SG11201403616WA - Method for manufacturing bonded soi wafer - Google Patents
Method for manufacturing bonded soi waferInfo
- Publication number
- SG11201403616WA SG11201403616WA SG11201403616WA SG11201403616WA SG11201403616WA SG 11201403616W A SG11201403616W A SG 11201403616WA SG 11201403616W A SG11201403616W A SG 11201403616WA SG 11201403616W A SG11201403616W A SG 11201403616WA SG 11201403616W A SG11201403616W A SG 11201403616WA
- Authority
- SG
- Singapore
- Prior art keywords
- soi
- layer surface
- soi layer
- treatment
- rto
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 238000011282 treatment Methods 0.000 abstract 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000003746 surface roughness Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
- H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Element Separation (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012012256A JP5673572B2 (ja) | 2012-01-24 | 2012-01-24 | 貼り合わせsoiウェーハの製造方法 |
PCT/JP2012/008300 WO2013111242A1 (ja) | 2012-01-24 | 2012-12-26 | 貼り合わせsoiウェーハの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201403616WA true SG11201403616WA (en) | 2014-12-30 |
Family
ID=48873020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201403616WA SG11201403616WA (en) | 2012-01-24 | 2012-12-26 | Method for manufacturing bonded soi wafer |
Country Status (7)
Country | Link |
---|---|
US (1) | US9093497B2 (ja) |
EP (1) | EP2808889B1 (ja) |
JP (1) | JP5673572B2 (ja) |
KR (1) | KR101846931B1 (ja) |
CN (1) | CN104115255B (ja) |
SG (1) | SG11201403616WA (ja) |
WO (1) | WO2013111242A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016201454A (ja) * | 2015-04-09 | 2016-12-01 | 信越半導体株式会社 | Soiウェーハの製造方法 |
CN104891430B (zh) * | 2015-04-17 | 2016-09-28 | 上海华虹宏力半导体制造有限公司 | 硅片键合方法 |
JP6380245B2 (ja) * | 2015-06-15 | 2018-08-29 | 信越半導体株式会社 | Soiウェーハの製造方法 |
CN106653677A (zh) * | 2016-09-22 | 2017-05-10 | 东莞市联洲知识产权运营管理有限公司 | 一种soi片的制备方法 |
JP6531743B2 (ja) * | 2016-09-27 | 2019-06-19 | 信越半導体株式会社 | 貼り合わせsoiウェーハの製造方法 |
US11715639B2 (en) * | 2016-11-29 | 2023-08-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and fabrication method therefor |
CN106601615B (zh) * | 2016-12-27 | 2020-05-15 | 上海新傲科技股份有限公司 | 提高键合强度的退火方法 |
JP6834932B2 (ja) * | 2017-12-19 | 2021-02-24 | 株式会社Sumco | 貼り合わせウェーハ用の支持基板の製造方法および貼り合わせウェーハの製造方法 |
CN110400773B (zh) * | 2018-04-24 | 2022-06-07 | 沈阳硅基科技有限公司 | 一种采用快速热处理工艺制备soi硅片的方法 |
FR3132380A1 (fr) * | 2022-01-31 | 2023-08-04 | Soitec | Procédé de fabrication d’une structure de type double semi-conducteur sur isolant |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
JPH11307472A (ja) | 1998-04-23 | 1999-11-05 | Shin Etsu Handotai Co Ltd | 水素イオン剥離法によってsoiウエーハを製造する方法およびこの方法で製造されたsoiウエーハ |
JP2000124092A (ja) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってsoiウエーハを製造する方法およびこの方法で製造されたsoiウエーハ |
EP1408551B1 (en) * | 2001-07-17 | 2014-07-02 | Shin-Etsu Handotai Co., Ltd. | Method for producing bonding wafer |
JP2004281805A (ja) * | 2003-03-17 | 2004-10-07 | Sumitomo Mitsubishi Silicon Corp | 半導体ウェーハの平坦化処理方法 |
ATE441206T1 (de) | 2004-12-28 | 2009-09-15 | Soitec Silicon On Insulator | Verfahren zum erhalten einer dünnen schicht mit einer geringen dichte von líchern |
JP4715470B2 (ja) * | 2005-11-28 | 2011-07-06 | 株式会社Sumco | 剥離ウェーハの再生加工方法及びこの方法により再生加工された剥離ウェーハ |
JP5125194B2 (ja) * | 2007-04-10 | 2013-01-23 | 信越半導体株式会社 | 貼り合わせウエーハの製造方法 |
JP5135935B2 (ja) | 2007-07-27 | 2013-02-06 | 信越半導体株式会社 | 貼り合わせウエーハの製造方法 |
JP2009289948A (ja) * | 2008-05-29 | 2009-12-10 | Sumco Corp | 貼り合わせウェーハの製造方法 |
-
2012
- 2012-01-24 JP JP2012012256A patent/JP5673572B2/ja active Active
- 2012-12-26 SG SG11201403616WA patent/SG11201403616WA/en unknown
- 2012-12-26 US US14/371,048 patent/US9093497B2/en active Active
- 2012-12-26 KR KR1020147020725A patent/KR101846931B1/ko active IP Right Grant
- 2012-12-26 WO PCT/JP2012/008300 patent/WO2013111242A1/ja active Application Filing
- 2012-12-26 EP EP12866461.2A patent/EP2808889B1/en active Active
- 2012-12-26 CN CN201280067455.4A patent/CN104115255B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP2013153016A (ja) | 2013-08-08 |
CN104115255B (zh) | 2016-08-24 |
EP2808889B1 (en) | 2016-10-26 |
KR101846931B1 (ko) | 2018-04-10 |
EP2808889A1 (en) | 2014-12-03 |
KR20140123505A (ko) | 2014-10-22 |
WO2013111242A1 (ja) | 2013-08-01 |
EP2808889A4 (en) | 2015-09-30 |
JP5673572B2 (ja) | 2015-02-18 |
US9093497B2 (en) | 2015-07-28 |
US20150017783A1 (en) | 2015-01-15 |
CN104115255A (zh) | 2014-10-22 |
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