WO2005098971A1 - Dispositif a diode electroluminescente, dispositif de dispersion de chaleur a diode electroluminescente et appareil d'eclairage comprenant le dispositif precite - Google Patents
Dispositif a diode electroluminescente, dispositif de dispersion de chaleur a diode electroluminescente et appareil d'eclairage comprenant le dispositif precite Download PDFInfo
- Publication number
- WO2005098971A1 WO2005098971A1 PCT/CN2005/000460 CN2005000460W WO2005098971A1 WO 2005098971 A1 WO2005098971 A1 WO 2005098971A1 CN 2005000460 W CN2005000460 W CN 2005000460W WO 2005098971 A1 WO2005098971 A1 WO 2005098971A1
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- Prior art keywords
- emitting diode
- light emitting
- heat
- light
- heat sink
- Prior art date
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- 239000012809 cooling fluid Substances 0.000 claims abstract description 3
- 230000017525 heat dissipation Effects 0.000 claims description 102
- 239000000758 substrate Substances 0.000 claims description 58
- 239000000110 cooling liquid Substances 0.000 claims description 55
- 239000004020 conductor Substances 0.000 claims description 33
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 11
- 239000002470 thermal conductor Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 239000002826 coolant Substances 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 3
- 238000004512 die casting Methods 0.000 claims description 2
- 238000004663 powder metallurgy Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 238000001746 injection moulding Methods 0.000 claims 2
- 238000005266 casting Methods 0.000 claims 1
- 238000003754 machining Methods 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000007788 liquid Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000005022 packaging material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000003339 best practice Methods 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 230000003137 locomotive effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- Light emitting diode device light emitting diode heat sink, and lighting device including the same
- the present invention relates to a light emitting diode device, and more particularly, to a light emitting diode device having a heat dissipation structure.
- Light Emitting Diode (LED for short) has the advantages of high brightness, small size, light weight, not easy to break, low power consumption and long life. Therefore, it is widely used in various display products.
- the light emitting principle is as follows : Applying a voltage to the diode drives the electrons in the diode to combine with the holes and further generates light.
- a general commercial light-emitting diode 10 please refer to FIG. 1, which has a light-emitting diode chip 11 placed on a lead frame 14, and the light-emitting diode chip 11 is electrically connected to the lead frame 14 by a lead 12.
- the light-emitting diode 10 further includes a packaging material 13 covering the light-emitting diode chip 11 and the lead frame 14 and exposing pins 15 for protecting the light-emitting diode chip 11 and the lead 12.
- the light emitting diode is called a cold light source, since the wafer emits some energy while converting into heat, the temperature of the central light emitting layer can reach about 400 degrees.
- the packaging material used to package the diode is usually a resin compound with a thermal insulation effect, and its thermal conductivity is not good. Therefore, the heat cannot be conducted upward by the epoxy resin and dissipated to the air. It can only be conducted slowly by the wire. .
- the packaging material 13 covering the light emitting diode 10 When the heat accumulation in the light emitting diode 10 is too high, it is easy for the packaging material 13 covering the light emitting diode 10 to have different degrees of expansion due to different heat, resulting in the lead frame 14 and the packaging material. There is a gap between 13 and it is easy for air or moisture to infiltrate and affect the use and shorten the life. In severe cases, the solder joints or wires 12 may fall off.
- a light emitting diode device array 50 is shown, which is a further application of the light emitting diode.
- the light emitting diode device array 50 includes a plurality of light emitting diodes 10 adhered to a substrate 60 in the form of a high-density array. Because its heat source is more concentrated, the above-mentioned phenomenon of deterioration of the LED grains due to heat is caused in the light emitting diode device array 50 More obvious.
- the most successful example is the Luxeon® light emitting diode 100 from the American company LumiLeds. Please refer to FIG. 3, which specifically uses a large-area metal base 110 and uses an aluminum substrate 130 as a heat sink to generate the wafer 120.
- the heat transmitted to the air requires only 18 pieces which can be equivalent to the brightness of 100 traditional LEDs.
- the operating current of the light-emitting diode 100 is limited to about 20 mA at an appropriate operating temperature, and has not been widely adopted due to the high production cost.
- an object of the present invention is to provide a light emitting diode device with a heat dissipation structure, which includes a heat conductor, and the heat conductor is a heat dissipation column or a heat dissipation base.
- a heat conductor is a heat dissipation column or a heat dissipation base.
- one end of the heat conductor is used as a bearing seat of the LED chip, and the other end of the heat conductor is directly extended to a heat dissipation body, and the heat dissipation body is a high-efficiency cooling cavity.
- the heat generated when the light emitting diode die emits light can be quickly transferred to the outside of the light emitting diode die through the heat conductor and the heat dissipation body. In this way, even if the light emitting diode is further improved Operating current to improve the brightness, the LED light emitting grains can still be pushed at a suitable operating temperature, which effectively prevents the phenomenon of grain degradation.
- Another object of the present invention is to provide a light emitting diode heat dissipation device, which combines one or more light emitting diode devices and one or more cooling liquid supply devices to form a liquid-cooled circulating heat dissipation device, which can more effectively improve light emitting diodes.
- the problem of heat dissipation is to provide a light emitting diode heat dissipation device, which combines one or more light emitting diode devices and one or more cooling liquid supply devices to form a liquid-cooled circulating heat dissipation device, which can more effectively improve light emitting diodes.
- Another object of the present invention is to provide a lighting device with high light emitting efficiency, wherein the lighting device includes the light emitting diode device with a heat dissipation structure according to the present invention.
- a light emitting diode device with a heat dissipation structure includes: a heat dissipation body having an open end; a substrate disposed on the heat dissipation body and having a first surface and A second surface, wherein the second surface is located on the opposite side of the first surface and abuts the open end of the heat dissipation body, and a first cavity is formed between the second surface and the heat dissipation body; at least one The heat conductor is disposed on the substrate in a manner penetrating the substrate, and the heat conductor has an extension portion and a bearing portion, wherein the extension portion is located in the first cavity; and at least one light emitting diode die is disposed on the substrate.
- the heat-carrying body is on a bearing portion.
- the light emitting diode device having a heat dissipation structure is It can also cover the tongue: a heat-dissipating body with an opening; a bearing seat disposed on the heat-dissipating body, having a first surface and a second surface, wherein the second surface is located on the opposite side of the first surface And the abutment is in contact with the opening of the heat dissipation body, and an empty space is formed between the second surface and the heat dissipation body; at least one light emitting diode die is disposed on the first surface of the bearing base, and a cooling: filling In the cavity.
- the present invention provides a light emitting diode heat dissipating device.
- the light emitting diode dissipating device includes: one or more cooling liquid supply devices; and one or more light emitting diode devices having a heat dissipating structure having the heat dissipating structure.
- the light emitting diode device is in communication with the cooling liquid supply device.
- the light-emitting diode devices having a heat-dissipating structure each include: a heat-dissipating body having an open end and communicating with the cooling liquid supply device; a substrate disposed on the heat-dissipating body having a first surface and a second A surface, wherein the second surface is located on the opposite side of the first surface and abuts the open end of the heat sink body, and a first cavity is formed between the second surface and the heat sink, wherein the cooling liquid is supplied
- the device supplies a cooling liquid into the first cavity; at least one heat conductor is disposed on the substrate in a manner penetrating the substrate, and the conductor has an extension portion and a bearing portion, wherein the extension portion is located in the The first cavity; and at least one light emitting diode die are disposed on the bearing portion of the thermal conductor.
- the light-emitting diode device having a heat-dissipating structure wherein the plurality of light-emitting diode devices having a heat-dissipating structure utilize at least one circulation pipeline and the cooling coil supply device (various types of water tanks, buckets, water tanks, and steam) , Locomotive cooling water tank).
- the cooling liquid supply is arranged as a cooling liquid tank containing a pressure pump or an injection type cooling liquid tank, and can also be a closed type self-circulation without external power caused by pressurized kinetic energy caused only by heat energy absorbed by the cooling liquid. system.
- the present invention provides a lighting device.
- the lighting device includes: a control unit; and at least one light emitting diode device having a heat dissipation structure, which is electrically connected to the control unit.
- the light emitting diode device with a heat dissipation structure includes: a heat dissipation body having an open end; a substrate disposed on the heat dissipation body, having a first surface and a second surface, wherein the second surface is located at On the opposite side of the first surface, JL is in abutment with the open end of the heat dissipation body, and a first cavity is formed between the second surface and the heat dissipation body; at least one heat conductor is disposed in a manner penetrating the substrate.
- the heating body has an extending portion and a supporting portion, wherein the extending portion is located in the first cavity; and at least one light emitting diode die is arranged on the supporting portion of the thermal conductor, wherein the The control unit turns on or off the LED chip.
- the present invention provides a light emitting diode heat sink, including: a cooling liquid tank; and at least one light emitting diode device in communication with the cooling liquid tank; wherein the light emitting diode device includes: a heat sink The body has an opening; a bearing seat is disposed on the heat dissipating body and has a first surface and a second surface, wherein the second surface is located on the opposite side of the first surface and is in contact with the opening of the heat dissipating body; Then, a cavity is formed between the second watch and the heat-dissipating body; at least one light emitting diode die is disposed on the first surface of the socket; and a cooling is filled in the cavity.
- the light emitting diode device with a heat dissipation structure according to the present invention may further include a cooling liquid filled in the cavity.
- at least a part of the extension of the heat conductor may be in contact with the cooling liquid.
- the light emitting diode device with a heat dissipation structure according to the present invention may further include a lens formed on the first surface, wherein the lens and the first surface form a second cavity, and The second cavity includes at least one LED chip.
- the light-emitting diode device with a heat-dissipating structure according to the present invention further includes a predetermined printing, high-thickness, high-conductivity pattern coated with pure silver or pure copper, formed on the first surface of the substrate and emitting light.
- the diode is electrically connected.
- FIG. 1 is a schematic cross-sectional structure diagram of a conventional light emitting diode device.
- FIG. 2 is a view showing a conventional light emitting diode device array.
- FIG. 3 is a schematic cross-sectional structure diagram of a conventional light emitting diode device with a heat dissipation structure.
- 4a to 41 are schematic cross-sectional structural diagrams of a light emitting diode device according to the preferred embodiment of the present invention.
- 5a to 5h are schematic diagrams showing the relative relationship between the heat dissipation column and the substrate of the light emitting diode device according to the present invention. Sectional view.
- FIGS. 6a to 6y are cross-sectional views of the heat dissipation body with a geometric shape described in FIGS. 6a to 6y.
- FIG. 8 is a three-dimensional assembly view of the array-type light-emitting diode device according to the first embodiment of the present invention.
- FIG. 9a and FIG. 9b illustrate the steps of fixing the LED chip on the bearing surface of the heat dissipation column according to Embodiment 1 of the present invention.
- FIG. 10 is a three-dimensional assembly diagram of the array J type LED device according to the second embodiment of the present invention.
- Fig. 11a shows a block diagram of a light emitting diode heat sink according to a preferred embodiment of the present invention.
- Figure lib shows a perspective view of a light emitting diode heat sink according to a preferred embodiment of the present invention.
- FIG. 12 is a block diagram of a display device according to a preferred embodiment of the present invention.
- FIG. 13 is a schematic diagram of a display device according to a preferred embodiment of the present invention.
- FIG. 14 is a schematic perspective view of a vehicle light system according to a preferred embodiment of the present invention.
- 15 to 18 are cross-sectional structural diagrams of the light emitting diode device according to the preferred embodiment of the present invention.
- 19 and 20 are block diagrams of a light emitting diode heat sink according to a preferred embodiment of the present invention. Best Practice:
- the invention discloses a light-emitting diode device with a heat-dissipating structure, which has excellent heat-dissipating ability, which can avoid the light-emitting effect caused by the poor heat conduction efficiency of the conventional light-emitting diode device.
- the rate is too low ⁇ photodiode grain degradation and other problems.
- the light emitting diode device 200 includes a light emitting diode die 210, a plurality of heat conductors 220, a base plate 230, a heat dissipation body 240, and an optical lens 250.
- the heat-conducting body 220 is divided into a bearing portion 222 and an extension portion 224.
- the extending portion 224 is a portion of the thermal conductor 220 protruding downward from the second surface 233 of the substrate 230, please refer to FIG. 5a.
- the supporting portion 222 is used for placing the LED chip 210.
- the substrate 230 has a first surface 231 and a second surface 233, and the second surface 233 is located on the opposite side of the first surface 231.
- the substrate 230 further includes a through hole 234, and the through hole 234 penetrates from a first surface 231 of the substrate to the second surface 233.
- the guide body 220 passes through the substrate 230 through the through hole 234, and is disposed on the substrate 230 in a manner penetrating the substrate 230, with the extension portion 224 on the same side as the second surface 233 of the substrate.
- the light-emitting diode device 200 may have a single or multiple light-emitting diode dies 210.
- the heat conducting body 220 may be designed as a long heat conducting post (as shown in Figs. 4a to 4c), a ring-shaped conducting post (as shown in Figs. 4d to 4f), a metre-shaped conducting post (as shown in Figs. 4g to 4i), or A long thermally conductive post (as shown in Figures 4j to 41).
- the thermally conductive body 220 is a ring-shaped thermally conductive post, a m-shaped thermally conductive post, or a long-shaped thermally conductive post, the thermally conductive body 220 may have multiple light-emitting diode grains at the same time.
- 210 is arranged in a linear array (one-dimensional array) on a bearing surface 227 of the bearing portion 222.
- the substrate 230 is used to fix the heat conductor 220, and the first surface 231 of the substrate 230 may have a patterned circuit 236, and may be electrically connected to the LED chip 210 by using a wire as its Drive circuit.
- the substrate 230 abuts against the heat dissipation body 240 with a second surface 233, and the substrate 230 and the heat dissipation body 240 form a completely closed cavity 260, wherein the extension 224 of the heat conductor 220 is disposed in the cavity 260 .
- the cavity 260 may further include a fixed amount of the cooling liquid 280, the purpose of which is to accelerate the dissipation of the heat transferred from the diode die 210 to the heat conductor 220 more quickly.
- the load-bearing portion 222 and the extension portion 224 of the heat-conducting body 220 both have high heat-conducting capability, and can be made of the same or different heat-conducting materials, respectively, wherein the heat-conducting material It can be, for example, a metal such as silver, copper, aluminum or the like, or a ceramic composite material, a metal oxide, or a mixture thereof.
- the heat-dissipating body can be formed by medium pressure, die casting, powder metallurgy, injection, lathe processing or welding.
- the bearing portion 222 has a bearing surface 227 with an area of 0.5 to 2 mm 2.
- the bearing portion 222 may further include a reflective layer 228 formed thereon.
- the reflective layer may be, Metals such as silver, aluminum, silicon, copper, chromium, titanium, tungsten, or molybdenum, or alloys thereof.
- the invention does not limit the type of the light emitting diode die 210 used in the device, and it can be blue light, green light, red light, white light, or electroluminescent light emitting diode. Since the main heat dissipation route of the present invention is the heat conductor 220 instead of the substrate 230, there is no limitation on the type of the substrate 230 used in the present invention. It can be a printed circuit board, and the substrate can deposit a reflective layer.
- a layer of silver For example, a layer of silver.
- the heat sink is disposed on the substrate in a manner penetrating the substrate, and the relative relationship between the thermal conductor 20 and the substrate 230 is not limited, and can be adjusted as needed, please refer to FIGS. 5a to 5c and 5e. .
- the width of the extending portion 224 of the heat conducting body 220 may be greater than the width of the through hole, as shown in FIG. 5f and FIG. 5h.
- the carrier surface 227 may be a flat surface or a concave surface.
- the heat dissipating body 240 is, for example, a heat dissipating cup, and may further have a plurality of protrusions.
- the protruding portion may be formed inside or outside the heat dissipation body, wherein the material of the heat dissipation body 240 may be silver, copper, tungsten, nickel, silicon, aluminum, molybdenum, ceramic composite materials, diamond-like carbon materials, metal oxidation Or mixed.
- J may be a cylinder or a cube having an opening.
- the geometrical heat dissipation body 240 may further have various high heat dissipation geometry changes to highlight the phonons, free electrons, and air heat transfer energy of metallic materials, and the material may be silver or copper. , Aluminum, ceramic composites, metal oxides or their mixtures.
- the geometrical heat dissipation body according to the present invention may have a variety of variations, and may be preferably divided into four major types such as KI bucket type, tetrahedron bucket type, polyhedron bucket type, and oval bucket type ( Figures 6a to 6y).
- the heat dissipation body may have one or more retracted holes. Please refer to FIGS.
- FIGS. 7a to 7y are cross-sectional views corresponding to FIGS. 6a to 6y.
- the heat-dissipating body with a geometric shape according to the present invention can be enlarged, reduced, and changed in height due to the working environment and power requirements.
- the liquid level of the injected cooling liquid 280 in the rear cavity 260 is preferably in contact with the heat dissipation column 220 or various hot seats, and it is more preferable if it is in contact with the second surface 233 of the substrate 230.
- the applicable cooling liquid 280 may be water, organic solutions, liquid hydrocarbons, liquid helium, liquid; various nitrogen and other endothermic liquids, wherein the organic solution may be, for example, alcohols, alkanes, and ethers. Or ketones.
- Embodiment 1 is specifically described, and an array-type light-emitting diode device is taken as an example to describe the manufacturing method of the light-emitting diode device with a heat-dissipating structure according to the invention, and further measure the photoelectric properties of the light-emitting diode device in order to make the invention
- FIG. 8 an assembly diagram of an array type light emitting diode device 300 is shown.
- First b Take 20 cylindrical aluminum heat conductors 310, and a load-bearing surface 312 on each heat-dissipating column is fixed with a light-emitting diode die 320 (produced by Taiwan Guang Ga Company, model 514).
- the cylindrical radiating column has a length of 25 mm and a diameter of 1.5 mm.
- the diameter of the light-emitting diode die 320 is 14 mil.
- the driving power is 20 mA
- the light-emitting brightness is 40-50 mcd.
- the method of fixing the light emitting diode die 320 to the bearing surface 312 on the heat dissipation column includes the following steps: First, a plurality of trenches 313 having a length of about 3 to 6 mils and a width of about 0.1 to 2.0 mils are formed on the bearing surface 312. See Figure 9a. Next, an adhesive (or solder) is formed in the groove, and the LED chip 320 is fixed on the supporting surface 312 with the adhesive (or solder), as shown in FIG. 9b.
- Using the above steps to fix the light-emitting diode die 320 can not only increase the bonding strength of the die 320 and the bearing surface 312, but also maintain a good thermal conductivity effect.
- the printed circuit board has a thickness of 2 mm, and has 20 through holes 332 thereon, and each through hole has a diameter of 1.5 mm.
- the heat dissipation column passes through the substrate 330 through the through hole, and is disposed on the substrate 330 so as to penetrate the substrate 330.
- the supporting surface 312 of the thermal conductor 310 is approximately aligned with the top 334 of the substrate 330, and the remaining portion of the thermal conductor 310 exposes the bottom 336 of the substrate 330.
- the light emitting diode die is electrically connected with the circuit pattern by a gold wire.
- a heat-dissipating body 340 is provided, such as a square-shaped heat-dissipating bucket, which is made of copper, silver, or aluminum, and has an inner volume of 30 ml.
- a cooling liquid having a volume of 90 to 97% of the volume of the heat dissipating body is added to the heat dissipating body 340, and the heat dissipating body 340 is fixed to the bottom of the substrate 330, so that the exposed portion of the heat conductor 310 is completely covered by the heat dissipating body. Covered by the heat dissipation body 340.
- a projection-type optical lens 360 is provided on the top 334 of the substrate 330 to cover the light emission.
- a diode die 320 wherein the optical lens 360 maintains a specific distance from the light emitting diode die, and the specific distance is not less than 0.5 mm. So far, the array type light emitting diode device 300 according to the present invention is completed.
- the array-type light-emitting diode device obtained from 20 crystal grains in the first embodiment will be illuminated with different operating voltages and currents, respectively. After eight hours, the brightness and the operating temperature of the crystal grains were measured. The results are shown in Table 1.
- the operating temperature of the LED chip is still within the normal operating temperature range (80 ° C) of the LED, and it can be seen that the LED device with a heat dissipation structure according to the present invention has an advantageous heat dissipation mechanism and can quickly Heat is transferred out of the diode die.
- Example 2 Performed in the same manner as in Example 1, but replacing the 20 cylindrical aluminum heat conductors 310 with 3 ring-shaped heat conductors (length 25mm to 85mm, diameters 0.5mm, 1.0mm and 1.5mm, The thickness of the ring sheet is 0.1 mm to 0.5 mm), and the bearing surfaces 312 of each of the ring-shaped heat conductors are respectively fixed with 3, 7 and 10 light-emitting diode chips 320.
- the square heat sink is replaced with a round heat sink, as shown in FIG. 10.
- the invention also relates to a light-emitting diode heat dissipation device, according to the second law of thermodynamics: the one-way flow rule that heat never automatically flows from a cold object to a hot object, and the basic idea of a heat engine, mechanical heat can be obtained from high temperature to low temperature And the heat engine is here.
- T e . ld When work is performed between two temperatures, that is, the temperature difference caused by the thermal chirp of the heat dissipation body is used as the theory of internal energy or work of the automatic cycle.
- the light-emitting diode device uses at least one of the The light-emitting diode device communicates its heat-dissipating body with a cooling liquid supply device through at least one circulation pipeline, so as to achieve the purpose of circulating-cooling the light-emitting diode device.
- FIG. 11a and FIG. 11b a block diagram of a light emitting diode heat sink 400 according to a preferred embodiment of the present invention is shown.
- the light emitting diode heat dissipating device includes four light emitting diode devices 300, a cooling liquid circulation pipeline 410, a hot water curved circulation tube 410A pressurized after the temperature is increased, and a cooling liquid supply device.
- the cooling liquid supply device 420 provides a cooling liquid 430 in The heat dissipation body 340 and the circulation pipes 410 and 410A of the light emitting diode device 300 circulate in a system.
- the cooling liquid supply device may be a cooling liquid tank containing a pressure pump, an injection cooling liquid tank, or a closed type self-circulating system without external power that generates pressurized kinetic energy only by heat energy absorbed by the cooling liquid.
- the hot water curved circulation pipe 410A which is pressurized after the temperature is raised, can control the energy points required for pressurization and heating during circulation, and has the special function of being able to circulate while cooling.
- the light-emitting diode heat dissipation device of the present invention can be further applied to the integration of vehicle light-emitting diode lighting equipment, such as a headlight, a fog lamp, and a direction lamp designed according to the light-emitting diode device having a heat dissipation structure according to the present invention.
- vehicle light-emitting diode lighting equipment such as a headlight, a fog lamp, and a direction lamp designed according to the light-emitting diode device having a heat dissipation structure according to the present invention.
- the brake lights or enter the home, the people's livelihood lighting system only need to be combined with a pressurized water tank, or the use of cooling fluid thermal expansion of pressurized kinetic energy to create an automatic circulation system.
- the light emitting diode device 300 with a heat dissipation structure according to the present invention may further be electrically connected with a control unit 520 by using a circuit 510 to form a lighting device 500, which may be, for example, an indoor light or a large outdoor light. , Spotlights, traffic lights, street lights and car lights.
- the control unit is used to light up or extinguish the light-emitting diode crystals of the light-emitting diode device, such as an electric switch.
- FIG. 13 is a schematic diagram of a preferred embodiment of a lighting device 500 according to the present invention.
- the lighting device 500 may be, for example, a car light.
- a control unit 520 is electrically connected to the light emitting diode device 300 by a circuit 510.
- the lighting device 500 has a wide-angle lampshade 530 with a plurality of convex lens portions 540 thereon, which can increase the irradiation angle of the light-emitting diode devices 300.
- a knot is shown A light-emitting diode device 300 and a vehicle lamp system 600 of a mesh-type vehicle radiator water tank 610 are combined.
- the light-emitting diode device with a heat-dissipating device structure of the present invention uses various heat-conducting seats or thermal-conducting posts as the bearing seats of the LED chip.
- the cooling liquid absorbs the heat generated by the light emitting diode chip, and then transfers the heat to the heat dissipation body to be directly radiated to the environment. In this way, under the premise of keeping the light emitting diode at a normal operating temperature, the light emitting diode can be driven at a higher current to exert higher power.
- the conventional light-emitting diode device uses a large-area metal substrate as a heat-dissipating component of the light-emitting diode device.
- the substrate also has a plurality of wires (generally gold wires) electrically connected to the LED chip. Therefore, when the substrate absorbs the heat generated by the crystal grains and causes the temperature to rise, an excessively high temperature will cause the wires on the substrate to fall off or even break.
- the light-emitting diode device with a heat-dissipating structure according to the present invention uses multiple components to perform multiple types of heat conduction or heat dissipation, so the problems caused by the conventional technology can be avoided.
- the light-emitting diode device 700 has a heat-dissipating body 701, a carrier 702, a cavity 703, a plurality of light-emitting diode dies 704, and a cooling liquid 705.
- the heat dissipating body 701 has an opening, and the supporting base has a first surface and a second surface, wherein the second surface is located on the opposite side of the first surface.
- the support base 702 is disposed on the heat dissipation body 701 and is connected to the opening of the heat dissipation body 701.
- a cavity 703 is formed between the second surface of the support base 702 and the heat dissipation body, and the cooling liquid 705 is filled.
- the method of injecting the cooling liquid 705 is not particularly limited, and it may be injected through the opening at first, or it may be additionally provided by the heat dissipation body 701 Injection port.
- the heat dissipation body 701 may have a plurality of engaging portions 708 to fix the supporting base 702.
- the heat dissipating body 701 and the supporting base 702 can also be integrally formed.
- the plurality of LED chips 704 are disposed on a first surface of the supporting base 702. It is worth noting that the first surface of the supporting base 702 may be a flat surface (as shown in FIG. 15), and the first surface is also There may be a recessed portion (as shown in FIG. 16) or a protruding portion (as shown in FIG. 17 b), and the complex light emitting diode die 704 may be disposed on the recessed portion or the surface of the protruding portion.
- the plurality of LED chips 704 can be electrically connected to a circuit board 706 by a wire 707.
- the heat sink body is U-shaped in design. Even if the heat sink body 701 extends from below the carrier 702 to above the periphery of the LED chip 704, The reason for increasing the heat dissipation efficiency is that when the light-transmitting cover covers and seals the light-emitting diode die, since the thermal energy will be concentrated around the light-emitting diode die 704 instead of below the carrier 702, it extends to the light-emitting diode die.
- the cooling liquid in the main body 701 above and around 704 can absorb heat more quickly and effectively.
- a through hole 710 may be provided directly below the light emitting diode die 704, penetrating the carrier 702, and the light emitting diode die 704 completely covers the through hole (that is, the through hole). 710 disturbs the LED chip 704).
- the purpose of designing the through hole is to make the bottom of the LED chip contact with the cooling liquid through the through hole, and increase the heat dissipation efficiency.
- the conductive part can be made on the upper part, or the bottom part of the diode die (such as a silicon substrate) can be made non-conductive, so it will not affect the light emitting efficiency of the LED die.
- the light-emitting diode heat sink 800 houses the light-emitting diode device 700, a coolant circulation line 730, and a coolant tank. 720, and the cooling liquid tank communicates with the light emitting diode device 700 through the cooling liquid circulation pipe 730.
- the cooling liquid tank 720 uses the principle of thermal convection, so that the heat dissipation body of the light emitting diode device 700 and the circulation pipeline 730 form an internal circulation system. It is worth noting that the cooling liquid tank 720 is preferably arranged higher than the light emitting diode device in order to facilitate the convection of heat and increase the heat dissipation efficiency.
- the light-emitting diode device 900 having a heat dissipation structure according to the present invention may be further equipped with a pressure pump or a self-circulating system 740 without external power, and communicates with the cooling liquid tank and the light-emitting diode device. In this way, the heat dissipation efficiency can be greatly increased.
- the cavity of the heat-dissipating body in each of the above embodiments can be filled with 5% -50% of air, and the preferred embodiment is 5% -20%.
- the heat dissipation body cavity when there is air in the heat dissipation body cavity extending above the periphery of the light emitting diode, in addition to accelerating the heat circulation speed of the coolant, the heat dissipation body cavity can also be prevented from being absorbed by the coolant The resulting thermal expansion bursts.
- Light-emitting diode die 210
- Cooling body 240
- Body wall of the cooling body 241 Lens: 250
- Array light-emitting diode device 300 various thermally conductive bases or columns: 310 Load-bearing surface: 312
- LED die 320
- Printed circuit board 330
- Printed circuit board top 334 Bottom of printed circuit board: 336 Thermal body: 340
- Light-emitting diode heat sink 400 circulation pipe: 410
- Coolant supply unit 420 Coolant: 430
- Wide-angle lampshade 530
- Cooling water tank 720
- Booster pump or self-circulating system without external power 740 LED heat sink: 800, 900
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
Abstract
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CN200410029972.X | 2004-04-08 | ||
CN200410029972 | 2004-04-08 |
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PCT/CN2005/000460 WO2005098971A1 (fr) | 2004-04-08 | 2005-04-08 | Dispositif a diode electroluminescente, dispositif de dispersion de chaleur a diode electroluminescente et appareil d'eclairage comprenant le dispositif precite |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101713530B (zh) * | 2009-11-13 | 2011-04-13 | 珠海华博科技工业有限公司 | 具有散热结构的led灯 |
US8596834B2 (en) | 2006-09-29 | 2013-12-03 | Osram Gesellschaft mit beschränkter Haftung | Heatsink and illumination system with a heatsink |
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JP2000216443A (ja) * | 1999-01-25 | 2000-08-04 | Citizen Electronics Co Ltd | 表面実装型発光ダイオ―ド及びその製造方法 |
WO2002069409A1 (fr) * | 2001-02-22 | 2002-09-06 | Weldon Technologies, Inc. | Diode electroluminescente grande puissance |
US6459130B1 (en) * | 1995-09-29 | 2002-10-01 | Siemens Aktiengesellschaft | Optoelectronic semiconductor component |
CN2540685Y (zh) * | 2002-06-03 | 2003-03-19 | 葛世潮 | 高效率大功率发光二极管 |
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US6459130B1 (en) * | 1995-09-29 | 2002-10-01 | Siemens Aktiengesellschaft | Optoelectronic semiconductor component |
JP2000216443A (ja) * | 1999-01-25 | 2000-08-04 | Citizen Electronics Co Ltd | 表面実装型発光ダイオ―ド及びその製造方法 |
WO2002069409A1 (fr) * | 2001-02-22 | 2002-09-06 | Weldon Technologies, Inc. | Diode electroluminescente grande puissance |
CN2540685Y (zh) * | 2002-06-03 | 2003-03-19 | 葛世潮 | 高效率大功率发光二极管 |
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US8596834B2 (en) | 2006-09-29 | 2013-12-03 | Osram Gesellschaft mit beschränkter Haftung | Heatsink and illumination system with a heatsink |
CN101713530B (zh) * | 2009-11-13 | 2011-04-13 | 珠海华博科技工业有限公司 | 具有散热结构的led灯 |
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