TW200522204A - Method and equipment for heat treatment - Google Patents

Method and equipment for heat treatment Download PDF

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Publication number
TW200522204A
TW200522204A TW093127787A TW93127787A TW200522204A TW 200522204 A TW200522204 A TW 200522204A TW 093127787 A TW093127787 A TW 093127787A TW 93127787 A TW93127787 A TW 93127787A TW 200522204 A TW200522204 A TW 200522204A
Authority
TW
Taiwan
Prior art keywords
heat treatment
temperature
film
water vapor
substrate
Prior art date
Application number
TW093127787A
Other languages
English (en)
Chinese (zh)
Other versions
TWI362701B (enExample
Inventor
Shingo Hishiya
Kimiya Aoki
Masahisa Watanabe
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200522204A publication Critical patent/TW200522204A/zh
Application granted granted Critical
Publication of TWI362701B publication Critical patent/TWI362701B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76837—Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW093127787A 2003-10-06 2004-09-14 Method and equipment for heat treatment TW200522204A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003347420A JP4342895B2 (ja) 2003-10-06 2003-10-06 熱処理方法及び熱処理装置

Publications (2)

Publication Number Publication Date
TW200522204A true TW200522204A (en) 2005-07-01
TWI362701B TWI362701B (enExample) 2012-04-21

Family

ID=34540002

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093127787A TW200522204A (en) 2003-10-06 2004-09-14 Method and equipment for heat treatment

Country Status (4)

Country Link
US (2) US7563481B2 (enExample)
JP (1) JP4342895B2 (enExample)
KR (1) KR100870609B1 (enExample)
TW (1) TW200522204A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI505403B (zh) * 2008-02-29 2015-10-21 Merck Patent Gmbh 氧化矽質膜的形成方法及藉由它所形成的氧化矽質膜
CN112321856A (zh) * 2019-08-05 2021-02-05 东京毅力科创株式会社 成膜装置和成膜方法

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JP4342895B2 (ja) * 2003-10-06 2009-10-14 東京エレクトロン株式会社 熱処理方法及び熱処理装置
JP5091428B2 (ja) * 2005-06-14 2012-12-05 株式会社東芝 半導体装置の製造方法
JP4901221B2 (ja) * 2006-01-17 2012-03-21 株式会社東芝 半導体装置の製造方法
JP4748042B2 (ja) * 2006-11-30 2011-08-17 東京エレクトロン株式会社 熱処理方法、熱処理装置及び記憶媒体
WO2008083310A1 (en) * 2006-12-29 2008-07-10 3M Innovative Properties Company Method of curing metal alkoxide-containing films
EP2111480A2 (en) * 2006-12-29 2009-10-28 3M Innovative Properties Company Method of making inorganic or inorganic/organic hybrid films
KR100870322B1 (ko) 2007-02-09 2008-11-25 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 형성 방법
KR20080087416A (ko) * 2007-03-27 2008-10-01 주식회사 하이닉스반도체 반도체 메모리 소자의 소자 분리막 형성 방법
JP2009094321A (ja) * 2007-10-10 2009-04-30 Tokyo Electron Ltd ポリシラザン膜の形成方法
US8846169B2 (en) * 2007-12-28 2014-09-30 3M Innovative Properties Company Flexible encapsulating film systems
US8603246B2 (en) 2008-01-30 2013-12-10 Palo Alto Research Center Incorporated Growth reactor systems and methods for low-temperature synthesis of nanowires
JP5329825B2 (ja) 2008-02-25 2013-10-30 株式会社東芝 半導体装置の製造方法
CN102124137B (zh) * 2008-06-30 2013-09-11 3M创新有限公司 制备无机或无机/有机杂化阻挡膜的方法
JP4944228B2 (ja) * 2009-09-16 2012-05-30 株式会社日立国際電気 基板処理方法及び基板処理装置
JP5634366B2 (ja) * 2011-09-26 2014-12-03 株式会社東芝 成膜装置及び半導体装置の製造方法
JP5967845B2 (ja) * 2012-07-27 2016-08-10 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびプログラム
KR102120509B1 (ko) * 2012-11-22 2020-06-08 신에쓰 가가꾸 고교 가부시끼가이샤 복합 기판의 제조 방법 및 복합 기판
JP6137196B2 (ja) * 2012-12-07 2017-05-31 信越化学工業株式会社 インターポーザー用基板及びその製造方法
US9460997B2 (en) 2013-12-31 2016-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for semiconductor devices
JP6204213B2 (ja) * 2014-01-28 2017-09-27 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US20170160012A1 (en) * 2014-09-08 2017-06-08 Mitsubishi Electric Corporation Semiconductor annealing apparatus
JP2016134569A (ja) * 2015-01-21 2016-07-25 株式会社東芝 半導体製造装置
JP6616895B2 (ja) 2016-06-07 2019-12-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置および半導体装置の製造方法並びにプログラム
SG11202108355VA (en) * 2019-02-05 2021-08-30 Applied Materials Inc Multi channel splitter spool

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JP2929260B2 (ja) * 1993-12-31 1999-08-03 東京エレクトロン株式会社 塗布膜形成方法及びその装置
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KR100804444B1 (ko) * 2000-08-31 2008-02-20 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 패턴화된 폴리실라잔 막의 형성방법 및 감광성 폴리실라잔도막의 소성방법
KR100436495B1 (ko) * 2001-06-07 2004-06-22 삼성전자주식회사 스핀온글래스 조성물을 이용한 반도체 장치의 산화실리콘막 형성방법 및 이를 이용한 반도체 장치의 소자분리 방법
KR100364026B1 (ko) * 2001-02-22 2002-12-11 삼성전자 주식회사 층간 절연막 형성방법
JP3421660B2 (ja) * 2001-05-09 2003-06-30 東京エレクトロン株式会社 熱処理装置及びその方法
JP2004273519A (ja) * 2003-03-05 2004-09-30 Clariant (Japan) Kk トレンチ・アイソレーション構造の形成方法
JP3965167B2 (ja) * 2003-07-04 2007-08-29 東京エレクトロン株式会社 熱処理方法及び熱処理装置
JP4342895B2 (ja) * 2003-10-06 2009-10-14 東京エレクトロン株式会社 熱処理方法及び熱処理装置
JP4748042B2 (ja) * 2006-11-30 2011-08-17 東京エレクトロン株式会社 熱処理方法、熱処理装置及び記憶媒体
JP4944228B2 (ja) * 2009-09-16 2012-05-30 株式会社日立国際電気 基板処理方法及び基板処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI505403B (zh) * 2008-02-29 2015-10-21 Merck Patent Gmbh 氧化矽質膜的形成方法及藉由它所形成的氧化矽質膜
CN112321856A (zh) * 2019-08-05 2021-02-05 东京毅力科创株式会社 成膜装置和成膜方法

Also Published As

Publication number Publication date
KR20050033469A (ko) 2005-04-12
JP2005116706A (ja) 2005-04-28
US20090263292A1 (en) 2009-10-22
US20070231484A1 (en) 2007-10-04
US7563481B2 (en) 2009-07-21
US8122850B2 (en) 2012-02-28
JP4342895B2 (ja) 2009-10-14
KR100870609B1 (ko) 2008-11-25
TWI362701B (enExample) 2012-04-21

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