SG10201605686XA - Polishing Composition And Polishing Method Using The Same - Google Patents

Polishing Composition And Polishing Method Using The Same

Info

Publication number
SG10201605686XA
SG10201605686XA SG10201605686XA SG10201605686XA SG10201605686XA SG 10201605686X A SG10201605686X A SG 10201605686XA SG 10201605686X A SG10201605686X A SG 10201605686XA SG 10201605686X A SG10201605686X A SG 10201605686XA SG 10201605686X A SG10201605686X A SG 10201605686XA
Authority
SG
Singapore
Prior art keywords
polishing
same
composition
polishing composition
polishing method
Prior art date
Application number
SG10201605686XA
Other languages
English (en)
Inventor
Takahiro Mizuno
Yoshihiro Izawa
Tomohiko Akatsuka
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG10201605686XA publication Critical patent/SG10201605686XA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG10201605686XA 2008-02-01 2009-01-29 Polishing Composition And Polishing Method Using The Same SG10201605686XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008023229 2008-02-01
JP2008151969 2008-06-10

Publications (1)

Publication Number Publication Date
SG10201605686XA true SG10201605686XA (en) 2016-08-30

Family

ID=40912840

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201605686XA SG10201605686XA (en) 2008-02-01 2009-01-29 Polishing Composition And Polishing Method Using The Same
SG2013007075A SG188090A1 (en) 2008-02-01 2009-01-29 Polishing composition and polishing method using the same

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2013007075A SG188090A1 (en) 2008-02-01 2009-01-29 Polishing composition and polishing method using the same

Country Status (8)

Country Link
US (1) US10144849B2 (ko)
EP (1) EP2237311A4 (ko)
JP (2) JPWO2009096495A1 (ko)
KR (2) KR101564676B1 (ko)
CN (2) CN102084465A (ko)
SG (2) SG10201605686XA (ko)
TW (1) TWI554600B (ko)
WO (1) WO2009096495A1 (ko)

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JP5860057B2 (ja) * 2011-10-24 2016-02-16 株式会社フジミインコーポレーテッド 研磨用組成物、それを用いた研磨方法及び基板の製造方法
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WO2018055985A1 (ja) * 2016-09-23 2018-03-29 株式会社フジミインコーポレーテッド 研磨用組成物、ならびにこれを用いた研磨方法および半導体基板の製造方法
JP7153566B2 (ja) * 2017-01-11 2022-10-14 株式会社フジミインコーポレーテッド 研磨用組成物
CN110312776B (zh) * 2017-02-17 2021-11-30 福吉米株式会社 研磨用组合物、其制造方法和使用研磨用组合物的研磨方法
WO2018168206A1 (ja) 2017-03-14 2018-09-20 株式会社フジミインコーポレーテッド 研磨用組成物、その製造方法ならびにこれを用いた研磨方法および基板の製造方法
WO2018193916A1 (ja) * 2017-04-17 2018-10-25 日産化学株式会社 両性界面活性剤を含む研磨用組成物
CN109971356A (zh) * 2017-12-27 2019-07-05 安集微电子（上海）有限公司 一种化学机械抛光液
CN109971358A (zh) * 2017-12-27 2019-07-05 安集微电子（上海）有限公司 一种化学机械抛光液
JP7128005B2 (ja) * 2018-03-26 2022-08-30 株式会社フジミインコーポレーテッド 研磨用組成物
JP7237933B2 (ja) * 2018-03-28 2023-03-13 株式会社フジミインコーポレーテッド 研磨用組成物
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CN111378377A (zh) * 2018-12-29 2020-07-07 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
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CN114591686B (zh) * 2022-03-11 2023-05-26 万华化学集团电子材料有限公司 一种铜阻挡层化学机械抛光液及其应用
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US20100301014A1 (en) 2010-12-02
CN103131330A (zh) 2013-06-05
CN103131330B (zh) 2015-09-23
KR101564676B1 (ko) 2015-11-02
KR20100121469A (ko) 2010-11-17
EP2237311A1 (en) 2010-10-06
JP2013251561A (ja) 2013-12-12
KR20140146225A (ko) 2014-12-24
TWI554600B (zh) 2016-10-21
EP2237311A4 (en) 2011-11-30
WO2009096495A1 (ja) 2009-08-06
SG188090A1 (en) 2013-03-28
JP5695708B2 (ja) 2015-04-08
KR101564673B1 (ko) 2015-10-30
JPWO2009096495A1 (ja) 2011-05-26
CN102084465A (zh) 2011-06-01
US10144849B2 (en) 2018-12-04
TW200946660A (en) 2009-11-16

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