TW315528B - - Google Patents

Download PDF

Info

Publication number
TW315528B
TW315528B TW085111461A TW85111461A TW315528B TW 315528 B TW315528 B TW 315528B TW 085111461 A TW085111461 A TW 085111461A TW 85111461 A TW85111461 A TW 85111461A TW 315528 B TW315528 B TW 315528B
Authority
TW
Taiwan
Prior art keywords
crystal
carrier
semiconductor
radiation
groove
Prior art date
Application number
TW085111461A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=7773661&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW315528(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from DE19536454A external-priority patent/DE19536454B4/de
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of TW315528B publication Critical patent/TW315528B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

315528 經濟部中央標準局員工消費合作社印製 五、發明説明（丨） 本發明係關於一種_射式發射及/或接收之半導體姐 件，其中有一輻射式發射及/或接收之半導體晶片固定 在導線架之晶片載體上，且其中該半導體晶片和至少一 部份晶片載體區域是由封裝所圍繞。 此種半導體狙件例如已揭示在歐洲專利文件EP400176 中。該文件揭示一種所IS頂端（top)LED(發光二極體）， 其中有一半導體晶片固定在導線架之平面式晶片載體上 。導線架由晶片載體和與晶片載體分開配置之連接件所 構成，各有其外部接黏。含有半導體晶片之晶片載體， , 連接件及外部接點之一部份區域由封装所圍繞，封裝包 含輻射不能穿透之基體及輻射可穿透之窗口，基體上有 凹口，窗口則填滿此凹口。晶片載體和連接件由基體所 圍繞或嵌入基體中，使晶片載體和連_接件上面之部份區 域和凹口之其餘底面成水平。半導體晶片除了其下面靠 在晶片載體上之外，半導體晶Η完全被輻射可穿透之窗 口所圍繞。完全被輻射可穿透之窗口所填滿之凹口的形 式需使其能形成半導體姐件輻射用之反射器。 本發明之目的是發展一種輻射式發射及/或接收之半 導體組件，其形式需使其有一增加之輻射強度且能Μ簡 易之方式生產。同時，此半導體組件可容易由半導體晶 片散熱。 此一目的可藉具有申請專利範圍第1項或第2項特徽 之半導體組件達成。 在申請專利範圍第1項之半導體姐件中，本發明中之 (請先閲讀背面之注意事項再填寫本頁) Τ .裝------訂 ---1— -!! I - ........ ......... 1----........... In ^m· I -I .....-I . 本紙張又度適用中國國家揉準（CNS ) Μ规格（210Χ297公釐） 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（> ) · 晶片載體在半導體晶片固定之區域中形成一槽，槽之内 表面需設計成可形成半導體晶片發射及/或接收之輻射 所用之反射體，且晶片載體至少具有兩·涸由封裝之不同 點凸出之外部電氣接點，。 在申請專利範圍第2項之半導體組件中，本發明中之 晶片載體‘在半導體晶片固定之區域中形成一槽，槽之內 表面需設計成可形成半導蹑晶片發射及/或接收之輻射 所用之反射體，且此晶片載體之槽至少有一部份由此封 裝凸出，使晶片載體可電性及/或熱學上連接至此槽之 , 區域中。 在本發明之半導體姐件的較佳實施例中，導線架具有 晶片載體和連接件，連接件配置於雛晶片載體某一距雛 處，具有由封裝之兩相對邊·凸出之外部接點。 在本發明之半導體組件的較佳實施例中，至少晶片載 體之槽的某些内表面需以增強反射之材料塗佈。 在本發明之半導體姐件的有利實腌例中，晶片載體之 外部接點較連接件之外部接點遷寬。 在本發明之半導體组件的特別有利的實施例中，封装 上具有一個輻射不可透過之基體，基體上有凹口以及配 置在凹口內之幅射可透過之窗口，此輻射不可透過之基 體至少圍繞晶片載體之一部份區域，使至少晶Η載體中 之槽能配置在凹口中。 在本實施例之有利發展中，槽之上方*緣在凹口之上 方邊緣的下方延伸，未被槽覆蓋之凹口的内表面之一部 -4- 本紙浪尺度適用中國國家標準（CNS ) A41格（210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁)
f 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（4 ) 份區域設計成可形成一個反射體Μ輻射由半導體晶片所 發射之光束。 在本發明之半導體姐件的進一步有利發展中，辐射不 可透過之基體的凹口中某些內表面Μ可增強反射之材料 塗佈。 申請專利範圍之各附靨項之涉及本發明進一步之有利 發展。 f 本發明Μ下將利用與第la匾至第3圖相闞之實施例作 更詳细之說明。圖式簡單說明如下： , 第U圖顯示本發明之半専體姐件的第一實施例之平面 圖。 第lb圖顯示沿第la圖之锿A-A所示之切面圖。 第lc圓顯示沿第la圖之線B-B所示之切面疆I。 第2a画顯示本發明之半導體組件的第二實施例之平面 圖。 第2b圖顯示沿第2a圖之線C^C所示之切面匾。 第3圖顯示本發明半導體姐件的第三實胞例之切面圖。 第la圖至第lc鼸之半導體組件是一種所謂形成表面安 裝元件之頂端LED,其由金鼷導線架構成，包含晶片載體 2和連接件10,兩者均具有兩個外部連接區11,12,固定 在晶片載體2上之可輻射的半導體晶片1, K及平行管 道式之封裝3 。半導體晶H1在其上側和下側各有接觸 金靨層16,17。在下側之接觸金屬層17導電性地連接至 晶片載體2 ，例如藉金鼷焊接或導電性黏帶，在上側之 -5 - 本紙張尺度適用中國國家榡準（CNS ) A4规格（210X297公釐） __- - - ----------------- 11 H^1. in —- 5 ·, V. (請先閲讀背面之注意事項再填寫本頁)
、1T ，線丨· 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（* ) 接觸金靨層16藉連结線20専電性地連接至連接件10，連接 件10例如由金或其它適當之金靨材料構成。槽4例如可 藉浮凸式形成在半導體晶片1所固定之晶片載體2之區 域中，此槽之內表面5.大約近似於上下倒置之截角维形 狀且形成半導體晶片1輻射所需之反射體。晶片載體2 和連接件10兩者之外部連接區11,12各由此封裝3之相 對邊凸出且在封裝3之外部沿著封装3彎曲，首先往下 ，然後向內往封裝3之中央。然而，它們亦可具有任何 其它所希望之形式。 , 封裝3在輻射不可透過之基體7的兩個部份中產生， 基體7具有凹口 8和填滿此凹口 8之轜射可透過的窗口 9 。基體7和窗口 9由例如填入式合成樹脂或熱塑膠構 成，其分別可為透明之合成樹脂或聚合碳酸鹽。用於合 成樹脂之適當填充物例如可為金屬粉，金饜氧化物，金 鼷碳酸鹽或金鼷矽酸鹽。晶片載體2和連接件10由輻射 不可透過之基體7圍繞，或埋入基體7中，使連接件10 之部份區域和槽4所在之晶片載體2之至少一部份區域 靠在凹口 8之底部表面19上。凹口 8較槽4還深，结果 槽4完全配置在凹口 8之内且該凹口 S之内表面13往上 凸出超過槽4。 在第一實施例之較佳發展中，槽4之内表面Μ及和窗 口 9相郯之連接件10上面的可能亦為内表面之部份會被 磨光或以增強反射之材料塗佈Μ改良反射性能。可增強 反射之適當材料例如可為亮漆或鋁，可用蒸氣沈積，噴 -6 - 本紙張尺度適用中國國家標率（CNS ) Α4規格（210 X 297公釐） m i ml m n ml —^^1· £ · X (請先閱讀背面之注意事項再填寫本頁) --'^ 315528 A7 B7 五、發明説明（f ). 鍍或其它適當之方法來腌加此種材枓。同樣地，未被晶 片載體2和連接件10覆蓋之內表面13亦可設有增強反射 之層，其结果為內表面13亦可在所希望的主輻射方向6 反射半導體晶片1所發出之輻射。在鋁或亮漆例如亦適. 合此目的，可利用上述之方法施加此二種材料。 亦可設計成使凹口 8不完全被窗口 9所填滿，而是只 有半導體晶片1和槽4或凹口 8之任何其它所期望之部 份區域被窗口所圍繞或覆蓋。同樣地，可將窗口 9製成 凸出於凹口 8之上邊緣（upper edge)。 r 為了改進半導體晶片1之熱發散，如第2a圖和第2b圖 所示（在第一實施例中之情运亦同），則晶片載體2之外 部連接區11較連接件10之外部連接區12寬是可能的。同 樣地，若需要或可能，只有一個外部連接區U或多個（ 22)外部連接區11可由晶片載體2之封裝凸出。同樣情 況適用於連接件1 0。 依據本發明第一實施例產生半導體姐件的可能方法中 ,若基體7由抗熱塑膠或其它抗高溫材料所構成，則首 先將導線架Μ基體材料封装是可能的，然後將半導體晶 片和連结線固定，最後將凹口 8 Μ窗口 9之材料填入。 第2a画和第2b画所示之第二實施例和第一實_例不同 之處只在於其晶片載體2需埋入基體7中使槽4之底壁 18由下側之基體突出。结果，可與晶Η載體2作直接之 外部接觸，例如，讨藉連结或焊接而直接連接至印刷電 路板。而且，在此實腌例中，晶片載體2之外部連接區11 本紙張尺度適用中國國家標率（CNS. ) A4規格（2丨Ο X M7公釐） (請先閎讀背面之注意事項再填寫本頁) 裝--- 經濟部中央標隼局員工消費合作社印製 A7 B7 五、發明説明（‘） 較連接件1Q之外部連接區12寬。這些尺寸可各自或組合 起來以確保半導體晶H1有改良之熱發散。 本發明上述有關第一實施例之半導體組件的所有發展 和改良亦可在第二實施例中實現。 依據第3圖之第三實施例和上述第一實施例之不同點 為：封裝3完全由輻射可透過之材料製成，例如由透明 之合成樹脂製成。在此情況中，在第一實施例所述之所 有改良亦可適用。 第四實施例和第二實施例之所有特擻中除了封裝外， 其餘均相同，第四實施例之封裝完全由透明材料製成。 依據本發明之上述各實施例並不限於使用可輻射之半 導體晶片1,亦可使用光二極體，光電晶體和其它可接 收輻射之半導體晶片。槽4在此情況中需設計成使經由 窗口 9射入之輻射在半導體晶片之方向反射。 請 先 閲 讀^ 背， A 注 意 事· 項 填丨 I裝 頁 钉 I線 經濟部中央標準局員工消費合作社印製
·. I 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐）

Claims (1)

  1. '
    經濟部中央樣隼局員工消費合作杜印复 申請專利範圍 第85111461號「光霄半導體組件」專利案（87年3月修正） ，申請專利範圍 1. 一種光電半導體组件，其傜以表面安裝元件（SMD)之 方式構成且可發射及/或接收輻射，其中發射及/或 接收輻射之半導®晶K (1)偽固定在導線架之晶Η載體 (2)上，導综架是由晶片載證（2)和連接件⑽所構成，連 接件0Q則配置於矩晶片載體（2)某一距離處，半導體晶 Η (1)及至少晶Η載體（2)之部份區域以及連接件（Ρ的 一部份傜由封裝（3)所圍嬈，其持歡為：晶片載證（2) 在半導體晶Η (1)所固定之區域中形成一槽（4),該槽 (4 )之内表面（5 )設計成一種放射體以便輻射由半導體 晶Η (1)發射及/或接收之光線；晶Η載體（2)至少有 兩個由封裝（3)上之許多點凸出之外部連接區（π)。 2. —種光電半導藶紐件，其偽以表面安裝元件（SMD)之 方式構成且可發射及/或接收輻射，其中發射及/或 接收輻射之半導體晶Η (1)傜固定在導線架之晶Κ載 體（2)上，導線架是由晶Κ載體（2)和連接件⑽所構成 ，連接件⑽則配置於距晶Η載體（2)某一距離處,半 導體晶片（1)及至少晶Η載體（2)之部份區域以及連接 件（Ρ的一部份偽由封装（3)所圍繞其特徵為：晶Η 載體（2 )在半導體晶Η (1)所固定之區域中形成一槽（4 ) ，該槽（4 )之内表面（5 )設計成一種反射體以便輻射由 -1 - 本紙張尺度逍用中國國家棵準（CNS ) Α4规格（210ΧΜ7公釐） (請先閲讀背面之注意事項再填寫本貰)
    經濟部中央揉率局員工消费合作社印— A8 B8 C8 D8六、申請專利範圍 半導體晶Μ (1)發射及/或接收之光線；晶Η載體（2) 之槽（4)至少有一部份由封裝（3)凸出，使晶Μ載疆（2) 可電性及/或熱學上連接在槽（4)之區域中。 3. 如申請專利範圍第1或第2項之半導體组件，其中導 综架包含晶Η載體（2)和配置於晶Κ載體（2)某一距離 處之連接件（10),具有兩個由封裝（3)之相對邊凸出 之外部連接區（12)。 4. 如申請專利範圍第1或第2項之半導體組件，其中至 少某些晶片載體（2 )之槽（4 )的内表面（5 )以增強反射 之材料來塗佈。 5 .如申請專利範圍第3項之半導體組件，其中晶Η載體 (2 )之外部連接區（11)較連接件（1 0 )之外部連接區（1 2 ) 還寬。 6. 如申請專利範圍第1或第2項之半導體组件，其中封 裝（1 3 )完全由輻射可透過之材料组成。 7. 如申請專利範圍第5項之半導體組件，其中封裝（13) 完全由輻射可透過之材料组成。 8. 如申請專利範圍第1或第2項之半導體組件，其中封 裝（3)有一輻射不可滲透之基體（7),基體（7)有一凹 口（8)和一配置在Η 口（8)中之射可透過的窗口（9), 且輻射不可透過之基體（7)至少封裝晶片載體（2)之一 部份區域使得至少晶Κ載體（2 )之槽（4 )配置在凹口 -2 - (請先聞讀背面之注意事項再填寫本頁) ^eJ m··— mjl —tfl·—— 4HH_« 11-i -l-二- m I: - - « 本紙浪尺度適用中國國家樣準（CNS ) A4规格（210 X 297公釐） C8 D8 六、申請專利範圍 (8)中。 9.如申請專利範圍第5項之半導體組件，其中封裝（3) 有一輻射不可滲透之基體（7),基β (7)有一凹口（8) 和一配置在凹口（8)中之輻射可透過的窗口（9)，且輻 射不可透過之基體（7)至少封裝晶Η載體（2)之一部份 區域使得至少晶Κ載體（2)之槽（4)配置在凹口（8) 中。 10, 如申請專利範圍第S項之半導體組件，其中槽（4)之 上邊緣（14)在凹口（8)之上邊緣（15)之下方延伸，且 未被槽（4)覆蓋之凹口的内表面（13)之部份區域需設 計成形成一反射體以輻射由半専鱧晶Η (1)所發射之 光線D 11. 如申請專利範圍第10項之半導體組件，其中至少凹口 (8)之某些内表面（13)以增強反射之材料塗佈。 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央梂牟局員工消費合作社印裝 本紙诙尺Α適用中國國家揉準（CNS ) Μ规格（210X297公釐）
TW085111461A 1995-09-29 1996-09-19 TW315528B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19536454A DE19536454B4 (de) 1995-09-29 1995-09-29 Optoelektronisches Halbleiter-Bauelement

Publications (1)

Publication Number Publication Date
TW315528B true TW315528B (zh) 1997-09-11

Family

ID=7773661

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085111461A TW315528B (zh) 1995-09-29 1996-09-19

Country Status (6)

Country Link
US (4) US6459130B1 (zh)
EP (2) EP0852816B1 (zh)
DE (2) DE19549818B4 (zh)
MY (1) MY115210A (zh)
TW (1) TW315528B (zh)
WO (1) WO1997012386A2 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7009285B2 (en) 2004-03-19 2006-03-07 Lite-On Technology Corporation Optoelectronic semiconductor component
US7053414B2 (en) 2004-04-12 2006-05-30 Lite-On Technology Corporation Optical semiconductor component to prevent electric leakage and provide different driving voltages
CN105580149A (zh) * 2013-09-19 2016-05-11 欧司朗光电半导体有限公司 光电子发光组件和导体框复合件
CN106353889A (zh) * 2015-07-24 2017-01-25 高准精密工业股份有限公司 光学装置

Families Citing this family (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0646971B1 (de) 1993-09-30 1997-03-12 Siemens Aktiengesellschaft Zweipoliges SMT-Miniatur-Gehäuse für Halbleiterbauelemente und Verfahren zu dessen Herstellung
DE19549818B4 (de) * 1995-09-29 2010-03-18 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiter-Bauelement
GB2381381B (en) * 1997-11-19 2003-06-11 Unisplay Sa LED lamp
US6633120B2 (en) 1998-11-19 2003-10-14 Unisplay S.A. LED lamps
JPH11224960A (ja) * 1997-11-19 1999-08-17 Unisplay Sa Ｌｅｄランプ並びにｌｅｄチップ
US8587020B2 (en) 1997-11-19 2013-11-19 Epistar Corporation LED lamps
US20030102527A1 (en) * 1997-12-31 2003-06-05 Bily Wang Method of fabricating light emitting diode package
DE19829197C2 (de) * 1998-06-30 2002-06-20 Siemens Ag Strahlungsaussendendes und/oder -empfangendes Bauelement
JP2000183407A (ja) 1998-12-16 2000-06-30 Rohm Co Ltd 光半導体装置
US6683325B2 (en) * 1999-01-26 2004-01-27 Patent-Treuhand-Gesellschaft-für Elektrische Glühlampen mbH Thermal expansion compensated opto-electronic semiconductor element, particularly ultraviolet (UV) light emitting diode, and method of its manufacture
DE19947044B9 (de) * 1999-09-30 2007-09-13 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Bauelement mit Reflektor und Verfahren zur Herstellung desselben
DE10020465A1 (de) 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement
US7320632B2 (en) 2000-06-15 2008-01-22 Lednium Pty Limited Method of producing a lamp
JP4926337B2 (ja) * 2000-06-28 2012-05-09 アバゴ・テクノロジーズ・ジェネラル・アイピー（シンガポール）プライベート・リミテッド 光源
DE10117889A1 (de) * 2001-04-10 2002-10-24 Osram Opto Semiconductors Gmbh Leiterrahmen und Gehäuse für ein strahlungsemittierendes Bauelement, strahlungsemittierendes Bauelement sowie Verfahren zu dessen Herstellung
JP3659635B2 (ja) * 2001-04-10 2005-06-15 株式会社東芝 光半導体装置
JP3753011B2 (ja) * 2001-04-11 2006-03-08 豊田合成株式会社 反射型発光ダイオード
JP2003084066A (ja) * 2001-04-11 2003-03-19 Nippon Kessho Kogaku Kk 放射線検出器用部品、放射線検出器および放射線検出装置
US6949771B2 (en) * 2001-04-25 2005-09-27 Agilent Technologies, Inc. Light source
US20020163001A1 (en) * 2001-05-04 2002-11-07 Shaddock David Mulford Surface mount light emitting device package and fabrication method
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
JP3891400B2 (ja) * 2001-07-25 2007-03-14 シチズン電子株式会社 発光ダイオード
US6949395B2 (en) * 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
JP2003158301A (ja) * 2001-11-22 2003-05-30 Citizen Electronics Co Ltd 発光ダイオード
CN1663044A (zh) * 2002-06-14 2005-08-31 莱尼股份有限公司 灯和制灯方法
US7429757B2 (en) * 2002-06-19 2008-09-30 Sanken Electric Co., Ltd. Semiconductor light emitting device capable of increasing its brightness
DE10229067B4 (de) * 2002-06-28 2007-08-16 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
CN100595937C (zh) * 2002-08-01 2010-03-24 日亚化学工业株式会社 半导体发光元件及发光装置
TW561636B (en) * 2002-10-11 2003-11-11 Highlink Technology Corp Optoelectronic device
JP2004265977A (ja) * 2003-02-28 2004-09-24 Noritsu Koki Co Ltd 発光ダイオード光源ユニット
EP1597764A1 (de) * 2003-02-28 2005-11-23 Osram Opto Semiconductors GmbH Optoelektronisches bauteil mit strukturiert metallisiertem gehäusekörper, verfahren zur herstellung eines derartigen bauteils und verfahren zur strukturierten metallisierung eines kunststoff enthaltenden körpers
US7718451B2 (en) * 2003-02-28 2010-05-18 Osram Opto Semiconductor Gmbh Method for producing an optoelectronic device with patterned-metallized package body and method for the patterned metalization of a plastic-containing body
TWI257181B (en) * 2003-07-28 2006-06-21 Rohm Co Ltd Semiconductor module
US6995402B2 (en) * 2003-10-03 2006-02-07 Lumileds Lighting, U.S., Llc Integrated reflector cup for a light emitting device mount
JP4170950B2 (ja) * 2003-10-10 2008-10-22 松下電器産業株式会社 光学デバイスおよびその製造方法
JP2005197329A (ja) * 2004-01-05 2005-07-21 Stanley Electric Co Ltd 表面実装型半導体装置及びそのリードフレーム構造
DE102004003929B8 (de) * 2004-01-26 2016-03-10 Dominant Opto Technologies Sdn Bhd Mit SM-Technologie bestückbares optoelektronisches Bauelement
US20050167796A1 (en) * 2004-01-29 2005-08-04 Tay Kheng C. Miniaturised surface mount optoelectronic component
JP2005217337A (ja) * 2004-02-02 2005-08-11 Matsushita Electric Ind Co Ltd 光学デバイス
DE102004014207A1 (de) * 2004-03-23 2005-10-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil mit mehrteiligem Gehäusekörper
WO2005098971A1 (fr) * 2004-04-08 2005-10-20 Yu-Chao Wu Dispositif a diode electroluminescente, dispositif de dispersion de chaleur a diode electroluminescente et appareil d'eclairage comprenant le dispositif precite
JP4412051B2 (ja) * 2004-05-10 2010-02-10 パナソニック株式会社 電子部品装着装置および電子部品装着方法
EP1751806B1 (de) * 2004-05-31 2019-09-11 OSRAM Opto Semiconductors GmbH Optoelektronisches halbleiterbauelement und gehäuse-grundkörper für ein derartiges bauelement
DE102004039693B4 (de) * 2004-08-16 2009-06-10 Infineon Technologies Ag Vergussmasse, Chipmodul und Verfahren zur Herstellung eines Chipmoduls
JP2006093672A (ja) * 2004-08-26 2006-04-06 Toshiba Corp 半導体発光装置
WO2006030671A1 (ja) * 2004-09-16 2006-03-23 Hitachi Aic Inc. Ｌｅｄ用反射板およびｌｅｄ装置
US20060086940A1 (en) * 2004-10-26 2006-04-27 Jim Wang Package structure of multi-chips light-emitting module
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
US7821023B2 (en) * 2005-01-10 2010-10-26 Cree, Inc. Solid state lighting component
US9793247B2 (en) 2005-01-10 2017-10-17 Cree, Inc. Solid state lighting component
US8669572B2 (en) * 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
DE102005041064B4 (de) * 2005-08-30 2023-01-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zu dessen Herstellung
TWI302041B (en) * 2006-01-19 2008-10-11 Everlight Electronics Co Ltd Light emitting diode packaging structure
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
CN100573935C (zh) * 2006-01-25 2009-12-23 亿光电子工业股份有限公司 Led封装结构及其制造方法
KR100819883B1 (ko) * 2006-02-17 2008-04-07 삼성전자주식회사 발광소자 패키지 및 그 제조방법
DE102006008793A1 (de) * 2006-02-24 2007-09-13 Osram Opto Semiconductors Gmbh Elektronisches Bauteil
US7675145B2 (en) 2006-03-28 2010-03-09 Cree Hong Kong Limited Apparatus, system and method for use in mounting electronic elements
JP5091421B2 (ja) * 2006-04-07 2012-12-05 株式会社東芝 半導体発光装置
US8748915B2 (en) 2006-04-24 2014-06-10 Cree Hong Kong Limited Emitter package with angled or vertical LED
US7635915B2 (en) * 2006-04-26 2009-12-22 Cree Hong Kong Limited Apparatus and method for use in mounting electronic elements
JP3914954B1 (ja) * 2006-05-24 2007-05-16 株式会社エレメント電子 発光装置およびその製造方法
US8735920B2 (en) * 2006-07-31 2014-05-27 Cree, Inc. Light emitting diode package with optical element
US8367945B2 (en) * 2006-08-16 2013-02-05 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
KR101266490B1 (ko) 2006-09-08 2013-05-23 삼성디스플레이 주식회사 백라이트 어셈블리 및 이를 포함하는 액정 표시 장치
KR100757826B1 (ko) * 2006-09-29 2007-09-11 서울반도체 주식회사 측면 발광 다이오드 패키지
US9711703B2 (en) 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
JP2007184643A (ja) * 2007-03-28 2007-07-19 Toshiba Electronic Engineering Corp 光半導体パッケージ
JP2007184642A (ja) * 2007-03-28 2007-07-19 Toshiba Electronic Engineering Corp 光半導体パッケージ
KR100801621B1 (ko) * 2007-06-05 2008-02-11 서울반도체 주식회사 Ｌｅｄ 패키지
US8866169B2 (en) 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
USD615504S1 (en) 2007-10-31 2010-05-11 Cree, Inc. Emitter package
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US9135837B2 (en) * 2007-11-16 2015-09-15 Intellectual Discovery Co., Ltd. Illumination assembly having multiple reflective cavities each with a single emitter
US7524087B1 (en) * 2007-11-16 2009-04-28 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Optical device
USD633631S1 (en) 2007-12-14 2011-03-01 Cree Hong Kong Limited Light source of light emitting diode
USD634863S1 (en) 2008-01-10 2011-03-22 Cree Hong Kong Limited Light source of light emitting diode
TW200939869A (en) * 2008-03-05 2009-09-16 Harvatek Corp An LED chip package structure with a high-efficiency heat-dissipating substrate and packaging method thereof
US8049230B2 (en) * 2008-05-16 2011-11-01 Cree Huizhou Opto Limited Apparatus and system for miniature surface mount devices
JP5464825B2 (ja) * 2008-07-23 2014-04-09 ローム株式会社 Ｌｅｄモジュール
DE102008038748B4 (de) * 2008-08-12 2022-08-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenmontierbares, optoelektronisches Halbleiterbauteil
US20100096658A1 (en) * 2008-10-20 2010-04-22 Wu Ming-Chang Structure of Light Emitting Diode
US8791471B2 (en) 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
KR101007131B1 (ko) * 2008-11-25 2011-01-10 엘지이노텍 주식회사 발광 소자 패키지
US8368112B2 (en) * 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
JP5340763B2 (ja) * 2009-02-25 2013-11-13 ローム株式会社 Ｌｅｄランプ
KR101615410B1 (ko) * 2009-06-22 2016-04-25 니치아 카가쿠 고교 가부시키가이샤 발광 장치
US8415692B2 (en) * 2009-07-06 2013-04-09 Cree, Inc. LED packages with scattering particle regions
US8598809B2 (en) 2009-08-19 2013-12-03 Cree, Inc. White light color changing solid state lighting and methods
US8101962B2 (en) * 2009-10-06 2012-01-24 Kuang Hong Precision Co., Ltd. Carrying structure of semiconductor
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
KR101859149B1 (ko) 2011-04-14 2018-05-17 엘지이노텍 주식회사 발광 소자 패키지
KR101103674B1 (ko) 2010-06-01 2012-01-11 엘지이노텍 주식회사 발광 소자
DE102010023815A1 (de) * 2010-06-15 2011-12-15 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelements
JP5667820B2 (ja) * 2010-09-14 2015-02-12 東芝電子エンジニアリング株式会社 光半導体装置
KR101852388B1 (ko) * 2011-04-28 2018-04-26 엘지이노텍 주식회사 발광 소자 패키지
CN102201476B (zh) * 2011-05-13 2013-12-04 王杏华 太阳能电池
US8564004B2 (en) 2011-11-29 2013-10-22 Cree, Inc. Complex primary optics with intermediate elements
JP5740458B2 (ja) * 2013-12-02 2015-06-24 東芝電子エンジニアリング株式会社 光半導体パッケージ
WO2016124249A1 (en) * 2015-02-06 2016-08-11 Osram Opto Semiconductors Gmbh Leadframe and chip package comprising a leadframe
US10705213B2 (en) 2015-07-24 2020-07-07 Everready Precision Ind. Corp. Optical apparatus
TWI656355B (zh) * 2015-07-24 2019-04-11 高準精密工業股份有限公司 光學裝置
CN106571383B (zh) 2015-10-08 2020-04-28 联华电子股份有限公司 半导体元件及其制作方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3820237A (en) * 1971-05-17 1974-06-28 Northern Electric Co Process for packaging light emitting devices
US3821775A (en) * 1971-09-23 1974-06-28 Spectronics Inc Edge emission gaas light emitter structure
US3914786A (en) * 1974-04-19 1975-10-21 Hewlett Packard Co In-line reflective lead-pair for light-emitting diodes
US4255688A (en) * 1977-12-15 1981-03-10 Tokyo Shibaura Denki Kabushiki Kaisha Light emitter mounted on reflector formed on end of lead
DE3129996A1 (de) * 1981-07-29 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Optokoppler
JPS5896785A (ja) * 1981-12-04 1983-06-08 Stanley Electric Co Ltd 発光ダイオ−ドの合成樹脂レンズ成形方法
DE3148843C2 (de) * 1981-12-10 1986-01-02 Telefunken electronic GmbH, 7100 Heilbronn Mehrfach-Leuchtdiodenanordnung
US4611884A (en) * 1982-11-24 1986-09-16 Magnetic Controls Company Bi-directional optical fiber coupler
JPS60261181A (ja) * 1984-06-07 1985-12-24 Toshiba Corp 光半導体装置
US4649415A (en) * 1985-01-15 1987-03-10 National Semiconductor Corporation Semiconductor package with tape mounted die
US4935665A (en) * 1987-12-24 1990-06-19 Mitsubishi Cable Industries Ltd. Light emitting diode lamp
EP1187227A3 (de) * 1989-05-31 2002-08-28 Osram Opto Semiconductors GmbH & Co. OHG Oberflächenmontierbares Opto-Bauelement und Verfahren zum Herstellen desselben
US4995695A (en) * 1989-08-17 1991-02-26 At&T Bell Laboratories Optical assembly comprising optical fiber coupling means
KR950011927B1 (ko) 1989-12-07 1995-10-12 가부시끼가이샤 도시바 감광성 조성물 및 수지봉지형 반도체장치
US5158091A (en) * 1990-11-30 1992-10-27 Ivac Corporation Tonometry system for determining blood pressure
US5291038A (en) * 1990-12-19 1994-03-01 Sharp Kabushiki Kaisha Reflective type photointerrupter
US5221641A (en) 1991-06-21 1993-06-22 Rohm Co., Ltd. Process for making light emitting diodes
DE4242842C2 (de) * 1992-02-14 1999-11-04 Sharp Kk Lichtemittierendes Bauelement zur Oberflächenmontage und Verfahren zu dessen Herstellung
DE4232644A1 (de) * 1992-09-29 1994-03-31 Siemens Ag Optoelektronisches Halbleiterbauelement
DE4232637C2 (de) * 1992-09-29 2002-10-31 Osram Opto Semiconductors Gmbh Lumineszenzdiode mit Reflektor, der einen abgestimmtem Elastizitätsmodul besitzt
KR100373801B1 (ko) * 1994-07-29 2003-05-09 산요 덴키 가부시키가이샤 반도체레이저장치및이를이용한광픽업장치
JP3640097B2 (ja) * 1994-12-14 2005-04-20 セイコーエプソン株式会社 光センシング装置
US5545893A (en) * 1994-12-23 1996-08-13 Motorola, Inc. Optocoupler package and method for making
DE19549818B4 (de) * 1995-09-29 2010-03-18 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiter-Bauelement
GB9610621D0 (en) * 1996-05-21 1996-07-31 Hewlett Packard Co Optical isolator
JP3751083B2 (ja) * 1996-08-27 2006-03-01 同和鉱業株式会社 光通信用ランプ装置
KR19980064178A (ko) * 1996-12-18 1998-10-07 윌리엄비.켐플러 반도체 칩을 3차원적 리드프레임에 접속시키기 위한 시스템, 장치, 및 방법
DE19746893B4 (de) * 1997-10-23 2005-09-01 Siemens Ag Optoelektronisches Bauelement mit Wärmesenke im Sockelteil und Verfahren zur Herstellung
US6226082B1 (en) * 1998-06-25 2001-05-01 Amira Medical Method and apparatus for the quantitative analysis of a liquid sample with surface enhanced spectroscopy
DE19829197C2 (de) * 1998-06-30 2002-06-20 Siemens Ag Strahlungsaussendendes und/oder -empfangendes Bauelement
JP3385238B2 (ja) * 1999-01-12 2003-03-10 シャープ株式会社 光送受信モジュール

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7009285B2 (en) 2004-03-19 2006-03-07 Lite-On Technology Corporation Optoelectronic semiconductor component
US7053414B2 (en) 2004-04-12 2006-05-30 Lite-On Technology Corporation Optical semiconductor component to prevent electric leakage and provide different driving voltages
CN105580149A (zh) * 2013-09-19 2016-05-11 欧司朗光电半导体有限公司 光电子发光组件和导体框复合件
CN105580149B (zh) * 2013-09-19 2018-07-13 欧司朗光电半导体有限公司 光电子发光组件和导体框复合件
CN106353889A (zh) * 2015-07-24 2017-01-25 高准精密工业股份有限公司 光学装置

Also Published As

Publication number Publication date
US6459130B1 (en) 2002-10-01
WO1997012386A2 (de) 1997-04-03
US20050116238A1 (en) 2005-06-02
US20030155624A1 (en) 2003-08-21
DE19549818B4 (de) 2010-03-18
DE59609374D1 (de) 2002-07-25
EP0852816B1 (de) 2002-06-19
EP1199753A2 (de) 2002-04-24
US6975011B2 (en) 2005-12-13
US6927469B2 (en) 2005-08-09
MY115210A (en) 2003-04-30
US7199454B2 (en) 2007-04-03
US20040188790A1 (en) 2004-09-30
EP1199753A3 (de) 2003-01-02
EP0852816A2 (de) 1998-07-15
WO1997012386A3 (de) 1997-05-09

Similar Documents

Publication Publication Date Title
TW315528B (zh)
TW575966B (en) LED light-source with a lens
KR100463653B1 (ko) 발광 다이오드
EP2515353B1 (en) Light emitting diode package
TWI550897B (zh) 功率式表面安裝之發光晶粒封裝
US6833566B2 (en) Light emitting diode with heat sink
US7264378B2 (en) Power surface mount light emitting die package
TWI565106B (zh) 光電半導體裝置
US8167463B2 (en) Power surface mount light emitting die package
TW525278B (en) Package structure of high-efficiency electro-optical device and the forming method thereof
US20060060867A1 (en) Light emitting device
US20080315227A1 (en) Light-Emitting Diode Arrangement
JP6575507B2 (ja) 発光装置および集積型発光装置
KR20120094280A (ko) 발광소자 패키지 및 그 제조방법
JP2001077430A (ja) 発光ダイオード
JP2001036150A (ja) 発光ダイオード
TWI472067B (zh) 光學封裝及其製造方法
CN112397627B (zh) 发光装置
TWI237408B (en) Light emitting diode (LED) packaging
JP3915196B2 (ja) 半導体発光装置
CN114335290A (zh) 封装结构
TW201214784A (en) Optoelectric device package structure
TW201533928A (zh) 發光二極體封裝體及其製造方法
JP7212241B2 (ja) 発光装置
JP2013187269A (ja) 光半導体装置及びその製造方法

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent