SG45388A1 - Deposited film formation method utilizing selective deposition by use of alkyl aluminium - Google Patents

Deposited film formation method utilizing selective deposition by use of alkyl aluminium

Info

Publication number
SG45388A1
SG45388A1 SG1996005589A SG1996005589A SG45388A1 SG 45388 A1 SG45388 A1 SG 45388A1 SG 1996005589 A SG1996005589 A SG 1996005589A SG 1996005589 A SG1996005589 A SG 1996005589A SG 45388 A1 SG45388 A1 SG 45388A1
Authority
SG
Singapore
Prior art keywords
film formation
formation method
method utilizing
aluminum
deposited film
Prior art date
Application number
SG1996005589A
Other languages
English (en)
Inventor
Kazuo Tsubouchi
Kazuya Masu
Nobuo Mikoshiba
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of SG45388A1 publication Critical patent/SG45388A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
SG1996005589A 1989-09-26 1990-09-25 Deposited film formation method utilizing selective deposition by use of alkyl aluminium SG45388A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25002189 1989-09-26
JP2036198A JP2721023B2 (ja) 1989-09-26 1990-02-19 堆積膜形成法

Publications (1)

Publication Number Publication Date
SG45388A1 true SG45388A1 (en) 1998-01-16

Family

ID=26375242

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996005589A SG45388A1 (en) 1989-09-26 1990-09-25 Deposited film formation method utilizing selective deposition by use of alkyl aluminium

Country Status (10)

Country Link
US (2) US5180687A (pt)
EP (1) EP0420595B1 (pt)
JP (1) JP2721023B2 (pt)
KR (1) KR940010501B1 (pt)
AT (1) ATE137605T1 (pt)
DE (1) DE69026783T2 (pt)
ES (1) ES2086375T3 (pt)
MY (1) MY107418A (pt)
PT (1) PT95430B (pt)
SG (1) SG45388A1 (pt)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940011005B1 (ko) * 1989-09-09 1994-11-22 캐논 가부시끼가이샤 알킬 알루미늄 하이드라이드를 이용한 퇴적막 형성법
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
JPH0437067A (ja) * 1990-05-31 1992-02-07 Canon Inc 半導体素子用電極及び該電極を有する半導体装置及びその製造方法
DE69125210T2 (de) * 1990-05-31 1997-08-07 Canon Kk Verfahren zur Herstellung einer Halbleitervorrichtung mit einer Verdrahtungsstruktur hoher Dichte
MY107475A (en) * 1990-05-31 1995-12-30 Canon Kk Semiconductor device and method for producing the same.
EP0460861B1 (en) * 1990-05-31 2001-09-19 Canon Kabushiki Kaisha Semiconductor device with improved wiring structure
EP0498580A1 (en) * 1991-02-04 1992-08-12 Canon Kabushiki Kaisha Method for depositing a metal film containing aluminium by use of alkylaluminium halide
JPH04346231A (ja) * 1991-05-23 1992-12-02 Canon Inc 半導体装置の製造方法
JP3061891B2 (ja) * 1991-06-21 2000-07-10 キヤノン株式会社 半導体装置の製造方法
JPH05209279A (ja) * 1991-10-29 1993-08-20 Canon Inc 金属膜形成装置および金属膜形成法
US6004885A (en) * 1991-12-26 1999-12-21 Canon Kabushiki Kaisha Thin film formation on semiconductor wafer
US5447568A (en) * 1991-12-26 1995-09-05 Canon Kabushiki Kaisha Chemical vapor deposition method and apparatus making use of liquid starting material
JP3222518B2 (ja) * 1991-12-26 2001-10-29 キヤノン株式会社 液体原料気化装置および薄膜形成装置
JP3048749B2 (ja) * 1992-04-28 2000-06-05 キヤノン株式会社 薄膜形成方法
US5486492A (en) * 1992-10-30 1996-01-23 Kawasaki Steel Corporation Method of forming multilayered wiring structure in semiconductor device
KR970001883B1 (ko) * 1992-12-30 1997-02-18 삼성전자 주식회사 반도체장치 및 그 제조방법
US5654245A (en) * 1993-03-23 1997-08-05 Sharp Microelectronics Technology, Inc. Implantation of nucleating species for selective metallization and products thereof
JPH09501612A (ja) * 1994-04-08 1997-02-18 マーク エー． レイ， 選択的プラズマ成長
US6159854A (en) * 1994-08-22 2000-12-12 Fujitsu Limited Process of growing conductive layer from gas phase
KR100413890B1 (ko) * 1995-03-02 2004-03-19 동경 엘렉트론 주식회사 반도체장치의제조방법및제조장치
KR100440418B1 (ko) * 1995-12-12 2004-10-20 텍사스 인스트루먼츠 인코포레이티드 저압,저온의반도체갭충전처리방법
KR0172851B1 (ko) * 1995-12-19 1999-03-30 문정환 반도체 장치의 배선방법
KR100198624B1 (ko) * 1995-12-20 1999-06-15 구본준 반도체 소자의 제조방법
US5856236A (en) * 1996-06-14 1999-01-05 Micron Technology, Inc. Method of depositing a smooth conformal aluminum film on a refractory metal nitride layer
US6309971B1 (en) 1996-08-01 2001-10-30 Cypress Semiconductor Corporation Hot metallization process
US5907763A (en) * 1996-08-23 1999-05-25 International Business Machines Corporation Method and device to monitor integrated temperature in a heat cycle process
US5924012A (en) 1996-10-02 1999-07-13 Micron Technology, Inc. Methods, complexes, and system for forming metal-containing films
US6130160A (en) * 1996-10-02 2000-10-10 Micron Technology, Inc. Methods, complexes and system for forming metal-containing films
US6025269A (en) * 1996-10-15 2000-02-15 Micron Technology, Inc. Method for depositioning a substantially void-free aluminum film over a refractory metal nitride layer
US6156645A (en) * 1996-10-25 2000-12-05 Cypress Semiconductor Corporation Method of forming a metal layer on a substrate, including formation of wetting layer at a high temperature
US6451179B1 (en) * 1997-01-30 2002-09-17 Applied Materials, Inc. Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US5858464A (en) * 1997-02-13 1999-01-12 Applied Materials, Inc. Methods and apparatus for minimizing excess aluminum accumulation in CVD chambers
US5969423A (en) 1997-07-15 1999-10-19 Micron Technology, Inc. Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition
US6222271B1 (en) 1997-07-15 2001-04-24 Micron Technology, Inc. Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom
JPH11150084A (ja) 1997-09-12 1999-06-02 Canon Inc 半導体装置および基板上への非晶質窒化硅素チタンの形成方法
US6156393A (en) * 1997-11-12 2000-12-05 John C. Polanyi Method of molecular-scale pattern imprinting at surfaces
US6878417B2 (en) * 1997-11-12 2005-04-12 John C. Polanyi Method of molecular-scale pattern imprinting at surfaces
US6319566B1 (en) 1997-11-12 2001-11-20 John C. Polanyi Method of molecular-scale pattern imprinting at surfaces
US6057238A (en) * 1998-03-20 2000-05-02 Micron Technology, Inc. Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom
KR100279067B1 (ko) 1998-04-23 2001-01-15 신현국 화학증착용알루미늄화합물및그제조방법
US6214729B1 (en) 1998-09-01 2001-04-10 Micron Technology, Inc. Metal complexes with chelating C-, N-donor ligands for forming metal-containing films
US6281124B1 (en) 1998-09-02 2001-08-28 Micron Technology, Inc. Methods and systems for forming metal-containing films on substrates
KR100289945B1 (ko) 1998-09-15 2001-09-17 신현국 알루미늄박막의화학증착용전구체화합물및이의제조방법
US7211512B1 (en) 2000-01-18 2007-05-01 Micron Technology, Inc. Selective electroless-plated copper metallization
JP2001308094A (ja) * 2000-04-19 2001-11-02 Oki Electric Ind Co Ltd 配線薄膜の堆積方法
US6500250B1 (en) 2000-05-26 2002-12-31 Rohn And Haas Company Compounds for forming alumina films using chemical vapor deposition method and process for preparing the compound
US7223694B2 (en) * 2003-06-10 2007-05-29 Intel Corporation Method for improving selectivity of electroless metal deposition
CN103147067A (zh) * 2011-12-07 2013-06-12 无锡华润华晶微电子有限公司 低压化学气相淀积装置及其薄膜淀积方法
US10014213B2 (en) * 2015-10-15 2018-07-03 Tokyo Electron Limited Selective bottom-up metal feature filling for interconnects
WO2019177861A1 (en) 2018-03-10 2019-09-19 Applied Materials, Inc. Method and apparatus for asymmetric selective physical vapor deposition
US10950448B2 (en) 2018-04-06 2021-03-16 Applied Materials, Inc. Film quality control in a linear scan physical vapor deposition process
US10927450B2 (en) 2018-12-19 2021-02-23 Applied Materials, Inc. Methods and apparatus for patterning substrates using asymmetric physical vapor deposition
DE102019122078A1 (de) * 2019-08-16 2021-02-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer Aluminiumschicht und optisches Element

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB822214A (en) * 1957-08-01 1959-10-21 Integral Ltd Improvements in reciprocating pumps
GB1595659A (en) * 1978-05-25 1981-08-12 Standard Telephones Cables Ltd Providing conductive tracks on semiconductor devices
GB2041983B (en) * 1978-11-09 1982-12-01 Standard Telephones Cables Ltd Metallising semiconductor devices
GB2038883B (en) * 1978-11-09 1982-12-08 Standard Telephones Cables Ltd Metallizing semiconductor devices
US4433012A (en) * 1980-07-10 1984-02-21 Itt Industries, Inc. Process for the pyrolytic deposition of aluminum from TIBA
US4497683A (en) * 1982-05-03 1985-02-05 At&T Bell Laboratories Process for producing dielectrically isolated silicon devices
JPH0682633B2 (ja) * 1985-04-05 1994-10-19 富士通株式会社 アルミニウム膜の成長方法
WO1986006756A1 (en) * 1985-05-03 1986-11-20 American Telephone & Telegraph Company Method of making a device comprising a patterned aluminum layer
JPS6211227A (ja) * 1985-07-09 1987-01-20 Fujitsu Ltd 半導体装置の製造方法
JPS62105422A (ja) * 1985-11-01 1987-05-15 Hitachi Ltd 半導体装置の製造方法
US4824802A (en) * 1986-02-28 1989-04-25 General Electric Company Method of filling interlevel dielectric via or contact holes in multilevel VLSI metallization structures
JPS62216224A (ja) * 1986-03-17 1987-09-22 Fujitsu Ltd タングステンの選択成長方法
JP2559030B2 (ja) * 1986-07-25 1996-11-27 日本電信電話株式会社 金属薄膜の製造方法
JP2534848B2 (ja) * 1986-09-08 1996-09-18 富士通株式会社 高融点金属の選択成長法
US4960732A (en) * 1987-02-19 1990-10-02 Advanced Micro Devices, Inc. Contact plug and interconnect employing a barrier lining and a backfilled conductor material
US4902645A (en) * 1987-08-24 1990-02-20 Fujitsu Limited Method of selectively forming a silicon-containing metal layer
US4786615A (en) * 1987-08-31 1988-11-22 Motorola Inc. Method for improved surface planarity in selective epitaxial silicon
JPS6485026A (en) * 1987-09-25 1989-03-30 Toyo Sangyo Kk Rearing cage for experimental animal
JPH01198475A (ja) * 1988-02-02 1989-08-10 Anelva Corp 薄膜作製方法
US4963511A (en) * 1987-11-30 1990-10-16 Texas Instruments Incorporated Method of reducing tungsten selectivity to a contact sidewall
JPH01252776A (ja) * 1988-03-31 1989-10-09 Sony Corp 気相成長アルミニウム膜形成方法
US4898841A (en) * 1988-06-16 1990-02-06 Northern Telecom Limited Method of filling contact holes for semiconductor devices and contact structures made by that method
JPH0212913A (ja) * 1988-06-30 1990-01-17 Nippon Telegr & Teleph Corp <Ntt> 金属または半導体の電極・配線形成方法
JP2617529B2 (ja) * 1988-08-24 1997-06-04 日本電信電話株式会社 金属膜の形成方法
JPH0276624A (ja) * 1988-09-13 1990-03-16 Mitsubishi Electric Corp 放電加工装置
JP2570839B2 (ja) * 1988-12-22 1997-01-16 日本電気株式会社 Ａ▲ｌ▼ーＣｕ合金薄膜形成方法
JPH02185026A (ja) * 1989-01-11 1990-07-19 Nec Corp Ａｌ薄膜の選択的形成方法
JP2578193B2 (ja) * 1989-02-01 1997-02-05 沖電気工業株式会社 半導体素子の製造方法
US4923717A (en) * 1989-03-17 1990-05-08 Regents Of The University Of Minnesota Process for the chemical vapor deposition of aluminum
US4920403A (en) * 1989-04-17 1990-04-24 Hughes Aircraft Company Selective tungsten interconnection for yield enhancement
US5196372A (en) * 1989-09-09 1993-03-23 Canon Kabushiki Kaisha Process for forming metal deposited film containing aluminum as main component by use of alkyl hydride
PT95232B (pt) * 1989-09-09 1998-06-30 Canon Kk Processo de producao de uma pelicula de aluminio depositada
JP2726118B2 (ja) * 1989-09-26 1998-03-11 キヤノン株式会社 堆積膜形成法
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
ATE136159T1 (de) * 1989-09-26 1996-04-15 Canon Kk Verfahren zum herstellen einer abgeschiedenen schicht, und verfahren zum herstellen einer halbleitervorrichtung
ATE137063T1 (de) * 1989-09-26 1996-05-15 Canon Kk Verfahren zur herstellung von einer abgeschiedenen metallschicht, die aluminium als hauptkomponent enthält, mit anwendung von alkalimetallaluminiumhydride
EP0448223B1 (en) * 1990-02-19 1996-06-26 Canon Kabushiki Kaisha Process for forming metal deposited film containing aluminium as main component by use of alkyl aluminum hydride

Also Published As

Publication number Publication date
EP0420595B1 (en) 1996-05-01
KR940010501B1 (ko) 1994-10-24
US5393699A (en) 1995-02-28
JP2721023B2 (ja) 1998-03-04
EP0420595A2 (en) 1991-04-03
US5180687A (en) 1993-01-19
JPH03202471A (ja) 1991-09-04
KR910007084A (ko) 1991-04-30
EP0420595A3 (en) 1991-09-11
ATE137605T1 (de) 1996-05-15
PT95430A (pt) 1991-05-22
DE69026783T2 (de) 1996-11-14
PT95430B (pt) 1997-07-31
MY107418A (en) 1995-12-30
ES2086375T3 (es) 1996-07-01
DE69026783D1 (de) 1996-06-05

Similar Documents

Publication Publication Date Title
SG45388A1 (en) Deposited film formation method utilizing selective deposition by use of alkyl aluminium
GR3019282T3 (en) Process for forming deposited film by use of alkyl aluminum hydride
SG43924A1 (en) Process for forming metal deposited film containing aluminium as main component by use of alkyl aluminium hydride
EP0448223A3 (en) Process for forming metal deposited film containing aluminium as main component by use of alkyl aluminum hydride
ES8206918A1 (es) Procedimiento para la fabricacion de celulas solares de capade silicio
SG45420A1 (en) Process for forming deposited film by use of alkyl aluminum hydride and process for preparing semiconductor device
AT381959B (de) Vorrichtung zur kontinuierlichen, mit hoher stromdichte erfolgenden elektrolytischen abscheidung einer abdeckmetallschicht
JPS57153427A (en) Manufacture of thin film device
DE3266912D1 (en) Method for producing metal layers on substrates by electroless plating techniques
CA2061302A1 (en) Method of making synthetic diamond film
JPS644216A (en) Production of thin membrane for separating gas
GR3018958T3 (en) Process for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydride.
TW365031B (en) TiN+Al films and processes
CA2044763A1 (en) Process for producing spray-plated metal strip
Yoshida The Adherence of Porcelain Enamel to Steel Sheet
JPS6462213A (en) Diamond coated die for wire drawing
FR2385224A1 (fr) Procede de realisation de reseaux de connexion pour circuits integres et circuits integres comportant des reseaux realises par un tel procede
Nageswar Effect of Nickel Ions on the Growth Habit of Copper Electrodeposits
JPS5732359A (en) Continuous hot dipping device
TH11143EX (th) กรรมวิธีสำหรับจัดรูปแบบฟิล์ม ซึ่งถูกฝากสะสมโลหะที่มีอาลูมีอาลูมิเนียมเป็นส่วนประกอบหลักโดยการใช้อัลคีน อาลูมินัม ไฮไดรด์