半導體裝置的製造方法，層間絕緣膜包 括多層結構使得多孔性絕緣膜形成於由含氮絕緣膜所組成 2060-3128-pfl.ptc 第5頁 493240 修正 案號 89106690__年 $ a 一發明說明（2) =下層絕緣膜上，或在任一由含3丨〇(：絕緣膜，含以〇(：11絕 :膜，以及含Si OCHN絕緣膜所組成的下層絕緣膜上，然後 開口部形成在層間絕緣膜上。 夕孔性絕緣膜因為具有低介電常數，所以很適合於層 =絕緣膜，然，假如多孔性絕緣膜直接形成在配線上等 因為具有而水氣穿透特性，配線的侵蝕容易發生。在 二發明由含氮絕緣膜所組成的下層絕緣膜，或 緣膜所’ ^SiGC：H絕緣膜’以及含⑽㈣絕 免。孔穿透被下層絕緣膜抑制，配線等的侵蝕可以避 緣膜露= 媒形广部的：驟後，*氣絕 氣體電漿接觸，开彡忠;軋，氮軋，以及氧化氮氣體任一 面上。 /成在多孔性絕緣膜表面及開口部的内表 蓋，S可ίϋ::;邑緣膜的整個表面被含氮絕緣膜覆 而且在夕艾抑制水氣穿透到層間絕緣膜。 暴露在碳氫化：：,Λ緣膜形成開口部的步驟後，開口部 碳氫化合物層，例^Hy)電聚。因此，含碳氣化合物的 括開口部内表® (牲J丨烷’所組成的覆蓋絕緣骐形成在包 可以增進水氣的抑面）的多孔性絕緣膜表面， 圖式簡單說明 第1A圖到第ip 裝置的製造，:丨=示依本發明第-實施例的半導體 2060-3128-pfl.ptc 第6頁 493240 案號89106690_年月日 修正_ 五、發明說明（3) 第2 A圖到第2F圖係顯示依本發明第二實施例的半導體 裝置的製造方法的剖面圖；以及 第3圖係顯示依本發明第三實施例的半導體裝置的製 造方法的剖面圖。 [符號說明] 1〜碎基底； 2〜氮化矽膜j 3〜SiOCH 膜； 3a、13、13a、24a〜層間絕緣膜； 4、 4a〜含氮絕緣膜； 5、 1 4〜光阻膜； 7、7a、7b、15、16、16a、16b、26〜開 口部； 11〜晶圓， 1 2、2 1、2 3〜下層絕緣膜； 1 7〜含Cx Hy之碳氫化合物絕緣膜； 2 2〜内層配線； 22a〜鋁膜； 22b〜鈦膜； 2 5〜覆蓋絕緣膜。 較佳實施例說明 本發明實施例將參考下文中的附圖加以解釋。 (第一實施例） 第1 A圖到第1 G圖係顯示依本發明第一實施例的半導體
2060-3128-pfl.ptc 第7頁 493240
裝置的製造方法的剖面圖。 首先，矽基板1被置入可降壓反應室内，然後矽基板i 被放在一般做為平行板狀電極的下電極的基板承座上，然 後加熱至300 °c。在維持此溫度同時將流率約5〇 SCCM的矽 烷（Sil^)與流率約250 SCCM的氨氣混合氣體通入反應室 内，反應室内氣壓設定在〇. 5 Tor r。 然後頻率400仟赫兹（Hz)、功率1〇〇瓦（w)的電力 施加在支撐矽基·板1的下電極上，頻率1356百萬赫茲、功 率50的瓦電力施加在相對於下電極的上電極上。因此，矽 烷與氨氣（NHS )的混合氣體被電漿化。在維持此狀況同 時二顯示在第1 A圖中，氮化矽膜（含氮絕緣膜）2藉著化 學氣相沉積法形成在矽基板丨上。氮化矽膜2代表僅由矽 (S i )與氮（N )組成的絕緣膜。 氮氧化矽（SiON)膜被用來代替氮化矽（SiN)膜2。 如果氮氧化矽膜形成，一氧化二氮（N2〇)氣體被進一步 加入矽烷與氨氣的混合氣體中。一氧化二氮流率被設定成 20 SCCM，例如，假如矽烷流率被設定成約5〇 SC(：M而氨 流率被設定成約250 SCCM。 然後加熱矽基板1到3〇〇。〇並將流率約50 3(：(^的扎 hSiOSi (CH3)3與流率約25 SCCM的氧氣混合氣體通入乂 應室内，氣壓設定在2 Torr。然後，頻率4〇〇仟赫茲、功 率1〇〇瓦的電力施加在下電極上，頻率1 3 56百萬赫茲、功 率50瓦^的電力施加上電極上。於是，（CIj3 )3Si〇si )3與氧被電漿化。在維持此狀況同時，顯示在第丨β圖3 中’約400奈米厚的以0(：11膜3藉著電漿化學氣相沉積法形 493240 ------裝號 89撤咖_年月曰_修正 五、發明說明（5) 成在氮化矽膜2上。si 〇CH膜3代表僅由矽（Si)，氧（0 )’碳（C )，以及氫（η )所組成的絕緣膜。 然後’在矽基板1被加熱到4〇〇 °c情況下，流率約25 SCCM的氧氣被通入反應室，同時氣壓設定在〇· 4 Torr。然 後’頻率400仟赫茲、功率丨〇〇瓦的電力施加在下電極上， 氧被電聚化。假如此情況持續，Si 〇CH膜3中的碳與後來的 氧彼此反應在Si 0CH膜3而形成空隙，所以有許多空隙的
Sl0CH膜3於焉形成。如下述，有時有許多空隙的SiOCH膜3 被稱為多孔性S i 〇CH膜。 然後’在矽基板1被加熱到4〇〇艺情況下，流率約25 SCCM的氨氣被通入反應室，同時氣壓設定在〇· 4 T〇rr。然 後’頻率400仟赫茲、功率1〇〇瓦的電力施加在下電極上。 因此’如第1C圖所示，氨氣被電漿化。含氮絕緣膜（覆蓋 絕緣膜）4藉著維持此狀況形成在Si〇CH膜3的表面層。氮 化矽膜2，SiOCH膜3，以及含氮絕緣膜4組成猶如一整個層 間絕緣膜3a。如下述，有時包括多孔性SiOCH膜的層間絕 緣膜被稱為多孔性層間絕緣膜。 接著’光阻膜5形成在多孔性層間絕緣膜3a上，然後 光阻膜5的開口部6形成在一區域，此係層間絕緣膜3 &的接 觸窗藉由圖案化光阻膜5形成其上的區域。 接著’如第1D圖所示，藉著使用d 混合氣體的電漿蝕刻法，開口部以透過光阻膜5的開口部 6，形成在多孔性層間絕緣膜3a其中的含氮絕 ° 性層間絕緣膜3内。 d及夕孔
493240 -案號89106690 年月 日 你不___ 五、發明說明（6) " " ' ----- 法去除，然後光阻膜5的殘餘被以化學製程去除。 接著，如第1F圖所示，流率約4〇〇 SCCM的氨被導入 應室，同時氣壓被設定在0· 2 Torr。然後，頻率4〇〇 $ & 茲、功率300瓦的電力施加在下電極上。因此，氨氣被 漿化。假如此情況持續，如第1 F圖所示，含氮絕緣膜（ 蓋絕緣膜）4 ’ 4a形成在包含開口部7a内壁的層間絕緣媒I 3a的表面層。含氮絕緣膜4，4a可以用氮取代氨在相條 件下形成。# ^ 接著，如第1G圖所示，露出開口部7&底部的氮化矽膜 2被以使用乳’氧，CF4混合氣體的非等向性餘刻法去除以、 形成開口部7b。因此，矽基板1透空於新開口部7的底部。 在此之後，配線金屬膜（未顯示）形成，且上配線芦 藉著圖案化配線金屬膜而形成。 日 如上所述，依第一實施例，多孔性層間絕緣膜3a中多 孔性Si 0CH膜3分別被含氮絕緣膜4以及由氮化矽膜組成的
下層絕緣膜2夹心而形成，然後開口部7形成在多孔性声 絕緣膜3 a内。 曰B 亦即，由氮化矽膜組成的下層絕緣膜2設置於多孔性
Si0CH膜3下方。於是，水氣的穿透可以藉著下層絕緣膜2 來減緩’因此，可以避免水氣穿透到多孔性層間絕緣膜3 内層區，。因而，例如，可以避免内層配線等侵蝕。 接著，如第1 E圖所示，在多孔性層間絕緣膜仏内形成 開口部7a的步驟後，^化石夕膜4，4a藉著個別露出表面與 氨氣氣體電裝接觸’形成在多孔性層間絕緣膜仏與開口部 7a的内表面上。
493240 皇號 8910fifiQf) 五、發明說明（7) 於疋，包括開口部7a的多孔性層間絕緣膜3a的整個 面被氮化矽膜4 ,4a覆蓋，因此，穿透到多孔性層間絕 膜3 a以及更深層區域的水氣可因此而更進一步抑制。 如上所述，由於可以達到改善多孔性層間絕緣膜仏 水氣阻擋，所以可獲得上下配線電極間良好的接觸阻抗 等，而無需降低介電常數。結果，本發明可以作為形成高 速邏輯半導體積體電路中多孔性層間絕緣膜仏的接觸窗= 有效方法’以及JI層間絕緣膜的介電常數較低而在較高速 運作速度上有非常不錯的效果。 (第二實施例） 第2A圖到第2F圖係顯示依本發明第二實施例的半導體 裝置的製造方法的剖面圖。 不同於第一實施例的是，Si0CH膜被用來取代氮化矽 作為下層絕緣膜12以及含CxHy例如CH3的碳氫化合物層（赛’ 氫化合物絕緣膜；覆蓋絕緣膜）1 7形成在含開口部1 6 a内 壁的多孔性層間絕緣膜丨3表面層。製造方法解說如下。 首先’晶圓11被載入可降壓反應室内，然後晶圓丨丨被 放在一般做為平行板狀電極的下電極的基板承座上，然後 加熱至300 °C。假設矽基板從晶圓表面顯現出來。 在維持基板加熱溫度同時通入流率約5〇 SCCM的（CH3 )sSiOSi (CH3 ) 3與流率約25 SCCM的氧氣，氣壓設定在2 Torr 〇 然後，頻率400仟赫茲、功率1〇〇瓦的電力施加在下電 極上’頻率13· 56百萬赫茲、功率50瓦的電力施加在相對 於下電極的上電極上。你且，rriLks彳、溆氨
493240
被電漿化。在維持此狀況同時，顯示在第2 a圖中，約2〇奈 米厚的SiOCH膜12藉著電漿化學氣相沉積法形成在晶圓"1*' 的矽基板上。SiOCH膜12代表僅由矽，氧，碳，以及氣所 組成的絕緣膜。 然後加熱晶圓11到30 0 °c同時將流率約50 SCCM的 (CHdeiOSi (CH3)3與流率約25 SCCM的氧氣混合氣體通 入反應室内，氣壓設定在2 To rr。然後，頻率4〇〇仟赫 炫、功率100瓦的電力施加在下電極上，頻率13.56百萬赫 兹、功率5 0瓦的電力施加面對下電極的上電極上。結果， (CH3 ) gSiOSi ( CH3 ) 3與氧被電漿化。在維持此狀況同 時’顯示在第2B圖中，約400奈米厚的SiOCH膜13藉著電聚 化學氣相沉積法形成在SiOCH膜12上。 ’ 接著，光阻膜14形成在SiOCH膜13上，然後光阻膜14 的開口部15形成在一區域，此係SiOCH膜13的接觸窗藉由 圖案化光阻膜14形成其上的區域。接著，如第2C圖所示， 藉著使用CHFS，以及氧的混合氣體的電漿蝕刻法，開口部 16a透過光阻膜14的開口部15，形成在。0(：11膜13内。 接著，光阻膜1 4被以使用氧氣的蝕刻法去除，然後光 阻膜1 4的殘餘被以化學製程去除。 然後’在晶圓11被加熱到4 0 0。〇同時，流率約2 5 S C C Μ 的氧氣被通入反應室，氣壓設定在〇· 4T〇rr。然後，頻率 400仟赫茲、功率1〇〇瓦的電力施加在下電極上。於是，氧 被電衆化。如第2D圖所示，假如此情況持續，s i 〇ch膜1 3 中的碳與後來的氧彼此反應而去除碳，所以許多空隙形成 在膜中。於是，多孔性SiOCH膜13於焉形成。
2060-3128-pfl.ptc 第12頁 493240 修正 曰 案號 89106690 五、發明說明（9) 然後，如第2E圖所示，晶圓丨丨被加熱到4〇〇 ，流率 約1 0 0 S C C Μ的碳氫化合物被通入反應室，氣壓設定在 0· 4Torr。然後，頻率400仟赫茲、功率1〇〇瓦的電力施加 在下電極到電漿化的碳氫化合物上。此情況持續同時，如 第2E圖所示，含CxHy的碳氫化合物層（覆蓋絕緣膜）17形 成在含開口部1 6a内壁的多孔性si〇CH膜上。SiOCH膜1 2， 多孔性Si 0CH膜13以及碳氫化合物膜17組成如整體的多孔 性層間絕緣膜13益。 然後’如第2F圖所示，露出開口部丨6&底部的§丨〇ch膜 藉由使用CHF3，氧混合氣體的非等向性蝕刻法去除以形成 開口部16b。因此，矽基板u透空於新開口部16的底部。 在此之後’配線金屬膜（未顯示）形成，且上配線層 藉著圖案化配線金屬膜而形成。 •如上所述，依本發明的半導體裝置的製造方法，多孔 性SiOCH膜13形成在由Si〇CH膜組成的下層絕緣膜12上，然 後開口部16a形成在多孔性Si〇CH膜13内。 · 、當穿透到内層水氣被下層絕緣膜12抑制，矽基板上污 染物附著，矽基板表面的電極侵蝕等等，可以避免。 此外，在多孔性Si〇CH膜13内形成開口部i6a的步驟 後，開口部1 6a露出在碳氫化合物（CxHy )氣體電漿中。於 是，含CxHy的碳氫化合物層17形成在含開口部16a内壁多 孔性Si 0CH膜13，因此可以達成改善水氣的阻播。 既然如此，如第一實施例，可以達成改善多孔 絕緣膜13的水氣阻擋，且無需降低介電常數而獲得上；： 線電極μ良好的接^阻抗等等。結果，本發明可以作為形
2060-3128-pfl.ptc 第13頁 493240
=高速邏輯半導體積體電路中多孔性層間絕緣膜3a的接觸 ，之有效方法，以及因層間絕緣膜的介電常數較低而在較 高速運作速度上有非常不錯的效果。 (第三實施例） 第3圖係顯示依本發明第三實施例的半導體裝置的 造方法的剖面圖。 、 ^ 不同於第一和第二實施例的是 ^00 ^ -包括鋁膜22a以及在 = 22a上的鈦膜·211)的内層配線（導電基板）㈡形成在曰—曰 因的矽基板上的下層絕緣膜2 1上。 第3圖是藉使用本發明在晶圓上，乡孔性層間 層絕緣膜2i 同材料所組成的下 多孔性絕緣膜；以及25，由斑第一及J 枓所組成的 所組成的覆蓋絕緣膜。第及第-實施例相同材料 至於第三實施例，因為水氣穿透到多孔性声間纟&綾趑 24a内層區域可以藉著 夕札T生層間絕緣膜 受到抑丨。κι μ· ^ 曰、、邑緣膜23以及覆蓋絕緣膜25而 又到抑制因&，可以避免侵蝕内層配線。 ^ ^ «24a ^ ^ Fal 配線電極間良二等 形成高速邏輯半導體積體 q 本發明可以作為 接觸窗之有效方法，多孔性層間絕緣職的 低而在較高速運作速度上的介電常數較 雖然本發明已參考實：例二巧的效果。 貫施例坪細解釋，本發明不受限於 493240 -—___案號 89106690_ 年月 日_修正 五、發明說明（11) 上述實施例的具體例證。上述實施例的不同修改可以涵蓋 於不脫離本發明要旨的本發明範圍内。 例如，第一實施例中氮化矽膜2被用在多孔性Si OCH膜 3下’但是其他絕緣膜例如氮氧化矽膜或是Si〇CH膜也可使 用。第二實施例中Si 〇CH膜12被用在多孔性Si OCH膜13下， 但是其他絕緣膜例如氮化矽膜或是氮氧化矽膜也可以用。 此外’在第一與第二實施例中，由任一種Si〇c膜與Si〇CHN 膜也可以用來取ί戈這些下層絕緣膜。此處S i OC膜代表代表 僅由石夕’氧，碳，以及氫所組成的絕緣膜，以及Si〇CHN膜 代表僅由石夕，氧，碳，氫以及氮所組成的絕緣膜。例子 中’SiOC膜可以藉著使用流率約5〇 SCCM的（CH3)3Si〇Si (CH3 ) 3的電漿化學氣相沉積法及氣壓設定在1 T〇rr以及 頻率400仟赫兹、功率2〇〇瓦的電力施加在下電極的條件下 形成。而SiOCHN膜可以藉著使用極少量一氧化二氮氣體加 到Si 0CHN膜成形氣體的電漿化學氣相沉積法，例如， (CH3 ) eiOSi (CH3 ) 3和氧的混合氣體而形成。 、此外’在第一實施例中，在多孔性層間絕緣膜3&内形 成開二，7 a的步驟後，含氮絕緣膜4，4 a藉著個別露出表 面與乳氣氣體電漿接觸，形成在多孔性層間絕緣膜與開 口部7a的内表面上。在此，露出面會與代替氨氣的任一氮 氣和一氧化二氮氣體接觸。 而且，如第1E圖所示，在抗蝕劑膜5被去除後，開口 部h的内側面與含氮氣體，例如氨氣等接觸。或者，在去 ”:劑膜5同時，開口部。的内側面與含i氣體，例如 氨亂專接觸。處理y當可與去除抗蝕劑膜相同。
IH9IIEM 第15頁 2060.3128-pfl.ptc
然而多孔性絕緣膜3在露出表面盥 ^ 被含氮絕緣膜4覆蓋，所以人^ 、 刖，已 不合帘成。既妙/所以含氮絕緣膜4在與氨氣接觸前並 a A ^1 2此，多孔性絕緣膜3表面直接與氨氣接 夕 絕緣膜3表面形成含氮絕緣膜4，同時在開 口部7a内側表面形成含氮絕緣膜乜。
SiOCH膜被用作多孔性絕緣 一多孔性SiOC膜以及SiOCHN 而且，在上述實施例中 膜3、13、24。二中選一，任 膜也可以用。 如上所述’依本發明，含多孔性絕緣膜的多孔性層間 絕緣膜形成在任一由含氮絕緣膜、含s丨〇c絕緣膜、含 Si0CH絕緣膜以及含si〇CHN絕緣膜所組成的下層絕緣膜 上’而開口部形成在多孔性層間絕緣膜内。 既然水氣穿透可以藉著下層絕緣膜2減緩，可以避免 侵蝕内層配線等。 此外，在多孔性層間絕緣膜内形成開口部的步驟後， 含氮絕緣膜藉著露出表面與氨氣、氮氣、氧化氮氣體電漿 接觸，形成在層間絕緣膜與開口部的内表面上。 於是’多孔性層間絕緣膜整個表面被含氮絕緣膜覆 蓋，因此多孔性層間絕緣膜的水氣穿透可以進一步被抑 制。 而且，在多孔性層間絕緣膜内形成開口部的步驟後’ 開口部露出在碳氫化合物（CxHy )氣體電漿中。於是’含 CxHy的碳氫化合物層形成在含開口部内壁的多孔性S i 〇cH媒 上，因此可以達成改善水氣的阻擋。 如上所述，可以達成改善多孔性層間絕緣膜的
2060-3128-pfl.ptc 第16頁 493240 _案號89106690_年月日__ 五、發明說明（13) 擋的，且無需降低介電常數而獲得上下配線電極間的良好 接觸阻抗等等。結果，本發明可以作為形成高速邏輯半導 體積體電路中多孔性層間絕緣膜的内接觸窗之有效方法， 以及因層間絕緣膜的介電常數較低而在較高速運作速度有 不錯的效果。
2060-3128-pfl.ptc 第17頁

Claims (1)

  1. 4bfJZ4U 正 六 MM 89106690 申請專利範圍 1· 一種半導體裝置的製造方法，包括下列步驟： 形成由含氮絕緣膜組成的下層絕緣膜於導電基板上，· 形成多孔性絕緣膜於該下層絕緣膜上·以及土 ’ ㈣部於含有該下層絕緣媒與該多孔性絕緣膜的 2. 如申請專利範圍第1項所述的半導體裝置的製造方 法，其中除該下層絕緣膜以及該多孔性絕緣膜之外，該層 ϊ? ϊ i ί形與在該多孔性絕緣膜上的含氮絕緣膜以及 含碳虱化合物絕緣膜的任一者。 3. 如申請專利範圍第丨項所述的半導體裝置的 方 法，其中在該層間絕緣膜内形成該開口部的步 形成含氮絕緣膜於該多孔性絕緣膜上· 形成開口部於該含氮絕緣膜以及該多孔性絕緣膜内； 以及 内表：成；③： ： °亥夕孔性絕緣膜表面以及該開口部 =矣緣膜的該等表面與該開口部的該 4 氣、4氣以及氧化氮氣體電漿接觸。 法 利範圍第3項所述的半導體裝置的製造方 在形成該含虱絕緣膜步驟後，更包括下 形成開口部於該下層纟& ^ ^ ,驟 5·如申請專利範圍；广項緣所膜Λ以义^ 法 甘士产思叫姐从 項所返的半導體裝置的製造方 其中間絕緣膜内形成該開口部的步驟包括： 形成含氮絕緣膜於該多孔性絕緣膜表：上. 使該含氮絕緣膜表面以=及，多孔性絕緣膜内二 ---口部内側表面與氧氣氣 2060-3128-pfl.ptc 493240 i號 8910fifign 六、申請專利範圍 體電漿接觸；以及 形成含氮絕緣膜於該開口部内表面，藉著該含 膜的該等表面與該開口部的該等内側表面和任一 、、邑緣 氣以及氧化氮氣體電漿接觸。 乳、氮 6·如申請專利範圍第5所述的半導體裝置的製造 在形成該含氮絕緣膜步驟後，更包括下列步驟· 形成開二部於該下層絕緣膜内以露出該基板。· 7·如申請專利範圍第丨項所述的半導體 其中在層間絕緣膜内形成該開口部的步驟包的括“方 形成開口部於該多孔性絕緣膜内，·以及 形成含ΐ氫化合物絕緣膜於該多孔性絕緣膜表面、 該開口Πί面，#著該多孔性絕緣膜的該等表 :部的該…!表面和碳氯化合物(Μ)氣體表電面㈣該開 =1=範圍第1項所述的半導體裝置的製造方 其中t層間絕緣膜内形成該開口部的步驟包1 形成開口部於該多孔性絕緣膜内；驟包括. 使該多孔性絕緣膜矣；、， 氣體電漿接觸；以及、1及該開口部内側表面與氧氣 形成含碳氫化合物绍綠时 該開口部内表面，藉著該、夕、，忒多孔性絕緣膜表面以及 口部的該等内側表面和=^絕緣膜的該等表面與該開 觸。 石反氧化合物（My)氣體電漿接 9 ·如申請專利範圍筮 法，在與該碳氫化合物（所述的半導體裝置的製造方 體電漿接觸步驟之後， 法 法 法 2060-3128-pfl.ptc $ 19頁 曰 修正 六 、申請專利範圍 更包括下列步驟： 藉使用氧氣電漿或氧氣加四氟仆，山产μ 於該開口部的該碳氫化合物“二化奴氣體電襞去除殘留 10·如申請專利範圍第9項‘ y °^ ^ 1,.^ 4, ( Cx Hy ) ^ ^ ^ 哪之後，更包括下列步 下層絕緣㈣以露出該基板。 二/Λ Λ圍第1項所述的，導體裝置的製造方 其中忒導電基板是金屬配線。 12. -種半導體裝置的製造方法，包括下列步驟： 任一：成下”緣膜，★導電基板上，且該下層絕緣膜由 mil·1 、邑緣膜、含Sl〇CH絕緣膜以及含SiOCHN絕緣膜 叮、、且成， 法 驟 法 曰 修正 形成多孔性絕緣膜於該下層絕緣膜上；以及 形成開口部於含該下層絕緣膜與該多孔性絕緣膜的層 間絕緣膜。 13·如申請專利範圍第12項所述的半導體裝置的製造 方法，其中除該下層絕緣膜以及該多孔性絕緣膜之外，該 層間絕緣膜包括形成在該多孔性絕緣膜上的含氮絕緣膜以 及含破氫化合物絕緣膜的任一者。 14·如申請專利範圍第12項所述的半導體裝置的製造 方法，其中在該層間絕緣膜内形成該開口部的步驟包括： 形成含氮絕緣膜於該多孔性絕緣膜上； 形成開口部於該含氮絕緣膜以及該多孔性絕緣膜内； 以及
    2060-3128-pfl.Ptc 第 20 頁 ^240 ^240
    案號 8910fifiQ〇 申請專利範圍 --------- 形成含氮絕緣膜於該多孔性絕緣膜表面以及 2表面，藉著該多孔性絕緣膜的該等表面與該開口部 專内側表面和j壬一氨氣、氮氣以及氧化氮氣體電聚：的該 15·如申凊專利範圍第14項所述的半導體裝 觸。 方法，在形成該含氮絕緣膜步驟後，更包括下列牛的^製造 形成開口部於該下層絕緣膜内以露出該基板二驟： 1 6.如申請專利範圍第1 2項所述的半導體裝置 方法，其中在層W絕緣膜内形成該開口部的步驟包的數造 形成開口部於該多孔性絕緣膜内； · 形成含碳氫化合物絕緣膜於該多孔性絕緣臈表 該開口部内表面，藉著該多孔性絕緣膜的該等表面，及 :部的該等内側表面和碳氫化合·（cXHy)氣體電聚y亥開 17.如申請專利範圍第16項所述的半導體裝置的 方法，在與該碳氫化合物（CxHy )氣體電漿接觸步驟艳 後，更包括下列步驟： 藉使用氧氣電漿或氧氣加四氟化碳氣體電漿去除 於該開口部的該碳氫化合物（C η )。 、 留 X y 1 8·如申請專利範圍第丨7項所述的半導體裝置的製& 方法，去除該碳氫化合物（CxIIy )步驟之後，更包括艳 步驟： 卜列 形成開口部於該下層絕緣膜内以露出該基板。 1 9·如申請專利範圍第1 2項所述的半導體裝置的製4 方法，其中該導電基板是金屬配線。 乂
    2060-3128-pfl.ptc 第21頁
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KR20010077813A (ko) 2001-08-20
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DE60022857D1 (de) 2005-11-03
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