US20040149584A1 - Plating method - Google Patents
Plating method Download PDFInfo
- Publication number
- US20040149584A1 US20040149584A1 US10/742,767 US74276703A US2004149584A1 US 20040149584 A1 US20040149584 A1 US 20040149584A1 US 74276703 A US74276703 A US 74276703A US 2004149584 A1 US2004149584 A1 US 2004149584A1
- Authority
- US
- United States
- Prior art keywords
- substrate
- plating
- plating solution
- anode electrode
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000007747 plating Methods 0.000 title claims abstract description 354
- 238000000034 method Methods 0.000 title claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 303
- 238000011049 filling Methods 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 11
- 239000004020 conductor Substances 0.000 abstract description 6
- 239000010949 copper Substances 0.000 description 78
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 77
- 229910052802 copper Inorganic materials 0.000 description 76
- 238000012545 processing Methods 0.000 description 32
- 238000012546 transfer Methods 0.000 description 24
- 239000011248 coating agent Substances 0.000 description 23
- 238000000576 coating method Methods 0.000 description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- 230000002093 peripheral effect Effects 0.000 description 14
- 238000004140 cleaning Methods 0.000 description 11
- 239000007788 liquid Substances 0.000 description 11
- 238000003825 pressing Methods 0.000 description 11
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 238000011068 loading method Methods 0.000 description 9
- 238000007789 sealing Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000001035 drying Methods 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 230000001590 oxidative effect Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000000654 additive Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 229910000365 copper sulfate Inorganic materials 0.000 description 5
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000004448 titration Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000006259 organic additive Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000005708 Sodium hypochlorite Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000002198 insoluble material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004811 liquid chromatography Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000003969 polarography Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Automation & Control Theory (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
An object of the present invention is to provide a plating method which can form defect-free, completely-embedded interconnects of a conductive material in recesses in the surface of a substrate even when the recesses are of a high aspect ratio, and which can improve the flatness of a plated film on the substrate even when narrow trenches and broad trenches are co-present in the surface of the substrate. A plating method according to the present invention includes: providing a high resistance structure between a surface of a substrate, said surface being connected to a cathode electrode, and an anode electrode; filling the space between the substrate and the anode electrode with a plating solution while applying a voltage between the cathode electrode and the anode electrode; and growing a plated film on the surface of the substrate while controlling an electric current flowing between the cathode electrode and the anode electrode at a constant value.
Description
- 1. Field of the Invention
- The present invention relates to a plating method, and more particularly to a plating method for filling a conductive metal such as copper (Cu) or the like in fine interconnection patterns (recesses) formed in a substrate such as a semiconductor wafer to form interconnects.
- 2. Description of the Related Art
- In recent years, instead of using aluminum or aluminum alloys as a material for forming interconnection circuits on a semiconductor substrate, there is an eminent movement towards using copper (Cu) that has a low electric resistivity and high electromigration endurance. Copper interconnects are generally formed by filling copper into fine recesses formed in the surface of a substrate. Various techniques for forming such copper interconnects are known, including CVD, sputtering, and plating. According to any such techniques, a copper film is formed in the substantially entire surface of a substrate, followed by removal of unnecessary copper by performing chemical mechanical polishing (CMP).
- FIGS. 21A through 21C illustrate, in sequence of basic process steps, an example for producing a semiconductor device having copper interconnects by performing copper plating onto a surface of a substrate. As shown in FIG. 21A, an
insulating film 2, such as a silicon oxide film of SiO2 or a film of low-k material, is deposited on aconductive layer 1 a in which electronic devices are formed, which is formed on asemiconductor base 1.Fine recesses 5 composed ofcontact holes 3 andtrenches 4 for interconnects are formed in theinsulating film 2 by a lithography/etching technique. Abarrier layer 6 of TaN or the like is formed on the entire surface of theinsulating film 2. - Then, as shown in FIG. 21B, copper plating is performed onto a surface of the semiconductor substrate W to fill the recesses (holes)5 of the semiconductor substrate W with copper and, at the same time, deposit a
copper film 7 on thebarrier layer 6. Thereafter, thecopper film 7 and thebarrier layer 6 on theinsulating film 2 are removed by performing chemical mechanical polishing (CMP) so as to make the surface of the copper filled in thecontact holes 3 and thetrenches 4 for interconnects and the surface of theinsulating film 2 lie substantially on the same plane. Embedded interconnects composed of thecopper film 7, as shown in FIG. 21C, are thus formed. - In the embedding of
copper film 7 e.g. by an electroplating method in thefine recesses 5 provided in the surface of the semiconductor substrate W, it is widely practiced, in advance of the copper plating, to form aseed layer 8 e.g. by sputtering or CVD on the surface of thebarrier layer 6 formed in the surface of the semiconductor substrate W, as shown in FIG. 22. The main objective of theseed layer 8 is to make the surface of theseed layer 8 serve as an electrical cathode to supply a sufficient electrical current for reducing metal ions in a plating solution and depositing the metal ions as a solid metal. - The
seed layer 8 is formed usually by sputtering, CVD or the like. As interconnects are now becoming highly densified and finer, the aspect ratios of contact holes and via holes are becoming higher. For example, as shown in FIG. 22, when aseed layer 8 e.g. of copper is formed over a recess (hole) 5 having a diameter of about 0.15 μm and an aspect ratio of about 6, the ratio B1/A1(side coverage), i.e. the ratio of the film thickness B1 of theseed layer 8 on the internal side surface of therecess 5 to the film thickness A1 of theseed layer 8 on the external surface of the substrate W, is about 5 to 10%. Further, in this case, it is difficult to form acontinuous seed layer 8. This is considered to be partly due to cohesion of sputtered copper atoms upon film formation. In addition, there is a current tendency that the film thickness A1 of theseed layer 8 on the external substrate surface is becoming as thin as no more than 80-100 nm, particularly even no more than 40-60 nm, and accordingly, the film thickness B1 of theseed layer 8 on the internal side surface of therecess 5 is also becoming thinner. - A plating solution, in general, is composed of copper sulfate, sulfuric acid, chlorine and several types of additives, and is strongly acidic. Thus, a plating solution has the nature of dissolving the
seed layer 8 of copper. Accordingly, as shown in FIG. 23, in carrying out electroplating of the substrate W, having on its surface the above-describedseed layer 8, to form copper interconnects, theseed layer 8 can be dissolved by the plating solution upon contact of the substrate W with the plating solution. In particular, theseed layer 8 can be dissolved out in the sidewalls of fine holes or trenches, especially at portions near the bottoms of the holes or trenches, resulting in electrical non-conductivity and formation of voids at those portions. - If the film thickness A1 of the
seed layer 8 on the external substrate surface, shown in FIG. 22, is made large for the purpose of ensuring the side coverage, the substantial aspect ratio of therecess 5 should then be increased. Further, blockage of the opening of the hole could occur upon embedding of copper, whereby a void will be formed in the hole, leading to a decreased yield. - On the other hand, when a
barrier layer 6 is formed on the surface of a substrate W in which relatively small and large fine recesses, e.g.narrow trenches 5 a andbroad trenches 5 b, are co-present in the surface, as shown in FIG. 24A, and aseed layer 8 is formed on thebarrier layer 6, as shown in FIG. 24B, and then copper is embedded in thetrenches narrow trenches 5 a, whereby theplated copper film 7 is likely to be raised even when the plating solution or an additive in the plating solution is optimized, whereas plating with a sufficiently high leveling cannot be effected in thebroad trenches 5 b, resulting in an insufficient embedding of copper. - In this regard, it may be considered to increase the overall thickness of embedded copper film in order to prevent the insufficient embedding. When considering a later CMP processing for flattening the surface of the substrate W, however, a thicker plated film necessarily increases the polishing amount, thus necessarily prolonging the processing time. Increasing a CMP rate to avoid the processing time prolongation could cause dishing in the
broad trenches 5 b during the CMP processing. - In order to solve these problems, it is necessary to make the thickness of a plated film as thin as possible, and reduce or eliminate the raised portions and recesses in the plated film even when narrow trenches and broad trenches are co-present in the surface of a substrate to thereby improve the flatness of the plated film. At present, however, when performing plating using, for example, a copper sulfate plating bath, it is not possible to simultaneously decrease the raised portions and decrease the recesses solely by the action of the plating solution or an additive.
- The present invention has been made in view of the above situation in the related art. It is therefore an object of the present invention to provide a plating method which can form defect-free, completely-embedded interconnects of a conductive material in recesses in the surface of a substrate even when the recesses are of a high aspect ratio, and which can improve the flatness of a plated film on the substrate even when narrow trenches and broad trenches are co-present in the surface of the substrate, enabling a later CMP processing to be carried out in a short time while preventing dishing during the CMP processing.
- In order to achieve the above object, the present invention provides a plating method, comprising: providing a high resistance structure between a surface of a substrate, said surface being connected to a cathode electrode, and an anode electrode; filling the space between the substrate and the anode electrode with a plating solution while applying a voltage between the cathode electrode and the anode electrode; and growing a plated film on the surface of the substrate while controlling an electric current flowing between the cathode electrode and the anode electrode at a constant value.
- This method can prevent a seed layer from being dissolved by a plating solution that is supplied onto the surface of a substrate to perform plating, and can therefore enable a plated film to grow on the seed layer to effect embedding of e.g. copper.
- In a preferred embodiment of the present invention, the voltage applied is such as to allow an electric current with an average cathodic current density, with respect to the surface of the substrate, of 1 to 30 mA/cm2 to flow.
- The voltage is preferably applied for 100 to 2000 msec after the electric current begins to flow between the cathode electrode and the anode electrode.
- The present invention provides another plating method, comprising: providing a high resistance structure between a surface of a substrate, said surface being connected to a cathode electrode, and an anode electrode; filling the space between the substrate and the anode electrode with a plating solution; and growing a plated film on the surface of the substrate while controlling an electric current flowing between the cathode electrode and the anode electrode at stepwise changing constant values.
- It becomes possible with this plating method to carry out a first-step plating at a low electric current to reinforce a seed layer on a substrate and carry out a second-step plating to grow a plated film on the seed layer to effect embedding of e.g. copper. Such a stepwise plating makes it possible to form defect-free, completely-embedded interconnects of a conductive material, such as copper, in recesses in the surface of a substrate even when the recesses are of a high aspect ratio.
- In a preferred embodiment of the present invention, the value of the electric current flowing between the cathode electrode and the anode electrode is increased stepwise.
- In a preferred embodiment of the present invention, the plating solution is changed for a different plating solution in the process of film formation.
- In a preferred embodiment of the present invention, the surface of the substrate is cleaned in the process of film formation.
- The present invention also provides yet another plating method, comprising: providing a high resistance structure between a surface of a substrate, said surface being connected to a cathode electrode, and a anode electrode; filling the space between the substrate and the anode electrode with a plating solution; growing a plated film on the surface of the substrate while controlling an electric current flowing between the cathode electrode and the anode electrode at a constant value; reversing the direction of the electric current flowing between the cathode electrode and the anode electrode to etch away the surface of the plated film; and further growing the plated film on the surface of the substrate while controlling an electric current flowing between the cathode electrode and the anode electrode at a constant value.
- According to this method, the surface of a plated film is etched away between plating processings to flatten the plated film, whereby the flatness of the final plated film can be improved.
- In a preferred embodiment of the present invention, the step of etching the surface of the plated film and the subsequent step of growing the plated film are carried out repeatedly.
- The present invention also provides yet another plating method, comprising: filling the space between a surface of a substrate, said surface being connected to a cathode electrode, and an anode electrode with a plating solution while applying a voltage between the cathode electrode and the anode electrode; and growing a plated film on the surface of the substrate while controlling an electric current flowing between the cathode electrode and the anode electrode at a constant value.
- The above and other objects, features, and advantages of the present invention will be apparent from the following description when taken in conjunction with the accompanying drawings that illustrates preferred embodiments of the present invention by way of example.
- FIG. 1 is an overall plan view of a substrate processing apparatus provided with a plating apparatus for carrying out a plating method according to the present invention;
- FIG. 2 is a plan view of the plating apparatus shown in FIG. 1;
- FIG. 3 is an enlarged sectional view of the substrate holder and the electrode portion of the plating apparatus shown in FIG. 1;
- FIG. 4 is a front view of the pre-coating/recovering arm of the plating apparatus shown in FIG. 1;
- FIG. 5 is a plan view of the substrate holder of the plating apparatus shown in FIG. 1;
- FIG. 6 is a cross-sectional view taken along the line B-B of FIG. 5;
- FIG. 7 is a cross-sectional view taken along the line C—C of FIG. 5;
- FIG. 8 is a plan view of the electrode portion of the plating apparatus shown in FIG. 1;
- FIG. 9 is a cross-sectional view taken along the line D-D of FIG. 8;
- FIG. 10 is a plan view of the electrode arm section of the plating apparatus shown in FIG. 1;
- FIG. 11 is a schematic sectional view illustrating the electrode head and the substrate holder of the plating apparatus shown in FIG. 1 upon electroplating;
- FIG. 12 is a graph showing the relationship between electric current and time in a control method (plating method) as carried out by the plating apparatus shown in FIG. 1;
- FIG. 13 is a graph showing the relationship between electric current and time in another control method (plating method) as carried out by the plating apparatus shown in FIG. 1;
- FIG. 14 is a graph showing the relationship between electric current and time in yet another control method (plating method) as carried out by the plating apparatus shown in FIG. 1;
- FIG. 15 is a graph showing the relationship between electric current and time in yet another control method (plating method) as carried out by the plating apparatus shown in FIG. 1;
- FIG. 16 is a graph showing the relationship between electric current and time in yet another control method (plating method) as carried out by the plating apparatus shown in FIG. 1;
- FIGS. 17A through 17C are diagrams illustrating a series of a first-step plating, an intermediate etching step and a second-step plating, the etching step being carried out by applying a reverse current;
- FIG. 18 is a schematic diagram illustrating another plating apparatus;
- FIG. 19 is an overall plan view of another substrate processing apparatus provided with a plating apparatus useful for carrying out a plating method according to the present invention;
- FIG. 20 is a block diagram illustrating a substrate processing process as carried out by the substrate processing apparatus shown in FIG. 19;
- FIGS. 21A through 21C are diagrams illustrating, in a sequence of process steps, an example of the formation of copper interconnects by plating;
- FIG. 22 is a diagram illustrating the formation of a seed layer on the surface of a recess (hole) having a high aspect ratio;
- FIG. 23 is a diagram illustrating the problem of dissolution of the seed layer shown in FIG. 22 upon its contact with a plating solution; and
- FIGS. 24A through 24C are diagrams illustrating the formation of embedded interconnects by copper plating of a substrate as carried out by a conventional method.
- Preferred embodiments of the present invention will now be described in detail with reference to the drawings. The following embodiments relate to the application of the present invention useful for forming interconnects of copper by embedding copper in fine recess for interconnects formed in a surface of the substrate.
- FIG. 1 is a plan view showing a substrate processing apparatus incorporating a plating apparatus for performing a plating method according to the present invention. As shown in FIG. 1, this substrate processing apparatus has a rectangular facility which houses therein two loading/
unloading units 10 for housing a plurality of substrates W therein, two platingapparatuses 12 for performing plating process, atransfer robot 14 for transferring substrates W between the loading/unloading units 10 and the platingapparatuses 12, and platingsolution supply equipment 18 having aplating solution tank 16. - The
plating apparatus 12, as shown in FIG. 2, is provided with asubstrate processing section 20 for performing plating process and processing incidental thereto, and aplating solution tray 22 for storing a plating solution is disposed adjacent to thesubstrate processing section 20. There is also provided anelectrode arm portion 30 having anelectrode head 28 which is held at the front end of anarm 26 swingable about arotating shaft 24 and which is swung between thesubstrate processing section 20 and theplating solution tray 22. Furthermore, a pre-coating/recoveringarm 32, and fixednozzles 34 for ejecting pure water or a chemical liquid such as ion water, and further a gas or the like toward a substrate are disposed laterally of thesubstrate processing section 20. In this embodiment, three of the fixednozzles 34 are disposed, and one of them is used for supplying pure water. - The
substrate processing section 20, as shown in FIG. 3, has asubstrate holder 36 for holding a substrate W with its surface (plating surface) facing upward, and aelectrode portion 38 located above thesubstrate holder 36 so as to surround a peripheral portion of thesubstrate holder 36. Further, a substantially cylindrical bottomedcup 40 surrounding the periphery of thesubstrate holder 36 for preventing scatter of various chemical liquids used during processing is provided so as to be vertically movable by an air cylinder (not shown). - The
substrate holder 36 is adapted to be raised and lowered by theair cylinder 44 between a lower substrate transfer position A, an upper plating position B, and a pretreatment/cleaning position C intermediate between these positions. Thesubstrate holder 36 is also adapted to rotate at an arbitrary acceleration and an arbitrary velocity integrally with theelectrode portion 38 by a rotating motor and a belt (not shown). Substrate carry-in and carry-out openings (not shown) are provided in confrontation with the substrate transfer position A in a side panel of theplating apparatus 12 facing thetransfer robot 14. When thesubstrate holder 36 is raised to the plating position B, a sealingmember 90 and cathode electrodes 88 (to be described below) of theelectrode portion 38 are brought into contact with the peripheral edge portion of the substrate W held by thesubstrate holder 36. On the other hand, thecup 40 has an upper end located below the substrate carry-in and carry-out openings, and when thecup 40 ascends, the upper end of thecup 40 reaches a position above theelectrode portion 38 closing the substrate carry-in and carry-out openings, as shown by imaginary lines in FIG. 3. - The
plating solution tray 22 serves to wet ahigh resistance structure 110 and an anode electrode 98 (to be described later on) of theelectrode arm portion 30 with a plating solution, when plating has not been performed. Theplating solution tray 22 is set at a size in which thehigh resistance structure 110 can be accommodated, and theplating solution tray 22 has a plating solution supply port and a plating solution drainage port (not shown). A photo-sensor is attached to theplating solution tray 22, and can detect brimming with the plating solution in theplating solution tray 22, i.e., overflow, and drainage. - The
electrode arm portion 30 is vertically movable by avertical movement motor 132, which is a servomotor, and aball screw 134, and swingable between theplating solution tray 22 and thesubstrate processing section 20 by a swing motor, in this embodiment, as described bellow. A compressed actuator may be used. - As shown in FIG. 4, the pre-coating/recovering
arm 32 is coupled to an upper end of avertical support shaft 58. The pre-coating/recoveringarm 32 is swingable by arotary actuator 60 and is also vertically moveable by an air cylinder (not shown). The pre-coating/recoveringarm 32 supports apre-coating nozzle 64 for discharging a pre-coating liquid, on its free end side, and a platingsolution recovering nozzle 66 for recovering the plating solution, on a portion closer to its proximal end. Thepre-coating nozzle 64 is connected to a syringe that is actuatable by an air cylinder, for example, for intermittently discharging a pre-coating liquid from thepre-coating nozzle 64. The platingsolution recovering nozzle 66 is connected to a cylinder pump or an aspirator, for example, to draw the plating solution on the substrate from the platingsolution recovering nozzle 66. - As shown in FIGS. 5 through 7, the
substrate holder 36 has a disk-shapedsubstrate stage 68 and sixvertical support arms 70 disposed at spaced intervals on the circumferential edge of thesubstrate stage 68 for holding a substrate W in a horizontal plane on respective upper surfaces of thesupport arms 70. Apositioning plate 72 is mounted on an upper end one of thesupport arms 70 for positioning the substrate by contacting the end face of the substrate. Apressing finger 74 is rotatably mounted on an upper end of thesupport arm 70, which is positioned opposite to thesupport arm 70 having thepositioning plate 72, for abutting against an end face of the substrate W and pressing the substrate W to thepositioning plate 72 when rotated. Chuckingfingers 76 are rotatably mounted on upper ends of the remaining foursupport arms 70 for pressing the substrate W downwardly and gripping the circumferential edge of the substrate W. - The
pressing finger 74 and the chuckingfingers 76 have respective lower ends coupled to upper ends ofpressing pins 80 that are normally urged to move downwardly by coil springs 78. When thepressing pins 80 are moved downwardly, thepressing finger 74 and the chuckingfingers 76 are rotated radially inwardly into a closed position. Asupport plate 82 is disposed below thesubstrate stage 68 for engaging lower ends of the opening pins 80 and pushing them upwardly. - When the
substrate holder 36 is located in the substrate transfer position A shown in FIG. 3, thepressing pins 80 are engaged and pushed upwardly by thesupport plate 82, so that thepressing finger 74 and the chuckingfingers 76 rotate outwardly and open. When thesubstrate stage 68 is elevated, the opening pins 80 are lowered under the resiliency of the coil springs 78, so that thepressing finger 74 and the chuckingfingers 76 rotate inwardly and close. - As shown in FIGS. 8 and 9, the
electrode portion 38 comprises anannular frame 86 fixed to upper ends ofvertical support columns 84 mounted on the peripheral edge of the support plate 82 (see FIG. 7), a plurality of, six in this embodiment,cathode electrodes 88 attached to a lower surface of theannular frame 86 and projecting inwardly, and anannular sealing member 90 mounted on an upper surface of theannular frame 86 in covering relation to upper surfaces of thecathode electrodes 88. The sealingmember 90 is adapted to have an inner peripheral edge portion inclined inwardly downwardly and progressively thin-walled, and to have an inner peripheral end suspending downwardly. - When the
substrate holder 36 has ascended to the plating position B, as shown FIG. 3, thecathode electrodes 88 are pressed against the peripheral edge portion of the substrate W held by thesubstrate holder 36 for thereby allowing electric current to pass through the substrate W. At the same time, an inner peripheral end portion of the sealingmember 90 is brought into contact with an upper surface of the peripheral edge of the substrate W under pressure to seal its contact portion in a watertight manner. As a result, the plating solution supplied onto the upper surface (plating surface) of the substrate W is prevented from seeping from the end portion of the substrate W, and the plating solution is prevented from contaminating thecathode electrodes 88. - In the present embodiment, the
electrode portion 38 is vertically immovable, but rotatable in a body with thesubstrate holder 36. However, theelectrode portion 38 may be arranged such that it is vertically movable and the sealingmember 90 is pressed against the surface, to be plated, of the substrate W when theelectrode portion 38 is lowered. - As shown in FIGS. 10 and 11, the
electrode head 28 of theelectrode arm section 30 includes ahousing 94 which is coupled via aball bearing 92 to the free end of thepivot arm 26, and ahigh resistance structure 110 which is disposed such that it closes the bottom opening of thehousing 94. Thehousing 94 has at its lower end an inwardly-projectingportion 94 a, while thehigh resistance structure 110 has at its top aflange portion 110 a. Theflange portion 110 a is engaged with the inwardly-projectingportion 94 a and aspacer 96 is interposed therebetween. Thehigh resistance structure 110 is thus held with thehousing 94, while a hollowplating solution chamber 100 is defined in thehousing 94. - The
high resistance structure 110 is composed of porous ceramics such as alumina, SiC, mullite, zirconia, titania or cordierite, or a hard porous material such as a sintered compact of polypropylene or polyethylene, or a composite material comprising these materials. In case of the alumina-based ceramics, for example, the ceramics with a pore diameter of 30 to 200 μm is used. In case of the SiC, SiC with a pore diameter of not more than 30 μm, a porosity of 20 to 95%, and a thickness of about 1 to 20 mm, preferably 5 to 20 mm, more preferably 8 to 15 mm, is used. Thehigh resistance structure 110, in this embodiment, is constituted of porous ceramics of alumina having a porosity of 30%, and an average pore diameter of 100 μm. The porous ceramic plate per se is an insulator, but the high resistance structure is constituted by causing the plating solution to enter its interior complicatedly and follow a considerably long path in the thickness direction. - The
high resistance structure 110, which has the high resistance, is disposed in theplating solution chamber 100. Hence, the influence of the resistance of the seed layer 8 (see FIG. 22) becomes a negligible degree. Consequently, the difference in current density over the surface of the substrate due to electrical resistance on the surface of the substrate W becomes small, and the uniformity of the plated film over the surface of the substrate improves. - In the
plating solution chamber 100, there is disposed ananode electrode 98 held in abutment against an lower surface of a platingsolution introduction pipe 104 disposed above theanode electrode 98. The platingsolution introduction pipe 104 has a platingsolution introduction port 104 a connected to a platingsolution supply pipe 102 which extends from the plating solution supply unit 18 (see FIG. 1). A platingsolution discharge port 94 b provided in an upper plate of thehousing 94 is connected to an platingsolution discharge pipe 106 communicating with theplating solution chamber 100. - A manifold structure is employed for the plating
solution introduction pipe 104 so that the plating solution can be supplied uniformly onto the plating surface of the substrate. In particular, a large number ofnarrow tubes 112, communicating with the platingsolution introduction pipe 104, are connected to thepipe 104 at predetermined positions along the long direction of thepipe 104. Further, small holes are provided in theanode electrode 98 and thehigh resistance structure 110 at positions corresponding to thenarrow tubes 112. Thenarrow tubes 112 extend downwardly in the small holes and reach the lower surface or its vicinity of thehigh resistance structure 110. - Thus, the plating solution, introduced from the plating
solution supply pipe 102 into the platingsolution introduction pipe 104, passes through thenarrow tubes 112 and reaches the bottom of thehigh resistance structure 110, and pass through thehigh resistance structure 110 and fills theplating solution chamber 100, whereby theanode electrode 98 is immersed in the plating solution. The plating solution is discharged from the platingsolution discharge pipe 106 by application of suction to the platingsolution discharge pipe 106. - In order to suppress slime formation, the
anode electrode 98 is made of copper (phosphorus-containing copper) containing 0.03 to 0.05% of phosphorus. It is also possible to use an insoluble material for theanode electrode 98. - The
cathode electrodes 88 are electrically connected to the negative pole of aplating power source 114, and theanode electrode 98 is electrically connected to the positive pole of theplating power source 114. Theplating power source 114 can change the direction of current flow alternatively. - The
ball bearing 92 is coupled to thepivot arm 26 via asupport member 124. Thepivot arm 26 is vertically movable by avertical movement motor 132, which is a servomotor, and aball screw 134. It is also possible to use a compressed air actuator to constitute a vertical movement mechanism. - When carrying out electroplating, the
substrate holder 36 is positioned at the plating position B (see FIG. 3). As shown in FIG. 11, theelectrode head 28 is lowered until the distance between the substrate W held by thesubstrate holder 36 and thehigh resistance structure 110 becomes e.g. about 0.1 to 3 mm. A plating solution is supplied from the platingsolution supply pipe 102 to the upper surface (plating surface) of the substrate W while impregnating thehigh resistance structure 110 with the plating solution and filling theplating solution chamber 100 with the plating solution to carry out plating of the plating surface of the substrate W. - The operation of the substrate processing apparatus incorporating the above-described plating apparatus will now be described by furthermore referring to FIG. 12.
- First, a substrate W to be plated is taken out from one of the loading/
unloading units 10 by thetransfer robot 14, and transferred, with the surface to be plated facing upward, through the substrate carry-in and carry-out opening defined in the side panel, into one of the platingapparatuses 12. At this time, thesubstrate holder 36 is in the lower substrate transfer position A. After the hand of thetransfer robot 14 has reached a position directly above thesubstrate stage 68, the hand of thetransfer robot 14 is lowered to place the substrate W on thesupport arms 70. The hand of thetransfer robot 14 is then retracted through the substrate carry-in and carry-out opening. - After the hand of the
transfer robot 14 is retracted, thecup 40 is elevated. Then, thesubstrate holder 36 is lifted from the substrate transfer position A to the pretreatment/cleaning position C. As thesubstrate holder 36 ascends, the substrate W placed on thesupport arms 70 is positioned by thepositioning plate 72 and thepressing finger 74, and then reliably gripped by the chuckingfingers 76. - On the other hand, the
electrode head 28 of theelectrode arm portion 30 is in a normal position over theplating solution tray 22 now, and thehigh resistance structure 110 or theanode electrode 98 is positioned in theplating solution tray 22. At the same time that thecup 40 ascends, the plating solution starts being supplied to theplating solution tray 22 and theelectrode head 28. Until the step of plating the substrate W is initiated, the new plating solution is supplied, and the platingsolution discharge pipe 106 is evacuated to replace the plating solution in thehigh resistance structure 110 and remove air bubbles from the plating solution in thehigh resistance structure 110. When the ascending movement of thecup 40 is completed, the substrate carry-in and carry-out opening in the side panel is closed by thecup 40, isolating the atmosphere in the side panel and the atmosphere outside of the side panel from each other. - When the
cup 40 is elevated, the pre-coating step is initiated. Specifically, thesubstrate holder 36 that has received the substrate W is rotated, and the pre-coating/recoveringarm 32 is moved from the retracted position to a position confronting the substrate W. When the rotational speed of thesubstrate holder 36 reaches a preset value, thepre-coating nozzle 64 mounted on the tip end of the pre-coating/recoveringarm 32 intermittently discharges a pre-coating liquid which comprises a surface active agent, for example, toward the plating surface of the substrate W. At this time, since thesubstrate holder 36 is rotating, the pre-coating liquid spreads all over the plating surface of the substrate W. Then, the pre-coating/recoveringarm 32 is returned to the retracted position, and the rotational speed of thesubstrate holder 36 is increased to spin the pre-coating liquid off and dry the plating surface of the substrate W. - After the completion of the pre-coating step, the plating step is initiated. First, the
substrate holder 36 is stopped against rotation, or the rotational speed thereof is reduced to a preset rotational speed for plating. In this state, thesubstrate holder 36 is lifted to the plating position B. Then, the peripheral edge of the substrate W is brought into contact with thecathode electrodes 88, when it is possible to pass an electric current, and at the same time, the sealingmember 90 is pressed against the upper surface of the peripheral edge of the substrate W, thus sealing the peripheral edge of the substrate W in a watertight fashion. - Based on a signal indicating that the pre-coating step for the loaded substrate W is completed, the
electrode arm portion 30 is swung in a horizontal direction to displace theelectrode head 28 from a position over theplating solution tray 22 to a position over the plating processing position. After theelectrode head 28 reaches this position, theelectrode head 28 is lowered toward theelectrode portion 38. At this time, thehigh resistance structure 110 does not contact with the plating surface of the substrate W, but is held closely to the plating surface of the substrate W at a distance ranging from 0.1 mm to 3 mm. When the descent of theelectrode head 28 is completed, the plating process is initiated. - In particular, as shown in FIG. 12, the negative pole of the
plating power source 114 is connected to thecathode electrodes 88 and the positive pole is connected to theanode electrode 98, and a constant voltage is applied between thecathode electrodes 88 and theanode electrode 98, i.e. constant voltage control is carried out, while a plating solution is supplied from the platingsolution supply pipe 102 into theelectrode head 28, so that the plating solution is supplied onto the upper surface (plating surface) of the substrate W while thehigh resistance structure 110 is impregnated with the plating solution and theplating solution chamber 100 is filled with the plating solution (t0-t1). The voltage is preferably such as to allow an electric current with an average cathodic current density, with respect to the surface of the substrate W, of 1 mA/cm2 to 30 mA/cm2 to flow. The time period for applying the voltage is generally 100 to 2000 msec, preferably 300 to 1000 msec from the moment at which the electric current begins to flow between thecathode electrodes 88 and theanode electrode 98. - According to this embodiment, the moment at which the electric current begins to flow between the
cathode electrodes 88 and theanode electrode 98 is deemed as a liquid-contact point. However, it is also possible, for example, to allow a weak direct current or alternating current to flow between thecathode electrodes 88 and theanode electrode 98 in advance, and determine a liquid-contact point by detecting a change in voltage. - By thus supplying the plating solution while carrying out a constant voltage control, i.e. applying a constant voltage between the
cathode electrodes 88 and theanode electrode 98, the drawback of dissolution ofseed layer 8 in the prior art as illustrated in FIG. 23 can be overcome. Thus, according to a conventional plating method, as shown in FIG. 23, aseed layer 8 on a substrate W can be dissolved by a plating solution upon contact of the substrate W with the plating solution. In particular, theseed layer 8 can be dissolved out in the sidewalls of fine holes or trenches, especially at portions near the bottoms of the holes or trenches, resulting in non-conductivity at those portions. Such a drawback can be overcome by the present method, and plating can be initiated in such a state that aseed layer 8 is present over the entire surfaces ofrecesses 5, as shown in FIG. 22. - After completion of the filling of plating solution, a plated film is allowed to grow on the surface (seed layer8) of the substrate while carrying out constant current control, i.e., applying a constant electric current between the
cathode electrodes 88 and theanode electrode 98. In particular, at the initial stage, a low constant current ii, for example at about 1 to 10 mA/cm2, preferably at about 3 to 7 mA/cm2, is applied so as to gradually grow a plated film (t1-t2). When the thickness of the plated film has reached a predetermined value, for example about 0.05 to 0.5 μm, preferably about 0.1 to 0.2 μm, a high constant current i2 (i2>i1), for example at about 10 to 40 mA/cm2, preferably at about 25 mA/cm2, is applied so as to rapidly grow the plated film, thereby effecting embedding of copper. During the plating, thesubstrate holder 36 is rotated at a low speed, according to necessity. - The
seed layer 8, which can be prevented from being dissolved with the plating solution as described above, is thus reinforced in the first-step plating carried out with a low electric current, and the plated film is allowed to grow in the second-step plating whereby embedding of copper is effected. Such a two-step plating can form defect-free, completely-embedded interconnects of a conductive material, such as copper, in recesses in the surface of a substrate even when the recesses are of a high aspect ratio. - When the plating process is completed, the
electrode arm portion 30 is raised and then swung to return to the position above theplating solution tray 22 and to lower to the ordinary position. Then, the pre-coating/recoveringarm 32 is moved from the retreat position to the position confronting to the substrate W, and lowered to recover the remainder of the plating solution on the substrate W by a platingsolution recovering nozzle 66. After recovering of the remainder of the plating solution is completed, the pre-coating/recoveringarm 32 is returned to the retreat position, and pure water is supplied from the fixednozzle 34 for supplying pure water toward the central portion of the substrate W for rinsing the plated surface of the substrate. At the same time, thesubstrate holder 36 is rotated at an increased speed to replace the plating solution on the surface of the substrate W with pure water. Rinsing the substrate W in this manner prevents the splashing plating solution from contaminating thecathode electrodes 88 of theelectrode portion 38 during descent of thesubstrate holder 36 from the plating position B. - After completion of the rinsing, the washing with water step is initiated. That is, the
substrate holder 36 is lowered from the plating position B to the pretreatment/cleaning position C. Then, while pure water is supplied from the fixednozzle 34 for supplying pure water, thesubstrate holder 36 and theelectrode portion 38 are rotated to perform washing with water. At this time, the sealingmember 90 and thecathode electrodes 88 can also be cleaned, simultaneously with the substrate W, by pure water directly supplied to theelectrode potion 38, or pure water scattered from the surface of the substrate W. - After washing with water is completed, the drying step is initiated. That is, supply of pure water from the fixed
nozzle 34 is stopped, and the rotational speed of thesubstrate holder 36 and theelectrode portion 38 is further increased to remove pure water on the surface of the substrate W by centrifugal force and to dry the surface of the substrate W. The sealingmember 90 and thecathode electrodes 88 are also dried at the same time. Upon completion of the drying, the rotation of thesubstrate holder 36 and theelectrode portion 38 is stopped, and thesubstrate holder 36 is lowered to the substrate transfer position A. Thus, the gripping of the substrate W by the chuckingfingers 76 is released, and the substrate W is just placed on the upper surfaces of thesupport arms 70. At the same time, thecup 40 is also lowered. - All the steps including the plating step, the pretreatment step accompanying to the plating step, the cleaning step, and the drying step are now finished. The
transfer robot 14 inserts its hand through the substrate carry-in and carry-out opening into the position beneath the substrate W, and raises the hand to receive the plated substrate W from thesubstrate holder 36. Then, thetransfer robot 14 returns the plated substrate W received from thesubstrate holder 36 to one of the loading/unloading units 10. - FIG. 13 shows another control method (plating method) as carried out by the plating apparatus. According to this method, the negative pole of the
plating power source 114 is connected to thecathode electrodes 88 and the positive pole is connected to theanode electrode 98, and a voltage (e.g. constant voltage) is applied between thecathode electrodes 88 and theanode electrode 98, while a plating solution is supplied from the platingsolution supply pipe 102 into theelectrode head 28, so that the plating solution is supplied onto the upper surface (plating surface) of the substrate W while thehigh resistance structure 110 is impregnated with the plating solution and theplating solution chamber 100 is filled with the plating solution (t0-t4). - After completion of the filling of plating solution, a plated film is allowed to grow on the surface of the substrate W while carrying out constant current control, i.e., applying a constant electric current between the
cathode electrodes 88 and theanode electrode 98. In particular, at the initial stage, a low constant current i3, for example at about 1 to 10 mA/cm2, preferably at about 3 to 7 mA/cm2, is applied so as to gradually grow a plated film (t4-t5). When the thickness of the plated film has reached a predetermined value, for example about 0.05 to 0.5 μm, preferably about 0.1 to 0.2 μm, the electric current (voltage) is switched so that thecathode electrodes 88 becomes an anode and theanode electrode 98 becomes a cathode, and a constant current (−i4) is applied between thecathode electrodes 88 and theanode electrode 98 so as to etch away the surface of the plated film and flatten the plated film (t5-t6). Thereafter, the electric current (voltage) is switched so that thecathode electrodes 88 becomes a cathode and theanode electrode 98 becomes an anode, and a high constant current i5 (i5>i3), for example at about 10 to 40 mA/cm2, preferably at about 25 mA/cm2, is applied so as to rapidly grow the plated film, thereby effecting embedding of copper. - By thus etching away the surface of a plated film between the plating steps to flatten the plated film, the flatness of the final plated film can be improved. In this connection, when a
barrier layer 6 is formed on the surface of a substrate W in which relative small and large fine recesses, e.g.narrow trenches 5 a andbroad trenches 5 b, are co-present in the surface, as shown in FIG. 17A, and aseed layer 8 is formed on thebarrier layer 6, and then copper plating is carried out to grow a plated film to effect embedding ofcopper film 7, the growth of plating tends to be promoted over thenarrow trenches 5 a whereby thecopper film 7 is likely to be raised, even when theseed layer 8 can be prevented from being dissolved with the plating solution as described above. According to the present method, the raisedportions 7 a of the platedcopper film 7, shown by the broken line in FIG. 17B, are etched away and a plated film is further grown on the flattenedcopper film 7 b to finally form acopper film 7 c. The flatness of the plated film (copper film 7) can thus be improved. - FIG. 14 shows yet another method (plating method) as carried out by the plating apparatus. According to this method, the negative pole of the
plating power source 114 is connected to thecathode electrodes 88 and theanode electrode 98, i.e. constant voltage control is carried out, while a plating solution is supplied from the platingsolution supply pipe 102 into theelectrode head 28, so that the plating solution is supplied onto the upper surface (plating surface) of the substrate W while thehigh resistance structure 110 is impregnated with the plating solution and theplating solution chamber 100 is filled with the plating solution (t0-t8). - After completion of the filling of plating solution, a plated film is allowed to grow on the surface (seed layer8) of the substrate while carrying out constant current control, i.e., applying a constant electric current between the
cathode electrodes 88 and theanode electrode 98. In particular, at the initial stage, a low constant current i6, which is lower than the electric current applied between thecathode electrodes 88 and theanode electrode 98 upon the constant voltage control, for example at about 1 to 10 mA/cm2, preferably at about 3 to 7 mA/cm2, is applied so as to gradually grow a plated film (t8-t9). When the thickness of the plated film has reached a predetermined value, for example about 0.05 to 0.5 μm, preferably about 0.1 to 0.2 μm, a high constant current i6 (i6>i5), for example at about 10 to 40/cm2, preferably at about 25 mA/cm2, is applied so as to rapidly grow the plated film, thereby effecting embedding of copper. During the plating, thesubstrate holder 36 is rotated at a low speed, according to necessity. - FIG. 15 shows yet another control method (plating method) as carried out by the plating apparatus. According to this method, the negative pole of the
plating power source 114 is connected to thecathode electrodes 88 and the positive pole is connected to theanode electrode 98, and a constant voltage is applied between thecathode electrodes 88 and theanode electrode 98, i.e. constant voltage control is carried out, while a plating solution is supplied from the platingsolution supply pipe 102 into theelectrode head 28, so that the plating solution is supplied onto the upper surface (plating surface) of the substrate W while thehigh resistance structure 110 is impregnated with the plating solution and theplating solution chamber 100 is filled with the plating solution (t0-t11). - After completion of the filling of plating solution, a plated film is allowed to grow on the surface (seed layer8) of the substrate while carrying out constant current control, i.e., applying a constant electric current between the
cathode electrodes 88 and theanode electrode 98. In particular, at the initial stage, a low constant current i8, which is higher than the electric current applied between thecathode electrodes 88 and theanode electrode 98 upon the constant voltage control, for example at about 1 to 10 mA/cm2, preferably at about 3 to 7 mA/cm2, is applied so as to gradually grow a plated film (t11-t12). When the thickness of the plated film has reached a predetermined value, for example about 0.05 to 0.5 μm, preferably about 0.1 to 0.2 μm, a high constant current i9 (i9>i8), for example at about 10 to 40 mA/cm2, preferably at about 25 mA/cm2, is applied so as to rapidly grow the plated film, thereby effecting embedding of copper. During the plating, thesubstrate holder 36 is rotated at a low speed, according to necessity. - FIG. 16 shows yet another control method (plating method) as carried out by the plating apparatus. This method effects embedding of copper by using two plating solutions of different compositions. In particular, the negative pole of the
plating power source 114 is connected to thecathode electrodes 88 and the positive pole is connected to theanode electrode 98, and a constant voltage is applied between thecathode electrodes 88 and theanode electrode 98, i.e. constant voltage control is carried out, while a plating solution is supplied from the platingsolution supply pipe 102 into theelectrode head 28, so that the plating solution is supplied onto the upper surface (plating surface) of the substrate W while thehigh resistance structure 110 is impregnated with the plating solution and theplating solution chamber 100 is filled with the plating solution (t0-t14). - After completion of the filling of plating solution, a plated film is allowed to grow on the surface (seed layer8) of the substrate while carrying out constant current control, i.e., applying a constant electric current between the
cathode electrodes 88 and theanode electrode 98. In particular, at the initial stage, a low constant current i10, for example at about 3 to 7 mA/cm2, is applied so as to gradually grow a plated film (t14-t15). - In the initial stage of plating, a plating solution suited for embedding of fine (narrow) patterns is employed. The following is an example of the composition of such plating solution:
CuSO4.5H2O 200 g/l H2SO4 50 g/ l HCl 60 mg/l Organic additive 5 ml/l - When the thickness of the plated film has reached a predetermined value, for example about 0.05 to 0.5 μm, preferably about 0.1 to 0.2 μm, the plating operation is stopped, and the plating solution is removed and the surface of the plated film is cleaned e.g. with pure water in the above-described manner.
- Next, a high constant current ill (i11>i10), for example at about 20 to 40 mA/cm2, preferably at about 25 MA/cm2, is applied so as to rapidly grow the plated film, thereby effecting embedding of copper.
- In the latter stage of plating, a plating solution suited for embedding of broad patterns, e.g. containing 100 to 300 g/l of copper sulfate and 10 to 10 g/l of sulfuric acid, is employed. The following is an example of the composition of such plating solution:
CuSO4.5H2O 200 g/l H2SO4 50 g/ l HCl 100 mg/l Organic additive 5 ml/l - FIG. 18 shows another plating apparatus useful for carrying out the plating method of the present invention. The plating apparatus includes an upwardly-open
cylindrical plating tank 602 for holding aplating solution 600, and arotatable substrate holder 604 for detachably holding a substrate W, such as a semiconductor wafer, with its front surface facing downward and locating the substrate W at a position at which it closes the top opening of theplating tank 602. Ananode electrode 606 in a flat plate shape which, when immersed in theplating solution 600, serves as an anode is disposed horizontally in theplating tank 602. A seed layer, formed in the surface of the substrate W, serves as a cathode. Theanode electrode 606 may be comprised of, for example, a plate of copper or an aggregate of copper balls. - A plating
solution supply pipe 610, which is provided with apump 608 therein, is connected to the center of the bottom of theplating tank 602. Further, aplating solution receiver 612 is disposed around theplating tank 602. The plating solution that has flowed into theplating solution receiver 612 is returned through a platingsolution return pipe 614 to thepump 608. - In operation, the substrate W, held face down by the
substrate holder 604 and located at an upper position in theplating tank 602, is rotated and a predetermined voltage is applied between theanode electrode 606 and the seed layer (cathode electrode) of the substrate W while thepump 608 is driven to introduce theplating solution 600 into theplating tank 602, whereby a plating current is allowed to flow between theanode electrode 606 and the seed layer of the substrate W, and a plated copper film is formed on the lower surface of the substrate W. During the plating, theplating solution 600 overflowing theplating tank 602 is recovered by theplating solution receiver 612 and circulated. - An
insulator 632 in a flat plate shape is disposed between theanode electrode 606 immersed in theplating solution 600 in theplating tank 602 and the substrate W held by thesubstrate holder 604 and located at an upper position in theplating tank 602. A plurality of through-holes 632 b of any desired sizes (diameters) are provided at any desired locations in theinsulator 632 so that a plating current can flow only through the through-holes 632 b, making it possible to make a plated copper film thicker at desired portions of the substrate. - Also with the plating apparatus of such a construction, by carrying out the same control as described above, it becomes possible to form defect-free, completely-embedded interconnects of a conductive material in recesses in the surface of a substrate even when the recesses are of a high aspect ratio, and improve the flatness of a plated film on the substrate even when narrow trenches and broad trenches are co-present in the surface of the substrate, enabling a later CMP processing to be carried out in a short time while preventing dishing during the CMP processing.
- FIG. 19 shows an overall layout plan of another substrate processing apparatus provided with a plating apparatus for carrying out a plating method according to the present invention. The substrate processing apparatus (interconnects-forming apparatus) includes two loading/
unloading sections 202 for carrying a substrate in and out amain frame 200. Inside themain frame 200 are disposed aheat treatment apparatus 204 for heat-treating (annealing) a plated film formed on the substrate, a bevel-etching apparatus 206 for removing a plated film formed on or adhering to a peripheral portion of the substrate, two cleaning/dryingapparatuses 208 for cleaning the surface of the substrate with a cleaning liquid, such as a chemical liquid or pure water, and spin-drying the cleaned substrate, asubstrate stage 210 for temporarily placing the substrate thereon, and two platingapparatuses 212. Inside themain frame 200 are also provided a movablefirst transfer robot 214 for transferring the substrate between the loading/unloading sections 202 and thesubstrate stage 210, and a movablesecond transfer robot 216 for transferring the substrate between thesubstrate stage 210, theheat treatment apparatus 204, the bevel-etching apparatus 206, the cleaning/dryingapparatuses 208 and the platingapparatuses 212. According to this embodiment, theplating apparatus 212 has a similar construction to that of theplating apparatus 12 shown in FIGS. 1 through 11. - The
main frame 200 has been made light-shielding so that the following process steps can be carried out under light-shielded conditions in themain frame 200, i.e. without irradiation of a light, such as an illuminating light, onto the interconnects of the substrate. This prevents corrosion of the interconnects of e.g. copper due to potential difference that would be produced by light irradiation onto the interconnects. - Positioned beside the
main frame 200, there is provided a platingsolution control apparatus 224 which includes aplating solution tank 220 and aplating solution analyzer 222, and which analyzes and controls the components of a plating solution for use in the platingapparatuses 212 and supplies the plating solution of a predetermined composition to the platingapparatuses 212. Theplating solution analyzer 222 includes an organic material analysis section for analyzing an organic material by cyclic voltammetry (CVS), liquid chromatography, etc., and an inorganic material analysis section for analyzing an inorganic material by neutralization titration, oxidation-reduction titration, polarography, electrometric titration, etc. The results of analysis by theplating solution analyzer 222 are fed back to adjust the components of the plating solution in theplating solution tank 220. The platingsolution control apparatus 224 may also be disposed inside themain frame 200. - An example of the formation of copper interconnects by the substrate processing apparatus, as illustrated in FIG. 20, will now be described.
- First, substrates W having a seed layer8 (see FIG. 17B) as an electric feeding layer formed on the surface are prepared, and a substrate cassette housing the substrates is mounted in the loading/
unloading section 202. One substrate W is taken by thefirst transfer robot 214 out of the cassette mounted in the loading/unloading section 202, and the substrate is carried in themain frame 200, transferred to thesubstrate stage 210, and placed and held on thesubstrate stage 210. The substrate held on thesubstrate stage 210 is transferred by thesecond transfer robot 216 to one of the platingapparatuses 212. - In the
plating apparatus 212, as with the above-described embodiment, a pre-plating treatment, such as pre-coating, of the surface (plating surface) of the substrate W is first carried out. Thereafter, plating of the substrate is carried out under a current/voltage control as shown in FIG. 13, for example. Thus, a plated copper film is first grown gradually on the surface of the substrate W, the surface of the plated copper film is then etched away to flatten the plated copper film, and the plated copper film is then grown rapidly to effect embedding of copper. During the processing, the composition of the plating solution in theplating solution tank 220 is analyzed by theplating solution analyzer 222, and a shortage of a component is replenished in the plating solution in theplating solution tank 220 so that the plating solution of a constant composition is supplied to theplating apparatus 212. After completion of the plating, as with the above-described embodiment, the plating solution remaining on the substrate is recovered and the plated surface of the substrate is rinsed, and the surface of the substrate is cleaned (water-washed) with e.g. pure water. The substrate after cleaning is transferred by thesecond transfer robot 216 to the bevel-etching apparatus 206. - In the bevel-
etching apparatus 206, while rotating the substrate which is held horizontally, an acid solution is supplied continuously to the central portion of the front surface of the substrate and an oxidant solution is supplied continuously or intermittently to a peripheral portion of the front surface. The acid solution may be of any non-oxidative acid, such as hydrofluoric acid, hydrochloric acid, sulfuric acid, citric acid, oxalic acid, etc. Examples of the oxidant solution include ozone water, hydrogen peroxide solution, nitric acid solution, and sodium hypochlorite solution, and a combination thereof. Copper, etc. formed on or adhering to a peripheral portion (bevel portion) of the substrate W is rapidly oxidized by the oxidant solution, and the oxidized product is etched and dissolved out by the acid solution which is supplied to the central portion of the substrate and spreads over the entire surface of the substrate. - During the above etching processing, an oxidant solution and an etching agent for silicon oxide film may be supplied simultaneously or alternately to the central portion of the back surface of the substrate, thereby oxidizing copper etc. in elemental form adhering to the back surface of the substrate W, together with the silicon of the substrate, with the oxidant solution and etching away the oxidized product with the etching agent.
- The substrate after bevel-etching is transferred by the
second transfer robot 216 to one of the cleaning/dryingapparatuses 208, where the surface of the substrate is cleaned with a cleaning liquid, such as a chemical liquid or pure water, followed by spin-drying. The dried substrate is transferred by thesecond transfer robot 216 to theheat treatment apparatus 204. - In the
heat treatment apparatus 204, heat treatment (annealing) of the copper film 7 (see FIG. 21B) formed on the surface of the substrate W is carried out, thereby crystallizing thecopper film 7 forming interconnects. The heat treatment (annealing) is carried out by heating the substrate, for example, at 400° C. for about a few tens of seconds to 60 seconds. At the same time, if necessary, a gas for oxidation inhibition is introduced into theheat treatment apparatus 204 and is allowed to flow along the surface of the substrate to prevent oxidation of the surface of thecopper film 7. The heating temperature of the substrate is generally 100 to 600° C., preferably 300 to 400° C. - The substrate W after heat treatment is transferred by the
second transfer robot 216 to thesubstrate stage 210 and held on thesubstrate stage 210. The substrate on thesubstrate stage 210 is transferred by thefirst transfer robot 214 to the cassette of the loading/unloading section 202. - Thereafter, extra metal formed on the insulating film and the barrier layer are removed by method such as chemical mechanical polishing (CMP) so as to flatten the surface, whereby forming interconnects composed of the
copper film 7, as shown in FIG. 21C. - Though in this embodiment copper is used as an interconnect metal, it is possible to use a copper alloy instead.
- The following Examples illustrate copper plating of the surface of a substrate by a plating method according to the present invention.
- In each of the Examples, two types of substrates are used: silicon wafer (diameter: 200 mm) with holes having a hole diameter of 0.15-0.50 μm and a depth of 0.8 μm; and silicon wafer (diameter: 200 mm) with trenches having a width of 0.12-1.0 μm. Seed layers are formed on the surfaces of these substrates by PVD to make electrical conduction, followed by copper plating using a copper sulfate plating solution.
- A copper sulfate plating solution having the following composition was used:
Copper sulfate pentahydrate: 200 g/L Sulfuric acid: 50 g/L Chlorine: 60 mg/L Additive: Proper amount - Ebatoronfil (manufactured by Ebara-Udylite Co., Ltd) was used as the additive.
- For each of the above-described substrates, electroplating was carried out in the following manner:
- A voltage of 0.4V had been applied in advance to the substrate (the current density at the substrate surface upon contact of the substrate with the plating solution was 7 mA/cm2), and the plating solution was filled into the space between the substrate and an anode electrode. The application of the constant voltage was continued for 500 msec after the filling of the plating solution. Thereafter, the constant voltage control was instantaneously changed to constant current control and a constant current was applied at 7 mA/cm2 for 30 sec to form a copper film, and then a constant current was applied at 25 mA/cM2 for 50 sec to further grow the plated film, thereby depositing a copper film having a thickness, on the plane of the substrate, of about 500 nm.
- The same substrates and the same plating solution as in Example 1 were used. For each of the substrates, electroplating was carried out in the following manner:
- A voltage of 1.0V had been applied in advance to the substrate (the current density at the substrate surface upon contact of the substrate with the plating solution was 20 mA/cm2), and the plating solution was filled into the space between the substrate and an anode electrode. The application of the constant voltage was continued for 300 msec after the filling of the plating solution. Thereafter, the constant voltage control was instantaneously changed to constant current control and a constant current was applied at 10 mA/cm2 for 30 sec to form a copper film, and then a constant current was applied at 20 mA/cm2 for 53 sec to further grow the plated film, thereby depositing a copper film having a thickness, on the plane of the substrate, of about 500 nm.
- The same substrates and the same plating solution as in Example 1 were used. For each of the substrates, electroplating was carried out in the following manner:
- A voltage of 0.7V had been applied in advance to the substrate (the current density at the substrate surface upon contact of the substrate with the plating solution was 15 mA/cm2), and the plating solution was filled into the space between the substrate and an anode electrode. The application of the constant voltage was continued for 500 msec after the filling of the plating solution. Thereafter, the constant voltage control was instantaneously changed to constant current control and a constant current was applied at 7 mA/cm2 for 40 sec to form a copper film, and then reverse electrolysis was carried out at 20 mA/cm2 for 4 sec, and then a constant current was applied at 25 mA/cm2 for 52 sec to further grow the plated film, thereby depositing a copper film having a thickness, on the plane of the substrate, of about 500 nm.
- The same substrates and the same plating solution as in Example 1 were used. For each of the substrates, electroplating was carried out in the following manner:
- The plating solution was filled into the space between the substrate and an anode electrode without application of a voltage therebetween. 500 msec after the filling of the plating solution, a constant current was applied at 7 mA/cm2 for 30 sec to form a copper film, and then a constant current was applied at 25 mA/cm2 for 50 sec to further grow the plated film, thereby depositing a copper film having a thickness, on the plane of the substrate, of about 500 nm.
- A hole portion or a trench portion of each of the substrates with the plated copper film, obtained in the above Examples 1 to 3 and Comp. Example 1, was cut off by means of FIB (focused in beam) and the cut surface was observed by SEM (scanning electron micrograph). As a result, with respect to the substrates of Examples 1 to 3, no void was observed in the substrates having fine holes or in the substrates having fine trenches. In contrast thereto the substrates of Comp. Example 1, many voids were observed at the bottom portions of fine holes and trenches.
- As described hereinabove, the present invention makes it possible to form defect-free, completely-embedded interconnects of a conductive material in recesses in the surface of a substrate even when the recesses are of a high aspect ratio, and improve the flatness of a plated film on the substrate even when narrow trenches and broad trenches are co-present in the surface of the substrate, enabling a later CMP processing to be carried out in a short time while preventing dishing during the CMP processing.
- Although certain preferred embodiments of the present invention have been shown and described in detail, it should be understood that various changes and modifications may be made therein without departing from the scope of the appended claims.
Claims (16)
1. A plating method, comprising:
providing a high resistance structure between a surface of a substrate, said surface being connected to a cathode electrode, and an anode electrode;
filling the space between the substrate and the anode electrode with a plating solution while applying a voltage between the cathode electrode and the anode electrode; and
growing a plated film on the surface of the substrate while controlling an electric current flowing between the cathode electrode and the anode electrode at a constant value.
2. The plating method according to claim 1 , wherein the voltage is applied for 100 to 2000 msec after the electric current begins to flow between the cathode electrode and the anode electrode.
3. The plating method according to claim 1 , wherein the voltage applied is such as to allow an electric current with an average cathodic current density, with respect to the surface of the substrate, of 1 to 30 mA/cm2 to flow.
4. The plating method according to claim 3 , wherein the voltage is applied for 100 to 2000 msec after the electric current begins to flow between the cathode electrode and the anode electrode.
5. A plating method, comprising:
providing a high resistance structure between a surface of a substrate, said surface being connected to a cathode electrode, and an anode electrode;
filling the space between the substrate and the anode electrode with a plating solution; and
growing a plated film on the surface of the substrate while controlling an electric current flowing between the cathode electrode and the anode electrode at stepwise changing constant values.
6. The plating method according to claim 5 , wherein the plating solution is changed for a different plating solution in the process of film formation.
7. The plating method according to claim 6 , wherein the surface of the substrate is cleaned in the process of film formation.
8. The plating method according to claim 5 , wherein the value of the electric current flowing between the cathode electrode and the anode electrode is increased stepwise.
9. The plating method according to claim 8 , wherein the plating solution is changed for a different plating solution in the process of film formation.
10. The plating method according to claim 9 , wherein the surface of the substrate is cleaned in the process of film formation.
11. A plating method, comprising:
providing a high resistance structure between a surface of a substrate, said surface being connected to a cathode electrode, and a anode electrode;
filling the space between the substrate and the anode electrode with a plating solution;
growing a plated film on the surface of the substrate while controlling an electric current flowing between the cathode electrode and the anode electrode at a constant value;
reversing the direction of the electric current flowing between the cathode electrode and the anode electrode to etch away the surface of the plated film; and
further growing the plated film on the surface of the substrate while controlling an electric current flowing between the cathode electrode and the anode electrode at a constant value.
12. The plating method according to claim 11 , wherein the step of etching the surface of the plated film and the subsequent step of growing the plated film are carried out repeatedly.
13. A plating method, comprising:
filling the space between a surface of a substrate, said surface being connected to a cathode electrode, and an anode electrode with a plating solution while applying a voltage between the cathode electrode and the anode electrode; and
growing a plated film on the surface of the substrate while controlling an electric current flowing between the cathode electrode and the anode electrode at a constant value.
14. The plating method according to claim 13 , wherein the voltage is applied for 100 to 200 msec after the electric current begins to flow between the cathode electrode and the anode electrode.
15. The plating method according to claim 13 , wherein the voltage applied is such as to allow an electric current with an average cathodic current density, with respect to the surface of the substrate, of 1 to 30 mA/cm2 to flow.
16. The plating method according to claim 15 , wherein the voltage is applied for 100 to 2000 msec after the electric current begins to flow between the cathode electrode and the anode electrode.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002382405 | 2002-12-27 | ||
JP2002-382405 | 2002-12-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
US20040149584A1 true US20040149584A1 (en) | 2004-08-05 |
Family
ID=32766684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/742,767 Abandoned US20040149584A1 (en) | 2002-12-27 | 2003-12-23 | Plating method |
Country Status (2)
Country | Link |
---|---|
US (1) | US20040149584A1 (en) |
CN (1) | CN1531028A (en) |
Cited By (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6913520B1 (en) * | 2004-01-16 | 2005-07-05 | United Microelectronics Corp. | All-in-one polishing process for a semiconductor wafer |
US20060163076A1 (en) * | 2005-01-25 | 2006-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for electrochemical plating semiconductor wafers |
US20070202699A1 (en) * | 2006-02-27 | 2007-08-30 | Kabushiki Kaisha Toshiba | Electronic component fabrication method |
US20080217182A1 (en) * | 2007-03-08 | 2008-09-11 | E. I. Dupont De Nemours And Company | Electroplating process |
US20090114542A1 (en) * | 2007-11-06 | 2009-05-07 | Spansion Llc | Process of forming an electronic device including depositing a conductive layer over a seed layer |
EP2072644A1 (en) * | 2007-12-21 | 2009-06-24 | ETH Zürich, ETH Transfer | Device and method for the electrochemical deposition of chemical compounds and alloys with controlled composition and or stoichiometry |
US20100032310A1 (en) * | 2006-08-16 | 2010-02-11 | Novellus Systems, Inc. | Method and apparatus for electroplating |
US20100044236A1 (en) * | 2000-03-27 | 2010-02-25 | Novellus Systems, Inc. | Method and apparatus for electroplating |
US20100285660A1 (en) * | 2006-10-17 | 2010-11-11 | Enthone Inc. | Copper deposition for filling features in manufacture of microelectronic devices |
US8540857B1 (en) | 2008-12-19 | 2013-09-24 | Novellus Systems, Inc. | Plating method and apparatus with multiple internally irrigated chambers |
US8623193B1 (en) | 2004-06-16 | 2014-01-07 | Novellus Systems, Inc. | Method of electroplating using a high resistance ionic current source |
US8795480B2 (en) | 2010-07-02 | 2014-08-05 | Novellus Systems, Inc. | Control of electrolyte hydrodynamics for efficient mass transfer during electroplating |
US8858774B2 (en) | 2008-11-07 | 2014-10-14 | Novellus Systems, Inc. | Electroplating apparatus for tailored uniformity profile |
US9449808B2 (en) | 2013-05-29 | 2016-09-20 | Novellus Systems, Inc. | Apparatus for advanced packaging applications |
US20160319450A1 (en) * | 2011-06-06 | 2016-11-03 | United Microelectronics Corp. | Electrical chemical plating process |
US9523155B2 (en) | 2012-12-12 | 2016-12-20 | Novellus Systems, Inc. | Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating |
US9567685B2 (en) | 2015-01-22 | 2017-02-14 | Lam Research Corporation | Apparatus and method for dynamic control of plated uniformity with the use of remote electric current |
US9624592B2 (en) | 2010-07-02 | 2017-04-18 | Novellus Systems, Inc. | Cross flow manifold for electroplating apparatus |
US9670588B2 (en) | 2013-05-01 | 2017-06-06 | Lam Research Corporation | Anisotropic high resistance ionic current source (AHRICS) |
US9752248B2 (en) | 2014-12-19 | 2017-09-05 | Lam Research Corporation | Methods and apparatuses for dynamically tunable wafer-edge electroplating |
US9816194B2 (en) | 2015-03-19 | 2017-11-14 | Lam Research Corporation | Control of electrolyte flow dynamics for uniform electroplating |
US9822461B2 (en) | 2006-08-16 | 2017-11-21 | Novellus Systems, Inc. | Dynamic current distribution control apparatus and method for wafer electroplating |
US9909228B2 (en) | 2012-11-27 | 2018-03-06 | Lam Research Corporation | Method and apparatus for dynamic current distribution control during electroplating |
US9988733B2 (en) | 2015-06-09 | 2018-06-05 | Lam Research Corporation | Apparatus and method for modulating azimuthal uniformity in electroplating |
US10014170B2 (en) | 2015-05-14 | 2018-07-03 | Lam Research Corporation | Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity |
US10094034B2 (en) | 2015-08-28 | 2018-10-09 | Lam Research Corporation | Edge flow element for electroplating apparatus |
US10233556B2 (en) | 2010-07-02 | 2019-03-19 | Lam Research Corporation | Dynamic modulation of cross flow manifold during electroplating |
US10364505B2 (en) | 2016-05-24 | 2019-07-30 | Lam Research Corporation | Dynamic modulation of cross flow manifold during elecroplating |
US10781527B2 (en) | 2017-09-18 | 2020-09-22 | Lam Research Corporation | Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating |
US11001934B2 (en) | 2017-08-21 | 2021-05-11 | Lam Research Corporation | Methods and apparatus for flow isolation and focusing during electroplating |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5937876B2 (en) * | 2012-04-18 | 2016-06-22 | 名古屋メッキ工業株式会社 | Plated fiber manufacturing apparatus and method |
CN115058760A (en) * | 2022-07-04 | 2022-09-16 | 厦门海辰新材料科技有限公司 | Electroplating equipment and coating machine |
CN117587487B (en) * | 2024-01-18 | 2024-04-02 | 南京海创表面处理技术有限公司 | High-precision magnesium alloy workpiece surface electroplating equipment and control method |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020004301A1 (en) * | 1998-02-04 | 2002-01-10 | Semitool, Inc. | Submicron metallization using electrochemical deposition |
US6402925B2 (en) * | 1998-11-03 | 2002-06-11 | Nutool, Inc. | Method and apparatus for electrochemical mechanical deposition |
US6440291B1 (en) * | 2000-11-30 | 2002-08-27 | Novellus Systems, Inc. | Controlled induction by use of power supply trigger in electrochemical processing |
US6632335B2 (en) * | 1999-12-24 | 2003-10-14 | Ebara Corporation | Plating apparatus |
US20040016648A1 (en) * | 2002-07-24 | 2004-01-29 | Applied Materials, Inc. | Tilted electrochemical plating cell with constant wafer immersion angle |
US20040022940A1 (en) * | 2001-02-23 | 2004-02-05 | Mizuki Nagai | Cooper-plating solution, plating method and plating apparatus |
US6689257B2 (en) * | 2000-05-26 | 2004-02-10 | Ebara Corporation | Substrate processing apparatus and substrate plating apparatus |
US20040094511A1 (en) * | 2002-11-20 | 2004-05-20 | International Business Machines Corporation | Method of forming planar Cu interconnects without chemical mechanical polishing |
-
2003
- 2003-12-23 US US10/742,767 patent/US20040149584A1/en not_active Abandoned
- 2003-12-26 CN CNA2003101249530A patent/CN1531028A/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020004301A1 (en) * | 1998-02-04 | 2002-01-10 | Semitool, Inc. | Submicron metallization using electrochemical deposition |
US6806186B2 (en) * | 1998-02-04 | 2004-10-19 | Semitool, Inc. | Submicron metallization using electrochemical deposition |
US6402925B2 (en) * | 1998-11-03 | 2002-06-11 | Nutool, Inc. | Method and apparatus for electrochemical mechanical deposition |
US6632335B2 (en) * | 1999-12-24 | 2003-10-14 | Ebara Corporation | Plating apparatus |
US6689257B2 (en) * | 2000-05-26 | 2004-02-10 | Ebara Corporation | Substrate processing apparatus and substrate plating apparatus |
US6440291B1 (en) * | 2000-11-30 | 2002-08-27 | Novellus Systems, Inc. | Controlled induction by use of power supply trigger in electrochemical processing |
US20040022940A1 (en) * | 2001-02-23 | 2004-02-05 | Mizuki Nagai | Cooper-plating solution, plating method and plating apparatus |
US20040016648A1 (en) * | 2002-07-24 | 2004-01-29 | Applied Materials, Inc. | Tilted electrochemical plating cell with constant wafer immersion angle |
US20040094511A1 (en) * | 2002-11-20 | 2004-05-20 | International Business Machines Corporation | Method of forming planar Cu interconnects without chemical mechanical polishing |
Cited By (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8475644B2 (en) | 2000-03-27 | 2013-07-02 | Novellus Systems, Inc. | Method and apparatus for electroplating |
US20100044236A1 (en) * | 2000-03-27 | 2010-02-25 | Novellus Systems, Inc. | Method and apparatus for electroplating |
US20050159083A1 (en) * | 2004-01-16 | 2005-07-21 | Mu-Liang Liao | All-in-one polishing process for a semiconductor wafer |
US6913520B1 (en) * | 2004-01-16 | 2005-07-05 | United Microelectronics Corp. | All-in-one polishing process for a semiconductor wafer |
US8623193B1 (en) | 2004-06-16 | 2014-01-07 | Novellus Systems, Inc. | Method of electroplating using a high resistance ionic current source |
US20100140099A1 (en) * | 2005-01-25 | 2010-06-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for electrochemical plating semiconductor wafers |
US20060163076A1 (en) * | 2005-01-25 | 2006-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for electrochemical plating semiconductor wafers |
US8277619B2 (en) | 2005-01-25 | 2012-10-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for electrochemical plating semiconductor wafers |
US7988843B2 (en) | 2005-01-25 | 2011-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for electrochemical plating semiconductor wafers |
US7704368B2 (en) * | 2005-01-25 | 2010-04-27 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method and apparatus for electrochemical plating semiconductor wafers |
US20070202699A1 (en) * | 2006-02-27 | 2007-08-30 | Kabushiki Kaisha Toshiba | Electronic component fabrication method |
US20100032310A1 (en) * | 2006-08-16 | 2010-02-11 | Novellus Systems, Inc. | Method and apparatus for electroplating |
US10023970B2 (en) | 2006-08-16 | 2018-07-17 | Novellus Systems, Inc. | Dynamic current distribution control apparatus and method for wafer electroplating |
US9822461B2 (en) | 2006-08-16 | 2017-11-21 | Novellus Systems, Inc. | Dynamic current distribution control apparatus and method for wafer electroplating |
US8308931B2 (en) * | 2006-08-16 | 2012-11-13 | Novellus Systems, Inc. | Method and apparatus for electroplating |
US20100285660A1 (en) * | 2006-10-17 | 2010-11-11 | Enthone Inc. | Copper deposition for filling features in manufacture of microelectronic devices |
US7968455B2 (en) * | 2006-10-17 | 2011-06-28 | Enthone Inc. | Copper deposition for filling features in manufacture of microelectronic devices |
US20080217182A1 (en) * | 2007-03-08 | 2008-09-11 | E. I. Dupont De Nemours And Company | Electroplating process |
US20090114542A1 (en) * | 2007-11-06 | 2009-05-07 | Spansion Llc | Process of forming an electronic device including depositing a conductive layer over a seed layer |
WO2009080654A1 (en) * | 2007-12-21 | 2009-07-02 | Eidgenössische Technische Hochschule Zürich | Device and method for the electrochemical deposition of chemical compounds and alloys with controlled composition and/or stoichiometry |
US20100276291A1 (en) * | 2007-12-21 | 2010-11-04 | Lukas Durrer | Device and method for the electrochemical deposition of chemical compounds and alloys with controlled composition and/or stoichiometry |
EP2072644A1 (en) * | 2007-12-21 | 2009-06-24 | ETH Zürich, ETH Transfer | Device and method for the electrochemical deposition of chemical compounds and alloys with controlled composition and or stoichiometry |
US8475636B2 (en) | 2008-11-07 | 2013-07-02 | Novellus Systems, Inc. | Method and apparatus for electroplating |
US11549192B2 (en) | 2008-11-07 | 2023-01-10 | Novellus Systems, Inc. | Electroplating apparatus for tailored uniformity profile |
US8858774B2 (en) | 2008-11-07 | 2014-10-14 | Novellus Systems, Inc. | Electroplating apparatus for tailored uniformity profile |
US9260793B2 (en) | 2008-11-07 | 2016-02-16 | Novellus Systems, Inc. | Electroplating apparatus for tailored uniformity profile |
US9309604B2 (en) | 2008-11-07 | 2016-04-12 | Novellus Systems, Inc. | Method and apparatus for electroplating |
US10920335B2 (en) | 2008-11-07 | 2021-02-16 | Novellus Systems, Inc. | Electroplating apparatus for tailored uniformity profile |
US20100116672A1 (en) * | 2008-11-07 | 2010-05-13 | Novellus Systems, Inc. | Method and apparatus for electroplating |
US10017869B2 (en) | 2008-11-07 | 2018-07-10 | Novellus Systems, Inc. | Electroplating apparatus for tailored uniformity profile |
US8540857B1 (en) | 2008-12-19 | 2013-09-24 | Novellus Systems, Inc. | Plating method and apparatus with multiple internally irrigated chambers |
US9464361B2 (en) | 2010-07-02 | 2016-10-11 | Novellus Systems, Inc. | Control of electrolyte hydrodynamics for efficient mass transfer during electroplating |
US10190230B2 (en) | 2010-07-02 | 2019-01-29 | Novellus Systems, Inc. | Cross flow manifold for electroplating apparatus |
US9624592B2 (en) | 2010-07-02 | 2017-04-18 | Novellus Systems, Inc. | Cross flow manifold for electroplating apparatus |
US10233556B2 (en) | 2010-07-02 | 2019-03-19 | Lam Research Corporation | Dynamic modulation of cross flow manifold during electroplating |
US8795480B2 (en) | 2010-07-02 | 2014-08-05 | Novellus Systems, Inc. | Control of electrolyte hydrodynamics for efficient mass transfer during electroplating |
US9394620B2 (en) | 2010-07-02 | 2016-07-19 | Novellus Systems, Inc. | Control of electrolyte hydrodynamics for efficient mass transfer during electroplating |
US10323332B2 (en) * | 2011-06-06 | 2019-06-18 | United Microelectronics Corp. | Electrical chemical plating process |
US20160319450A1 (en) * | 2011-06-06 | 2016-11-03 | United Microelectronics Corp. | Electrical chemical plating process |
US9909228B2 (en) | 2012-11-27 | 2018-03-06 | Lam Research Corporation | Method and apparatus for dynamic current distribution control during electroplating |
US9834852B2 (en) | 2012-12-12 | 2017-12-05 | Novellus Systems, Inc. | Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating |
US10662545B2 (en) | 2012-12-12 | 2020-05-26 | Novellus Systems, Inc. | Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating |
US9523155B2 (en) | 2012-12-12 | 2016-12-20 | Novellus Systems, Inc. | Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating |
US10301739B2 (en) | 2013-05-01 | 2019-05-28 | Lam Research Corporation | Anisotropic high resistance ionic current source (AHRICS) |
US9670588B2 (en) | 2013-05-01 | 2017-06-06 | Lam Research Corporation | Anisotropic high resistance ionic current source (AHRICS) |
US9449808B2 (en) | 2013-05-29 | 2016-09-20 | Novellus Systems, Inc. | Apparatus for advanced packaging applications |
US9899230B2 (en) | 2013-05-29 | 2018-02-20 | Novellus Systems, Inc. | Apparatus for advanced packaging applications |
US9752248B2 (en) | 2014-12-19 | 2017-09-05 | Lam Research Corporation | Methods and apparatuses for dynamically tunable wafer-edge electroplating |
US9567685B2 (en) | 2015-01-22 | 2017-02-14 | Lam Research Corporation | Apparatus and method for dynamic control of plated uniformity with the use of remote electric current |
US9816194B2 (en) | 2015-03-19 | 2017-11-14 | Lam Research Corporation | Control of electrolyte flow dynamics for uniform electroplating |
US10014170B2 (en) | 2015-05-14 | 2018-07-03 | Lam Research Corporation | Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity |
US10923340B2 (en) | 2015-05-14 | 2021-02-16 | Lam Research Corporation | Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity |
US9988733B2 (en) | 2015-06-09 | 2018-06-05 | Lam Research Corporation | Apparatus and method for modulating azimuthal uniformity in electroplating |
US10094034B2 (en) | 2015-08-28 | 2018-10-09 | Lam Research Corporation | Edge flow element for electroplating apparatus |
US10364505B2 (en) | 2016-05-24 | 2019-07-30 | Lam Research Corporation | Dynamic modulation of cross flow manifold during elecroplating |
US11047059B2 (en) | 2016-05-24 | 2021-06-29 | Lam Research Corporation | Dynamic modulation of cross flow manifold during elecroplating |
US11001934B2 (en) | 2017-08-21 | 2021-05-11 | Lam Research Corporation | Methods and apparatus for flow isolation and focusing during electroplating |
US10781527B2 (en) | 2017-09-18 | 2020-09-22 | Lam Research Corporation | Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating |
Also Published As
Publication number | Publication date |
---|---|
CN1531028A (en) | 2004-09-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20040149584A1 (en) | Plating method | |
US20070238265A1 (en) | Plating apparatus and plating method | |
US20020020627A1 (en) | Plating apparatus and plating method for substrate | |
US20040234696A1 (en) | Plating device and method | |
US6706422B2 (en) | Electroless Ni—B plating liquid, electronic device and method for manufacturing the same | |
US8029653B2 (en) | Electroplating apparatus and electroplating method | |
WO2005123988A1 (en) | Method of barrier layer surface treatment to enable direct copper plating on barrier metal | |
US20070158202A1 (en) | Plating apparatus and method for controlling plating solution | |
US20120145552A1 (en) | Electroplating method | |
US20090020434A1 (en) | Substrate processing method and substrate processing apparatus | |
US20060086618A1 (en) | Method and apparatus for forming interconnects | |
US6746589B2 (en) | Plating method and plating apparatus | |
EP1532668A1 (en) | Substrate processing apparatus and substrate processing method | |
JP2004218080A (en) | Plating method | |
US7901550B2 (en) | Plating apparatus | |
JP4423359B2 (en) | Plating method | |
US20090095634A1 (en) | Plating method | |
US7479213B2 (en) | Plating method and plating apparatus | |
US20070181434A1 (en) | Method and apparatus for fabricating metal layer | |
US20040055893A1 (en) | Wafer backside electrical contact for electrochemical deposition and electrochemical mechanical polishing | |
JP5564171B2 (en) | Plating apparatus and plating method | |
US20060219566A1 (en) | Method for fabricating metal layer | |
JP2010007153A (en) | Plating apparatus and plating method | |
US7442282B2 (en) | Electrolytic processing apparatus and method | |
JP2007254882A (en) | Electroplating device and electroplating method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: EBARA CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:NAGAI, MIZUKI;MISHIMA, KOJI;KANDA, HIROYUKI;REEL/FRAME:015210/0047 Effective date: 20040113 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |