JP2007184643A - 光半導体パッケージ - Google Patents
光半導体パッケージ Download PDFInfo
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- JP2007184643A JP2007184643A JP2007085025A JP2007085025A JP2007184643A JP 2007184643 A JP2007184643 A JP 2007184643A JP 2007085025 A JP2007085025 A JP 2007085025A JP 2007085025 A JP2007085025 A JP 2007085025A JP 2007184643 A JP2007184643 A JP 2007184643A
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- semiconductor element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Abstract
【解決手段】主面の実装領域に光半導体素子22を載置するとともに導電性接着剤24により光半導体素子22と電気的に接続された金属片11と、金属ワイヤ26により光半導体素子22と電気的に接続された金属片12でなるリードフレーム13と、透光性樹脂により形成され、光半導体素子22を覆うように配設された透光性部材16と、遮光性樹脂により形成され、リードフレーム13のインナーリード部を支持する底部と透光性部材16を支持する側部とを有する遮光性樹脂成型体14とを備えた光半導体パッケージ1において、金属片12について、光半導体素子22を搭載する実装領域に対応する裏面領域を遮光性樹脂成型体14の底部を貫通して外部に露出させて第1の放熱領域とする。
【選択図】図1
Description
光半導体素子と、
前記光半導体素子を覆うように配設された樹脂成型体と、
前記光半導体素子を主面に実装して前記光半導体素子の第1の端子と接続される第1の部分と、前記樹脂成形体に支持されて前記樹脂成形体の内部から前記樹脂成形体の外側へ延設された複数の第2の部分とを有するリードフレームと、
を備え、
前記リードフレームの前記第1の部分は、その裏面が前記樹脂成形体の底部を貫通して下側へ突出するように形成されて第1の放熱領域をなし、前記第2の部分のいずれかは前記光半導体素子の第2の端子と接続され、その前記樹脂成型体から外側の領域は第2の放熱領域をなし、前記第1の部分の前記裏面と、前記第2の部分の外側端部の裏面とはほぼ同じ面に位置する、
光半導体パッケージが提供される。
まず、本発明にかかる光半導体パッケージの第1の実施の形態について図1を参照しながら説明する。同図に示すように、本実施形態の特徴は、光半導体素子により発生した熱を水平方向と底面方向に放出するリードフレーム13と、このリードフレーム13を保持するとともに透光性部材16を支持する遮光性樹脂成型体14とを備える点にある。
次に、本発明にかかる光半導体パッケージの第2の実施の形態について図2を参照しながら説明する。
11,12,31,32 金属片
13,34 リードフレーム
14,36 遮光性樹脂成型体(第1の樹脂成型体)
16 透光性樹脂成型体(第2の樹脂成型体)
22 光半導体素子(LED)
24 導電性接着剤
26,27 金属ワイヤ
S1,S2 傾斜面
Claims (7)
- 光半導体素子と、
前記光半導体素子を覆うように配設された樹脂成型体と、
前記光半導体素子を主面に実装して前記光半導体素子の第1の端子と接続される第1の部分と、前記樹脂成形体に支持されて前記樹脂成形体の内部から前記樹脂成形体の外側へ延設された複数の第2の部分とを有するリードフレームと、
を備え、
前記リードフレームの前記第1の部分は、その裏面が前記樹脂成形体の底部を貫通して下側へ突出するように形成されて第1の放熱領域をなし、前記第2の部分のいずれかは前記光半導体素子の第2の端子と接続され、その前記樹脂成型体から外側の領域は第2の放熱領域をなし、前記第1の部分の前記裏面と、前記第2の部分の外側端部の裏面とはほぼ同じ面に位置する、
光半導体パッケージ。 - 前記樹脂成形体は、前記光半導体素子からの光を反射させる傾斜面を側部に有することを特徴とする請求項1に記載の光半導体パッケージ。
- 前記リードフレームは、外側端部と前記第1の領域との間で前記樹脂に覆われるように折り曲げて形成されることを特徴とする請求項1または2に記載の光半導体パッケージ。
- 前記樹脂成形体は、前記光半導体素子の光軸上で光学指向性が得られるレンズ形状で予め成型され、前記光半導体素子を覆って形成される樹脂を介して前記リードフレームに固着されることを特徴とする請求項1乃至3のいずれかに記載の光半導体パッケージ。
- 前記リードフレームは、
前記第1の部分に形成された凹部を有し、
前記凹部の底面は前記実装領域となり、
前記凹部の側面は光を反射させる傾斜面をなすことを特徴とする請求項1乃至4のいずれかに記載の光半導体パッケージ。 - 前記樹脂成型体は、前記光半導体素子の光軸上で光学指向性が得られるレンズ形状をなすように鋳型を用いて成型されることを特徴とする請求項1乃至5のいずれかに記載の光半導体パッケージ。
- 前記リードフレームの厚みは一定であることを特徴とする請求項1乃至6のいずれかに記載の光半導体パッケージ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007085025A JP2007184643A (ja) | 2007-03-28 | 2007-03-28 | 光半導体パッケージ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007085025A JP2007184643A (ja) | 2007-03-28 | 2007-03-28 | 光半導体パッケージ |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP36937499A Division JP3964590B2 (ja) | 1999-12-27 | 1999-12-27 | 光半導体パッケージ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007184643A true JP2007184643A (ja) | 2007-07-19 |
JP2007184643A5 JP2007184643A5 (ja) | 2008-01-10 |
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ID=38340374
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JP2007085025A Pending JP2007184643A (ja) | 2007-03-28 | 2007-03-28 | 光半導体パッケージ |
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JP (1) | JP2007184643A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010287914A (ja) * | 2010-09-14 | 2010-12-24 | Toshiba Electronic Engineering Corp | 光半導体パッケージ |
US8513680B2 (en) | 2010-12-21 | 2013-08-20 | Samsung Electronics Co., Ltd. | Semiconductor package and method of manufacturing the same |
Citations (15)
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JPS49112163U (ja) * | 1973-01-23 | 1974-09-25 | ||
JPS58101445A (ja) * | 1981-12-11 | 1983-06-16 | Mitsubishi Electric Corp | 樹脂封止半導体装置 |
JPS60138944A (ja) * | 1983-12-27 | 1985-07-23 | Toshiba Corp | 封止型半導体装置 |
JPH05166979A (ja) * | 1991-12-16 | 1993-07-02 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JPH06290476A (ja) * | 1993-04-01 | 1994-10-18 | Seiko Epson Corp | 光半導体装置、半導体レーザーユニット、及び光メモリ装置用光ヘッド |
JPH0713047A (ja) * | 1993-06-23 | 1995-01-17 | Hitachi Ltd | 光素子モジュール |
JPH07147360A (ja) * | 1993-11-25 | 1995-06-06 | Sanyo Electric Co Ltd | 表面実装型半導体装置 |
WO1997012386A2 (de) * | 1995-09-29 | 1997-04-03 | Siemens Aktiengesellschaft | Optoelektronisches halbleiter-bauelement |
WO1998020718A1 (en) * | 1996-11-06 | 1998-05-14 | Siliconix Incorporated | Heat sink-lead frame structure |
JPH10233532A (ja) * | 1997-02-21 | 1998-09-02 | Houshin Kagaku Sangiyoushiyo:Kk | 発光ダイオード |
WO1999007023A1 (de) * | 1997-07-29 | 1999-02-11 | Osram Opto Semiconductors Gmbh & Co. Ohg | Optoelektronisches bauelement |
JPH1187780A (ja) * | 1997-09-04 | 1999-03-30 | Sharp Corp | 発光装置 |
JPH11145364A (ja) * | 1997-11-12 | 1999-05-28 | Denso Corp | 樹脂封止型半導体装置及びその製造方法 |
JPH11345912A (ja) * | 1998-05-29 | 1999-12-14 | Rohm Co Ltd | 面実装型半導体装置 |
US6335548B1 (en) * | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
-
2007
- 2007-03-28 JP JP2007085025A patent/JP2007184643A/ja active Pending
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS49112163U (ja) * | 1973-01-23 | 1974-09-25 | ||
JPS58101445A (ja) * | 1981-12-11 | 1983-06-16 | Mitsubishi Electric Corp | 樹脂封止半導体装置 |
JPS60138944A (ja) * | 1983-12-27 | 1985-07-23 | Toshiba Corp | 封止型半導体装置 |
JPH05166979A (ja) * | 1991-12-16 | 1993-07-02 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JPH06290476A (ja) * | 1993-04-01 | 1994-10-18 | Seiko Epson Corp | 光半導体装置、半導体レーザーユニット、及び光メモリ装置用光ヘッド |
JPH0713047A (ja) * | 1993-06-23 | 1995-01-17 | Hitachi Ltd | 光素子モジュール |
JPH07147360A (ja) * | 1993-11-25 | 1995-06-06 | Sanyo Electric Co Ltd | 表面実装型半導体装置 |
WO1997012386A2 (de) * | 1995-09-29 | 1997-04-03 | Siemens Aktiengesellschaft | Optoelektronisches halbleiter-bauelement |
WO1998020718A1 (en) * | 1996-11-06 | 1998-05-14 | Siliconix Incorporated | Heat sink-lead frame structure |
JPH10233532A (ja) * | 1997-02-21 | 1998-09-02 | Houshin Kagaku Sangiyoushiyo:Kk | 発光ダイオード |
WO1999007023A1 (de) * | 1997-07-29 | 1999-02-11 | Osram Opto Semiconductors Gmbh & Co. Ohg | Optoelektronisches bauelement |
JPH1187780A (ja) * | 1997-09-04 | 1999-03-30 | Sharp Corp | 発光装置 |
JPH11145364A (ja) * | 1997-11-12 | 1999-05-28 | Denso Corp | 樹脂封止型半導体装置及びその製造方法 |
JPH11345912A (ja) * | 1998-05-29 | 1999-12-14 | Rohm Co Ltd | 面実装型半導体装置 |
US6335548B1 (en) * | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010287914A (ja) * | 2010-09-14 | 2010-12-24 | Toshiba Electronic Engineering Corp | 光半導体パッケージ |
US8513680B2 (en) | 2010-12-21 | 2013-08-20 | Samsung Electronics Co., Ltd. | Semiconductor package and method of manufacturing the same |
US8969143B2 (en) | 2010-12-21 | 2015-03-03 | Samsung Electronics Co., Ltd. | Semiconductor package and method of manufacturing the same |
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