|
US6407944B1
(en)
*
|
1998-12-29 |
2002-06-18 |
Samsung Electronics Co., Ltd. |
Method for protecting an over-erasure of redundant memory cells during test for high-density nonvolatile memory semiconductor devices
|
|
JP4105819B2
(ja)
*
|
1999-04-26 |
2008-06-25 |
株式会社ルネサステクノロジ |
記憶装置およびメモリカード
|
|
JP4074029B2
(ja)
*
|
1999-06-28 |
2008-04-09 |
株式会社東芝 |
フラッシュメモリ
|
|
JP2001266096A
(ja)
*
|
2000-03-17 |
2001-09-28 |
Sony Corp |
不揮発性メモリを使った記録媒体及びデータ転送方法
|
|
US6865702B2
(en)
*
|
2001-04-09 |
2005-03-08 |
Micron Technology, Inc. |
Synchronous flash memory with test code input
|
|
US7162668B2
(en)
*
|
2001-04-19 |
2007-01-09 |
Micron Technology, Inc. |
Memory with element redundancy
|
|
US7640465B2
(en)
*
|
2001-04-19 |
2009-12-29 |
Micron Technology, Inc. |
Memory with element redundancy
|
|
JP4417629B2
(ja)
*
|
2001-04-24 |
2010-02-17 |
エヌエックスピー ビー ヴィ |
ビット変更を可能にする、フラッシュメモリにおける使用のための、改良されたエラー修正方式
|
|
US7051264B2
(en)
*
|
2001-11-14 |
2006-05-23 |
Monolithic System Technology, Inc. |
Error correcting memory and method of operating same
|
|
JP4112849B2
(ja)
*
|
2001-11-21 |
2008-07-02 |
株式会社東芝 |
半導体記憶装置
|
|
FR2833434A1
(fr)
*
|
2001-12-07 |
2003-06-13 |
St Microelectronics Sa |
Procede de decodage et de correction d'erreur
|
|
JP3802411B2
(ja)
*
|
2001-12-20 |
2006-07-26 |
株式会社東芝 |
不揮発性半導体記憶装置のデータコピー方法
|
|
KR20040111368A
(ko)
*
|
2002-02-28 |
2004-12-31 |
가부시끼가이샤 르네사스 테크놀로지 |
불휘발성 반도체 기억장치
|
|
US6851018B2
(en)
*
|
2002-03-27 |
2005-02-01 |
Hewlett-Packard Development Company, L.P. |
Exchanging operation parameters between a data storage device and a controller
|
|
US20040153902A1
(en)
*
|
2003-01-21 |
2004-08-05 |
Nexflash Technologies, Inc. |
Serial flash integrated circuit having error detection and correction
|
|
US7496822B2
(en)
*
|
2003-05-15 |
2009-02-24 |
Texas Instruments Incorporated |
Apparatus and method for responding to data retention loss in a non-volatile memory unit using error checking and correction techniques
|
|
US7099221B2
(en)
|
2004-05-06 |
2006-08-29 |
Micron Technology, Inc. |
Memory controller method and system compensating for memory cell data losses
|
|
US20060010339A1
(en)
*
|
2004-06-24 |
2006-01-12 |
Klein Dean A |
Memory system and method having selective ECC during low power refresh
|
|
US7340668B2
(en)
*
|
2004-06-25 |
2008-03-04 |
Micron Technology, Inc. |
Low power cost-effective ECC memory system and method
|
|
JP4534639B2
(ja)
*
|
2004-07-15 |
2010-09-01 |
ソニー株式会社 |
半導体記憶装置
|
|
US7116602B2
(en)
|
2004-07-15 |
2006-10-03 |
Micron Technology, Inc. |
Method and system for controlling refresh to avoid memory cell data losses
|
|
US7392456B2
(en)
*
|
2004-11-23 |
2008-06-24 |
Mosys, Inc. |
Predictive error correction code generation facilitating high-speed byte-write in a semiconductor memory
|
|
JP4695385B2
(ja)
*
|
2004-11-30 |
2011-06-08 |
株式会社東芝 |
メモリカードおよびカードコントローラ
|
|
US7424648B2
(en)
*
|
2005-03-10 |
2008-09-09 |
Matsushita Electric Industrial Co., Ltd. |
Nonvolatile memory system, nonvolatile memory device, data read method, and data read program
|
|
KR100688549B1
(ko)
*
|
2005-05-24 |
2007-03-02 |
삼성전자주식회사 |
비휘발성 메모리를 지원하는 온더플라이 bcc 코덱시스템 및 방법
|
|
US8521970B2
(en)
*
|
2006-04-19 |
2013-08-27 |
Lexmark International, Inc. |
Addressing, command protocol, and electrical interface for non-volatile memories utilized in recording usage counts
|
|
US9245591B2
(en)
*
|
2005-06-16 |
2016-01-26 |
Lexmark International, Inc. |
Addressing, command protocol, and electrical interface for non-volatile memories utilized in recording usage counts
|
|
JP2007133986A
(ja)
*
|
2005-11-11 |
2007-05-31 |
Nec Electronics Corp |
半導体記憶装置
|
|
US20070150798A1
(en)
*
|
2005-12-12 |
2007-06-28 |
Jia-Horng Shieh |
Method for decoding an ecc block and related apparatus
|
|
JP4901334B2
(ja)
*
|
2006-06-30 |
2012-03-21 |
株式会社東芝 |
メモリコントローラ
|
|
JP2008041123A
(ja)
*
|
2006-08-01 |
2008-02-21 |
Toshiba Corp |
半導体記憶装置
|
|
US7894289B2
(en)
|
2006-10-11 |
2011-02-22 |
Micron Technology, Inc. |
Memory system and method using partial ECC to achieve low power refresh and fast access to data
|
|
US7900120B2
(en)
*
|
2006-10-18 |
2011-03-01 |
Micron Technology, Inc. |
Memory system and method using ECC with flag bit to identify modified data
|
|
JP2008108297A
(ja)
*
|
2006-10-23 |
2008-05-08 |
Toshiba Corp |
不揮発性半導体記憶装置
|
|
KR100827662B1
(ko)
|
2006-11-03 |
2008-05-07 |
삼성전자주식회사 |
반도체 메모리 장치 및 이 장치의 데이터 오류 검출 및정정 방법
|
|
US7861139B2
(en)
*
|
2007-01-26 |
2010-12-28 |
Micron Technology, Inc. |
Programming management data for NAND memories
|
|
US20100100797A1
(en)
*
|
2008-10-16 |
2010-04-22 |
Genesys Logic, Inc. |
Dual mode error correction code (ecc) apparatus for flash memory and method thereof
|
|
JP5422974B2
(ja)
*
|
2008-11-18 |
2014-02-19 |
富士通株式会社 |
誤り判定回路及び共有メモリシステム
|
|
US8438453B2
(en)
*
|
2009-05-06 |
2013-05-07 |
Apple Inc. |
Low latency read operation for managed non-volatile memory
|
|
US8470304B2
(en)
*
|
2009-08-04 |
2013-06-25 |
Avidas Pharmaceuticals Llc |
Therapeutic vitamin D sun-protecting formulations and methods for their use
|
|
KR101139187B1
(ko)
*
|
2009-12-28 |
2012-04-26 |
(주)인디링스 |
버퍼 없이 에러를 검출하고 정정하는 컨트롤러 및 그 컨트롤러의 동작 방법
|
|
JP5204186B2
(ja)
*
|
2010-09-24 |
2013-06-05 |
株式会社東芝 |
メモリシステム
|
|
JP2012248258A
(ja)
*
|
2011-05-31 |
2012-12-13 |
Funai Electric Co Ltd |
光ディスク装置
|
|
US8656251B2
(en)
*
|
2011-09-02 |
2014-02-18 |
Apple Inc. |
Simultaneous data transfer and error control to reduce latency and improve throughput to a host
|
|
MY180992A
(en)
|
2013-03-13 |
2020-12-15 |
Intel Corp |
Memory latency management
|
|
US10417091B2
(en)
*
|
2013-03-25 |
2019-09-17 |
Hewlett Packard Enterprise Development Lp |
Memory device having error correction logic
|
|
JP2015053096A
(ja)
|
2013-09-09 |
2015-03-19 |
マイクロン テクノロジー, インク. |
半導体装置、及び誤り訂正方法
|
|
US10381102B2
(en)
|
2014-04-30 |
2019-08-13 |
Micron Technology, Inc. |
Memory devices having a read function of data stored in a plurality of reference cells
|
|
US9734008B2
(en)
*
|
2015-05-06 |
2017-08-15 |
International Business Machines Corporation |
Error vector readout from a memory device
|
|
US9733870B2
(en)
*
|
2015-05-06 |
2017-08-15 |
International Business Machines Corporation |
Error vector readout from a memory device
|
|
US20170141878A1
(en)
*
|
2015-11-16 |
2017-05-18 |
Western Digital Technologies, Inc. |
Systems and methods for sending data from non-volatile solid state devices before error correction
|
|
US10372531B2
(en)
*
|
2017-01-05 |
2019-08-06 |
Texas Instruments Incorporated |
Error-correcting code memory
|
|
KR20180100984A
(ko)
*
|
2017-03-03 |
2018-09-12 |
에스케이하이닉스 주식회사 |
메모리 시스템 및 메모리 시스템의 동작 방법
|
|
US10678633B2
(en)
*
|
2017-11-30 |
2020-06-09 |
SK Hynix Inc. |
Memory system and operating method thereof
|
|
US11036581B2
(en)
*
|
2019-08-08 |
2021-06-15 |
Apple Inc. |
Non-volatile memory control circuit with parallel error detection and correction
|
|
CN114968068B
(zh)
*
|
2021-02-26 |
2025-02-21 |
瑞昱半导体股份有限公司 |
具有单次可编程存储器的电子装置及其写入与读取方法
|
|
WO2023051903A1
(en)
*
|
2021-09-29 |
2023-04-06 |
Dream Chip Technologies Gmbh |
Electronic circuit and method for self-diagnosis of a data memory
|
|
US11934265B2
(en)
|
2022-02-04 |
2024-03-19 |
Apple Inc. |
Memory error tracking and logging
|