TW200706710A - Process for producing group iii element nitride crystal, apparatus for producing group iii element nitride crystal, and group iii element nitride crystal - Google Patents
Process for producing group iii element nitride crystal, apparatus for producing group iii element nitride crystal, and group iii element nitride crystalInfo
- Publication number
- TW200706710A TW200706710A TW095116971A TW95116971A TW200706710A TW 200706710 A TW200706710 A TW 200706710A TW 095116971 A TW095116971 A TW 095116971A TW 95116971 A TW95116971 A TW 95116971A TW 200706710 A TW200706710 A TW 200706710A
- Authority
- TW
- Taiwan
- Prior art keywords
- group iii
- iii element
- element nitride
- nitride crystal
- producing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/12—Salt solvents, e.g. flux growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/10—Metal solvents
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005139451 | 2005-05-12 | ||
JP2005231877A JP4878793B2 (ja) | 2005-08-10 | 2005-08-10 | 結晶成長装置および製造方法 |
JP2005231966A JP4878794B2 (ja) | 2005-08-10 | 2005-08-10 | 結晶成長装置および製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200706710A true TW200706710A (en) | 2007-02-16 |
TWI329682B TWI329682B (zh) | 2010-09-01 |
Family
ID=37396658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095116971A TW200706710A (en) | 2005-05-12 | 2006-05-12 | Process for producing group iii element nitride crystal, apparatus for producing group iii element nitride crystal, and group iii element nitride crystal |
Country Status (7)
Country | Link |
---|---|
US (1) | US8888912B2 (zh) |
EP (1) | EP1881094B8 (zh) |
KR (1) | KR101235449B1 (zh) |
CN (1) | CN101175875B (zh) |
CA (1) | CA2608102C (zh) |
TW (1) | TW200706710A (zh) |
WO (1) | WO2006121152A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US8101020B2 (en) * | 2005-10-14 | 2012-01-24 | Ricoh Company, Ltd. | Crystal growth apparatus and manufacturing method of group III nitride crystal |
US20070215034A1 (en) | 2006-03-14 | 2007-09-20 | Hirokazu Iwata | Crystal preparing device, crystal preparing method, and crystal |
JP2012012259A (ja) * | 2010-07-01 | 2012-01-19 | Ricoh Co Ltd | 窒化物結晶およびその製造方法 |
JP5729182B2 (ja) | 2010-08-31 | 2015-06-03 | 株式会社リコー | n型III族窒化物単結晶の製造方法、n型III族窒化物単結晶および結晶基板 |
JP5842490B2 (ja) | 2011-09-14 | 2016-01-13 | 株式会社リコー | 13族窒化物結晶、及び13族窒化物結晶基板 |
JP5953683B2 (ja) | 2011-09-14 | 2016-07-20 | 株式会社リコー | 13族窒化物結晶、及び13族窒化物結晶基板 |
JP5953684B2 (ja) | 2011-09-14 | 2016-07-20 | 株式会社リコー | 13族窒化物結晶の製造方法 |
JP6098028B2 (ja) | 2011-09-14 | 2017-03-22 | 株式会社リコー | 窒化ガリウム結晶、13族窒化物結晶、13族窒化物結晶基板および製造方法 |
CN103014867B (zh) * | 2012-12-26 | 2016-04-06 | 上海昀丰新能源科技有限公司 | 一种氮化铝晶体生长制备炉 |
CN107541783A (zh) * | 2017-08-21 | 2018-01-05 | 苏州奥趋光电技术有限公司 | 一种氮化铝单晶生长方法 |
CN111821927B (zh) * | 2019-04-17 | 2021-12-07 | 北京大学 | 一种制备微/纳结构材料的方法及装置 |
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JPH04192220A (ja) | 1990-11-27 | 1992-07-10 | Yazaki Corp | 圧接型ワイヤハーネスの製造方法 |
US5868837A (en) | 1997-01-17 | 1999-02-09 | Cornell Research Foundation, Inc. | Low temperature method of preparing GaN single crystals |
TW519551B (en) | 1997-06-11 | 2003-02-01 | Hitachi Cable | Methods of fabricating nitride crystals and nitride crystals obtained therefrom |
JP3788037B2 (ja) | 1998-06-18 | 2006-06-21 | 住友電気工業株式会社 | GaN単結晶基板 |
JP4056664B2 (ja) | 1999-10-18 | 2008-03-05 | 株式会社リコー | Iii族窒化物結晶の製造方法 |
JP4094780B2 (ja) | 1999-08-24 | 2008-06-04 | 株式会社リコー | 結晶成長方法および結晶成長装置並びにiii族窒化物結晶の製造方法および結晶製造装置 |
JP4011828B2 (ja) | 1999-06-09 | 2007-11-21 | 株式会社リコー | Iii族窒化物結晶の結晶成長方法及びiii族窒化物結晶の製造方法 |
US6592663B1 (en) | 1999-06-09 | 2003-07-15 | Ricoh Company Ltd. | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate |
JP3929657B2 (ja) | 1999-09-29 | 2007-06-13 | 株式会社リコー | 結晶成長方法およびiii族窒化物結晶の製造方法 |
JP3868156B2 (ja) | 1999-08-24 | 2007-01-17 | 株式会社リコー | 結晶成長方法および結晶成長装置およびiii族窒化物結晶 |
JP4298153B2 (ja) | 2000-10-19 | 2009-07-15 | 株式会社リコー | Iii族窒化物結晶の製造方法 |
US6780239B2 (en) | 2000-10-19 | 2004-08-24 | Ricoh Company, Ltd. | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device |
JP3966682B2 (ja) * | 2000-10-19 | 2007-08-29 | 株式会社リコー | 結晶成長方法、結晶成長装置、結晶製造装置および結晶の製造方法 |
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JP4640899B2 (ja) | 2001-06-28 | 2011-03-02 | 株式会社リコー | Iii族窒化物結晶成長装置 |
JP4381638B2 (ja) | 2001-11-26 | 2009-12-09 | 株式会社リコー | Iii族窒化物結晶の結晶製造方法 |
JP4245822B2 (ja) | 2001-05-01 | 2009-04-02 | 株式会社リコー | Iii族窒化物結晶の製造方法 |
JP2003160398A (ja) | 2001-11-21 | 2003-06-03 | Ricoh Co Ltd | Iii族窒化物結晶成長方法およびiii族窒化物結晶成長装置 |
JP4551026B2 (ja) | 2001-05-17 | 2010-09-22 | 株式会社リコー | Iii族窒化物結晶成長装置およびiii族窒化物結晶成長方法 |
JP4048476B2 (ja) | 2001-05-22 | 2008-02-20 | 株式会社リコー | 観察機能付iii族窒化物結晶製造装置および窒化物結晶製造方法 |
US6949140B2 (en) | 2001-12-05 | 2005-09-27 | Ricoh Company, Ltd. | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device |
JP2003238296A (ja) | 2001-12-05 | 2003-08-27 | Ricoh Co Ltd | Iii族窒化物結晶成長方法およびiii族窒化物結晶成長装置 |
JP4278330B2 (ja) | 2002-01-10 | 2009-06-10 | 株式会社リコー | Iii族窒化物結晶製造方法およびiii族窒化物結晶製造装置 |
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CN100535200C (zh) | 2004-04-27 | 2009-09-02 | 松下电器产业株式会社 | Ⅲ族元素氮化物结晶制造装置以及ⅲ族元素氮化物结晶制造方法 |
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-
2006
- 2006-05-12 WO PCT/JP2006/309552 patent/WO2006121152A1/ja active Application Filing
- 2006-05-12 EP EP06732533.2A patent/EP1881094B8/en not_active Ceased
- 2006-05-12 TW TW095116971A patent/TW200706710A/zh not_active IP Right Cessation
- 2006-05-12 CN CN2006800160837A patent/CN101175875B/zh not_active Expired - Fee Related
- 2006-05-12 US US11/914,193 patent/US8888912B2/en not_active Expired - Fee Related
- 2006-05-12 KR KR1020077026229A patent/KR101235449B1/ko active IP Right Grant
- 2006-05-12 CA CA2608102A patent/CA2608102C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR101235449B1 (ko) | 2013-02-20 |
EP1881094A4 (en) | 2011-11-23 |
EP1881094B1 (en) | 2014-04-16 |
KR20070119752A (ko) | 2007-12-20 |
TWI329682B (zh) | 2010-09-01 |
EP1881094A1 (en) | 2008-01-23 |
CN101175875B (zh) | 2010-12-15 |
CA2608102A1 (en) | 2006-11-16 |
US8888912B2 (en) | 2014-11-18 |
WO2006121152A1 (ja) | 2006-11-16 |
US20090249997A1 (en) | 2009-10-08 |
EP1881094B8 (en) | 2014-08-27 |
CA2608102C (en) | 2011-03-15 |
CN101175875A (zh) | 2008-05-07 |
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MM4A | Annulment or lapse of patent due to non-payment of fees |