TWI554600B - 研磨用組成物及使用該組成物研磨之方法 - Google Patents
研磨用組成物及使用該組成物研磨之方法 Download PDFInfo
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- TWI554600B TWI554600B TW098103228A TW98103228A TWI554600B TW I554600 B TWI554600 B TW I554600B TW 098103228 A TW098103228 A TW 098103228A TW 98103228 A TW98103228 A TW 98103228A TW I554600 B TWI554600 B TW I554600B
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- Prior art keywords
- polishing composition
- acid
- nitrogen
- germanium
- group
- Prior art date
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- YKOQQFDCCBKROY-UHFFFAOYSA-N n,n-diethylpropanamide Chemical compound CCN(CC)C(=O)CC YKOQQFDCCBKROY-UHFFFAOYSA-N 0.000 description 1
- TWJYXMZUQAMMKA-UHFFFAOYSA-N n,n-dimethyl-1-(oxiran-2-yl)methanamine Chemical compound CN(C)CC1CO1 TWJYXMZUQAMMKA-UHFFFAOYSA-N 0.000 description 1
- MBHINSULENHCMF-UHFFFAOYSA-N n,n-dimethylpropanamide Chemical compound CCC(=O)N(C)C MBHINSULENHCMF-UHFFFAOYSA-N 0.000 description 1
- KXAVXHYIOCQWIB-UHFFFAOYSA-N n-(dimethylaminooxy)-n-methylmethanamine Chemical compound CN(C)ON(C)C KXAVXHYIOCQWIB-UHFFFAOYSA-N 0.000 description 1
- OQJBFFCUFALWQL-UHFFFAOYSA-N n-(piperidine-1-carbonylimino)piperidine-1-carboxamide Chemical compound C1CCCCN1C(=O)N=NC(=O)N1CCCCC1 OQJBFFCUFALWQL-UHFFFAOYSA-N 0.000 description 1
- HWZKQIRJZPOEQF-UHFFFAOYSA-N n-acetyl-n-methoxyacetamide Chemical compound CON(C(C)=O)C(C)=O HWZKQIRJZPOEQF-UHFFFAOYSA-N 0.000 description 1
- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical compound O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 description 1
- YVPGYPWDDYIQJP-UHFFFAOYSA-N n-ethyl-n-methylpyrrolidin-3-amine Chemical compound CCN(C)C1CCNC1 YVPGYPWDDYIQJP-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N n-hexanoic acid Natural products CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- OYVXVLSZQHSNDK-UHFFFAOYSA-N n-methoxy-n-methylacetamide Chemical compound CON(C)C(C)=O OYVXVLSZQHSNDK-UHFFFAOYSA-N 0.000 description 1
- SEEYREPSKCQBBF-UHFFFAOYSA-N n-methylmaleimide Chemical compound CN1C(=O)C=CC1=O SEEYREPSKCQBBF-UHFFFAOYSA-N 0.000 description 1
- ONLRKTIYOMZEJM-UHFFFAOYSA-N n-methylmethanamine oxide Chemical compound C[NH+](C)[O-] ONLRKTIYOMZEJM-UHFFFAOYSA-N 0.000 description 1
- 229960002362 neostigmine Drugs 0.000 description 1
- 229960001499 neostigmine bromide Drugs 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 125000000018 nitroso group Chemical group N(=O)* 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 229960003994 oxacillin sodium Drugs 0.000 description 1
- 125000003145 oxazol-4-yl group Chemical group O1C=NC(=C1)* 0.000 description 1
- 125000004043 oxo group Chemical group O=* 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- LSQZJLSUYDQPKJ-UHFFFAOYSA-N p-Hydroxyampicillin Natural products O=C1N2C(C(O)=O)C(C)(C)SC2C1NC(=O)C(N)C1=CC=C(O)C=C1 LSQZJLSUYDQPKJ-UHFFFAOYSA-N 0.000 description 1
- 239000006179 pH buffering agent Substances 0.000 description 1
- WEYVCQFUGFRXOM-UHFFFAOYSA-N perazine Chemical compound C1CN(C)CCN1CCCN1C2=CC=CC=C2SC2=CC=CC=C21 WEYVCQFUGFRXOM-UHFFFAOYSA-N 0.000 description 1
- 229960002195 perazine Drugs 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- UYWQUFXKFGHYNT-UHFFFAOYSA-N phenylmethyl ester of formic acid Natural products O=COCC1=CC=CC=C1 UYWQUFXKFGHYNT-UHFFFAOYSA-N 0.000 description 1
- WCMIIGXFCMNQDS-IDYPWDAWSA-M piperacillin sodium Chemical compound [Na+].O=C1C(=O)N(CC)CCN1C(=O)N[C@H](C=1C=CC=CC=1)C(=O)N[C@@H]1C(=O)N2[C@@H](C([O-])=O)C(C)(C)S[C@@H]21 WCMIIGXFCMNQDS-IDYPWDAWSA-M 0.000 description 1
- 229960005264 piperacillin sodium Drugs 0.000 description 1
- IWELDVXSEVIIGI-UHFFFAOYSA-N piperazin-2-one Chemical compound O=C1CNCCN1 IWELDVXSEVIIGI-UHFFFAOYSA-N 0.000 description 1
- 150000003053 piperidines Chemical class 0.000 description 1
- MXXWOMGUGJBKIW-YPCIICBESA-N piperine Chemical compound C=1C=C2OCOC2=CC=1/C=C/C=C/C(=O)N1CCCCC1 MXXWOMGUGJBKIW-YPCIICBESA-N 0.000 description 1
- 229940075559 piperine Drugs 0.000 description 1
- WVWHRXVVAYXKDE-UHFFFAOYSA-N piperine Natural products O=C(C=CC=Cc1ccc2OCOc2c1)C3CCCCN3 WVWHRXVVAYXKDE-UHFFFAOYSA-N 0.000 description 1
- 235000019100 piperine Nutrition 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 108010064470 polyaspartate Proteins 0.000 description 1
- 229920000120 polyethyl acrylate Polymers 0.000 description 1
- 229920002643 polyglutamic acid Polymers 0.000 description 1
- 229920000656 polylysine Polymers 0.000 description 1
- 229920001444 polymaleic acid Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- SHNUBALDGXWUJI-UHFFFAOYSA-N pyridin-2-ylmethanol Chemical compound OCC1=CC=CC=N1 SHNUBALDGXWUJI-UHFFFAOYSA-N 0.000 description 1
- 229960002151 pyridostigmine bromide Drugs 0.000 description 1
- 150000003235 pyrrolidines Chemical class 0.000 description 1
- 229960000948 quinine Drugs 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 150000003284 rhodium compounds Chemical class 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229940071089 sarcosinate Drugs 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical compound [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- VDUVBBMAXXHEQP-ZTRPPZFVSA-M sodium;(2s,6r)-3,3-dimethyl-6-[(5-methyl-3-phenyl-1,2-oxazole-4-carbonyl)amino]-7-oxo-4-thia-1-azabicyclo[3.2.0]heptane-2-carboxylate Chemical compound [Na+].N([C@@H]1C(N2[C@H](C(C)(C)SC21)C([O-])=O)=O)C(=O)C1=C(C)ON=C1C1=CC=CC=C1 VDUVBBMAXXHEQP-ZTRPPZFVSA-M 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- CMIBWIAICVBURI-SSDOTTSWSA-N tert-butyl (3r)-3-aminopyrrolidine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CC[C@@H](N)C1 CMIBWIAICVBURI-SSDOTTSWSA-N 0.000 description 1
- LZRDHSFPLUWYAX-UHFFFAOYSA-N tert-butyl 4-aminopiperidine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCC(N)CC1 LZRDHSFPLUWYAX-UHFFFAOYSA-N 0.000 description 1
- PWQLFIKTGRINFF-UHFFFAOYSA-N tert-butyl 4-hydroxypiperidine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCC(O)CC1 PWQLFIKTGRINFF-UHFFFAOYSA-N 0.000 description 1
- ROUYFJUVMYHXFJ-UHFFFAOYSA-N tert-butyl 4-oxopiperidine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCC(=O)CC1 ROUYFJUVMYHXFJ-UHFFFAOYSA-N 0.000 description 1
- FQFILJKFZCVHNH-UHFFFAOYSA-N tert-butyl n-[3-[(5-bromo-2-chloropyrimidin-4-yl)amino]propyl]carbamate Chemical compound CC(C)(C)OC(=O)NCCCNC1=NC(Cl)=NC=C1Br FQFILJKFZCVHNH-UHFFFAOYSA-N 0.000 description 1
- XYKYUXYNQDXZTD-UHFFFAOYSA-N tert-butyl n-methyl-n-pyrrolidin-3-ylcarbamate Chemical compound CC(C)(C)OC(=O)N(C)C1CCNC1 XYKYUXYNQDXZTD-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- 125000000464 thioxo group Chemical group S=* 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 235000013769 triethyl citrate Nutrition 0.000 description 1
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 1
- 229960004791 tropicamide Drugs 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本發明係關於主要用於研磨矽材料之研磨用組成物及使用該組成物研磨之方法，其中該矽材料例如為單晶矽、非晶矽、多晶矽等單體矽，以及氮化矽、氧化矽等矽化合物。
例如，有時候在半導體裝置之製程中會進行研磨，以去除單晶矽、非晶矽、多晶矽等單體矽之至少一部分。此等研磨通常係使用鹼性研磨用組成物來進行(例如參照專利文獻1及2)。然而，至今所知的研磨用組成物大多未必能以充分滿足使用者要求那樣高的去除速率來研磨單體矽。
又，例如欲將單體矽與氮化矽、氧化矽等矽化合物同時研磨，而期望使用中性或酸性研磨用組成物。然而，使用至今所知的中性或酸性研磨用組成物難以用充分滿足使用者要求那樣高的去除速率來研磨單體矽。
就與本發明相關之先前技術而言，不僅可列舉前述之專利文獻1及2，還可以列舉專利文獻3至6。
專利文獻1：日本特表2002-525383號公報
專利文獻2：日本特開平7-249600號公報
專利文獻3：日本特開2001-031951號公報
專利文獻4：日本特開2006-060205號公報
專利文獻5：日本特開平11-302633號公報
專利文獻6：日本特開2004-266155號公報
本發明之目的在於提供一種適合用於研磨如單體矽及矽化合物等矽材料之研磨用組成物及使用該組成物研磨之方法。
為了達成前述之目的，在本發明之第一態樣中提供一種研磨用組成物，其含有含氮化合物及研磨粒，且pH為1至7。
第一態樣之研磨用組成物中所含之含氮化合物較佳具有通式(1)：R1
-N(-R2
)-R3
所示之構造(其中，R1
、R2
及R3
分別表示烷基、或特性基附加於烷基而成之基團，R1
至R3
中之二個可構成雜環之一部分，或R1
至R3
中之二個相連，並與剩餘之一個共同構成雜環之一部分)。
具有前述通式(1)所示構造之化合物較佳具有通式(2)：R1
-N(-R2
)-C(=O)-R4
所示之構造(其中，R1
、R2
及R4
分別表示烷基、或特性基附加於烷基而成之基團，R1
或R2
可與R4
共同構成雜環之一部分)，或者為胺基酸型兩性界面活性劑或胺型非離子界面活性劑。
或者，第一態樣之研磨用組成物中所含之含氮化合物較佳為羧基甜菜鹼型兩性界面活性劑、磺酸基甜菜鹼型兩性界面活性劑、咪唑啉型兩性界面活性劑及胺氧化物型兩性界面活性劑中之任一種。
在本發明之第二態樣中提供一種研磨用組成物，其含有水溶性高分子及研磨粒，不含氧化劑，且pH為1至8。
第二態樣之研磨用組成物中所含之水溶性高分子較佳為多醣、聚羧酸、聚羧酸醯胺、聚羧酸酯、聚羧酸鹽、聚磺酸及乙烯系聚合物中之任一者。
在本發明之第三態樣中提供一種研磨方法，其特徵為：使用前述第一或第二態樣之研磨用組成物來研磨矽材料。
[第一實施態樣]
以下說明本發明之第一實施態樣。
本實施態樣之研磨用組成物係藉由將含氮化合物及研磨粒，視情況連同pH調整劑及pH緩衝劑，於水中混合，以使pH在1至7之範圍內而製成。因此，研磨用組成物含有含氮化合物、研磨粒及水，視情況可進一步含有pH調整劑及pH緩衝劑。
本實施態樣之研磨用組成物主要用於研磨矽材料，即單晶矽、非晶矽、多晶矽等單體矽及氮化矽、氧化矽等矽化合物，更具體而言，例如研磨單結晶矽基板等矽基板，或是研磨矽基板上所形成的非晶矽膜、多晶矽膜等單體矽膜或氮化矽膜、氧化矽膜等矽化合物膜。矽化合物膜含有相對介電常數(relative permittivity)為3以下的低介電常數膜。
含氮化合物，具體而言，可列舉胺類、醯胺類、亞胺類、醯亞胺類、尿素類、銨類、第四級銨類、胺基酸類、胺磺酸類及胺膦酸類。胺類及醯胺類，依據氮原子上取代基之數目可分類為第一級、第二級、第三級。第一級胺類包括甲胺、乙胺、丁胺、乙二胺、甘胺酸、丙胺酸、纈胺酸等；第二級胺類包括哌、哌啶、嗎啉、N-甲甘胺酸等；第三級胺類包括甲基哌啶、乙基哌啶、甲基吡咯啶、N,N-二甲基乙醯胺、N,N-二乙基乙醯胺等。
適合用來作為研磨用組成物中所含的含氮化合物係具有通式(1)：R1
-N(-R2
)-R3
所示之構造之化合物。在通式(1)中，R1
、R2
及R3
分別表示烷基、或特性基附加於烷基而成的基團。R1
至R3
中之二個可構成雜環之一部分，R1
至R3
中之二個相連，與剩餘之一個共同構成雜環之一部分。就附加於烷基的特性基，可列舉鹵素、羥基、胺基、亞胺基、N-氧化物(N-oxide)、N-羥基、肼、硝基、亞硝基、偶氮基、二偶氮基、疊氮基、氧基(oxy)、環氧基、側氧基(oxo)、羰基、苯基、膦基(phosphino)、硫基、S-氧化物、硫酮基(thioxo)。具有通式(1)所示構造的化合物中，R1
至R3
中之二個構成雜環之一部分之化合物之具體例，可列舉：甲基哌啶、乙基哌啶等哌啶類及其類似化合物；甲基吡咯啶等吡咯啶類及其類似化合物；甲基吡咯等吡咯類及其類似化合物；甲基嗎啉等嗎啉類及其類似化合物；甲基哌 及二甲基哌等哌類及其類似化合物；以及六亞甲基四胺、DABCD(1,4-二氮雙環[2.2.2]辛烷)、奎寧及其類似化合物。又，R1
至R3
中之二個相連、與剩餘之一個共同構成雜環之一部分之化合物之具體例，可列舉咪唑、吡唑、三唑、四唑、噻唑、異噻唑、唑、異唑、吡啶、吡、嘧啶、嗒、及該等之類似化合物。又，在此所稱的類似化合物皆包括任一種衍生物。
具有通式(1)所示構造的化合物中，具有通式(2)：R1
-N(-R2
)-C(=O)-R4
所示構造的化合物尤其適合用作研磨用組成物中所含的含氮化合物。但是，通式(2)中，R1
、R2
及R4
分別表示烷基、或特性基附加於烷基而成的基團。R1
或R2
可與R4
共同構成雜環之一部分。附加於烷基之特性基之具體例如前所述。就具有通式(2)所示構造之化合物之具體例而言，可列舉N,N-二甲基乙醯胺、1-甲基-2-吡咯啶酮、N,N-二甲基丙烯醯胺、1-乙烯基-2-吡咯啶酮、N,N-二甲基乙醯基乙醯胺、N,N-二乙基丙烯醯胺、N-十二醯基肌胺酸鈉水合物、1-(2-羥基乙基)-2-吡咯啶酮、N-油醯基肌胺酸、1-環己基-2-吡咯啶酮、N-苯基馬來醯亞胺、N-乙烯基-ε-己內醯胺、N-十二醯基肌胺酸、1-正辛基-2-吡咯啶酮、N-乙醯乙醯基嗎啉、N-(2-乙基己基)-5-冰片烯-2,3-二羧基醯亞胺、1,3,5-三丙烯醯基六氫-1,3,5-三、4-丙烯醯基嗎啉、N,N-二乙基乙醯乙醯胺、N-乙醯基-ε-己內醯胺、N-酞醯基甘胺酸、4,4’-雙馬來亞醯胺二苯甲烷、N,N-二甲基丙醯胺、4-乙醯基嗎啉、N-羥甲基酞醯亞胺、N,N-二乙基十二烷醯胺、N,N’-1,3-伸苯基二馬來醯亞胺、N,N-二乙基乙醯胺、N-(2-羥乙基)酞醯亞胺、1,3-二甲基巴比妥酸、N-乙氧羰基酞醯亞胺、7-(2-羥乙基)茶鹼、N-甲基-ε-己內醯胺、貳(3-乙基-5-甲基-4-馬來醯亞胺基苯基)甲烷、肌內醯胺基酯、1,2-貳(馬來醯亞胺基)乙烷、1,6-貳馬來醯亞胺基己烷、N-(4-胺基苯基)馬來醯亞胺、N-乙基-N-(4-吡啶甲基)阿托醯胺、N-[4-(2-苯并咪唑基)苯基]馬來醯亞胺、(1R,2R)-2-(蒽-2,3-二羧醯亞胺基)環己烷甲酸、(1S,2S)-2-(蒽-2,3-二羧醯亞胺基)環己烷甲酸、(1R,2R)-2-(萘-2,3-二羧醯亞胺基)環己烷甲酸、(1S,2S)-2-(萘-2,3-二羧醯亞胺基)環己烷甲酸、6,7-亞甲二氧基-4-甲基-3-馬來醯亞胺基香豆素、2,4,7,8,9-五-O-乙醯基-N-神經胺酸甲酯、GlcNPhth[346Ac]β(1-3)Gal[246Bn]-β-MP、Gal[2346Ac]β(1-3)GlcNPhth[46Bzd]-β-MP、4-甲氧苯基3-O-苄基-2-去氧-2-酞醯亞胺基-β-D-葡萄哌喃糖苷、4-甲氧苯基3,6-二-O-苄基-2-去氧-2-酞醯亞胺基-β-D-葡萄哌喃糖苷、4-甲氧苯基4-O-乙醯基-3,6-二-O-苄基-2-去氧-2-酞醯亞胺基-β-D-葡萄哌喃糖苷、1,3-二甲基-2-咪唑啶酮、1-(羥甲基)5,5-二甲基乙內醯脲、N-(環己硫基)酞醯亞胺基、1,3-二甲基-3,4,5,6-四氫-2(1H)-嘧啶酮、N-羥基酞醯亞胺、四甲脲、N-氯酞醯亞胺、3-(4-氯苯基)-1,1-二甲基脲、3-(3,4-二氯苯基)-1,1-二甲基脲、3-甲基-2- 唑啶酮、1-哌羧酸乙酯、N-苄氧羰基氧基琥珀醯亞胺、1,3-二甲基-5-吡唑啉酮、1,1-二甲基脲、1,1,3,3-四乙基脲、1-乙氧羰基-4-哌啶酮、1-烯丙基乙內醯脲、1-苄基-5-乙氧基乙內醯脲、1-甲基乙內醯脲、N-(第三丁氧羰基)-L-脯胺酸、N-苄氧羰基-L-脯胺酸、N-[(9H-茀-9-基甲氧基)羰基]-L-脯胺酸、1-丁基乙內醯脲、順-1,3-二苄基-2-側氧基-4,5-咪唑啶二羧酸、N-(2-氯苄氧基羰氧基)琥珀醯亞胺、1-十二烷基乙內醯脲、4-氯-1-哌啶羧酸乙酯、1,1-二乙基脲、N,N,O-三乙醯羥胺、4-羥基-1-哌啶羧酸乙酯、1-苄基乙內醯脲、4-胺基-1-哌啶羧酸乙酯、3-甲磺醯基-2-側氧基-1-咪唑啶羰基氯、碳酸2-溴苄基琥珀醯亞胺基酯、N-溴基酞醯亞胺、碳酸9-茀基甲基N-琥珀醯亞胺基酯、1,3,4,6-肆(甲氧甲基)乙炔脲、2-側氧基-1-咪唑啶羰基氯、卡丹(captan)、1-十六基乙內醯脲、1,1,3,3-四丁脲、N-胺基酞醯亞胺、N,N’-二甲氧基-N,N’-二甲基草醯胺、溴化新斯的明(neostigmine bromide)、1-苄氧羰基哌、N-烯丙氧基酞醯亞胺、1-(第三丁氧羰基)-4-哌啶酮、1,1-二甲基-3-[3-(三氟甲基)苯基]脲、檸檬酸乙胺(diethylcarbamazine citrate)、1-(第三丁氧羰基)-4-羥基哌啶、1,5,5-三甲基乙內醯脲、甲硫酸新斯的明、碳酸二(N-琥珀醯亞胺基)酯、N-甲氧基-N-甲基乙醯胺、1,1’-(偶氮基二羰基)二哌啶、(-)-噻唑啶-3,4-二羧酸3-乙酯、N-(第三丁氧羰基)-L-脯胺醇、乙氧羰基異硫氰酸酯、2-氯-N-甲氧基-N-甲基乙醯胺、N-(1,2,2,2-四氯乙氧羰氧基)琥珀醯亞胺、N-(苯硫基)酞醯亞胺、溴化吡斯的明(pyridostigmine bromide)、N-苄氧羰基-D-脯胺酸、N-(第三丁氧羰基)-D-脯胺酸、N-(第三丁氧羰基)-L-4-羥基脯胺酸、2-(5-降冰片烯-2,3-二羧醯亞胺基)-1,1,3,3-四氟硼酸四甲基脲鎓四氟硼酸鹽、1-(第三丁氧羰基)哌、(3S)-2-CBZ-1,2,3,4-四氫異喹啉-3-羧酸、N-苄氧羰基-L-脯胺酸第三丁酯、N-羥基-4-硝基酞醯亞胺、N-甲氧基二乙醯胺、(S)-(-)-3-第三丁氧羰基-4-甲氧羰基-2,2-二甲基-1,3-唑啶、N-[(9H-茀-9-基甲氧)羰基]-D-脯胺酸、N-(第三丁氧羰基)-O-苄基-L-絲胺酸N-琥珀醯亞胺基酯、1-(第三丁氧羰基)六氫異菸鹼酸、N,N,N’,N’-四甲基-O-(N-琥珀醯亞胺基)脲鎓四氟硼酸鹽、4-胺基-1-第三丁氧羰基哌啶、碳酸第三丁基酞醯亞胺、3-(N-第三丁氧羰基-N-甲胺基)吡咯啶、N-[2-(三甲基矽烷基)乙氧羰氧基]琥珀醯亞胺、N-(第三丁氧羰基)-D-脯胺醇、1-(第三丁氧羰基)-4-哌啶甲醇、(S)-1-(第三丁氧羰基)-3-吡咯啶醇、(R)-1-(第三丁氧羰基)-3-吡咯啶醇、(R)-(-)-4-苄基-3-丙醯基-2-唑啶酮、1,1’-偶氮貳(N,N-二甲基甲醯胺)、參(苄氧羰基)-L-精胺酸、(N-甲氧基-N-甲基胺甲醯基甲基)膦酸二乙酯、(3R)-(+)-1-(第三丁氧羰基)-3-胺基吡咯啶、(3S)-(-)-1-(第三丁氧羰基)-3-胺基吡咯啶、(N-甲氧基-N-甲基胺甲醯基甲基)膦酸二苯酯、N-胺基琥珀醯亞胺鹽酸鹽、4-硝基苯基乙酸N-琥珀醯亞胺基酯、1-(第三丁氧羰基)-3-羥基四氫吖唉、(S)-(-)-3-(第三丁氧羰基)-4-甲醯基-2,2-二甲基-1,3-唑啶、3,3’-二硫代二丙酸二(N-琥珀醯亞胺基)酯、S-乙醯基硫代羥乙酸N-琥珀醯亞胺基酯、N-(二乙基胺甲醯基)-N-甲氧基甲醯胺、6-(2,4-二硝基苯胺基)己酸N-琥珀醯亞胺基酯、(2S,4R)-1-(第三丁氧羰基)-4-氟-2-吡咯啶甲酸、(2S,4S)-1-(第三丁氧羰基)-4-氟-2-吡咯啶甲酸、D-生物素N-琥珀醯亞胺基酯、4-[3,5-二甲基-4-(4-硝基苄氧基)苯基]-4-側氧基丁酸琥珀醯亞胺基酯、(S)-1-(第三丁氧羰基)-2-四氫吖唉甲醇、(R)-1-(第三丁氧羰基)-2-四氫吖唉甲醇、N-第三丁氧羰基-N-[3-(第三丁氧羰基胺基)丙基]甘胺酸、伊利替康鹽酸鹽(irinotecan HCl)、6-[[7-(N,N-二甲基胺基磺醯基)-2,1,3-苯并二唑-4-基]胺基]己酸琥珀醯亞胺基酯、(2R)-6-(四氫-2H-哌喃-2-基氧基)-2,5,7,8-四甲基色滿-2-羧酸琥珀醯亞胺基酯、苯基N-苄基-2-胺基-4,6-O-亞苄基-2-N,3-O-羰基-2-去氧-1-硫代-β-D-葡萄哌喃糖苷。當研磨用組成物含有具通式(2)所示構造的化合物時，研磨用組成物中該化合物之含量以約0.05莫耳/公升為佳。胺、1-乙醯基-4-(4-羥苯基)哌、N,N-二乙基氯乙醯胺、N-(2-溴乙基)酞醯亞胺、1-乙基-2,3-二側氧基哌、1-乙基-2-吡咯啶酮、二唑啶基脲、N-(3-溴丙基)酞醯亞胺、貳(N,N-二甲基乙醯胺)三氫溴酸鹽、N-甲基馬來醯亞胺、3’,6’-貳(二乙基胺基)-2-(4-硝基苯基)螺[異吲哚-1,9’-二苯并哌喃]-3-酮、青黴素G鉀鹽、N,N-二乙基丙醯胺、N-十二醯基肌胺酸鈉水合物、氯滅酸朗(Chlormezanone)、N-甲基-4-硝基酞醯亞胺、6-胺基青黴酸、酞醯亞胺基丙酮、N-乙醯基酞醯亞胺、3-苄基若丹明、3-乙基若丹明、N,N,N’,N’-四乙醯基伸乙二胺、3-烯丙基若丹明、N-環己基馬來醯亞胺、N-(2,4,6-三氯苯基)馬來醯亞胺、頭孢菌素(cephalexin)、N-甲基酞醯亞胺、酞醯亞胺DBU、2-酞醯亞胺基乙醛二乙醇縮醛、二氯滅(dichlormid)、N-丁基酞醯亞胺、安比西林、4-乙基-2,3-二側氧基-1-哌羰基氯、若丹明-3-乙酸、N-乙基馬來醯亞胺、N-苄基酞醯亞胺、3,4,5,6-四氟-N-甲基酞醯亞胺、頭孢唑林鈉(Cefazolin Sodium)、1-乙醯基-4-哌啶酮、N-乙基琥珀醯亞胺(N-Ethylsuccinimide)、阿莫西林(amoxicillin)、N-(溴甲基)酞醯亞胺、4-硝基-N-苯基酞醯亞胺、1-乙醯基哌啶、1-乙醯基哌、7-胺基去乙醯氧基頭孢烷酸、1-(3-羥基丙基)-2-吡咯啶酮、4-胺基-N-甲基酞醯亞胺、N,N,N’,N’-四甲基丙二醯胺、1-乙醯基-2-吡咯啶酮、N-(4-溴丁基)酞醯亞胺、1-丁基-2-吡咯啶酮、三氯乙醯異氰酸、頭孢噻肟鈉(cefotaxime sodium)、頭孢曲松二鈉(cephtriaxone disodium)、N,N-二乙基胺甲醯甲基膦酸二丁酯、酞醯基-DL-麩胺酸、2-丁基-1,3-二氮雜螺[4.4]壬-1-烯-4-酮鹽酸鹽、頭孢他啶(ceftazidime)、N,N’,N”,N’’’-四乙醯基乙炔脲、苯唑青黴素鈉(oxacillin sodium)、1-乙醯基-2-咪唑啶酮、2-側氧基-1-吡咯啶乙酸甲酯、2-氰基-N,N-二甲基乙醯胺、鹽酸洛哌丁胺(loperamide HCl)、N-苄基馬來醯亞胺、若丹明-3-丙酸、N-酞醯基-DL-麩胺酸、(+)-N,N,N’,N’-四甲基-L-酒石二醯胺、N-(4-氯苯基)酞醯亞胺、(酞醯亞胺甲基)膦酸二乙酯、(-)-N,N,N’,N’-四甲基-D-酒石二醯胺、7-胺基頭孢烷酸、N-(4-溴苯基)酞醯亞胺、N,N-二甲基甲基丙烯醯胺、1-苄基-5-苯巴比妥酸、胡椒鹼(piperine)、托品醯胺(tropicamide)、卡托普定(captopril)、N,N’-二乙醯基甘胺酸、N-乙烯基肽醯亞胺、肽醯亞胺丙二酸二乙酯、(R)-N-縮水甘油基酞醯亞胺、(S)-N-縮水甘油基酞醯亞胺、N-酞醯基-L-苯基丙胺酸、酞醯基-DL-丙胺酸、1,3,4,6-四-O-乙醯基-2-去氧-2-酞醯亞胺-β-D-乙二醇吡喃糖、N,N,N’,N’-四乙基丙二醯胺、N,N,N’,N’-四丙基丙二醯胺、N,N,N’,N’-四丁基丙二醯胺、N,N,N’,N’-四戊基丙二醯胺、N-氯甲基酞醯亞胺、氯唑西林鈉(cloxacillin sodium)、N-(4-硝基苯)馬來醯亞胺、N,N’-1,4-苯二馬來醯亞胺、1,5-二甲基-2-哌啶酮、L-丙胺醯基-L-脯胺酸、N-癸醯基肌胺酸鈉、N-酞醯基-L-麩胺酸、1-[(2S)-3-(乙醯硫基)-2-甲基丙醯基]-L-脯胺酸、N,N-二乙基胺甲醯基亞甲基膦酸二己酯、(S)-(+)-2-羥基-4-酞醯亞胺基丁酸、2-溴-2-氰基-N,N-二甲基乙醯胺、1-乙醯基吡咯啶、N-甲基貳(三氟乙醯胺)、青黴素G鈉鹽、格列喹酮(gliquidone)、1,3-二甲基-2-硫代乙內醯脲、3-(N-乙醯基-N-甲基胺基)吡咯啶、賴諾普利(lisinopril)、反-1-甲基-4-羧基-5-(3-吡啶基)-2-吡咯啶酮、N-(3-丁烯-1-基)酞醯亞胺、(R)-(-)-4-苄基-3-丙醯基-2-唑啶酮、(S)-(+)-4-苄基-3-丙醯基-2-唑啶酮、NAM、哌拉西林鈉(piperacillin sodium)、N-溴甲基-2,3-二氯馬來醯亞胺、4-甲氧苯基-3,4,6-三-O-乙醯基-2-去氧-2-酞醯亞胺-β-D-葡萄哌喃糖苷、1,3-二環己基巴比妥酸、甘胺醯基肌胺酸、(S)-(+)-4-異丙基-3-丙醯基-2-唑啶酮、(R)-(-)-4-異丙基-3-丙醯基-2-唑啶酮、酮康唑(ketoconazole)、N-氯甲基-4-硝基酞醯亞胺、3-(N-乙醯基-N-乙基胺基)吡咯啶、4,4’,4”-参(4,5-二氯酞醯亞胺)三苯甲基溴、4-甲氧苯基4,6-O-亞苄基-2-去氧-2-酞醯亞胺-β-D-葡萄哌喃糖苷、4-甲氧苯基3-O-烯丙基-4,6-O-亞苄基-2-去氧-2-酞醯亞胺-β-D-葡萄哌喃糖苷、甲基3,4,6-三-O-乙醯基-2-去氧-2-酞醯亞胺-1-硫代-β-D-葡萄哌喃糖苷、4-甲氧苯基3-O-苄基-4,6-O-亞苄基-2-去氧-2-酞醯亞胺-β-D-葡萄哌喃糖苷、甘胺醯基-L-脯胺酸、酒石酸麥角胺、3-丙烯醯基-2-唑啶酮、N-(8-羥基辛基)酞醯亞胺、(R)-1-乙醯基-3-吡咯啶醇、甲基磺酸二氫麥角胺、3-馬來醯亞胺基丙酸、N-(1-芘基)馬來醯亞胺、3-馬來醯亞胺基苯甲酸N-琥珀醯亞胺基酯、酒石酸二氫麥角胺、4-馬來醯亞胺基丁酸N-琥珀醯亞胺基、3-馬來醯亞胺基丙酸N-琥珀醯亞胺基酯、6-馬來醯亞胺基己酸N-琥珀醯亞
具有通式(2)所示構造的化合物特別適合作為研磨用組成物中所含之含氮化合物，此係因為此等化合物大致為中性。在所使用之含氮化合物大致為中性之情況，即使不加大量的酸也可輕易將研磨用組成物之pH調整至7以下。相對於此，在所使用之含氮化合物為強鹼性之情況，為了將研磨用組成物之pH調整至7以下，必須視情況加大量的酸。大量的酸的使用會導致研磨用組成物中磨粒之凝集。
具有通式(1)所示構造的化合物中，胺基酸型兩性界面活性劑及胺型非離子界面活性劑也特別適合用作研磨用組成物中所含的含氮化合物。就胺基酸型兩性界面活性劑的具體例而言，可列舉烷胺基單丙酸、烷胺基二丙酸、烷基醯胺基肌胺酸。就胺型非離子界面活性劑的具體例而言，可列舉聚氧伸乙基烷基胺基醚、烷基二乙醇胺(alkyldiethanolamine)、聚氧伸乙基烷基胺、嵌段加成有聚氧伸丙基及和聚氧伸乙基的烷基胺、及N,N’,N’-参(2-羥乙基)-N-烷基-1,3-二胺基丙烷。在研磨用組成物含有胺基酸型兩性界面活性劑之情況，其研磨用組成物中該胺基酸型兩性界面活性劑之含量以0.002～0.20g/L為較佳。在研磨用組成物含有胺型非離子界面活性劑之情況，研磨用組成物中該胺型非離子界面活性劑之含量以0.002～1g/L為較佳。
又，除了具有前述通式(1)所示構造的化合物以外，羧基甜菜鹼型兩性界面活性劑、磺酸基甜菜鹼型兩性界面活性劑、咪唑啉型兩性界面活性劑、胺氧化物型兩性界面活性劑也適合用作研磨用組成物中所含的含氮化合物。就羧基甜菜鹼型兩性界面活性劑之具體例而言，可列舉烷基二甲基胺基乙酸甜菜鹼(別名：烷基甜菜鹼)、烷基醯胺基丙基二甲基胺基乙酸甜菜鹼(別名：烷基醯胺基丙基甜菜鹼)。磺酸基甜菜鹼型兩性界面活性劑之具體例可為，例如，烷基羥基磺酸基甜菜鹼。咪唑啉型兩性界面活性劑之具體例可為，例如，2-烷基-N-羧基甲基-N-羥基乙基咪唑啉鎓甜菜鹼、2-高級脂肪酸-N’-羧基甲基-N’-羥基乙基乙二胺。胺氧化物型兩性界面活性劑之具體例可為，例如，烷基二甲基胺氧化物、高級脂肪醯胺丙基二甲基胺氧化物。若研磨用組成物含有此等兩性界面活性劑之任一種，則研磨用組成物中此等兩性界面活性劑之含量以0.002至0.20g/L為較佳。
對於研磨用組成物中所含之前述研磨粒種類無特殊限定，可使用例如二氧化矽、氧化鋁、氧化鋯、氧化鈰。然而，在研磨矽材料之用途中使用研磨用組成物之情況，較適合使用者為二氧化矽，其中以膠體矽石或煙燻矽石(fumed silica)為特佳。使用二氧化矽，尤其膠體矽石或煙燻矽石做為研磨粒時，研磨用組成物所產生之矽材料研磨速度尤其會大幅度地提高。
研磨用組成物中所含之研磨粒之平均二次粒徑以5nm以上為較佳，而以10nm以上為更佳。隨著平均二次粒徑增大，研磨用組成物所產生之矽材料之研磨速度提高。若平均二次粒徑為5nm以上，或進一步而言為10nm以上，則易使研磨用組成物所產生之矽材料之研磨速度提高至實用上特別適合之程度。
又，研磨用組成物中所含之研磨粒之平均二次粒徑以250nm以下為較佳，而以200nm以下為更佳。隨著平均二次粒徑減小，研磨用組成物中之研磨粒之分散性提高。若平均二次粒徑為250nm以下，或進一步而言為200nm以下，則易使研磨用組成物中研磨粒之分散性提高至實用上特別適合之程度。
研磨用組成物中之研磨粒含量以1質量%以上為較佳，而以3質量%以上為更佳。隨著研磨粒之含量增多，研磨用組成物所產生之矽材料之研磨速度提高。若研磨用組成物中之研磨粒之含量為1質量%以上，或進一步而言為3質量%以上，則易使研磨用組成物所產生之矽材料之研磨速度提高至實用上特別適合之程度。
又，研磨用組成物中之研磨粒之含量以25質量%以下為較佳，而以20質量%以下為更佳。隨著研磨粒之含量減少，研磨用組成物中之研磨粒之分散性提高。若研磨用組成物中之研磨粒之含量為25質量%以下，或進一步而言為20質量%以下，則易使研磨用組成物中研磨粒之分散性提高至實用上特別適合之程度。
對於研磨用組成物中視需要含有之前述pH調整劑無特別限定，只要能將研磨用組成物之pH調到1至7間之期望值，可使用適宜量之任何酸或鹼。同樣地，對於研磨用組成物中視需要含有之前述pH緩衝劑亦無特別限定，只要能得到期望之緩衝效果，可使用適宜量之任何鹽。然而，宜避免使用例如硝酸或硝酸鹽等具有氧化作用之物質，亦即氧化劑，作為pH調整劑或pH緩衝劑。不僅是硝酸及硝酸鹽，當過氧化氫等過氧化物、碘酸鹽、過碘酸鹽、次氯酸鹽、亞氯酸鹽、氯酸鹽、過氯酸鹽、過硫酸鹽、重鉻酸鹽、過錳酸鹽、臭氧水、二價銀鹽及三價鐵鹽等氧化劑含於研磨用組成物中時，由於在研磨中之矽材料表面會形成氧化膜，因此恐怕會使研磨用組成物所產生之矽材料之研磨速度降低。可適合使用做為pH調整劑之酸可為，例如，硫酸、鹽酸、磷酸等無機酸；或乙酸、羥乙酸、蘋果酸、酒石酸、檸檬酸、乳酸、α-丙胺酸、甘胺酸等有機酸。又，適合用作pH調整劑之鹼可為，例如，氫氧化銨、氫氧化四甲基銨、氫氧化鈉、氫氧化鉀等。
若依照本實施態樣，可得到以下之有利點。
藉由使用本實施態樣之研磨用組成物，可用高除去速度研磨如單體矽及矽化合物之矽材料。因此，本實施態樣之研磨用組成物適合使用於研磨矽材料之用途，具體而言，不僅單獨研磨單體矽或矽化合物之用途，亦可適合使用於同時研磨單體矽及矽化合物之用途。藉由使用本實施態樣之研磨用組成物可實現以高除去速度研磨矽材料之理由詳情仍不清楚，不過推測係由於研磨用組成物中所含之含氮化合物之氮原子存在非共有電子對而具有高電子給予性，因此即使在中性至酸性之區域中，亦可發揮對矽材料之高反應性。研判該非共有電子對之高電子給予性，在含氮化合物具有前述通式(1)所示之構造時特別強。
[第二實施態樣]
以下，說明本發明之第二實施態樣。
‧第二實施態樣之研磨用組成物可藉由將水溶性高分子及研磨粒，與視需要添加之pH調整劑及pH緩衝劑一起在水中混合，將pH調到1至8之範圍內而製造。因此，該研磨用組成物含有水溶性高分子、研磨粒及水，並視需要進一步含有pH調整劑及pH緩衝劑。亦即，第二實施態樣之研磨用組成物與第一實施態樣之研磨用組成物不同之點只在於前者含有水溶性高分子代替含氮化合物，以及pH非為1至7而在1至8之範圍。
研磨用組成物中所含有之前述水溶性高分子，可為，例如，海藻酸、果酸、羧甲基纖維素、澱粉、瓊脂、卡德蘭膠(cardlan)、普魯蘭多糖(pullulan)等多糖；聚天冬胺酸、聚麩胺酸、聚離胺酸、聚蘋果酸、聚甲基丙烯酸、聚甲基丙烯酸銨鹽、聚甲基丙烯酸鈉鹽、聚馬來酸、聚衣康酸、聚富馬酸、聚(對苯乙烯羧酸)、聚丙烯酸、聚丙烯醯胺、胺基聚丙烯醯胺、聚丙烯酸甲酯、聚丙烯酸乙酯、聚丙烯酸銨鹽、聚丙烯酸鈉鹽、聚醯胺酸、聚醯胺酸銨鹽、聚醯胺酸鈉鹽、聚乙醛酸等聚羧酸，聚羧醯胺、聚羧酸酯或聚羧酸鹽；聚苯乙烯磺酸等聚磺酸；聚乙烯醇、聚乙烯基吡啶、聚乙烯基吡咯啶酮、聚丙烯醛等乙烯基聚合物。然而，為防止研磨之矽材料遭受鹼金屬、鹼土金屬或鹵化物污染，以分子中不含鹼金屬、鹼土金屬或鹵素元素之水溶性高分子為較佳。研磨用組成物中之水溶性高分子之含量以0.1至5.0g/L為較佳。
若依照第二實施態樣可得到以下之有利點。
‧藉由使用第二實施態樣之研磨用組成物，可將單體矽以高除去速度研磨。因此，第二實施態樣之研磨用組成物，可適合使用於研磨單體矽之用途。藉由使用第二實施態樣之研磨用組成物可實現以高除去速度研磨單體矽之理由詳情仍不清楚，不過推測係藉由研磨用組成物中所含有之水溶性高分子將單體矽之表面改質而導致。
‧與第一實施態樣之研磨用組成物之情況同樣地，藉由第二實施態樣之研磨用組成物進行之單體矽之研磨速度恐怕亦隨氧化劑之存在而降低。此點，由於第二實施態樣之研磨用組成物未含有氧化劑，可避免因氧化劑所造成之矽材料之研磨速度降低。
前述第一及第二實施態樣亦可如下述變更。
‧第一實施態樣之研磨用組成物亦可含有二種以上之含氮化合物。
‧第二實施態樣之研磨用組成物亦可含有二種以上之水溶性高分子。
‧第一及第二實施態樣之研磨用組成物亦可分別含有二種以上之研磨粒。
‧第一實施態樣之研磨用組成物亦可含有含氮化合物、研磨粒及水以外之成分，例如，可視需要添加螯合劑或水溶性高分子、界面活性劑、防腐劑、防黴劑、防銹劑等添加劑。
‧第二實施態樣之研磨用組成物亦可含有水溶性高分子、研磨粒及水以外之成分，例如，可視需要添加螯合劑或界面活性劑、防腐劑、防黴劑、防銹劑等添加劑。
‧第一及第二實施態樣之研磨用組成物亦可分別藉由將研磨用組成物之原液用水稀釋而調製。
繼而，舉出實施例及比較例更具體地說明本發明。
實施例1至21及參考例1至5中，係將含氮化合物及研磨粒，並視需要與pH調整劑一起於水中混合，調製研磨用組成物。比較例1至5中，係將研磨粒，並視需要與pH調整劑一起於水中混合，調整研磨用組成物。各例之研磨用組成物中含氮化合物之詳細情形及測定各例之研磨用組成物之pH之結果如表1所示。再者，各例中所使用之研磨粒，為平均二次粒徑30nm之膠體矽，研磨用組成物中之膠體矽之含量皆為5質量%。又，各例中所使用之pH調整劑為乙酸或氫氧化鉀。
使用各例之研磨用組成物，將直徑200mm之附有多晶矽膜之基板表面以表2所示之條件進行研磨。將使用大日本Screen製造股份公司之光繞射式膜厚測定裝置「Lambda Ace VM-2030」所測定之研磨前後各基板厚度差除以研磨時間，求取多晶矽研磨速度。當實施例4之研磨用組成物產生之多晶矽研磨速度當做100時，以相對值表示之各例之研磨用組成物產生之多晶矽研磨速度示於表1之「多晶矽研磨速度」欄。
使用一部分之各例之研磨用組成物，將直徑200mm之附有氮化矽膜之基板表面以表2所示之條件進行研磨。將使用光繞射式膜厚測定裝置「Lambda Ace VM-2030」測定之研磨前後各基板厚度差除以研磨時間，求取氮化矽研磨速度。當將實施例4之研磨用組成物所產生之氮化矽研磨速度當做100時，將以相對值表示之各例之研磨用組成物所產生之氮化矽研磨速度示於表1之「氮化矽研磨速度」欄。
從表1中可明顯地見到中性至酸性之區域中多晶矽研磨速度藉由將含氮化合物添加於研磨用組成物中而增大。該中性至酸性之區域中多晶矽研磨速度之增大，在使用具有前述通式(1)所示構造之化合物做為含氮化合物時特別顯著(參照實施例2至11)。此種藉由含氮化合物之添加而使研磨速度增大之傾向，不僅在多晶矽之研磨時，在研磨單晶矽及非晶矽(amorphous silicon)時亦同樣地可見到。又，從表1中亦可明顯地見到氮化矽研磨速度在中性至酸性之區域中變高，而在pH 5附近呈現最大尖峰，該氮化矽研磨速度亦隨含氮化合物之添加而增大。從以上可顯示本發明之研磨用組成物不僅適用於研磨如多晶矽之單體矽之用途，在將如氮化矽等矽化合物與單體矽同時研磨之用途中亦適用。
在實施例101至123中，係於研磨粒中添加pH調整劑及水，再添加兩性界面活性劑，調製成研磨用組成物。在實施例201至205中，係於研磨粒中添加pH調整劑及水，再添加含氮界面活性劑，調製成研磨用組成物。在實施例301至337中，係在研磨粒中添加pH調整劑及水，再添加水溶性高分子，調製成研磨用組成物。在比較例101至109中，係在研磨粒中添加pH調整劑及水，調製成研磨用組成物。各例之研磨用組成物中之兩性界面活性劑、含氮界面活性劑、水溶性高分子及研磨粒之詳情及測定各例之研磨用組成物之pH之結果如表3至表6所示。再者，各例中所使用之pH調整劑為乙酸。
表3至表6中，A1a表示平均二次粒徑70nm之膠體矽石、A1b表示平均二次粒徑30nm之膠體矽石、A2表示平均二次粒徑150nm之煙燻矽石、B1表示2-油醯基-N-羧甲基-N-羥乙基咪唑鎓甜菜鹼、B2表示烷基(C12
~C14
)二甲基胺基乙酸甜菜鹼、B3表示烷基(C12
~C14
)醯胺基丙基二甲基胺基乙酸甜菜鹼、B4表示烷基(C12
~C14
)二甲基胺基氧化物、B5表示月桂基羥基磺酸基甜菜鹼、B6表示烷基(C12
~C14
)醯胺基肌胺酸、B7表示月桂基胺基丙酸、C1表示POE(2)月桂基胺基醚、C2表示POE(10)月桂基胺基醚、C3表示POE(5)油醯基胺基醚、D1a表示平均分子量3000之聚丙烯酸、D1b表示平均分子量5500之聚丙烯酸、D2表示平均分子量200000之聚丙烯醯胺、D3表示平均分子量80000之羧基甲基纖維素、D4表示和光純藥工業股份有限公司製之澱粉(生化學用試藥)、D5表示林原生物化學研究所股份有限公司製之普魯蘭多糖(pullulan)(試藥)、D6a表示平均分子量8800之聚乙烯醇、D6b表示平均分子量22026之聚乙烯醇、D6c表示平均分子量66078之聚乙烯醇、D6d表示平均分子量105725之聚乙烯醇、D6e表示平均分子量146000之聚乙烯醇、D7a表示平均分子量15000之聚乙烯基吡咯啶酮、D7b表示平均分子量29000之聚乙烯基吡咯啶酮、D7c表示平均分子量30000之聚乙烯基吡咯啶酮、D7d表示平均分子量40000之聚乙烯基吡咯啶酮、D7e表示平均分子量360000之聚乙烯基吡咯啶酮、D8表示平均分子量60000之聚乙烯基吡啶、D9表示平均分子量18320之聚苯乙烯磺酸。
表3至表6之「多晶矽研磨速度」欄中，表示使用各例之研磨用組成物，將附有直徑200mm之多晶矽膜之基板表面以表7所示之條件研磨時之研磨速度。研磨速度之值，係將使用大日本Screen製造股份有限公司之光繞射式膜厚測定裝置「Lambda Ace VM-2030」測定之研磨前後各基板厚度差除以研磨時間而求得。
從表3至表6中可明顯地見到藉由添加兩性界面活性劑、含氮界面活性劑或水溶性高分子，研磨用組成物產生之多晶矽之研磨速度有增大之傾向。此種傾向不僅在多晶矽之研磨時可見到，在研磨單晶矽及非晶矽(amorphous silicon)時亦同樣地可見到。
Claims (14)
- 一種研磨用組成物，其特徵為含有含氮化合物及研磨粒，不含氧化劑，其中該含氮化合物具有通式：R1-N(-R2)-R3所示之構造，其中R1、R2及R3分別表示烷基、或特性基附加於烷基而成之基團，R1至R3中之二個可構成雜環之一部分，或R1至R3中之二個相連，並與剩餘之一個共同構成雜環之一部分，前述研磨粒係平均二次粒徑為5~250nm之膠體矽石，且pH為1至7，用於研磨多晶矽、單晶矽或非晶矽之用途。
- 如申請專利範圍第1項之研磨用組成物，其係用於同時研磨多晶矽、單晶矽或非晶矽以及一矽化合物之用途。
- 如申請專利範圍第1項之研磨用組成物，其中該含氮化合物具有通式：R1-N(-R2)-C(=O)-R4所示之構造(其中，R1、R2及R4分別表示烷基、或特性基附加於烷基而成之基團，R1或R2可與R4共同構成雜環之一部分)。
- 如申請專利範圍第3項之研磨用組成物，其中該含氮化合物為1-甲基-2-吡咯啶酮、1-乙基-2-吡咯啶酮、N,N-二甲基乙醯胺、或N,N-二乙基乙醯胺。
- 如申請專利範圍第1項之研磨用組成物，其中該含氮化合物為胺基酸型兩性界面活性劑。
- 如申請專利範圍第1項之研磨用組成物，其中該含氮化合物為胺型非離子界面活性劑。
- 如申請專利範圍第1項之研磨用組成物，其中該含氮化合物為羧基甜菜鹼型兩性界面活性劑、磺酸基甜菜鹼型兩性界面活性劑、咪唑啉型兩性界面活性劑、及胺氧化物型兩性界面活性劑。
- 如申請專利範圍第1項之研磨用組成物，其中該含氮化合物選自：1-甲基-2-吡咯啶酮、1-乙基-2-吡咯啶酮、N,N-二乙基乙醯胺、甲基哌啶、吡啶、亞胺基二乙酸、乙內醯脲、琥珀醯亞胺、N-羥基琥珀醯亞胺、哌啶、哌咯啶、甘胺酸、丙胺酸、纈草胺酸以及N-甲基甘胺酸所組成之群。
- 如申請專利範圍第1項之研磨用組成物，其中該含氮化合物選自：2-油醯基-N-羧甲基-N-羥乙基咪唑鎓甜菜鹼、烷基二甲基胺基乙酸甜菜鹼、烷基醯胺基丙基二甲基胺基乙酸甜菜鹼、烷基二甲基胺氧化物、月桂基羥基磺酸基甜菜鹼、烷基醯胺基肌胺酸以及月桂基胺基丙酸所組成之群。
- 如申請專利範圍第1項之研磨用組成物，其中該含氮化合物為聚氧伸乙基烷基胺基醚或聚氧伸乙基油醯基胺基醚。
- 一種研磨用組成物，其特徵為含有水溶性高分子及研磨粒，不含氧化劑，其中該水溶性高分子為多糖、聚羧酸、聚羧醯胺、聚羧酸酯、聚羧酸鹽、聚磺酸及乙烯系聚合物之任一種，前述研磨粒係平均二次粒徑為5~250nm之膠體矽石，且pH為1至8，用於研磨多晶矽、單晶矽或非晶矽之用途。
- 如申請專利範圍第11項之研磨用組成物，其中該水溶性高分子為聚丙烯酸、聚丙烯醯胺、羧甲基纖維素、澱粉、普魯蘭多糖(pullulan)、聚乙烯醇、聚乙烯基吡咯啶酮、聚乙烯基吡啶、聚苯乙烯磺酸。
- 一種研磨方法，其特徵為使用申請專利範圍第1至12項中任一項之研磨用組成物研磨多晶矽、單晶矽或非晶矽。
- 如申請專利範圍第13項之研磨方法，係同時研磨多晶矽、單晶矽或非晶矽以及一矽化合物。
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| CN114591686B (zh) * | 2022-03-11 | 2023-05-26 | 万华化学集团电子材料有限公司 | 一种铜阻挡层化学机械抛光液及其应用 |
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| TWI826834B (zh) * | 2017-01-11 | 2023-12-21 | 日商福吉米股份有限公司 | 研磨用組合物 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140146225A (ko) | 2014-12-24 |
| KR101564676B1 (ko) | 2015-11-02 |
| JPWO2009096495A1 (ja) | 2011-05-26 |
| CN103131330B (zh) | 2015-09-23 |
| JP5695708B2 (ja) | 2015-04-08 |
| KR20100121469A (ko) | 2010-11-17 |
| WO2009096495A1 (ja) | 2009-08-06 |
| US20100301014A1 (en) | 2010-12-02 |
| SG188090A1 (en) | 2013-03-28 |
| EP2237311A4 (en) | 2011-11-30 |
| CN103131330A (zh) | 2013-06-05 |
| JP2013251561A (ja) | 2013-12-12 |
| CN102084465A (zh) | 2011-06-01 |
| SG10201605686XA (en) | 2016-08-30 |
| US10144849B2 (en) | 2018-12-04 |
| TW200946660A (en) | 2009-11-16 |
| KR101564673B1 (ko) | 2015-10-30 |
| EP2237311A1 (en) | 2010-10-06 |
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