TW320743B - - Google Patents

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Publication number
TW320743B
TW320743B TW083110662A TW83110662A TW320743B TW 320743 B TW320743 B TW 320743B TW 083110662 A TW083110662 A TW 083110662A TW 83110662 A TW83110662 A TW 83110662A TW 320743 B TW320743 B TW 320743B
Authority
TW
Taiwan
Prior art keywords
type
concentration
domain
impure
substrate
Prior art date
Application number
TW083110662A
Other languages
English (en)
Chinese (zh)
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW320743B publication Critical patent/TW320743B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H10W10/00—
    • H10W10/01—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 

Landscapes

  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW083110662A 1994-10-25 1994-11-17 TW320743B (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6260400A JPH08125180A (ja) 1994-10-25 1994-10-25 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW320743B true TW320743B (cg-RX-API-DMAC10.html) 1997-11-21

Family

ID=17347392

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083110662A TW320743B (cg-RX-API-DMAC10.html) 1994-10-25 1994-11-17

Country Status (4)

Country Link
US (1) US5623154A (cg-RX-API-DMAC10.html)
JP (1) JPH08125180A (cg-RX-API-DMAC10.html)
KR (1) KR100211635B1 (cg-RX-API-DMAC10.html)
TW (1) TW320743B (cg-RX-API-DMAC10.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661082A (en) * 1995-01-20 1997-08-26 Motorola, Inc. Process for forming a semiconductor device having a bond pad
JP2778550B2 (ja) * 1995-09-08 1998-07-23 日本電気株式会社 半導体集積回路の製造方法
JPH1050994A (ja) * 1996-08-05 1998-02-20 Sharp Corp 半導体装置の製造方法
JPH118387A (ja) * 1997-06-18 1999-01-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH11204786A (ja) * 1998-01-14 1999-07-30 Mitsubishi Electric Corp 高耐圧絶縁ゲート型電界効果トランジスタを有する半導体装置およびその製造方法
US6555894B2 (en) * 1998-04-20 2003-04-29 Intersil Americas Inc. Device with patterned wells and method for forming same
US6072216A (en) * 1998-05-01 2000-06-06 Siliconix Incorporated Vertical DMOS field effect transistor with conformal buried layer for reduced on-resistance
US6225662B1 (en) * 1998-07-28 2001-05-01 Philips Semiconductors, Inc. Semiconductor structure with heavily doped buried breakdown region
KR100393200B1 (ko) * 2001-02-20 2003-07-31 페어차일드코리아반도체 주식회사 정전기적 방전으로부터의 보호를 위한 필드 트랜지스터 및그 제조방법
US6586817B1 (en) 2001-05-18 2003-07-01 Sun Microsystems, Inc. Device including a resistive path to introduce an equivalent RC circuit
KR101044609B1 (ko) * 2003-12-01 2011-06-29 매그나칩 반도체 유한회사 반도체소자 및 그 형성방법
RU2428764C1 (ru) * 2010-03-09 2011-09-10 Государственное образовательное учреждение высшего профессионального образования Кабардино-Балкарский государственный университет им. Х.М. Бербекова Способ изготовления полупроводникового прибора

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4649629A (en) * 1985-07-29 1987-03-17 Thomson Components - Mostek Corp. Method of late programming a read only memory
JPS63300567A (ja) * 1987-05-29 1988-12-07 Nec Corp 浮遊ゲ−ト型絶縁ゲ−ト電界効果トランジスタ
JP2727552B2 (ja) * 1988-02-29 1998-03-11 ソニー株式会社 半導体装置の製造方法
JP2897215B2 (ja) * 1988-07-15 1999-05-31 ソニー株式会社 半導体装置の製造方法
JPH02133929A (ja) * 1988-11-15 1990-05-23 Fujitsu Ltd 半導体装置およびその製造方法
JPH0399430A (ja) * 1989-09-12 1991-04-24 Mitsubishi Electric Corp 半導体装置の製造方法
JPH04196341A (ja) * 1990-11-28 1992-07-16 Hitachi Ltd 半導体装置の製造方法
US5466957A (en) * 1991-10-31 1995-11-14 Sharp Kabushiki Kaisha Transistor having source-to-drain nonuniformly-doped channel and method for fabricating the same
JPH05335568A (ja) * 1992-05-29 1993-12-17 Toshiba Corp 半導体装置及びその製造方法
JP3435173B2 (ja) * 1992-07-10 2003-08-11 株式会社日立製作所 半導体装置
JP2848757B2 (ja) * 1993-03-19 1999-01-20 シャープ株式会社 電界効果トランジスタおよびその製造方法

Also Published As

Publication number Publication date
JPH08125180A (ja) 1996-05-17
KR100211635B1 (ko) 1999-08-02
US5623154A (en) 1997-04-22
KR960015858A (ko) 1996-05-22

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