CN103014867B - 一种氮化铝晶体生长制备炉 - Google Patents
一种氮化铝晶体生长制备炉 Download PDFInfo
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- CN103014867B CN103014867B CN201210576766.5A CN201210576766A CN103014867B CN 103014867 B CN103014867 B CN 103014867B CN 201210576766 A CN201210576766 A CN 201210576766A CN 103014867 B CN103014867 B CN 103014867B
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- aluminum nitride
- nitride crystal
- heating unit
- crystal growth
- tubular band
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CN103014867A CN103014867A (zh) | 2013-04-03 |
CN103014867B true CN103014867B (zh) | 2016-04-06 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107460547B (zh) * | 2017-09-12 | 2019-11-15 | 中国电子科技集团公司第四十六研究所 | 一种pvt法氮化铝晶体生长炉用复合保温屏及生成方法 |
CN111188091B (zh) * | 2020-02-17 | 2021-09-03 | 山东大学 | 一种用于电阻法氮化铝晶体生长炉的热场及其装配方法 |
CN113866815B (zh) * | 2020-06-30 | 2024-04-02 | 天津大学 | 蒽晶体及其制备方法和应用 |
CN111676514A (zh) * | 2020-07-23 | 2020-09-18 | 奥趋光电技术(杭州)有限公司 | 一种大温差晶体生长炉及制备高质量氮化铝单晶的方法 |
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CN201411510Y (zh) * | 2009-06-26 | 2010-02-24 | 哈尔滨工大奥瑞德光电技术有限公司 | 一种用于大尺寸蓝宝石单晶生长炉的鸟笼状电阻发热体 |
CN201962419U (zh) * | 2011-02-24 | 2011-09-07 | 浙江昀丰新能源科技有限公司 | 一种蓝宝石单晶炉 |
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TW200706710A (en) * | 2005-05-12 | 2007-02-16 | Ricoh Co Ltd | Process for producing group iii element nitride crystal, apparatus for producing group iii element nitride crystal, and group iii element nitride crystal |
JP4830976B2 (ja) * | 2007-05-30 | 2011-12-07 | 豊田合成株式会社 | Iii族窒化物半導体製造装置 |
CN203049096U (zh) * | 2012-12-26 | 2013-07-10 | 上海昀丰新能源科技有限公司 | 一种氮化铝晶体生长制备炉 |
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CN201411510Y (zh) * | 2009-06-26 | 2010-02-24 | 哈尔滨工大奥瑞德光电技术有限公司 | 一种用于大尺寸蓝宝石单晶生长炉的鸟笼状电阻发热体 |
CN201962419U (zh) * | 2011-02-24 | 2011-09-07 | 浙江昀丰新能源科技有限公司 | 一种蓝宝石单晶炉 |
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Effective date of registration: 20160823 Address after: 015000, room 112, building 1, Fuyuan North Road, Bayannaoer economic and Technological Development Zone, the Inner Mongolia Autonomous Region, Bayannaoer Patentee after: Inner Mongolia Heng Heng crystal material Co., Ltd. Address before: 201315, room 5545, building 2, building 499, Cambridge Italy Road, Shanghai, Pudong New Area, Zhenkang, A Patentee before: Shanghai Yunfeng New Energy Technology Co., Ltd. |
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Address after: 015000 South Hetao street and East Fuyuan Road, Bayannaoer Economic Development Zone, Bayannur City, Inner Mongolia Autonomous Region (Fengshou village, Bayi township) Patentee after: INNER MONGOLIA EVERGREAT CRYSTAL MATERIAL Co.,Ltd. Address before: 015000, room 112, building 1, Fuyuan North Road, Bayannaoer economic and Technological Development Zone, the Inner Mongolia Autonomous Region, Bayannaoer Patentee before: INNER MONGOLIA EVERGREAT CRYSTAL MATERIAL Co.,Ltd. |
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Denomination of invention: An AlN crystal growth furnace Effective date of registration: 20200929 Granted publication date: 20160406 Pledgee: Industrial and Commercial Bank of China Limited Bayannur Linhe sub branch Pledgor: INNER MONGOLIA EVERGREAT CRYSTAL MATERIAL Co.,Ltd. Registration number: Y2020150000063 |
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