WO2009060907A1 - 半導体装置ならびにそれを備えた電源および演算処理装置 - Google Patents

半導体装置ならびにそれを備えた電源および演算処理装置 Download PDF

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Publication number
WO2009060907A1
WO2009060907A1 PCT/JP2008/070225 JP2008070225W WO2009060907A1 WO 2009060907 A1 WO2009060907 A1 WO 2009060907A1 JP 2008070225 W JP2008070225 W JP 2008070225W WO 2009060907 A1 WO2009060907 A1 WO 2009060907A1
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WO
WIPO (PCT)
Prior art keywords
power supply
semiconductor device
node
resistance
transistor
Prior art date
Application number
PCT/JP2008/070225
Other languages
English (en)
French (fr)
Inventor
Kenji Yamamoto
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to JP2009540084A priority Critical patent/JP5355414B2/ja
Priority to US12/594,038 priority patent/US7965128B2/en
Priority to CN2008800159311A priority patent/CN101681881B/zh
Publication of WO2009060907A1 publication Critical patent/WO2009060907A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

　半導体装置（３０１）は、第１の電源電圧が供給される第１電源ノードに結合された第１電極と、第２電極とを有し、温度検出素子（ＴＤ１～ＴＤ１２）に基準電流を供給するトランジスタ（Ｍ２）と、第１電源ノードに結合された電位固定ノードを有する第１半導体領域と、トランジスタ（Ｍ２）の第２電極に結合された第１抵抗ノードと、第２の電源電圧が供給される第２電源ノードに結合された第２抵抗ノードとを有し、第１半導体領域の表面に形成された第２半導体領域とを含む拡散抵抗（Ｒ１）と、電位固定ノードおよび第２抵抗ノードを介して流れる電流と略同じ大きさでかつ同じ方向の電流を、拡散抵抗（Ｒ１）を介さずにトランジスタ（Ｍ２）を介して流すリーク電流補正回路（ＣＲ１）とを備える。
PCT/JP2008/070225 2007-11-08 2008-11-06 半導体装置ならびにそれを備えた電源および演算処理装置 WO2009060907A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009540084A JP5355414B2 (ja) 2007-11-08 2008-11-06 半導体装置ならびにそれを備えた電源および演算処理装置
US12/594,038 US7965128B2 (en) 2007-11-08 2008-11-06 Semiconductor device, and power source and processor provided with the same
CN2008800159311A CN101681881B (zh) 2007-11-08 2008-11-06 半导体装置以及具备该半导体装置的电源和运算处理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007291101 2007-11-08
JP2007-291101 2007-11-08

Publications (1)

Publication Number Publication Date
WO2009060907A1 true WO2009060907A1 (ja) 2009-05-14

Family

ID=40625794

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/070225 WO2009060907A1 (ja) 2007-11-08 2008-11-06 半導体装置ならびにそれを備えた電源および演算処理装置

Country Status (4)

Country Link
US (1) US7965128B2 (ja)
JP (1) JP5355414B2 (ja)
CN (1) CN101681881B (ja)
WO (1) WO2009060907A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101911367B1 (ko) * 2010-09-27 2018-10-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기준 전류 생성 회로, 기준 전압 생성 회로, 및 온도 검출 회로
JP7103742B1 (ja) * 2021-09-22 2022-07-20 ウィンボンド エレクトロニクス コーポレーション 電圧生成回路

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2918504B1 (fr) * 2007-07-06 2009-11-27 St Microelectronics Sa Resistance integree diffusee
JP2010014445A (ja) * 2008-07-01 2010-01-21 Seiko Instruments Inc 半導体温度センサ
US10614860B1 (en) * 2019-04-15 2020-04-07 Micron Technology, Inc. Systems for discharging leakage current over a range of process, voltage, temperature (PVT) conditions
US11309435B2 (en) * 2020-03-09 2022-04-19 Globalfoundries U.S. Inc. Bandgap reference circuit including vertically stacked active SOI devices
CN113391667A (zh) * 2020-03-12 2021-09-14 恩智浦美国有限公司 偏置电流发生电路

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02260914A (ja) * 1989-03-31 1990-10-23 Mitsubishi Electric Corp 半導体集積回路
JPH06169222A (ja) * 1992-11-30 1994-06-14 Nec Kansai Ltd 過熱検出回路
JP2001264176A (ja) * 2000-01-12 2001-09-26 Japan Science & Technology Corp 温度測定装置、熱型赤外線イメージセンサ及び温度測定方法
JP2002368110A (ja) * 2001-06-08 2002-12-20 Rohm Co Ltd 半導体集積回路装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5604467A (en) * 1993-02-11 1997-02-18 Benchmarg Microelectronics Temperature compensated current source operable to drive a current controlled oscillator
SG86389A1 (en) * 1999-04-21 2002-02-19 Em Microelectronic Marin Sa Temperature level detection circuit
JP4276812B2 (ja) * 2002-03-20 2009-06-10 株式会社リコー 温度検出回路
JP4665452B2 (ja) 2004-08-03 2011-04-06 富士電機システムズ株式会社 温度検知回路、および温度検知回路を備えたパワー半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02260914A (ja) * 1989-03-31 1990-10-23 Mitsubishi Electric Corp 半導体集積回路
JPH06169222A (ja) * 1992-11-30 1994-06-14 Nec Kansai Ltd 過熱検出回路
JP2001264176A (ja) * 2000-01-12 2001-09-26 Japan Science & Technology Corp 温度測定装置、熱型赤外線イメージセンサ及び温度測定方法
JP2002368110A (ja) * 2001-06-08 2002-12-20 Rohm Co Ltd 半導体集積回路装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101911367B1 (ko) * 2010-09-27 2018-10-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기준 전류 생성 회로, 기준 전압 생성 회로, 및 온도 검출 회로
JP7103742B1 (ja) * 2021-09-22 2022-07-20 ウィンボンド エレクトロニクス コーポレーション 電圧生成回路
TWI792988B (zh) * 2021-09-22 2023-02-11 華邦電子股份有限公司 電壓生成電路及半導體裝置

Also Published As

Publication number Publication date
CN101681881A (zh) 2010-03-24
US7965128B2 (en) 2011-06-21
JPWO2009060907A1 (ja) 2011-03-24
US20100109752A1 (en) 2010-05-06
CN101681881B (zh) 2011-12-28
JP5355414B2 (ja) 2013-11-27

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