TW451434B - Semiconductor device and method for manufacturing substrate of the same - Google Patents

Semiconductor device and method for manufacturing substrate of the same Download PDF

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Publication number
TW451434B
TW451434B TW089105662A TW89105662A TW451434B TW 451434 B TW451434 B TW 451434B TW 089105662 A TW089105662 A TW 089105662A TW 89105662 A TW89105662 A TW 89105662A TW 451434 B TW451434 B TW 451434B
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TW
Taiwan
Prior art keywords
hole
substrate
layer
layers
holes
Prior art date
Application number
TW089105662A
Other languages
English (en)
Inventor
Masanori Iijima
Masaru Kanwa
Seiji Ueno
Munetomo Morioka
Original Assignee
Fujitsu Ltd
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Publication date
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Application granted granted Critical
Publication of TW451434B publication Critical patent/TW451434B/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4635—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating flexible circuit boards using additional insulating adhesive materials between the boards
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
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  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

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經濟部智慧財產局員1消費合作社印製 45以 34 A7 Γ ------β£____ 五、發明說明（1 ) 發明背景 1.發明領域 纟發明-般係有關半導趙元件及製備其基材之方法， i更明碟地’係有關半導體元件及用以製備半導體元件之 I材之方法n個或數個半導雜晶片係被置於其基材 上。.一 近年來，具向密度半導體晶片之增加發展，半導體晶 片上所提供之端子數目亦被增加。現在，諸如BGA(球柵 F車m型半導體元件等之半導想元件（其間半導趙晶片係被 置於其基材上）被廣泛使用於全世界。 因此，其間置放半導體晶片之基材亦需具有足以支撐 置放之半導體晶片之端子之數目之增加之密度。 2.相關技藝之描述 傳統上，半導體元件之基材一般具有數層結構，於已 知之多層結構中’積累層藉由積累方法施用至陶瓷多層基 材或印刷佈線基材。半導體晶片係可以面向下之狀態接合 至多層基材。 有關多層基材之製備方法，於陶瓷多層基材之情況中 此方法包含之步驟係： 形成原生態之數個通孔-孔洞； 以諸如鎢漿料等之導電性物料填充數個通孔孔洞； 藉由印刷方法於原生片材上形成佈線圖案： 使數個原生片材堆疊，然後使其等壓在一起；及 藉由燒結方法使被壓製之原生片材燒結。 本紙張尺度適用中0國家標準Kr.-SM·!規格（210 X 297公芨） 4 -裝 訂---------綠 (請先閱讀背面之注意事項再填寫本頁) Λ7 !____B7___ 五、發明說明（2 ) 於印刷多層基材之情況中，此方法可包含下述步驟： 以銅葉於玻璃環氧層上形成圖案； 以黏著劑堆疊數個玻璃環氧層； 以鑽子於玻璃環氧層上形成數個穿孔； 以銅電鍍穿孔，以形成可用以使該等層形成電之相互 連接之核心基材； 於核心基材上形成絕緣層；及 藉由減去方法或半添加方法於絕緣層上形成佈線圖案 ，然後，重複此步驟至積累層完成為止。 再者’日本早期公開專利申請案第i丨_54934號案揭示 用於半導體元件之多層佈線基材。所揭示之多層佈線基材 係藉由使數個膜狀單一側電流基材被堆疊於其間數個穿孔 被形成之核心基材之二相對表面上而形成。 每一膜狀單側電流基材包含絕緣基部及被提供於絕緣 基部上之黏著劑層。絕緣基部具有數個通孔孔洞及連接至 , 數個通孔孔洞之佈線層。再者’於數個通孔孔洞上，其個 別被提供數個凸出物’其係自絕緣基部凸出且電連接至通 孔孔洞。 因島黏著劑層係提供於絕緣基部上，數個凸出物係被 置於黏著劑層闽：因而被建構之單側電流基材藉由加整_ 加熱方法堆疊在一起，且層間連接係藉由使數個凸出物連 接至淹線層而實現' 但是，於其間陶瓷多層基材被作為半導體元件基材之 丨n中.因為你線圖案係接由印刷方法形成，此情:·兄遭4異 (請先閱璜背面之注意事項再填寫本頁 •裝'-- 訂 ^^4部智"-?讨4 活 Krx消費合".社,:'-'1*···.·; ---------線------------- 3 Α7 Β7 五、發明說明（3 ) 受限於形成細微圖案之缺點。基於此原因，陶瓷多層基材 係不適於其間置於其上之半導體晶片之密度及接連端子之 數目被進一步增加之半導體元件。 再者1需考量原生片材於陶瓷多層基材燒結期間收縮 。基於此原因，其稜面直徑需被設計成大到足以接收層間 之通孔。但，此一遭受佈線刻線不能被製成足夠細之缺點 。再者’廣泛使用陶瓷多層基材之另一缺點係陶瓷材料之 高成本。 另一方面’於其間印刷基材被作為其上形成積累層及 被置放細微佈線之半導體元件基材之情況中，半導體元件 基材藉由重複置放佈線及藉由膜形成技術（諸如，曝光及 顯像）於每一層上形成通孔之方法而變成多層基材。但是 ，此情況係費成本、費時及堆疊層之數目被限制。 再者，曰本早期公開專利申請案第11-54934號案揭示 一種多層佈線基材。於所揭示之多層佈線基材中，單侧電 路基材包含絕緣基材及黏著劑層，其中通孔孔洞於絕緣基 材上形成且凸出物於黏著劑層上形成β但是，於此結構中 ，通孔孔洞及凸出物需於絕緣基材與黏著劑層間之邊界表 面上彼此接連。 因此，通孔孔洞及凸出物被個別提供，因而通孔孔洞 及凸出物間之接點上之強度變弱。因此，於置放半導體元 件期間，絕緣基材及黏著劑層被加熱，且自其間熱膨脹係 數差異而形成之應力被施用至通孔孔洞及凸出物間之接點 。結果，通孔孔洞與凸出物間之接點因應力而受損。 本紙張尺度適用令國國家楳準（CN'S)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝--------訂---------線 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明說明（4 ) 發明综述 本發明之一般目的係提供一種半導體元件及用以製備 其基材之方法，其中上述缺點可被克服。 本發明之另一且更明確之目的係提供一種半導體元件 及用以製備其基材之方法，丨中高密度、高可靠性及低成 本之佈線層及於其内提供之通孔可被達成。 本發明之上述目的及其它目的可藉由一種半導體元件 達成 '其包含： 基材，其具有交替堆疊之數個有機絕緣基材層及數個 黏著劑層，及置於該疊層間且藉由使用通孔電相互連接之 層間佈線；及 半導體晶片，其係置於該基材上； 該通孔之每一者具有通孔孔洞，其係貫穿該有機絕緣 基村層及該黏著劑層而形成；及金屬通孔，其係被置於該 通孔孔洞内且係由相同物料製得s 本發明之上述目的可藉由製備基材之方法獲得，該基 材係具有交替堆疊之數個有機絕緣基材層及數個黏著劑層 -及間層佈線，其係被置於該堆疊層間且藉由使用藉由於 通孔孔洞巧提供金屬物料而形成之通孔而電相互連接， 該製備方法包含下述步驟： U)交替地堆疊該黏著劑層及該有機絕緣基材層，以 形成基材主體： (hi形成該通孔孔洞.如此該通孔孔洞貫穿該基材主 -------------裝--------訂i n It n n I (請先閱讀背面之注意事項再填冩本頁} 4 3 經濟部智慧財產局8 Η消費合作社印製 Α7 Β7 五、發明說明（5 ) (C)形成導電性金屬膜，如此，該導電性金屬膜覆蓋 該基材主體之一側上之該通孔孔洞； (d) 使用電解電鍍方法（其中該導電金屬膜被作為電極） 以於該通孔孔洞内形成該金屬通孔元，且同時於該基材主 體内形成該層間佈線；及 (e) 其後*移除該導電金屬膜。 本發明之特徵及優點之較佳瞭解可參考下述之其間利 用本發明原則之例示實施例之本發明詳細描述及附圖而獲 得。 圖示簡要說明 第1圖係顯示依據本發明之第一實施例之半導體元件 之戴面圖； 第2A至2H圖係例示用於形成第一實施例之半導體元 件之多層可撓性基材之製備方法； 第3圖係顯示用於形成第一實施例之半導體元件之多 層可掩性基材之放大圖； 第4圖係顯示第3圖之多層可撓性基材之改良之載面圖 * 第5圖係圖示第3圖之多展可撓性基材之改良之製備方 法： 第6圖係顯示依據本發明之第二實施例之半_導趙元件 之載面圖； 第7圖係顯示依據本發明之第三實施例之半導體元件 之截面圖； I紙張尺度卵中S S家標準(CNS)A4 ‘格（210 X 297公t ) ---- ------------ --------訂---------- (請先閱讀背面之注意事項再填寫本頁) Λ；
五、發明說明（6 ) 第8圖係顯示依據本發明之第四實施例之半導體元件 之載面圊： 第9圊係顯示用以形成第目實施例之半導體元件之多 層可撓性基材之放大圖； 第丨〇圖係顯示第9圖之多層可撓性基材之改良之截面 圖：且 第丨1A至1丨Η圖係例示依據本發明之用以製備多層可 撓性基材之方法，其中通孔及佈線層被同時形成。 較佳實施例之詳細描述 參考圖示’本發明之較佳實施例將於其下描述之。 第1圖係顯示依據本發明之第一實施例之半導體元件 之戠面圖。如此圊所示者’半導體元件丨〇α具有Bga( 球格柵陣列）結構，其包含半導體晶片Η、多層可撓性基 材12Α及數個焊料球丨9。 因為半導體晶片11係具高密度之半導體晶片，其具有 於其置放表面11 a上形成之數個端子。於數個端子上，其 事先個别提供數個焊料凸出物13。半導體晶片丨！係以面向 下狀態結合至多層可撓性基材12 A，於半導體晶片11及多 層可撓性基材i 2A之間’下充填樹脂14A被引入以避免應 力（其1¾由其間之熱膨張係數差異形成其被集中施於數 個凸出物1 3。 各層可撓.;、生基材Γ2Α包含數個有機絕緣基材層1 5 A至 1 _數個暝狀之黏著劑層1 6A至16C *數個佈線層1 7A至 1及數個通札孔洞iSA至丨8C _ (請先閱讀背面之注意事項再填寫本頁
¾¾邹智慧財產局員Η消费合作蛀f!:_K 裝--------訂---------線-----------------
A7 45u34 _B7_ 五、發明說明（7 ) 數個有機絕緣基材層15A至15C係膜狀及可撓性之基 材層，其係由有機樹脂（諸如，環氧樹脂、聚醯亞胺樹脂 等）製得，且具有1.5-5.0之介電常數。因此，藉由使用具 有低介電常數之此等薄樹脂膜形成有機絕緣基材層15A至 15C，多層可撓性基材12A之電性質（特別是，高頻率性質） 可變好s此外，佈線層ΠΑ至17C係於有機絕緣基材層15A 至15C下形成。 另一方面，黏著劑層16A至16C(其係相同於有機絕緣 基材層15A至15C之膜狀層）係由熱固化或光固化之環氧樹 脂、聚醯亞胺樹脂、矽樹脂或氱酸酯樹脂製得。於堆疊狀 態中，黏著劑層16A至16C作為接觸有機絕緣基材層15A 至15C，如第1圖所示者。 有機絕緣基材層15A至15C及黏著劑層16A至16C被交 替堆疊在一起。即，有機絕緣基材層15A及黏著劑層16A 、有機絕緣基材層15B及黏著劑層16B及有機絕緣基材層 15C及黏著劑層16C彼此個別配對。 通孔18A至1 8C之每一者包含貫穿有機絕緣基材層 15A至15C及黏著劑層16A至16C之通孔孔洞23及通孔孔洞 23内提供之金屬通孔元26(參見第2C至2£圖）。特別地，通 孔18A被建構成貫穿有機絕緣基材層15A及黏著劑層16A '通孔18B貫穿有機絕緣基材層15B及黏著劑層16B，且通 孔18C貫穿有機絕緣基材層15C及黏著劑層16C。 有關通孔18A，其底部部份連接至佈線層ΠΑ，且其 頂部部份結合至接至多層可撓性基材12A之半導體晶片！ ！ *國國家標準（CNS)A4規格⑵0 x观公爱) _ 1〇 ·- -------^---- Ί--------訂---------繞 r (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧财產局員工消費合作社印製 Λ； _________ Β7 五、發明說明（8 ) 之凸出物丨3。有關通孔18Β，其底部部份連接至佈線層17Β ’且其頂部部份結合至佈線層丨7Α。有關通孔1 8C，其底 部部份連接至佈線層1 7C，且其頂部部份結合至佈線層} 7B 因此，佈線層17 A至1 7C係經由通孔〗8 A至〖8C相互連接 另一方面，佈線層丨7C(其係多層可撓性基材12A之最 低層）被供以數個焊料球19，其作為接連端子。 因此 '半導體晶片1 1經由凸出物丨3、佈線層1 7 A至1 7 C 及通孔18A至18C電連接至數個焊料球19。 此間’需；·主意形成通孔1 8 A至丨8 C之通孔孔洞2 3每一 者係形成細微修短之錐狀。因此，如圖所示，每—通孔孔 /Π -3之2表面係以傾斜表面形成。再者，每一通孔孔洞23 之直杻（參見第2C圖）被設計成範圍為2(^]11與7〇pm之間， 小於傳統陶瓷多層基材之通孔孔洞者。 通孔孔洞23係藉由適於細微處理之雷射方法形成（其 後討論），.因此，有機絕緣基材層15人至15(：及膜狀黏著劑 層16Α至16C係由有機樹脂材料製得，且雷射方法被用以 於其上形成通孔孔洞23。結果，具有細微直徑之通孔孔洞 之每一者可輕易且有效形成貫穿有機絕緣基材層15 Α至 i 5C及膜狀之黏著劑層丨6八至丨6C。 換s之有機絕緣基材層1 5 A至1 5C及膜狀黏著劑層 〗6 A 丨h C係由有機樹脂物料（諸如‘環氧樹脂 '聚醞亞胺 等|製得.不同於傳統之陶瓷多層基材此等有機樹脂物 丰Μ諸如環氧.樹脂.聚醯亞胺等丨無需於形成基材]^期 請先間讀背面之2意事項再填冩本頁 .裝
i 1 I 訂 -- ---I--I ---I . ^/434 A7 B7 五、發明說明（9 ) —· ^— (請先閱讀背面之注意事項再填寫本頁) 間被燒結’藉此由於燒結而產生之原生片材之收縮不會產 生。再者’有機樹脂物料可輕易被處理，因此，孔洞23可 輕易於其上形成》 另一方面，有關用於形成金屬通孔元26之物料，導電 金屬（諸如’ CU(銅）、Ni(鎳）、焊料等）可被選擇》金屬通 孔元26係於個別之通孔孔洞23内藉由其後描述之電鍍方法 形成。 如前所述，通孔孔洞23係貫穿有機絕緣基材層丨5A至 15C及膜狀黏著劑層I6A至16C而形成，且金屬通孔元26係 於個別通孔孔洞23内形成。於此結構中，金屬通孔元26係 由相同物料且於個別通孔孔洞23内製得。即，金屬通礼元 26係以連續結構建構，其中於有機絕緣基材層15A至15C 與膜狀黏著劑層16A至I6C間之邊界上無任何接點。 因此，藉由用相同物料於通孔孔洞23内形成金屬通孔 元26，置放半導體元件10A中之多層可撓性基材12A之可 靠性可被改良。 經濟部智慧財產局—工消費合作社印製 即，當半導體元件10A於其置放中被加熱時，其被認 為應力可由於有機絕緣基材層15 A至15C與膜狀黏著劑層 16A至16C間之熱膨脹係數差異而產生。應力會損及通孔 18A至18C。因此，若通孔18A至18C具有於面向其間之邊 界之位置内之結點，其強度係若的，其可能使其此等結點 如前所述受損之。 因此，藉由於個別通孔孔洞内形成具有相同物料之金 屬通孔元26，通孔18A至18C可被形成，且於面向邊界之 12 本紙張尺度適用t s囷孓標準（CNS)A4規格（2〗0 X 297公藿） A7 Γ_- ________Β7 ，- ' 五、發明説明（1〇 ) ~ ~ 位置内無接點’因此’其強度變強。於此結構中，即使上 述應力被施用於有機絕緣基材層15A至15C與膜狀黏著劑 層16A至16C間之邊界，通孔18A至1SC不會受損，結果， 多層可撓性基材12A之可靠性（即，半導體元件ioa之可靠 性）可被改良。 此外’多層可撓性基材12A具有於其表面上提供之框 元件20 ’其上係置放半導趙晶片Η。框元件2〇用以圍繞多 層可撓性基材12 A。矩形孔洞於框元件20之中央形成，經 由該孔洞’半導體晶片11被置於基材12A上。 有關可被用以製備框元件20之物料，諸如Cu、Ni、 AlSiC、42合金等之金屬可為適當者；或諸如氧化鋁、富 銘紅柱石、玻螭陶瓷、I化鋁等之無機物料可為適當者； 或諸如FR-4、FR-5、BT樹脂等之有機物料可為適當者。 再者，框元件20可藉由使用諸如環氧化物、聚醯亞胺、氟 酸醋、矽等之有機黏著劑固定多層可撓性基材12Αβ 此間’下述係依據第2Α至2Η圖及第3圖之有關製備第 —實施例之多層可撓性基材12Α之方法。 第2Α至2Η圖係圖示製備多層可橈性基材12Α之方法 如第2Α圖所示為製備多層可撓性基材丨2 a，有機絕 蝝基材層15A及膜狀黏著劑層16A被製備= 然後，如第2B圖所示，膜狀黏著劑層16A黏著至有機 絕緣基材層15A。 其後如第2C圖所示‘通孔，孔洞藉由使用雷射處理 (請先閲讀背面之注意事項再填寫本頁 裝 ___ 丁 '1· 經濟部智慧財產局員工消費合作社印製 7：〇 .............................................. . 45/ 4 A7 B7 五、發明說明（11 ) 裝置發射光線至有機絕緣基材層15A而形成，如此，此等 孔洞23貫穿有機絕緣基材層15A及膜狀黏著劑層16A。 用於此實施例之雷射可為激元雷射或二氧化碳雷射， 其共振波係短的且其可藉由有力之輸出應用至細微處理。 相較於傳統之通孔孔洞（其係藉由機械處理形成），藉 由施行此一雷射處理，通扎孔洞23(每一者具有範圍為 20μπι至70μπι之細微直徑R)可輕易及有效形成。此外，通 孔孔洞23之每一者係如第2C圖所示之呈短切錐形。 如第2D圖所示，當通扎孔洞23被形成時，金屬膜25 被施用至膜狀黏著劑層16Α。金屬膜25(其可為諸如銅膜 等之導電金屬膜）用以覆蓋通孔孔洞23。 然後，如第2Ε圖所瞭解者，有機絕緣基材層15Α(於 其上，金屬膜25被施用至膜狀黏著劑層16Α)係滲入電鍍 槽（未示出）内。於電鍍槽内，電解電鍍被施行，於期間， 金屬膜25係作為電極。因此，通孔元26係於個別通孔23孔 洞内藉由電解電鍍形成。 此時，因為通孔孔洞23係以貫穿有機絕緣基材層15 A 及膜狀黏著劑層16A而形成，藉此電鍍之金屬通孔元26之 每一者被保持於均勻且連續之狀態，而無任何結點於其間 形成。再者，因為金屬通孔元26於個別通孔孔洞23内藉由 電鍍方法形成，金屬通孔元26之形成可被確定且輕易完成 ，即使通孔孔洞23之直徑係細微的。 如第2F圊所示，於金屬通孔元26個別於通孔孔洞23 内形成後，金屬膜25被移除且藉此形成通孔18Α» 本纸張尺度適用中國g家標準（CNS)A4規格（210 *297公釐） (請先閱讀背面之注音？事項再填寫本頁) 裝--------訂---------線 經濟部智慧財產局員工消費合作社印製 14 沒肯邹智慧財4蜀_工涔费合;1;.-?± Λ7 _______ L37 五、發明說明（l2 ) 其次’如第2G圖所示’佈線層丨7A依據預定圖案於有 機絕緣基材層1 5 A下形成；佈線層1 7 a接連至通孔1 8 A。 形成佈線層！ 7A之方法可為消除方法、半添加方法或添加 方法= 於怖線層1 7因而形成於有機絕緣基材層丨5 a下之後， 如第G圊所示，包含有機絕緣基材層丨5 a、模狀黏著劑層 16A、通孔18A及佈線層17A之第一單一零件被形成3 其次，如第2A至2G圊所示方法被重複，以便形成包 含有機絕緣基材層1 5 B、膜狀黏著劑層16 B、通孔I 8 B及佈 線層17B之第二單一零件。因此，如第2H圖所示，第二單 一零件係附接至第一單一零件之有機絕緣基材層15A之底 表面ύ 再者’重複第2 Α至2G所示之方法’包含有機絕緣基 材層丨5C '暝狀黏著劑層16C、通孔18C及佈線層17c之第 二早一零件可被形成°其後，如第2H圖所示，第三單一 零件係附接至有機絕緣基材層1 5B之底表面= 由第3圖可看出，包含第一至第三單一零件之多層可 撓性基材1 2A可藉由重複先前所述之如第2A至2G圖所示 之方法而带成之。 然後半導體晶片以下翻狀態結合至多層可撓性基材 Ϊ2.Α ’然後下充填樹脂μα引八其間。再者，藉由提供 植7L件-〇圍繞半導體晶片丨丨，如第1圖所示之丰導體元件 ΗΜ被完成· 第4及.—圖係圖示多層可撓性基材！_ 2 8!其係上述多層可 -------------裝.-------訂---------線 <請先閱讀背面之;1意事項再填寫本頁>
45 45 經濟部智慧財產局8工消費合作社印製 A7 B7 五、發明說明（u ) 撓性基材12A之改良）及用以製備此改良物之方法。 如第4圖所示’不同於多層可撓性基材12A，於多層 可撓性基材12B中，尖銳部份29個別於通孔18八至丨8(：之端 部上提供。此結構中具有之優點係於第2G至2H圖之堆叠 方法期間’因為通孔18B係以堆疊於佈線層17A内之其尖 銳部份2 9狀態連接至佈線層17 A，其間之電連接可被改良 。相似地，於第2H至3圖之堆疊方去期間，通孔丨8C與佈 線層17B間之電連接亦可被改良。 再者’於半導體晶片11被結合至多層可撓性基材12B 時，因為尖銳部份29於通孔I8A之端部上提供，通孔18A 係以凸出物13内之黏合狀態連接至凸出物13。因此，半導 體晶片11與多層可撓性基材12B間之電連接可被改良。 如前所述，通孔18A至18C之尖銳部份29係藉成形工 具而形成，由如第5圖所示。成形工具可為，例如，平的 矽基材或金屬板，其中數個凹部份28藉由機械處理（諸如 ，激元雷射、二氧化碳雷射等）或藉由化學處理（諸如，蝕 刻等）而形成。然後，具有數個凹部份28之工具27於第2G 圖之方法後被強烈壓於通孔18A(18B，18C)上，藉此，尖 銳部份29於通孔18A (18B，18C)之端部上形成。 其次，下列描述係有關依據本發明之第二實施例之半 導體元件10B。 第6圖係顯示第二實施例之半導體元件10B之載面圖 。於此圖示及其後描述之圖示中’與第1至4圖相同者之部 份係以相同參考編號表示’且其描述被忽略。 本紙張尺度適用國家標準（CNS)A4規格（210 x 297公釐） -16 - Λ----^--------訂---------線 (請先閱讀背面之注意事項再填寫本頁} 經濟部智慧3Γ查局員工消費合:ΐ··3ί.·ί!: Λ/ --------- - Β7__ 五、發明說明（Μ ) 不同於半導體元件10A’半導體元件10B，熱擴散器30 進—步於框元件20上提供。熱擴散器30係板元件，其係由 金屬物料（諸如，Cu(銅）、Ni(鎳）' AlSiC、42合金等）：或 無機物料(.諸如，氧化紹、mulait '玻璃陶究、&化铭等） 或有機物料（諸如，FR-4、FR-5、BT樹脂等）製得。再者 ’熱擴散器30藉由諸如環氧化物、聚醯亞胺、氰酸酯、石夕 專之有機黏著劑38固定於框元件20上。再者，於丰導體晶 片11與熱擴散器30之間，具有高導熱性之黏著劑31被引入 α 依據第二實施例之此結構，藉由半導體晶片丨丨產生之 熱經由導熱黏著劑31排放至熱擴散器30。再者，如第6圖 所示’因為熱擴散器30具有較大表面積（用以排放半導體 晶片Π產生之熱）’熱可有效排放至外側。再者，依據第 —貫施例’半導體晶片丨1被包含於藉由多層可挽性基材 UA ·框元件20及熱擴散器30所形成之中空殼室内，因此 ’半導體晶11之保護可被確保， 其次，其後係有關依據本發明之第三實施例之半導體 元件10C之描述 第·7圖係圖示第三實施例之半導體元件1〇c之載面圖 不同於半導體元件1 0B，於半導體元伴i〇c中' 數個排 熱Μ 33被進一步提供於熱擴散器30上： 裝--------訂—-------線 (讀先閒;i背面之;,i意事項再填寫本頁} 數個排熱Μ 33之每一者係由金屬物料或無機物料製得 其4一者诔具有高的導熱性，且其形狀係蜂巢狀、如此 其涑Μ長面.叮被增大，再者 '數涵排熱片3 3係藉由導煞
性黏著劑3 1固定於熱擴散器30上。因此，藉由於熱擴散器 30上提供導熱黏著劑31，半導體晶片η之熱排放性質可被 進—步改良。 此外，於第三實施例中，除藉由導熱黏著劑31固定於 熱擴散器30上’排熱片33可藉由機械方法（使用螺絲、套 筒等）固定於其上。 其次’下列描述係有關依據本發明之第四實施例之半 導體元件10D。 第8圖係顯示第四實施例之半導體元件1〇D之載面圖 。第9圖係圖示用於半導體元件i〇D内之多層可撓性基材 12C。 不同於第1圖之第一實施例之半導逋元件l〇A，於半 導體元件10D中，其具有開口部份，其係於面向半導體晶 片11之多層可撓性基材12C之位置内形成•再者，用以保 護半導體晶片11之密封樹脂36係於開口部份35内形成。密 封樹脂36可由例如環氧樹脂形成，且係藉由鍵結方法於其 間形成。 此間’需注意開口部份之面積被設計成小於半導體晶 片11者’因為開α部份35係依半導體晶片〗1上提供之凸出 物而定其尺寸及位置。即，如第8圖所示，開口部份35係 形成一位置，其外側係形成凸出物13 β 依據此結構，於半導體晶片11藉由面向下之鍵結方法 結合至多層可撓性基材HC之後，下充填樹脂14Β可經由 開口部份35引入其間。 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） f請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------線 經濟部智慧財產局_工消費合作社S ^ 18 經^郎智慧时產^這工消費合1;.."1-·-'···;。；.·： Λ7 ______B7__ 五、發明說明（μ ) 因此，相較於其間下充填樹脂丨4A自半導體晶片丨1之 外周圍引入之其它實施例，於第四實施例中，下充填樹脂 14B自内側引至半導體晶片丨1之外側可省時且降低間隙之 產生。因此，藉由形成先前所述之開口部份3 5，下充填樹 脂丨4B可被更有效且均勻引入= 此外’第1 〇圖係顯示多層可橈性基材12D之裁面圖， 其係第9圊之多層可撓性基材12C之改良。如第1 〇圖所示 ‘開口部份3 5係提供於多層可撓性基材12D上.其中具有 尖銳部份29之通孔1 8 A至1 8C被形成。此改良能有助益於 上述之相同作用= 於先述實施例中，於多層可撓性基材12A至12D上提 供之通孔18A至18C係以使金屬元26藉由使用相同材料於 通孔孔洞23内形成。於此結構中，其於通孔丨8 a至1 内 無結點=因此，即使應力被施用至有機絕緣基材層丨5 A至 15C及膜狀黏著劑層丨6A至16C之邊界，通孔18A至18C將 不會受損，因此’多層可撓性基材12A至12D之可靠性可 被改良；再者' 於用以形成多層可橈性基材12 A至12D之 方法中，於金屬通孔元26藉由通孔形成方法於通孔孔洞23 内形成後，滿線層I 7 A至丨7 C藉由非通孔形成方法之方法 形成之 因形成通孔1 8 A至1 8C之方法係不同於佈線層17 a至 丨者 '通孔丨至！ 8Γ及佈線層ΠΑ至！ 7C需彼此結合」 但是其間邊思上之接合強度係比連讀形成之金屬通孔元
々者诉基Θ玟學因 '當％乃被施闬至 '通孔.! 8 A至18C -------------裝--------訂---------線 {請先閱讀背面之注意事項再填寫本頁)
經濟部智慧財產曷員工消費合作社印製 A7 B7 五、發明說明（17 ) 及佈線層17A至17C間之邊界時，其可能使邊界受損。再 者，麻煩的是佈線層17A至17C係藉由非形成通孔18A至 18C之方法形成。 為克服此等缺點，下述係有關多撓性基材I2E及其製 備方法，參考第11圖。此外，於第II圖中，相同於第2圖 中者之零件係以相同编號表示，且其描述被省略。 不同於多層可橈性基材12A至12D，其中佈線層17A 至17C係自通孔18A至18C個別形成，於多層可撓性基材 12E中，佈線層17D及17E係一起以通孔18D及18E(其係由 金屬元38及39製得）形成。 如第11A圖所示，為製備此實施例之多層可撓性基材 12E，有機絕緣基材層15A及膜狀黏著劑層16A被製備。 然後，如第11B圖所示，膜狀黏著劑層16A被施用至 有機絕緣基材層15A，如此，此二層形成基材主體40A。 其後，如第11C圖所示，雷射光藉由雷射處理裝置自 有機絕緣基材層15A之侧發射，以便形成貫穿基材主體40A 之孔洞23。 此間所用之雷射可為激元雷射及二氧化碳雷射，其振 動波長短且其可藉由有力之輸出施用於細微處理。 藉由施行雷射處理，通孔孔洞23之每一者形成短切錐 狀，如第11C圖所示。此時，短切通孔孔洞23之垂直角0( 其範圍可為10°至90°)係藉由控制輸出動力及軍射發射角 而控制。 如第11D圖所示，當通孔孔洞23因而形成時，金屬膜 衣纸張尺度適用中國S家標準（CNS)A4規格（210 X 297公釐） 20 — — (— — — ΙΓΙΙ— ----I I 1 I t 111111! ·!^ (請先閱讀背面之注意事項再填寫本頁) Λ7
五、發明說明（is ) -5被施用至膜狀黏著層1 6A 3金屬犋25(其可為諸如銅膜 等之導電金屬膜）作為覆蓋通孔孔洞。 再者‘如第1 ! E圖所示，阻性物37被提供於有機絕緣 基材層1 ：) A下。此等阻性物3 7係於非其間形成佈線層丨7D 之位置上=此外’此等阻性物3 7係光阻物且係藉由已知之 照像石版技術形成。 然後，由第2E圖可瞭解，基材主體4〇A(其間金屬膜25 被施用至膜狀黏著劑層16A)被滲入電鍍檜内（未示出）。於 電鍍檜内，電解電鍍被施行’於期間，金屬膜25係作為電 極。因此，通孔元38係於個別通孔23孔洞内形成，且佈線 層1 7 D亦連續形成。換言之，於電解電鍍方法期間，金屬 通孔元3 8係先沿通孔孔洞23之内壁沈積，其後，佈線層1 7D 沈積於其間未提供阻性物37之位置。 第11E圖顯示其間金屬通孔元38於通孔孔洞23之内壁 形成及持續形成佈線層17D之狀態。於此狀態中，被沈積 之金屬通孔元3 8僅於通孔孔洞23内成凹部份，而未充填通 孔孔洞23。 其後.如第11F圖所示，藉由連續施行電解電鍍，金 屬通孔元3 8進一步沈積於凹部份上，至通孔孔洞23藉由金 •I通孔元38填充為止·
如第UG圖所示.於金屬通孔元38因而於通孔孔洞23 闷形成後·金屬膜2自其移除’藉此形成通孔丨8D :於此 逯孔丨8D結櫞士 .因為通孔孔洞23貫穿有機絕緣基材層丨5 A 及祺抹黏著劑層丨6A 電鍍金屬通孔元38被保持連續態而 -------------裝--------訂---------線------------------- (請先閱^背面之沒急事項再填寫本頁)
經濟部智慧財產局員工消費合作社印S A7 B7 五、發明說明（19 ) 無接點。
再者*於此實施例中，因為金屬通孔元38及佈線層17D 係整體形成，其具有連續結構而無任何結點。 因此，通孔18D之強度變強而足以避免通孔18D受損
’即使於應力被施用至有機絕緣基材層15A與膜狀層16A 間之邊界或施用至金屬通孔元3 8及佈線層17D間之邊界。 結果，基材之可靠性（即，半導體元件之可靠性）可被改良 〇 需注意為連續形成金屬通孔元38及佈線層17D，通孔 孔洞23需被形成短切錐狀之形狀。數個實驗已對各種不同 形狀之通孔孔洞23施行。結果，於其間通孔孔洞像圓柱形 之情況中，或於其中通孔孔洞23像逆式短切錐狀之情況中 ，金屬通孔元38及佈線層17D不能被連續形成。再者，垂 直角0被定為〇°至90°之範圍，其有助於使金屬通孔元38 被沈積及確定形成於通孔孔洞23内之效率。 如前所述’於通孔18D及佈線層17D被同時形成於有 機絕緣基材層15A及膜狀黏著劑層16A内後，基材主體40A 被完成。然後，第11A至11G圖所示之方法被重複以便形 成基材主體40B ’其係包含有機絕緣基材層15B、膜狀黏 著劑層16B、通孔18E及佈線層17E。 如第11H圖所示’藉由使基材主體附接至第iig圖之 有機絕緣基材層15A，多層可撓性基材12E可因而製得。 此外，第11H所示之多層可撓性基材12E具有二層結 構，但是，藉由重複上述方法，具有多於二層之多層可撓 本纸張尺度適用中國國家標準（CNS)A·!規格（210 X 297公釐） 22 --------^---- ------I I ^ -------線 ^ (請先閱讀背面之沒意事項再填寫本頁)
性基材可輕易製備。 I I H _ 上述栺述被提供以使熟習此項技藝者能製得及使用本 發明且以發明人之最佳模式完成本發明。 本發明係以日本優先申請案第n_289937號案（1999年 10月12曰申請）為基準，其全部内容在此被併入以供參考 〇 需瞭解此間所述之本發明實施例之各種改變可被用以 施行本發明欲以下述申請專利範圍界定本發明範圍且此 等申請專利範圍界定範圍内之結構及方法因而被涵蓋。 -H ί . -I I , 裝i 請先間讀背面之注意事項再填寫本1、
JIT .線· 經濟部智慧时產咼員工消費合作社，^:·/·,:—、
34 A7 B7 五、發明說明（21 元件符號對照 10A, 10B, 10C, 10D, 10E 20…框元件 …半導體元件 23…通孔孔洞 11…半導體晶片 25…金属膜 11a…置放表面 2 6…金属通孔元 12A, 12B, 12C, 12D, 12E 27…工具 …多層可撓性基材 28…凹部份 13…焊料凸出物 29…尖銳部份 14A, 14B…下充填樹脂 30…熱擴散器 15A至15C…有機絕緣基 31…導熱黏著劑 材層 33···排熱片 16A至16C…膜狀黏著劑層 35···開口部份 17A 至 17C, 17D, 17E 36…密封樹脂 …佈線層 37··.阻性物 18A至 18C , 18D, 18E 38…有機黏著劑 …通孔孔洞 40A，40B…基材主體 19…焊料球 -----------It·-------訂'-----! 線 1 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 表紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 24

Claims (1)

  1. 4 3 4 A8B8C8D8 力' 申請專利範圍 L 種半導體元件，包含： 、、之/¾舞林其具有交替堆疊之數個有機絕緣基材層及 數個#著着i層，及被置於該堆疊層間且藉由使用通扎 電連接之層間佈線；及 置於該基材上之半導體晶片； 該通孔之每一者具有貫穿該有機絕緣基材層及該 黏著劑層而形成之通孔孔洞，及置於該通孔孔洞内且 由相同物料形成之金屬通孔元。 2. 如申請專利範圍第1項之半導體元件，其中： 該基材包含於面向該半導體晶片之位置内形成之 開口： 翁：》' 該半導體晶片係藉由面向下之結合方法結合至該 :基柯；及 充填樹脂被引入該半導體晶片與該基材之間。 3. 如申請專利範圍第丨項之半導體元件，其中該通孔孔洞 係形成短切錐狀之形狀。 4· 一種製備基材之方法，該基材具有交替堆疊之數個有 機絕緣基材層及數個黏著劑層，及被置於該堆疊層間 且藉由使用以於通孔孔洞内提供金屬物料而形成之通 孔電連接之層間佈線， 該製備方法包含下述步驟： (a) 交替地堆疊該黏著劑層及該有機絕緣基材層， 以形成基材主體； (b) 形成該通孔孔洞’如此該通孔孔洞貫穿該基材 本纸張叉度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝·！ 11訂· — — — — —--- 經濟部智慧財產局員工消費合作钍印絜 25 8 05825 AKCD 6,如申請專利範圍第4項之製 以短切錐狀成形。 . pn 久如申請專利範圍第6項之製備 3法
    夂、申請專利範圍 主體： (C)形成導電性金屬膜，如此，該導電性金屬膜覆 蓋該基材主體之一側上之該通孔孔洞； (d)使用電解電鍍方法（其中該導電金屬膜被作為 電極）以於該通孔孔洞内形成該金屬通孔元，且同時於 該基材主體内形成該層間佈線；及 0)其後’移除該導電金屬膜。 5.如申請專利範圍第4項之製備V方法.其中形成該通孔孔 洞之步驟係藉由雷射方法施行之。 其中該通孔礼洞係 其中該短切之通孔 孔洞具有0°至90°範圍之垂直角 -------------裝·-------訂·--------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消t合作iie.k
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