SG59936A1 - Active matrix circuit boad thin-film transistor and a manufacturing method of these - Google Patents

Active matrix circuit boad thin-film transistor and a manufacturing method of these

Info

Publication number
SG59936A1
SG59936A1 SG1996002601A SG1996002601A SG59936A1 SG 59936 A1 SG59936 A1 SG 59936A1 SG 1996002601 A SG1996002601 A SG 1996002601A SG 1996002601 A SG1996002601 A SG 1996002601A SG 59936 A1 SG59936 A1 SG 59936A1
Authority
SG
Singapore
Prior art keywords
thin
manufacturing
film transistor
active matrix
matrix circuit
Prior art date
Application number
SG1996002601A
Other languages
English (en)
Inventor
Yudasaka Ichio
Matsuo Minoru
Takenka Satoshi
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of SG59936A1 publication Critical patent/SG59936A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
SG1996002601A 1993-02-10 1994-02-09 Active matrix circuit boad thin-film transistor and a manufacturing method of these SG59936A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2284093 1993-02-10
JP8485693 1993-04-12
JP16574993 1993-07-05
JP22456293 1993-09-09
JP31697193 1993-12-16

Publications (1)

Publication Number Publication Date
SG59936A1 true SG59936A1 (en) 1999-02-22

Family

ID=27520486

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996002601A SG59936A1 (en) 1993-02-10 1994-02-09 Active matrix circuit boad thin-film transistor and a manufacturing method of these

Country Status (8)

Country Link
US (1) US5563427A (de)
EP (2) EP0923134B1 (de)
JP (1) JP3941120B2 (de)
KR (1) KR100309935B1 (de)
DE (2) DE69434235T2 (de)
SG (1) SG59936A1 (de)
TW (1) TW259884B (de)
WO (1) WO1994018706A1 (de)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2653099B2 (ja) * 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル，投写型表示装置及びビューファインダー
US6975296B1 (en) * 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US5953582A (en) * 1993-02-10 1999-09-14 Seiko Epson Corporation Active matrix panel manufacturing method including TFTS having variable impurity concentration levels
US5719065A (en) * 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
JPH07135323A (ja) * 1993-10-20 1995-05-23 Semiconductor Energy Lab Co Ltd 薄膜状半導体集積回路およびその作製方法
US6433361B1 (en) 1994-04-29 2002-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit and method for forming the same
DE19500380C2 (de) * 1994-05-20 2001-05-17 Mitsubishi Electric Corp Aktivmatrix-Flüssigkristallanzeige und Herstellungsverfahren dafür
US6104041A (en) * 1994-08-24 2000-08-15 Sarnoff Corporation Switching circuitry layout for an active matrix electroluminescent display pixel with each pixel provided with the transistors
US5587329A (en) * 1994-08-24 1996-12-24 David Sarnoff Research Center, Inc. Method for fabricating a switching transistor having a capacitive network proximate a drift region
US6242289B1 (en) 1995-09-08 2001-06-05 Semiconductor Energy Laboratories Co., Ltd. Method for producing semiconductor device
US5712191A (en) * 1994-09-16 1998-01-27 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US5814529A (en) 1995-01-17 1998-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor
US6011607A (en) * 1995-02-15 2000-01-04 Semiconductor Energy Laboratory Co., Active matrix display with sealing material
JP3292657B2 (ja) * 1995-04-10 2002-06-17 キヤノン株式会社 薄膜トランジスタ及びそれを用いた液晶表示装置の製造法
KR100254647B1 (ko) 1995-05-17 2000-05-01 야스카와 히데아키 액정 표시 장치와 그 구동 방법 및 이에 이용되는 구동 회로 및 전원 회로 장치
US6790714B2 (en) 1995-07-03 2004-09-14 Sanyo Electric Co., Ltd. Semiconductor device, display device and method of fabricating the same
US5771110A (en) 1995-07-03 1998-06-23 Sanyo Electric Co., Ltd. Thin film transistor device, display device and method of fabricating the same
US5763904A (en) * 1995-09-14 1998-06-09 Kabushiki Kaisha Toshiba Non-single crystal semiconductor apparatus thin film transistor and liquid crystal display apparatus
JP3216502B2 (ja) * 1995-10-16 2001-10-09 株式会社日立製作所 Ｃｍｏｓ薄膜半導体装置及びその製造方法
TW322591B (de) * 1996-02-09 1997-12-11 Handotai Energy Kenkyusho Kk
JP3527009B2 (ja) 1996-03-21 2004-05-17 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
TW334581B (en) 1996-06-04 1998-06-21 Handotai Energy Kenkyusho Kk Semiconductor integrated circuit and fabrication method thereof
EP1465257A1 (de) * 1996-09-26 2004-10-06 Seiko Epson Corporation Anzeigevorrichtung
JP4059292B2 (ja) * 1996-09-26 2008-03-12 セイコーエプソン株式会社 表示装置
JP4127416B2 (ja) * 1997-07-16 2008-07-30 株式会社半導体エネルギー研究所 光センサ、光センサの作製方法、リニアイメージセンサ及びエリアセンサ
JP4271268B2 (ja) 1997-09-20 2009-06-03 株式会社半導体エネルギー研究所 イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置
JPH11326954A (ja) * 1998-05-15 1999-11-26 Semiconductor Energy Lab Co Ltd 半導体装置
JP3483484B2 (ja) 1998-12-28 2004-01-06 富士通ディスプレイテクノロジーズ株式会社 半導体装置、画像表示装置、半導体装置の製造方法、及び画像表示装置の製造方法
EP1020920B1 (de) * 1999-01-11 2010-06-02 Sel Semiconductor Energy Laboratory Co., Ltd. Halbleiteranordnung mit Treiber-TFT und Pixel-TFT auf einem Substrat
US6590229B1 (en) 1999-01-21 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for production thereof
JP4372943B2 (ja) 1999-02-23 2009-11-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US6777254B1 (en) 1999-07-06 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6952020B1 (en) 1999-07-06 2005-10-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4727029B2 (ja) * 1999-11-29 2011-07-20 株式会社半導体エネルギー研究所 Ｅｌ表示装置、電気器具及びｅｌ表示装置用の半導体素子基板
TWI245957B (en) * 2000-08-09 2005-12-21 Hitachi Ltd Active matrix display device
KR100380140B1 (ko) * 2000-09-25 2003-04-11 엘지.필립스 엘시디 주식회사 액정표시장치용 패널 및 그의 제조방법
SG138468A1 (en) * 2001-02-28 2008-01-28 Semiconductor Energy Lab A method of manufacturing a semiconductor device
JP2002334994A (ja) * 2001-03-07 2002-11-22 Seiko Epson Corp 電気光学装置および電気光学装置の製造方法、電気光学装置用基板、投射型表示装置並びに電子機器
JP4662647B2 (ja) * 2001-03-30 2011-03-30 シャープ株式会社 表示装置及びその製造方法
TW543145B (en) * 2001-10-11 2003-07-21 Samsung Electronics Co Ltd A thin film transistor array panel and a method of the same
KR100864487B1 (ko) * 2001-12-19 2008-10-20 삼성전자주식회사 비쥬얼 인스펙션 수단을 구비한 박막 트랜지스터 기판 및비쥬얼 인스펙션 방법
KR100816336B1 (ko) * 2001-10-11 2008-03-24 삼성전자주식회사 박막 트랜지스터 기판 및 그 제조 방법
TWI291729B (en) 2001-11-22 2007-12-21 Semiconductor Energy Lab A semiconductor fabricating apparatus
TWI267145B (en) 2001-11-30 2006-11-21 Semiconductor Energy Lab Manufacturing method for a semiconductor device
US7133737B2 (en) 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
US7214573B2 (en) * 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
JP3992976B2 (ja) * 2001-12-21 2007-10-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4030758B2 (ja) * 2001-12-28 2008-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
JP3989763B2 (ja) 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
TWI270919B (en) 2002-04-15 2007-01-11 Semiconductor Energy Lab Display device and method of fabricating the same
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
JP4030885B2 (ja) * 2003-01-27 2008-01-09 シャープ株式会社 薄膜トランジスタ基板の製造方法
TWI247180B (en) * 2004-08-06 2006-01-11 Au Optronics Corp Thin film transistor structure for flat panel display and method for fabricating the same
WO2006064606A1 (ja) * 2004-12-14 2006-06-22 Sharp Kabushiki Kaisha 半導体装置及びその製造方法
JP4957942B2 (ja) * 2005-08-05 2012-06-20 Ｎｌｔテクノロジー株式会社 薄膜トランジスタを備えた半導体装置の製造方法
DE102006009280B4 (de) * 2006-03-01 2007-11-29 Universität Stuttgart Verfahren zur Herstellung von komplementären Transistoren und entsprechend hergestellte Transistoranordnung
EP2008264B1 (de) * 2006-04-19 2016-11-16 Ignis Innovation Inc. Stabiles ansteuerverfahren für aktivmatrix-displays
JP4179393B2 (ja) * 2006-09-14 2008-11-12 エプソンイメージングデバイス株式会社 表示装置及びその製造方法
JP2008205248A (ja) * 2007-02-21 2008-09-04 Seiko Epson Corp 半導体装置及びその製造方法、電気光学装置及びその製造方法、並びに電子機器
JP4998142B2 (ja) * 2007-08-23 2012-08-15 セイコーエプソン株式会社 電気光学装置及び電子機器
KR20100060652A (ko) * 2008-11-28 2010-06-07 주식회사 동부하이텍 반도체 소자의 제조 방법
CN104538455A (zh) 2014-12-31 2015-04-22 上海天马有机发光显示技术有限公司 一种轻掺杂漏极区的制作方法、薄膜晶体管及阵列基板
US9508860B2 (en) * 2014-12-31 2016-11-29 Shenzhen China Star Optoelectronics Technology Co., Ltd. Lateral gate electrode TFT switch and liquid crystal display device
US10504899B2 (en) * 2017-11-30 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Transistors with various threshold voltages and method for manufacturing the same
JP2020004859A (ja) * 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
WO2020039588A1 (ja) 2018-08-24 2020-02-27 シャープ株式会社 表示デバイスの製造方法および表示デバイス
WO2020059479A1 (ja) * 2018-09-18 2020-03-26 ソニー株式会社 表示装置及び電子機器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4528480A (en) * 1981-12-28 1985-07-09 Nippon Telegraph & Telephone AC Drive type electroluminescent display device
JPS59205762A (ja) * 1983-05-10 1984-11-21 Seiko Epson Corp 半導体装置の製造方法
JPH061786B2 (ja) * 1984-02-07 1994-01-05 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JPS63204769A (ja) * 1987-02-20 1988-08-24 Nippon Telegr & Teleph Corp <Ntt> 薄膜トランジスタの製造方法
JP2653099B2 (ja) * 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル，投写型表示装置及びビューファインダー
JPH02246277A (ja) * 1989-03-20 1990-10-02 Matsushita Electron Corp Ｍｏｓトランジスタおよびその製造方法
JP2796175B2 (ja) * 1990-06-05 1998-09-10 松下電器産業株式会社 薄膜トランジスターの製造方法
JP2658569B2 (ja) * 1990-11-28 1997-09-30 日本電気株式会社 薄膜トランジスタおよびその製造方法
JP2504630B2 (ja) * 1991-03-20 1996-06-05 株式会社ジーティシー アクティブマトリックス基板
JP3277548B2 (ja) * 1991-05-08 2002-04-22 セイコーエプソン株式会社 ディスプレイ基板
JP2650543B2 (ja) * 1991-11-25 1997-09-03 カシオ計算機株式会社 マトリクス回路駆動装置
JP3072637B2 (ja) * 1991-12-25 2000-07-31 セイコーエプソン株式会社 アクティブマトリクス基板
JPH05183164A (ja) * 1991-12-28 1993-07-23 Nec Corp 半導体素子
JP2666103B2 (ja) * 1992-06-03 1997-10-22 カシオ計算機株式会社 薄膜半導体装置
JP3291038B2 (ja) * 1992-09-28 2002-06-10 株式会社半導体エネルギー研究所 半導体回路の作製方法

Also Published As

Publication number Publication date
EP0635890B1 (de) 2002-05-29
EP0923134A1 (de) 1999-06-16
DE69430687T2 (de) 2002-11-21
EP0923134B1 (de) 2005-01-12
WO1994018706A1 (en) 1994-08-18
DE69434235T2 (de) 2005-12-08
TW259884B (de) 1995-10-11
DE69434235D1 (de) 2005-02-17
JP3941120B2 (ja) 2007-07-04
KR100309935B1 (ko) 2002-06-20
KR950701142A (ko) 1995-02-20
US5563427A (en) 1996-10-08
DE69430687D1 (de) 2002-07-04
EP0635890A1 (de) 1995-01-25
EP0635890A4 (de) 1995-12-13

Similar Documents

Publication Publication Date Title
SG59936A1 (en) Active matrix circuit boad thin-film transistor and a manufacturing method of these
EP0513590A3 (en) Thin-film transistor and method for manufacturing it
GB9408054D0 (en) A field effect transistor and a production method thereof
EP0332217A3 (en) A thin-film transistor operable at high voltage and a method for manufacturing the same
SG64308A1 (en) Thin-film semiconductor device method of fabricating thin-film semiconductor device and display system using the same
EP0658944A3 (de) Dünnschichthalbleitervorrichtung und Herstellungsverfahren.
EP0456338A3 (en) An active matrix display device and a method of manufacturing the same
HK1005420A1 (en) Semiconductor device and manufacturing method thereof
IL113095A0 (en) Thin film electronic devices and manufacturing method
EP0453169A3 (en) Method of forming a mask and a thin-film transistor
AU7499994A (en) Device and method for external correction of insufficient valves in venous junctions
GB2297647B (en) Organic electroluminescent display device and method for manufacturing same
GB9406900D0 (en) Manufacture of electronic devices comprising thin -film transistors
EP0596601A3 (en) Transistors and methods for fabrication thereof
EP0768716A3 (de) Bipolartransistor und Verfahren zur Herstellung
EP0696105A3 (de) Schaltung und Verfahren zum Steuern eines Transistors
GB2285173B (en) Semiconductor device and manufacturing method thereof
EP0738004A4 (de) Verfahren und anordnung für die herstellung eines halbleitersubstates
GB9315798D0 (en) Manufacture of electronic devices comprising thin-film transistors
SG68542A1 (en) Semiconductor device and manufacturing method thereof
KR970004025B1 (en) Electronic circuit device and manufacturing method thereof
AU5015993A (en) An electronic golf performance aid device and method thereof
EP0634797A3 (de) Dünnfilm-Halbleiteranordnung für Anzeigetafel mit aktiver Matrix und Verfahren zur Herstellung.
EP0520560A3 (en) Thin-film transistors and their manufacture
EP0481454A3 (en) Lateral mos fet and manufacturing method thereof