TW201312820A - 有機發光裝置及方法 - Google Patents
有機發光裝置及方法 Download PDFInfo
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- TW201312820A TW201312820A TW101124079A TW101124079A TW201312820A TW 201312820 A TW201312820 A TW 201312820A TW 101124079 A TW101124079 A TW 101124079A TW 101124079 A TW101124079 A TW 101124079A TW 201312820 A TW201312820 A TW 201312820A
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- light
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- luminescent
- emitting
- organic light
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C25/00—Compounds containing at least one halogen atom bound to a six-membered aromatic ring
- C07C25/18—Polycyclic aromatic halogenated hydrocarbons
- C07C25/22—Polycyclic aromatic halogenated hydrocarbons with condensed rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/02—Boron compounds
- C07F5/025—Boronic and borinic acid compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
-
- C—CHEMISTRY; METALLURGY
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Abstract
本發明係關於一種有機發光裝置,其包含第一電極、第二電極及介於該第一電極與該第二電極之間之第一、第二及第三發光層,其中該第二發光層佈置於該第一發光層與該第三發光層之間且具有至少10nm之厚度。
Description
本發明係關於有機發光裝置及其製造方法。
包含活性有機材料之電子裝置由於在諸如以下等裝置中之用途正吸引愈來愈多的關注:有機發光二極體(OLED)、有機光響應裝置(具體而言有機光伏打裝置及有機光感測器)、有機電晶體及記憶體陣列裝置。包含有機材料之裝置提供多種益處,例如低重量、低電力消耗及撓性。另外,使用可溶性有機材料容許在裝置製造中使用溶液處理,例如噴墨印刷或旋塗。
OLED可包含基板,其攜載陽極、陰極及一或多個陽極與陰極之間之有機發光層。
在裝置之操作期間,電洞經由陽極注入裝置且電子經由陰極注入。發光材料之最高佔據分子軌域(HOMO)中之電洞與最低未佔據分子軌域(LUMO)中之電子組合以形成以光形式釋放能量之激子。
適宜發光材料包括小分子、聚合及樹枝狀材料。適宜發光聚合物包括聚(伸芳基伸乙烯基)(例如聚(對-伸苯基伸乙烯基))及聚伸芳基(例如聚茀)。
發光層可包含半導體主體材料及發光摻雜劑,其中能量自主體材料轉移至發光摻雜劑。舉例而言,J.Appl.Phys.65,3610,1989揭示摻雜有螢光發光摻雜劑之主體材料(亦即,經由單重態激子之衰變發射光之發光材料)且Appl.
Phys.Lett.,2000,77,904揭示摻雜有磷光發光摻雜劑之主體材料(亦即,經由三重態激子之衰變發射光之發光材料)。
來自一個以上OLED層之發射、具體而言以達成白髮光之發射揭示於(例如)WO 2008/131750、DE 102007020644及EP1390962及SPIE(2004),5519,42-47中。
在第一態樣中,本發明提供有機發光裝置,其包含第一電極、第二電極及介於第一電極與第二電極之間之第一、第二及第三發光層,其中第二發光層佈置於第一發光層與第三發光層之間且厚度為至少10 nm。
視情況,第二發光層之厚度不超過40 nm,視情況不超過30 nm。
視情況,第一電極係陽極;第二電極係陰極;第一發光層佈置於陽極與第二發光層之間;且第三發光層佈置於陰極與第二發光層之間。
視情況,第一發光層包含第一磷光發光摻雜劑,視情況綠磷光發光摻雜劑。
視情況,第一發光層包含與第一磷光發光摻雜劑摻和或與其共價結合之第一主體材料。
視情況,第二發光層包含第二磷光發光摻雜劑,視情況具有比第一磷光發光摻雜劑長之峰發射波長的摻雜劑,視情況紅磷光發光摻雜劑。
視情況,第二發光層包含與第二磷光發光摻雜劑摻和或
與其共價結合之第二主體材料。
視情況,第三發光層包含螢光發光材料,視情況螢光藍發光材料。
視情況,第一及第二主體材料具有比螢光發光材料高之三重態能階。
視情況,螢光藍發光材料係聚合物。
視情況,螢光發光材料具有比第一磷光發光摻雜劑之三重激發態能階低之三重激發態能階。
視情況,第一磷光摻雜劑之三重激發態能階比第二磷光摻雜劑之三重激發態能階高。
視情況,第二磷光發光摻雜劑相對於第二發光層之其他組份係以不超過1 mol%之量存在。
視情況,裝置發射白光。
在第二態樣中,本發明提供形成第一態樣之有機發光裝置的方法,該方法包含以下步驟:在第一電極上沈積第一發光層;在第一發光層上沈積第二發光層;在第二發光層沈積第三發光層;及在第三發光層上沈積陰極。
視情況根據第二態樣,第一、第二及第三發光層中之至少一者係藉由包含以下步驟之溶液處理方法形成:沈積包含溶劑及發光層之一或多種組份的組合物及蒸發溶劑。
視情況根據第二態樣,在藉由溶液處理方法形成第二發光層之前使第一發光層交聯。
視情況根據第二態樣,在藉由溶液處理方法形成第三發光層之前使第二發光層交聯。
在第三態樣中,本發明提供調諧有機發光裝置之發射顏色之方法,該有機發光裝置包含第一電極、第二電極及介於第一電極與第二電極之間之第一及第二發光層,該方法包含以下步驟:選擇OLED之發射之靶標顏色範圍;確定一或多個發光層之厚度以獲得所選顏色範圍內之OLED發射顏色;及形成具有所選一或多個發光層厚度之OLED。
視情況根據第三態樣,OLED包含第三發光層。
視情況根據第三態樣,OLED係白髮光OLED且顏色範圍選自多個顏色再現指數值、多個CIE(x)及CIE(y)值及多個黑體發射體發射體之溫度。
藉由本發明之第三態樣之方法形成之OLED可包含關於本發明之第一態樣所述之OLED之特徵中之任一者;且可使用參照本發明之第二態樣所述之方法步驟中之任一者來形成。
現將參照附圖更詳細地闡述本發明。
未按任何比例繪示之圖1示意性闡釋本發明實施例之OLED。OLED攜載於基板107上且包含陽極101、陰極105及介於陽極與陰極之間之三個發光層103G、103R及103B。發光層103G包含主體及綠磷光發光摻雜劑,發光層103R包含主體及紅磷光發光摻雜劑,且發光層103B包含藍螢光發光材料。
在操作中,自陽極注射之電洞及自陰極注射之電子組合於至少第一發光層103G及第三發光層103B中以形成激
子。第三發光層103B中形成之單重態激子可自藍發光材料之單重態激發態S1E直接表變以提供藍光hvB。
參照圖2,層103G中形成之三重態激子可自主體之三重激發態能階T1GH轉移至綠摻雜劑之較低三重激發態能階T1G。此轉移藉由介於T1GH與T1G之間之虛線闡釋於圖2中。三重態激子隨後可經歷輻射衰變以產生綠磷光。發光層103G可進一步提供有一種以上發光摻雜劑(例如綠磷光摻雜劑)及亦具有比T1G低之三重激發態之又一摻雜劑(例如紅磷光摻雜劑)。
來自層103R之光發射可藉由類似於上文參照來自層103G之發射所述之機制的機制發生。除電洞及電子重組以在發光層103R中形成激子以外或作為其替代,三重態激子可自層103G及/或層103B遷移至其可由紅磷光摻雜劑吸收之層103R中。
自該三個層中之每一者發射之光可組合以提供白光。白光可具有於2500 K至9000 K範圍中之溫度下等效於由黑體發射之CIE x坐標的CIE x坐標及由黑體發射之該光之CIE y坐標之0.05或0.025內的CIE y坐標,視情況於2700 K至4500 K範圍中之溫度下等效於由黑體發射之CIE x坐標的CIE x坐標。
未按任何比例繪示之圖2示意性闡釋圖1之裝置之層103G、103R及103B的能階。
層103B之藍螢光材料之三重態能階T1B比紅磷光摻雜劑之三重態能階T1R高,或最多比T1R低0.2 eV或0.1 eV,以至
少部分防止紅磷光被藍螢光材料猝滅。此外,該等相對能階可允許層103B中產生之三重態激子被紅磷光摻雜劑吸收並發生輻射衰變。
三重態激子可具有相對較長壽命,且因此層103G中產生之三重態激子可經由層103R遷移至層103B中,在層103R中具有較低濃度之紅磷光摻雜劑下此更有可能發生,在層103B中該等激子可由具有比T1G低之三重激發態T1B的藍螢光材料猝滅。因此,層103R之厚度為至少10 nm,此可防止層103G中產生之至少一些三重態激子經由層103R遷移並到達層103B。
層103R之主體材料具有三重態能階T1RH,T1RH比綠磷光摻雜劑之三重態能階T1G低不小於0.1eV、且視情況與T1G相同或比其高,能階以至少部分防止綠磷光因三重態激子自T1G轉移至T1RH而猝滅。此外,對於具有與T1G相同或比其高(例如比T1G高至少kT)之T1RH能階之層103R使用主體材料可引起層103G中產生之三重態激子限制於該層。一些三重態激子仍可由層103R之紅光發射摻雜劑吸收,然而,層103R之紅光發射摻雜劑所提供之量可足夠高至產生紅光發射但足夠低至至少部分避免層103G之綠磷光被紅光發射摻雜劑猝滅。紅光發射摻雜劑所提供之量相對於此層之其他組份可小於2.5 mol%、小於2 mol%、小於1 mol%、小於0.5 mol%或小於0.25 mol%。紅光發射摻雜劑所提供之量可在0.1 mol%至1 mol%範圍內。
已假定可由激子-激子相互作用(例如形成高能量「超激
發」態之三重態-三重態相互作用)引起OLED之降格。然而,層103G及103R二者中存在磷光摻雜劑會為三重態激子提供輻射衰變路徑,此可至少部分避免該等三重態-三重態相互作用。
可選擇層103R、103G及103B中之一或多者之厚度以獲得OLED之選擇顏色輸出,例如選擇顏色再現指數(CRI)或選擇CIE(x)及CIE(y)坐標。該等層厚度可藉由改變由OLED之堆疊界定之腔影響整體OLED顏色,以便增加由OLED發射之一種顏色之光相對於由OLED發射之所有顏色光的比例。此外,調節層厚度可藉由將該層之部分或全部移動至裝置之重組區中引起一個層發射較大比例之光。舉例而言,即使未改變綠光發射體發射體與其他發射體發射體之比率,增加層103G之厚度亦可藉由將更多綠色層移動至重組區中而增加裝置之綠光發射。因此,可不僅藉由發射體發射體之選擇、且亦藉由OLED層之厚度調諧由OLED發射之顏色。
可藉由適當選擇主體及/或摻雜劑來選擇層103G、103R及103B之組份之最高佔據分子軌域(HOMO)能階,以使自陽極注入之電洞可有效地到達發光層103B。同樣,可選擇該等組份之最低未佔據分子軌域(LUMO)能階,以使自陰極注入之電子可有效地到達發光層103G。
層103R之主體及/或摻雜劑之HOMO能階比層103G及/或層103B之HOMO能階深(進一步偏離真空能階)視情況不超過0.5 eV,視情況不超過0.3 eV。此可至少部分防止在層
103R處捕獲電洞。
層103R之主體及/或摻雜劑之LUMO能階比層103G及/或層103B之LUMO能階淺(更接近真空能階)視情況不超過1.0 eV,視情況不超過0.5 eV,視情況不超過0.3 eV。此可至少部分防止在層103R處捕獲電子。
可藉由(例如)循環伏安法量測HOMO及LUMO能階。
例示性藍螢光材料視情況具有小於或等於480 nm、例如在400 nm至480 nm範圍內之峰光致發光波長。
藍螢光材料可為任何形式之材料,包括小分子、聚合及樹枝狀材料。藍螢光聚合物材料包括具有部分共軛、完全共軛或非共軛聚合物主鏈之材料。
例示性藍發射體發射體係至少部分共軛聚合發射體發射體,其包含視情況經取代之伸(雜)芳基重複單元,例如視情況經取代之茀、伸苯基及/或茚并茀重複單元及/或(雜)芳基胺重複單元。
例示性藍發射體發射體包含至少50 mol%茀重複單元及高達50 mol%、高達30 mol%或高達15 mol%(雜)芳基胺重複單元。
例示性(雜)芳基胺重複單元包括式(V)之重複單元:
其中Ar1及Ar2在每次出現時獨立地選自視情況經取代之芳基或雜芳基,n大於或等於1,較佳地1或2,R係H或取代基,較佳地取代基,且x及y各自獨立地係1、2或3。
R較佳地係烷基(例如C1-20烷基)、Ar3或Ar3基團之分支鏈或直鏈(例如-(Ar3)r),其中Ar3在每次出現時獨立地選自芳基或雜芳基,且r至少為1,視情況為1、2或3)。
Ar1、Ar2及Ar3中之任一者可獨立地經一或多個取代基取代。較佳取代基選自由以下組成之基團R3:烷基(例如C1-20烷基),其中一或多個非毗鄰C原子可由O、S、經取代之N、C=O及-COO-替代,且烷基之一或多個H原子可由F或視情況經一或多個基團R4取代之芳基或雜芳基替代,視情況經一或多個基團R4取代之芳基或雜芳基,NR5 2、OR5、SR5,氟、硝基及氰基;其中每一R4皆獨立地係烷基(例如C1-20烷基),其中一或多個非毗鄰C原子可由O、S、經取代之N、C=O及-COO-替代,且烷基之一或多個H原子可由F替代,且每一R5皆獨立地選自由烷基及視情況經一或多個烷基取代之芳基或雜芳基組成之群。
R可包含可交聯基團,例如包含可聚合雙鍵之基團(例如乙烯基或丙烯酸酯基團)或苯并環丁烷基團。
式(V)之重複單元中之芳基或雜芳基中之任一者可由直接鍵或二價連接原子或基團連接。較佳二價連接原子及基
團包括O、S;經取代之N;及經取代之C。
若存在,則R3、R4或二價連接基團之經取代之N或經取代之C在每次出現時可分別獨立地係NR6或CR6 2,其中R6係烷基或視情況經取代之芳基或雜芳基。芳基或雜芳基R6之可選取代基可選自R4或R5。
在一個較佳配置中,R係Ar3,且Ar1、Ar2及Ar3中之每一者皆獨立地且視情況經一或多個C1-20烷基取代。
符合式1之尤佳單元包括式1-3之單元:
其中Ar1及Ar2係如上文所定義;且Ar3係視情況經取代之芳基或雜芳基。若存在,則Ar3之較佳取代基包括如針對Ar1及Ar2所述之取代基,具體而言烷基及烷氧基。
Ar1、Ar2及Ar3較佳係苯基,其每一者皆可獨立地經一或多個如上文所述之取代基取代。
在另一較佳配置中,式(V)之芳基或雜芳基係苯基,每一苯基皆視情況經一或多個烷基取代。
在另一較佳配置中,Ar1、Ar2及Ar3係苯基,其每一者皆可經一或多個C1-20烷基取代,且r=1。
在另一較佳配置中,Ar1及Ar2係苯基,其每一者皆可經
一或多個C1-20烷基取代,且R係3,5-二苯基苯,其中每一苯基皆可經一或多個烷基取代。
例示性茀重複單元包括式IV之重複單元:
其中R1及R2獨立地係H或取代基,且其中R1及R2可經連接以形成環。
R1及R2視情況選自由以下組成之基團:氫;視情況經取代之Ar3或Ar3基團之直鏈或分支鏈,其中Ar3係如上文所述;及視情況經取代之烷基(例如C1-20烷基),其中烷基之一或多個非毗鄰C原子可由O、S、經取代之N、C=O及-COO-替代。
在R1或R2包含烷基之情形下,烷基之可選取代基包括F、CN、硝基以及視情況經一或多個基團R4取代之芳基或雜芳基,其中R4係如上文所述。
在R1或R2包含芳基或雜芳基之情形下,每一芳基或雜芳基皆可獨立地經取代。芳基或雜芳基之較佳可選取代基包括一或多個取代基R3。
除取代基R1及R2以外,茀單元之可選取代基較佳選自由以下組成之群:烷基,其中一或多個非毗鄰C原子可由O、S、經取代之N、C=O及-COO-替代;視情況經取代之芳基;視情況經取代之雜芳基;氟;氰基及硝基。
若存在,則式(IV)之重複單元中之經取代之N可在每次出現時獨立地為NR5或NR6。
在一個較佳配置中,R1及R2中之至少一者包含視情況經取代之C1-C20烷基;或視情況經取代之芳基,具體而言經一或多個C1-20烷基取代之苯基。
磷光發光摻雜劑包括金屬錯合物,其包含視情況經取代之式(II)錯合物:ML1 qL2 rL3 s(II)其中M係金屬;L1、L2及L3之每一者皆係配位基團;q係整數;r及s各自獨立地係0或整數;且(a.q)+(b.r)+(c.s)之和等於M上可用的配位位點數,其中a係L1上之配位位點數,b係L2上之配位位點數且c係L3上之配位位點數。
重元素M誘導強自旋軌道偶合,以允許快速系統間跨越及自三重態或更高態之發射(磷光)。適宜重金屬M包括d區金屬,具體而言彼等在第2列及第3列中者,即元素39至48及72至80,具體而言係釕、銠、鈀、錸、鋨、銥、鉑及金。銥尤佳。
f區金屬之適宜配位基團包括氧或氮供體系統,例如羧酸、1,3-二酮酸鹽、羥基羧酸、希夫鹼(Schiff base,包括醯基苯酚及亞胺基醯基)。如所知,發光鑭金屬錯合物需要敏化基團,其具有比金屬離子之第一激發態高之三重激
發態能階。發射係來自金屬之f-f過渡且因此由金屬之選擇確定發射顏色。尖銳發射通常較窄,從而產生用於顯示器應用之純色發射。
d區金屬尤其適於自三重激發態之發射。該等金屬與碳或氮供體(例如卟啉或式(III)二齒配體)形成有機金屬錯合物:
其中Ar4及Ar5可相同或不同且獨立地選自視情況經取代之芳基或雜芳基;X1及Y1可相同或不同且獨立地選自碳或氮;且Ar4及Ar5可稠和在一起。X1係碳且Y1係氮之配體尤佳。
二齒配體之實例如下所示:
Ar4及Ar5中之每一者皆可攜載一或多個取代基。該等取代基之兩者或更多者可連接以形成環,例如芳香族環。尤佳取代基包括氟或三氟甲基,其可用於使錯合物之發射藍移,如WO 02/45466、WO 02/44189、US 2002-117662及US 2002-182441中所揭示;烷基或烷氧基,如JP 2002-
324679中所揭示;咔唑,其在使用錯合物作為發射材料時可用於有助於電洞傳輸至該至錯合物,如WO 02/81448中所揭示;溴、氯或碘,其可用於官能化配體以便附接其他基團,如WO 02/68435及EP 1245659中所揭示;及樹枝狀基團(dendron),其可用於獲得或增強金屬錯合物之溶液可處理性,如WO 02/6655中所揭示。
樹枝狀基團可具有視情況經取代之式(VIII)
其中BP代表附接至核心之分支點,且G1代表第一代分支基團。
樹枝狀基團可係第一代、第二代、第三代或更高代樹枝狀基團。G1可經兩個或更多個第二代分支基團G2等取代,如在視情況經取代之式(VIIIa)中:
其中u係0或1;若u係0,則v係0,或若u係1,則v可係0或1;BP代表附接至核心之分支點,且G1、G2及G3代表第一代、第二代及第三代樹枝狀基團分支基團。
較佳地,每一基團G選自由芳基及雜芳基組成之群。較佳地,G基團之至少一些或全部係視情況經取代之苯基。
BP及/或任一基團G可經一或多個取代基(例如一或多個C1-20烷基或烷氧基)取代。
發光樹枝狀聚合物通常包含結合至一或多個樹枝狀基團之發光核心,其中每一樹枝狀基團皆包含分支點及兩個或更多個樹枝狀分支。較佳地,樹枝狀基團至少部分地共軛,且核心及樹枝狀分枝中之至少一者包含芳基或雜芳基。
適用於d區元素之其他配體包括二酮酸鹽,具體而言乙醯丙酮酸鹽(acac);三芳基膦及吡啶,其每一者皆可經取代。
綠發射摻雜劑可視情況具有在490 nm至560 nm範圍內具有峰之光致發光譜。
例示性綠發射體發射體係視情況經取代之叁-苯基吡啶銥(III)。
紅發射摻雜劑可視情況在其光致發光發射譜中於約570 nm至630 nm處具有峰。
例示性紅發射體發射體係叁-苯基吡啶銥(III),其中每一吡啶配體經1,3-二苯基三嗪取代。
主體可為激發態能階比與其一起使用之摻雜劑之激發態
能階高的任何材料。較佳地,主體與摻雜劑激發態能階之間之能隙係至少kT,以避免激子自摻雜劑反向轉移至主體材料。主體材料視情況可經溶液處理。
可使用其他磷光摻雜劑,例如波長在540 nm至600 nm範圍內之摻雜劑。
用於層103R及103G之主體材料可相同或不同。若其相同,則應瞭解,主體材料具有比紅及綠磷光摻雜劑二者之三重態能階高的三重態能階。
適於綠或紅磷光摻雜劑之主體包括視情況經取代之二芳基三嗪或三芳基三嗪。含三嗪之主體材料更詳細闡述於WO 2008/025997中且包括(例如)視情況經取代之三苯基三嗪。苯基之可選取代基包括一或多個烷基,例如C1-20烷基。主體可為包含三嗪重複單元、具體而言經由一個芳基作為側基附接之視情況經取代之二-或三-芳基三嗪重複單元或經由兩個芳基附接於聚合物主鏈中之重複單元的聚合物。包含三嗪重複單元之主體聚合物可包含選自以下之其他重複單元:伸(雜)芳基共重複單元,例如如上文所述苯基、茀或茚并茀重複單元,其中該等伸(雜)芳基重複單元中之每一者皆可視情況經一或多個取代基(例如烷基或烷氧基)取代。一類共重複單元係如上文所述式(IV)之茀重複單元。
主體聚合物之例示性三嗪重複單元具有式(VI):
其中Ar1、Ar2及Ar3係如上文參照式(V)所述,且可各自獨立地經一或多個參照Ar1、Ar2及Ar3所述之取代基取代,且z在每次出現時獨立地至少為1,視情況1、2或3。較佳地,式(VI)之Ar1及Ar2及Ar3各自係苯基,每一苯基視情況且獨立地經一或多個C1-20烷基取代。
包含芳香族重複單元之主體聚合物可形成芳香族單元之共軛鏈。此共軛可藉由在聚合物主鏈中納入適宜重複單元(例如在聚合物主鏈中形成扭轉之重複單元及破壞共軛之重複單元)來中斷或降低。
可在聚合物主鏈中引起扭轉(例如,藉由位阻)之重複單元之實例係經一或多個基團(例如一或多個烷基或烷氧基,例如C1-20烷基或烷氧基)取代之1,4-伸苯基,具體而言2,5-二取代之-1,4-伸苯基重複單元。
一類可破壞共軛之重複單元包括經由非共軛位置連接至毗鄰重複單元之伸芳基或伸雜芳基重複單元。此類例示性單元包括1,2-伸苯基重複單元及1,3-伸苯基重複單元(其各自可視情況經一或多個取代基(例如一或多個如上文所述取代基R1,具體而言一或多個烷基或烷氧基,例如C1-20烷基或烷氧基)取代)、以及經由2位及/或6位連接之茀重複單元,其可再次視情況經一或多個取代基(例如一或多個如上文所述取代基R1)取代。
例示性伸苯基重複單元具有式(VII):
其中R1係如上文參照式(IV)所述且p係1、2、3或4,視情況1或2。
另一類可破壞共軛之重複單元包括具有式-Ar-Sp-Ar-之重複單元,其中每一Ar係視情況經取代之芳基或雜芳基且Sp係間隔原子或在兩個Ar基團之間包含至少一個非共軛原子之鏈。例示性Ar基團包括視情況經取代之苯基。可選取代基可為一或多個如上文所述取代基R1,具體而言一或多個烷基或烷氧基,例如C1-20烷基或烷氧基。例示性基團Sp包括式-(CH2)m-之基團,其中m至少為1,例如介於1至10之間之整數,且其中每一H可獨立地由取代基(例如烷基)替代,且其中一或多個碳原子可由雜原子(例如O或S)替代。
主體聚合物之例示性重複單元可包括以下中之一或多者:(i)伸(雜)芳基共重複單元,例如如上文所述苯基、茀或茚并茀重複單元,其各自可視情況為如上文所述經取代之(具體而言)式(IV)之茀重複單元及/或伸苯基重複單元;(ii)視情況經取代之芳基胺重複單元,具體而言如上文所述式(V)之重複單元;及/或(iii)視情況經取代之三嗪重複單元,具體而言如上文所述式(VI)之重複單元。
具體而言,若欲在發光層上沈積又一層(例如又一發光層),則該每一發光層可交聯。
可物理混合主體及發光摻雜劑。或者,發光摻雜劑可化學結合至主體。在聚合物主體之情形下,發光摻雜劑可以附接至聚合物主鏈之取代基形式化學結合,作為聚合物主鏈中之重複單元納入或作為聚合物之端基提供,如(例如)EP 1245659、WO 02/31896、WO 03/18653及WO 03/22908中所揭示。
藉由在發光摻雜劑上提供能夠與主體聚合物反應之反應基團以與該聚合物形成共價鍵,發光摻雜劑可以主體聚合物之側鏈或端基形式附接。
可藉由提供具有兩個可反應聚合基團之發光摻雜劑將發光摻雜劑提供於主體聚合物之主鏈中,該等可反應聚合基團能夠經歷與用於形成聚合物之其他單體之反應基團的聚合。在包含式(III)之一或多種配體之金屬錯合物發光摻雜劑的情形下,可提供一或多個反應基團作為Ar4及/或Ar5中之一或多者上之取代基。在另一配置中,Ar4及/或Ar5可經取代,例如經苯基取代,且取代基可繼而經一或多個結合至主體聚合物或聚合成主體聚合物主鏈的反應基團取代。
此結合可使激子自主體聚合物更有效轉移至發光摻雜劑,此乃因其可提供相應混合系統不可用之分子內激子轉移路徑。
此外,出於處理原因,結合可為有利的。舉例而言,若發光摻雜劑具有低溶解性,則將其結合至可溶性聚合物可允許藉由電荷傳輸材料在溶液中攜載發光摻雜劑,從而使得使用溶液處理技術進行裝置製造。此外,將發光摻雜劑結合至聚合物可防止溶液處理之裝置中可對裝置性能有害
之相分離效應。
層103R及103G中可使用一種以上發光摻雜劑。
可在陽極與發光層之間提供電洞傳輸層。同樣,可在陰極與發光層之間提供電子傳輸層。
類似地,可在陽極與發光層之間提供電子阻擋層且可在陰極與發光層之間提供電洞阻擋層。傳輸層及阻擋層可組合使用。端視單一層之HOMO及LUMO能階,其可既傳輸電洞及電子中之一者,又阻擋電洞及電子中之另一者。
若存在,則位於陽極與發光層之間之電洞傳輸層較佳具有小於或等於5.5 eV、更佳約4.8 eV至5.5 eV之HOMO能階。可選擇電洞傳輸層之HOMO能階以便在毗鄰層(例如發光層)之0.2 eV內,視情況0.1 eV內,以提供該等層之間之電洞傳輸之較小障壁。
若存在,則位於發光層與陰極之間之電子傳輸層較佳具有約3 eV至3.5 eV之LUMO能階。舉例而言,可在最接近陰極之發光層與陰極之間提供厚度在0.2 nm至2 nm範圍內之一氧化矽或二氧化矽之層或其他薄介電層。可藉由循環伏安法量測HOMO及LUMO能階。
電洞傳輸層可含有電洞傳輸(雜)芳基胺,例如包含式(V)之電洞傳輸重複單元的均聚物或共聚物。例示性共聚物包含式(V)之重複單元及視情況經取代之伸(雜)芳基共重複單元,例如如上文所述苯基、茀或茚并茀重複單元,其中該等伸(雜)芳基重複單元中之每一者可視情況經一或多個取
代基(例如烷基或烷氧基)取代。特定共重複單元包括如上文所述式(IV)之茀重複單元及視情況經取代之伸苯基重複單元。
具體而言若電洞傳輸層係藉由自存於溶劑中之溶液沈積電洞傳輸材料而形成,則電洞傳輸層可交聯。舉例而言,包含式(V)之重複單元、視情況與一或多個伸芳基共重複單元之聚合物可在伸芳基重複單元及式(V)之重複單元中之一或多者上提供有可交聯取代基。
同樣,電子傳輸層可含有包含視情況經取代之伸芳基重複單元之鏈(例如茀重複單元之鏈)的聚合物。
製備共軛聚合物(例如包含上述式(IV)及/或(V)之重複單元的聚合物)之較佳方法包含「金屬插入」,其中金屬錯合物觸媒之金屬原子插在芳基或雜芳基與單體之離去基團之間。例示性金屬插入方法係如(例如)WO 00/53656中所述之Suzuki聚合及如(例如)T.Yamamoto,「Electrically Conducting And Thermally Stable-Conjugated Poly(arylene)s Prepared by Organometallic Processes」,Progress in Polymer Science 1993,17,1153-1205中所述之Yamamoto聚合。在Yamamoto聚合之情形下,使用鎳錯合物觸媒;在Suzuki聚合之情形下,使用鈀錯合物觸媒。
舉例而言,在藉由Yamamoto聚合之直鏈聚合物的合成中,使用具有兩個反應性鹵素基團之單體。類似地,根據Suzuki聚合之方法,至少一個反應基團係硼衍生基團,例
如酉朋酸或酉朋酸酯,且另一反應基團係鹵素。較佳鹵素係氯、溴及碘,最佳為溴。
因此,應瞭解,貫穿本申請案闡釋之重複單元可衍生自攜載適宜離去基團之單體。同樣,端基或側基可藉由適宜離去基團之反應結合至聚合物。
Suzuki聚合可用於製備立體規則、嵌段及隨機共聚物。具體而言,在一個反應基團係鹵素且另一反應基團係硼衍生基團時,可製備均聚物或隨機共聚物。或者,在第一單體之兩個反應基團均係硼且第二單體之兩個反應基團均係鹵素時,可製備嵌段或立體規則共聚物。
作為鹵化物之替代物,能夠參與金屬插入之其他離去基團包括磺酸及磺酸酯,例如甲苯磺酸酯、甲磺酸酯及三氟甲磺酸酯。
可在陽極與發光層之間提供可自導電有機或無機材料形成之導電電洞注入層,以有助於電洞自陽極注入一或多個半導體聚合物層。電洞傳輸層可與電洞注入層組合使用。
摻雜有機電洞注入材料之實例包括視情況經取代之摻雜聚(乙烯二氧噻吩)(PEDT),具體而言摻雜有電荷平衡聚酸(例如如EP 0901176及EP 0947123中揭示之聚磺苯乙烯(PSS)、聚丙烯酸或氟化磺酸,例如Nafion ®)之PEDT;聚苯胺,如US 5723873及US 5798170中揭示;及視情況經取代之聚噻吩或聚(噻吩并噻吩)。導電無機材料之實例包括過渡金屬氧化物,例如VOx、MoOx及RuOx,如Journal of
Physics D:Applied Physics(1996),29(11),2750-2753中所揭示。
陰極選自具有允許電子注入發光層之功函數的材料。其他因素影響陰極之選擇,例如陰極與發光材料之間之不利相互作用的可能性。陰極可由諸如鋁層等單一材料組成。或者,其可包含複數種金屬,例如,低功函數材料及高功函數材料(例如鈣及鋁)之雙層,如WO 98/10621中所揭示;元素鋇,如WO 98/57381、Appl.Phys.Lett.2002,81(4),634及WO 02/84759中所揭示;或有助於電子注入之金屬化合物(具體而言鹼金屬或鹼土金屬之氧化物或氟化物)之薄層,例如氟化鋰,如WO 00/48258中所揭示;氟化鋇,如Appl.Phys.Lett.2001,79(5),2001中所揭示;及氧化鋇。為將電子有效注入裝置中,陰極之功函數較佳地低於3.5 eV,更佳地低於3.2 eV,最佳地低於3 eV。金屬之功函數可參見(例如)Michaelson,J.Appl.Phys.48(11),4729,1977。
陰極可不透明或透明。透明陰極對於主動式矩陣裝置尤其有利,此乃因該等裝置中穿過透明陽極之發射至少部分地受到位於發射像素下方之驅動電路的阻擋。透明陰極包含足夠薄以透明之電子注入材料層。通常,此層之橫向導電率將因其較薄而較低。在此情形下,電子注入材料層與較厚透明導電材料層(例如氧化銦錫)組合使用。
應瞭解,透明陰極裝置無需具有透明陽極(當然,除非
期望完全透明之裝置),且因此可用諸如鋁層等反射材料層替代或補充用於底部發射裝置之透明陽極。透明陰極裝置之實例揭示於(例如)GB 2348316中。
有機光電子裝置往往對水分及氧敏感。因此,基板較佳具有防止水分及氧侵入裝置之良好障壁性質。基板通常係玻璃,然而,可使用替代基板,具體而言裝置之撓性係合意的。舉例而言,基板可包含如US 6268695(其揭示交替塑膠及障壁層或薄玻璃之壓層的基板)中之塑膠及如EP 0949850中揭示之塑膠。
裝置可經囊封劑(未顯示)囊封以防止水分及氧侵入。適宜囊封劑包括玻璃片;具有適宜障壁性質之膜,例如二氧化矽、一氧化矽、氮化矽或如(例如)WO 01/81649中所揭示之聚合物及電介質之交替堆疊;或如(例如)WO 01/19142中所揭示之氣密容器。在透明陰極裝置之情形下,透明囊封層(例如一氧化矽或二氧化矽)可沈積至微米厚度等級,但在一個較佳實施例中,該層之厚度在20 nm至300 nm範圍內。用於吸收可滲透穿過基板或囊封劑之任何大氣水分及/或氧之吸收劑材料可佈置於基板與囊封劑之間。
用於形成溶液處理用聚合物的組合物的適宜溶劑可包括許多常見有機溶劑,例如單烷基苯或多烷基苯,例如甲苯及二甲苯。
例示性溶液沈積技術包括印刷及塗佈技術,例如旋塗、浸塗、輥對輥塗佈或輥對輥印刷、刮刀塗佈、狹縫模具式塗佈、凹版印刷、絲網印刷及噴墨印刷。
塗佈方法(例如彼等上文所述者)尤其適於無需對電致發光材料實施圖案化之裝置,例如適於照明應用或簡單單色分段顯示器。
印刷尤其適於高資訊容量顯示器,具體而言全彩顯示器。可藉由在第一電極上提供圖案化層並界定用於印刷一種顏色(在單色裝置之情形下)或多種顏色(在多色、具體而言全彩裝置之情形下)之孔來對裝置實施噴墨印刷。圖案化層通常係經圖案化以界定孔之光阻劑層,如在(例如)EP 0880303中所述。
作為孔之替代物,可將油墨印刷至圖案化層內所界定之通道中。具體而言,可將光阻劑圖案化以形成通道,其與孔不同,在複數個像素上延伸,且通道末端可封閉或開放。
可使用多種方法以至少部分地避免在下伏有機層上之一或多個其他有機層之溶液沈積期間下伏有機層溶解。可藉由在又一層溶液沈積之前交聯使下伏有機層不可溶。可藉由在形成下伏層之材料上提供取代基(例如發光層之主體及/或摻雜劑材料上的交聯取代基)提供交聯。或者或另外,用於形成下伏層之組合物中可包括可交聯添加劑。或者或另外,可自包含下伏有機層於其中不可溶之溶劑的溶液形成又一層。
如本文所述OLED可用於多種應用中,包括(但不限於)用作顯示器背光燈(例如LCD背光燈)、區域照明及顯示器。白髮光OLED可包含均勻發射層。用於顯示器中之OLED可包含一或多個圖案化發射層及/或圖案化電極以提供個別顯示器像素。
在玻璃基板上形成具有以下結構之有機發光裝置:ITO/HIL(50 nm)/HTL(21 nm)/ELG(31 nm)/ELR(10 nm)/ELB(49 nm)/陰極
其中ITO係氧化銦錫陽極;HIL係自Plextronics公司購得之電洞注入材料層,HTL係電洞傳輸層;ELG係包括綠磷光發光材料之發光層;ELR係紅磷光發光層;ELB係藍螢光發光層;且陰極係包含金屬氟化物、鋁及銀之三層的陰極。
HIL、HTL、ELG、ELR及ELB各自係藉由旋塗包含該層之組份及溶劑之溶液並蒸發溶劑形成。HTL、ELG及ELR包含在旋塗覆蓋層之前交聯之可交聯基團。
HTL係藉由旋塗電洞傳輸聚合物1形成,該聚合物係如WO 00/53656中所述藉由以下單體之Suzuki聚合形成:
ELG係藉由旋塗聚合物形成,該聚合物係如WO 00/53656中所述藉由以下莫耳百分比之單體與紅磷光封端單元的Suzuki聚合形成:
ELG包括綠磷光重複單元及紅磷光封端基團二者。
ELR係藉由旋塗紅聚合物1形成,該聚合物係如WO 00/53656中所述藉由以下莫耳百分比之單體與紅磷光封端單元的Suzuki聚合形成:
ELB係藉由旋塗藍聚合物1形成,該聚合物係如WO 00/53656中所述藉由以下莫耳百分比之單體的Suzuki聚合形成:
該裝置係如關於實例1所述製造,只是形成厚度為15 nm之層ELR。
該裝置係如關於實例1所述製造,只是形成厚度為20 nm之層ELR。
該裝置係如關於實例1所述製造,只是形成厚度為40 nm之層ELR。
該裝置係如關於實例1所述製造,只是形成厚度為5 nm之層ELR。
參照下表1,可看到,外部量子效率(EQE)在10 nm或10 nm以上之厚度下較高。此外,以流明/瓦特量測之效率在10 nm以上之厚度下較高,但於較高厚度下驅動壓力有較小增加。
不希望受限於任何理論,據信增加層ELR之厚度可降低
綠磷光層中產生之三重態激子被藍螢光層之材料猝滅的可能性。
裝置係如關於實例1所述製造,只是用非發射比較聚合物1替代發射層ELR之紅聚合物1,該非發射比較聚合物不存在紅磷光發射體發射體以提供非發射層。
裝置係如關於實例1所述製造,只是紅磷光材料係如下文所闡釋之紅聚合物2。
裝置係如關於實例1所述製造,只是紅磷光材料係如下文所闡釋之紅聚合物3。
用於形成裝置實例1、比較裝置2及裝置實例5之裝置中的ELR的聚合物之組成示於下表2中。
根據1000 cd/m2之起始光度量測裝置之壽命,即於恆定電流下裝置之光度衰變50%所花費之時間。
含有發光層ELR之裝置實例5之裝置的壽命係發射層ELR經非發射層替代之比較裝置2的3倍。裝置實例5之發光層ELR的壽命係比較裝置2之5倍。
不希望受限於任何理論,據信介於ELG與ELB之間之層中存在磷光摻雜劑為此層中之三重態激子提供輻射衰變的路徑(藉由自ELG或ELB之激子遷移或藉由此層中之電洞及電子之重組),由此降低與此層不包含磷光摻雜劑之裝置相比的三重態-三重態相互作用的可能性。來自此層之紅發射可有助於自OLED之整個白光發射。
如參照裝置實例1所述製備具有以下結構之裝置:ITO/HIL(16 nm)/HTL(22 nm)/ELG(30 nm)/ELR(20 nm)/ELB(51 nm)/陰極
其中:HTL係藉由旋塗電洞傳輸聚合物1形成;ELG係藉由旋塗聚合物形成之綠發光層,該聚合物係如WO 00/53656中所述藉由以下單體之Suzuki聚合形成:
ELR係藉由旋塗聚合物形成之紅發光層,該聚合物係如WO 00/53656中所述藉由以下單體及紅磷光封端基團之Suzuki聚合形成:
ELB係藉由旋塗聚合物形成之藍發光層,該聚合物係如WO 00/53656中所述藉由以下單體之Suzuki聚合形成:
裝置產生具有CIE坐標(0.476,0.419)之白光。裝置下降至1000 cd/m2之起始光度之70%所花費之時間係706小時。裝置具有11.47%之外部量子效率。
根據裝置實例1中所述之方法在玻璃基板上形成具有以下結構之有機發光裝置:ITO/HIL(15 nm)/HTL(23 nm)/ELG(29 nm)/ELR(21 nm)/ELB(51 nm)/陰極
HTL係如裝置實例1中所述藉由旋塗電洞傳輸聚合物1形成。
ELG係如裝置實例1中所述藉由旋塗用於形成ELG之聚合
物形成。
ELB係如裝置實例1中所述藉由旋塗藍聚合物1形成。
ELR係藉由旋塗含有紅聚合物1之重複單元之紅聚合物形成,但紅磷光封端材料之量有所改變,如表3中所述(藉由2,7-二溴-9,9-二(3-己基苯基)茀單體之量之相應減少提供增加量之封端材料)。
裝置之性能闡述於表4及5中。表4中之數據係於1,000 cd/m2之亮度下。表5中之數據係於2,000 cd/m2之起始亮度下。
如表5中所示,增加紅磷光材料之濃度會延長裝置之壽命。不希望受限於任何理論,據信該等實例中之紅發射體發射體之濃度為紅光發射層中之激子提供輻射衰變路徑,而不足夠高至引起自毗鄰層ELG之綠磷光顯著猝滅。
儘管已根據具體例示性實施例闡述了本發明,但應瞭解,彼等熟習此項技術者將可明瞭本文中所揭示特徵之各種修改、改變及/或組合,而不背離如以下申請專利範圍中所述之本發明範圍。
101‧‧‧陽極
103G‧‧‧發光層
103R‧‧‧發光層
103B‧‧‧發光層
105‧‧‧陰極
107‧‧‧基板
圖1示意性闡釋本發明實施例之OLED;且圖2闡釋圖1之OLED的能階。
101‧‧‧陽極
103G‧‧‧發光層
103R‧‧‧發光層
103B‧‧‧發光層
105‧‧‧陰極
107‧‧‧基板
Claims (22)
- 一種有機發光裝置,其包含第一電極、第二電極及介於該第一電極與該第二電極之間之第一、第二及第三發光層,其中該第二發光層佈置於該第一發光層與該第三發光層之間且具有至少10 nm之厚度。
- 如請求項1之有機發光裝置,其中該第二發光層具有不超過40 nm、視情況不超過30 nm之厚度。
- 如請求項1或2之有機發光裝置,其中該第一電極係陽極;該第二電極係陰極;該第一發光層佈置於該陽極與該第二發光層之間;且該第三發光層佈置於該陰極與該第二發光層之間。
- 如任一前述請求項之有機發光裝置,其中該第一發光層包含第一磷光發光摻雜劑,視情況綠磷光發光摻雜劑。
- 如請求項4之有機發光裝置,其中該第一發光層包含與該第一磷光發光摻雜劑摻和或共價結合至該第一磷光發光摻雜劑之第一主體材料。
- 如任一前述請求項之有機發光裝置,其中該第二發光層包含第二磷光發光摻雜劑,視情況具有比該第一磷光發光摻雜劑長之峰發射波長的摻雜劑,視情況紅磷光發光摻雜劑。
- 如請求項6之有機發光裝置,其中該第二發光層包含與該第二磷光發光摻雜劑摻和或共價結合之第二主體材料。
- 如任一前述請求項之有機發光裝置,其中該第三發光層 包含螢光發光材料,視情況螢光藍發光材料。
- 如請求項4至8之有機發光裝置,其中該等第一及第二主體材料具有比該螢光發光材料高之三重態能階。
- 如請求項8或9之有機發光裝置,其中該螢光藍發光材料係聚合物。
- 如請求項4及8之有機發光裝置,其中該螢光發光材料具有比該第一磷光發光摻雜劑之三重激發態能階低之三重激發態能階。
- 如請求項4及6之有機發光裝置,其中該第一磷光摻雜劑之該三重激發態能階比該第二磷光摻雜劑高。
- 如請求項6至11中任一項之有機發光裝置,其中該第二磷光發光摻雜劑係以相對於該第二發光層之其他組份不超過1 mol%之量存在。
- 如任一前述請求項之有機發光裝置,其中該裝置發射白光。
- 一種形成如任一前述請求項之有機發光裝置的方法,其包含以下步驟:在第一電極上沈積第一發光層;在該第一發光層上沈積第二發光層;在該第二發光層上沈積第三發光層;及在該第三發光層上沈積陰極。
- 如請求項15之方法,其中該等第一、第二及第三發光層中之至少一者係藉由包含以下步驟之溶液處理方法形成:沈積包含溶劑及該發光層之該(等)組份的組合物及蒸發該溶劑。
- 如請求項16之方法,其中在藉由該溶液處理方法形成該 第二發光層之前使該第一發光層交聯。
- 如請求項16或17之方法,其中在藉由該溶液處理方法形成該第三發光層之前使該第二發光層交聯。
- 一種調諧有機發光裝置之發射顏色之方法,該有機發光裝置包含第一電極、第二電極及介於該第一電極與該第二電極之間之第一及第二發光層,該方法包含以下步驟:選擇該OLED之發射之靶標顏色範圍;確定該一或多個發光層之厚度以獲得該所選顏色範圍內之OLED發射顏色;及形成具有該(等)所選發光層厚度之該OLED。
- 如請求項19之方法,其中該OLED包含第三發光層。
- 如請求項19或20之方法,其中該OLED係白髮光OLED且該顏色範圍選自多個顏色再現指數值、多個CIE(x)及CIE(y)值及多個黑體發射體發射體之溫度。
- 一種有機發光裝置,其包含第一電極;該第一電極上之綠發光層;該綠發光層上之紅發光層;該綠發光層上之藍發光層;及該藍發光層上之陰極。
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CN103748132A (zh) | 2014-04-23 |
US9493613B2 (en) | 2016-11-15 |
TW201307426A (zh) | 2013-02-16 |
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US20170098770A1 (en) | 2017-04-06 |
US20140217379A1 (en) | 2014-08-07 |
TWI625344B (zh) | 2018-06-01 |
GB201322587D0 (en) | 2014-02-05 |
US9562136B2 (en) | 2017-02-07 |
JP6038134B2 (ja) | 2016-12-07 |
WO2013005029A1 (en) | 2013-01-10 |
WO2013005031A1 (en) | 2013-01-10 |
GB2505834A (en) | 2014-03-12 |
KR101986859B1 (ko) | 2019-06-07 |
WO2013005026A3 (en) | 2013-04-18 |
TW201305315A (zh) | 2013-02-01 |
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