TW200625605A - Semiconductor memory devices including offset active regions - Google Patents

Semiconductor memory devices including offset active regions

Info

Publication number
TW200625605A
TW200625605A TW094133436A TW94133436A TW200625605A TW 200625605 A TW200625605 A TW 200625605A TW 094133436 A TW094133436 A TW 094133436A TW 94133436 A TW94133436 A TW 94133436A TW 200625605 A TW200625605 A TW 200625605A
Authority
TW
Taiwan
Prior art keywords
active regions
semiconductor memory
memory devices
devices including
including offset
Prior art date
Application number
TW094133436A
Other languages
English (en)
Other versions
TWI280655B (en
Inventor
Doo-Hoon Goo
Han-Ku Cho
Joo-Tae Moon
Sang-Gyun Woo
Gi-Sung Yeo
Kyoung-Yun Baek
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200625605A publication Critical patent/TW200625605A/zh
Application granted granted Critical
Publication of TWI280655B publication Critical patent/TWI280655B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW094133436A 2004-10-08 2005-09-27 Semiconductor memory devices including offset active regions TWI280655B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040080460A KR100706233B1 (ko) 2004-10-08 2004-10-08 반도체 기억 소자 및 그 제조방법

Publications (2)

Publication Number Publication Date
TW200625605A true TW200625605A (en) 2006-07-16
TWI280655B TWI280655B (en) 2007-05-01

Family

ID=36089082

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094133436A TWI280655B (en) 2004-10-08 2005-09-27 Semiconductor memory devices including offset active regions

Country Status (6)

Country Link
US (3) US8013375B2 (zh)
JP (1) JP2006108691A (zh)
KR (1) KR100706233B1 (zh)
CN (1) CN1779978A (zh)
DE (1) DE102005047989B4 (zh)
TW (1) TWI280655B (zh)

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TWI549280B (zh) * 2014-05-30 2016-09-11 華亞科技股份有限公司 具有單層支撐結構的圓柱狀存儲節點

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KR100796644B1 (ko) * 2007-02-22 2008-01-22 삼성전자주식회사 디램 소자 및 그 형성 방법
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KR101057196B1 (ko) * 2009-06-30 2011-08-16 주식회사 하이닉스반도체 반도체 소자의 비트라인 형성방법
JP2014056941A (ja) 2012-09-12 2014-03-27 Toshiba Corp 抵抗変化型メモリ
KR102003004B1 (ko) 2012-09-12 2019-07-23 삼성전자주식회사 매립 게이트를 포함하는 반도체 소자 및 그 제조 방법
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TW201546804A (zh) * 2014-02-05 2015-12-16 Conversant Intellectual Property Man Inc 有可製造的電容的動態隨機存取記憶體裝置
KR102554495B1 (ko) * 2016-01-22 2023-07-12 에스케이하이닉스 주식회사 수평적 커플링 구조를 갖는 불휘발성 메모리셀 및 이를 이용한 메모리 셀 어레이
CN107910330B (zh) * 2017-11-29 2023-09-19 长鑫存储技术有限公司 动态随机存取存储器阵列及其版图结构、制作方法
US10692872B2 (en) * 2017-12-12 2020-06-23 Varian Semiconductor Equipment Associates, Inc. Device structure for forming semiconductor device having angled contacts
CN112885781B (zh) * 2019-11-29 2022-06-24 长鑫存储技术有限公司 有源区的制备方法及半导体器件
CN117690909A (zh) * 2022-09-01 2024-03-12 长鑫存储技术有限公司 半导体结构以及存储器

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI549280B (zh) * 2014-05-30 2016-09-11 華亞科技股份有限公司 具有單層支撐結構的圓柱狀存儲節點

Also Published As

Publication number Publication date
DE102005047989B4 (de) 2007-12-20
US20090218610A1 (en) 2009-09-03
US8013375B2 (en) 2011-09-06
CN1779978A (zh) 2006-05-31
US20090218609A1 (en) 2009-09-03
JP2006108691A (ja) 2006-04-20
DE102005047989A1 (de) 2006-04-13
KR100706233B1 (ko) 2007-04-11
US20090218654A1 (en) 2009-09-03
US8013374B2 (en) 2011-09-06
KR20060031429A (ko) 2006-04-12
TWI280655B (en) 2007-05-01

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