CN105723504A - 具有减少的基板颗粒产生的基板支撑设备 - Google Patents

具有减少的基板颗粒产生的基板支撑设备 Download PDF

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CN105723504A
CN105723504A CN201480062960.9A CN201480062960A CN105723504A CN 105723504 A CN105723504 A CN 105723504A CN 201480062960 A CN201480062960 A CN 201480062960A CN 105723504 A CN105723504 A CN 105723504A
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substrate
contact element
equipment
substrate support
support
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默尼卡·阿咖瓦
徐松文
格伦·莫里
史蒂芬·V·桑索尼
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J11/00—Manipulators not otherwise provided for
    • B25J11/0095—Manipulators transporting wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J15/00—Gripping heads and other end effectors
    • B25J15/0014—Gripping heads and other end effectors having fork, comb or plate shaped means for engaging the lower surface on a object to be transported
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

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Abstract

于此披露了用于支撑基板的设备的实施方式。在一些实施方式中，用于支撑基板的设备包括：支撑表面；和多个基板接触元件，所述多个基板接触元件从所述支撑表面突出，其中所述多个基板接触元件由一材料形成，所述材料具有小于或等于硅的硬度的硬度，具有低附着性，具有大到足以防止滑动的静磨擦系数，具有小于或等于10Ra的表面粗糙度，且为导电性的。

Description

具有减少的基板颗粒产生的基板支撑设备
技术领域
本公开内容的实施方式大体涉及半导体处理装备。
背景技术
在半导体基板上的微电子装置的生产中，半导体基板在制造处理期间被多次操纵于边缘或背侧上。此操纵可导致污染物附着至基板的背侧，以及伴随基板的处理部件之间的移动，例如，由腔室至腔室、由前开式晶片盒(frontopeningunifiedpod,FOUP)至前开式晶片盒、或由处理工具至处理工具、或不同基板之间的移动，因此增加工具用于维护的停工时间以移除污染物。这些污染物也可转移至基板的前侧，导致降低的装置性能和/或产量损失。
此问题的典型解决方法为通过减小基板与基板传送/操纵装置之间的接触面积而减少背侧的颗粒产生。然而，尽管这种解决方法减轻了颗粒产生，但发明人观察到：即便以最小接触面积考虑，依然产生大量的颗粒。
因此，发明人提供具有减少的颗粒产生的用于支撑和操纵基板的改进设备的实施方式。
发明内容
于此披露用于支撑基板的设备的实施方式。在一些实施方式中，用于支撑基板的设备包括：支撑表面；和多个基板接触元件，所述多个基板接触元件从所述支撑表面突出，其中所述多个基板接触元件由一材料形成，所述材料具有小于或等于硅的硬度的硬度，具有低附着性，具有大到足以防止滑动的静磨擦系数，具有小于或等于10Ra的表面粗糙度，且为导电性的。
在一些实施方式中，用于支撑基板的设备包括：支撑表面；和多个基板接触元件，所述多个基板接触元件从所述支撑表面突出且被布置成支撑基板，其中所述多个基板接触元件由一材料形成，所述材料具有小于或等于硅的硬度的硬度、大到足以防止滑动的静磨擦系数及小于或等于10Ra的表面粗糙度，其中所述多个基板接触元件是导电性的，且其中所述材料包括导电塑料、氧化铝、氮化硅或不锈钢之一或更多者。
在一些实施方式中，基板处理系统包括：基板支撑件，所述基板支撑件设置于处理腔室中，所述基板支撑件具有基板支撑表面和多个升降销，所述多个升降销被布置成在相对于所述基板支撑件被升高时支撑所述基板支撑表面上方的基板；和基板传送机械手(robot)，所述基板传送机械手包括支撑表面和多个接触元件，所述多个接触元件被布置成在被设置于所述基板传送机械手上时支撑所述基板；其中所述基板支撑表面、所述多个接触元件、或所述多个升降销中的至少一者由一材料形成，所述材料具有小于或等于硅的硬度的一硬度，具有低附着性，具有大到足以防止滑动的静磨擦系数，具有小于或等于10Ra的表面粗糙度，且为导电性的。
本公开内容的其他和进一步的实施方式描述于下。
附图说明
可通过参照描述于附图中的本公开内容的说明性实施方式来理解以上简要概述的且于下文更详细地讨论的本公开内容的实施方式。然而，注意附图仅图示本公开内容的典型的实施方式，因此不应被视为限制其范围，因为本公开内容可允许其他等效的实施方式。
图1描绘根据本公开内容的一些实施方式的基板支撑件的示意性侧视图。
图2描绘根据本公开内容的一些实施方式的基板支撑件的示意性侧视图。
图3描绘根据本公开内容的一些实施方式的用于传送安置于基板支撑件的升降销上的基板的基板传送机械手。
图4描绘根据本公开内容的一些实施方式的基板传送机械手的末端效应器(endeffector)的平面图。
图5描绘根据本公开内容的一些实施方式的基板传送机械手叶片的一部分的剖视图。
为了便于理解，尽可能使用相同元件符号来标示各图中共有的相同元件。各图并未照尺寸大小绘制且可为了清晰而简化。预期一个实施方式的元件及特征可有利地并入其他实施方式中，而无需进一步叙述。
具体实施方式
本公开内容的实施方式提供改进的基板支撑和操纵设备，所述基板支撑和操纵设备提供相较于传统的基板支撑设备而言减少的颗粒产生。本公开内容的实施方式可在制造处理期间有利地避免或减少累积于基板上的污染物，诸如在处理步骤之间操纵基板时，和/或在支撑处理腔室内的基板时，同时能够进一步限制或防止污染物到达基板前侧，并进一步限制或防止污染物导致装置性能问题和/或产量损失。可使用本公开内容的实施方式于多样的表面中，所述表面在利用非常低的颗粒增加的处理中(例如，于显示处理、硅晶片处理和光学制造中)接触基板。
图1描绘根据本公开内容的一些实施方式的基板支撑件100，基板支撑件100上放置有待处理的基板。基板支撑件100可包括任何类型的支撑件，诸如，例如，基座、真空夹具(vacuumchuck)或类似者。基板支撑件100可包括支撑底座110、多个接触元件120和支撑轴130。基板支撑件100典型地设置于处理腔室(未示出)内，且基板(未示出)被放置于基板支撑上以进行处理。在处理期间，基板的背侧由接触元件120支撑。基板支撑件100可包括用于微电子装置生产的基板支撑件中常可找到的额外元件，诸如非限制性示例的加热和/或冷却元件、RF和/或DC电极、背侧气体供应或类似者。为了简化描述，未示出这些额外元件。
图2描绘根据本公开内容的一些实施方式的基板支撑件200。基板支撑件200实质与基板支撑件100相似，不同之处在于：基板支撑件200包括支撑底座210中的多个通孔230，升降销220延伸穿过通孔230。例如，待处理的基板(未示出)初始被放置于升降销220上，升降销220延伸穿过孔230超出支撑底座210。在基板被放置于延伸的升降销220上后，升降销220缩回使得基板被放置于支撑底座210上。如同基板支撑件100，基板支撑件200可被配置为，例如，基座、真空夹具、静电夹具或类似者。基板支撑件200也可包括位于支撑底座210的上表面上的多个接触元件120。
图3图示根据本公开内容的一些实施方式的基板传送机械手300。例如，基板传送机械手300可包括用于在第一端306处的垂直和旋转位移的机械手手臂(臂304)。臂304可包括一个或更多个连杆(link)，例如在轴312处钉在一起的第一连杆308和第二连杆310。臂304的第二端314可包括腕部316，叶片302的第一端耦接至腕部316。叶片302可包括接触垫410，参照图4在下文描述。
图4描绘叶片302的俯视图，示出了根据本公开内容的一些实施方式的接触垫410的说明性配置。虽然在图4中以特定配置描绘了三个接触垫410，但是也可使用适于支撑基板而具有相同或不同数量的接触垫的其他配置。
在操作中，可操作基板传送机械手300使得叶片302位于基板350的下方，基板350受支撑于多个升降销220上。经由基板传送机械手300和臂304的机械操纵，叶片302由基板350下方的位置升起，以将接触垫410带入与基板350的背侧接触以传送基板350离开升降销220。在进行时，基板传送机械手300经由臂304和叶片302将基板由速度零加速至传送速度。该加速导致对应于接触垫410的位置的接触区域处的力F，如图5中所示。结果，在接触垫410与基板350之间的接触区域处产生颗粒。此相似地发生在任何接触基板350的物体处，诸如，例如，升降销220和接触元件120。
发明人发现：当任何接触基板的元件的材料较基板材料(例如，硅)硬、对基板材料具有高附着性、不能防止基板滑动、具有粗糙表面且非导电时会产生颗粒。例如，若基板初始地与由粘性材料所形成的元件所接触，且随后与另一由坚硬材料所形成的元件所接触，则加剧了基板上的颗粒产生。相似地，若基板与导电材料之间有电流且该基板被非导电材料升高，可发生电弧，因此加剧基板上的颗粒产生。
因此，发明人发现：可通过使用一材料防止或实质最小化颗粒的产生，所述材料展示出接触基板的元件中预先确定的特性集合。所述预先确定的特性集合包括：小于或等于待支撑基板(例如，硅)硬度的硬度、非附着性、高至足以防止基板于接触该基板的元件上滑动的静磨擦系数、导电性的、及小于或等于10Ra的表面粗糙度。这样的材料可包括，例如：氧化铝、氮化硅、不锈钢和导电塑料，诸如及也可使用其他展示出上面提到的特性的处理兼容的材料。在一些实施方式中，接触基板的元件可整体地由所述材料形成。在一些实施方式中，接触基板的元件可由所述材料形成接触基板的元件的至少一些部分。例如，升降销220的接触基板的上部240可由所述材料形成，而下部可以由另一可展示出或可不展示出上面提到的特性的处理兼容的材料形成。在一些实施方式中，可在接触基板的所有元件中使用相同材料。或者，可在接触基板的多种元件中使用各自展示出上面提到的特性的不同材料。
参照图5，在一些实施方式中，基板传送机械手300的各个接触垫410可整体地由所述材料形成。在一些实施方式中，各个接触垫410的上部502可由所述材料形成，且下部504可由不同材料形成，所述不同材料不必展示出上方讨论的相同特性。
因此，于此披露了用于避免在基板上产生颗粒的改进的设备和材料。本发明的设备可有利地在制造处理期间允许减少或防止污染物累积于基板上，诸如在处理步骤之间操纵基板期间和支撑处理腔室内的基板时，从而防止或减少污染物到达基板前侧并导致装置性能降低和/或产量损失的发生。
尽管前述涉及本公开内容的实施方式，但可在不背离本公开内容的基本范围的情况下，设计出本公开内容的其他和进一步的实施方式。

Claims (14)

1.一种用于支撑基板的设备，包括：
支撑表面；和
多个基板接触元件，所述多个基板接触元件从所述支撑表面突出，其中所述多个基板接触元件由一材料形成，所述材料具有小于或等于硅的硬度的硬度，具有低附着性，具有大到足以防止滑动的静磨擦系数，具有小于或等于10Ra的表面粗糙度，且为导电性的。
2.如权利要求1所述的设备，其中所述支撑表面为基板支撑件的一部分，且所述多个接触元件从所述基板支撑件突出。
3.如权利要求1所述的设备，其中所述支撑表面为基板支撑件的一部分，且所述多个接触元件包括设置于所述基板支撑件中的多个升降销。
4.如权利要求3所述的设备，其中所述多个升降销的每一者的上部由所述材料形成。
5.如权利要求3所述的设备，其中所述多个升降销的每一者整体地由所述材料形成。
6.如权利要求1所述的设备，其中所述支撑表面为基板传送机械手的一部分，且所述多个接触元件包括设置于所述基板传送机械手的末端效应器上的接触垫。
7.如权利要求1至6中任一项所述的设备，其中所述材料为导电塑料。
8.如权利要求1至6中任一项所述的设备，其中所述材料包括氧化铝、氮化硅或不锈钢之一或更多者。
9.一种基板处理系统，包括：
基板支撑件，所述基板支撑件设置于处理腔室中，所述基板支撑件具有基板支撑表面和多个升降销，所述多个升降销被布置成在相对于所述基板支撑件被升高时支撑所述基板支撑表面上方的基板；和
基板传送机械手，所述基板传送机械手包括支撑表面和多个接触元件，所述多个接触元件被布置成在被设置于所述基板传送机械手上时支撑所述基板；
其中所述基板支撑表面、所述多个接触元件、或所述多个升降销中的至少一者由一材料形成，所述材料具有小于或等于硅的硬度的硬度，具有低附着性，具有大到足以防止滑动的静磨擦系数，具有小于或等于10Ra的表面粗糙度，且为导电性的。
10.如权利要求9所述的基板处理系统，其中所述多个升降销的每一者的上部由所述材料形成。
11.如权利要求9所述的基板处理系统，其中所述多个升降销的每一者整体地由所述材料形成。
12.如权利要求9所述的基板处理系统，其中所述基板支撑件进一步包括多个突起状接触元件，所述多个突起状接触元件从所述基板支撑件延伸以支撑所述基板。
13.如权利要求9至12中任一项所述的基板处理系统，其中所述材料包括导电塑料。
14.如权利要求9至12中任一项所述的基板处理系统，其中所述材料包括氧化铝、氮化硅或不锈钢之一或更多者。
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