JP4342895B2 - 熱処理方法及び熱処理装置 - Google Patents

熱処理方法及び熱処理装置 Download PDF

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Publication number
JP4342895B2
JP4342895B2 JP2003347420A JP2003347420A JP4342895B2 JP 4342895 B2 JP4342895 B2 JP 4342895B2 JP 2003347420 A JP2003347420 A JP 2003347420A JP 2003347420 A JP2003347420 A JP 2003347420A JP 4342895 B2 JP4342895 B2 JP 4342895B2
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Japan
Prior art keywords
heat treatment
reaction vessel
temperature
water vapor
substrate
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Expired - Fee Related
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JP2003347420A
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English (en)
Japanese (ja)
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JP2005116706A (ja
Inventor
晋吾 菱屋
公也 青木
将久 渡邊
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2003347420A priority Critical patent/JP4342895B2/ja
Priority to TW093127787A priority patent/TW200522204A/zh
Priority to US10/956,125 priority patent/US7563481B2/en
Priority to KR1020040078885A priority patent/KR100870609B1/ko
Publication of JP2005116706A publication Critical patent/JP2005116706A/ja
Priority to US12/496,349 priority patent/US8122850B2/en
Application granted granted Critical
Publication of JP4342895B2 publication Critical patent/JP4342895B2/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76837—Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2003347420A 2003-10-06 2003-10-06 熱処理方法及び熱処理装置 Expired - Fee Related JP4342895B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2003347420A JP4342895B2 (ja) 2003-10-06 2003-10-06 熱処理方法及び熱処理装置
TW093127787A TW200522204A (en) 2003-10-06 2004-09-14 Method and equipment for heat treatment
US10/956,125 US7563481B2 (en) 2003-10-06 2004-10-04 Method and apparatus for processing polysilazane film
KR1020040078885A KR100870609B1 (ko) 2003-10-06 2004-10-05 열처리 방법 및 열처리 장치
US12/496,349 US8122850B2 (en) 2003-10-06 2009-07-01 Method and apparatus for processing polysilazane film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003347420A JP4342895B2 (ja) 2003-10-06 2003-10-06 熱処理方法及び熱処理装置

Publications (2)

Publication Number Publication Date
JP2005116706A JP2005116706A (ja) 2005-04-28
JP4342895B2 true JP4342895B2 (ja) 2009-10-14

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US (2) US7563481B2 (enExample)
JP (1) JP4342895B2 (enExample)
KR (1) KR100870609B1 (enExample)
TW (1) TW200522204A (enExample)

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JP4342895B2 (ja) * 2003-10-06 2009-10-14 東京エレクトロン株式会社 熱処理方法及び熱処理装置
JP5091428B2 (ja) * 2005-06-14 2012-12-05 株式会社東芝 半導体装置の製造方法
JP4901221B2 (ja) * 2006-01-17 2012-03-21 株式会社東芝 半導体装置の製造方法
JP4748042B2 (ja) * 2006-11-30 2011-08-17 東京エレクトロン株式会社 熱処理方法、熱処理装置及び記憶媒体
US20100068542A1 (en) * 2006-12-29 2010-03-18 3M Innovative Properties Company Method of making inorganic or inorganic/organic hybrid films
BRPI0721301A2 (pt) * 2006-12-29 2014-03-25 3M Innovative Properties Co Método para cura de filmes contendo alcóxido metálico
KR100870322B1 (ko) 2007-02-09 2008-11-25 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 형성 방법
KR20080087416A (ko) * 2007-03-27 2008-10-01 주식회사 하이닉스반도체 반도체 메모리 소자의 소자 분리막 형성 방법
JP2009094321A (ja) * 2007-10-10 2009-04-30 Tokyo Electron Ltd ポリシラザン膜の形成方法
US8846169B2 (en) * 2007-12-28 2014-09-30 3M Innovative Properties Company Flexible encapsulating film systems
US8603246B2 (en) * 2008-01-30 2013-12-10 Palo Alto Research Center Incorporated Growth reactor systems and methods for low-temperature synthesis of nanowires
JP5329825B2 (ja) 2008-02-25 2013-10-30 株式会社東芝 半導体装置の製造方法
JP5306669B2 (ja) * 2008-02-29 2013-10-02 ＡｚエレクトロニックマテリアルズＩｐ株式会社 シリカ質膜の形成方法およびそれにより形成されたシリカ質膜
US9481927B2 (en) * 2008-06-30 2016-11-01 3M Innovative Properties Company Method of making inorganic or inorganic/organic hybrid barrier films
JP4944228B2 (ja) * 2009-09-16 2012-05-30 株式会社日立国際電気 基板処理方法及び基板処理装置
JP5634366B2 (ja) * 2011-09-26 2014-12-03 株式会社東芝 成膜装置及び半導体装置の製造方法
CN104428877B (zh) * 2012-07-27 2016-12-07 株式会社日立国际电气 衬底处理装置、半导体器件的制造方法
JP6265130B2 (ja) * 2012-11-22 2018-01-24 信越化学工業株式会社 複合基板の製造方法
JP6137196B2 (ja) * 2012-12-07 2017-05-31 信越化学工業株式会社 インターポーザー用基板及びその製造方法
US9460997B2 (en) 2013-12-31 2016-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for semiconductor devices
JP6204213B2 (ja) * 2014-01-28 2017-09-27 東京エレクトロン株式会社 基板処理方法及び基板処理装置
WO2016038664A1 (ja) * 2014-09-08 2016-03-17 三菱電機株式会社 半導体アニール装置
JP2016134569A (ja) * 2015-01-21 2016-07-25 株式会社東芝 半導体製造装置
KR102326377B1 (ko) 2016-06-07 2021-11-15 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
KR20210113406A (ko) * 2019-02-05 2021-09-15 어플라이드 머티어리얼스, 인코포레이티드 다중 채널 분할기 스풀
JP7236953B2 (ja) * 2019-08-05 2023-03-10 東京エレクトロン株式会社 成膜装置および成膜方法

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KR100364026B1 (ko) * 2001-02-22 2002-12-11 삼성전자 주식회사 층간 절연막 형성방법
JP3421660B2 (ja) * 2001-05-09 2003-06-30 東京エレクトロン株式会社 熱処理装置及びその方法
JP2004273519A (ja) * 2003-03-05 2004-09-30 Clariant (Japan) Kk トレンチ・アイソレーション構造の形成方法
JP3965167B2 (ja) * 2003-07-04 2007-08-29 東京エレクトロン株式会社 熱処理方法及び熱処理装置
JP4342895B2 (ja) * 2003-10-06 2009-10-14 東京エレクトロン株式会社 熱処理方法及び熱処理装置
JP4748042B2 (ja) * 2006-11-30 2011-08-17 東京エレクトロン株式会社 熱処理方法、熱処理装置及び記憶媒体
JP4944228B2 (ja) * 2009-09-16 2012-05-30 株式会社日立国際電気 基板処理方法及び基板処理装置

Also Published As

Publication number Publication date
KR100870609B1 (ko) 2008-11-25
TW200522204A (en) 2005-07-01
US8122850B2 (en) 2012-02-28
US20070231484A1 (en) 2007-10-04
KR20050033469A (ko) 2005-04-12
TWI362701B (enExample) 2012-04-21
US7563481B2 (en) 2009-07-21
US20090263292A1 (en) 2009-10-22
JP2005116706A (ja) 2005-04-28

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