CN207435586U - 一种生长大尺寸碳化硅单晶的热场结构 - Google Patents
一种生长大尺寸碳化硅单晶的热场结构 Download PDFInfo
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107604439A (zh) * | 2017-10-26 | 2018-01-19 | 哈尔滨奥瑞德光电技术有限公司 | 一种生长大尺寸碳化硅单晶的热场结构 |
CN110331437A (zh) * | 2019-07-11 | 2019-10-15 | 浙江博蓝特半导体科技股份有限公司 | 碳化硅单晶生长装置及制造碳化硅单晶的方法 |
CN110499532A (zh) * | 2019-09-26 | 2019-11-26 | 衡水学院 | 快速制备碳化硅的装置 |
CN110512281A (zh) * | 2019-09-26 | 2019-11-29 | 衡水学院 | 快速制备碳化硅的方法 |
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2017
- 2017-10-26 CN CN201721400309.5U patent/CN207435586U/zh active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107604439A (zh) * | 2017-10-26 | 2018-01-19 | 哈尔滨奥瑞德光电技术有限公司 | 一种生长大尺寸碳化硅单晶的热场结构 |
CN110331437A (zh) * | 2019-07-11 | 2019-10-15 | 浙江博蓝特半导体科技股份有限公司 | 碳化硅单晶生长装置及制造碳化硅单晶的方法 |
CN110499532A (zh) * | 2019-09-26 | 2019-11-26 | 衡水学院 | 快速制备碳化硅的装置 |
CN110512281A (zh) * | 2019-09-26 | 2019-11-29 | 衡水学院 | 快速制备碳化硅的方法 |
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Denomination of utility model: Thermal field structure for growing large-sized silicon carbide monocrystal Effective date of registration: 20180929 Granted publication date: 20180601 Pledgee: Longjiang bank Limited by Share Ltd Harbin Development Zone sub branch Pledgor: HARBIN AURORA OPTOELECTRONICS TECHNOLOGY CO., LTD. Registration number: 2018990000856 |
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Date of cancellation: 20200509 Granted publication date: 20180601 Pledgee: Longjiang bank Limited by Share Ltd Harbin Development Zone sub branch Pledgor: HARBIN AURORA OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: 2018990000856 |
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