TW201526153A - 具有經減少基板粒子產生的基板支持設備 - Google Patents

具有經減少基板粒子產生的基板支持設備 Download PDF

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TW201526153A
TW201526153A TW103142030A TW103142030A TW201526153A TW 201526153 A TW201526153 A TW 201526153A TW 103142030 A TW103142030 A TW 103142030A TW 103142030 A TW103142030 A TW 103142030A TW 201526153 A TW201526153 A TW 201526153A
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substrate
contact elements
support
support surface
lift pins
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TWI650831B (zh
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Pulkit Agarwal
Song-Moon Suh
Glen Mori
Steven V Sansoni
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J11/00—Manipulators not otherwise provided for
    • B25J11/0095—Manipulators transporting wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J15/00—Gripping heads and other end effectors
    • B25J15/0014—Gripping heads and other end effectors having fork, comb or plate shaped means for engaging the lower surface on a object to be transported
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

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Abstract

於此揭露用於支持基板之設備的實施例。在一些實施例中，用於支持一基板的設備包含：一支持表面；及複數個基板接觸元件，該等複數個基板接觸元件由該支持表面突出，其中該等複數個基板接觸元件由一材料形成，該材料具有小於或等於矽之硬度的一硬度，具有一低附著性，具有大到足以防止滑動的一靜磨擦係數，具有小於或等於10Ra的一表面粗糙度，且電性導電。

Description

具有經減少基板粒子產生的基板支持設備
本揭示案的實施例一般相關於半導體處理設施。
在半導體基板上的微電子生產中，半導體基板在製造處理期間被多次操縱於邊緣或背側上。此操縱可引發對附著至基板背側的污染，且在處理組件間移動，例如，由腔室至腔室、由晶圓傳送盒(FOUP)至晶圓傳送盒、或伴隨基板由處理工具至處理工具、或不同基板間，因此增加工具用於維護的停工時間以移除污染。此污染也可轉移至基板的前側，導致減低的裝置效能及/或良率損失。
此問題的典型解法為藉由減低基板及基板傳輸/操縱裝置間的接觸面積而減低背側之顆粒產生。然而，當此解法轉移顆粒產生，發明人觀察到：即便以最小接觸面積考量依然產生大量的顆粒。
因此，發明人提供用於支持及操縱帶有減低的顆粒產生之基板的改進設備之實施例。
於此揭露用於支持基板之設備的實施例。在一些實 施例中，用於支持一基板的設備包含：一支持表面；及複數個基板接觸元件，該等複數個基板接觸元件由該支持表面突出，其中該等複數個基板接觸元件由一材料形成，該材料具有小於或等於矽之硬度的一硬度，具有一低附著性，具有大到足以防止滑動的一靜磨擦係數，具有小於或等於10Ra的一表面粗糙度，且電性導電。
在一些實施例中，用於支持一基板的設備包含：一 支持表面；及複數個基板接觸元件，該等複數個基板接觸元件由該支持表面突出且經排列以支持一基板，其中該等複數個基板接觸元件由一材料形成，該材料具有小於或等於矽之硬度的一硬度、大到足以防止滑動的一靜磨擦係數及小於或等於10Ra的一表面粗糙度，其中該等複數個基板接觸元件電性導電，且其中該材料包括一電性導電塑膠、氧化鋁、氮化矽或不鏽鋼之其中一個或更多個。
在一些實施例中，基板處理系統包含：一基板支持， 該基板支持設置於一處理腔室中，該基板支持具有一基板支持表面及複數個升降銷，該等複數個升降銷經排列以在相對於該基板支持被升高時支持該基板支持表面上方的一基板；及一基板傳輸機器人，該基板傳輸機器人包含一支持表面及複數個接觸元件，該等複數個接觸元件經排列以在被設置於該基板傳輸機器人上時支持該基板；其中該基板支持表面、該等複數個接觸元件、或該等複數個升降銷之其中至少一者由一材料形成，該材料具有小於或等於矽之硬度的一硬度， 具有低附著性，具有大到足以防止滑動的一靜磨擦係數，具有小於或等於10Ra的一表面粗糙度，且電性導電。
描述本揭示案之其他及進一步實施例於下。
100‧‧‧基板支持
110‧‧‧支持底座
120‧‧‧接觸元件
130‧‧‧支持軸件
200‧‧‧基板支持
210‧‧‧支持底座
220‧‧‧升降銷
230‧‧‧孔
240‧‧‧上方部分
300‧‧‧基板傳輸機器人
302‧‧‧葉片
304‧‧‧臂
306‧‧‧第一端
308‧‧‧第一連桿
310‧‧‧第二連桿
312‧‧‧軸
314‧‧‧第二端
316‧‧‧腕部
350‧‧‧基板
410‧‧‧接觸墊
502‧‧‧上方部分
504‧‧‧上方部分
本揭示案之實施例(簡短總結如上且於下方以更細節討論)，可藉由參考描述於所附圖式中的本揭示案之圖示的實施例而理解。然而，注意所附圖式僅圖示本揭示案之典型的實施例，因此不考慮限制其範圍，因為本揭示案可允許其他等效實施例。
第1圖根據本揭示案的一些實施例描述基板支持的一示意側視圖。
第2圖根據本揭示案的一些實施例描述基板支持的一示意側視圖。
第3圖根據本揭示案的一些實施例描述用於傳輸安置於基板支持的升降銷上的基板之基板傳輸機器人。
第4圖根據本揭示案的一些實施例描述基板傳輸機器人的末端效應器之平面視圖。
第5圖根據本揭示案的一些實施例描述基板傳輸機器人葉片之一部分的剖視圖。
為了便於理解，盡可能使用相同元件符號，以標示圖式中常見的相同元件。圖式並未照尺寸大小繪製且可針對清晰而簡化。思量一個實施例的元件及特徵可有利地併入其他實施例中，而無須進一步敘述。
本揭示案之實施例提供改進的基板支持及操縱設 備，該操縱設備提供相較於傳統基板支持設備而言減低的顆粒產生。本揭示案之實施例可在製造處理期間有利地避免或減低累積於基板上的污染，例如在處理步驟間操縱基板時，及/或在支持處理腔室內的基板時，而可進一步限制或防止污染到達基板前側，且引發裝置效能問題及/或良率損失。可使用本揭示案之實施例於多樣的表面中，該等表面在利用非常低的顆粒增加的處理中(例如，於顯示處理、矽晶圓處理、及光學製造中)接觸基板。
第1圖根據本揭示案的一些實施例描述基板支持 100，基板支持100上放置了欲處理基板。基板支持100可包含任何類型的支持如，例如，台座、真空吸座，諸如此類。 基板支持100可包含支持底座110、複數個接觸元件120及支持軸件130。基板支持100典型地設置於處理腔室(未展示)內，且基板(未展示)被放置於基板支持上以處理。在處理期間，基板的背側藉由接觸元件120支持。基板支持100可包含用於微電子裝置生產的基板支持中常可找到的額外元件，例如非限制範例之加熱及/或冷卻元件、RF及/或DC電極、背側氣體供應，諸如此類。這些額外元件為了簡化描述而未展示。
第2圖根據本揭示案的一些實施例描述基板支持 200。基板支持200實質與基板支持100相似，除了：基板支持200包含支持底座210中的複數個穿孔230穿過升降銷220延伸處。例如，欲處理基板(未展示)初始被放置於升降銷220 上，升降銷220延伸穿過孔230超出支持底座210。在基板被放置於延伸的升降銷220後，升降銷220被收起使得基板被放置於支持底座210上。如同基板支持100，基板支持200可被配置為，例如，台座、真空吸座、靜電吸座，諸如此類。 基板支持200也可包含支持底座210的上方表面上的複數個接觸元件120。
第3圖根據本揭示案的一些實施例圖示基板傳輸機 器人300。例如，基板傳輸機器人300可包括用於在第一端306處的垂直及旋轉位移之機器人手臂(臂304)。臂304可包括一個或更多個連桿，例如在軸312處釘在一起的第一連桿308及第二連桿310。臂304的第二端314可包含腕部316，葉片302的第一端耦合至腕部316。葉片302可包含接觸墊410，有關於第4圖在下方描述。
第4圖根據本揭示案的一些實施例描述展示接觸墊 410的圖示配置的葉片302之俯視視圖。雖然在第4圖中以特定配置描述三個接觸墊410，也可使用適於支持基板而具有相同或不同數量之接觸墊的其他配置。
在操作中，可操作基板傳輸機器人300使得葉片302 位於基板350的下方，基板350受支持於複數個升降銷220上。經由基板傳輸機器人300及臂304之機械操縱，葉片302由基板350下方的位置升起，以將接觸墊410帶入與基板350的背側接觸以傳輸基板350離開升降銷220。在進行時，基板傳輸機器人300經由臂304及葉片302將基板由速度零加速至傳輸速度。該加速導致對應接觸墊410的位置的接觸面積 處的一力量F，如第5圖中所圖示。結果，在接觸墊410及基板350間的接觸面積處產生顆粒。此相似地發生在任何接觸基板350的物體處如，例如，升降銷220及接觸元件120。
發明人發現：當任何接觸基板的元件之材料較基板 材料(例如，矽)硬、具有對基板材料之高附著性、不能防止基板滑動、具有粗糙表面、且非導電時會產生顆粒。例如，若基板初始地被由黏性材料所形成的元件所接觸，且隨後被另一由堅硬材料所形成的元件所接觸，則惡化基板上的顆粒產生。相似地，若基板及導電材料間有電流且該基板被非導電材料升高，可發生電弧，因此惡化基板上的顆粒產生。
因此，發明人發現：可藉由使用一材料防止或實質 最小化顆粒的產生，該材料展示接觸基板之元件中事先決定的特性組。該事先決定的特性組包含：小於或等於欲支持基板硬度的硬度(例如，矽)、非附著性、高至足以防止基板於接觸該基板之元件上滑動的靜磨擦係數、電性導電、及小於或等於10Ra的表面粗糙度。這樣的材料可包含，例如：氧化鋁、氮化矽、不鏽鋼及電性導電塑膠，例如kapton®、kalrez®、vespel®及celazole®。也可使用其他展示上方關注特性的處理可相容材料。在一些實施例中，接觸基板的元件可整體地由該材料形成。在一些實施例中，接觸基板的元件可由該材料形成於至少部分的接觸基板的元件。例如，升降銷220的接觸基板之上方部分240可由該材料形成，而下方部分可由另一可或不可展示上方關注特性之處理可相容材料形成。在一些實施例中，可在所有接觸基板的元件中使用相同材料。選擇地， 可在多種接觸基板的元件中使用各自展示上方關注特性之不同材料。
參考第5圖，在一些實施例中，基板傳輸機器人300 的各接觸墊410可整體地由該材料形成。在一些實施例中，各接觸墊410的上方部分502可由該材料形成，且下方部分504可由不同材料形成，該不同材料不必展示上方討論之相同特性。
因此，於此揭露用於避免基板上產生顆粒的改進的 設備及材料。發明的設備可有利地在製造處理期間允許累積於基板上的污染之減低或防止，例如在處理步驟間操縱基板期間及支持處理腔室內的基板，因此防止或減低到達基板前側之污染發生而引發減低的裝置效能及/或良率損失。
前述係本揭示案之實施例，可修改本揭示案之其他及進一步的實施例而不遠離其基本範圍。
100‧‧‧基板支持
110‧‧‧支持底座
120‧‧‧接觸元件
130‧‧‧支持軸件
302‧‧‧葉片
410‧‧‧接觸墊
502‧‧‧上方部分
504‧‧‧上方部分

Claims (20)

  1. 一種用於支持一基板的設備，包括：一支持表面；及複數個基板接觸元件，該等複數個基板接觸元件由該支持表面突出，其中該等複數個基板接觸元件由一材料形成，該材料具有小於或等於矽之一硬度的一硬度，具有一低附著性，具有大到足以防止滑動的一靜磨擦係數，具有小於或等於10Ra的一表面粗糙度，且電性導電。
  2. 如請求項1所述之設備，其中該支持表面為一基板支持的一部分，且該等複數個接觸元件由該基板支持突出。
  3. 如請求項1所述之設備，其中該支持表面為一基板支持的一部分，且該等複數個接觸元件包含設置於該基板支持中的複數個升降銷。
  4. 如請求項3所述之設備，其中該等複數個升降銷之每一者的一上方部分由該材料形成。
  5. 如請求項3所述之設備，其中該等複數個升降銷之每一者整體地由該材料形成。
  6. 如請求項1所述之設備，其中該支持表面為一基板傳輸機器人的一部分，且該等複數個接觸元件包含設置於該基板 傳輸機器人之一末端效應器上的接觸墊。
  7. 如請求項1至6之任一者所述之設備，其中該材料為一電性導電塑膠。
  8. 如請求項1至6之任一者所述之設備，其中該材料包括氧化鋁、氮化矽或不鏽鋼之其中一個或更多個。
  9. 一種用於支持一基板的設備，包括：一支持表面；及複數個基板接觸元件，該等複數個基板接觸元件由該支持表面突出且經排列以支持一基板，其中該等複數個基板接觸元件由一材料形成，該材料具有小於或等於矽之一硬度的一硬度、大到足以防止滑動的一靜磨擦係數及小於或等於10Ra的一表面粗糙度，其中該等複數個基板接觸元件電性導電，且其中該材料包括一電性導電塑膠、氧化鋁、氮化矽或不鏽鋼之其中一個或更多個。
  10. 如請求項9所述之設備，其中該支持表面為一基板支持的一部分，且該等複數個接觸元件由該基板支持突出。
  11. 如請求項9所述之設備，其中該支持表面為一基板支持的一部分，且該等複數個接觸元件包含設置於該基板支持中的複數個升降銷。
  12. 如請求項11所述之設備，其中該等複數個升降銷之每一者的一上方部分由該材料形成。
  13. 如請求項11所述之設備，其中該等複數個升降銷之每一者整體地由該材料形成。
  14. 如請求項9所述之設備，其中該支持表面為一基板傳輸機器人的一部分，且該等複數個接觸元件包含設置於該基板傳輸機器人之一末端效應器上的接觸墊。
  15. 一種基板處理系統，包括：一基板支持，該基板支持設置於一處理腔室中，該基板支持具有一基板支持表面及複數個升降銷，該等複數個升降銷經排列以在相對於該基板支持被升高時支持該基板支持表面上方的一基板；及一基板傳輸機器人，該基板傳輸機器人包含一支持表面及複數個接觸元件，該等複數個接觸元件經排列以在被設置於該基板傳輸機器人上時支持該基板；其中該基板支持表面、該等複數個接觸元件、或該等複數個升降銷之其中至少一者由一材料形成，該材料具有小於或等於矽之一硬度的一硬度，具有低附著性，具有大到足以防止滑動的一靜磨擦係數，具有小於或等於10Ra的一表面粗糙度，且電性導電。
  16. 如請求項15所述之基板處理系統，其中該等複數個升降銷之每一者的一上方部分由該材料形成。
  17. 如請求項15所述之基板處理系統，其中該等複數個升降銷之每一者整體地由該材料形成。
  18. 如請求項15所述之基板處理系統，其中該基板支持進一步包含複數個突起狀接觸元件，該等複數個突起狀接觸元件由該基板支持延伸以支持該基板。。
  19. 如請求項15至18之任一者所述之基板處理系統，其中該材料包含一電性導電塑膠。
  20. 如請求項15至18之任一者所述之基板處理系統，其中該材料包括氧化鋁、氮化矽或不鏽鋼之其中一個或更多個。
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