TW200802632A - Fabrication method of semiconductor device - Google Patents
Fabrication method of semiconductor deviceInfo
- Publication number
- TW200802632A TW200802632A TW096112744A TW96112744A TW200802632A TW 200802632 A TW200802632 A TW 200802632A TW 096112744 A TW096112744 A TW 096112744A TW 96112744 A TW96112744 A TW 96112744A TW 200802632 A TW200802632 A TW 200802632A
- Authority
- TW
- Taiwan
- Prior art keywords
- vacuuming
- collet
- vacuum
- pipe
- chip
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 2
- 239000011800 void material Substances 0.000 abstract 1
Classifications
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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JP2005166925A (ja) * | 2003-12-02 | 2005-06-23 | Tokyo Seimitsu Co Ltd | ウェーハ加工方法およびウェーハ加工装置 |
JP2005322815A (ja) | 2004-05-11 | 2005-11-17 | Matsushita Electric Ind Co Ltd | 半導体製造装置および半導体装置の製造方法 |
JP2005332982A (ja) * | 2004-05-20 | 2005-12-02 | Renesas Technology Corp | 半導体装置の製造方法 |
JP4397748B2 (ja) | 2004-07-08 | 2010-01-13 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
-
2006
- 2006-05-23 JP JP2006143277A patent/JP5054933B2/ja active Active
-
2007
- 2007-04-11 TW TW096112744A patent/TW200802632A/zh unknown
- 2007-04-16 US US11/735,741 patent/US7629231B2/en not_active Expired - Fee Related
- 2007-05-08 KR KR1020070044347A patent/KR101360635B1/ko active IP Right Grant
- 2007-05-18 CN CNA2007101079487A patent/CN101079374A/zh active Pending
-
2009
- 2009-11-13 US US12/618,292 patent/US8703583B2/en active Active
-
2013
- 2013-06-17 KR KR1020130068778A patent/KR101405768B1/ko active IP Right Grant
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI673806B (zh) * | 2015-11-12 | 2019-10-01 | 南韓商韓美半導體股份有限公司 | 熱壓鍵合裝置 |
TWI652143B (zh) | 2016-03-18 | 2019-03-01 | 日商荏原製作所股份有限公司 | 研磨裝置及研磨方法 |
TWI676226B (zh) * | 2017-05-31 | 2019-11-01 | 日商捷進科技有限公司 | 半導體製造裝置及半導體裝置的製造方法 |
TWI777823B (zh) * | 2020-11-25 | 2022-09-11 | 中國商蘇州晶湛半導體有限公司 | 光電裝置及其製備方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2007317748A (ja) | 2007-12-06 |
US20070275544A1 (en) | 2007-11-29 |
US7629231B2 (en) | 2009-12-08 |
US8703583B2 (en) | 2014-04-22 |
US20100055878A1 (en) | 2010-03-04 |
KR20130083872A (ko) | 2013-07-23 |
KR20070113109A (ko) | 2007-11-28 |
CN101079374A (zh) | 2007-11-28 |
KR101405768B1 (ko) | 2014-06-10 |
JP5054933B2 (ja) | 2012-10-24 |
KR101360635B1 (ko) | 2014-02-07 |
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