TW200632992A - Quasi-hydrophobic Si-Si wafer bonding using hydrophilic Si surfaces and dissolution of interfacial bonding oxide - Google Patents

Quasi-hydrophobic Si-Si wafer bonding using hydrophilic Si surfaces and dissolution of interfacial bonding oxide

Info

Publication number
TW200632992A
TW200632992A TW095100286A TW95100286A TW200632992A TW 200632992 A TW200632992 A TW 200632992A TW 095100286 A TW095100286 A TW 095100286A TW 95100286 A TW95100286 A TW 95100286A TW 200632992 A TW200632992 A TW 200632992A
Authority
TW
Taiwan
Prior art keywords
bonding
bonded
hydrophilic
orientation
interfacial
Prior art date
Application number
TW095100286A
Other languages
English (en)
Chinese (zh)
Inventor
Souza Joel P De
John A Ott
Alexander Reznicek
Devendra K Sadana
Katherine L Saenger
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200632992A publication Critical patent/TW200632992A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW095100286A 2005-01-07 2006-01-04 Quasi-hydrophobic Si-Si wafer bonding using hydrophilic Si surfaces and dissolution of interfacial bonding oxide TW200632992A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/031,165 US8138061B2 (en) 2005-01-07 2005-01-07 Quasi-hydrophobic Si-Si wafer bonding using hydrophilic Si surfaces and dissolution of interfacial bonding oxide

Publications (1)

Publication Number Publication Date
TW200632992A true TW200632992A (en) 2006-09-16

Family

ID=36653805

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095100286A TW200632992A (en) 2005-01-07 2006-01-04 Quasi-hydrophobic Si-Si wafer bonding using hydrophilic Si surfaces and dissolution of interfacial bonding oxide

Country Status (4)

Country Link
US (3) US8138061B2 (enExample)
JP (1) JP5043333B2 (enExample)
CN (1) CN1818154A (enExample)
TW (1) TW200632992A (enExample)

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DE602006017906D1 (de) * 2006-12-26 2010-12-09 Soitec Silicon On Insulator Verfahren zum herstellen einer halbleiter-auf-isolator-struktur
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JP5009124B2 (ja) * 2007-01-04 2012-08-22 コバレントマテリアル株式会社 半導体基板の製造方法
FR2911430B1 (fr) * 2007-01-15 2009-04-17 Soitec Silicon On Insulator "procede de fabrication d'un substrat hybride"
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JP5256625B2 (ja) * 2007-03-05 2013-08-07 株式会社Ｓｕｍｃｏ 貼り合わせウェーハの評価方法
JP5433927B2 (ja) * 2007-03-14 2014-03-05 株式会社Ｓｕｍｃｏ 貼り合わせウェーハの製造方法
CN101636832B (zh) 2007-03-19 2012-01-11 S.O.I.Tec绝缘体上硅技术公司 形成图案的薄soi
FR2918792B1 (fr) * 2007-07-10 2010-04-23 Soitec Silicon On Insulator Procede de traitement de defauts d'interface dans un substrat.
WO2009066135A1 (en) * 2007-11-23 2009-05-28 S.O.I.Tec Silicon On Insulator Technologies Precise oxide dissolution
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FR2933233B1 (fr) * 2008-06-30 2010-11-26 Soitec Silicon On Insulator Substrat de haute resistivite bon marche et procede de fabrication associe
FR2933235B1 (fr) * 2008-06-30 2010-11-26 Soitec Silicon On Insulator Substrat bon marche et procede de fabrication associe
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FR2936356B1 (fr) * 2008-09-23 2010-10-22 Soitec Silicon On Insulator Procede de dissolution locale de la couche d'oxyde dans une structure de type semi-conducteur sur isolant
FR2938120B1 (fr) * 2008-10-31 2011-04-08 Commissariat Energie Atomique Procede de formation d'une couche monocristalline dans le domaine micro-electronique
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US9418963B2 (en) 2012-09-25 2016-08-16 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University Methods for wafer bonding, and for nucleating bonding nanophases
FR3007891B1 (fr) * 2013-06-28 2016-11-25 Soitec Silicon On Insulator Procede de fabrication d'une structure composite
JP6061251B2 (ja) * 2013-07-05 2017-01-18 株式会社豊田自動織機 半導体基板の製造方法
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US7285473B2 (en) 2005-01-07 2007-10-23 International Business Machines Corporation Method for fabricating low-defect-density changed orientation Si

Also Published As

Publication number Publication date
US20120156861A1 (en) 2012-06-21
JP2006191029A (ja) 2006-07-20
US20090298258A1 (en) 2009-12-03
JP5043333B2 (ja) 2012-10-10
CN1818154A (zh) 2006-08-16
US8138061B2 (en) 2012-03-20
US20060154442A1 (en) 2006-07-13
US8053330B2 (en) 2011-11-08

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