WO2008120480A1 - 半導体集積回路 - Google Patents

半導体集積回路 Download PDF

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Publication number
WO2008120480A1
WO2008120480A1 PCT/JP2008/050509 JP2008050509W WO2008120480A1 WO 2008120480 A1 WO2008120480 A1 WO 2008120480A1 JP 2008050509 W JP2008050509 W JP 2008050509W WO 2008120480 A1 WO2008120480 A1 WO 2008120480A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor integrated
integrated circuit
resistance change
change element
oxide resistance
Prior art date
Application number
PCT/JP2008/050509
Other languages
English (en)
French (fr)
Inventor
Tadahiko Sugibayashi
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to US12/593,423 priority Critical patent/US8254157B2/en
Priority to JP2009507420A priority patent/JP5146847B2/ja
Publication of WO2008120480A1 publication Critical patent/WO2008120480A1/ja

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0078—Write using current through the cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/32—Material having simple binary metal oxide structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/34—Material includes an oxide or a nitride
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

　本発明に係る半導体集積回路は、酸化物抵抗変化素子１０と、酸化物抵抗変化素子１０に書き込み電流ＩＷ０，ＩＷ１を供給する定電流源回路２０と、書き込み電流ＩＷ０，ＩＷ１が流れる経路の電圧をクランプする電圧クランパ３０と、を備える。電圧クランパ３０は、定電流源回路２０と酸化物抵抗変化素子１０との間の経路に対して並列に設けられる。
PCT/JP2008/050509 2007-03-29 2008-01-17 半導体集積回路 WO2008120480A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/593,423 US8254157B2 (en) 2007-03-29 2008-01-17 Semiconductor integrated circuit
JP2009507420A JP5146847B2 (ja) 2007-03-29 2008-01-17 半導体集積回路

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-088081 2007-03-29
JP2007088081 2007-03-29

Publications (1)

Publication Number Publication Date
WO2008120480A1 true WO2008120480A1 (ja) 2008-10-09

Family

ID=39808066

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050509 WO2008120480A1 (ja) 2007-03-29 2008-01-17 半導体集積回路

Country Status (3)

Country Link
US (1) US8254157B2 (ja)
JP (1) JP5146847B2 (ja)
WO (1) WO2008120480A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010146612A (ja) * 2008-12-16 2010-07-01 Sharp Corp 不揮発性半導体装置及びその負荷抵抗の温度補償回路
CN101833991A (zh) * 2009-03-12 2010-09-15 株式会社东芝 半导体存储装置
JP2011054246A (ja) * 2009-09-02 2011-03-17 Toshiba Corp 抵抗変化メモリ装置
JPWO2011135984A1 (ja) * 2010-04-28 2013-07-18 株式会社日立製作所 半導体記憶装置
US8625328B2 (en) 2009-10-15 2014-01-07 Panasonic Corporation Variable resistance nonvolatile storage device
US8675387B2 (en) 2009-07-28 2014-03-18 Panasonic Corporation Variable resistance nonvolatile memory device and programming method for same
US8767437B2 (en) 2011-03-25 2014-07-01 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device operating stably and method of control therein

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009271999A (ja) * 2008-05-07 2009-11-19 Toshiba Corp 抵抗変化メモリ装置
KR20120063136A (ko) * 2010-12-07 2012-06-15 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 구동방법
US8937841B2 (en) * 2012-05-16 2015-01-20 SK Hynix Inc. Driver for semiconductor memory and method thereof
KR101938677B1 (ko) * 2012-07-06 2019-01-15 에스케이하이닉스 주식회사 반도체 메모리용 구동장치 및 방법
KR101929521B1 (ko) * 2012-05-16 2018-12-14 에스케이하이닉스 주식회사 반도체 메모리용 구동장치 및 방법
US9558819B1 (en) * 2015-08-13 2017-01-31 Arm Ltd. Method, system and device for non-volatile memory device operation
US10096361B2 (en) 2015-08-13 2018-10-09 Arm Ltd. Method, system and device for non-volatile memory device operation
US9514814B1 (en) 2015-08-13 2016-12-06 Arm Ltd. Memory write driver, method and system
KR102674030B1 (ko) * 2019-01-18 2024-06-13 삼성전자주식회사 메모리 장치 및 그 동작 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006294182A (ja) * 2005-04-14 2006-10-26 Renesas Technology Corp 不揮発性半導体記憶装置
JP2006351779A (ja) * 2005-06-15 2006-12-28 Sony Corp メモリセル及び記憶装置
WO2006137110A1 (ja) * 2005-06-20 2006-12-28 Fujitsu Limited 不揮発性半導体記憶装置及びその書き込み方法
WO2007074504A1 (ja) * 2005-12-26 2007-07-05 Fujitsu Limited 不揮発性半導体記憶装置及びその書き込み方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3210741A (en) * 1961-05-03 1965-10-05 Sylvania Electric Prod Drive circuit for magnetic elements
JP2004118923A (ja) * 2002-09-25 2004-04-15 Toshiba Corp 磁気ランダムアクセスメモリ
US7286393B2 (en) * 2005-03-31 2007-10-23 Honeywell International Inc. System and method for hardening MRAM bits
KR100647333B1 (ko) * 2005-08-31 2006-11-23 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
CN101548333B (zh) * 2006-11-30 2013-01-02 富士通株式会社 非易失性半导体存储器件及其写入、读取方法和删除方法
US7916516B2 (en) * 2007-02-23 2011-03-29 Panasonic Corporation Nonvolatile memory apparatus and method for writing data in nonvolatile memory apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006294182A (ja) * 2005-04-14 2006-10-26 Renesas Technology Corp 不揮発性半導体記憶装置
JP2006351779A (ja) * 2005-06-15 2006-12-28 Sony Corp メモリセル及び記憶装置
WO2006137110A1 (ja) * 2005-06-20 2006-12-28 Fujitsu Limited 不揮発性半導体記憶装置及びその書き込み方法
WO2007074504A1 (ja) * 2005-12-26 2007-07-05 Fujitsu Limited 不揮発性半導体記憶装置及びその書き込み方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010146612A (ja) * 2008-12-16 2010-07-01 Sharp Corp 不揮発性半導体装置及びその負荷抵抗の温度補償回路
CN101833991A (zh) * 2009-03-12 2010-09-15 株式会社东芝 半导体存储装置
JP2010211898A (ja) * 2009-03-12 2010-09-24 Toshiba Corp 半導体記憶装置
US8139394B2 (en) 2009-03-12 2012-03-20 Kabushiki Kaisha Toshiba Semiconductor storage device
US8582346B2 (en) 2009-03-12 2013-11-12 Kabushiki Kaisha Toshiba Semiconductor storage device
US8675387B2 (en) 2009-07-28 2014-03-18 Panasonic Corporation Variable resistance nonvolatile memory device and programming method for same
JP2011054246A (ja) * 2009-09-02 2011-03-17 Toshiba Corp 抵抗変化メモリ装置
US8625328B2 (en) 2009-10-15 2014-01-07 Panasonic Corporation Variable resistance nonvolatile storage device
JPWO2011135984A1 (ja) * 2010-04-28 2013-07-18 株式会社日立製作所 半導体記憶装置
US8750032B2 (en) 2010-04-28 2014-06-10 Hitachi, Ltd. Semiconductor recording device
US8767437B2 (en) 2011-03-25 2014-07-01 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device operating stably and method of control therein

Also Published As

Publication number Publication date
US20100118591A1 (en) 2010-05-13
JPWO2008120480A1 (ja) 2010-07-15
US8254157B2 (en) 2012-08-28
JP5146847B2 (ja) 2013-02-20

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