KR20010029659A - 기억 장치 및 메모리 카드 - Google Patents
기억 장치 및 메모리 카드 Download PDFInfo
- Publication number
- KR20010029659A KR20010029659A KR1020000021838A KR20000021838A KR20010029659A KR 20010029659 A KR20010029659 A KR 20010029659A KR 1020000021838 A KR1020000021838 A KR 1020000021838A KR 20000021838 A KR20000021838 A KR 20000021838A KR 20010029659 A KR20010029659 A KR 20010029659A
- Authority
- KR
- South Korea
- Prior art keywords
- data
- error
- circuit
- output
- correction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Memory System (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Detection And Correction Of Errors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11856799A JP4105819B2 (ja) | 1999-04-26 | 1999-04-26 | 記憶装置およびメモリカード |
| JP1999-118567 | 1999-04-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20010029659A true KR20010029659A (ko) | 2001-04-06 |
Family
ID=14739802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020000021838A Withdrawn KR20010029659A (ko) | 1999-04-26 | 2000-04-25 | 기억 장치 및 메모리 카드 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US6359806B1 (https=) |
| JP (1) | JP4105819B2 (https=) |
| KR (1) | KR20010029659A (https=) |
| TW (1) | TW479169B (https=) |
Families Citing this family (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6407944B1 (en) * | 1998-12-29 | 2002-06-18 | Samsung Electronics Co., Ltd. | Method for protecting an over-erasure of redundant memory cells during test for high-density nonvolatile memory semiconductor devices |
| JP4105819B2 (ja) * | 1999-04-26 | 2008-06-25 | 株式会社ルネサステクノロジ | 記憶装置およびメモリカード |
| JP4074029B2 (ja) * | 1999-06-28 | 2008-04-09 | 株式会社東芝 | フラッシュメモリ |
| JP2001266096A (ja) * | 2000-03-17 | 2001-09-28 | Sony Corp | 不揮発性メモリを使った記録媒体及びデータ転送方法 |
| US6865702B2 (en) * | 2001-04-09 | 2005-03-08 | Micron Technology, Inc. | Synchronous flash memory with test code input |
| US7162668B2 (en) * | 2001-04-19 | 2007-01-09 | Micron Technology, Inc. | Memory with element redundancy |
| US7640465B2 (en) * | 2001-04-19 | 2009-12-29 | Micron Technology, Inc. | Memory with element redundancy |
| JP4417629B2 (ja) * | 2001-04-24 | 2010-02-17 | エヌエックスピー ビー ヴィ | ビット変更を可能にする、フラッシュメモリにおける使用のための、改良されたエラー修正方式 |
| US7051264B2 (en) * | 2001-11-14 | 2006-05-23 | Monolithic System Technology, Inc. | Error correcting memory and method of operating same |
| JP4112849B2 (ja) * | 2001-11-21 | 2008-07-02 | 株式会社東芝 | 半導体記憶装置 |
| FR2833434A1 (fr) * | 2001-12-07 | 2003-06-13 | St Microelectronics Sa | Procede de decodage et de correction d'erreur |
| JP3802411B2 (ja) * | 2001-12-20 | 2006-07-26 | 株式会社東芝 | 不揮発性半導体記憶装置のデータコピー方法 |
| KR20040111368A (ko) * | 2002-02-28 | 2004-12-31 | 가부시끼가이샤 르네사스 테크놀로지 | 불휘발성 반도체 기억장치 |
| US6851018B2 (en) * | 2002-03-27 | 2005-02-01 | Hewlett-Packard Development Company, L.P. | Exchanging operation parameters between a data storage device and a controller |
| US20040153902A1 (en) * | 2003-01-21 | 2004-08-05 | Nexflash Technologies, Inc. | Serial flash integrated circuit having error detection and correction |
| US7496822B2 (en) * | 2003-05-15 | 2009-02-24 | Texas Instruments Incorporated | Apparatus and method for responding to data retention loss in a non-volatile memory unit using error checking and correction techniques |
| US7099221B2 (en) | 2004-05-06 | 2006-08-29 | Micron Technology, Inc. | Memory controller method and system compensating for memory cell data losses |
| US20060010339A1 (en) * | 2004-06-24 | 2006-01-12 | Klein Dean A | Memory system and method having selective ECC during low power refresh |
| US7340668B2 (en) * | 2004-06-25 | 2008-03-04 | Micron Technology, Inc. | Low power cost-effective ECC memory system and method |
| JP4534639B2 (ja) * | 2004-07-15 | 2010-09-01 | ソニー株式会社 | 半導体記憶装置 |
| US7116602B2 (en) | 2004-07-15 | 2006-10-03 | Micron Technology, Inc. | Method and system for controlling refresh to avoid memory cell data losses |
| US7392456B2 (en) * | 2004-11-23 | 2008-06-24 | Mosys, Inc. | Predictive error correction code generation facilitating high-speed byte-write in a semiconductor memory |
| JP4695385B2 (ja) * | 2004-11-30 | 2011-06-08 | 株式会社東芝 | メモリカードおよびカードコントローラ |
| US7424648B2 (en) * | 2005-03-10 | 2008-09-09 | Matsushita Electric Industrial Co., Ltd. | Nonvolatile memory system, nonvolatile memory device, data read method, and data read program |
| KR100688549B1 (ko) * | 2005-05-24 | 2007-03-02 | 삼성전자주식회사 | 비휘발성 메모리를 지원하는 온더플라이 bcc 코덱시스템 및 방법 |
| US8521970B2 (en) * | 2006-04-19 | 2013-08-27 | Lexmark International, Inc. | Addressing, command protocol, and electrical interface for non-volatile memories utilized in recording usage counts |
| US9245591B2 (en) * | 2005-06-16 | 2016-01-26 | Lexmark International, Inc. | Addressing, command protocol, and electrical interface for non-volatile memories utilized in recording usage counts |
| JP2007133986A (ja) * | 2005-11-11 | 2007-05-31 | Nec Electronics Corp | 半導体記憶装置 |
| US20070150798A1 (en) * | 2005-12-12 | 2007-06-28 | Jia-Horng Shieh | Method for decoding an ecc block and related apparatus |
| JP4901334B2 (ja) * | 2006-06-30 | 2012-03-21 | 株式会社東芝 | メモリコントローラ |
| JP2008041123A (ja) * | 2006-08-01 | 2008-02-21 | Toshiba Corp | 半導体記憶装置 |
| US7894289B2 (en) | 2006-10-11 | 2011-02-22 | Micron Technology, Inc. | Memory system and method using partial ECC to achieve low power refresh and fast access to data |
| US7900120B2 (en) * | 2006-10-18 | 2011-03-01 | Micron Technology, Inc. | Memory system and method using ECC with flag bit to identify modified data |
| JP2008108297A (ja) * | 2006-10-23 | 2008-05-08 | Toshiba Corp | 不揮発性半導体記憶装置 |
| KR100827662B1 (ko) | 2006-11-03 | 2008-05-07 | 삼성전자주식회사 | 반도체 메모리 장치 및 이 장치의 데이터 오류 검출 및정정 방법 |
| US7861139B2 (en) * | 2007-01-26 | 2010-12-28 | Micron Technology, Inc. | Programming management data for NAND memories |
| US20100100797A1 (en) * | 2008-10-16 | 2010-04-22 | Genesys Logic, Inc. | Dual mode error correction code (ecc) apparatus for flash memory and method thereof |
| JP5422974B2 (ja) * | 2008-11-18 | 2014-02-19 | 富士通株式会社 | 誤り判定回路及び共有メモリシステム |
| US8438453B2 (en) * | 2009-05-06 | 2013-05-07 | Apple Inc. | Low latency read operation for managed non-volatile memory |
| US8470304B2 (en) * | 2009-08-04 | 2013-06-25 | Avidas Pharmaceuticals Llc | Therapeutic vitamin D sun-protecting formulations and methods for their use |
| KR101139187B1 (ko) * | 2009-12-28 | 2012-04-26 | (주)인디링스 | 버퍼 없이 에러를 검출하고 정정하는 컨트롤러 및 그 컨트롤러의 동작 방법 |
| JP5204186B2 (ja) * | 2010-09-24 | 2013-06-05 | 株式会社東芝 | メモリシステム |
| JP2012248258A (ja) * | 2011-05-31 | 2012-12-13 | Funai Electric Co Ltd | 光ディスク装置 |
| US8656251B2 (en) * | 2011-09-02 | 2014-02-18 | Apple Inc. | Simultaneous data transfer and error control to reduce latency and improve throughput to a host |
| MY180992A (en) | 2013-03-13 | 2020-12-15 | Intel Corp | Memory latency management |
| US10417091B2 (en) * | 2013-03-25 | 2019-09-17 | Hewlett Packard Enterprise Development Lp | Memory device having error correction logic |
| JP2015053096A (ja) | 2013-09-09 | 2015-03-19 | マイクロン テクノロジー, インク. | 半導体装置、及び誤り訂正方法 |
| US10381102B2 (en) | 2014-04-30 | 2019-08-13 | Micron Technology, Inc. | Memory devices having a read function of data stored in a plurality of reference cells |
| US9734008B2 (en) * | 2015-05-06 | 2017-08-15 | International Business Machines Corporation | Error vector readout from a memory device |
| US9733870B2 (en) * | 2015-05-06 | 2017-08-15 | International Business Machines Corporation | Error vector readout from a memory device |
| US20170141878A1 (en) * | 2015-11-16 | 2017-05-18 | Western Digital Technologies, Inc. | Systems and methods for sending data from non-volatile solid state devices before error correction |
| US10372531B2 (en) * | 2017-01-05 | 2019-08-06 | Texas Instruments Incorporated | Error-correcting code memory |
| KR20180100984A (ko) * | 2017-03-03 | 2018-09-12 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 메모리 시스템의 동작 방법 |
| US10678633B2 (en) * | 2017-11-30 | 2020-06-09 | SK Hynix Inc. | Memory system and operating method thereof |
| US11036581B2 (en) * | 2019-08-08 | 2021-06-15 | Apple Inc. | Non-volatile memory control circuit with parallel error detection and correction |
| CN114968068B (zh) * | 2021-02-26 | 2025-02-21 | 瑞昱半导体股份有限公司 | 具有单次可编程存储器的电子装置及其写入与读取方法 |
| WO2023051903A1 (en) * | 2021-09-29 | 2023-04-06 | Dream Chip Technologies Gmbh | Electronic circuit and method for self-diagnosis of a data memory |
| US11934265B2 (en) | 2022-02-04 | 2024-03-19 | Apple Inc. | Memory error tracking and logging |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63181197A (ja) | 1987-01-22 | 1988-07-26 | Nec Corp | スタチツク型半導体メモリ装置及びその駆動方法 |
| JPH01133299A (ja) | 1987-11-18 | 1989-05-25 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPH01235100A (ja) | 1988-03-15 | 1989-09-20 | Hitachi Ltd | 半導体記憶装置 |
| JPH02270052A (ja) * | 1989-01-23 | 1990-11-05 | Nec Corp | 集合型icメモリカード装置 |
| JP2809772B2 (ja) | 1989-12-11 | 1998-10-15 | 株式会社東芝 | 電子機器の筐体構造 |
| JPH0425954A (ja) * | 1990-05-22 | 1992-01-29 | Nec Corp | メモリ装置のエラー処理方式 |
| JPH04206100A (ja) | 1990-11-30 | 1992-07-28 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPH04289599A (ja) | 1991-01-10 | 1992-10-14 | Nec Corp | 不揮発性メモリ |
| JPH04335300A (ja) | 1991-05-10 | 1992-11-24 | Mitsubishi Electric Corp | 半導体メモリ装置 |
| US5359569A (en) * | 1991-10-29 | 1994-10-25 | Hitachi Ltd. | Semiconductor memory |
| JPH05128895A (ja) | 1991-10-31 | 1993-05-25 | Nec Ic Microcomput Syst Ltd | 半導体装置 |
| JPH06110793A (ja) * | 1992-09-30 | 1994-04-22 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JPH07129424A (ja) * | 1993-11-05 | 1995-05-19 | Fuji Electric Co Ltd | Ecc機能回路の1ビット誤り検知通知装置 |
| JPH07146825A (ja) * | 1993-11-22 | 1995-06-06 | Okuma Mach Works Ltd | メモリシステム |
| JP3272903B2 (ja) * | 1995-03-16 | 2002-04-08 | 株式会社東芝 | 誤り訂正検出回路と半導体記憶装置 |
| JP3181197B2 (ja) | 1995-07-11 | 2001-07-03 | 富士変速機株式会社 | 格納システムの組立方法 |
| GB2291991A (en) * | 1995-09-27 | 1996-02-07 | Memory Corp Plc | Disk drive emulation with a block-erasable memory |
| JP3534917B2 (ja) * | 1995-11-08 | 2004-06-07 | 株式会社日立製作所 | メモリアクセス制御方法 |
| JPH09288895A (ja) * | 1996-04-19 | 1997-11-04 | Toshiba Corp | 3値記憶半導体記憶システム |
| US6034891A (en) * | 1997-12-01 | 2000-03-07 | Micron Technology, Inc. | Multi-state flash memory defect management |
| JP4105819B2 (ja) * | 1999-04-26 | 2008-06-25 | 株式会社ルネサステクノロジ | 記憶装置およびメモリカード |
-
1999
- 1999-04-26 JP JP11856799A patent/JP4105819B2/ja not_active Expired - Fee Related
-
2000
- 2000-04-11 TW TW089106718A patent/TW479169B/zh not_active IP Right Cessation
- 2000-04-25 KR KR1020000021838A patent/KR20010029659A/ko not_active Withdrawn
- 2000-04-26 US US09/558,036 patent/US6359806B1/en not_active Expired - Lifetime
- 2000-08-11 US US09/636,736 patent/US6351412B1/en not_active Expired - Lifetime
-
2001
- 2001-12-12 US US10/012,525 patent/US6549460B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP4105819B2 (ja) | 2008-06-25 |
| JP2000305861A (ja) | 2000-11-02 |
| TW479169B (en) | 2002-03-11 |
| US20020054508A1 (en) | 2002-05-09 |
| US6549460B2 (en) | 2003-04-15 |
| US6351412B1 (en) | 2002-02-26 |
| US6359806B1 (en) | 2002-03-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20000425 |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |