TW200745527A - Dynamic quantity measurement device - Google Patents
Dynamic quantity measurement deviceInfo
- Publication number
- TW200745527A TW200745527A TW096104628A TW96104628A TW200745527A TW 200745527 A TW200745527 A TW 200745527A TW 096104628 A TW096104628 A TW 096104628A TW 96104628 A TW96104628 A TW 96104628A TW 200745527 A TW200745527 A TW 200745527A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- parallel
- measurement device
- type diffusion
- quantity measurement
- Prior art date
Links
- 238000005259 measurement Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
- G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Pressure Sensors (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
- Measuring Volume Flow (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006089834A JP4697004B2 (ja) | 2006-03-29 | 2006-03-29 | 力学量測定装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200745527A true TW200745527A (en) | 2007-12-16 |
TWI356902B TWI356902B (zh) | 2012-01-21 |
Family
ID=38330481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096104628A TW200745527A (en) | 2006-03-29 | 2007-02-08 | Dynamic quantity measurement device |
Country Status (6)
Country | Link |
---|---|
US (3) | US7992448B2 (zh) |
EP (1) | EP1840500A3 (zh) |
JP (1) | JP4697004B2 (zh) |
KR (1) | KR100844092B1 (zh) |
CN (1) | CN101046368B (zh) |
TW (1) | TW200745527A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI686594B (zh) * | 2016-09-14 | 2020-03-01 | 大陸商宸鴻科技(廈門)有限公司 | 壓力感測模組與壓力觸控感測系統 |
US11978680B2 (en) | 2018-12-31 | 2024-05-07 | Micron Technology, Inc. | Method and apparatus for on-chip stress detection |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4697004B2 (ja) * | 2006-03-29 | 2011-06-08 | 株式会社日立製作所 | 力学量測定装置 |
TWI416739B (zh) * | 2006-05-01 | 2013-11-21 | Tanita Seisakusho Kk | 半導體型應變檢測器及其製造方法 |
JP4710779B2 (ja) * | 2006-09-28 | 2011-06-29 | 株式会社日立製作所 | 力学量計測装置 |
JP4528810B2 (ja) | 2007-08-03 | 2010-08-25 | 日立建機株式会社 | 荷重センサおよび荷重センサの製造方法 |
DE102007057667A1 (de) * | 2007-11-30 | 2009-09-03 | Siemens Ag | Vorrichtung zur Detektion von Partikeln in einem Fluid |
JP5308060B2 (ja) * | 2008-04-25 | 2013-10-09 | 株式会社日立製作所 | 半導体歪センサー |
JP5137701B2 (ja) * | 2008-06-12 | 2013-02-06 | 前田金属工業株式会社 | 締付トルク測定ユニット |
FR2946775A1 (fr) | 2009-06-15 | 2010-12-17 | St Microelectronics Rousset | Dispositif de detection d'amincissement du substrat d'une puce de circuit integre |
CA2789584A1 (en) | 2010-02-12 | 2011-08-18 | Freedom Innovations, L.L.C. | Novel enhanced methods for mimicking human gait with prosthetic knee devices |
WO2011100117A2 (en) | 2010-02-12 | 2011-08-18 | Freedom Innovations, L.L.C. | Compact and robust load and moment sensor |
JP5630088B2 (ja) * | 2010-06-16 | 2014-11-26 | ミツミ電機株式会社 | ピエゾ抵抗式圧力センサ |
JP5427733B2 (ja) * | 2010-08-27 | 2014-02-26 | 株式会社日立製作所 | 力学量測定装置 |
CA2806543C (en) * | 2010-11-24 | 2016-05-17 | The Governors Of The University Of Alberta | A novel embedded 3d stress and temperature sensor utilizing silicon doping manipulation |
US9157822B2 (en) * | 2011-02-01 | 2015-10-13 | Kulite Semiconductor Products, Inc. | Electronic interface for LVDT-type pressure transducers using piezoresistive sensors |
JP5843850B2 (ja) * | 2011-04-21 | 2016-01-13 | 株式会社日立製作所 | 力学量測定装置、半導体装置、剥離検知装置およびモジュール |
CN103620706A (zh) * | 2011-06-17 | 2014-03-05 | 美国亚德诺半导体公司 | 减少偏移的电阻电路 |
EP2549253B1 (de) * | 2011-07-19 | 2017-08-09 | Magna Steyr Fahrzeugtechnik AG & Co KG | Meßkörper, Kraftmeßsensor und Meßanordnung zur Messung von Kräften |
JP5320445B2 (ja) * | 2011-09-12 | 2013-10-23 | 日立Geニュークリア・エナジー株式会社 | 弁装置の監視システム |
EP2758667B1 (en) * | 2011-09-22 | 2019-03-13 | Parker-Hannifin Corporation | Self pumping and sensing hose utilizing electroactive polymer strips |
US8887585B2 (en) * | 2011-11-26 | 2014-11-18 | Tecsis Gmbh | Force-sensing device for measuring a traction-and/or pressure force load in structure |
KR101318260B1 (ko) | 2012-03-06 | 2013-10-16 | 경북대학교 산학협력단 | 반도체 소자 및 이를 이용하는 물리 센서 |
US10088937B2 (en) | 2012-05-03 | 2018-10-02 | Apple Inc. | Touch input device including a moment compensated bending sensor for load measurement on platform supported by bending beams |
ITMI20120912A1 (it) * | 2012-05-25 | 2013-11-26 | St Microelectronics Srl | Package in materiale edilizio per dispositivo di monitoraggio di parametri, all'interno di una struttura solida, e relativo dispositivo. |
US8857271B2 (en) * | 2012-07-24 | 2014-10-14 | The Boeing Company | Wraparound strain gage assembly for brake rod |
CH707008A1 (de) * | 2012-09-27 | 2014-03-31 | Kistler Holding Ag | Dehnungstransmitter. |
JP6090742B2 (ja) * | 2013-02-28 | 2017-03-08 | 日立オートモティブシステムズ株式会社 | 圧力検出装置 |
JP5904959B2 (ja) * | 2013-03-08 | 2016-04-20 | 日立オートモティブシステムズ株式会社 | 熱式空気流量計 |
WO2014149023A1 (en) | 2013-03-15 | 2014-09-25 | Rinand Solutions Llc | Force sensing of inputs through strain analysis |
WO2015033669A1 (ja) * | 2013-09-06 | 2015-03-12 | 日立オートモティブシステムズ株式会社 | 力学量測定装置およびそれを用いた圧力センサ |
CN110134283B (zh) | 2013-10-28 | 2022-10-11 | 苹果公司 | 基于压电的力感测 |
CN103743502B (zh) * | 2013-12-11 | 2016-04-13 | 西安交通大学 | 一种压阻式旋转二分量铣削力传感器 |
PT107353B (pt) * | 2013-12-11 | 2016-01-19 | Inst Politécnico De Leiria | Amplificador mecânico para aplicação em estruturas para medição de extensões |
AU2015100011B4 (en) | 2014-01-13 | 2015-07-16 | Apple Inc. | Temperature compensating transparent force sensor |
JP6295425B2 (ja) * | 2014-05-30 | 2018-03-20 | ユニパルス株式会社 | 歪みゲージ |
CN106461484B (zh) * | 2014-06-09 | 2019-04-12 | 日立汽车系统株式会社 | 力学量测量装置及使用其的压力传感器 |
CN104880144B (zh) * | 2015-06-12 | 2018-06-08 | 合肥鑫晟光电科技有限公司 | 具有显示面板的变形检测功能的电子装置及相应的方法 |
US9612170B2 (en) | 2015-07-21 | 2017-04-04 | Apple Inc. | Transparent strain sensors in an electronic device |
JP6371012B2 (ja) * | 2015-09-30 | 2018-08-08 | 日立オートモティブシステムズ株式会社 | 力学量測定装置およびそれを用いた圧力センサ |
US10209830B2 (en) * | 2016-03-31 | 2019-02-19 | Apple Inc. | Electronic device having direction-dependent strain elements |
IT201600077188A1 (it) | 2016-07-22 | 2018-01-22 | St Microelectronics Srl | Procedimento per compensare effetti di stress di substrato in dispositivi a semiconduttore e corrispondente dispositivo |
CN106020563A (zh) * | 2016-08-09 | 2016-10-12 | 上海天马微电子有限公司 | 显示面板和显示装置 |
US10133418B2 (en) | 2016-09-07 | 2018-11-20 | Apple Inc. | Force sensing in an electronic device using a single layer of strain-sensitive structures |
US10786202B2 (en) | 2016-09-28 | 2020-09-29 | International Business Machines Corporation | Quantifying grip strength and characterizing movement idioms |
US10260981B2 (en) * | 2017-02-06 | 2019-04-16 | Nxp Usa, Inc. | Pressure sensor having sense elements in multiple wheatstone bridges with chained outputs |
US10352792B2 (en) * | 2017-02-15 | 2019-07-16 | Texas Instruments Incorporated | Device and method for on-chip mechanical stress sensing |
US10444091B2 (en) | 2017-04-11 | 2019-10-15 | Apple Inc. | Row column architecture for strain sensing |
EP3410060A1 (de) * | 2017-05-29 | 2018-12-05 | voestalpine Stahl GmbH | Dehnungsmessstreifen und metallband mit einer beschichtung für solch einen dehnungsmessstreifen |
US10309846B2 (en) | 2017-07-24 | 2019-06-04 | Apple Inc. | Magnetic field cancellation for strain sensors |
US10578497B2 (en) | 2017-09-17 | 2020-03-03 | Qualcomm Incorporated | Diode-based temperature sensor |
US10910500B2 (en) * | 2018-02-13 | 2021-02-02 | Stmicroelectronics S.R.L. | Load sensing devices, packages, and systems |
JP7052417B2 (ja) * | 2018-02-28 | 2022-04-12 | セイコーエプソン株式会社 | センサーデバイス、力検出装置およびロボット |
CN108446050B (zh) * | 2018-03-16 | 2021-06-15 | 厦门天马微电子有限公司 | 压力传感器、显示面板、压力检测方法及显示装置 |
US10782818B2 (en) | 2018-08-29 | 2020-09-22 | Apple Inc. | Load cell array for detection of force input to an electronic device enclosure |
JP7467828B2 (ja) * | 2019-03-22 | 2024-04-16 | ヤマハ株式会社 | 歪センサユニット及び伸長量測定部材 |
EP3736552A1 (en) * | 2019-05-08 | 2020-11-11 | Hilti Aktiengesellschaft | Shear sensor collar |
JP6865787B2 (ja) * | 2019-05-30 | 2021-04-28 | 三菱電機株式会社 | 半導体歪検出素子及びmemsアクチュエータデバイス |
US11175359B2 (en) * | 2019-08-28 | 2021-11-16 | Allegro Microsystems, Llc | Reducing voltage non-linearity in a bridge having tunneling magnetoresistance (TMR) elements |
DE102019129411A1 (de) * | 2019-09-12 | 2021-03-18 | Wika Alexander Wiegand Se & Co. Kg | Aufnehmerkörper mit einem Messelement und Herstellungsverfahren für einen Aufnehmerkörper |
US20230141257A1 (en) * | 2020-03-19 | 2023-05-11 | Shenzhen New Degree Technology Co., Ltd. | Strain sensing film, pressure sensor and strain sensing system |
US20220020915A1 (en) * | 2020-07-17 | 2022-01-20 | Texas Instruments Incorporated | On-substrate mechanical stress sensing and compensation |
US11650110B2 (en) * | 2020-11-04 | 2023-05-16 | Honeywell International Inc. | Rosette piezo-resistive gauge circuit for thermally compensated measurement of full stress tensor |
US11796401B2 (en) * | 2021-04-07 | 2023-10-24 | Nano And Advanced Materials Institute Limited | Textile pressure sensor array and pressure distribution mapping system |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3739644A (en) * | 1972-06-30 | 1973-06-19 | Gen Electric | Linearization of differential pressure integral silicon transducer |
JPS5519433B2 (zh) * | 1973-06-11 | 1980-05-26 | ||
JPS5944049B2 (ja) | 1976-10-19 | 1984-10-26 | 株式会社豊田中央研究所 | 脳圧計 |
JPS5595373A (en) | 1979-01-11 | 1980-07-19 | Nissan Motor Co Ltd | Semiconductor pressure sensor |
JPS5660066A (en) * | 1979-10-19 | 1981-05-23 | Nec Corp | Semiconductor strain detector |
JPS5664472A (en) | 1979-10-30 | 1981-06-01 | Nec Corp | Detector for strain by semiconductor |
US4331035A (en) * | 1979-11-13 | 1982-05-25 | Gould Inc. | Geometric balance adjustment of thin film strain gage sensors |
JPS59217375A (ja) * | 1983-05-26 | 1984-12-07 | Toyota Central Res & Dev Lab Inc | 半導体機械−電気変換装置 |
JPH0736444B2 (ja) * | 1986-12-19 | 1995-04-19 | 工業技術院長 | 触覚センサ |
US4897360A (en) * | 1987-12-09 | 1990-01-30 | Wisconsin Alumni Research Foundation | Polysilicon thin film process |
JPH02138840A (ja) * | 1988-08-31 | 1990-05-28 | Ricoh Co Ltd | 力覚センサ |
JPH0777266B2 (ja) * | 1988-12-28 | 1995-08-16 | 株式会社豊田中央研究所 | 半導体歪み検出装置 |
JPH0389130A (ja) * | 1989-08-31 | 1991-04-15 | Nitta Ind Corp | 圧力・力検出装置 |
JPH06303087A (ja) * | 1993-04-16 | 1994-10-28 | Nippon Steel Corp | 高周波回路用基板およびその製造方法ならびにそれを用いた高周波集積回路素子 |
JP3436793B2 (ja) | 1994-03-31 | 2003-08-18 | 株式会社共和電業 | ひずみゲージ |
JPH08213296A (ja) * | 1994-10-20 | 1996-08-20 | Hitachi Ltd | 薄膜製造装置及び半導体装置 |
JP3117925B2 (ja) | 1996-04-19 | 2000-12-18 | 株式会社エスアイアイ・アールディセンター | 半導体加速度センサ |
JP3334537B2 (ja) * | 1996-10-22 | 2002-10-15 | 松下電工株式会社 | 半導体歪み検出装置及びその製造方法 |
JPH10213503A (ja) * | 1997-01-31 | 1998-08-11 | Matsushita Electric Works Ltd | 半導体圧力センサ |
JPH11101701A (ja) * | 1997-09-29 | 1999-04-13 | Tokai Rika Co Ltd | 圧力センサチップ及びその製造方法並びにセンサ機構を有するカテーテル |
JPH11148946A (ja) * | 1997-11-17 | 1999-06-02 | Asahi Chem Ind Co Ltd | 集積化加速度センサ |
JP3368344B2 (ja) * | 1998-11-24 | 2003-01-20 | 学校法人立命館 | 半導体ひずみゲージ及びそれを用いたひずみ測定方法 |
JP4438193B2 (ja) * | 1999-09-24 | 2010-03-24 | 株式会社デンソー | 圧力センサ |
US6422088B1 (en) * | 1999-09-24 | 2002-07-23 | Denso Corporation | Sensor failure or abnormality detecting system incorporated in a physical or dynamic quantity detecting apparatus |
JP2001304997A (ja) * | 2000-04-27 | 2001-10-31 | Toyota Central Res & Dev Lab Inc | 半導体圧力センサ |
JP2002243759A (ja) | 2001-02-13 | 2002-08-28 | Hokuriku Electric Ind Co Ltd | 半導体加速度センサ素子 |
JP4329477B2 (ja) * | 2003-10-06 | 2009-09-09 | 株式会社日立製作所 | ひずみ量測定機能付きボルト |
JP4329478B2 (ja) * | 2003-10-06 | 2009-09-09 | 株式会社日立製作所 | 力学量測定装置 |
US7430920B2 (en) * | 2005-12-16 | 2008-10-07 | Hitachi, Ltd. | Apparatus for measuring a mechanical quantity |
FR2883372B1 (fr) * | 2005-03-17 | 2007-06-29 | Commissariat Energie Atomique | Dispositif de mesure de force par detection resistive a double pont de wheastone |
US7293466B2 (en) * | 2005-07-19 | 2007-11-13 | Hitachi, Ltd. | Bolt with function of measuring strain |
JP4697004B2 (ja) * | 2006-03-29 | 2011-06-08 | 株式会社日立製作所 | 力学量測定装置 |
-
2006
- 2006-03-29 JP JP2006089834A patent/JP4697004B2/ja active Active
-
2007
- 2007-02-08 TW TW096104628A patent/TW200745527A/zh unknown
- 2007-02-09 KR KR1020070013733A patent/KR100844092B1/ko active IP Right Grant
- 2007-02-16 CN CN2007100789578A patent/CN101046368B/zh active Active
- 2007-02-19 EP EP20070003454 patent/EP1840500A3/en not_active Withdrawn
- 2007-02-20 US US11/709,075 patent/US7992448B2/en active Active
-
2011
- 2011-07-06 US US13/177,185 patent/US8365609B2/en active Active
-
2013
- 2013-01-04 US US13/734,326 patent/US8695433B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI686594B (zh) * | 2016-09-14 | 2020-03-01 | 大陸商宸鴻科技(廈門)有限公司 | 壓力感測模組與壓力觸控感測系統 |
US11978680B2 (en) | 2018-12-31 | 2024-05-07 | Micron Technology, Inc. | Method and apparatus for on-chip stress detection |
Also Published As
Publication number | Publication date |
---|---|
JP4697004B2 (ja) | 2011-06-08 |
US8695433B2 (en) | 2014-04-15 |
US20070228500A1 (en) | 2007-10-04 |
US20110259112A1 (en) | 2011-10-27 |
JP2007263781A (ja) | 2007-10-11 |
KR20070098479A (ko) | 2007-10-05 |
EP1840500A3 (en) | 2010-10-27 |
US20130118268A1 (en) | 2013-05-16 |
CN101046368A (zh) | 2007-10-03 |
CN101046368B (zh) | 2012-05-16 |
KR100844092B1 (ko) | 2008-07-04 |
EP1840500A2 (en) | 2007-10-03 |
US7992448B2 (en) | 2011-08-09 |
TWI356902B (zh) | 2012-01-21 |
US8365609B2 (en) | 2013-02-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200745527A (en) | Dynamic quantity measurement device | |
US9437653B2 (en) | Stress sensing devices and methods | |
JP4512125B2 (ja) | 応力分布検出用半導体パッケージ群及びそれを用いた半導体パッケージの応力分布検出方法 | |
TW200623303A (en) | Probe card and the method for adignment and fabricating the same | |
CN102147295B (zh) | 基于磁隧道结器件的温度传感器 | |
TW200604520A (en) | Wheatstone bridge scheme for sensor | |
EP1241475A3 (en) | Blood sugar level measuring device and semiconductor integrated circuit | |
JP2007300264A5 (zh) | ||
TW200703472A (en) | Semiconductor test device | |
CN205194698U (zh) | 集成电路 | |
ATE448487T1 (de) | Magnetfeldempfindliche sensoranordnung | |
WO2009060907A1 (ja) | 半導体装置ならびにそれを備えた電源および演算処理装置 | |
WO2011037243A3 (en) | Cooling control circuit for peltier element | |
US7859328B2 (en) | Substrate stress measuring technique | |
CN101071813B (zh) | 确定工艺环境变化的梯度场的结构及方法 | |
TWI263338B (en) | Semiconductor device and method of manufacturing the same | |
JP2011077073A5 (zh) | ||
TWI585802B (zh) | 保險絲電路及半導體積體電路裝置 | |
JP2007165365A (ja) | 半導体装置及びそのテスト方法 | |
Huber et al. | A bridge-type resistive temperature sensor in CMOS technology with low stress sensitivity | |
TW201636629A (zh) | 感測裝置及其檢查方法 | |
JP5023529B2 (ja) | 半導体装置 | |
TW541426B (en) | Monitoring resistor element and measuring method of relative preciseness of resistor elements | |
CN102543995A (zh) | 负电源集成电路的静电放电保护电路 | |
PL417119A1 (pl) | Czujnik prądowy z półprzewodnikowym elementem pomiarowym zwłaszcza w zastosowaniu do wbudowania w układ scalony |