TW321781B - - Google Patents
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- TW321781B TW321781B TW084113486A TW84113486A TW321781B TW 321781 B TW321781 B TW 321781B TW 084113486 A TW084113486 A TW 084113486A TW 84113486 A TW84113486 A TW 84113486A TW 321781 B TW321781 B TW 321781B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- sidewall spacer
- adhesion layer
- reactive
- forming
- Prior art date
Links
- 239000000463 material Substances 0.000 claims description 88
- 125000006850 spacer group Chemical group 0.000 claims description 59
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 42
- 150000004767 nitrides Chemical class 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 238000011049 filling Methods 0.000 claims description 16
- -1 misnitride Chemical class 0.000 claims description 16
- 229910021332 silicide Inorganic materials 0.000 claims description 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000003989 dielectric material Substances 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 238000004377 microelectronic Methods 0.000 claims description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 229910003437 indium oxide Inorganic materials 0.000 claims description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 62
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 239000004575 stone Substances 0.000 claims 2
- JNSHJDXBICHABV-UHFFFAOYSA-N 11-oxatetracyclo[7.5.0.02,7.010,12]tetradeca-1(9),2,4,6,13-pentaene Chemical compound C12C(C=CC=3C4=CC=CC=C4CC13)O2 JNSHJDXBICHABV-UHFFFAOYSA-N 0.000 claims 1
- 239000012790 adhesive layer Substances 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 150000001639 boron compounds Chemical class 0.000 claims 1
- 238000002309 gasification Methods 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 239000011135 tin Substances 0.000 description 27
- 229910052718 tin Inorganic materials 0.000 description 27
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 26
- 230000008021 deposition Effects 0.000 description 19
- 229910052681 coesite Inorganic materials 0.000 description 14
- 229910052906 cristobalite Inorganic materials 0.000 description 14
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 14
- 229910052682 stishovite Inorganic materials 0.000 description 14
- 229910052905 tridymite Inorganic materials 0.000 description 14
- 239000003990 capacitor Substances 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 229910007991 Si-N Inorganic materials 0.000 description 7
- 229910006294 Si—N Inorganic materials 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910008486 TiSix Inorganic materials 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910008479 TiSi2 Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910018509 Al—N Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910000457 iridium oxide Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- SJLOMQIUPFZJAN-UHFFFAOYSA-N oxorhodium Chemical compound [Rh]=O SJLOMQIUPFZJAN-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- 229910003450 rhodium oxide Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- GSJBKPNSLRKRNR-UHFFFAOYSA-N $l^{2}-stannanylidenetin Chemical compound [Sn].[Sn] GSJBKPNSLRKRNR-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000931705 Cicada Species 0.000 description 1
- HEFNNWSXXWATRW-UHFFFAOYSA-N Ibuprofen Chemical compound CC(C)CC1=CC=C(C(C)C(O)=O)C=C1 HEFNNWSXXWATRW-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910000629 Rh alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910010282 TiON Inorganic materials 0.000 description 1
- JXOOCQBAIRXOGG-UHFFFAOYSA-N [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] Chemical compound [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] JXOOCQBAIRXOGG-UHFFFAOYSA-N 0.000 description 1
- VEUKJXRCHYAIAW-UHFFFAOYSA-N [Nb].[K] Chemical class [Nb].[K] VEUKJXRCHYAIAW-UHFFFAOYSA-N 0.000 description 1
- NSXCBNDGHHHVKT-UHFFFAOYSA-N [Ti].[Sr].[Ba] Chemical compound [Ti].[Sr].[Ba] NSXCBNDGHHHVKT-UHFFFAOYSA-N 0.000 description 1
- 239000002671 adjuvant Substances 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910021357 chromium silicide Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000035622 drinking Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 229910000048 titanium hydride Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
經濟部中央樣隼局員工消费合作社印製 321781 A7 B7 五、發明説明(/ ) 相關申請案 下列申請案與本發明同時提申♦· 標題 發明人 檔案编號/ 申請案號 Impoved High-Dielectric-Constant Material Electrodes Comprising Thin Platinum Layers Summerfelt, Beratan, Kirlin, Gnade ΤΙ-17950 08/283,881 Improved Electrodes Comprising Conductive Perovskite -Seed Layers for Perovskite Dielectrics 1 Summerfelt, Beratan ΤΙ-17952 08/283,468 Improved Hi gh-D electric-Constant Material Electrodes Comprising Thin Ruthenium Dioxide Layers Summerfelt, Beratan,. Kirlin, Gnade * ΤΙ-19153 08/283,442 Pre-oxidizing High-Dielectric-Constant Material Electrodes Nishioka, Summerfoit, Park, Bhattacharya ΤΙ-19189 08/283,467 A Conductive Amorphous-Nitride Barrier Layer for High-Dielectric- Constant Material Electrodes Summerfelt ΤΙ-19554 08/283,441 A Conductive Exotic-Nitride Barrier Layer for High-Dielectric-Constant Material Electrodes Summerfelt ΤΙ-19555 08/283,873 A Conductive Noble-Metal -Insulator-Alloy Barrier Layer for High-Dielectric- Constant Material Electrodes Summerfelt, Nicolet, Reid, Kolawa Τ1-19556 08/283,454 (請先閱讀背面之注意事項再填寫本頁) i 訂 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) A7 B7 五、發明説明(2 ) 下列已申請的申請案與本發明有關 標題 發明人 檔案编號/ 申請编號 Improved Electrical Connections to Dielectric Materials Gnada, Summerfelt 08/009,521 Improved Electrical Connections to Dielectric Materials Gnade, Summerfelt 08/260,149 ___――- Lightly Donor Doped Electrodes for High- Dielectric-Constant Materials .·; Summerfelt, Beratan, Gnade 08/040,940 Lightly Donor Doped Electrodes for High- Dielectric-Constant Materials Summerfelt, Beratan, Gnade TI-17660.1 08/276,191 Improved Electrode Interface for High- Dielectric-Constant Materials Summerfelt, Beratan 08/041,025 I. - I I m Ξ --1 J n H ϋ tn i I ,1T (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準扃負工消费合作社印装 4 發明領域 本發明一般係關於對具有高介電常數的材料改進其電連接 ,如電容之結構。 發明背景 下列背景説明並不在於限制本發明,本發明背景之例子與 對高介電常數材料形成電連接的現行方法有關。 積體電路(如DRAM)密度增加亦增加了用於電子裝置例如電 容的高介電常數材料的需要。一般而言,電容直接與電容介質 相接觸的電極之表面區域相關,但是受電極體積的影響有限。 一般用於達成每單位面積較高電容的現行方法,係由増加幾何 本紙張尺度適用中國國家標率(CNS) A4規格(210><297公釐) 經濟部中央標準局貝工消費合作社印製 A7 B7 五、發明説明(3 ) 分佈而增加每單位面積之表面積,如在溝槽或疊積電容中使用 Si〇2或Si02/Si3N4作爲介電質,但是在如256Mbit及1Gbit DRAM 的製造中此方法變得非常困難。 一種替代的方法是使用高電容率介電材料,許多 peroskite,熱電,鐵電或高介電常數(下文縮寫成HDC)材料如 (Ba,Sr)/Ti03(BST)通常其電容密度高於標準Si〇2-Si3N4-Si〇2電 容。不同的金屬及金屬化合物,基本上爲貴金屬,如Pt,及導 電氧化物,如Ru〇2,已用於作爲這些HDC材料的電極。爲了能 在電子裝置中有效用,必需架構可信賴的電連結,其不會消除 這些高介電常數材料的有利性質。 發明概述 在本文中,"高介電常數"意謂著在裝置的操作溫度中,介 電常數大於約50者。HDC材料沉積通常在含氧之大氣中於高溫 下(通常大於約500度c)發生。在此環境下許多電極材料氧化且 成爲絶緣或品質惡化。在HDC材料沉積前形成的原始電極結構 在沉積期間或之後必需呈穩定態,而隨後在此沉積之後所形成 的電極結構只需要在沉積後保持穩定即可。 如上文中所述,在標準的薄膜(在本文中定義爲小於5微 米)應用,已建議Pt作爲HDC材料層的電極。然而,雖然Pt不與 HDC材料反應,但是吾人已發現很難只用pt作爲原始電極。Pt 一般允許氧氣擴散通過其本身,因此基本上將使鄰近材料氧化 。此外,Pt亦通常無法良好地附著至傳統的介電質,例如Si〇2 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁) ,4. -s* 32”8l at ___Β7_ 五、發明説明(4 ) ~〜 或SisN4 ’且Pt在低溫下可快速形成矽化物。因此已建議在豇電 極下使用Ta或TiN層作爲附著或缓衝層。但是在BST沉锖期間, 氧氣可能可擴散過Pt並氧化附著層而使附著層較不易導電。因 此在附著層侧邊上的問題可能大於頂部水平表面,因爲pt一般 在頂部較厚,且爲一較好擴散障壁。 在標準的薄膜應用中,導電氧化物如Ru〇2已建議作爲Η% 材料層的電極。而且雖然Ru〇2相對於HDC材料爲不反應者,但 是其本身也有一些困難。例如,使用這種氧化物形成的結構之 電性通常劣於其他如由Pt形成者。許多的薄膜應用,除了每單 位面積的大電容外,尚需要小的漏電流密度。漏電流對多種變 數感到敏感,如厚度,微結構,電極,電極幾何形狀及組成。 例如使用Ru〇2電極的鉛鍺鈦化物比使用pt電極的PZT的漏電流 大了好幾階。特别是,漏電流係由Schottky障壁所控制,而含 Pt電極之較小漏電流則係由於較大的工作函數所致。 經濟部中央標準局員工消費合作社印製 1^1- ....... H _ — n I ! I 1^ ^^1 I m ef (請先閲讀背面之注$項再填寫本頁) 如本文中所使用之••不反應"乙詞係用於與HDC材料接觸之 材料’其意謂著在處理期間及之後,對HDC材料提供穩定導電 介面的材料。注意當一導電氧化物,如Ru〇2用於不反應層(或 電極的其他部份),該層亦包含未氧化或部份氧化之Ru。例如 ,在HDC沉積程序期間,藉由變成部份或完全氧化而改變化學 性質的Ru之不反應層仍視爲不反應者,因爲其仍對HDC材料提 供穩定之導電介面。 已提出作爲標準薄膜結構的其他結構包含Pt,Pd,Rh合金作
本紙張尺度適用中國國家榡準(CNS ) A4規格(210X 297公釐〉 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明(ir ) 爲電極以及由Re,〇s,Rh及Ir製成之氧化物作爲在單晶矽或多晶 矽上之黏附層〇這些電極的問題爲這些氧化物在相鄰矽層時通 常爲不穩定者,且這些金屬在低溫下(一般小於约450度c)通常 會快速形成矽化物。如果可使其他相關問題避免掉或達到最小 ,則此型式的電極結構甚至在HDC材料沉積後仍可維持其導電 率,假使在導電氧化物及矽基體間使用一適當的附著(障.壁)層 的話。 姑且不考慮作爲HDC材料電極的特定材料,在半導體處理 整合的區域中,某些特别的問題一般爲各個HDC材料中所共同 存在者。特别是在HDC材料沉積或退火期間(或沉積或退火之後 ),已發現在HDC材料中裂鏠形成於下電極的下及/或上角落處 。很顯然地此裂缝形成係由於HDC材料的應力禁中在相當尖銳 的下電極角落端所致。這些裂缝可由HDC材料層的上表面到達 下電極,因此產生有害的結果。例如,如果一導電屠(如使用 於電容的上電極)沉積在HDC層上時,則使得電容實質上在兩電 極間具有褥電流或甚至短路。 一般,本發明使用一包含側壁間隔物的下電極以形成具圓 角的頂表面,其上可沉積HDC材料而不會產生裂缝。本發明之 一重要觀點爲:如果與含下電極而不具側壁間隔物的相似結構 相比較,側壁間隔物並不會減低下電極及HDC材料層間的電接 觸表面區域。 顯然地側壁已使用於習知技術中,而其只產生下電極側邊 _ 7 - 7 ~ 叫4 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) I-----I-Hi 私--1---- 訂 C请先聞读背面之注意事項存填寫本頁) 經濟部中央標準局員工消費合作社印裝 A7 ____B7 _ 五、發明説明(6 ) 之電接觸表面區的耗損。可見T.Eimori等人的"A Newly Designed Planar Stacked Capacitor Cell With High Dielectric Constant Film For 256MBit DRAM"發表於 1993 年 IEEE的 International Electronic Device Meeting,第 631-634頁,地點美國華盛頓特區。在T.Eimori的結構中,绝 緣Si〇2側壁在下鉑層的側邊形成,因此可防止遑些側壁輿BST 接觸,而且與沒亥側壁的結構相比較,可降低裝置之電容。如 果能找到一種具扃组件密度的裝置時,則此項設計將更具意義 。特别是,電極可能需要方位比比習知技術裝置中爲高,以獲 得大表面區與HDC材料接觸,同時將實際使用之半導體量減至 最小。本文中的"方位比"乙詞,當用於結構之實質大小時,指 結構上高比寬之値。 在某些習知技術中,在HDC材料沉嘴期間或之後的氧擴散 可導致下層氧化。此可導致下電極變形或產生凸出部於電極中 ,此後又在HDC材料中產生裂缝。在本發明中,側壁間隔物一 般可阻止氧向相鄰層或下層之側壁擴散。因此可消除上述問題 視所使用材料,本發明的侧壁間隔物可在下電極之餘 留部位的不同位置中形成,而不減低電接觸表面區域。例如, 可在下電極叼内部形成絕緣側壁,因此使玉面的不反應層 的角落變圓而不致減低下電極接觸表面區域。電流仍從不 反應層經附著層向基體流動。在另一例予中,一導電側壁間
本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) —I— m HI. ί I- - - 1 J I— n I-— — - - - ........ (請先閲讀背面之注意事項再填寫本頁) A7 321781 B7_______ 五、發明説明(7 ) K. - - Is— 1 - 1-— 1 -1— -1-i I in —II I 1 (請先閲讀背面之注意事項再填寫本頁) 隔物可在下電極的内或外部形成。在外部的例子中,吾人意 欲側壁間隔物實質上包含不反應材料,而使下電極接觸表面區 域不會減少。 本發明之一實施例為一微電子結構,其包含一含主表 面的支撐層,在支撐層之主表面上方的下電極,及一在下電 極之頂表面上方的高介電常數材料層。下電極包含一側壁 間隔物及^頂表面,該側壁間隔物使得頂表面含一圓角 落。與不含側壁間隔物的下電極比較,側壁間隔物並不會降 低下電極及高介,常數材料層間的電接觸表面區。頂表面之 圓角落使高介電常數材料層中的裂縫形成達到最小。 形成本發明之實施例的方法包含形成一含主表面的 支撐層,在該支撐層的主表面上形成一下電極,及在該下電 極之頂表面表沉積一高介電常數材料層。下電極包含一側 壁間隔物及一頂表面,該侧壁間隔物可使頂表面含圓角 落。與不含側壁間隔物的下電極相比較,侧壁間隔物並不會 減低下電極及高介電常數材料間的電接觸表面區域。頂表 面之圓角落使高介電常數材料層中的裂缝形成達到 最小。 經濟部中央標準局員工消費合作社印製 顯然地至HDC材料之電極包含一側壁間隔物的第一 微電子結構不會消除HDC材料層下電極的有利性質。這些 結構可用於多層電容及其他薄膜裝置,如熱電裝置(如(未 冷卻)紅外偵測器),非揮發性鐵電RAM(使用永久極化性質) ,薄膜壓電及薄膜電光裝置。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) A7 B7 經濟部中央標準局貝工消費合作社印策 五、發明説明(容) 圖形簡述 本發明的顯著特性見於下列申請專利範園中。但是本發明 及其它特性及優點可於下文中的詳細說明得到更進一步的暸解 ,閲讀時並請參考下列附圖其中: 圖1-5之截面圖顯示電極製造步驟,該電極包含側壁間隔 物,且與一高介電常數材料相接觸。 圖6爲一高方位比電極的截面圖,該電極包含側壁喃隔物 ,且與一高介電常數材料相接觸。 圖7爲一電極的截面圖,該電極包含側壁間隔物,且與一 高介電常數材料相接觸。 圖8-12之截面圖顯示高介電常數材料電容製造步驟,該電 容包含有側壁間隔物之電極。 圖13-14之截面圖顯示高介電常數材料疊積電容製造爭踩 ,該電容包含有側壁間隔物之電極。 較佳會施例之詳細説明: 參考圖1-5,其中示形成本發明之實施例的方法,一下電 極結構包含一側壁間隔物,及一含圓角的頂表面,其上可沉積 HDC材料而不會導致裂缝。圖1示多晶矽塞子34形成於Si〇2層 32中’其覆蓋半導體基體30。Si〇2層32可用或不用擴散障壁層 ,如Ti〇2或Si3N4覆蓋。一 lOOnmTiN層36覆蓋TiSi2多晶矽塞子 34且構成下電極的擴散障壁層,且使用標準的濺射及蝕刻技術 形成。可使用一薄的TiSi2層改進多晶矽層及TiN層間的導電率 〇 本紙張尺度適用中國國家標準(CNS ) M規格(210X297公釐) ^^^1 ^^1· 4., ^^^1^SJ t请先閲读背面之注意事項真填寫本頁) 經濟部中央標準局貝工消費合作社印製 A7 B7 五、發明説明(y ) 圖2説明Si〇2層38之共形(conformal)氣相沉積(CVD)。只 要TiN層36的侧壁被覆蓋住,其他可能的沉積方法可包含濺射 ,旋轉覆層等。然後各向異性地乾蝕刻si〇2層38以形成側壁間 隔物40,如圖3所示者。間隔物40亦可應用溼蝕刻方法形成。 在此實施例中,Si〇2間隔物40包圍TiN層36 ’但並不是所有的 實施例皆如此。另外,間隔物數可多於一個,作爲下電蟬之一 部份。如圖3所示,Si〇2間隔物40使TiN層36的相當尖銳角落 端變圓,以製備不反應層的沉積。 然後在5m Torr Ar大氣壓力下,以Pt爲標的物,且基體溫 度爲325度下對200nm Pt層42進行DC濺射沉積,產生圖4所示 的結構。Pt層42可應用e束蒸發,CVD,或金屬有機CVD(M0CVD )方法沉積。另外,在現行的製程中,或在隨後的製程中Ru可 沉積且部份或完全轉換成Ru〇2。Pt層42的高度可視需要的HDC 材料之電容密度,所需之總電容,及裝置的產生而改變。例如 ,未來的裝置,如1G DRAM—般需有較高的電容以與256M DRAM 比較能提供較多的電極表面區域/單位區域,此係因1G DRAM 一般需要提供較多電容/單位區域(由於例如增加之功能及縮 小之裝置特性)。在Pt層42沉積後,沉積光阻且打樣。然後以 低溫、高密度電漿反應離子蝕刻(RIE)反應器乾蝕刻Pt層42。 然後製備此結構,以沉積高介電常數材料。此可因爲附著 層36之氧化率一般在HDC沉積程序開始時遠較之後爲快而完成 。因此,最好執行部份氧化,以使得在HDC沉積前該結構的氧 化狀態較不強烈。例如假始HDC材料之金屬有機化學氣相沉積( M0CVD)在650度C以ITorr的〇2持績3分鐘,則該結構在HDC沉積
本紙張尺度適用中國國家標準(CNS ) Μ規格(210X297公釐) ---------·裝— (請先閲讀背面之注意事項再填寫本頁) 訂 321781 at B7 五、發明説明(/〇 前可以600度C在ITorr之〇2中退火20分鐘。此較低的溫度一般 有某些優點如可將氧化率減慢,且假使與在完全沉積溫度進行 氧化相比,其可使Pt層42有較多的時間鬆弛。此氧化退火程序 的另一項優點爲Pt層42在蝕刻後可以重新安排,因此,使角落 處更進一步變圓。在氧化退火亦可使用Ru作爲層42以形成一 Ru〇2外殼。同樣地,在随後的處理步骤中,含下及上電極的電 容結構予以退火以改進電容性質。 如上文中所述者’ BST層44係由M0CVD技術沉積以形成圖5 所示之結構。該沉積可使用離子,光子,電子或電漿增強。亦 可由CVD,濺射或旋轉覆層方法形成。應用圖5的構構,使用 一絶緣Si〇2側壁間隔物40以形成其圓角之電極,但此不會減低 Pt層42及BST層44間的電接觸表面區域。從pt層42至基體30間 的電接觸可經TiN層36之頂部而完成。 在另一實施例中’圖6爲一高方位比的電容,且加入一pt 上電極層46。與圖5的結構相比較,TiN層36實際上高度大於 寬度。本實施例説明保持低電極侧壁的重要性,該電極與導電 子BST層44相接觸。應用此型之結構,習知技術中的不導電外 部側壁對電容性質具傷害性。 經濟部中央橾率局貝工消費合作杜印製 —^1 «^1— Mu an m 1· 0. 1 I HI (請先閲讀背面之注意事項再填寫本頁) 在另一實施例中,圖7例示一與圖5相類似的架構,唯其 中絶緣Si〇2側壁間隔物已由導電TiN側壁間隔物48取代。TiN側 壁間隔物48可應用共形沉積/各向異性蝕刻方法形成,此方法 與用於Si〇2間隔物40者相似。 參考圖8-12 ’其爲形成本發明另一實施例的方法。圖8中 顯示一形成於Si〇2層32中的TiN附著層36,其覆蓋發半導體基 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(") 體30。且在圖8中,Pt層42已予濺射沉積且乾蝕刻,以形成下 電極之不反應層。參考圖9,其中顯示一沉積於圖8之結構上 的共形Pt層50。然後對Pt層50執行各向異性乾蝕刻以形成pt側 壁間隔物52,如圖10所示。亦如圖10所示,pt間隔物52在HDC 材料層的沉積製備中,可使Pt層42中相當尖銳的角變圓。 然後,BST層44由M0CVD技術沉積,以形成圖11所示之結構 且沉積Pt上電極46以形成圖12所示之結構。應用圖12的結構, 一導電Pt側壁間隔物係用以形成一具圓角之電極。因爲Pt層52 在下電極之外部,因此其仍具導電性而使得不會減低下電極及 BST層44間電接觸表面積爲重要者。因此,一不反應材料如Pt, Pd或Ru/Ru〇2爲較佳之側壁間隔物52。 參考圖13-14,其爲形成本發明另一實施例的方法,其使 用一疊積電容結構。在此實施例中,應用覆在TiSi2層34上的 TiN層36形成一附著層,該層34覆於多晶矽層54上。應用此一 標準程序,10nm之Ti予以濺射沉積於多晶矽上’繼之以N2快速 熱退火(700度C持續30秒)或於冊3壚中退火(575度C持績10分鐘 )。此形成圖13所示的TiN/TiSk/多晶矽結構。然後使用過氧 化物選擇性地化學移除TiN。在另一方法中,可就在TiN層36沉 積前執行多晶矽層54的氣相HF清潔,而不使用TiSk層34。最 好在HF清潔及附著層沉積處理步騍之間該結構不暴露在污染環 境中,如大氣,以保證多晶矽及TiN層間形成良好之附著。
Pt層42已濺射沉積在TiN層36上,且隨後乾蝕刻以形成下電 極之不反應層。如上文所述,一共$pt層沉積在圖13的結構上 ,然後各向異性地乾蝕刻以形成Pt側壁間隔物52 ,如圖14所示
本紙張尺度適用中國國家標準(CNS ) A4規格(21〇Χ2_97公釐) m - - I I - - > - - - - - - (請先閱讀背面之注意事項再填寫本頁) A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明(p ) 。亦如圖14中所示者,Pt間隔物52將Pt層42及TiN層36的相當 尖銳角落端變面,以用於HDC材料層的沉積乏製備。然後經MOD 技術,在Pt層42及Pt側壁間隔物52上沉積BST層44,因此使 BST層44上的應力及裂缝達到最小。 下文中的附表提供一些實施例之综覽及附圖。 圈中元件 較佳或特定 實施例 通稱 其它不同例子 · 30 矽 基體 其他單一组件半導體(如 鍺,鑽石) 化合物半導體(如 GaAs,Inp,Si/Ge,SiC) 陶瓷積體 32 二氧化矽 第一身絶緣體 其他絕緣體(如氮彳^— 摻雜絕緣體(如 BSG,PSG,BPSG) 可多於一層(如在別〇2上 的 Si3N4) 可使用或不使用(如第一層 絶緣體,基體,另一絶緣層 或其組合可爲下電極之支撐 層) 上述材料之結合
本紙張尺度適用中國國家榡準(CNS > A4規格(210X297公釐) ----------於-- (請先閲讀背面之注意事項再填寫本頁) -訂 321781 Α7 Β7 五、發明説明(β 36 36/34 36/34/ 54
TiN TiN/(TiSix) /多晶碎 TiN/(TiSix) /多晶梦 附著層 經濟部中央標準局員工消費合作社印製 其他導電金屬化合物(如 氧化物:釕氧化物,餓氧化 物,铑氧化物,佐氧化物, 銦氧化物,錫氧化物) 導電金屬(不同於下面 42中的經選擇之特定金 屬)(如鎢,钽,鈦,錫,釕,銦, 蛾,銀) 三重(或更多重.)非晶氣化 物(如 Ta-Si-N,Ti-Si- N, Ta-B-N,Ti-B-N) 特殊導電氮化物(如鈦鋁 氮化物,Zr氮化物,HF氮 化物,Y ’氮化物,Sc氮化 物,La<氮化物,及其他稀土 氮化物,缺N之A丨氮化物, 摻雜A1氮化物,Mg氮化 物,Ca氮化物,Sr氮化 物,Ba氮化物) 上述特殊導電氮化物及 共同 Si處理材料如 TiN,GaN,Ni 氮化物,C0 氮 化物,Ta氮化物,W氮化物 (如Ta-Al-N)的合金 貴金屬絕緣體合金(如 Pd-Si-N,Pt-Si-N,Pd-Si- O, Pd-Si-0,Pd-B-(0,N), Pd-Al-N,Ru-Si-(0, K),Ir-Si-0,Re-Si-N,Rh-Al-0, Au-Si-N,Ag-Si-N)可爲多層(如TiN/TiSix ,TiN/TiSix/多晶矽) 1' ------ I i— 1^1- - n. -I I - - ^^1 n. 1^1 i^i、I'SJ (讀先閱讀背面之注意事項再填寫本頁) 15. 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) A7 ‘發明説明(吟 五 _____ 經濟部中央樣隼局員工消費合作社印製 —- 可爲一較含相當侵良附著 性質之層爲佳之含相畲優, 良障壁性質的層(Ru/TiN) 其他矽化物可用於混合 結構中(Ni矽化物,Co矽化 物,鎢矽化物) 38 "^sT〇7-- Pt 上述材料之結合 50 共形層 其他共形沉積絕緣體.材 料(如 Si3N4) Γ if 共形沉積金屬(如始,免, 叛,銖,姥) 共形沉積導電氧化物(如 錫氧化物,銦氧化物,銥氧 化物,釕氧化物,銦錫氧化 物) 共形沉積氧化物氮化物 (如鈦氬化物,锆氮化物 給氮化物,鈕氮化物) ’ 其他來自元件36及元件 42的材料 Α Λ 上述材料之結合 4 U sT〇7~· 側壁間隔物 來自上述元件38的材 48 TiN 52 銘 ----— (锖先》讀背面之注意事項再填寫本頁) 策· 訂 16. 本紙張尺度適用中國國家標準(CNS ) Α4規格(2!0'〆297公釐)
、發明説明 A7 B7 始 未反應層 其他惰性或鉑群金屬(如_ 免,銥,銖,铑,金,銀) 導電金屬化合物(如氧化 物,釕氧化物,錫氧化物, 鈦雙氧化物,銦氧化物,銖’ 氧化物,餓氧化物,铑氧化 物,銥氧化物;摻雜氧化 物:接雜錫,鋼或鋅氧化 物;氮化物:釕氧化物,錫 氧化物,欽氧化物,錄氮化 物) 導電似perovskite材料 (如 YBa2Cu3 07,(L s、 Co〇3,SrRu03) ' r) 上述材料之组合 上述材掛層 ----- —1— I— ml !11 ί—-- 1- i ml n IMM (請先閱讀背面之注意事項再填寫本頁} 經濟部中央標準局員工消費合作社印製 ·- —. · * -17.- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 五、發明说明(/A ) A7 B7 Ή 鋇锶鈦 4匕物 高介電常 -數材料層 '其他perovskite,熱電,鐵 電,或高介電常數氧化物 (如(Ba,Sr,CaP,Pb) (Ti,Zr) 03 ,(Pb,La)(Zr,Ti)〇 ,,鉍 鈦化物,鉀鈕化物,鉛錫鈦 化物,鉀鈮化物,鉛鋅鈮化 物,鉛鎂鈮化物,钽五氧化 物,釔氧化物) 〆 授予劑(donor),接受-劑 (acceptor),或授予劑與接 受劑之上表列的摻雜氧化 物 上述材料之組合 上述材料層 --I--I I - - I 私--n - - I ^ (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作杜印製 準 標 家 國 國 I中 ;用 適 -尺 ¥J 紙 本 18. 公 7 9. 2 321781 A7 B7 五、發明説明(/7 46 鉑 上部電極 物.飲°物(如氮化 2气化物,錯化物;氧化, 鋅氧化物 f,鈕矽化物,鎢矽化 鎳碎化物:碳1匕, =&鈇碳化物;硼化物.赴 硼化物) J,紙 始群金屬(如 紀,釕,結,金,餘,銀) 金屬(如K 電電極(如銘, 修雜Si或Ge) , 上述材赀的結合 可含多於—層 '--- ' ~--- H-. -- *^1 HI- n HI ^^1 I 衣 — - - 1^1 ^^1 - (請先閲讀背面之注意事項再填寫本頁} 經濟部中央標準局貝工消费合作社印製 在上文中已詳細說明較佳之實施例,須知本發明的觀點亦 含文中未説明之實施例而在申請專利範園内者。參考上述結構 ,至此結構的電連接可爲歐姆性,整流性,電容性,直接或間 接者,其間經插入電路等。該等裝置可以個别組件或於石夕, ’砷化鎵或其他電子材料中之完全的積體電路加以實施。— 較佳或特定的例子優於其他不同例子。下電極的某些組件有 可爲電極的一部份或有時可在電極的内,外,上, ^寺處;在 任一例中本發明的結構及方法實質上相同。 -19 - 本紙張纽適财 ϋ 目 ( CNS ) Α4Μ^· ( 210X297/^ ) A7 B7 五、發明説明(J ) 附著層可含表列中的其他材料,但以表列中的材料爲佳。 例如,附著層可包含其他金屬化合物,如釕氮化物、錫氮化物 、鎢氮化物、鉅氮化物、鉬氮化物、TiON,鈦矽化物、鉅矽化 物、鎢矽化物、鉬矽化物、鎳矽化物、鈷矽化物、鐵矽化物、 鉻矽化物、硼碳化物、鉅碳化物、鈦碳化物、錯碳化物、鈦堋 化物或鋁硼化物。另外,附著層可包舍其他導電金屬(不同於 從元件38所選擇的特定金屬)如鈷,鐵,鉻,鈀,铼,鈷,給 ,或鉬。另外,附著層可包含單組件半導體,如單或多晶矽或 鍺,或化合物半導體,如GaAs,InP,Si/Ge或SiC。 已應用較佳實施例説明本發明,上列説明並非用於限制本 發明,説明實施例之不同修飾及組合和本發明的其他實施例, 對於熟習於此一技術者可經由參考說明得到更進一步的了解。 因此下列申請專利範圍用於包含本發明的修飾例及實施例。 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 :適 度 本 準 標 家 I釐 公 ¢,
Claims (1)
- 321781 A8 B8 C8 D8 (Έ.哺充 申請專利範圍 ROC 經濟部中央標準局員工消費合作社印製 1一種形成一微電子結構的方法,該方法包含步驟如下: (a) 形成一含主表面的支撐層; (b) 在該主表面上形成一附著層,該附著層包含一形成一角 落端的侧表面及上表面; (c) 形成與該附著層之侧表面相鄰的側壁間隔物,該侧壁間 隔物鄰接該角落端; (d) 在該附著層及該侧壁間隔物上形成一不反應層,該不反 應層含一圓角落覆於該角落端上;及 (e) 在該不反應層上沉積一高介電常數材料層,此時不反應 層之圓角落使得高介電常數材料層中的裂缝形成達到最 jJ、〇 2. 如申請專利範圍第1項之方法,其中該側壁間隔物包含一絶 緣材料。 3. —種形成一微電子結構的方法,該方法包含步驟如下: (a) 形成一含主表面的支標層; (b) 在該主表面上形成一附著層; (c) 在該附著層上形成—不反應層,該不反應層具有一形成 一角落端的侧表面及上表面; -21 - 本紙張尺度適用中國國家榡準(CNS ) A4规格(210X297公瘦) 97-9TI.847A-Y —^fl (n fin If ϋ—af ms— 9 ^i^lf ^ J 分 ,va (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 A8 B8 C8 D8六、申請專利範圍 (d) 使用如同供不反應層的相同材料形成一導電側壁間隔物 與該不反應層的侧表面相鄰,該側壁間隔物鄰接該角落 端以形成一圓角落;及 (e) 在該不反應層及該侧壁間隔物上沈積一高介電常數材料 層,其中該圓角落使得高介電常數材料層中的裂缝形成 達到最小。 4. 如申請專利範圍第1或3項之方法,其中形成該侧壁間隔物 的步驟更包含: 在該附著層之上表面及該附著層之侧表面上沉積一共形( conforma1)層;及 從該上表面各向異性地蝕刻該共形層。 5. —種微電子結構,包含: (a) —含主表面的支撐層; (b) 在該主表面上的附著層,該附著層具有由一第一階層絶 緣層侧向包圍之·一下部位,及包含一第一側表面之上部 位; (c) 一不反應層,具有一上表面及一第二侧表面,位在該附 著層上; (d) 在該不反應層之上表面及該不反應層及該附著層之側表 面上的一導電共形層; (e) —導電側壁間隔物,與該不反應層及該附著層之侧表面 相鄰,其中該不反應層及該側壁間隔物包含一具有圓角 -22 - 装 訂 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐} A8 B8 C8 D8 _____________ 申請專利範圍 落的頂表面; (f) 在該不反應層及該側壁間隔物之頂面上的高介電常數枋 料層;及 (g) 在該高介電常數材料層上的上電極。 & 一種微電子結構,包含: (a) —含主表面的支撐層; (b) 在該主表面上的一附著層,該附著層包舍一形成一角落 端的側表面及上表面; (0與該附著層之侧表面相鄰的一侧壁間隔物,該侧壁間隔 物鄰接該角落端; (d) 在該附著層及該侧壁間隔物上的一不反應層,該不反應 層含一圓角落覆於該角落端上;及 (e) 該不反應層上的一高介電常數材料層,此時不反應層之 圓角落使得高介電常數材料廣中的裂缝形成達到最小。 7·—種微電子結構包含: (a) —含主表面的支撐層; (b) 在該主表面上的一附著層; (c) 在該附著層上的一不反應層’該不反應層具有一形成一 角落端的侧表面及上表面; U) —導電側壁間隔物’與該不反應層的側表面相鄰且使用 如同供不反應廣的相同材料,該側壁間隔物鄰接該角落 端以形成一圓角落;及 -23 - ---I I ----'装------訂 (请先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS ) ( 210X297公釐) Α8 Β8 C8 D8#、申請專利範圍 經濟部中央橾準局員工消費合作社印裝 ⑷在該不反應収該悔_物上的—高介電常數材料層 ’其中該圓角落使得高介電常數材料層中的裂缝形成達 到最小。 1申Γ利範圍第6或7項之結構,其中該附著層的下部位 破一第一階層絶緣體側向包圍。 9.==範圍第1或3項之方法,其中該側壁間隔物從下 :中選擇:銘’鈀’銥’練,,錫氧化物,減化物, =㈣4氧化物’㈣氧化物’鈇氮化物,錯氣化物, 給氮化物,姐氮化物,二氧化石夕,石夕氮化物及立组合。 二2專利_第6或7項之結構,其中該側壁間隔物 2中選擇踢氧化物,銦氧化物, 銶氧化物,耗化物,㈣氧化物,鈥氮化物,錯氮化物, 給氮化物,趣氮化物,二氧化石夕,石夕氮化物及其組合。 江如申請專利_第i或3項之方法,其中該附著層從下列群 中選擇:導電金屬’導電金屬氮化物,導電金屬氧化物,導 電金屬矽化物,導電金屬碳化物’導電金屬硼化物三重非 晶氮化物及其組合。 瓜如申請專利範圍第6或7項之結構,其中該附著層從下列群 中選擇··導電金屬’導電金屬氮化物,導電金屬氧化物,導 電金屬矽化物,導電金屬碳化物,導電金屬硼化物,三重非 晶氮化物及其組合。 货如申請專利範圍第6或7項之結構,在該高介電常數材料層 -24 I— 1^1 ml m m .....1_ t 1-=n I i 1--1 V J. (請先閲讀背面之法意事項再填寫本頁) 本紙張尺度適用中國國家榡準(CNS ) ( 2丨〇><297公董) 321781 鉍 C8 D8 六、申請專利範圍 上更包含一上鉑電極。 J4.如申請專利範圍第1或3項之方法,其中該步驟(d)更包含 形成該侧壁間隔物與該附著層之第二側表面相鄰,且該附著 層之一下部位被一第一階層絶緣體側向包圍。 (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印製 -25 - 本紙張尺度適用中國國家標隼(CNS ) Μ規格(210X297公釐)
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US5392189A (en) * | 1993-04-02 | 1995-02-21 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same |
US5381302A (en) * | 1993-04-02 | 1995-01-10 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same |
-
1994
- 1994-08-01 US US08/283,871 patent/US5489548A/en not_active Expired - Lifetime
-
1995
- 1995-06-07 US US08/483,804 patent/US5605858A/en not_active Expired - Lifetime
- 1995-06-07 US US08/486,565 patent/US5656852A/en not_active Expired - Lifetime
- 1995-07-25 EP EP95111684A patent/EP0697717A1/en not_active Withdrawn
- 1995-08-01 KR KR1019950023643A patent/KR100371891B1/ko not_active IP Right Cessation
- 1995-12-18 TW TW084113486A patent/TW321781B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US5605858A (en) | 1997-02-25 |
KR960009058A (ko) | 1996-03-22 |
US5489548A (en) | 1996-02-06 |
EP0697717A1 (en) | 1996-02-21 |
KR100371891B1 (ko) | 2003-05-01 |
US5656852A (en) | 1997-08-12 |
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