CN100352056C - 光学器件及其制造方法 - Google Patents
光学器件及其制造方法 Download PDFInfo
- Publication number
- CN100352056C CN100352056C CNB2004100849861A CN200410084986A CN100352056C CN 100352056 C CN100352056 C CN 100352056C CN B2004100849861 A CNB2004100849861 A CN B2004100849861A CN 200410084986 A CN200410084986 A CN 200410084986A CN 100352056 C CN100352056 C CN 100352056C
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- Prior art keywords
- base station
- optics
- optical element
- wiring
- casting
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 230000002093 peripheral effect Effects 0.000 claims abstract description 16
- 238000005266 casting Methods 0.000 claims description 48
- 229920005989 resin Polymers 0.000 claims description 38
- 239000011347 resin Substances 0.000 claims description 38
- 238000003384 imaging method Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 238000010125 resin casting Methods 0.000 claims description 6
- 241001232809 Chorista Species 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 abstract description 17
- 229910052751 metal Inorganic materials 0.000 abstract description 17
- 238000000465 moulding Methods 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 description 12
- 238000007789 sealing Methods 0.000 description 10
- 238000009434 installation Methods 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 239000007767 bonding agent Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
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- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003352090 | 2003-10-10 | ||
JP2003352090 | 2003-10-10 | ||
JP2004130300 | 2004-04-26 | ||
JP2004130300A JP4170950B2 (ja) | 2003-10-10 | 2004-04-26 | 光学デバイスおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1606159A CN1606159A (zh) | 2005-04-13 |
CN100352056C true CN100352056C (zh) | 2007-11-28 |
Family
ID=34315764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100849861A Expired - Fee Related CN100352056C (zh) | 2003-10-10 | 2004-10-09 | 光学器件及其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7485848B2 (zh) |
EP (1) | EP1523042A3 (zh) |
JP (1) | JP4170950B2 (zh) |
KR (1) | KR100583509B1 (zh) |
CN (1) | CN100352056C (zh) |
TW (1) | TWI254441B (zh) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005092255A1 (fr) | 2004-03-26 | 2005-10-06 | Shelyakov Alexander Vasilievic | Dispositif anatomique |
US7492023B2 (en) * | 2004-03-26 | 2009-02-17 | Fujifilm Corporation | Solid state imaging device |
KR100731123B1 (ko) * | 2005-12-28 | 2007-06-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
KR100731120B1 (ko) * | 2005-12-28 | 2007-06-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
SG139570A1 (en) * | 2006-07-13 | 2008-02-29 | Avago Technologies General Ip | A miniature composite assembly that incorporates multiple devices that use different wavelengths of light and a method for making the composite assembly |
US8204352B2 (en) * | 2007-11-29 | 2012-06-19 | Kyocera Corporation | Optical apparatus, sealing substrate, and method of manufacturing optical apparatus |
JP2011023595A (ja) * | 2009-07-16 | 2011-02-03 | Renesas Electronics Corp | 固定撮像素子 |
US8265487B2 (en) * | 2009-07-29 | 2012-09-11 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Half-duplex, single-fiber (S-F) optical transceiver module and method |
US8763877B2 (en) | 2010-09-30 | 2014-07-01 | Ethicon Endo-Surgery, Inc. | Surgical instruments with reconfigurable shaft segments |
JP5634380B2 (ja) | 2011-10-31 | 2014-12-03 | アオイ電子株式会社 | 受光装置およびその製造方法 |
US9716193B2 (en) * | 2012-05-02 | 2017-07-25 | Analog Devices, Inc. | Integrated optical sensor module |
JP6409575B2 (ja) * | 2013-01-30 | 2018-10-24 | パナソニック株式会社 | 積層型半導体装置 |
US10884551B2 (en) | 2013-05-16 | 2021-01-05 | Analog Devices, Inc. | Integrated gesture sensor module |
US9142695B2 (en) * | 2013-06-03 | 2015-09-22 | Optiz, Inc. | Sensor package with exposed sensor array and method of making same |
US9590129B2 (en) | 2014-11-19 | 2017-03-07 | Analog Devices Global | Optical sensor module |
KR102259146B1 (ko) | 2015-03-05 | 2021-06-01 | 동우 화인켐 주식회사 | 인듐 산화막의 식각액 조성물 및 이를 이용한 표시 기판의 제조 방법 |
JP6817321B2 (ja) * | 2015-11-13 | 2021-01-20 | ▲寧▼波舜宇光▲電▼信息有限公司 | カメラモジュール及びその電気支持体と組立方法 |
CN105611135B (zh) * | 2015-11-13 | 2019-03-19 | 宁波舜宇光电信息有限公司 | 系统级摄像模组及其电气支架和制造方法 |
CN109510932B (zh) * | 2016-02-18 | 2021-05-04 | 宁波舜宇光电信息有限公司 | 基于模塑工艺的摄像模组及其模塑线路板组件及制造方法 |
JP7015686B2 (ja) * | 2017-12-14 | 2022-02-03 | 旭化成エレクトロニクス株式会社 | 光デバイス及び光デバイスの製造方法 |
US10712197B2 (en) | 2018-01-11 | 2020-07-14 | Analog Devices Global Unlimited Company | Optical sensor package |
US20210321025A1 (en) * | 2018-08-21 | 2021-10-14 | Ningbo Sunny Opotech Co., Ltd. | Camera module and molded photosensitive assembly and manufacturing methods thereof, and electronic device |
WO2022118535A1 (ja) * | 2020-12-03 | 2022-06-09 | ソニーセミコンダクタソリューションズ株式会社 | 半導体モジュールおよびその製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US5489771A (en) * | 1993-10-15 | 1996-02-06 | University Of Virginia Patent Foundation | LED light standard for photo- and videomicroscopy |
US6331692B1 (en) * | 1996-10-12 | 2001-12-18 | Volker Krause | Diode laser, laser optics, device for laser treatment of a workpiece, process for a laser treatment of workpiece |
CN1345097A (zh) * | 2000-09-29 | 2002-04-17 | 欧姆龙株式会社 | 光元件用光学器件和用该光元件用光学器件的设备 |
CN1435926A (zh) * | 2002-02-01 | 2003-08-13 | 株式会社日立制作所 | 光学器件和光学头设备的安装方法 |
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US3648131A (en) * | 1969-11-07 | 1972-03-07 | Ibm | Hourglass-shaped conductive connection through semiconductor structures |
US5113466A (en) * | 1991-04-25 | 1992-05-12 | At&T Bell Laboratories | Molded optical packaging arrangement |
JP2843464B2 (ja) | 1992-09-01 | 1999-01-06 | シャープ株式会社 | 固体撮像装置 |
JP3412609B2 (ja) | 1992-10-22 | 2003-06-03 | 松下電器産業株式会社 | 半導体レーザ装置 |
US5406543A (en) * | 1993-04-07 | 1995-04-11 | Olympus Optical Co., Ltd. | Optical head with semiconductor laser |
DE69408558T2 (de) * | 1993-05-28 | 1998-07-23 | Toshiba Kawasaki Kk | Verwendung einer anisotropischen leitfähigen Schicht für die Verbindung von Anschlussleitern einer Leiterplatte mit den elektrischen Anschlusskontakten einer photoelektrischen Umwandlungsvorrichtung und Verfahren zur Montage dieser Vorrichtung |
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JP3239640B2 (ja) | 1994-10-04 | 2001-12-17 | ソニー株式会社 | 半導体装置の製造方法および半導体装置 |
JP3318811B2 (ja) * | 1994-12-29 | 2002-08-26 | ソニー株式会社 | 半導体発光素子のパッケージ及びその製造方法 |
DE19549818B4 (de) * | 1995-09-29 | 2010-03-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiter-Bauelement |
US6795120B2 (en) * | 1996-05-17 | 2004-09-21 | Sony Corporation | Solid-state imaging apparatus and camera using the same |
KR100500919B1 (ko) * | 1997-02-10 | 2005-07-14 | 마츠시타 덴끼 산교 가부시키가이샤 | 수지봉입형 반도체장치 및 그 제조방법 |
JP3443406B2 (ja) | 1997-02-10 | 2003-09-02 | 松下電器産業株式会社 | 樹脂封止型半導体装置 |
JP3447510B2 (ja) * | 1997-04-09 | 2003-09-16 | Necエレクトロニクス株式会社 | 固体撮像素子、その製造方法及び固体撮像装置 |
JPH11260996A (ja) | 1998-03-16 | 1999-09-24 | Matsushita Electron Corp | 光学半導体装置とその製造方法 |
WO2000008729A1 (en) * | 1998-08-05 | 2000-02-17 | Seiko Epson Corporation | Optical module and method of manufacture thereof |
JP4372241B2 (ja) | 1998-08-05 | 2009-11-25 | パナソニック株式会社 | 固体撮像装置の製造方法 |
TW526701B (en) * | 1999-08-26 | 2003-04-01 | Rohm Co Ltd | Electromagnetic shield cap and infrared data communication module |
JP2001077277A (ja) | 1999-09-03 | 2001-03-23 | Sony Corp | 半導体パッケージおよび半導体パッケージ製造方法 |
FR2800911B1 (fr) * | 1999-11-04 | 2003-08-22 | St Microelectronics Sa | Boitier semi-conducteur optique et procede de fabrication d'un tel boitier |
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TW441134B (en) * | 2000-03-06 | 2001-06-16 | Lin Hung Ming | Chip photosensor assembly |
TW454309B (en) | 2000-07-17 | 2001-09-11 | Orient Semiconductor Elect Ltd | Package structure of CCD image-capturing chip |
US6798031B2 (en) * | 2001-02-28 | 2004-09-28 | Fujitsu Limited | Semiconductor device and method for making the same |
TW548843B (en) | 2001-02-28 | 2003-08-21 | Fujitsu Ltd | Semiconductor device and method for making the same |
US20040012698A1 (en) * | 2001-03-05 | 2004-01-22 | Yasuo Suda | Image pickup model and image pickup device |
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JP4554152B2 (ja) * | 2002-12-19 | 2010-09-29 | 株式会社半導体エネルギー研究所 | 半導体チップの作製方法 |
-
2004
- 2004-04-26 JP JP2004130300A patent/JP4170950B2/ja not_active Expired - Fee Related
- 2004-10-06 US US10/958,296 patent/US7485848B2/en not_active Expired - Fee Related
- 2004-10-07 TW TW093130435A patent/TWI254441B/zh not_active IP Right Cessation
- 2004-10-08 EP EP04024092A patent/EP1523042A3/en not_active Withdrawn
- 2004-10-08 KR KR1020040080208A patent/KR100583509B1/ko not_active IP Right Cessation
- 2004-10-09 CN CNB2004100849861A patent/CN100352056C/zh not_active Expired - Fee Related
-
2008
- 2008-09-29 US US12/240,635 patent/US7755030B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5489771A (en) * | 1993-10-15 | 1996-02-06 | University Of Virginia Patent Foundation | LED light standard for photo- and videomicroscopy |
US6331692B1 (en) * | 1996-10-12 | 2001-12-18 | Volker Krause | Diode laser, laser optics, device for laser treatment of a workpiece, process for a laser treatment of workpiece |
CN1345097A (zh) * | 2000-09-29 | 2002-04-17 | 欧姆龙株式会社 | 光元件用光学器件和用该光元件用光学器件的设备 |
CN1435926A (zh) * | 2002-02-01 | 2003-08-13 | 株式会社日立制作所 | 光学器件和光学头设备的安装方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI254441B (en) | 2006-05-01 |
TW200514228A (en) | 2005-04-16 |
CN1606159A (zh) | 2005-04-13 |
KR20050035091A (ko) | 2005-04-15 |
KR100583509B1 (ko) | 2006-05-25 |
US20050077451A1 (en) | 2005-04-14 |
JP4170950B2 (ja) | 2008-10-22 |
EP1523042A2 (en) | 2005-04-13 |
US7755030B2 (en) | 2010-07-13 |
EP1523042A3 (en) | 2009-12-09 |
US7485848B2 (en) | 2009-02-03 |
US20090032684A1 (en) | 2009-02-05 |
JP2005136373A (ja) | 2005-05-26 |
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