TW200523115A - Method for making a flat-top pad - Google Patents

Method for making a flat-top pad Download PDF

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Publication number
TW200523115A
TW200523115A TW093125001A TW93125001A TW200523115A TW 200523115 A TW200523115 A TW 200523115A TW 093125001 A TW093125001 A TW 093125001A TW 93125001 A TW93125001 A TW 93125001A TW 200523115 A TW200523115 A TW 200523115A
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TW
Taiwan
Prior art keywords
composition
substrate
flat
necessary
component
Prior art date
Application number
TW093125001A
Other languages
English (en)
Inventor
Debra Charilla Soliz
Yeong-Joo Lee
Original Assignee
Dow Corning
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning filed Critical Dow Corning
Publication of TW200523115A publication Critical patent/TW200523115A/zh

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    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Description

200523115 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種製造可用於電子應用中之平頂墊之方 法。更特定言之，本發明係關於一種印刷可用作晶粒附著 黏接劑（die attach adhesive)之平頂塾之方法。 【先前技術】 可將用於電子應用t的諸如梦晶圓之基板及其它基板上 的印刷墊用作晶粒附著黏接劑。該等墊可用於將半導體晶 粒結合至-基板、另—晶粒、或其它電子組件。此應用可 用於該墊物質（material)之後固化表面處理以 接力，例如，在藉由諸如電聚處理或化學沈積之：法 該墊使其具有黏接力時。然而，此等方法可經受該墊之頂 邛可此不平坦之缺點。可出現諸如邊緣小山之疵 ”、占右該墊之頂部具有疵點，則該等疵點可引起結合表面 之間的不完全接觸且可導致差的黏接力。因此，在電子工 業中繼續存在提供平頂墊之方法之需要。 待由本發明解決之問題 不希望受到理論約束，但吾人認為由於在沈積工具中之 隙縫之側壁與基板上沈積之組合物之間的相互作用使得在 於基板上形成_墊期間形成一邊緣小山，該沈積工具諸如 在P刷過私中使用之習知篩網或模板。此相互作用使得靠 近隙縫之所有或一部分側壁而沈積之組合物的高度高於經 由°亥隙縫之剩餘部分而沈積之組合物的高度，藉此在所得 沈積物之至少一部分周邊的周圍形成邊緣小山。該邊緣小 95374.doc 200523115 山可有害地影響平坦基板至藉由硬化沈積物所形成的該墊 之頂部的黏接力。 【發明内容】 本發明係關於一種減少邊緣小山及製造平頂墊之方法。 製造平頂塾之方法包含：a)將組合物之平頂沈積物塗覆至 第一基板上；及b)硬化該平頂沈積物。該方法可進一步包 含：c)將一第二基板黏接至該平頂沈積物之頂部；及視需 要d)重複步驟a)、b)及c)。 【實施方式】 除非另外指出，所有數量、百分比及比率均以重量計。 以下是本文所用定義之列表。 定義 π邊緣小山”意指一種物質之至少一部分周邊之周圍的區 域，其具有大於該物質之剩餘部分的高度。 ’’電漿處理”意指將一表面曝露於氣態，其藉由外部施加 能量之形式活化且包括（但不限於）電暈放電、介電障壁放 電、燃燒、電漿喷射、低壓輝光放電及大氣輝光放電處理。 在電漿處理中使用之氣體可以是空氣、氨、氬、二氧化碳、 一氧化碳、氦、氫、氪、氖、氮、一氧化二氮、氧、臭^、 ^蒸汽、其組合及其它。或者，可使用其它更多的反應性 氣體或蒸汽，其在處理應用壓力下處於氣體之正常狀態或 用適田的I置自其它液態而蒸發，該等氣體或蒸汽諸如六 甲基一矽氧烷、核聚二甲基矽氧烷、環聚氫甲基矽氧烷 (CyCl〇P〇lyhydr〇genmethylsil〇xane)、環聚氫甲基 _共 _二甲基 95374.doc 200523115 石夕氧烧、反應性砍烧及其組合。 方法 本發明係關於一種製造平頂墊之方法。該方法包含· a) 將組合物之平頂沈積物塗覆至一第一美板上· b) 硬化該平頂沈積物； c) 將一第二基板黏接至該平頂沈積物之頂部；及 d) 視需要地重複步驟a)、b)及c)。 藉由使組合物穿過-具有由側壁環繞之至少—隙縫的沈 積工具而可將平頂沈積物塗覆至基板。與該沈積工具之= 均高度相比該沈積工具上隙縫之至少一部分周邊的周圍之 側壁的高度係滅少的。舉例而言，藉由諸如印刷之方法可 將平頂沈積物塗覆至第一基板上。適當之印刷方法之實例 包括利用如層降模板之沈積工具的模板印刷及利用如具有 複數個隙縫，每一隙縫由側壁環繞之篩網之沈積工具的篩 網印刷。與該篩網之平均厚度相比該篩網上每一隙縫之^ 少一部分周邊的周圍之側壁的高度是減少的。圖la、“、 lc及Id中展示了適當的層降模板之一實例。圖丨&展示了包 括複數個方形隙縫101之層降模板1〇〇的俯視圖。每一隙縫 ιοί在後邊緣周圍具有一蝕刻區域102。蝕刻區域1〇2具有小 於模板1〇〇之剩餘部分之高度100z的高度1〇2z。一熟習此項 技術者將思識到所選精確模板組態取決於各種因素，其包 括所k擇以形成平頂沈積物的組合物及所要之平頂沈積物 的尺寸與形狀。该模板可具有如圖1 a中所示具方角之隙縫 或具圓角之隙縫。該模板可或者具有一環繞每一隙縫之整 95374.doc 200523115 個周邊的敍刻區域。該模板可視需要進行電解抛光。該等 基板可為用於電子應用中之基板，諸如聚合物、金屬及半 導體。下面描述了基板之適當實例。 藉由任何習知之方法可硬化平頂沈積物，諸如，(例如) 當該組合物為熱溶合黏接劑時藉由冷卻或(例如)當該組合 物可固化時藉由固化。用於硬化之精確方法取決於所選組 &物之X員型。下面描述了組合物之適當實例。 可在步驟b)之前、期間或之後或其組合期間執行步驟。 舉例而言’當在步驟b)之前執行步驟C)時，將第二基板施加 至濕的組合物。當在步驟b)期間執行步驟c)時，可將第二基 板鉍力至B-級（部分固化）組合物。步驟c)可藉由一程序來執 行’該程序包含：i)活化平頂墊之頂部，及i〇其後將第二基 板施加至平頂墊之頂部。活化平頂墊之頂部可藉由諸如電 漿處理之已知方法來執行。在纖年1()月9日φ請之具有公 開號2003/0145940之美國專利申請案第own，·號中揭 不了適當的電漿處理方法之實例，為了揭示電漿處理方法 該案以引用之方式倂入本文。 在電漿處理之後只要一可行就可使平頂墊與第二基板接 觸。或者，該方法視情況可進一步包含：在步驟丨）之後及步 恥11)之則儲存該平頂墊。電漿處理可在平頂墊或平頂墊與 第二基板之全部或一部分表面上執行。 藉由在室溫下執行步驟⑴幾秒可獲得黏接力。或者，可 在面溫 '高壓或兩者同時存在下進行步驟⑴。為步驟u)所 认擇之精確條件將取決於包括該方法之特定使用之各種因 95374.doc 200523115 素。舉例而言，在2001年1〇月9曰申請之具有公開號 2〇〇3/〇14594()之美國專利中請案第〇咖3,498號中揭示了. 獲得黏接力之適當方法，為了揭示建立黏接力之方法該案、 以引用之方式倂入本文。 本發明之方法可用於製備電子組件。舉例而言，電子組 件可藉由包含以下步驟之方法製備·· )將可口化之♦矽氧組合物平頂沈積物模板印刷至一第 一電子基板上， 其中該第一電子基板選自半導體晶粒或半導體晶粒附· 著部件， 其中藉由橡皮滾子麼過層降模板而執行該平頂沈積物 之模板印刷； ' b)固化該平頂沈積物以形成—具有平頂之平頂塾； 視需要地e)將-第二電子基板黏接至該平頂沈積物之頂 部， 、 其中該第二電子基板選自半導體晶粒或半導體晶粒㈤春 著部件； 口視而要地d)重複步驟a)、b)及e)。該可固化聚石夕氧組合物 可進行固化以形成（例如）晶粒附著黏接劑。 圖2展不了可藉由本發明之方法製備的堆疊晶片模組扇_ 之=實例。堆疊晶片模組200包括一基板2〇1，其具有一經 , 由第一晶粒附著黏接劑203結合至該基板2〇1之第一 IC晶片 =2。經由導線2〇4將第一 IC晶片2〇2電連接至基板2〇1阳在 第IC曰曰片202上形成第二晶粒附著黏接劑2〇5。第二 95374.doc -10- 200523115 片206黏接至第二晶粒附著黏接劑2〇5。經由導線2〇7將第二 1C晶片206電連接至該基板。基板2〇1在與第一晶粒附著黏 接劑203相對之表面上具有焊接球2〇8。 堆疊晶片模組200可（舉例而言）藉由根據本發明之方法將 第一可固化聚矽氧組合物之平頂沈積物經由一層降模板 (例如，圖1中所示之層降模板100)塗覆至基板2〇1，及部分 或完全固化第一可固化聚矽氧組合物以形成具有一平頂之 第一晶粒附著黏接劑203而進行製備。接著可電漿處理第一 晶粒附著黏接劑203之頂部以活化該表面且可用壓力將第 一 1C晶片202施加至該活化表面。例如，可視需要在施加第 一 1C晶片202期間或之後或兩者期間加熱第一晶粒附著黏 接劑203，以進一步固化第一晶粒附著黏接劑Μ]。 可接著根據本發明之方法再次利用一層降模板（例如，圖 1中所示之層降模板1 〇〇)將第二可固化液體組合物之平頂 沈積物（其可與第一可固化液體組合物相同或不同）塗覆至 第一 1C晶片202之頂部。可將第二可固化液體組合物部分或 完全固化以形成具有一平頂之第二晶粒附著黏接劑2〇5。接 著可電漿處理第二晶粒附著黏接劑2〇5之頂部以活化該表 面且可用壓力將苐二1C晶片206施加至該活化表面。例 如，可視需要在施加第一 1C晶片202期間或之後或兩者期間 加熱苐一晶粒附著黏接劑205，以進一步固化第二晶粒附著 黏接劑206。 接著可執行導線結合以將第一 1C晶片202經由導線204電 連接至基板201且將第二ic晶片206經由導線207電連接至 95374.doc -11 - 200523115 基板201。焊接球可在與第—晶粒附著轉㈣3相對之 表面上附著至基板20i。可增加一重疊模塑—幻 2〇9以保護IC晶片2〇2、2〇6及導線2〇4、2〇7。 組合物 適用於上述方法中之組合物可以是任何便利的熱溶合黏 接劑或可固化組合物。適當之可固化組合物包括可固化聚 石夕氧組合物、可固化聚石夕氧·有機組合物及可固化有機組合 物。可固化聚矽氧組合物可藉由(例如)矽氫化反應或縮合反 =而成為可固化的。適當之可固化聚石夕氧_有機組合物包括 聚矽氧-苯酚組合物及聚矽氧_環氧組合物。適當之可固化有 機組合物例如環氧組合物。適當之可固化組合物可藉由（例 如）曝露於熱、濕氣、紫外輻射、微波輕射、電子束輕射、 :或其組合下而成為可固化的。用於上述方法中之適當組 :物可以是晶粒附著黏接劑組合物。該晶粒附著黏接劑組 口物可包含固化以形成聚矽氧晶粒附著黏接劑之可固化聚 夕氧、，且合物、固化以形成聚矽氧_有機晶粒附著黏接劑之可鲁 :化聚⑦氧有機組合物、或固化以形成有機晶粒附著黏接 d之可固化有機組合物。適當之可固化聚矽氧組合物包括 (仁不限於）在2001年10月9日申請之具有公開號 2003/0145940之美國專利申請案第〇9/973,498號中的晶粒- 2著黏接劑組合物，且其它矽氫化可固化聚矽氧組合物包· 3 . A)每分子含有平均至少兩個脂肪不飽和有機基團的聚 有機石夕氧烧，B)每分子含有平均至少兩個由石夕鍵結之氣原 子的聚有機氫矽氧烷，及C)矽氫化反應催化劑。該組合物 95374.doc -12- 200523115 可進一步包含適用於晶粒附著黏接劑之一或多種可選擇組 份，諸如D)固化改質劑，E)填充劑，F)用於填充劑之處理 劑，G)間隔劑，H)黏接促進劑，υ顏料，乃流變改質劑， Κ)減少空隙劑，及L)溶劑。 組份（A)聚有機矽氧烷 組份（A)係每分子具有平均至少兩個不飽和有機基團的 聚有機矽氧烷。組份（A)可具有直鏈、分支鏈或樹脂結構。 組份（A)可為均聚物或共聚物。該等不飽和有機基團可以是 具有自2至12個碳原子之烯基基團且例如（但不限於）乙烯 基、烯丙基、丁烯基及己烯基。該等不飽和有機基團可以 是具有2至12個碳原子之炔基基團，且例如（但不限於）乙炔 基丙块基及丁块基。或者，該等不飽和有機基團可含有 丙烯酸酯官能或甲基丙烯酸酯官能基團且例如（但不限於） 諸如丙烯醯氧基丙基之丙烯醯氧基烷基及諸如甲基丙烯醯 氧基丙基之曱基丙烯醯氧基烷基。組份（A)中該等不飽和有 機基團可位於末端、懸掛（pendant)或末端及懸掛位置。 組份（A)中剩餘之由矽鍵結之有機基團可為無脂肪不飽 和f生的單彳貝有機基團。此等單價有機基團可具有丄至個碳 原子，或者1至1 〇個碳原子，且例如（但不限於）諸如甲基、 乙基、丙基、戊基、辛基、十一烷基及十八烷基之烷基； 諸如環己基之環烷基；諸如苯基、曱苯基、二曱笨基、苯 曱基及2-苯乙基之芳基；及諸如由氰乙基及氰丙基例示之 氰烷基基團的氰基官能基團。組份（A)是無氟原子的。 雖然沒有特定限制組份（A)之黏度，然而，組份（A)在25 95374.doc -13- 200523115 C下可具有0.05至500 Pas的黏度，或者在25。〇下〇丨至加^
Pa · s的黏度。將組份以1〇〇重量份數之量添加至組合物 中。 ， 組份（Α)可包含具有下式結構之聚有機矽氧烷 (a) R13SiO(R12Si〇)a(R1R2Si〇)0SiR13 ^ (b) R32R4Si0(R32Si〇)x(R3R4Sl〇)0SiR32R4，或 (c) 其組合。 在式（a)中，α具有〇至2000之平均值，且^具有2至2〇〇〇之 平均值。每一Rl獨立地為一單價有機基團。適當之單價有 機基團包括（但不限於）諸如丙烯醯氧基丙基及甲基丙稀醯 氧基丙基之丙烯酸官能基團；諸如甲基、乙基、丙基及丁 基之烧基基團；諸如乙烯基、烯丙基及丁烯基之烯基基團； 諸如乙炔基及丙炔基之炔基基團；諸如苯基、甲苯基及二 :苯基之芳族基；及諸如氰乙基及氰丙基之氰烷基基團。 母一 R2獨立地為一不飽和單價有機基團。r2例如：諸如乙 烯基、烯丙基及丁烯基之稀基基團與諸如乙炔基及丙块基鲁 之块基基團’及諸如丙烯醯氧基丙基及甲基丙稀醯氧基丙 基之丙烯酸官能基團。 在式（b)中，χ具有〇至2〇〇〇之平均值，且δ具有〇至2〇〇〇之 Τ句值母R獨立地為一單價有機基團。適當之單價有 機基團已括（但不限於）諸如丙稀醒氧基丙基及甲基丙稀酉藍-氧基丙基之丙烯酸官能基團；諸如甲基、乙基、丙基及丁 基之烧基基團；諸如乙烯基、烯丙基及丁烯基之烯基基團； 4如乙快基及丙块基之块基基團；諸如苯基、甲苯基及二 95374.doc -14- 200523115 曱苯基之芳族基；及諸如氰乙基及氰丙基之氰烷基基團。 每一 R4獨立地為一不飽和有機烴基團。R4例如：諸如乙烯 基、烯丙基及丁烯基之烯基基團；諸如乙炔基及丙炔基之 炔基基團；及諸如丙烯醯氧基丙基及甲基丙烯醯氧基丙基 之丙烯酸官能基團。 組伤（A)可包含聚^一有機碎氧烧（polydiorganosiloxane)， 諸如 i)具有二甲基乙烯基石夕烧氧基末端之聚二甲基石夕氧烧， 11)具有二甲基乙烯基矽烷氧基末端之聚（二甲基矽氧烷/甲 基乙烯基石夕氧烧）， m)具有二曱基乙烯基矽烷氧基末端之聚甲基乙烯基矽氧 烷， 1V)具有三甲基矽烷氧基末端之聚（二甲基矽氧烷/甲基乙烯 基矽氧烷）， v) 具有二甲基矽烷氧基末端之聚甲基乙烯基矽氧烷，
vi) 具有二甲基乙烯基㈣氧基末端之聚（二甲基碎氧燒/甲 基苯基砍氧烧）， vli)具有二甲基乙烯基矽烷氧基末端之聚(二甲基矽氧烷/二 苯基碎氧烧）， viii)具有苯基、甲基 氧烧， 乙烯基-矽烷氧基末端之聚二甲基矽 ix)具有 矽氧烷 甲基-丙烯醯氧基丙基-矽烷氧基末端之 聚二甲基 χ)具有 二甲基-甲基丙烯醯氧基丙基 -石夕烷氧基末端 之聚二 95374.doc -15- 200523115 曱基矽氧烷， X1)具有二甲基己烯基矽烷氧基末端之聚二甲基矽氧烧， xii)具有二甲基己烯基矽烷氧基末端之聚（二甲基矽氧烷/甲， 基己烯基矽氧烷）， X111)具有二甲基己烯基矽烷氧基末端之聚甲基己烯基矽氧 烷， xiv)具有三甲基矽烷氧基末端之聚（二甲基矽氧烷/甲基己 烯基矽氧烷）， XV)具有二甲基乙烯基矽烷氧基末端之聚（二甲基矽氧烷/甲 基氰丙基石夕氧烧），及 xvi)其組合。 衣備適於用作組份（A)之聚二有機石夕氧烧之方法為此項 技術中已為吾人熟知，諸如，對應的有機函化矽烷之水解 及縮合或環聚二有機矽氧烷之平衡。 組份（A)可包含諸如以下之樹脂··基本由R^si〇M單元及 Sl〇4/2單元組成之MQ樹脂、基本由R5Si〇w單元及R52Si〇2/2 φ 早疋組成之TD樹脂、基本由R53Si〇i/2單元及R5si〇3/2單元組 成5之MT樹脂、基本由R^SiO!,2單元、R5Si03/2單元及 R^SiOw單元組成2MTD樹脂，或其組合。 為單彳貝有機基團。由R5表示之單價有機基團可 "有1至20個石反原子，或者1至個碳原子。單價有機基團’ 之貝例包括（但不限於）諸如丙烯醯氧基烷基基團之丙烯酸 酉曰s月b基團，諸如甲基丙烯醯氧基烷基基團之甲基丙烯酸 S曰S月b基團’氰基官能基團，及單價煙基團。單價煙基圈 95374.doc -16 - 200523115 包括（但不限於）諸如甲基、乙基、丙基、戊基、辛基、十一 烧基及十八烧基之烧基，绪如ί辰己基之環烧基；諸如乙稀 基、烯丙基、丁烯基及己烯基之烯基；諸如乙炔基、丙块 基及丁炔基之炔基；及諸如苯基、甲苯基、二甲苯基、笨 甲基及2-苯乙基之芳基。氰基官能基團包括（但不限於）諸如 氰乙基及氰丙基之氰烷基基團。 該樹脂可含有平均3至30莫耳百分數的不飽和有機基 團。該等不飽和有機基團可以是烯基基團、炔基基團、丙 烯酸醋官能基團、甲基丙烯酸酯官能基團或其組合。該樹 脂中不飽和有機基團之莫耳百分數為該樹脂中含不飽和基 團之石夕氧烷單元的莫耳數與該樹脂中矽氧烷單元的總莫耳 數之比率，乘以100。 製備樹脂之方法為此項技術中已為吾人所熟知。舉例而 δ ’藉由處理樹脂共聚物可製備樹脂，該樹脂共聚物至少 用含烯基之端基封閉（endbl〇ck)試劑由Daudt等人的石夕石水 /谷膠封^ 方法（siHca hydrosol capping process)製得。在美 國專利第2,676，182號中揭示了 Daudt等人的方法。 簡單地說，Daudt等人的方法涉及將在酸性條件下之矽石 水溶膠與可水解的諸如三甲基氣矽烷之三有機矽烷、諸如 甲基一石夕氧烧之石夕氧烧、或其混合物反應並回收具有Μ 及Q單元之共聚物。生成之共聚物一般含有自2至5重量％之 羥基基團。 可藉由以足以在最終產物中提供自3至3〇莫耳百分數之 不飽和有機基團的量BDaudt等人的產物與含不飽和有機 95374.doc 200523115 基團之端基封閉試劑及無脂肪不飽和性之端基封閉試劑反 應來製備該樹脂，其通常含有小於2重量％之由矽鍵結之羥 基基團。端基封閉試劑之實例包括（但不限於）矽氮烷、矽氧 烷及矽烷。適當之端基封閉試劑為此項技術中已為吾人所 熟知且例示於美國專利第4,584,355號、第4,591，622號及第 4,585,836號中。單—端基封閉試劑或該等試劑之混合物可 用於製備該樹脂。 組份（A)可以是單一聚有機矽氧烷或包含在至少一個以 下性質：結構、黏度、平均分子量、矽氧烷單元及序列方 面不同的兩種或兩種以上聚有機矽氧烷之組合。 組伤（B)有機氫聚石夕氧烧 組份（B)是每分子具有平均至少兩個由矽鍵結之氫原子 的有機虱聚矽氧烷。組份（B)可為均聚物或共聚物。組份（B) 可具有直鏈、分支鏈、環狀或樹脂結構。組份（B)中的由石夕 鍵結之氫原子可位於末端、懸掛或末端及騎位置。組份 (B)是無氟原子的。 、、且伤（B)可包含矽氧烷單元，包括（但不限於）、 R sSiOw、HRkiOw、R62si〇2/2、R6si〇3/2，及 si〇4 2單元。 在先則式中，每一 R獨立地選自無脂肪不飽和性之單價有 機基團。 組份（B)可包含具有下式結構之化合物 (a)R73SiO(R72SiO)s(R7HSiO)0SiR73，或 WR^HSiCKR^SiO^RSHSiOhSiR^H， (c)其組合。 95374.doc -18- 200523115 在式（a)中，ε具有〇至2000之平均值，且0具有2至2〇〇〇 之平均值。每一 R7獨立地為一無脂肪不飽和性之單價有機 基團。適當之無脂肪不飽和性的單價有機基團包括諸如甲 基、乙基、丙基及丁基之烷基基團；諸如苯基、甲苯基及 一甲笨基之芳知基團，及由諸如氰乙基及氰丙基之氰燒基 基團例示之氰基官能基團。 在式（b)中，γ具有0至2000之平均值，且”具有〇至2〇〇〇之 平均值。每一 R8獨立地為一無脂肪不飽和性之單價有機基 團。適當之無脂肪不飽和性的單價有機基團包括諸如甲 基、乙基、丙基及丁基之烷基基團；諸如苯基、甲苯基及 二甲苯基之芳族基團，·及由諸如氰乙基及氰丙基之氰烷基 基團例示之氰基官能基團。 組份（Β )例如： I) 具有二甲基氫矽烷氧基末端之聚二甲基矽氧烷， II) 具有二甲基氫矽烷氧基末端之聚（二甲基矽氧烷7甲基氫 矽氧烷）， III) 具有二甲基氫矽烷氧基末端之聚甲基氫矽氧烷， IV) 具有二甲基矽烷氧基末端之聚（二甲基矽氧烷/甲基氫矽 氧烷）， V) 具有三甲基矽烷氧基末端之聚甲基氫矽氧烷， VI) 基本由HCCHsLSiOw單元及Si〇4/2單元組成之樹脂，及 vii)其組合。 組份（B)可為在至少一個以下性質··結構、平均分子量、 黏度、石夕氧烧單元及序列方面不同的兩種或兩種以上有機 95374.doc -19- 200523115 氫聚矽氧烷之組合。 製備適於用作組份（B)之直鏈、分支鏈及環狀有機氫聚石夕 氧烧的方法為此項技術中已為吾人所熟知，諸如有機鹵化 、 矽烷之水解及縮合。製備適於用作組份（B)之有機氫聚矽氧 燒树月曰的方法同樣已為吾人所熟知，如美國專利第 5,31〇,843號、第4,370,358號及第4,707,531號中所例示。 組份（B)中由矽鍵結之氫原子與組份（A)中脂肪不飽和基 團的莫耳比（SiHB/ViA)不是臨界的。 鲁 組份（C)矽氫化催化劑 組份（C)係矽氫化催化劑。以該組合物之重量計，以鉑族 金屬的0.1至1〇〇〇 ppm ’或者1至5⑽ppm，或者2至2〇〇，或 者5至150 ppm之a：將組份（c)添加至該組合物中。適當之石夕 氫化催化劑為此項技術中已為吾人所熟知且是可購得的。 、、且伤（C)可包含選自鉑、铑、釕、鈀、餓或銥金屬之鉑族金 屬或其有機金屬化合物，或其組合。組份（c)由以下化合物 例示·以基貝（matrix)或核心外殼（c〇resheli)型結構微囊密 翁 封的諸如氣鉑酸、氣鉑酸六水合物、二氯化鉑，及該等具 有低刀子畺有機聚石夕氧燒之化合物或鉑化合物之錯合物。 鉑與低分子量有機聚矽氧烷之錯合物包括1，3-二乙烯基_ 1，1，3,3-四甲基二矽氧烷與鉑之錯合物。可將此等錯合物微 · 囊密封於樹脂基質中。 - 用於組份（C)之適當的矽氫化催化劑描述於（例如）美國專 利第 3，159,601 號、第 3,220,972 號、第 3,296,291 號、第 3,419,593號、第 3,516,946號、第 3,814,730號、第 3,989,668 95374.doc -20- 200523115 號、第4,784,879號、第5,〇36，117號及第5，175,325號，及歐 ’州專利第0 347 895 B號中。微囊密封之矽氫化催化劑及其 製備方法為此項技術中已為吾人所熟知，例如美國專利第 4,766，176號及其中引用之參考案；及美國專利第5,〇17,654 號。 組份（D)固化改質劑 組份（D)是固化改質劑。可將組份（D)添入以延長本發明 之組合物的存放期或工作時間，或兩者。可添入組份（d)以 提咼该組合物之固化溫度。適當之固化改質劑為此項技術 中已為吾人所熟知且是可購得的。組份（D)例如：諸如甲基 丁炔醇、乙炔基環己醇、二甲基己炔醇及其組合之炔醇； 諸如由1，3,5,7-四甲基-1，3,5,7_四乙烯基環四矽氧烷、 1，3,5,7-四甲基-1，3,5,7-四己烯基環四矽氧烷及其組合例示 之甲基乙烯基環矽氧烷的環烯基矽氧烷；諸如3_甲基_3_戊 烯-1-炔、3，5-一甲基-3·己稀-1-炔之烯-快化合物；諸如苯幷 二σ坐之二α坐，膦，硫醇；聯胺；諸如四甲基乙二胺、二烧 基反式丁烯二酸、二烯基反式丁烯二酸、二烷氧基烷基反 式丁烯二酸、馬來酸及其組合之胺。適當之固化改質劑由 (例如）美國專利第3,445,420號、第3,989,667號、第4,584,361 號及第5,036，117號所揭示。 可添入該組合物中之組份（D)的量將取決於所用的特定 固化改質劑、組份（C)之性質及量以及組份（Β)之組合物。然 而’組份（D)的量可以是以該組合物之重量計〇·⑽丨^至丨〇0/〇。 組份（Ε)填充劑 95374.doc -21 - 200523115 組份（E)是填充劑。可添入該組合物中之組份（E)的量取決 於包括所需之流變性質及所選填充劑之類型的各種因素。 可將組份（E)以組合物之重量計0.1%至90%的量添入該組合 物中。適當之填充劑包括諸如矽石、二氧化鈦及其組合之 增強填充劑。適當之增強填充劑為此項技術中已為吾人所 熟知且是可購得的，諸如由U.S. Silica of Berkeley Springs 以MIN-U-SIL名稱出售之粉末狀矽石及由Cabot Corporation of Massachusetts 以 CAB-0-SIL名稱出售之 WV 或煙霧狀石夕石。 傳導填充劑（意即，導熱、導電或既導熱又導電之填充劑） 亦可用作組份（E)。適當之傳導填充劑包括金屬粒子、金屬 氧化物粒子及其組合。適當之導熱填充劑例如：氮化銘； 氧化鋁；鈦酸鋇；氧化鈹；氮化硼；金剛石；石墨；氧化 鎂；諸如銅、金、鎳或銀之金屬微粒；碳化矽；碳化鎢； 氧化鋅及其組合。 傳導填充劑為在此項技術中已為吾人所熟知且是可購得 的，例如參見美國專利第6,169,142號（第4欄第7-33行）。舉 例而言，CB-A20S及Al-43-Me為可自Showa-Denko購得之具 有不同粒子尺寸的氧化鋁填充劑，及AA-04、AA-2及AA18 為可自Sumitomo Chemical Company購得之氧化铭填充 劑。銀填充劑可自 Metalor Technologies U.S.A· Corp· of Attleboro，Massachusetts，U.S.A.購得。氮化蝴填充劑可自
Advanced Ceramics Corporation，Cleveland，Ohio，U.S.A·購 得0 95374.doc -22- 200523115 雖然沒有特定限制傳導填充劑粒子之形狀，然而，圓形 或球形粒子可防止在該組合物中高貞載導熱填充劑時黏度 增加至一不當的程度。 可使用具有不同粒子尺寸及不同粒度分佈之填充劑的組 合。舉例而言，可需要將具有較大平均粒子尺寸之第一填 充劑與具有較小平均粒子尺寸之第二填充劑以滿足最密充 填（closest packing)理論分佈曲線之比例組合起來。此可改 良充填效率且可降低黏度並增強熱量轉移。 組份（F)處理劑 填充劑可視需要用處理劑進行表面處理。處理劑及處理 方法為此項技術中已為吾人所熟矣口，參見美國專利第 6，169，142號（第4攔第42行至第5欄第2行）。可在將填充劑與 組合物之其它組份組合之前用處理劑處理該填充劑，或可 就地處理該填充劑。 $該處理劑可以是具有下式結構之烷氧基矽烷： R'SKOR1。^)，此處p為i、2或3 ;或者p為3。r9為具有 至少1個碳原子、或者至少8個碳原子的經取代或未經取代 之單價烴基團。R9具有高達50個碳原子，或者高達3〇個碳 原子，或者高達18個碳原子。r9例如：諸如己基、辛基、 十二烷基、十四烷基、十六烷基及十八烷基之烷基基團； 及諸如苯曱基、苯基及苯乙基之芳族基團。R9可以是飽和 或不飽和的、分支鏈或未分支的及未經取代的。R9可以是 飽和、未分支及未經取代的。 R為具有至少1個碳原子之未經取代、飽和的烴基團。 95374.doc -23- 200523115
RlG可具有高達4個碳原子，或者高達2個碳原子。該處理劑 例如·己基二甲氧基矽烷、辛基三乙氧基矽烷、癸基三甲 氧基矽烷、十二烷基三甲氧基矽烷、十四烷基三甲氧基矽 烧苯基二甲氧基石夕烧、苯乙基三甲氧基石夕烧、十八烧基 三甲氧基矽烷、十八烷基三乙氧基矽烷及其組合。 烷氧基官能寡聚矽氧烷亦可用作處理劑。烷氧基官能寡 ♦矽氧烷及其製備方法為此項技術中已為吾人所熟知，例 如參見歐洲專利第1 101 167 A2號。舉例而言，適當之烷氧 基S能养聚矽氧烷包括具有下式結構之彼等物： (R 0)dSi(OSiR122R13)4_d。在此式中，d為 ι、2或 3，或者 d 為3。每一 r11可以是一烷基基團。每一 Rl 2可獨立地選自具 有1至10個碳原子之飽和及不飽和單價烴基團。每一 Rl3可 以是一具有至少11個碳原子之飽和或不飽和單價烴基團。 金屬填充劑可用以下各物來處理：諸如十八烷基硫醇及 其它之烧硫醇，及諸如油酸、硬脂酸之脂肪酸，鈦酸酯， 鈦酸酯偶合劑，錯酸酯偶合劑及其組合。 用於氧化銘或鈍化氮化鋁之處理劑可包括烷氧基矽烷基 官能烷曱基聚矽氧烷（例如，Ri4bRi5cSi(ORl6)(4 b c)之部分水 解縮合物或共水解縮合物或其混合物），可水解基團為矽氮 烧、醯氧基或肟基的類似物質。在此等所有物質中，鏈繫 至矽之基團（諸如上式中的R14)是一長鏈不飽和單價烴或單 價芳香官能烴。R15是一單價烴基團，及Rl6是一具有1至4 個碳原子之單價烴基團。在上式中，b為1、2或3，且C為〇、 1或2，限制條件為b+c為1、2或3。一熟習此項技術者可最 95374.doc -24- 200523115 k化彳寸疋處理以幫助該填充劑分散且不須進行過多實 驗。 組份（G)間隔劑 組伤（G)是間隔劑。間隔劑可包含有機粒子、無機粒子或 其組合。間隔劑可以是導熱、導電或既導熱又導電的。間 隔劑可具有25微米至250微米之粒子尺寸。間隔劑可包含單 分散珠粒。組份（G)之量取決於各種因素，其包括：粒子的 分佈、該組合物置放期間施加之壓力、置放之溫度及其它。 該組合物可含有除組份斤）之一部分之外或作為替代添加 的高達15%，或者高達5%之組份（G)。 組份（H)黏接促進劑 組份（H)是黏接促進劑。可將組份（H)以該組合物之重量 。十0 · 0 1至5 0重里份數之置添入該組合物中。組份（η)可包含 過渡金屬螯合劑、烷氧基矽烷、烷氧基矽烷與羥基官能聚 有機矽氧烷之組合、或其組合。 組份（H)可以是不飽和或環氧官能化合物。適當之環氧官 旎化合物為此項技術中已為吾人所熟知且是可購得的，例 如參見美國專利第4,087,585號、第5，194,649號、第 5,248,715號及第5,744,507號第4-5欄。組份（11)可包含不飽 和或環氧官能烧氧基矽烧。舉例而言，該官能烧氧基矽烷 可具有式R17M Si(〇R18)(4_m)，其中从為}、]或3，或者烊為1〇 每一 R17獨立地為一單價有機基團，限制條件為至少一個 R為不飽和有機基團或環氧官能有機基團。用於Rn之環氧 官能有機基團例如3-縮水甘油氧基丙基及（環氧環己基）乙 95374.doc -25- 200523115 签用w之不飽和有機基團例如：3_甲基丙_氧以 基，3-丙烯醯氧基丙基；及諸如乙烯基、烯丙基、己烯基、. 十一烯基之不飽和單價烴基團。 · 母一 R獨立地為一具有至少丨個碳原子的未經取代、飽 和烴基團。R、具有高達4個碳原？，或者高達2個碳原 子。Rl8例如甲基、乙基、丙基及丁基。 適田之％氧官能烷氧基矽烷之實例包括3•縮水甘油氧基 丙基三甲氧基石夕炫、3-縮水甘油氧基丙基三乙氧基石夕烧、（環 氧環己基)乙基二甲氧基矽烷、(環氧環己基)乙基二乙氧基· 矽烷及其組合。適當之不飽和烷氧基矽烷之實例包括乙烯 基三甲氧基石夕燒、烯丙基三甲氧基石夕烧、稀丙基三乙氧基 石夕烷、己稀基三甲氧基矽烧、十一稀基三甲氧基矽烷二 甲基丙烯醯氧基丙基三甲氧基矽烷、3_甲基丙烯醯氧基丙 基三乙氧基錢、3·丙稀醯氧基丙基三甲氧基石夕烧、3-丙稀 醯氧基丙基三乙氧基矽烷、及其組合。 如上所述，組份（H)可包含環氧官能矽氧烷，諸如具有羥 # 基末端之聚有機矽氧烷與環氧官能烧氧基石夕烷的反應產 物’或具有經基末端之聚有機石夕氧烧與環氧官能烧氧基矽 烧的物理摻合物。組份（H)可包含環氧官能烧氧基石夕烧與環 氧=能石夕氧院的組合。舉例而言’組份⑻例如：3•縮水甘-油氧基丙基三甲氧基㈣及具有經基末端之甲基乙烯基石夕. 氧烧與3-縮水甘油氧基丙基三甲氧基石夕烧之反應產物的混 合物’或3-縮水甘油氧基丙基三甲氧基石夕烧與具有經基末 鳊之曱基乙烯基矽氧烷的混合物，或3 '缩水甘油氧基丙基 95374.doc -26 - 200523115 三甲氧基矽烷與具有羥基末端之甲基乙烯基/二甲基矽氧 烷共聚物的混合物。當將此等組份用作物理摻合物而不是 用作反應產物時，可將其分別儲存在多部分套組中。 適當之過渡金屬螯合劑包括鈦酸鹽、諸如乙醯基丙酮酸 鍅之鍅酸鹽、諸如乙醯基丙酮酸鋁之鋁螯合劑、及其組合。 過渡金屬螯合劑及其製備方法為此項技術中已為吾人所熟 知，例如參見，美國專利第5,248,715號、歐洲專利第0 493 791 A1號及歐洲專利第0 497 349 B1號。 組份（I)顏料 組份（I)為顏料。加入該組合物中之組份（I)的量取決於所 選顏料之類型。可將組份（I)以該組合物之重量計0.001 %至 3 0%的量添入該組合物中。顏料為此項技術中已為吾人所 熟知且是可購得的。適當之顏料包括：諸如來自Williams 之LB-1011C碳黑的碳黑；諸如Harcros G-6099之氧化鉻顏 料，；諸如彼等可自DuPont購得之二氧化鈦；及諸如（噻吩 二基（thiophenediyl))雙（第三-丁基苯幷°惡σ坐）之UV活性染 料，其可自 Ciba Specialty Chemicals 以 UVITEX ΟΒ之名稱 購得。 組份（J)流變改質劑 組份（J)是流變改質劑。可添入流變改質劑以改變該組合 物之觸變性質。組份（J)例如：流量控制添加劑；反應性稀 釋劑；抗沈降劑；α烯烴；具有羥基末端之聚矽氧有機共 聚物，其包括但不限於具有羥基末端之聚氧化丙烯-二曱基 石夕氧烧共聚物；及其組合。 95374.doc -27- 200523115 組份（κ)減少空隙劑 組份（Κ)是一種減少空隙劑。可將組份（Κ)以足以減少空 隙之量添入該組合物中。適當之減少空隙劑為此項技術中 已為吾人所熟知且是可購得的，例如參見歐洲專利第 0 850 997 Α2號及美國專利第4,273,902號及第5,684,060 號。適當之減少空隙劑可包含沸石、無水硫酸铭、分子篩（例 如，具有ιοΑ或更小之孔徑）、矽藻土、矽膠、活性碳、諸 如鈀金屬、在如碳或氧化鋁之基質上支撐的鈀金屬、及有 機Ιε化合物之把化合物。 組份（L)溶劑 組份（L)是可添入該組合物之溶劑。組份（L)可以是諸如鏈 烧、醇類、芳香族溶劑、sa或其組合之有機溶劑。 基板 可將該組合物應用至且適用於電子應用的合適之基板包 括但不限於：聚合物，諸如環氧樹脂、聚碳酸脂、聚（對苯 二甲酸丁二酯）樹脂、聚醯胺樹脂及其摻合物，諸如聚醯胺 樹月旨與諸如彼等自 Dow Chemical Company，of Midland， Michigan，U.S.A.購得之間同立構聚苯乙烯之摻合物、丙烯 腈-丁二烯-苯乙烯、苯乙烯改質之聚（苯醚）、聚（苯硫醚）、 乙烯基酯、聚鄰苯二甲醯胺、聚醯亞胺、及其組合；金屬， 諸如紹、不銹鋼合金、鈦、銅、鎳、銀、金、及其組合； 及半導體。適當之基板可為引線框或圖案化基板。半導體 為此項技術中已為吾人所熟知且是可購得的，例如參見J. Kroschwitz， ed.之 ’’Electronic Materials，’’ Kirk-Othmer 95374.doc -28- 200523115 四版本，第9卷 第2_ 頁，^ 導體包㈣、諸如碳切及氮化…合金、钟化鎵、： 化録。該半導體可具有任何便利之形式，諸如裸晶粒1 如1C晶片或LED晶片之晶片、或晶圓。 實例 此等實例意欲向-普通熟f此項技術者說明本發明且不 應被解釋為關陳述於t請專· g巾之本發明的範嘴。 實例1 將含有乙烯基官能聚矽氧聚合物、siH官能聚矽氧聚合 物、Pt催化劑、固化改質劑、5%之煙霧狀石夕石、及黏賤 進劑之可固化聚矽氧組合物藉由印刷而塗覆於一矽晶圓至 約100微米Um)的厚度。經由圖la、lb、1(：及1(1中說明之 層降杈板100來執行印刷。該層降模板1〇〇在後邊緣處具有 一最終厚度（至1密耳），其自5密耳厚的模板而被化學蝕刻。 圖1 a 1 b、1 c及1 d說明在實例1中使用之層降模板1 〇〇。 圖la展示了包括複數個方形隙縫1〇1之模板1〇〇的俯視圖。 每一隙缝101在後邊緣周圍具有一蝕刻區域1〇2。在實例工中 藉由使用一橡皮滾子以自圖la中模板1〇〇之前邊緣（頂部）向 後邊緣（底部）之方向推動可固化聚矽氧組合物而執行印刷。 圖lb展示了圖ia中模板ι〇〇之一部分的俯視圖，其包括一 隙縫101及一姓刻區域1〇2。隙縫ίο!具有6 mm之長度l〇ly 及6 mm之寬度ΐ〇ιχ。蝕刻區域ι〇2延伸超過隙縫ι〇1之後邊 緣0.5 mm的長度105。蝕刻區域1〇2具有2 mm之總長度 95374.doc -29- 200523115 103 + 105。蝕刻區域102延伸超過隙縫1〇1之每一邊㈤㈤之 寬度104。 圖lc展示了圖113中所示之具有隙縫1〇1的模板ι〇〇之該部 分的沿線Α之側視橫截面圖。模板1〇〇具有5密耳之厚度 ΙΟΟζ。蝕刻區域1〇2可具有扣^厂丨乃或丨密耳之厚度⑺匕。 圖Id展示了圖lb中具有隙縫101及蝕刻區域1〇2的模板 100之該部分的沿線B之側視橫截面圖。 表1展示了蝕刻區域l〇2z之高度及一墊之後邊緣處之邊 緣小山的高度與該墊之剩餘處的平均高度相比之％差異， 戎墊藉由將該組合物穿過模板1〇〇印刷以形成沈積物且固 化該沈積物而加以製備。 比較實例1 除非使用一具有6 mm X 6 mm之隙縫，隙縫之整個周邊周 圍具有5雄、耳之一致高度的模板來替代層降模板，否則重複 實例1。結果在表1中。 表1 實例 1-1 1-2 1-3 1-4 1-5 比較 實例1 蝕刻區域之高度， 102z(密耳） 4 3 2 1.5 1 0 邊緣小山南度 37 27 19 5 7 40 貫例1展示了在後邊緣處邊緣小山之減少與模板之階躍 深度有關。用標準模板印刷具有6 mm X 6 mm之方形的塾陣 列導致後邊緣處之唇緣比平均墊高出高達40%。 藉由將該墊表面在空氣及室溫中在丨〇〇瓦特（W)下電漿處 理10秒（s)將一矽晶粒結合至該等墊上來將一半導體晶粒附 95374.doc -30- 200523115 著至在實例1及比較實例1中形成之該等墊的表面。在比較 實例1中，在晶粒附著過程期間即使施加了相對較長的接觸 時間（10秒），結合仍引起表面之間的低界面接觸（3〇至術。) 及低晶粒剪切值（shear value)，正如圖3a及3b中所示。圖3a 展示了比較實例1之矽晶粒3 〇 〇，且圖3 b展示了晶粒剪切之& 後比較實例i之墊30卜位置3〇2處之邊緣小山造成該晶粒與 該墊之間的非接觸區域303，導致6〇至7〇%之接觸表面黏接 破壞（cohesive failure)304。 然而，使用經設計以使在藉由橡皮滾子運動而印刷期間 減少量之組合物沈積在後邊緣附近區域的層降模板消除了 表面不均勻性。在空氣及室溫中在100 w下電漿處理減少之 邊緣小山表面10 s用相對較短之接觸時間（1秒）結合— / 日曰 粒引起高界面接觸（〜100%)及高晶粒剪切值，正如圖4中所 示。圖4展示了矽晶粒400及晶粒剪切之後的印刷墊4〇1。在 位置402處邊緣小山的減少改良了該晶粒與該墊之間的接 觸區域403，導致80至90%之接觸表面黏接破壞4〇4。 工業適用性 藉由移除表面粗糙性（尤其是該墊之邊緣上的邊緣小山） 可改良墊與另一表面之間的黏接力。本發明之方法可用於 (例如）製造各種電子裝置，諸如MEMS裝置及堆疊晶片模 組。本發明之方法可用於各種電子封裝應用中，諸如晶圓 結合應用及晶圓級封裝應用。 【圖式簡單說明】 圖1 a展示了用於本發明之方法中的層降模板之俯視圖。 95374.doc -31- 200523115 圖ib展示了圖la中該模板之一部分的俯視圖。 圖1C係圖lb中忒杈板之該部分沿線A的側視橫截面圖。 圖Id係圖lb中該杈板之該部分沿線b的側視橫截面圖。 圖2展不了可藉由本發明之方法製備之一堆疊晶片模組 的示意圖。 圖3a係比較實例丨之半導體晶粒的圖片。 圖3b係比較實例1之墊的圖片。 圖4a係實例1之半導體晶粒的圖片。 圖4b係實例1之墊的圖片。 【主要元件符號說明】 100 層降模板 100z 模板之厚度 101 隙縫 10 lx 隙縫之寬度 101y 隙縫之長度 102 蝕刻區域 102z 钱刻區域之厚度 103 長度 104 長度 105 長度 200 堆豐晶片模組 201 基板 202 第一 1C晶片 203 晶粒附著黏接劑 95374.doc -32- 200523115 204 205 206 207 208 209 300 301 302 303 304 400 401 402 403 404 導線 晶粒附著黏接劑 第二1C晶片 導線 焊接球 重疊模塑 晶粒 墊 邊緣小山位置 非接觸區域 接觸表面黏接破壞區域 晶粒 墊 邊緣小山位置 接觸區域 接觸表面黏接破壞區域 95374.doc -33-

Claims (1)

  1. 200523115 十、申請專利範圍： 1 · 一種方法，其包含： a) 將一組合物之平頂沈積物塗覆至—# 一 弟一基板上； b) 硬化該平頂沈積物； C)將一第二基板黏接至該平頂沈積物之頂部， 其中步驟c)在步驟b)之前、期 ^間、或之後或其組合 執行；及 d)視需要重複步驟a)、b)及c)。 2. 如請求項1之方法 覆0 其中該平頂沈積物係藉由印刷來塗 3. :請求項1之方法，其中該沈積物係藉由使用一經改良之 篩網進行篩網㈣或使用—層降模板進行模板印刷來塗 覆之。 土 4·如.月求項1之方法，其中該組合物係選自熱炫合黏接劑或 可固化組合物。 5 ·如明求項1之方法，其中該組合物是一選自可固化聚矽氧 、、且a物、可固化聚矽氧_有機組合物 '或可固化有機組合 物之可固化組合物。 6·如睛求項丨之方法，其中該組合物是可固化聚矽氧組合 物0 如晴求項1之方法，其中該組合物包含： A) 每分子含有平均至少兩個脂肪不飽和有機基團的聚 有機石夕氧烧， B) 每分子含有平均至少兩個由矽鍵結之氫原子的聚有 95374.doc 200523115 機氫矽氧烷， C)石夕氫化反應催化劑， 視需要地選用D)固化改質劑， 視需要地選用E)填充劑， 視需要地選用F)用於該填充劑之處理劑， 視需要地選用G)間隔劑， 視需要地選用H)黏接促進劑， 視需要地選用I)顏料， 視需要地選用J)流變改質劑， 視需要地選用K)減少空隙劑，及 視需要地選用L)溶劑。 8. 如請求項！之方法，其中該第一基板及該第二基板中之至 少一個為一半導體晶粒。 9. 如請求们之方法，其中步驟b)係藉由加熱來執行。 10. 如請求们之方法，其中步驟C)係在步驟或之後執 行0 11 ·如請求項1之方法 程序包含： 其中步驟c)係藉由一程序來執行，該 1)活化該平頂墊之頂部，及 U)其後將該第二基板施加至該平頂墊之頂部。 12· —種方法，其包含： E卩刷至 〜半導 a)將一可固化聚矽氧組合物之平頂沈積物模板 一第一電子基板上， 其中該第-電子基板係選自一半導體晶粒或 95374.doc 200523115 體晶粒附著部件， 其中楔板印刷該平 十頂沈積物係藉由使橡皮滾子壓過 一層降模板來執行； b)固化该平頂沈積物以形成一平頂墊； 視而要^將一第二電子基板黏接至該平頂墊之頂部， 其中該第二電子基板係選自—半導體晶粒或一半導 體晶粒附著部件； 、 視需要d)重複步驟a)、b)及c)。 13. 14. 15. 裝 置 種藉由請求項1至12中任何—項之方法製備之電子 如請求項13之電子梦署，盆士 # u田 又中该衣置係選自MEMS裝置戋 堆疊晶片模組。 ^ 一種如請求項丨至12中任何一 ^ m ^ 之方法於選自晶圓結合 應用及晶圓級封裝應用之電子 包丁町攻應用中的用途。 95374.doc
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