TW455920B - Edge bead removal/spin rinse dry (EBR/SRD) module - Google Patents
Edge bead removal/spin rinse dry (EBR/SRD) module Download PDFInfo
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- TW455920B TW455920B TW089113447A TW89113447A TW455920B TW 455920 B TW455920 B TW 455920B TW 089113447 A TW089113447 A TW 089113447A TW 89113447 A TW89113447 A TW 89113447A TW 455920 B TW455920 B TW 455920B
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- 239000011324 bead Substances 0.000 title description 15
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 239000012530 fluid Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 27
- 230000002093 peripheral effect Effects 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 239000008367 deionised water Substances 0.000 claims description 13
- 229910021641 deionized water Inorganic materials 0.000 claims description 13
- 238000011049 filling Methods 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 6
- 230000002079 cooperative effect Effects 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 241001125929 Trisopterus luscus Species 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 81
- 238000012545 processing Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- 241000239290 Araneae Species 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007717 exclusion Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 235000015170 shellfish Nutrition 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 241000507145 Cakile lanceolata Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 210000005069 ears Anatomy 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
455920 A7 B7 經濟部智慧財產局員工消f合作社印製 五、發明說明() 發明領域: 本發明係關於一種電化學沉積或電鍍設備4更特定 地,本發明係關於一種將沉積物從一基材的周邊部分去除 的設備。 發明背景: 次四分之一微米,多層金屬是下一世代超大型積體電 路(ULSI)的主要關鍵技術之一。此技術的核心之多層内連 線需要一深寬比被形成之内連線特徵(feature),包括接 點’介廣孔’接線及其它特徵’的平坦化。這些内連線之 可靠的形成對於ULSI的成功及對於提高在每一基材及晶 粒上的電路密度與品質之持續的努力是非常重要的。 當電路揞度提高時’介層孔,接點及其它特徵,以及 介於它們之間的介電物質的寬度會降低至小於25〇奈米, 而介電層的厚度則維持大致固定,其結果為該等特徵的高 寬比’即高度除以寬度,會提高》許多傳統的積處理,如 物理氣相沉積(PVD)及化學氣相沉積(CVD),在填充深寬比 大於4: 1’特別是大於1〇: 1,的結構時有困難。因此, 目前有許多的努力是有關於無氣隙,具有高的深寬比,即 特徵高度與特徵寬度的比為4: 1或更高者,之奈米大小的 特徵的形成。此外,當特徵寬度降低,裝置電流保待—定 或提高時,這會導致在特徵中之電流密度提高的結果^ 因為鋁的低電阻性’其對於二氧化矽(SiOj之絕佳的 黏著性,其易於形成圖案,及能夠以高純度的形式取得它 第2頁 本紙張尺度適用中g ®家標準(CNS)A4規格(210 X 297公釐) - ----I ---I i ^---- I I I I 1 I I I I I 《請先閱讀背面之注意事項再填寫本頁> A7 B7 92〇 五、發明說明() 的能力等關係,元素鋁(A1)及其合金是在半導體處理中被 用來形成接線及插塞之傳統金屬。然而,鋁比其它更易導 電的金屬,如銅,具有較高的電阻係數,及鋁亦會遭遇到 導致在導電體内氣隙的形成之電子遷移的問題。 與鋁比較起來,銅及其合金具有比鋁低的電阻係數及 明顯大很多之電子遷移抵抗性。這些特性對於支援於高層 級的集積度所遭遇的高電流密度及增加裝置速度而言是 很重要的。銅亦具有良好的導熱性且可在極高純度下被獲 得。因此,銅變成用來填充在半導體基材上之次四分之一 微米,高的深寬比内連線特徵之選用金屬。 雖然在半導體裝置製造上有選用銅的欲望,但將銅沉 積於非常高的深寬比特徵内,如4: 1或具有0.35微米(或更 小)寬的介層孔,之製造方法的選擇則相當有限。這些處 理上的限制的結果為,先前被限制在電路板上的接線的製 造上之電鍍最近剛被用來填充在半導體裝置上的介廣孔 及接點。 金屬電鍍是習知的且可藉由許多種技術來達成。__典 型的方法通常包含物理氣相沉積一阻障層於特徵表面 上’物理氣相沉積一導電金屬晶種層,最好是鋼,於該阻 障層之上’然後電鍍一導電金屬於該晶種層上用以填充結 構/特徵。最後,該等被沉積的層及介電層被平坦化,例如 藉由化學機械研磨(CMP),來完成一導電内連線特徵。 第1圖為一具有接觸銷之簡化的典型噴水電鍵裝置1〇 的剖面圖》通常,噴水電鍍裝置10包括一電解液容器12其
第3T 本紙張尺度適用中國國家標準(CNS)A4規格(2W * 297公爱〉 ------------- ^ - ------ - 訂---·線 (請先閱讀背面之沒意事項再填寫本頁) 經濟部智慧財產局員工消费合作社印製 經濟部智慧財產局員工消f合作社印製 A7 B7 五、發明說明() 具有一上開口,一基材固持件14其設置於該電解液容器12 之上,及一設置在該電解液容器12的底部之陽極丨6及一與 該基材22接觸之接觸環20 ^多個溝槽24被形成於該基材固 持件14的下表面上。一真空紫浦(未示出)連接至該基材固 持件14並於該等溝槽24連通用以產生一能夠在處理期間 將基材22固定於該基材固持件14上的真空狀態.該接觸環 20包含多個金屬或半金屬接觸銷26其分佈在該基材22的 圓周部分的周圍用以界定一中央的基材電鍍表面。該等接 觸銷26徑向朝内地延伸跨越基材22的一窄的圓周部分並 在接觸銷26的尖端與基材22的一導電晶種層接觸。一電源 供應器(未示出)被接至該等銷26上藉以提供一電偏壓至該 基材22。基材22被置於該圚筒形的電解液容器12之上且該 電解液於該電鍍裝置10的搡作期間垂直地衝揸該基材電 鍵表面。 在目前的電鍍處理中所遭遇到的一個特定的問題為 該晶種層的邊緣在電鍍處理期間會接受到過量的沉積’典 型地被稱為邊緣珠滴。第2圖為一晶圓3 0的邊緣的一剖面 圖,其顯示該晶種層34的邊缘32上之過量的沉積36 »如第 2圖中所示的,該晶圓30具·有一被沉積於其上的晶種層32 及一被電化學地沉積於該晶種層34上之一電鍍層38。已被 觀察到的是,該晶種層34的邊緣32接受到的電流密度比晶 種層34其它部分所接受到的要來得高’结果為該晶種層34 的邊緣32的沉積速率較高。在晶種層34的邊緣32處之機械 應力亦高於晶種層之其它部分’造成該晶種廣的邊緣上之 第4贯 本纸張尺度適用中國國家標準(CNS>A4規格(210 X 297公爱) -n I ff n n I ϋ ^ . I i^i I i n 1^1 · I l> n n n n f t f請先閱讚背面之汉f項再填寫本頁> A7 B7 五、發明說明() 沉積向上拉離該晶圓30的邊緣。該過量的沉積36典型地是 以CMP處理來去除β然而,在CMP處理期間,在晶圓邊緣 上之該過量的沉積36典整地會從該晶種層的邊緣撕離且 會傷及該晶園之相粼的部分a該斷裂的金屬亦會傷及形成 於該晶園上的裝置。因此,被適當地形成的裝置數量會被 減少且每一被形成的裝置的成本即會提高。 因此,對於可將晶圓邊緣上之過量的沉積去除掉的設 備存在著需求。最好是,該設備去除掉該晶圊的邊緣處之 過量的沉積同時不會傷及形成於該晶圓表面上之裝置51對 該設備的進一步需求為該設備可被設計來在該過量的沉 積已從該晶圓上被去除掉之後實施一晶圓清潔處理,如一 旋轉-沖洗-乾燥處理。 發明目的及概述: 本發明大體上提供一種用來去除在一晶圊的邊緣上 之沉積的設備及方法。 本發明的一個態樣提供一種蝕刻一基材的設備,其包 含:_容器;一設置於該容器内之基材支撐器;一固定於 該基材支撐器上之旋轉作動件;及一流體輸送組件其被設 置於該容器内用來輸送一蝕刻劑至一設置於該基材支撐 器上的基材的周邊部分。最好是,該基材支撐器包含一真 空夾盤及該流體輸送組件包含一或多個喷嘴。 本發明的另一個態樣提供一種姓刻一基材的方法,其 包含:將置於一可轉動的基材支撐器上的基材轉動;及輸 第s頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 * 297公釐) ' <請先《讀背面之注意事項再填寫本頁) ^ ------- 訂--— — — — — — 經濟邨智慧財產局員工消费合作杜印製 45592ο Α7 Β7 五、發明說明() (諝先閱讀背面之注意事項再填寫本Ϊ ) 送一蝕刻劑至該基材的一周邊部分β最好是,該基材是以 lOOrpm至lOOOrpm間的轉速被轉動’且該蝕刻劑是在一大 致與該基材的周邊成切線的方向上被輸送且其入射角約 與該基材的一表面夾〇度至45度。 本發明的另一態樣提供一種用來去檢在該晶圓的邊 緣上之故量沉積的設備’其被設計來在該過量的沉積已從 該晶圓上被去除掉之後實施一晶圓清潔處理,如一旋轉_ 沖洗-乾燥處理。該設備包含:一容器;一設置於該容器 内之基材支撐器:一固定於該基材支撐器上之旋轉作動 件;及一流體輸送組件其被設置於該容器内用來輸送一姓 刻劑至一設置於該基材支轉器上的基材的周邊部分及輸 送一沖洗流體,如去離子水,至該基材的表面。 牖式簡蕈說明:_ 本發明之一更為特定的描述可藉由參照顯示於附圏 中之實施例而被作成’使得本發明之上述特徵,優點及目 地可被詳地地瞭解。 經濟部智慧財產局貝工消費合作社印製 然而’應注意的是,附圖中所示者為本發明之典型的 實施例,因此不應被認為是本發明範園的限制,因為本發 明可以有其它等效的實施例。 萁—具有接觸销之簡化的表刑 吊i ®馮 π π 丹型噴水電鍍裝置1 〇的剖 面圖。 第2圖為一晶園30的邊緣的一剖面圖,其顯示該晶種層34 的邊緣3 2上之過量的沉積3 6。 笫6耳 本紙張尺度適用令國國家標準(CNS)A4規格(210 X 297公釐) 經濟部智慧財產局員工消费合作社印製 A7 B7 五、發明說明() 第3圖為本發明之一邊緣珠滴去除(EBr)模組的側剖面 圖’其顯示一被置於處理位置上的基材用以將該基 材的邊緣上之過量沉積去除。 第4圖為一 EBR模組的上視圖,其顯示用來將邊緣珠滴去除 之噴嘴的一實施例。 第5圖為一噴最150的侧視圖,其被設置成與一將被處理的 晶圓122相關。 第6圖為一邊緣珠滴去除/旋轉,沖洗-乾燥(Ebr/Srd)結合 模组的剖面酮,其顯示在一被垂直地設置於流體入 口之間之一處理位置上的基材。 圖號#照說明: 10 噴水電鍍裝置 12 電解液容器 1 4 基材固持件 16 陽極 20 接觸環 22 基材 24 溝槽 26 接觸銷 30 晶圓 32 邊緣 34 晶種層 36 過量沉積 38 電鍍層 100 EBR模組 102 容器 104 晶圓固持器奴件 106 流體/化學物輸送组件 108 側壁 1 10 容器底部 I 12 中心孔 1 14 上翻的内壁 1 16 流體出口 118 舉升組件 120 轉動組件 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) D ^1 ^1 ϋ i> * I ϋ «I n ^1.^-6,< * I I n n I ·1 n 1 t (請先閱讀背面之沒意事項再填寫本頁) 48: .· A7 發明說明() 122 晶圓 124 真空央盤 126 晶圓邊緣 128 環形密封件 130 晶圓舉升件 134 臂 136 環形基底 138 物蛛夬 140 上表面 142 夾持部 144 下部 150 喷嘴 1 52 分配臂 154 作動器 156 撓性管 160 去離子水源 162 蝕刻劑源 164 電腦控制器 200 EBR/SDR 模組 170 喷嘴 172 去離子水嘴嘴 174 作動件 176 臂 發明詳細說明: 第3圈為本發明之_ -邊緣珠滴去除(EBR)模組的側剖 面圖 ’其顯示一被置於處理位置上的基材用以將該基材的 邊緣上之過量沉積去除。 該E B R模組1〇〇可以是一單獨的單 元或 被設置成一電化學 沉積系統 或其它沉積系統的一個 構件 。該EBR模組1〇〇包含一容器1〇2,一晶圓固持器組件 104及一流體/化學物輸送组件丨〇6。該容器1〇2最好是包含 一圖筒形側壁108,一具有一中心孔U2之容器底部u〇, 及一向上翻的内壁其由該中心孔U2的周逢向上延 伸a —流體出口 116被連接至該容器底部110以促進使用過 的流體及化學物由該EBR模組110中排出。 第8頁 本紙張尺度適用中國理家標準(CNS)A4規格<210 X 297公釐) (諳先閱讀背面之注s事項再填寫本頁) n 1 n ^aJt ii ϋ u n I I. 經濟部智慧財產局具工消费合作社印製 4559^0 A7 B7 經濟部智慧財產局貝工消費合作社印製 五、發明說明() 該晶圓固持器组件104被設置於該中心孔112之上並 包括一舉升組件118及一轉動組件120其延伸通過該中心 孔112。該舉升組件118最好是包含風箱軟管式舉升组件或 一導螺桿步進馬達式舉升組件,這兩種在此技藝中為習知 且可商業上獲得。該舉升組件1 1 8協助將該晶圓1 22在該晶 圓固持器組件104上之輸送及定位於不同的垂直位置之 間。該轉動組件120最好是包含一旋轉馬達其被固定於該 舉升组件底下。該轉動組件丨2 0在該邊緣珠滴去除處理期 間轉動該晶囲1 22 » 該晶圓固持器組件104最好是包含一真空夾盤124其 由該晶圓背側來固定一晶圓1 22且不會妨礙到該晶圓邊緣 126。最好是,一環形密封件128,如一可壓擠的Ο形環, 被置於該真空夾盤表面的一周邊部分處用在在該邊緣珠 滴去除處理期間將該真空夾盤124密封起來與所使用的流 體及化學物隔離。該晶圓固持器組件1 04最好包括一晶圓 舉升件130其協助將一晶圓從一輸送機械臂的機械臂載盤 輸送至該晶圓固持器組件1 04上。該晶®舉升件1 30,如第 3圖所示,包含一蜘蛛夾組件其亦可被用來在一旋轉-沖洗 -乾燥處理期間固定該晶圓。該蜘蛛夹组件包含多個臂從 一環形基底136延伸出及一蜘蛛夾138可樞轉地設置於該 臂134的遠段上。該環形基底136包括一向下延伸壁137其 與該上翻的内壁114重疊用以容納在處理該容器102内側 時所使用的流體。該蜘蛛夾138包括一上表面140用來承接 —晶圓,一夾持部142用來夹住該晶圃,及一下部丨44,當 *9頁 本紙張尺度適角中围a家標攀(CNS)A4規格(210 X 297公釐) ----------- ^ — — — — — — ^----1 — II I, Λ請先閱讀背面之注意事項再填寫本頁) Α7 Β7 五、發明說明() 該晶圖固持組件被轉動時其因離心力的關係而促成該夹 持部142與該晶圓的邊緣接觸。或者,該晶圓舉升件13〇包 含一被使用在許多晶圓處理設備中之晶圓舉升件,如一组 舉井銷或一設置於一皋升平台上的舉升圈或在該真空夾 盤本體内或周圍的舉升環。 該流體/化學物輸送組件i〇6包含—或多個嘴嘴150其 被設置在一或多個分配臂152上。該分配臂152延伸穿過該 容器側壁108且被固定於一作動件154上,其伸展及收縮以 改變該喷嘴150在該基材122上的位置。藉由具有_可伸縮 的分配臂152,該喷嘴可被置於該晶圓上用以將該喷嘴由 該晶圓的内部指向該晶圓的邊緣’其可加強對於流體/蝕刻 劑輸送至該晶囷邊緣的控制β或者,該分配臂152被不動 地固定於該容器壁108上,且噴嘴150被固定於該分配臂的 一位置上而不會干擾到該容器102内之垂直的晶圓移動。 最好是,該分配臂152包括一或多個導管鄞伸穿過該 分配臂用以將噴嘴1 5 0連接至一蝕刻劑源。有許多種用來 從一基材上去除掉沉積金屬的蝕刻劑在此技藝中是習知 的,如硝酸及其它市面上可獲得的酸。或者該喷嘴150經 由一設置在該分配臂152的導管内之撓性管156而被連 接。最好是,喷嘴150是以成對的方式被設置在晶圓的上 及下的位置以分別輸送流體/化學物至該晶囷的上邊緣表 面及下邊緣表面。喷嘴150可選擇性地連接一或多個流體/ 化學物源,如一去離子水源I 60及一蝕刻劑源1 62,及一電 腦控制器1 64根據一所需要的程式而切換一或多個流體’蚀 第10貰 本紙張尺度適用令國國家標準(CNS)A4規格(210 X 297公藿) (請先閱讀背面之注意事項再填寫本頁) - — lull — !11111 I - 經濟部智慧財產局員工消费合作社印製 45592〇 Α7 Β7 經濟部智慧財產局貝工消费合作社印製 五、發明說明() 刻劑源之間的的連接。或者’ 一第一组喷嘴被連接至該去 離予水源及一第二组喷嘴被連接至該姓刻劑源’及該等噴 嘴被選擇性地啟動以提供流體至該晶圓。 最好是,噴嘴150是以—角度被設置用以在一大致切 線的方向上提供流體接近該晶圓的周邊部分。第4圖為一 EBR模组的上視圖,其顯示用來將邊緣珠滴去除之喷嘴的 一實施例。如圖所示,三個喷嘴150被大致等間距地繞著 該容器内壁108的一内表面被設置。每一噴嘴150被設置來 提供流體至該晶圓的一邊緣部分且被定位以提供足夠的 空間讓晶囫垂直移動於一處理位置與—輸送位置之間。最 好是,該流體輸送或喷灑模式是由喷嘴的形狀及流體壓力 來控制用以限制流體輸送至一選定的邊緣排除範圍。例 如,該蝕刻劑是被限制在該晶圓的外3 mm環形部分上以達 到3mm邊緣排除。該等喷嘴被定位用以以一入射角度提供 蝕刻劑至晶圓表面,其在該蝕刻劑與該晶園接觸時控制蝕 刻劑的濺灑。第5圖為一喷最1 5 0的側視圖,其被設置成與 一將被處理的晶圓1 22相關。最好是,該蝕刻劑對該晶圓 的入射角α是介於0度至45度之間,更佳的是介於10度至 3 0度之間。 該晶圓1 22於邊緣珠滴去除處理期間被旋轉用以讓該 晶圓的周邊部分都能大致相等地曝露於蝕刻劑中。最好 是,該晶囷122最好是被轉動於與蝕刻劑喷灑方向同向的 方向上以利於邊緣珠滴去除的控制。例如,如第4圖所示, 該晶圆被轉動於逆時鐘方向(箭頭Α)其對應於逆時鐘的喷 第11頁 .I — — — — —--— — — —、^, 1Ι1ΙΙ1 訂 -- - ---I - t (請先閱讀背面之注幸?事項再填寫本頁) 本紙張尺度適用中國國家楳準(CNS)A4現格(210 X 297公笼> A7 B7 55^2〇 五、發明說明() 灑-該晶圊最好是以l〇〇rpm至lOOOrpm間的轉速,更佳的 是5 00rpm至700rpm之間的轉速,被旋轉。該有效的蝕刻率 (即,被去除的铜的數量除上去除所花的時間)為該蝕刻劑 的蝕刻率,接觸該晶圓標緣之蝕刻劑的速度’蝕刻劑的溫 度,及該晶圓的旋轉速度的函數。這些參數可被改變以達 到所需要的特定結果。 經濟部智慧財產局貝Η消费合作社印髮 在操作時,一晶圓122被提供於該EBR模組100的晶圓 固持器組件104上,且該晶圃舉升件130將該晶圓舉離一輸 送機械臂載盤3該機械臂載盤收回及該晶圓舉升件130將 晶圓降低至該真空夾盤124上。該真空系統被啟動用以將 晶囷固定於其上,且該晶圓固持器組件1 04與其上的晶® 於噴嘴150輸送蝕刻劑至該晶圓122的周邊部分時被旋 轉。該蝕刻處理被進行一段足以將晶圃邊緣上的過量沉積 (即’邊緣珠滴)去除掉的時間。該晶圓最好是在一旋轉-沖洗-乾燦處理中用去離子水加以清洗。該旋轉-沖洗-乾燥 處理典型地包括輸送去離子水至該晶圓上用以將殘餘的 蝕刻劑從該晶圓上沖洗掉並在一高速下旋轉該晶圓以乾 燥該晶圓•在該邊緣珠滴去除處理及該旋轉-沖洗-乾燥處 理完成之後該晶困被送出該EBR模組1〇〇,且該晶圓已準備 好作其它的處理’如熱退火處理及其它晶圓處理。 第6囷為一邊緣珠滴去除/旋轉-沖洗·乾燥(ebr/SRD) 結合模紐的剖面圖’其顯示在一被垂直地設置於流體入口 之間之一處理位置上的基材。本發明的此實施例對於邊緣 珠滴去除(EBR)處理及旋轉-沖洗-乾燥(SRD)處理兩者都 第12肓 本紙張尺度綱中國國家標準(CNs>A4規格(21(^297公釐) A7 45^92〇 ____B7 _ 五、發明說明() 是有用的。該[811/3110模组2〇〇的構件與上述之£1^8模组的 構件是相類似的’且相同的構件是以相同的標號來表示。 除了 EBR模組100的構件之外,該ebr/SRD模組200包含了 一额外的下喷嘴組170其設置於該晶圓的底下,最好是與 相對應之噴嘴組150垂直地對齊。該等下噴嘴17〇被選擇性 地連接至去離子水源1 60及蝕刻劑源丨62,且被該等喷嘴 170所輸送之流體是被該控制器164所控制。最好是,該等 喷嘴170被設置成可將流體輸送至該基材背側的周邊部 分。該等下喷嘴170最好是被設置在不會干擾的晶圓舉升 件130的運動的位置處。該等下噴嘴17〇亦可經由一臂176 而被固定於一作動器174上’其會伸展及收缩以將嘴嘴17〇 置於所想要的位置處。或者’該舉升件130沒有在處理期 間被旋轉用以防止干擾到 雖然以上所述係關於本發明的較佳實施例,但本發明 的其它及進一步的實施例可在不偏離本發明之基本範圍 下被達成,該範圍是有以下的申請專利範圍來界定。 (5JF先wtl背面之沒意事項再填寫本頁)
,衣---I 訂---------線. 經濟部智慧財產局貝工消费合作社印製 T 3 本紙張尺度適用令國國家標準(CNS)A4規格(210 X 297公爱)
Claims (1)
- 六、申請專利範圍 A8 B8 C8 D8 1 . 一種蝕刻一基材的設備,’、至少包含. a) —容器j b) —設置於該容器内之基材支撐器, c) 一固定於該基讨支搏器上之旋轉作動件;及 d) U輸送組件,其被設置於該容器内用來輸送 一#_至一設置於該基材支撲器上的基#的周邊部 分" 2.如申請專利範圍第1項所述之設備’其中該基材支撐器包 含一真空夾盤》 3 ·如申請專利範圍第1項所述之設備,其中該流體輸送組件 包含一或多個啧嘴。 — — Inf— — — — — — — ! ^ I I (請先閲讀背面之注意事項再填窝本頁) 訂 經濟部智慧財產局員工消费合作社印裳 4 ·如申請專利範圍第1項所述之設備,其中該流體輸送組件 包含一或多個被垂直對齊的喷嘴组對。5. 如申諳專利範圍第1項所述之設備,其中該流體輸送组件 被選擇性地連接至一蝕刻劑源與一去離予水源^6. 如申請專利範圍第i項所述之設備,其中該流雜輸送組件包含一第一組噴嘴其可連接至-蚀刻劑源及一第二组 •喷嘴其可連接至一去離子水源。 本紙張尺度適用t國國家標準(CNS)A4規格(21〇x297公釐) 線 ο AS Β8 CS D8 六、申請專利範圍 7. 如中請專利範圍第1項所述之設備’其更包含: e)—去離干水嘖嘴’其被汉置於該容器内用以將去 離子水送至該基材的一中心部分。 8. 如申請專利範圍第1項所述之設備,其更包含: e)—基材舉升組件’其被設置於該容器内。 9. 如申請專利範圍第8項所述之設備’其中該基材舉升組件 包含多個從一舉升平台径向延伸的臂。 10·如申請專利範圍第8項所述之設備’其中該基材舉升組 件包含多個從一舉升乎台徑向延伸的臂及多個被設置 在該等臂的遠端上的夾子* —種蝕刻一基材的方法,其至少包含: a) 將置於一可轉動的基材支撐器上的基材轉動;及 b) 輸送一蝕刻劑至該基材的一周邊部分* 12‘如申請專利範圍第U項所述之方法,其中該基材是以約 1 OOrpm至lOOOrpm間的轉速被旋轉。 1 3 ·如申請專利範圍第1 1項所述之方法,其中該蝕刻劑是被 輸送於一大致與該基材的周邊部分成切線的方向上。 第15頁 - — — 1 —Ini — 11 i .i •ill· — — — β -------— (請先閱讀背面之注意事項再填寫本頁} 經濟部智慧財產局員工消費合作钍印製 本紙稱疋廢;糸田 .λ— 1\ 〒 IT T s Μ 公 y X u —A ώ A8 B8 C8 D8 45592〇 六、申請專利範圍 1 4 ·如申請專利範圍第1 1項所述之方法,其中該蝕刻劑是以 一與該基材约一表面夹0度至45度角的入射角被輸送。 1 5.如申請專利範圍第1 1項所述之方法,其中該蝕刻劑是被 送至該基材的前侧及後側。 16.如申請專利範圍第11項所述之方法,其更包含: c) 在蝕刻之後輸送一沖洗劑至該基材。 1 7.如申請專利範圍第1 6項所述之方法,其更包含: d) 旋轉乾燥該基材。 18.如申請專利範圍第U項所述之方法,其更包含: c)輸送去離子水至該基材的一中心部分》 -------------^--I--r---訂.--------*5^· (諳先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 第16頁 本紙張尺度適用中國國家標準(CNS)A4規格(2W X 297公釐)
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US09/350,212 US6516815B1 (en) | 1999-07-09 | 1999-07-09 | Edge bead removal/spin rinse dry (EBR/SRD) module |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
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---|---|
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9815092B2 (en) | 2013-07-04 | 2017-11-14 | Kaijo Corporation | Ultrasonic cleaning apparatus |
Families Citing this family (221)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3395696B2 (ja) * | 1999-03-15 | 2003-04-14 | 日本電気株式会社 | ウェハ処理装置およびウェハ処理方法 |
US7780867B1 (en) * | 1999-10-01 | 2010-08-24 | Novellus Systems, Inc. | Edge bevel removal of copper from silicon wafers |
KR100436361B1 (ko) * | 2000-12-15 | 2004-06-18 | (주)케이.씨.텍 | 기판 가장자리를 세정하기 위한 장치 |
JP2002353181A (ja) * | 2001-05-30 | 2002-12-06 | Ses Co Ltd | 枚葉式基板洗浄方法および枚葉式基板洗浄装置 |
JP4743735B2 (ja) * | 2001-05-30 | 2011-08-10 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
JP2003006948A (ja) * | 2001-06-15 | 2003-01-10 | Fuji Photo Film Co Ltd | 光情報記録媒体の製造方法 |
JP3944368B2 (ja) * | 2001-09-05 | 2007-07-11 | 株式会社荏原製作所 | 基板処理装置及び基板処理方法 |
US6708701B2 (en) * | 2001-10-16 | 2004-03-23 | Applied Materials Inc. | Capillary ring |
US6786996B2 (en) | 2001-10-16 | 2004-09-07 | Applied Materials Inc. | Apparatus and method for edge bead removal |
US7138014B2 (en) * | 2002-01-28 | 2006-11-21 | Applied Materials, Inc. | Electroless deposition apparatus |
US20030190426A1 (en) * | 2002-04-03 | 2003-10-09 | Deenesh Padhi | Electroless deposition method |
US6905622B2 (en) * | 2002-04-03 | 2005-06-14 | Applied Materials, Inc. | Electroless deposition method |
US6899816B2 (en) * | 2002-04-03 | 2005-05-31 | Applied Materials, Inc. | Electroless deposition method |
US20030207206A1 (en) * | 2002-04-22 | 2003-11-06 | General Electric Company | Limited play data storage media and method for limiting access to data thereon |
JP4017463B2 (ja) * | 2002-07-11 | 2007-12-05 | 株式会社荏原製作所 | 洗浄方法 |
KR100518765B1 (ko) * | 2002-08-01 | 2005-10-05 | 주식회사 에이알티 | 웨이퍼 식각 장치 |
US6821909B2 (en) * | 2002-10-30 | 2004-11-23 | Applied Materials, Inc. | Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application |
US20070232072A1 (en) * | 2003-04-18 | 2007-10-04 | Bo Zheng | Formation of protection layer on wafer to prevent stain formation |
US7827930B2 (en) * | 2004-01-26 | 2010-11-09 | Applied Materials, Inc. | Apparatus for electroless deposition of metals onto semiconductor substrates |
US7654221B2 (en) * | 2003-10-06 | 2010-02-02 | Applied Materials, Inc. | Apparatus for electroless deposition of metals onto semiconductor substrates |
US20070111519A1 (en) * | 2003-10-15 | 2007-05-17 | Applied Materials, Inc. | Integrated electroless deposition system |
US7465358B2 (en) * | 2003-10-15 | 2008-12-16 | Applied Materials, Inc. | Measurement techniques for controlling aspects of a electroless deposition process |
US7064065B2 (en) * | 2003-10-15 | 2006-06-20 | Applied Materials, Inc. | Silver under-layers for electroless cobalt alloys |
US20050095830A1 (en) * | 2003-10-17 | 2005-05-05 | Applied Materials, Inc. | Selective self-initiating electroless capping of copper with cobalt-containing alloys |
WO2005038084A2 (en) * | 2003-10-17 | 2005-04-28 | Applied Materials, Inc. | Selective self-initiating electroless capping of copper with cobalt-containing alloys |
US7476290B2 (en) * | 2003-10-30 | 2009-01-13 | Ebara Corporation | Substrate processing apparatus and substrate processing method |
US7205233B2 (en) * | 2003-11-07 | 2007-04-17 | Applied Materials, Inc. | Method for forming CoWRe alloys by electroless deposition |
US20060003570A1 (en) * | 2003-12-02 | 2006-01-05 | Arulkumar Shanmugasundram | Method and apparatus for electroless capping with vapor drying |
US20050181226A1 (en) * | 2004-01-26 | 2005-08-18 | Applied Materials, Inc. | Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber |
US20050170650A1 (en) * | 2004-01-26 | 2005-08-04 | Hongbin Fang | Electroless palladium nitrate activation prior to cobalt-alloy deposition |
US20050161338A1 (en) * | 2004-01-26 | 2005-07-28 | Applied Materials, Inc. | Electroless cobalt alloy deposition process |
US20060033678A1 (en) * | 2004-01-26 | 2006-02-16 | Applied Materials, Inc. | Integrated electroless deposition system |
US20050230350A1 (en) | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
US7371312B2 (en) * | 2004-03-31 | 2008-05-13 | Intel Corporation | Using cell voltage as a monitor for deposition coverage |
US20050253268A1 (en) * | 2004-04-22 | 2005-11-17 | Shao-Ta Hsu | Method and structure for improving adhesion between intermetal dielectric layer and cap layer |
KR100568873B1 (ko) * | 2004-11-30 | 2006-04-10 | 삼성전자주식회사 | 웨이퍼의 에지 비드 스트립용 노즐장치 |
US20060240187A1 (en) * | 2005-01-27 | 2006-10-26 | Applied Materials, Inc. | Deposition of an intermediate catalytic layer on a barrier layer for copper metallization |
WO2006102318A2 (en) * | 2005-03-18 | 2006-09-28 | Applied Materials, Inc. | Electroless deposition process on a contact containing silicon or silicide |
US7651934B2 (en) | 2005-03-18 | 2010-01-26 | Applied Materials, Inc. | Process for electroless copper deposition |
US20060246699A1 (en) * | 2005-03-18 | 2006-11-02 | Weidman Timothy W | Process for electroless copper deposition on a ruthenium seed |
US20060252252A1 (en) * | 2005-03-18 | 2006-11-09 | Zhize Zhu | Electroless deposition processes and compositions for forming interconnects |
US20060211237A1 (en) | 2005-03-21 | 2006-09-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for planarizing gap-filling material |
JP4237184B2 (ja) * | 2005-03-31 | 2009-03-11 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
US7691559B2 (en) * | 2005-06-30 | 2010-04-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography edge bead removal |
US20070071888A1 (en) * | 2005-09-21 | 2007-03-29 | Arulkumar Shanmugasundram | Method and apparatus for forming device features in an integrated electroless deposition system |
US20070099806A1 (en) * | 2005-10-28 | 2007-05-03 | Stewart Michael P | Composition and method for selectively removing native oxide from silicon-containing surfaces |
US20070099422A1 (en) * | 2005-10-28 | 2007-05-03 | Kapila Wijekoon | Process for electroless copper deposition |
US20070209684A1 (en) * | 2006-03-07 | 2007-09-13 | Applied Materials, Inc. | Copper deposition chamber having integrated bevel clean with edge bevel removal detection |
JP2009530865A (ja) * | 2006-03-24 | 2009-08-27 | アプライド マテリアルズ インコーポレイテッド | 基板の洗浄方法及び装置 |
US8100081B1 (en) | 2006-06-30 | 2012-01-24 | Novellus Systems, Inc. | Edge removal of films using externally generated plasma species |
KR100829923B1 (ko) * | 2006-08-30 | 2008-05-16 | 세메스 주식회사 | 스핀헤드 및 이를 이용하는 기판처리방법 |
US8580078B2 (en) | 2007-01-26 | 2013-11-12 | Lam Research Corporation | Bevel etcher with vacuum chuck |
US9732416B1 (en) * | 2007-04-18 | 2017-08-15 | Novellus Systems, Inc. | Wafer chuck with aerodynamic design for turbulence reduction |
US8174800B2 (en) * | 2007-05-07 | 2012-05-08 | Canon Anelva Corporation | Magnetoresistive element, method of manufacturing the same, and magnetic multilayered film manufacturing apparatus |
JP4593601B2 (ja) * | 2007-08-03 | 2010-12-08 | キヤノンアネルバ株式会社 | 汚染物質除去方法、半導体製造方法、及び薄膜形成加工装置 |
JP4819010B2 (ja) * | 2007-09-04 | 2011-11-16 | 東京エレクトロン株式会社 | 処理装置、処理方法および記憶媒体 |
US7867900B2 (en) | 2007-09-28 | 2011-01-11 | Applied Materials, Inc. | Aluminum contact integration on cobalt silicide junction |
US8419964B2 (en) * | 2008-08-27 | 2013-04-16 | Novellus Systems, Inc. | Apparatus and method for edge bevel removal of copper from silicon wafers |
US8172646B2 (en) * | 2009-02-27 | 2012-05-08 | Novellus Systems, Inc. | Magnetically actuated chuck for edge bevel removal |
JP5840612B2 (ja) | 2009-09-21 | 2016-01-06 | ノボ・ノルデイスク・エー/エス | 針カニューレの化学エッチングのための方法 |
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
DE102010017751A1 (de) * | 2010-07-06 | 2012-01-12 | Infineon Technologies Bipolar Gmbh & Co. Kg | Verfahren und Vorrichtung zur Herstellung einer Randstruktur eines Halbleiterbauelements |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8771539B2 (en) | 2011-02-22 | 2014-07-08 | Applied Materials, Inc. | Remotely-excited fluorine and water vapor etch |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US9421617B2 (en) | 2011-06-22 | 2016-08-23 | Tel Nexx, Inc. | Substrate holder |
US8613474B2 (en) | 2011-07-06 | 2013-12-24 | Tel Nexx, Inc. | Substrate loader and unloader having a Bernoulli support |
US8771536B2 (en) | 2011-08-01 | 2014-07-08 | Applied Materials, Inc. | Dry-etch for silicon-and-carbon-containing films |
US8679982B2 (en) | 2011-08-26 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and oxygen |
US8679983B2 (en) | 2011-09-01 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and nitrogen |
US8927390B2 (en) | 2011-09-26 | 2015-01-06 | Applied Materials, Inc. | Intrench profile |
US8808563B2 (en) | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
WO2013070436A1 (en) | 2011-11-08 | 2013-05-16 | Applied Materials, Inc. | Methods of reducing substrate dislocation during gapfill processing |
JP5891085B2 (ja) * | 2012-03-27 | 2016-03-22 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9034770B2 (en) | 2012-09-17 | 2015-05-19 | Applied Materials, Inc. | Differential silicon oxide etch |
US9023734B2 (en) | 2012-09-18 | 2015-05-05 | Applied Materials, Inc. | Radical-component oxide etch |
US9390937B2 (en) | 2012-09-20 | 2016-07-12 | Applied Materials, Inc. | Silicon-carbon-nitride selective etch |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US8765574B2 (en) | 2012-11-09 | 2014-07-01 | Applied Materials, Inc. | Dry etch process |
US8969212B2 (en) | 2012-11-20 | 2015-03-03 | Applied Materials, Inc. | Dry-etch selectivity |
US8980763B2 (en) | 2012-11-30 | 2015-03-17 | Applied Materials, Inc. | Dry-etch for selective tungsten removal |
US9064816B2 (en) | 2012-11-30 | 2015-06-23 | Applied Materials, Inc. | Dry-etch for selective oxidation removal |
US9111877B2 (en) | 2012-12-18 | 2015-08-18 | Applied Materials, Inc. | Non-local plasma oxide etch |
US8921234B2 (en) | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
US8801952B1 (en) | 2013-03-07 | 2014-08-12 | Applied Materials, Inc. | Conformal oxide dry etch |
US10170282B2 (en) | 2013-03-08 | 2019-01-01 | Applied Materials, Inc. | Insulated semiconductor faceplate designs |
US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US8895449B1 (en) | 2013-05-16 | 2014-11-25 | Applied Materials, Inc. | Delicate dry clean |
US9114438B2 (en) | 2013-05-21 | 2015-08-25 | Applied Materials, Inc. | Copper residue chamber clean |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
US8956980B1 (en) | 2013-09-16 | 2015-02-17 | Applied Materials, Inc. | Selective etch of silicon nitride |
US8951429B1 (en) | 2013-10-29 | 2015-02-10 | Applied Materials, Inc. | Tungsten oxide processing |
US9236265B2 (en) | 2013-11-04 | 2016-01-12 | Applied Materials, Inc. | Silicon germanium processing |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
JP6064875B2 (ja) * | 2013-11-25 | 2017-01-25 | 東京エレクトロン株式会社 | 液処理装置、液処理方法及び記憶媒体 |
US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
US9117855B2 (en) | 2013-12-04 | 2015-08-25 | Applied Materials, Inc. | Polarity control for remote plasma |
US9263278B2 (en) | 2013-12-17 | 2016-02-16 | Applied Materials, Inc. | Dopant etch selectivity control |
US9287095B2 (en) | 2013-12-17 | 2016-03-15 | Applied Materials, Inc. | Semiconductor system assemblies and methods of operation |
US9190293B2 (en) | 2013-12-18 | 2015-11-17 | Applied Materials, Inc. | Even tungsten etch for high aspect ratio trenches |
US9287134B2 (en) | 2014-01-17 | 2016-03-15 | Applied Materials, Inc. | Titanium oxide etch |
US9396989B2 (en) | 2014-01-27 | 2016-07-19 | Applied Materials, Inc. | Air gaps between copper lines |
US9293568B2 (en) | 2014-01-27 | 2016-03-22 | Applied Materials, Inc. | Method of fin patterning |
US9385028B2 (en) | 2014-02-03 | 2016-07-05 | Applied Materials, Inc. | Air gap process |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
US9299575B2 (en) | 2014-03-17 | 2016-03-29 | Applied Materials, Inc. | Gas-phase tungsten etch |
US9299538B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9136273B1 (en) | 2014-03-21 | 2015-09-15 | Applied Materials, Inc. | Flash gate air gap |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9269590B2 (en) | 2014-04-07 | 2016-02-23 | Applied Materials, Inc. | Spacer formation |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9847289B2 (en) | 2014-05-30 | 2017-12-19 | Applied Materials, Inc. | Protective via cap for improved interconnect performance |
US9378969B2 (en) | 2014-06-19 | 2016-06-28 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
US9406523B2 (en) | 2014-06-19 | 2016-08-02 | Applied Materials, Inc. | Highly selective doped oxide removal method |
US9425058B2 (en) | 2014-07-24 | 2016-08-23 | Applied Materials, Inc. | Simplified litho-etch-litho-etch process |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9159606B1 (en) | 2014-07-31 | 2015-10-13 | Applied Materials, Inc. | Metal air gap |
US9378978B2 (en) | 2014-07-31 | 2016-06-28 | Applied Materials, Inc. | Integrated oxide recess and floating gate fin trimming |
US9165786B1 (en) | 2014-08-05 | 2015-10-20 | Applied Materials, Inc. | Integrated oxide and nitride recess for better channel contact in 3D architectures |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9355856B2 (en) | 2014-09-12 | 2016-05-31 | Applied Materials, Inc. | V trench dry etch |
US9478434B2 (en) | 2014-09-24 | 2016-10-25 | Applied Materials, Inc. | Chlorine-based hardmask removal |
US9368364B2 (en) | 2014-09-24 | 2016-06-14 | Applied Materials, Inc. | Silicon etch process with tunable selectivity to SiO2 and other materials |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US9299583B1 (en) | 2014-12-05 | 2016-03-29 | Applied Materials, Inc. | Aluminum oxide selective etch |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
US9343272B1 (en) | 2015-01-08 | 2016-05-17 | Applied Materials, Inc. | Self-aligned process |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9373522B1 (en) | 2015-01-22 | 2016-06-21 | Applied Mateials, Inc. | Titanium nitride removal |
US9449846B2 (en) | 2015-01-28 | 2016-09-20 | Applied Materials, Inc. | Vertical gate separation |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
JP7024307B2 (ja) * | 2017-01-26 | 2022-02-24 | 東京エレクトロン株式会社 | 塗布膜除去装置、塗布膜除去方法及び記憶媒体 |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10875149B2 (en) * | 2017-03-30 | 2020-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for timed dispensing various slurry components |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
JP7364322B2 (ja) * | 2018-02-23 | 2023-10-18 | 株式会社荏原製作所 | 基板洗浄装置および基板洗浄方法 |
TWI716818B (zh) | 2018-02-28 | 2021-01-21 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
EP3594748B1 (en) | 2018-07-09 | 2021-04-14 | C&D Semiconductor Services. Inc | Optimal exposure of a bottom surface of a substrate material and/or edges thereof for cleaning in a spin coating device |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
JP7309485B2 (ja) * | 2019-07-04 | 2023-07-18 | 東京エレクトロン株式会社 | エッチング装置およびエッチング方法 |
DE102021116206B3 (de) | 2021-06-23 | 2022-09-29 | Infineon Technologies Bipolar Gmbh & Co. Kg | Verfahren und Vorrichtung zur Herstellung einer Randstruktur eines Halbleiterbauelements |
KR102573825B1 (ko) | 2023-05-15 | 2023-09-04 | 주식회사 기술공작소바다 | 이비알 장치 |
Family Cites Families (106)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3727620A (en) | 1970-03-18 | 1973-04-17 | Fluoroware Of California Inc | Rinsing and drying device |
US3772105A (en) | 1970-07-24 | 1973-11-13 | Shipley Co | Continuous etching process |
US3770598A (en) | 1972-01-21 | 1973-11-06 | Oxy Metal Finishing Corp | Electrodeposition of copper from acid baths |
US4027686A (en) | 1973-01-02 | 1977-06-07 | Texas Instruments Incorporated | Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water |
SE444822B (sv) | 1975-03-11 | 1986-05-12 | Oxy Metal Industries Corp | Bad och medel for elektrolytisk utfellning av koppar |
US3953265A (en) * | 1975-04-28 | 1976-04-27 | International Business Machines Corporation | Meniscus-contained method of handling fluids in the manufacture of semiconductor wafers |
US3990462A (en) * | 1975-05-19 | 1976-11-09 | Fluoroware Systems Corporation | Substrate stripping and cleaning apparatus |
JPS5271871A (en) | 1975-12-11 | 1977-06-15 | Nec Corp | Washing apparatus |
JPS5819350B2 (ja) | 1976-04-08 | 1983-04-18 | 富士写真フイルム株式会社 | スピンコ−テイング方法 |
US4326940A (en) | 1979-05-21 | 1982-04-27 | Rohco Incorporated | Automatic analyzer and control system for electroplating baths |
US4315059A (en) | 1980-07-18 | 1982-02-09 | The United States Of America As Represented By The United States Department Of Energy | Molten salt lithium cells |
US4405416A (en) | 1980-07-18 | 1983-09-20 | Raistrick Ian D | Molten salt lithium cells |
US4336114A (en) | 1981-03-26 | 1982-06-22 | Hooker Chemicals & Plastics Corp. | Electrodeposition of bright copper |
US4376685A (en) | 1981-06-24 | 1983-03-15 | M&T Chemicals Inc. | Acid copper electroplating baths containing brightening and leveling additives |
EP0076569B1 (en) | 1981-10-01 | 1986-08-27 | EMI Limited | Electroplating arrangements |
US4429983A (en) * | 1982-03-22 | 1984-02-07 | International Business Machines Corporation | Developing apparatus for exposed photoresist coated wafers |
US4439243A (en) * | 1982-08-03 | 1984-03-27 | Texas Instruments Incorporated | Apparatus and method of material removal with fluid flow within a slot |
US4838289A (en) * | 1982-08-03 | 1989-06-13 | Texas Instruments Incorporated | Apparatus and method for edge cleaning |
US4439244A (en) | 1982-08-03 | 1984-03-27 | Texas Instruments Incorporated | Apparatus and method of material removal having a fluid filled slot |
US4489740A (en) | 1982-12-27 | 1984-12-25 | General Signal Corporation | Disc cleaning machine |
US4510176A (en) * | 1983-09-26 | 1985-04-09 | At&T Bell Laboratories | Removal of coating from periphery of a semiconductor wafer |
US4518678A (en) | 1983-12-16 | 1985-05-21 | Advanced Micro Devices, Inc. | Selective removal of coating material on a coated substrate |
JPS60210840A (ja) * | 1984-03-06 | 1985-10-23 | Fujitsu Ltd | スピン処理装置 |
US4519846A (en) | 1984-03-08 | 1985-05-28 | Seiichiro Aigo | Process for washing and drying a semiconductor element |
JPS61279858A (ja) * | 1985-06-05 | 1986-12-10 | Mitsubishi Electric Corp | ネガレジスト現像装置 |
US4693805A (en) | 1986-02-14 | 1987-09-15 | Boe Limited | Method and apparatus for sputtering a dielectric target or for reactive sputtering |
JPS62287625A (ja) * | 1986-06-06 | 1987-12-14 | Hitachi Ltd | スピン式エッチング装置 |
US4788994A (en) * | 1986-08-13 | 1988-12-06 | Dainippon Screen Mfg. Co. | Wafer holding mechanism |
US4732785A (en) | 1986-09-26 | 1988-03-22 | Motorola, Inc. | Edge bead removal process for spin on films |
FR2623134B1 (fr) | 1987-11-13 | 1991-08-02 | Salem Ali | Procede technique de decoupe et d'ajourage de plaques metalliques en vue de leur reproduction et incrustation |
US5235995A (en) | 1989-03-27 | 1993-08-17 | Semitool, Inc. | Semiconductor processor apparatus with dynamic wafer vapor treatment and particulate volatilization |
US5230743A (en) | 1988-05-25 | 1993-07-27 | Semitool, Inc. | Method for single wafer processing in which a semiconductor wafer is contacted with a fluid |
US5224504A (en) | 1988-05-25 | 1993-07-06 | Semitool, Inc. | Single wafer processor |
US5092975A (en) | 1988-06-14 | 1992-03-03 | Yamaha Corporation | Metal plating apparatus |
JPH01316936A (ja) | 1988-06-17 | 1989-12-21 | Toshiba Corp | 半導体基板エッチング処理装置 |
US5316974A (en) | 1988-12-19 | 1994-05-31 | Texas Instruments Incorporated | Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer |
JPH02253620A (ja) * | 1989-03-28 | 1990-10-12 | Oki Electric Ind Co Ltd | 半導体基板の洗浄装置 |
JP2803143B2 (ja) * | 1989-04-14 | 1998-09-24 | カシオ計算機株式会社 | 半導体ウエハのメッキ前処理方法 |
JPH02309638A (ja) * | 1989-05-24 | 1990-12-25 | Fujitsu Ltd | ウエハーエッチング装置 |
US5039381A (en) | 1989-05-25 | 1991-08-13 | Mullarkey Edward J | Method of electroplating a precious metal on a semiconductor device, integrated circuit or the like |
US5162260A (en) | 1989-06-01 | 1992-11-10 | Hewlett-Packard Company | Stacked solid via formation in integrated circuit systems |
US5055425A (en) | 1989-06-01 | 1991-10-08 | Hewlett-Packard Company | Stacked solid via formation in integrated circuit systems |
US5155336A (en) | 1990-01-19 | 1992-10-13 | Applied Materials, Inc. | Rapid thermal heating apparatus and method |
JP2841618B2 (ja) | 1990-01-25 | 1998-12-24 | 日本電気株式会社 | ウェットエッチング装置 |
US5222310A (en) | 1990-05-18 | 1993-06-29 | Semitool, Inc. | Single wafer processor with a frame |
US5259407A (en) | 1990-06-15 | 1993-11-09 | Matrix Inc. | Surface treatment method and apparatus for a semiconductor wafer |
US5252807A (en) | 1990-07-02 | 1993-10-12 | George Chizinsky | Heated plate rapid thermal processor |
US5256274A (en) | 1990-08-01 | 1993-10-26 | Jaime Poris | Selective metal electrodeposition process |
US5368711A (en) | 1990-08-01 | 1994-11-29 | Poris; Jaime | Selective metal electrodeposition process and apparatus |
JPH0810686B2 (ja) * | 1990-09-14 | 1996-01-31 | 株式会社東芝 | 半導体基板エッチング処理装置 |
CA2059841A1 (en) | 1991-01-24 | 1992-07-25 | Ichiro Hayashida | Surface treating solutions and cleaning method |
JP2665404B2 (ja) * | 1991-02-18 | 1997-10-22 | シャープ株式会社 | 半導体装置の製造方法 |
DE4109955A1 (de) | 1991-03-26 | 1992-10-01 | Siemens Ag | Verfahren zum nasschemischen aetzen einer wolframrueckseitenbeschichtung auf einer halbleiterscheibe |
JPH04363022A (ja) * | 1991-06-06 | 1992-12-15 | Enya Syst:Kk | 貼付板洗浄装置 |
JPH0513322A (ja) * | 1991-07-09 | 1993-01-22 | Ryoden Semiconductor Syst Eng Kk | 被膜溶剤塗布装置 |
JPH06124887A (ja) * | 1991-09-27 | 1994-05-06 | Sony Corp | 半導体装置の製造方法及びこれに使用できる基板洗浄装置 |
JPH0715897B2 (ja) | 1991-11-20 | 1995-02-22 | 株式会社エンヤシステム | ウエ−ハ端面エッチング方法及び装置 |
JPH05160104A (ja) | 1991-12-05 | 1993-06-25 | Fujitsu Ltd | 半導体ウェーハのウェット処理方法及びウェット処理装置 |
DE4202194C2 (de) | 1992-01-28 | 1996-09-19 | Fairchild Convac Gmbh Geraete | Verfahren und Vorrichtung zum partiellen Entfernen von dünnen Schichten von einem Substrat |
JP2528413B2 (ja) * | 1992-02-03 | 1996-08-28 | オリジン電気株式会社 | 不要塗膜の剥離方法及び装置 |
JP2654314B2 (ja) | 1992-06-04 | 1997-09-17 | 東京応化工業株式会社 | 裏面洗浄装置 |
JPH0617291A (ja) | 1992-07-03 | 1994-01-25 | Nec Corp | 金属めっき装置 |
US5328589A (en) | 1992-12-23 | 1994-07-12 | Enthone-Omi, Inc. | Functional fluid additives for acid copper electroplating baths |
US5718813A (en) | 1992-12-30 | 1998-02-17 | Advanced Energy Industries, Inc. | Enhanced reactive DC sputtering system |
JP3277404B2 (ja) * | 1993-03-31 | 2002-04-22 | ソニー株式会社 | 基板洗浄方法及び基板洗浄装置 |
JP3247211B2 (ja) | 1993-08-02 | 2002-01-15 | 富士通株式会社 | 配線用銅膜表面の酸化銅除去方法 |
US5608943A (en) | 1993-08-23 | 1997-03-11 | Tokyo Electron Limited | Apparatus for removing process liquid |
US5415890A (en) | 1994-01-03 | 1995-05-16 | Eaton Corporation | Modular apparatus and method for surface treatment of parts with liquid baths |
US5625170A (en) | 1994-01-18 | 1997-04-29 | Nanometrics Incorporated | Precision weighing to monitor the thickness and uniformity of deposited or etched thin film |
JP3377849B2 (ja) | 1994-02-02 | 2003-02-17 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | ウエーハ用メッキ装置 |
US5651865A (en) | 1994-06-17 | 1997-07-29 | Eni | Preferential sputtering of insulators from conductive targets |
US5753133A (en) * | 1994-07-11 | 1998-05-19 | Applied Komatsu Technology, Inc. | Method and apparatus for etching film layers on large substrates |
JPH0837143A (ja) | 1994-07-25 | 1996-02-06 | Fuji Xerox Co Ltd | 半導体処理装置 |
KR960006409U (ko) * | 1994-07-26 | 1996-02-17 | 무선전화기의 안테나 장착 장치 | |
US5705223A (en) | 1994-07-26 | 1998-01-06 | International Business Machine Corp. | Method and apparatus for coating a semiconductor wafer |
JPH0878378A (ja) * | 1994-09-08 | 1996-03-22 | Toshiba Corp | 半導体基板の表面処理方法 |
JPH08195370A (ja) * | 1995-01-13 | 1996-07-30 | Sony Corp | エッジクリーン方法 |
JP3137873B2 (ja) | 1995-06-27 | 2001-02-26 | 株式会社日立製作所 | 半導体ウェハシールエッチング装置 |
JPH0969509A (ja) * | 1995-09-01 | 1997-03-11 | Matsushita Electron Corp | 半導体ウェーハの洗浄・エッチング・乾燥装置及びその使用方法 |
JP3447869B2 (ja) * | 1995-09-20 | 2003-09-16 | 株式会社荏原製作所 | 洗浄方法及び装置 |
US5807469A (en) | 1995-09-27 | 1998-09-15 | Intel Corporation | Flexible continuous cathode contact circuit for electrolytic plating of C4, tab microbumps, and ultra large scale interconnects |
JPH09298181A (ja) * | 1996-05-07 | 1997-11-18 | Tokyo Ohka Kogyo Co Ltd | 基板の裏面洗浄装置 |
US5997653A (en) * | 1996-10-07 | 1999-12-07 | Tokyo Electron Limited | Method for washing and drying substrates |
US6114254A (en) * | 1996-10-15 | 2000-09-05 | Micron Technology, Inc. | Method for removing contaminants from a semiconductor wafer |
US5937469A (en) * | 1996-12-03 | 1999-08-17 | Intel Corporation | Apparatus for mechanically cleaning the edges of wafers |
TW345681B (en) * | 1996-12-13 | 1998-11-21 | Taiwan Semiconductor Mfg Co Ltd | Method for removing covering layer on the peripheral edge portion of wafer |
KR19980065672A (ko) * | 1997-01-14 | 1998-10-15 | 김광호 | 기판 에지 불순물 제거 방법 |
JP3300624B2 (ja) * | 1997-01-24 | 2002-07-08 | 東京エレクトロン株式会社 | 基板端面の洗浄方法 |
KR100249309B1 (ko) * | 1997-02-28 | 2000-03-15 | 윤종용 | 반도체 제조용 포토 레지스트 코팅 장치 |
TW419716B (en) * | 1997-04-28 | 2001-01-21 | Tokyo Electron Ltd | Processing apparatus |
AT407806B (de) * | 1997-05-23 | 2001-06-25 | Sez Semiconduct Equip Zubehoer | Anordnung zum behandeln wafer-förmiger gegenstände, insbesondere von siliziumwafern |
US5783097A (en) * | 1997-06-09 | 1998-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process to avoid dielectric damage at the flat edge of the water |
US6017437A (en) | 1997-08-22 | 2000-01-25 | Cutek Research, Inc. | Process chamber and method for depositing and/or removing material on a substrate |
JP3469788B2 (ja) * | 1997-08-26 | 2003-11-25 | 東京エレクトロン株式会社 | 薄膜除去方法及びその装置 |
TW385489B (en) * | 1997-08-26 | 2000-03-21 | Tokyo Electron Ltd | Method for processing substrate and device of processing device |
US6159354A (en) | 1997-11-13 | 2000-12-12 | Novellus Systems, Inc. | Electric potential shaping method for electroplating |
US6179983B1 (en) | 1997-11-13 | 2001-01-30 | Novellus Systems, Inc. | Method and apparatus for treating surface including virtual anode |
US5897379A (en) * | 1997-12-19 | 1999-04-27 | Sharp Microelectronics Technology, Inc. | Low temperature system and method for CVD copper removal |
US6117778A (en) * | 1998-02-11 | 2000-09-12 | International Business Machines Corporation | Semiconductor wafer edge bead removal method and tool |
JPH11288903A (ja) * | 1998-04-03 | 1999-10-19 | Memc Kk | シリコンウエハのエッジ鏡面化方法 |
KR100616198B1 (ko) | 1998-04-21 | 2006-08-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판상에 전기도금하는 전기화학적 증착 시스템 및 방법 |
US6290865B1 (en) | 1998-11-30 | 2001-09-18 | Applied Materials, Inc. | Spin-rinse-drying process for electroplated semiconductor wafers |
US6254760B1 (en) | 1999-03-05 | 2001-07-03 | Applied Materials, Inc. | Electro-chemical deposition system and method |
US6258220B1 (en) | 1998-11-30 | 2001-07-10 | Applied Materials, Inc. | Electro-chemical deposition system |
JP3395696B2 (ja) * | 1999-03-15 | 2003-04-14 | 日本電気株式会社 | ウェハ処理装置およびウェハ処理方法 |
US6309981B1 (en) | 1999-10-01 | 2001-10-30 | Novellus Systems, Inc. | Edge bevel removal of copper from silicon wafers |
-
1999
- 1999-07-09 US US09/350,212 patent/US6516815B1/en not_active Expired - Fee Related
-
2000
- 2000-07-05 EP EP00305662A patent/EP1067591A3/en not_active Withdrawn
- 2000-07-06 TW TW089113447A patent/TW455920B/zh not_active IP Right Cessation
- 2000-07-07 KR KR1020000038869A patent/KR100717445B1/ko not_active IP Right Cessation
- 2000-07-07 SG SG200003818A patent/SG80684A1/en unknown
- 2000-07-07 JP JP2000245286A patent/JP4603136B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9815092B2 (en) | 2013-07-04 | 2017-11-14 | Kaijo Corporation | Ultrasonic cleaning apparatus |
Also Published As
Publication number | Publication date |
---|---|
SG80684A1 (en) | 2001-05-22 |
JP2001135612A (ja) | 2001-05-18 |
KR100717445B1 (ko) | 2007-05-14 |
US6516815B1 (en) | 2003-02-11 |
EP1067591A3 (en) | 2004-03-24 |
KR20010049738A (ko) | 2001-06-15 |
EP1067591A2 (en) | 2001-01-10 |
JP4603136B2 (ja) | 2010-12-22 |
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