CN2540685Y - 高效率大功率发光二极管 - Google Patents

高效率大功率发光二极管 Download PDF

Info

Publication number
CN2540685Y
CN2540685Y CN02236692U CN02236692U CN2540685Y CN 2540685 Y CN2540685 Y CN 2540685Y CN 02236692 U CN02236692 U CN 02236692U CN 02236692 U CN02236692 U CN 02236692U CN 2540685 Y CN2540685 Y CN 2540685Y
Authority
CN
China
Prior art keywords
light
emitting diode
chip
backlight unit
high power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN02236692U
Other languages
English (en)
Inventor
葛世潮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Manelux Lighting Co Ltd
Original Assignee
葛世潮
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to CN02236692U priority Critical patent/CN2540685Y/zh
Application filed by 葛世潮 filed Critical 葛世潮
Priority to KR1020097019924A priority patent/KR100991829B1/ko
Priority to PCT/CN2002/000930 priority patent/WO2003056636A1/zh
Priority to US10/500,315 priority patent/US7497596B2/en
Priority to KR1020097019925A priority patent/KR20090115810A/ko
Priority to JP2003557050A priority patent/JP2005513815A/ja
Priority to KR1020047010358A priority patent/KR100991830B1/ko
Priority to AU2002367196A priority patent/AU2002367196A1/en
Priority to EP02790249A priority patent/EP1467414A4/en
Priority to KR1020097019923A priority patent/KR100991827B1/ko
Priority to CNB028261275A priority patent/CN100373638C/zh
Application granted granted Critical
Publication of CN2540685Y publication Critical patent/CN2540685Y/zh
Priority to US11/430,914 priority patent/US7347589B2/en
Priority to US12/265,911 priority patent/US7736027B2/en
Priority to JP2009241101A priority patent/JP2010050473A/ja
Priority to JP2009241098A priority patent/JP2010050472A/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

一种大功率高效率大功率发光二极管，它包括有至少一个发光二极管芯片，它们被安装在一个金属基体上，芯片上方有一光反射装置和一定形状的透光介质；金属基体有至少一个螺丝或至少一个螺丝孔，用于与散热装置相连；芯片的电极经与金属基体绝缘的引线或金属基体引出，从而可制成大功率、高效率的发光二极管，用于照明、交通灯、汽车灯、飞机阅读灯、射灯和信息显示等，与现有技术相比，具有效率高、功率大、寿命长等特点。

Description

高效率大功率发光二极管
                         技术领域
本发明涉及的是一种高效率大功率发光二极管，用于照明、交通灯、汽车灯、飞机阅读灯、射灯和和信息显示等。
                         背景技术
目前，发光二极管已被广泛用于显示器、指示灯等。图1为现有技术的发光二极管的结构示意图，它包括有发光二极管的芯片1，被安装在一个金属引线2顶部的反射碗3内，发光二极管的另一引线4通过金属引线5与发光二极管芯片1相连，芯片1的周围有透光介质6，例如环氧树脂。由发光二极管芯片1发出的光一部分7可直接或经由反射碗3从透光介质顶部出射，这部分为有用的光；但由发光二极管芯片1发出的另一部分光8将从发光二极管的側面逃脱，另有一部分9将在发光二极管内产生全反射而从发光二极管的側面或底部逃脱。同时，由图1还可见，现有发光二极管芯片周围均为绝热的透光介质，而引出线2为一细的金属线，发光二极管芯片产生的热难于有效地散发掉，使芯片温度升高，发光效率下降，因而难于制成大功率发光二极管。
总结以上现有技术所存在的不足有：一是发光二极管芯片所发的光不能被充分利用，部分从芯片发出的光会从发光二极管側墙和因发光二极管内部的光的全反射而损失掉；特别是在为了制造大功率高效率发光二极管而使用较大面积或多个发光二极管芯片时，这些损失将更为严重；二是芯片被安装在一个小的金属反射体上，此金属体和芯片周围都是透光介质，例如环氧树脂，所述透光介质是热的不良导体，而输入管芯的电功率约有80％将转变成热能，从而会使芯片温度升高，而现有发光二极管芯片的发光效率几乎随温度的上升而直线下降，因而难于制成大功率高效率发光二极管。
                         发明内容
本实用新型的目的在于克服上述存在的不足，而提供一种可制成高效率大功率的发光二极管。它包括至少一个发光二极管芯片，所述的发光二极管芯片被安装在高热导率金属基体的反射面上，所述的发光二极管芯片上方有一由塑料、环氧树脂或金属制成的反射装置，该反射器的反射面为高反射率面，例如为银、铝或合金层，它可将由芯片发出、可能从发光二极管側面逃脱或因内全反射而损失掉的光反射向前方，从而提高光的利用率；金属基体可与一散热装置连结，可有效地将芯片产生的热散发掉，使芯片工作于高效率的较低温度的状态；从而可制成大功率高效率发光二极管。
所述发光二极管芯片的电极经至少一条引线、至少一条引出线或金属基体引出，用于连接外电源。所述的引出线与金属基体之间有绝缘装置和绝缘层，所述的绝缘装置为环形或其它形状的电路板，由陶瓷或电路板等制成，其上表面有电路导电层，电路导电层与发光二极管芯片的电极之间有引线，引出线与电路导电层连接。
本实用新型所述的金属基体上设置有至少一个螺丝或至少一个螺丝孔，用于与散热装置连接；金属基体由高热导率材料制成，例如铜、银、铝或合金等；其反射面为高反射率面，例如银、铝或合金层等；金属基体与散热装置间有导热层。
所述的至少一个发光二极管芯片可为相同发光色或不同色的，它们可按需要并联、串联或串并联。
所述的至少一个发光二极管芯片上可有光转换材料，它可吸收发光二极管芯片发出的光，例如蓝光或紫外光，而发出其它所需色的光、从而可制成白光或其它所需色光的发光二极管。
本实用新型的发光二极管的高效散热装置和光反射装置，使发光二极管芯片工作于高效率的较低温度下，芯片所发的光可充分得到利用。它与现有技术的发光二极管相比，具有效率高、功率大、寿命长等优点。
                        附图说明
图1为现有技术的发光二极管的光损失的原理示意图。
图2为本实用新型的高效率大功率发光二极管的实施例结构示意图
                      具体实施方式、
下面将结合附图对本实用新型作详细介绍：图2所示，它包括有至少一个发光二极管芯片10，它被安装在高热导率金属基体11的反射面或反射碗12上。所述芯片10上方有一光反射装置13，可将原本可能由发光二极管側面或经内全反射逃脱的光(如图1中8、9所示)反射向前方而被重新利用，如图2中14所示，从而提高光的利用率。所述金属基体11由高热导率金属制成，例如铜、银、铝或合金等；所述金属基体11有至少一个螺丝15或至少一个螺丝孔(图中未示出)，用于和散热装置16相连接。所述金属基体11可直接与散热装置16紧密接触，也可在二者之间有导热绝缘层或导热导电层17。若发光二极管芯片10的正负电极分别在芯片的顶面和底面，则底面电极可用银浆等导电胶18与金属基体11相连，其顶面电极则经引线19和与金属基体11绝缘的引出线20引出，用于连接外电源；引出线20与金属基体11之间有绝缘装置21和缘装层22。引出线20也可从发光二极管的側面引出(图中未示出)。若芯片10的正负电极都在顶面，则其中一个电极可经引线23与金属基体11相连，也可经另一个与19、20相似的引线引出；当芯片有多个时，所述引线19、20可按需要有多个。
所述芯片10上方的光反射装置13，它由导体或非导体制成，例如塑料、环氧树脂或金属等；其面反射面24为高反射率层，例如银、铝或合金层等；此反射面24可将原本可能由发光二极管側面或经内全反射逃脱的光(如图1中8、9所示)反射向前方而被重新利用，如图2中14所示，从而提高光的利用率。所述光反射装置13的反射面24可按输出光结构的要求设计成圆锥面、抛物面、椭球面或其它曲面。
所述的绝缘装置21可为一环状或其它形状的电路板，由陶瓷或电路板等制成，其上表面有导电层25，用于连接引线19和引出线20以及用于多个芯片之间的连接。
所述芯片10的周围为透光介质26，例如环氧树脂或光学胶等，它为透明、着色或漫射的，其顶面可按输出光结构的要求设计成平面、球面、椭球面或其它曲面。
图2所示的结构可得到高效率、大功率的不同光输出分布的发光二极管。所述至少一个发光二极管芯片10可以是相同发光色或不同发光色的，它们可按需要并联、串联或串并联。
所述至少一个发光二极管芯片10上还可有光转换材料27，它可吸收芯片10所发的光，例如蓝光或紫外线，发出所需色的光，从而可制成白光或其它所需色光的发光二极管。
本实用新型要求保护的范围不限于本文中介绍的各实施例，涉及的专门技术是本专业一般人员所熟悉的，因此只要了解本实用新型的内容，可以做各种形式的变换和代换。

Claims (6)

1、一种高效率大功率发光二极管，它包括至少一个发光二极管芯片，其特征在于所述的发光二极管芯片(10)被安装在高热导率金属基体(11)的反射面(12)上，金属基体(11)与一散热装置(16)连结；所述芯片(10)上方有一个光反射装置(13)；发光二极管芯片(10)的电极经引线(19、20、23)或金属基体(11)引出，引出线(20)与金属基体(11)间有绝缘装置(21、22)。
2、如权利要求1所述的高效率大功率发光二极管，其特征在于所述的金属基体(11)上有至少一个用于和散热装置(16)连结的螺丝(15)或至少一个螺丝孔，，金属基体(11)由铜、银或合金等高热导率材料制成，其反射面(12)为高反射率的银、铝或合金层，金属基体(11)与散热装置(14)间有导热绝缘层或导热导电层(17)。
3、如权利要求1所述的高效率大功率发光二极管，其特征在于所述的光反射装置(13)由塑料、环氧树脂或金属制成，其上的反射面(24)为由银、铝或合金层构成的高反射率面，该光反射面(24)的截面为圆锥面、抛物面、椭球面或其它曲面。
4、如权利要求1所述的高效率大功率发光二极管，其特征在于所述的至少一个发光二极管芯片(10)可为相同发光色或不同色的，它们可按需要并联、串联或串并联。
5、如权利要求1或4所述的高效率大功率发光二极管，其特征在于所述的至少一个发光二极管芯片(10)上可有光转换材料(27)。
6、如权利要求1所述的高效率大功率发光二极管，其特征在于所述的绝缘装置(21)可为一由陶瓷或电路板等制成的环状或其它形状的电路板，其上表面有导电层(25)，用于连接引线(19)和引出线(20)以及用于多个芯片之间的连接。
CN02236692U 2001-12-29 2002-06-03 高效率大功率发光二极管 Expired - Lifetime CN2540685Y (zh)

Priority Applications (15)

Application Number Priority Date Filing Date Title
CN02236692U CN2540685Y (zh) 2002-06-03 2002-06-03 高效率大功率发光二极管
CNB028261275A CN100373638C (zh) 2001-12-29 2002-12-30 发光二极管及其发光二极管灯
US10/500,315 US7497596B2 (en) 2001-12-29 2002-12-30 LED and LED lamp
KR1020097019925A KR20090115810A (ko) 2001-12-29 2002-12-30 Ｌｅｄ 및 ｌｅｄ램프
JP2003557050A JP2005513815A (ja) 2001-12-29 2002-12-30 発光ダイオード及び発光ダイオード・ランプ
KR1020047010358A KR100991830B1 (ko) 2001-12-29 2002-12-30 Ｌｅｄ 및 ｌｅｄ램프
AU2002367196A AU2002367196A1 (en) 2001-12-29 2002-12-30 A led and led lamp
EP02790249A EP1467414A4 (en) 2001-12-29 2002-12-30 LED AND LED LAMP
KR1020097019924A KR100991829B1 (ko) 2001-12-29 2002-12-30 Ｌｅｄ 및 ｌｅｄ램프
PCT/CN2002/000930 WO2003056636A1 (en) 2001-12-29 2002-12-30 A led and led lamp
KR1020097019923A KR100991827B1 (ko) 2001-12-29 2002-12-30 Ｌｅｄ 및 ｌｅｄ램프
US11/430,914 US7347589B2 (en) 2001-12-29 2006-05-10 LED and LED lamp
US12/265,911 US7736027B2 (en) 2001-12-29 2008-11-06 LED and LED lamp
JP2009241101A JP2010050473A (ja) 2001-12-29 2009-10-20 発光ダイオード平面光源
JP2009241098A JP2010050472A (ja) 2001-12-29 2009-10-20 発光ダイオード・ランプ及び発光ダイオード交通灯

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN02236692U CN2540685Y (zh) 2002-06-03 2002-06-03 高效率大功率发光二极管

Publications (1)

Publication Number Publication Date
CN2540685Y true CN2540685Y (zh) 2003-03-19

Family

ID=33710878

Family Applications (1)

Application Number Title Priority Date Filing Date
CN02236692U Expired - Lifetime CN2540685Y (zh) 2001-12-29 2002-06-03 高效率大功率发光二极管

Country Status (1)

Country Link
CN (1) CN2540685Y (zh)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005098971A1 (fr) * 2004-04-08 2005-10-20 Yu-Chao Wu Dispositif a diode electroluminescente, dispositif de dispersion de chaleur a diode electroluminescente et appareil d'eclairage comprenant le dispositif precite
CN100375300C (zh) * 2003-11-25 2008-03-12 葛世潮 大功率发光二极管
CN100444415C (zh) * 2004-07-06 2008-12-17 旭山光电股份有限公司 气密式高导热芯片封装组件
CN100452455C (zh) * 2005-01-31 2009-01-14 三星电机株式会社 Led封装框架和具有该led封装框架的led封装
CN101232063B (zh) * 2007-01-26 2011-06-29 深圳市方大国科光电技术有限公司 一种大功率led台灯组装方法
CN102280564A (zh) * 2011-08-19 2011-12-14 华南师范大学 具有荧光粉散热层的发光二极管
CN101297153B (zh) * 2005-10-28 2012-07-04 飞利浦拉米尔德斯照明设备有限责任公司 多件式反射角变换器
US8227821B2 (en) 2004-09-22 2012-07-24 Osram Opto Semiconductors Gmbh Housing for an optoelectronic component, optoelectronic component and method for the production of an optoelectronic component
WO2013020330A1 (zh) * 2011-08-09 2013-02-14 深圳市瑞丰光电子股份有限公司 一种led模组及照明装置
CN104990020A (zh) * 2015-08-04 2015-10-21 苏州晶品新材料股份有限公司 一种双面出光薄片式led汽车大灯

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100375300C (zh) * 2003-11-25 2008-03-12 葛世潮 大功率发光二极管
WO2005098971A1 (fr) * 2004-04-08 2005-10-20 Yu-Chao Wu Dispositif a diode electroluminescente, dispositif de dispersion de chaleur a diode electroluminescente et appareil d'eclairage comprenant le dispositif precite
CN100444415C (zh) * 2004-07-06 2008-12-17 旭山光电股份有限公司 气密式高导热芯片封装组件
US8227821B2 (en) 2004-09-22 2012-07-24 Osram Opto Semiconductors Gmbh Housing for an optoelectronic component, optoelectronic component and method for the production of an optoelectronic component
CN100452455C (zh) * 2005-01-31 2009-01-14 三星电机株式会社 Led封装框架和具有该led封装框架的led封装
US7968894B2 (en) 2005-01-31 2011-06-28 Samsung Electro-Mechanics Co., Ltd. LED package frame and LED package having the same
US7592631B2 (en) 2005-01-31 2009-09-22 Samsung Electro-Mechanics Co., Ltd. LED package frame and LED package having the same
CN101297153B (zh) * 2005-10-28 2012-07-04 飞利浦拉米尔德斯照明设备有限责任公司 多件式反射角变换器
US8231251B2 (en) 2005-10-28 2012-07-31 Philips Lumileds Lighting Company Llc Multiple piece reflective angle transformer
CN101232063B (zh) * 2007-01-26 2011-06-29 深圳市方大国科光电技术有限公司 一种大功率led台灯组装方法
WO2013020330A1 (zh) * 2011-08-09 2013-02-14 深圳市瑞丰光电子股份有限公司 一种led模组及照明装置
CN102280564A (zh) * 2011-08-19 2011-12-14 华南师范大学 具有荧光粉散热层的发光二极管
CN104990020A (zh) * 2015-08-04 2015-10-21 苏州晶品新材料股份有限公司 一种双面出光薄片式led汽车大灯

Similar Documents

Publication Publication Date Title
CN1286175C (zh) 大功率发光二极管发光装置
CN203309554U (zh) 一种全方位出光的led照明灯
CN2644878Y (zh) 发光二极管灯
CN2585273Y (zh) 发光二极管照明装置
CN2540685Y (zh) 高效率大功率发光二极管
CN1359137A (zh) 超导热管灯
CN101097973A (zh) 大功率led二维光源
CN201344394Y (zh) 大功率白光led模块
CN100421269C (zh) 一种低热阻的发光二极管封装装置
CN201180947Y (zh) 发光二极管组合结构
CN201259112Y (zh) 一种大功率led灯条及由其组成的灯排和灯箱
CN201373367Y (zh) 一种利用半导体制冷的大功率led光源模块
CN2517112Y (zh) 大功率发光二极管
CN1716646A (zh) 功率型led照明光源的封装结构
CN101650007A (zh) 功率型交流led光源
CN2544416Y (zh) 大功率发光二极管
CN201753850U (zh) 一种led照明模组及专用模具
CN2526981Y (zh) 高效率发光二极管
CN2713647Y (zh) 功率型白光发光二极管
CN101093828A (zh) 紧凑型大功率发光二极管的封装结构
CN2679856Y (zh) 一种大功率发光二极管器件
CN203023841U (zh) 芯片倒装于透明陶瓷管的4π出光LED发光管及照明灯
CN201851969U (zh) Led平板面光源
CN200982607Y (zh) Led灯的散热结构
CN2557805Y (zh) 大功率发光二极管灯

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: HANGZHOU FUYANG NOVELTY ELECTRONICS CO., LTD.

Free format text: FORMER OWNER: GE SHICHAO

Effective date: 20040109

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20040109

Address after: 311404 Hangzhou Fuyang New Economic Development Zone

Patentee after: Hangzhou Fuyang Novel Electronics Co., Ltd.

Address before: Two road 310012 Zhejiang city in Hangzhou Province, the Qiuzhi Lane room 2-203

Patentee before: Ge Shichao

C56 Change in the name or address of the patentee

Owner name: ZHEJIANG MANELUX LIGHTING CO., LTD.

Free format text: FORMER NAME: HANGZHOU FUYANG XINYING ELECTRONICS CO., LTD.

CP01 Change in the name or title of a patent holder

Address after: China Fuyang New Economic Development Zone, Hangzhou: 311404

Patentee after: Zhejiang Manelux Lighting Co., Ltd.

Address before: China Fuyang New Economic Development Zone, Hangzhou: 311404

Patentee before: Hangzhou Fuyang Novel Electronics Co., Ltd.

C17 Cessation of patent right
CX01 Expiry of patent term

Expiration termination date: 20120603

Granted publication date: 20030319