JP6371012B2 - 力学量測定装置およびそれを用いた圧力センサ - Google Patents
力学量測定装置およびそれを用いた圧力センサ Download PDFInfo
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
- G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2268—Arrangements for correcting or for compensating unwanted effects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
Description
複数の拡散抵抗は前記半導体基板上にマトリックス状に配置され、前記ブリッジ抵抗Rv1,Rv2は前記マトリックスの奇数列に配置された前記複数の拡散抵抗が選択的に直列接続されたものであり、前記ブリッジ抵抗Rh1,Rh2は前記マトリックスの偶数列に配置された前記複数の拡散抵抗が選択的に直列接続されたものである力学量測定装置が、開示されている。特許文献2によると、被測定物の温度変化によって発生する応力や、半導体基板上の熱分布や、拡散抵抗の不純物のドーズ量勾配に起因するブリッジ回路のオフセット出力の発生を防ぐことができるとされている。
GAIN:アンプ回路の増幅率、
a:電流に平行な方向のゲージ率、b:電流に垂直な方向のゲージ率、
VDD:電源電圧、εx:X方向ひずみ、εy:Y方向ひずみ、
である。
KB:ボルツマン定数、T:温度、Δf:帯域幅、R:抵抗値
である。
ここでは、本発明の実施形態1に係る力学量測定装置の技術的思想について図6Aから図7Bを参照しながら説明する。図6Aは、実施形態1に係る力学量測定装置の概要を示す平面模式図であり、本例においては模式的に示すため、抵抗体以外の配線パターン等は省略している。また、図6Bはその回路構成図の概略を示したものである。
、ほぼ同一の出力感度を得ることが可能となる。
ここでは、前述した実施形態1の別の例について図8Aおよび図8Bを参照しながら説明する。
ここでは、前述した実施形態1、2の別の例について図9A,図9Bを参照しながら説明する。
ここでは、本発明に係る圧力センサについて図10を参照しながら説明する。本発明に係る圧力センサは、ひずみセンサとして実施形態1〜3に係る力学量測定装置を用いていることに特徴がある。図10は、本発明に係る圧力センサの一例を示す断面模式図である。
Claims (8)
- 一つの半導体基板の主表面に形成された複数の不純物拡散抵抗体によってそれぞれ構成される複数のホイートストンブリッジと、
前記複数のホイーストンブリッジの出力差動電圧を受けて加算する加算回路とを備え、
測定する領域内の平均のひずみ量に応じて前記複数のホイートストンブリッジの出力信号成分である前記出力差動電圧がほぼ同一の感度で増加するように、前記複数の不純物拡散抵抗体が互いに近接されて配置され、
前記加算回路の加算結果により前記半導体基板の前記主表面上で直交するx軸方向に生じるひずみ量とy軸方向に生じるひずみ量との差分を検出することを特徴とする力学量測定装置。 - 請求項1に記載の力学量測定装置において、
前記半導体基板の前記主表面は、単結晶シリコンの{100}面であることを特徴とする力学量測定装置。 - 請求項2に記載の力学量測定装置において、
前記x軸方向と前記y軸方向とがシリコン基板の<110>方向と一致し、
前記複数のホイーストンブリッジは、前記複数の不純物拡散抵抗体として、それぞれ、<110>方向に電流を流す4本の抵抗を備え、前記4本の抵抗が、長手方向がy軸方向で、y軸に平行に電流を流す向きに配置されたP型拡散抵抗からなる第1のy軸方向抵抗及び第2のy軸方向抵抗と、長手方向がx軸方向で、x軸に平行に電流を流す向きに配置されたP型拡散抵抗からなる第1のx軸方向抵抗及び第2のx軸方向抵抗とで構成されることを特徴とする力学量測定装置。 - 請求項3に記載の力学量測定装置において、
前記複数のホイーストンブリッジを構成する各抵抗は、その長手方向の長さより短い間隔で互いに隣り合って配置されていることを特徴とする力学量測定装置。 - 請求項3に記載の力学量測定装置において、
前記加算回路とその出力端子とを前記半導体基板の前記主表面上に配置したことを特徴とする力学量測定装置。 - 金属製のダイアフラム上に半導体ひずみセンサが接合された圧力センサにおいて、
前記半導体ひずみセンサは、請求項1に記載の力学量測定装置であることを特徴とする圧力センサ。 - 請求項6に記載の圧力センサにおいて、
前記金属製のダイアフラム上に前記半導体ひずみセンサを、はんだ接合で接合したことを特徴とする圧力センサ。 - 請求項6に記載の圧力センサにおいて、
前記圧力センサは、自動車エンジン用の圧力センサであることを特徴とする圧力センサ。
Applications Claiming Priority (3)
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JP2015192508 | 2015-09-30 | ||
JP2015192508 | 2015-09-30 | ||
PCT/JP2016/072251 WO2017056671A1 (ja) | 2015-09-30 | 2016-07-29 | 力学量測定装置およびそれを用いた圧力センサ |
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JPWO2017056671A1 JPWO2017056671A1 (ja) | 2018-04-12 |
JP6371012B2 true JP6371012B2 (ja) | 2018-08-08 |
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Country | Link |
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US (1) | US10408692B2 (ja) |
EP (1) | EP3358325A4 (ja) |
JP (1) | JP6371012B2 (ja) |
CN (1) | CN108027291B (ja) |
WO (1) | WO2017056671A1 (ja) |
Cited By (1)
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JP7088067B2 (ja) | 2019-02-15 | 2022-06-21 | Tdk株式会社 | 圧力センサ |
Families Citing this family (6)
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US10352792B2 (en) * | 2017-02-15 | 2019-07-16 | Texas Instruments Incorporated | Device and method for on-chip mechanical stress sensing |
EP3746756A4 (en) * | 2018-02-01 | 2021-11-03 | Electric Power Research Institute, Inc. | DEVICE FOR STRAIN MEASUREMENT AND METHOD OF MANUFACTURING AND USING THE SAME |
DE102019129411A1 (de) * | 2019-09-12 | 2021-03-18 | Wika Alexander Wiegand Se & Co. Kg | Aufnehmerkörper mit einem Messelement und Herstellungsverfahren für einen Aufnehmerkörper |
CN111780661B (zh) * | 2020-07-22 | 2021-10-08 | 华中科技大学 | 一种柔性电子器件弯曲应变的精准测量方法及系统 |
CN111928771A (zh) * | 2020-08-06 | 2020-11-13 | 广东高标电子科技有限公司 | 一种应变检测装置及应变检测方法 |
US20220090905A1 (en) * | 2020-09-23 | 2022-03-24 | Sentons Inc. | Coordination of multiple strain sensors |
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GB8413788D0 (en) * | 1984-05-30 | 1984-07-04 | Trw Probe Electronics Co Ltd | Strain transducers |
JPH0746065B2 (ja) * | 1985-03-25 | 1995-05-17 | 株式会社日本自動車部品総合研究所 | 高圧用圧力検出器 |
FR2823998B1 (fr) * | 2001-04-25 | 2004-01-02 | Centre Nat Rech Scient | Matrice de biocapteurs et son procede de fabrication |
JP4007128B2 (ja) * | 2002-03-22 | 2007-11-14 | 株式会社豊田中央研究所 | 圧力センサ及びセンサユニット |
JP4617943B2 (ja) * | 2005-03-18 | 2011-01-26 | 株式会社日立製作所 | 力学量測定装置 |
JP4697004B2 (ja) * | 2006-03-29 | 2011-06-08 | 株式会社日立製作所 | 力学量測定装置 |
JP2011158317A (ja) * | 2010-01-29 | 2011-08-18 | Panasonic Electric Works Co Ltd | 圧力センサ |
JP5427733B2 (ja) * | 2010-08-27 | 2014-02-26 | 株式会社日立製作所 | 力学量測定装置 |
JP5843850B2 (ja) * | 2011-04-21 | 2016-01-13 | 株式会社日立製作所 | 力学量測定装置、半導体装置、剥離検知装置およびモジュール |
JP5701807B2 (ja) | 2012-03-29 | 2015-04-15 | 株式会社東芝 | 圧力センサ及びマイクロフォン |
JP5761536B2 (ja) * | 2013-04-24 | 2015-08-12 | 横河電機株式会社 | 力変換素子 |
WO2015033669A1 (ja) * | 2013-09-06 | 2015-03-12 | 日立オートモティブシステムズ株式会社 | 力学量測定装置およびそれを用いた圧力センサ |
CN106461484B (zh) * | 2014-06-09 | 2019-04-12 | 日立汽车系统株式会社 | 力学量测量装置及使用其的压力传感器 |
JP5865986B2 (ja) * | 2014-12-04 | 2016-02-17 | 株式会社東芝 | 圧力センサ及びマイクロフォン |
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2016
- 2016-07-29 JP JP2017542964A patent/JP6371012B2/ja active Active
- 2016-07-29 CN CN201680053899.0A patent/CN108027291B/zh active Active
- 2016-07-29 US US15/577,394 patent/US10408692B2/en active Active
- 2016-07-29 WO PCT/JP2016/072251 patent/WO2017056671A1/ja active Application Filing
- 2016-07-29 EP EP16850848.9A patent/EP3358325A4/en active Pending
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JP7088067B2 (ja) | 2019-02-15 | 2022-06-21 | Tdk株式会社 | 圧力センサ |
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WO2017056671A1 (ja) | 2017-04-06 |
CN108027291B (zh) | 2020-04-24 |
JPWO2017056671A1 (ja) | 2018-04-12 |
US10408692B2 (en) | 2019-09-10 |
CN108027291A (zh) | 2018-05-11 |
EP3358325A1 (en) | 2018-08-08 |
US20180164168A1 (en) | 2018-06-14 |
EP3358325A4 (en) | 2020-11-25 |
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