CN110331437A - 碳化硅单晶生长装置及制造碳化硅单晶的方法 - Google Patents
碳化硅单晶生长装置及制造碳化硅单晶的方法 Download PDFInfo
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- CN110331437A CN110331437A CN201910626447.2A CN201910626447A CN110331437A CN 110331437 A CN110331437 A CN 110331437A CN 201910626447 A CN201910626447 A CN 201910626447A CN 110331437 A CN110331437 A CN 110331437A
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- Prior art keywords
- silicon carbide
- crucible
- raw material
- face plate
- crystal
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN201910626447.2A CN110331437B (zh) | 2019-07-11 | 2019-07-11 | 碳化硅单晶生长装置及制造碳化硅单晶的方法 |
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CN201910626447.2A CN110331437B (zh) | 2019-07-11 | 2019-07-11 | 碳化硅单晶生长装置及制造碳化硅单晶的方法 |
Publications (2)
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CN110331437A true CN110331437A (zh) | 2019-10-15 |
CN110331437B CN110331437B (zh) | 2020-04-24 |
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CN201910626447.2A Active CN110331437B (zh) | 2019-07-11 | 2019-07-11 | 碳化硅单晶生长装置及制造碳化硅单晶的方法 |
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CN (1) | CN110331437B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111962147A (zh) * | 2020-07-14 | 2020-11-20 | 山东天岳先进材料科技有限公司 | 一种高效率的碳化硅长晶方法及装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020069818A1 (en) * | 2000-12-12 | 2002-06-13 | Masami Naito | Manufacturing method of silicon carbide single crystals |
CN105525352A (zh) * | 2016-01-12 | 2016-04-27 | 台州市一能科技有限公司 | 一种采用升华法高速制造碳化硅晶体的装置及方法 |
CN107604439A (zh) * | 2017-10-26 | 2018-01-19 | 哈尔滨奥瑞德光电技术有限公司 | 一种生长大尺寸碳化硅单晶的热场结构 |
CN207435586U (zh) * | 2017-10-26 | 2018-06-01 | 哈尔滨奥瑞德光电技术有限公司 | 一种生长大尺寸碳化硅单晶的热场结构 |
-
2019
- 2019-07-11 CN CN201910626447.2A patent/CN110331437B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020069818A1 (en) * | 2000-12-12 | 2002-06-13 | Masami Naito | Manufacturing method of silicon carbide single crystals |
CN105525352A (zh) * | 2016-01-12 | 2016-04-27 | 台州市一能科技有限公司 | 一种采用升华法高速制造碳化硅晶体的装置及方法 |
CN107604439A (zh) * | 2017-10-26 | 2018-01-19 | 哈尔滨奥瑞德光电技术有限公司 | 一种生长大尺寸碳化硅单晶的热场结构 |
CN207435586U (zh) * | 2017-10-26 | 2018-06-01 | 哈尔滨奥瑞德光电技术有限公司 | 一种生长大尺寸碳化硅单晶的热场结构 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111962147A (zh) * | 2020-07-14 | 2020-11-20 | 山东天岳先进材料科技有限公司 | 一种高效率的碳化硅长晶方法及装置 |
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Publication number | Publication date |
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CN110331437B (zh) | 2020-04-24 |
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Effective date of registration: 20220418 Address after: 321000 plant 3, No. 2688, south 2nd Ring West Road, qiubin street, Wucheng District, Jinhua City, Zhejiang Province (self declaration) Patentee after: Zhejiang Fuxin Microelectronics Technology Co.,Ltd. Address before: 321000 South Second Ring West Road, Jinhua, Zhejiang Province, No. 2688 Patentee before: ZHEJIANG BOLANTE SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20230428 Address after: 321000 south side of Building 1, No. 2688, south 2nd Ring West Road, qiubin street, Wucheng District, Jinhua City, Zhejiang Province Patentee after: Jinhua Bolante New Material Co.,Ltd. Address before: 321000 plant 3, No. 2688, south 2nd Ring West Road, qiubin street, Wucheng District, Jinhua City, Zhejiang Province (self declaration) Patentee before: Zhejiang Fuxin Microelectronics Technology Co.,Ltd. |
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Denomination of invention: Silicon carbide single crystal growth device and method for manufacturing silicon carbide single crystals Effective date of registration: 20230619 Granted publication date: 20200424 Pledgee: Bank of Jinhua Limited by Share Ltd. science and Technology Branch Pledgor: Jinhua Bolante New Material Co.,Ltd. Registration number: Y2023980044592 |