TW201026879A - Methods for forming silicon nitride based film or silicon carbon based film - Google Patents

Methods for forming silicon nitride based film or silicon carbon based film Download PDF

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TW201026879A
TW201026879A TW098132302A TW98132302A TW201026879A TW 201026879 A TW201026879 A TW 201026879A TW 098132302 A TW098132302 A TW 098132302A TW 98132302 A TW98132302 A TW 98132302A TW 201026879 A TW201026879 A TW 201026879A
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Taiwan
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precursor
radical
bond
dielectric layer
inert gas
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TW098132302A
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Abhijit Basu Mallick
Srinivas D Nemani
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Applied Materials Inc
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Description

201026879 六、發明說明： 【發明所屬之技術領域】 本發明有關於形成氮化矽基（silicon nitride based)膜 或碳砍基（silicon carbon β 【先前技術】 自從數十年前引入半導體元件之後，至今元件幾何結 ® 構的尺寸大幅縮小。現代半導體製造設備常態性地制造 特徵尺寸為250nm、1 80nm與65nm的元件，並且正在發 展新的設備，以期製造具有更小幾何結構的元件。然而， 較小尺寸意味著元件必須更靠近地一起運作，可能提高 包括串擾（cross talk)與寄生電容在内的電性干擾機率。 為了降低電性干擾的程度，會使用介電絕緣材料來填 充介於元件、金屬線與其他元件特徵結構之間的間隙、 φ 溝渠和其他空間。所選擇的介電材料通常容易形成在元 件特徵結構之間的空隙内且具有低介電常數（即，「k 值」）。具有較低k值的介電質能較佳地減小串音與RC 時間延遲，並且降低元件的總體功率耗損。習知介電材 料包括氧化矽，當以習知CVD技術沉積氧化矽時，其具 有介於4.0至4·2之間的平均k值》 雖然習知CVD氧化矽的k值能為多種元件結構所接 受，但由於元件尺寸持續縮小且元件密度不斷提高，使 得半導體製造商尋求具有更低k值的介電材料^已發展 201026879 出一種在氧化矽中摻雜氟的方法，以製造出介電常數低 達約3.4至約3.6的摻雜氧化矽膜（即，「FSG」臈）。亦研 發出另一種旋塗玻璃技術，將高流動性前驅物（如，含氫 倍半矽氧烷’ HSQ)塗覆在基板上來形成多孔性低k膜。 此外，在各種半導髖結構（例如，淺溝渠隔離結構、金 屬層内連線結構或其他半導體結構）中也會使用氮化矽 膜和碳化矽膜進行電性隔離。可利用CVD技術來形成氮 ® 化矽膜與碳化矽膜。習知的氮化矽膜和碳化矽膜是在高 溫下形成，例如550°C。550°C之CVD製程帶來的熱預 算可能對半導體結構中的井區及/或摻質區分佈情況造 成不良影響。 因此’期望能夠改善目前的氮矽基薄膜或碳矽基薄膜 沉積方法》 【發明内容】
本發明實施例意欲提供比習知製程更加優越的方法， 該方法採用遠端電漿系統（RPS)來產生含氮自由基前驅 物及/或惰性氣體自由基前驅物，以在低製程溫度（例 如’約100°C或更低溫）下與有機矽及/或矽前驅物反應 形成氮化矽基介電層或碳矽基介電層《例如，用來形成 氮化碎基層（silicon nitride based layer)的梦前媒物具有 N-Si-H鍵、N-Si-Si鍵及/或Si-H鍵。用來形成碳矽基層 (silicon carbon based layer)的有機矽前驅物具有 C-Si-H 4 201026879 鍵及/或C-Si-Si鍵。由於該含氮自由基前驅物及/或惰性 氣體自由基前驅物實質上不含氧，因此該方法能依期望 地形成氮化矽基層或碳矽基層。 一實施例提供一種沉積氮化矽基介電層的方法。該方 法包括將一石夕前驅物和一氣自由基前驅物引入一沉積腔 室中。該矽前驅物具有N-SMi鍵、N-Si-Si鍵及/或Si-Si-H 鍵。該氮自由基前驅物實質不含氧。該氮自由基前驅物 是在該沉積腔室的外部產生。該矽前驅物與該氮自由基 前驅物反應而形成氮化矽基介電層。 另一實施例提供一種沉積氮化矽基介電層的方法。該 方法包括引導一矽前驅物與一氮自由基前驅物至一沉積 腔室中。該矽前驅物具有通式ISiHnX4_n，η為1~4其中一 數值，X為鹵素。該矽前驅物具有Si-H鍵，該Si-H鍵 比Si-X鍵要弱。該氮自由基前驅物實質不含氧。該氮自 由基前驅物是於該沉積腔室外部產生。該梦前驅物與該 氮自由基前驅物反應而形成氮化矽基介電層。 另一實施例提供一種沉積碳矽基介電層的方法。該方 法包括引導一有機矽前驅物與一惰性氣體自由基前驅物 至一沉積腔室中。該有機矽前驅物具有一選自於由 C-Si-H鍵和C-Si-Si鍵所構成之群組中的鍵。該惰性氣 體自由基前驅物實質不含氧。該惰性氣體自由基前驅物 是在沉積腔室外部所產生。該有機矽前驅物與該惰性氣 體自由基前驅物反應，而形成碳石夕基介電層。 本發明的上述及其他實施例且伴隨其優點與特徵將參 201026879 考附圖與以下内容進一步詳細說明如下。然而，應了解 到’本發明並不僅限於本文中所顯示的破切配置方式與 手段。 【實施方式】 本發明有關於形成氮化石夕基介電層或碳發基介電層的 方法。在一實施例中，該些方法使用遠端電漿系統（Rps) ⑩ 來產生含氮自由基的前驅物及/或惰性氣體自由基前聪 物’以在低製程溫度（例如，約l〇〇〇c或更低溫）下與一 有機矽前驅物及/或石夕前驅物反應，以形成氮化發基介電 層或碳矽基介電層。用來形成氮化矽基介電層的珍前聪 物具有N-Si-H鍵、N-Si-Si鍵及/或Si-H鍵。用來形成碳 矽基介電層的有機矽前驅物具有C-Si-H鍵及/或C-Si-Si 鍵。具有弱且不穩定的Si-H或Si-Si鍵結，可形成自由 基發（radical Si) ’而能與氣自由基（radical nitrogen)或自 ❹ 由基碳（radical carbon)形成Si-N或Si-C鍵，而形成氮化 石夕基介電層或碳矽基介電層。此外，含氮自由基前驅物 及/或惰性氣體自由基前驅物可實質不含氡，該些方法可 依期望地形成氮化矽基或碳矽基介電層。 第1圓是一流程圖，其顯示根據本發明在一基板上形 成氮化石夕基介電層的示範性方法。該示範性方法丨〇〇包 括數個未詳盡列出的步驟’亦可在該方法中添加額外的 步驟（未顯示）。習知技藝者將能理解到尚有多種其他變 201026879 化、修錦與替代態樣。在實施例中，方法ι〇〇可包括引 導夕月|』驅物與一氮自由基前驅物至—沉積腔室中其 中該石夕前驅物具有選自於由N_si_H、N_sisi及siH所 構成之群組中的一鍵，該氮自由基前驅物實質不含氧元 素並且該氮自由基前驅物是在沉積腔室外部形成（製程 步驟110)。該矽前驅物與該氮自由基前驅物在沉積腔室 中反應，而生成一含矽且含氮介電層（製程步驟120)。該 Φ 氮化石夕基介電層可例如是氮化石夕層或氮氧化石夕層。在實 施例中’一矽前驅物與一氮自由基前驅物在一沉積腔室 内反應，其中該矽前驅物具有通式SiHnX4 n，其中η是 1〜4的其中一數值，χ為齒素，並且該矽前驅物具有 Si-H鍵’該Si-H鍵比Si-X鍵要弱》 該矽前驅物具有選自於由N-Si-H、N-Si-Si及Si-H所 構成之群組中的一鍵。例如，該矽前驅物可為（甲）矽烷 (silane)、線性聚矽烷（如，二矽烷（disUane)、三碎烧 參 （trisilane)以及更高階的類似物）、環狀聚矽烷類（例如， 環戊矽烧（cyclopentasilane)及梯形聚梦烧（iadder polysilane))、二胺基矽烷類（diaminosilanes，其中 ri 與 R2為烷基，例如甲基、乙基及更高階類似物及/或氫）、 三梦炫基胺類（trisilylamines，其中R為烧基，例如甲基、 乙基及更高階類似物及/或氫）、三甲矽烷基胺（N(SiH3>3)。 7 201026879
矽烧 , ㈣ w wm ή 線性聚矽烷 二胺基矽烷 sitm
Si,
HjS/-SIHt 環戊矽烷 /w-、 l?2WSf’ 、扮崎 三矽烷基胺
三甲矽烷基胺 在實施例中’在將石夕前躁物引入沉積腔室内之前或引 入沉積腔室的過程中，該矽前驅物可與一載氣混合。載 氣可以是一非反應性氣體，其不會干擾氮化矽層或氮氧 化石夕層的形成。載氣的範例包括氛、氖、氫及其他類似 ❹ 氣體。舉例而言’藉著將氣態或液態矽化合物與氦氣混 合以將矽前驅物導入沉積腔室中的方式，是使流速約600 至約2400sccm的氧氣通過室溫的硬前驅物，以提供流量 約800 mgm至約1600mgm的前驅物至沉積腔室中。 可在沉積腔室外部生成該氮自由基前驅物。例如，可 在一遠端電漿生成系統（RPS)中產生該氮自由基前驅 物，該遠端電漿生成系統藉著將一較穩定的起始材料暴 露於電聚下來產生反應性物種。例如，起始材料可以是 含有氨分子（NH3)及/或氮氣（NO的混合物》將該起始材料 201026879 暴露於來自RPS的電漿下，造成一部份的氨分子分解成 N自由基、NH自由基及/或NH2自由基的高反應性物 種，這些高反應性物種能在介於約-10°C至約100°C之間 的溫度下依照期望地置換掉矽前驅物中的Si-Si鍵及/或 Si-H鍵，而在基板表面上形成一流動性介電質。由於該 氮自由基前驅物實質不含氧，因此該方法能依期望地形 成氮化矽基介電層。在實施例中，該氮前驅物是NH3， 而非ΝΟχ 〇 氮自由基前驅物可以是例如，Ν、ΝΗ及/或ΝΗ2，以及 其他氮自由基前驅物及/或該些前驅物的組合。Ν自由 基、ΝΗ自由基及/或ΝΗ2自由基是反應性的，故會攻擊 Si-H及/或Si-Si這些不穩定的弱鍵結。ν自由基、ΝΗ 自由基及/或NH2自由基隨後與矽自由基鍵結而形成 Si-N、Si-NH及/或Si-NH2鍵，這些鍵比Si-H和Si-Si鍵 更加穩定。藉著形成Si-N、Si-NH及/或Si-NH2鍵，可 如期望地在基板上沉積氮化矽基層或氮氧化矽基層。在 實施例中’惰性氣體自由基前驅物，例如氬（Ar)、氪（Kr) 及/或氙（Xe) ’可引入沉積腔室中以轟擊si-H及/或Si-Si 鍵，使Si-H及/或Si-Si鍵斷裂並且形成矽自由基。矽自 由基可與N、NH及/或NH2反應，而形成Si-N、Si-NH 及/或Si-NH2鍵。因此’該惰性氣體自由基前驅物能依 期望地幫助該矽前驅物和該含氮自由基前驅物在基板上 沉積形成氮化矽層或氮氧化矽層。 在實施例中’方法100無需在任何含氧環境中進行退 201026879 火製程以將氮化矽基膜轉化成氧化矽基膜。舉例而言， 方法100不需要可將氮化矽基膜轉換成氧化矽基膜的蒸 氣退火製程。藉著免於使用含氧退火製程，可依期望地 達成氮化矽基膜。 第2圖之流程圖顯示根據本發明在一基板上形成碳梦 基（silicon carbon based)介電層的示例性方法。示例性方 法200包含未詳盡列出的多個步驟’亦可在該方法中增 ❺ 加多個額外步驟（未顯示）。該領域中具有通常知識者能 理解尚有許多變化、修飾及替代態樣。在實施例中，方 法200包括引導一有機矽前驅物及一惰性氣體自由基前 驅物至一沉積腔室中，其中該有機矽前驅物具有選自於 由C-Si-H及C-Si-Si所構成之群組中的一鍵，該惰性氣 體自由基前驅物實質不含氧，並且該惰性氣體自由基前 媒物是在沉積腔室外部所產生（步驟21〇)〇在實施例中， 惰性氣髏自由基前驅物不具備氧基團。該有機矽前驅物 ® 與該惰性氣體自由基前驅物在沉積腔室中反應而形成一 碳矽基介電層（步驟220)。舉例而言，該碳矽基介電層可 以是碳化矽（SiC)層、碳氧化矽（SiOC)層或氮碳化矽 (SiCN)層。 該有機矽前驅物具有選自於由C-Si-H及C-Si-Si所構 成之群組中的一鍵。例如，用來形成碳化矽（sic)膜的有 機矽前驅物可以是烷基矽烷類（alkylsiianes，其中r是烧 基’例如，甲基、乙基及更高階類似物及/或氳）、橋連 燒基發娱·〇Γί<1§βί1 alkylsilanes，其中R是烧基，例如， 201026879 甲基、乙基及更高階類似物及/或氫）、環狀烷基矽烷 (cyclic alkysilanes，其中R是烷基，例如，甲基、乙基 及更高階類似物及/或氫）及/或環狀烷基二矽烷（cyclic aliyldisilanes，其中R1和R2是烷基’例如，甲基、乙
基及更咼階類似物h對於形成碳氧化矽（Si〇c)膜的實施 例，該有機矽前驅物可為，例如，線性聚烷氧矽烷〇inear polyalkoxysilanes，其中R是烷氧基，例如，甲氧基、乙 ❹ 氧基及更南階的類似物）、環狀烧氧基二；5夕烧（CyCliC alkoxydisilanes，其中Ri和R2是烷氧基，例如，甲氧 基、乙氧基及更高階類似物）' 烷氧基矽烷（alky silanes， 其中R是烷氧基’例如，甲氧基、乙氧基及更高階類似 物）、烧氧基二石夕烧（alkoxydisilanes，其中R1和R2是燒 氧基，例如，甲氧基、乙氧基及更高階類似物）及/或聚 胺基矽烷（polyaminosilanes，其中R是烷氧基，例如， 甲氧基、乙氧基及更高階類似物）。對於形成氮碳化發 Φ (SiCN)膜的實施例，該有機矽前驅物可為，例如，環狀 燒胺基石夕烧（cyclic alkylaminosilanes，其中R是烧基， 例如甲基、乙基及更尚階類似物及/或氫）、三胺基珍燒 (triaminosilanes，其中R1和R2是统基，例如甲基、乙 基及更高階類似物）、二胺基石夕烧（diaminosilanes，其中 R1和R2是烧基，例如甲基、乙基及更高階類似物）及/ 或三石夕炫基胺（trisilylamines，其中R是烧基，例如甲基、 乙基及更高階類似物）。 201026879 用於SiC膜：
烷基矽烷 橋連烷基矽烷 環狀烷基矽烷
環狀烷基二矽烷 用於SiOC膜：
"Τ’. fh m 校 》. . .* ft 線性聚烷氧基矽烷 ft? __ —L· / Rf
環狀烷氧基二矽烷 12 201026879 烷氧基二矽烷 烷氧基矽烷
聚胺基矽烷 用於SiCN膜： η a \/ R\/ Η Η
H
ft—：·&*、 R 環狀胺基矽烷
VflW. M 1 妒m’ 、w?1 护 三胺基矽烷
物N、 ,Η fR2RH Ή 二胺基矽烷
SiH^
三矽烷基胺 在實施例中，在該有機矽前驅物引入沉積腔室内之前 或引入過程中’該有機矽前驅物可與一載氣混合。載氣 可為一非反應性氣鱧，其實質上不干擾碳矽基介電層的 形成。載氣的實例可包括氦、氖、氬與氫，或其他氣體。 例如’藉著將氣態或液態有機矽化合物與氦氣混合以將 13 201026879 有機矽前驅物導入沉積腔室中的方式’是使流速約6〇〇 至約2400sccm的氦氣通過室溫的有機矽前驅物，以提供 流量約800 mgm至約16〇〇mgm的前驅物至沉積腔室中。 該惰性氣體自由基前驅物可在沉積腔室外部產生。例 如，該惰性氣體自由基前驅物可在一遠端電漿生成系統 (RPS)中產生，該遠端電漿生成系統藉著使較不穩定的起 始材料暴露於電漿來產生轟擊物種。舉例而言，該起始 φ 材料可為包含Ne、Ar、Kr及/或Xe的氣體《將該起始材 料暴露於來自RPS的電漿中造成一部份的惰性氣體分解 成Ne、Ar、Kr及/或Xe自由基，其能依期望地轟擊有機 矽前驅物中的Si-Si及/或Si-H鍵，而形成能彼此反應的 C-Si自由基。在實施例中，C-Si自由基能在介於約 至約100°C之間的溫度下彼此反應，而在基板表面上形 成流動性的介電材料。由於該惰性氣體自由基前驅物實 質不含氧元素，該方法能依期望地形成碳矽基介電層。 β 該惰性氣體自由基前驅物可為，例如，Ne、Ar、Kr及 /或Xe，以及其他惰性氣體自由基前驅物和該些前媒物 的組合。Ne、Ar、Kr及/或Xe自由基被引入沉積腔室中， 以轟擊Si-H及/或Si-Si鍵，而打斷Si-H及/或Si-Si鍵 並且形成C-Si自由基。該些氣體前驅物的C-Si自由基 可彼此反應，而形成C-Si-H及/或C-Si-Si鍵。因此，該 惰性氣體自由基前驅物能依期望地打斷Si-H及/或Si-Si 鍵，使得該有機矽前驅物自由基能夠互相反應，而在基 板上形成SiC層、SiOC層或SiCN層》 201026879 第3圖是本發明之示範性製程系統的概要剖面圖。在 第3圖中，系統300包含一沉積腔室3〇1，在該沉積腔 室中，前驅物彼此進行化學性反應並且在基板3〇2上沉 積一流動性介電膜。基板302(例如，200mm、300mm、 400mm等直徑的半導體基板晶圓）可置於一可旋轉基板 基座304上，該可旋轉基板基座3〇4能垂直移動以定位 基板302，使基板接近或遠離上方的前驅物分配系統 ❹ 306。基座304能以約lrpm至約2000rpm(例如，約l〇rpm 至約120rpm)的轉速來旋轉基板302。基座304能垂直地 移動基板302，使基板302與前驅物分配系統306的側 喷嘴308相距例如約〇.5mm至約100mm的距離。 前驅物分配系統306包含複數個放射狀分佈的側喷嘴 308’每個喷嘴具有兩種不同長度的其中一種長度。在實 施例中’該些側噴嘴308可選用性地是繞著沉積腔室30i 之腔室壁呈環狀分佈的多個開口。該些前驅物流經這些 ® 開口而進入腔室301中》 前驅物分配系統306可包含圓錐狀的頂部擋板310， 該頂部擒板310與該基板基座3 04的中心同轴》流體通 道312通過擋板310的中心以提供前驅物或載氣，且其 所提供的前驅物或載氣與向下流經擋板31〇之外側引導 表面的前驅物具有不同組成。 標板310的外側表面可被導管314所圍繞，其引導來 自位於沉積腔室301上方之反應性物種生成系統（未顯示） 的反應性前驅物。導管314可為直圓管，且其一末端開 15 201026879 口與播板310的外側表面耦接，並且另一末端則與該反 應性物種生成系統（未標明）耦接。該反應性物種生成系 統可為一遠端電漿生成系統（RPS)，其藉著使一較不穩定 起始材料暴露於電漿來產生反應性物種。由於該反應性 物種生成系統中所產生的反應性物種即使在室溫下也通 常對於其他沉積前驅物具有高反應性，因此該些反應性 物種在與其他沉積前驅物混合之前，可在一隔離的氣體 ❿ 混合物下導管314中輸送該些反應性物種並且藉由擋板 310將之分散至反應腔室301内。 在實施例中，系統300亦可包含RF線圈（未顯示），其 纏繞在沉積腔室301的圓頂316周圍。這些線圈能在沉 積腔室301中創造出感應耦合電漿，以其促進該些反應 性物種前驅物和其他前驅物的反應性，以在基板上沉積 該流動性介電膜。舉例而言’利用RF線圈使藉由擋板 310引入腔室301的含反應性氮自由基氣流以及從通道 © 312及/或一或多個側喷嘴3〇8引入的有機矽前驅物在基 板3 02上方反應。在電漿中，該氮自由基和該有機砍前 媒物即使在低溫下也可快速反應，而在基板3〇2的表面 上形成一流動性介電膜。 可利用基座304使基板表面本身旋轉，以達到期望的 >儿積膜均勻度。旋轉平面可平行於晶園沉積表面的平 面’或者兩個平面可能部份不對準。當該些平面不對準 時’基板302的旋轉可能產生擺動，而該擺動可能在沉 積表面上方的空間中產生流艘滿流（fluid turbulence)。在 16 201026879 系些情況中，此渦流亦可能促進沉積在基板表面上之介 電膜的均勻度。基座304亦可包含多個凹槽及/或其他結 構，該些凹槽及/或其他結構產生真空吸引卜扣训爪此此匕) 以當基座移動時將晶圓持定在基座上。腔室3〇1中的典 型沉積壓力是約〇.〇5Torr至約200T〇rr的總腔室壓力（例 如，ιτ〇ΓΓ)，此壓力可產生能將晶圓固持於定位的真空吸 力。 ❹ 可利用馬達318來驅動基座旋轉，馬達318設置在沉 積腔至301下方並且可旋轉地耦接至軸32〇，轴㈣支 撐基座304。軸320可包含内部通道（未顯示）用以將來自 位在’儿積腔至3G1下方之冷卻/加熱系統的冷卻流體及， 或電線攜帶至基座3〇4。該些内部通道從基座3G4的中 ”延伸到基座3G4之周圍，以為基板3()2提供均勻的冷 卻及/或加熱。該些通道設計成當軸320及基板基座304 旋轉及/或移料可進行操作。例如，冷卻系統可在基座 3〇4旋轉且沉積介電膜的過程中運作，以保持基板302 的溫度約1 〇〇°C或更低。 系統3〇0可包含輕射系統322設置在圓頂316上方。 s射系統322的燈（未顯示）能照射基板，以烘烤或退 此“在基板302上的沉積膜。可在沉積過程中啓動該 ^ M促進該些薄媒前驅物或沉積膜中的反應。至少 圓頂316的頂部部份菩 通過的半透明材料所製成P份該些燈發出之光線 當文中提供—數值範圍時，需了解到，除非文中内容 17 201026879
另有明確指示’否則介於該範圍之上下限值之間且計算 至較小限值單位之十分之一位的每個中間值亦屬於本案 具體揭不内容。並且介於文中所述任何數值或所述範圍 内任一中間值與任何另一所述數值或該範圍中另一中間 值之間的較小範圍，亦屬於本發明範疇。這些較小範圍 的上下限值可各自獨立地包含在該範圍中或排除在該範 圍外，並且該些包含其中一個限值、兩限值皆不包含或 兩限值皆包含的各個較小範圍（若所述範圍有特別載明 排除任一限值的話）也屬於本發明範嘴。當所述範圍包含 其中一個或兩個限值時，則將其中任一限值或兩限值排 除的該些範圍亦為本發明所涵蓋。 關於此處與後附申請專利範圍中所使用之單數用語 「一」、「一個」以及「該」，除非文中另有明確指示，否 則該些單數用語亦包含複數之意。因此，舉例而言，當 提及「一製程」時，可能包含複數個此類製程，並且當 述及「該喷嘴」時，可能包括—或多個喷嘴及所屬技術 領域中習知技藝者已知的等效物，以及諸如此類者。 此外，本案說明書及後附申請專利範圍中使用之「包 括」、「包含」、「含有」、「含」及「具有」等用語是意欲 說明文中所述特徵、整數、構件或步驟的存在，但不排 除可能存在或增加一或多個其他特徵、整數、構件、步 驟或基困。 【圖式簡單說明】 18 201026879 可參考附圖與說明書其他部份的内容來進一步了解本 發明的本質及優點，並且盡可能地在數個附圖終始相似 的元件符號來代表相似的元件。在某些範例中，伴隨元 件符號而接續於連字號之後的下標符號則是代表多個類 似元件的其中一個元件。當一元件符號未註明有下標符 號時’則該元件符號代表所有的此類相似元件。 第1圖是一流程圖’其顯示根據本發明在一基板上形 ❾ 成氣化碎基介電層的示範性方法。 第2圖是一流程圖，其顯示根據本發明在一基板上形 成破秒基介電層的示範性方法。 第3圖是根據本發明之示範性製程系統的概要剖面 圖。 【主要元件符號說明】 100、200 方法 110、120、210、220 步驟 300系統 301沉積腔室 302基板 基板基座 3〇6前驅物分配系統 308側喷嘴 31〇頂部擋板 19 201026879 3 1 2流體通道 314導管 316圓頂 3 1 8馬達 320轴 322輻射系統

Claims (1)

  1. 201026879 七、申請專利範圍： 1. 一種沉積一氮化矽基介電層的方法，該方法包括以下 步驟： 引導一矽前驅物及一氮自由基前驅物至一沉積腔室 中，其中該矽前驅物具有選自於由N-Si-H鍵、N-Si-Si 鍵及Si-Si-H鍵所構成之群組中的一鍵，該氮自由基前媒 物實質不含氧’並且該氮自由基前駆物是在該沉積腔室 ❹ 外部產生；以及 反應該梦則驅物及該氮自由基前媒物，以形成該氮 化矽基介電層。 2. 如申請專利範圍第1項所述之方法，其中該矽前驅物 是選自由以下各者所構成之群組：線性聚矽烷（Unear polysilanes)、二胺基矽烷（diamin〇silanes)、三矽烷基胺 (trisilylamines)、雙（二乙胺基）矽烷 擊 （biS(diethylamin〇)silane)、環戊矽烷（eycl〇pentasilane)、 N(SiH3)3 及 / 或梯形聚矽烷（ladder p〇lysUanes)。 3. 如申請專利範圍第1項所述之方法，其中該氮自由基 前驅物是選自由以下各者所構成之群組：n、nh和NH2。 4. 如申請專利範圍第1項所述之方法，更包括：一惰性 氣體自由基前驅物。 21 201026879 5_如申請專利範圍第4項所述之方法，其中該惰性氣體 自由基刖媒物疋自由基氯（Ar)。 6. 如申請專利範圍第1項所述之方法，彡中反應該石夕前 驅物和該氮自由基前驅物的步驟具有介於約_1〇。(：至約 1 oo°c之間的一製程溫度。 魯 7. 如申請專利範圍第1項所述之方法，其中該氮化矽基 介電層是一氣化梦層。 8. 如申請專利範圍第1項所述之方法，更包括以下步 驟：在一遠端製程系統中產生該氮自由基前驅物。 • 9· 一種沉積一氣化矽基介電層的方法，該方法包括以下 步驟： 引導一矽前驅物及一氮自由基前驅物至一沉積腔室 中’其中該矽前驅物具有式SiHnX4_n，η為！〜4中的一數 字’ X是鹵素’該石夕前驅物具有一Si-H鍵，該Si-H鍵 比Si-X鍵要弱，該氮自由基前驅物實質不含氧，並且該 氮自由基前驅物是在該沉積腔室外部產生：以及 反應該砍刖驅物及該氣自由基前驅物，以形成該氣 化矽基介電層。 22 201026879 ίο.如申请專利範圍第9項所述之方法其中該石夕前驅 物是矽炫·。 八 u.如申請專利_第9項所述之方法，其中該氣自由 基前驅物選自由以下各者所構成之群組:N、NH0H2。 魯 如申請專利範圍第9項所述之方法，更包括：一惰 性氡體自由基前驅物。 13 如申請專利範圍第12項所述之方法其中該惰性氣 锻自由基前驅物是自由基氬（Ar)。 ’如申請專利範圍第9項所述之方法，其中反應該矽 :驅物和該氮自由基前驅物的步驟具有介於約身c至 、* 1 〇o°c之間的一製程溫度。 15 如申請專利範圍第9項所述之方 基介電層是一氮化;g夕層 法’其中該氮化發 16 如申請專利_ 9項所述之方法，更包括以下步 •在-遠端製程系統中產生該氮自由基前驅物。 17 — 歩·驟： 種沉積一碳矽基介電層的方法，該方法包括 以下 23 201026879 引導一有機矽前驅物和一惰性氣體自由基前驅物至 一沉積腔室中，其中該有機矽前驅物具有選自於由 C-Si-H鍵和C-Si-Si鍵所構成之群組中的一鍵，該惰性 氣體自由基前驅物實質不含氧，且該惰性氣體自由基前 驅物是在該沉積腔室外部產生；以及 反應該有機矽前驅物及該惰性氣體自由基前驅物， 以形成該碳矽基介電層。 18. 如申請專利範圍第17項所述之方法，其中提供之該 有機矽前驅物是用以形成一碳化矽（SiC)層，並且選自由 以下各者所構成之群組：炫基梦炫（alkylsilanes)、橋連 烧基梦烧（bridged alkylsilanes)、環狀炫基石夕燒（CyCHc alkysilanes)及環狀烷基二矽烷（cyclic alkyldisilanes) 〇 19. 如申請專利範圍第17項所述之方法，其中提供之該 ® 有機矽前驅物是用以形成一碳氧化矽（SiOC)層，且選自 由以下各者所構成之群組：線性聚烧基石夕炫（linear polyalkylsilanes) ' 環狀烷氧基二矽烷（cyclic alkoxydisilanes)、烷氧基矽烷（alkoxySilanes)、烷氧基二 梦烧（alkoxydisilanes)及聚胺基梦燒（polyaminosilanes) » 20. 如申請專利範圍第17項所述之方法，其中提供之該 有機矽前驅物是用以形成一碳氮化矽（SiCN)層，並且選 自由以下各者所構成之群組.環狀胺基梦烧（cyclic 24 201026879 aminosilanes)、三胺基石夕烧（triaminosilanes)、二胺基石夕 烧（(1丨&111丨110 311&1^8)及/或三石夕统基胺（1；1^丨1丫1&1]1丨1163)。 21.如申請專利範圍第17項所述之方法，其中該惰性氣 體自由基前驅物是自由基氬（Ar) » 22. 如申請專利範圍第17項所述之方法，其中反應該有 機矽前驅物和該惰性氣體自由基前驅物的步驟具有介於 約-10°C至約100〇C之間的一製程溫度。 23. 如申請專利範圍第17項所述之方法，其中該碳化矽 基介電層是一破化梦層》 24.如申請專利範圍第17項所述之方法更包括以下步 驟：在-遠端製程系統中產生該惰性氣體自由基前驅物。 25
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JP2012504867A (ja) 2012-02-23
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US20100081293A1 (en) 2010-04-01
WO2010039363A2 (en) 2010-04-08
KR20110082025A (ko) 2011-07-15

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