JP4170950B2 - 光学デバイスおよびその製造方法 - Google Patents
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- H—ELECTRICITY
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
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- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Description
−光学デバイスの構造−
図1(a),(b)は、順に、第1の実施形態に係る光学デバイスのIA−IA線における断面図及び裏面図である。ただし、図1(a)と図1(b)とは、互いに異なる縮尺で描かれている。
図3(a)〜(f)は、本発明の実施形態に係る光学デバイスの製造工程を示す断面図である。ただし、図3(a)〜(c)に示す工程において、2個の光学デバイス形成領域のみが表示されているが、一般には、図3(a)〜(c)に示す工程においては、多数の光学デバイス形成領域を碁盤目状に有するリードフレームを用いて製造工程が進められる。
図5(a),(b)は、順に、第2の実施形態に係る光学デバイスのVA−VA線における断面図及び裏面図である。ただし、図5(a)と図5(b)とは、互いに異なる縮尺で描かれている。
5 光学素子チップ
5a 主面
5b パッド電極
6 窓部材
7 シール樹脂
8 バンプ
10 基台
10x 成形体
12 配線
12a 内部端子部
12b 外部端子部
13 半田ボール
15 シール樹脂
20 封止テープ
30 モールド金型
30a ダイキャビティ
30b 仕切部
40 ホログラム
40a 本体部
40b ホログラム領域
51 半導体チップ
52 金属細線
Claims (9)
- 開口部を有するようにモールド樹脂によってモールドしてなる平板状の基台と、
上記基台の入光方向に対峙する第1の面に上記開口部を覆って取り付けられた透光性部材と、
上記基台を構成する上記モールド樹脂内に埋め込まれ、上記基台の上記第1の面に対向する第2の面における上記開口部の周辺に位置する領域に内部端子部を露出させると共に、上記第2の面における上記基台の外縁部に位置する領域に外部端子部を露出させた複数の配線と、
上記基台の上記第2の面に、上記開口部を覆い且つその主面を上記透光性部材に向けて取り付けられ、その電極が上記内部端子部に電気的に接合された光学素子チップと、
上記基台を構成する上記モールド樹脂内に埋め込まれた半導体チップと、
上記基台を構成する上記モールド樹脂内に埋め込まれ、上記半導体チップと上記モールド樹脂内に埋め込まれた上記配線とを電気的に接続する接続部材と
を備えている光学デバイス。 - 請求項1記載の光学デバイスにおいて、
配線はリードフレームである,光学デバイス。 - 請求項1記載の光学デバイスにおいて、
上記基台の厚みが実質的に一定である,光学デバイス。 - 請求項1〜3のうちいずれか1つに記載の光学デバイスにおいて、
上記半導体チップは、上記配線上に搭載されている,光学デバイス。 - 請求項1〜4のうちいずれか1つに記載の光学デバイスにおいて、
上記光学素子チップは、撮像素子を搭載しており、
固体撮像装置である,光学デバイス。 - 請求項1〜4のうちいずれか1つに記載の光学デバイスにおいて、
上記光学素子チップは、受光素子を搭載しており、
光ピックアップ装置に組み込まれている,光学デバイス。 - 請求項1〜4のうちいずれか1つに記載の光学デバイスにおいて、
上記透光性部材は、ホログラムであり、
上記光学素子チップは、受光素子と発光素子とを搭載しており、
ホログラムユニットである,光学デバイス。 - 配線パターンを有し、下部に内部端子部及び外部端子となる凸部が設けられたリードフレームを準備する工程と、
上記リードフレームの上方に半導体チップを載置し、上記半導体チップ−上記リードフレーム間を接続部材により電気的に接続する工程と、
各々開口部を有する複数の光学デバイス形成領域を含み、各前記光学デバイス形成領域内に上記半導体チップ及び上記リードフレームを埋め込むと共に上記開口部の周辺に位置する領域に上記内部端子を露出させ且つ外縁部に位置する領域に上記外部端子を露出させるようにモールド樹脂によってモールドしてなる成形体を形成する工程と、
上記成形体を切断することにより、上記開口部を有する個別の平板状の基台を形成する工程と、
上記基台の上面に上記開口部を覆って透光性部材を取り付ける工程と、
上記基台の下面に上記開口部を覆って、光学素子チップをその電極と上記内部端子部とが電気的に接続され且つその主面が上記透光性部材に向くように取り付ける工程と
を含む光学デバイスの製造方法。 - 請求項8記載の光学デバイスの製造方法において、
前記成形体を形成する工程において、配線となるリードフレームを封止テープの上に載置した状態でモールド金型に取り付けて、樹脂モールドを行ない、上記樹脂モールド後に封止テープを剥がす,光学デバイスの製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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JP2004130300A JP4170950B2 (ja) | 2003-10-10 | 2004-04-26 | 光学デバイスおよびその製造方法 |
US10/958,296 US7485848B2 (en) | 2003-10-10 | 2004-10-06 | Optical device and production method thereof |
TW093130435A TWI254441B (en) | 2003-10-10 | 2004-10-07 | Optical device and production method thereof |
KR1020040080208A KR100583509B1 (ko) | 2003-10-10 | 2004-10-08 | 광학디바이스 및 그 제조방법 |
EP04024092A EP1523042A3 (en) | 2003-10-10 | 2004-10-08 | Optical device and production method thereof |
CNB2004100849861A CN100352056C (zh) | 2003-10-10 | 2004-10-09 | 光学器件及其制造方法 |
US12/240,635 US7755030B2 (en) | 2003-10-10 | 2008-09-29 | Optical device including a wiring having a reentrant cavity |
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JP2003352090 | 2003-10-10 | ||
JP2004130300A JP4170950B2 (ja) | 2003-10-10 | 2004-04-26 | 光学デバイスおよびその製造方法 |
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JP2005136373A JP2005136373A (ja) | 2005-05-26 |
JP4170950B2 true JP4170950B2 (ja) | 2008-10-22 |
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JP2004130300A Expired - Fee Related JP4170950B2 (ja) | 2003-10-10 | 2004-04-26 | 光学デバイスおよびその製造方法 |
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US (2) | US7485848B2 (ja) |
EP (1) | EP1523042A3 (ja) |
JP (1) | JP4170950B2 (ja) |
KR (1) | KR100583509B1 (ja) |
CN (1) | CN100352056C (ja) |
TW (1) | TWI254441B (ja) |
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2004
- 2004-04-26 JP JP2004130300A patent/JP4170950B2/ja not_active Expired - Fee Related
- 2004-10-06 US US10/958,296 patent/US7485848B2/en not_active Expired - Fee Related
- 2004-10-07 TW TW093130435A patent/TWI254441B/zh not_active IP Right Cessation
- 2004-10-08 EP EP04024092A patent/EP1523042A3/en not_active Withdrawn
- 2004-10-08 KR KR1020040080208A patent/KR100583509B1/ko not_active IP Right Cessation
- 2004-10-09 CN CNB2004100849861A patent/CN100352056C/zh not_active Expired - Fee Related
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7674225B2 (en) | 2004-03-26 | 2010-03-09 | International Innovative Solutions, Llc | Anatomic device |
Also Published As
Publication number | Publication date |
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TWI254441B (en) | 2006-05-01 |
KR100583509B1 (ko) | 2006-05-25 |
JP2005136373A (ja) | 2005-05-26 |
EP1523042A3 (en) | 2009-12-09 |
US7485848B2 (en) | 2009-02-03 |
US7755030B2 (en) | 2010-07-13 |
KR20050035091A (ko) | 2005-04-15 |
US20050077451A1 (en) | 2005-04-14 |
TW200514228A (en) | 2005-04-16 |
CN1606159A (zh) | 2005-04-13 |
EP1523042A2 (en) | 2005-04-13 |
CN100352056C (zh) | 2007-11-28 |
US20090032684A1 (en) | 2009-02-05 |
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