SG10201911900YA - Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device - Google Patents
Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor deviceInfo
- Publication number
- SG10201911900YA SG10201911900YA SG10201911900YA SG10201911900YA SG10201911900YA SG 10201911900Y A SG10201911900Y A SG 10201911900YA SG 10201911900Y A SG10201911900Y A SG 10201911900YA SG 10201911900Y A SG10201911900Y A SG 10201911900YA SG 10201911900Y A SG10201911900Y A SG 10201911900YA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- mask
- semiconductor device
- mask blank
- manufacturing semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0015—Production of aperture devices, microporous systems or stamps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017034706 | 2017-02-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201911900YA true SG10201911900YA (en) | 2020-02-27 |
Family
ID=63253886
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201911900YA SG10201911900YA (en) | 2017-02-27 | 2018-01-24 | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
SG11201907771TA SG11201907771TA (en) | 2017-02-27 | 2018-01-24 | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
SG10201911903XA SG10201911903XA (en) | 2017-02-27 | 2018-01-24 | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201907771TA SG11201907771TA (en) | 2017-02-27 | 2018-01-24 | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
SG10201911903XA SG10201911903XA (en) | 2017-02-27 | 2018-01-24 | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
Country Status (7)
Country | Link |
---|---|
US (3) | US11281089B2 (zh) |
JP (7) | JP6415768B2 (zh) |
KR (4) | KR102429244B1 (zh) |
CN (1) | CN110383167B (zh) |
SG (3) | SG10201911900YA (zh) |
TW (4) | TWI726192B (zh) |
WO (1) | WO2018155047A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG10201911900YA (en) * | 2017-02-27 | 2020-02-27 | Hoya Corp | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
KR20210118885A (ko) * | 2019-03-07 | 2021-10-01 | 호야 가부시키가이샤 | 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 |
JP7313166B2 (ja) * | 2019-03-18 | 2023-07-24 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法 |
CN110707130A (zh) * | 2019-09-04 | 2020-01-17 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其制作方法 |
KR20240033148A (ko) * | 2019-10-29 | 2024-03-12 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크 및 반사형 마스크 |
CN117480411A (zh) * | 2021-04-06 | 2024-01-30 | 尼尔特瑞士有限公司 | 具有由高折射率材料构成的元原子的光学超微结构 |
WO2022240752A1 (en) * | 2021-05-10 | 2022-11-17 | Applied Materials, Inc. | Methods of greytone imprint lithography to fabricate optical devices |
WO2023112767A1 (ja) * | 2021-12-13 | 2023-06-22 | Agc株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
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JP2016188958A (ja) | 2015-03-30 | 2016-11-04 | Hoya株式会社 | マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法 |
JP6544964B2 (ja) * | 2015-03-31 | 2019-07-17 | Hoya株式会社 | マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法 |
JP6477159B2 (ja) * | 2015-03-31 | 2019-03-06 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランクス及びハーフトーン位相シフトマスクブランクスの製造方法 |
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WO2017038213A1 (ja) * | 2015-08-31 | 2017-03-09 | Hoya株式会社 | マスクブランク、位相シフトマスクおよびその製造方法、並びに半導体デバイスの製造方法 |
JP6158460B1 (ja) | 2015-11-06 | 2017-07-05 | Hoya株式会社 | マスクブランク、位相シフトマスクの製造方法、及び半導体デバイスの製造方法 |
WO2017090485A1 (ja) * | 2015-11-27 | 2017-06-01 | Hoya株式会社 | マスクブランク用基板、多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
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SG10201911900YA (en) * | 2017-02-27 | 2020-02-27 | Hoya Corp | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
JP6808566B2 (ja) | 2017-04-08 | 2021-01-06 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法 |
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2018
- 2018-01-24 SG SG10201911900YA patent/SG10201911900YA/en unknown
- 2018-01-24 KR KR1020227015762A patent/KR102429244B1/ko active IP Right Grant
- 2018-01-24 SG SG11201907771TA patent/SG11201907771TA/en unknown
- 2018-01-24 KR KR1020197024790A patent/KR102273801B1/ko active IP Right Grant
- 2018-01-24 SG SG10201911903XA patent/SG10201911903XA/en unknown
- 2018-01-24 US US16/488,901 patent/US11281089B2/en active Active
- 2018-01-24 CN CN201880014226.3A patent/CN110383167B/zh active Active
- 2018-01-24 KR KR1020217020525A patent/KR102365595B1/ko active IP Right Grant
- 2018-01-24 WO PCT/JP2018/002072 patent/WO2018155047A1/ja active Application Filing
- 2018-01-24 KR KR1020227005244A patent/KR102398092B1/ko active IP Right Grant
- 2018-02-13 TW TW107105192A patent/TWI726192B/zh active
- 2018-02-13 TW TW110114187A patent/TWI786605B/zh active
- 2018-02-13 TW TW112142109A patent/TW202409711A/zh unknown
- 2018-02-13 TW TW111141884A patent/TWI819878B/zh active
- 2018-02-22 JP JP2018030096A patent/JP6415768B2/ja active Active
- 2018-10-02 JP JP2018187468A patent/JP6575957B2/ja active Active
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2019
- 2019-08-14 JP JP2019148893A patent/JP6767551B2/ja active Active
- 2019-08-14 JP JP2019148894A patent/JP6732081B2/ja active Active
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2020
- 2020-07-07 JP JP2020117297A patent/JP6920775B2/ja active Active
- 2020-09-17 JP JP2020156495A patent/JP7030164B2/ja active Active
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2022
- 2022-02-10 US US17/668,597 patent/US11762279B2/en active Active
- 2022-02-21 JP JP2022024928A patent/JP7201853B2/ja active Active
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2023
- 2023-07-25 US US18/226,165 patent/US12007684B2/en active Active
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